CN103378241A - Novel GaN-based light emitting diode device and producing method thereof - Google Patents

Novel GaN-based light emitting diode device and producing method thereof Download PDF

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CN103378241A
CN103378241A CN2012101145352A CN201210114535A CN103378241A CN 103378241 A CN103378241 A CN 103378241A CN 2012101145352 A CN2012101145352 A CN 2012101145352A CN 201210114535 A CN201210114535 A CN 201210114535A CN 103378241 A CN103378241 A CN 103378241A
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emitting diode
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郝锐
马学进
吴质朴
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Jiangmen Orient Opto Electronics Co ltd
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Jiangmen Orient Opto Electronics Co ltd
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Abstract

The invention relates to a novel GaN-based light-emitting diode device capable of improving light emission efficiency and a producing method thereof. The light emitting diode device includes a substrate, a first semiconductor carrier injection layer, a multiple quantum well structure, a last quantum barrier (LQB) of the multiple quantum well structure and a second semiconductor carrier injection layer which are sequentially stacked. The last quantum barrier (LQB) of the multiple quantum well structure is provided with a multi-layer or multi-component composite structure. The last quantum barrier is provided with a single- or multi-layer epitaxial structure of GaN-type and alloy material thereof. The method comprises the steps of alternatively growing a GaN layer and an InGaN layer to form quantum wells of 3 cycles to 15 cycles by use of an MOCVD method after production of an N-type gallium nitride semiconductor layer; and continuing the growth of an epitaxial layer of the last quantum barrier of the multi-layer or multi-component composite structure after the growth of the last quantum well. According to the invention, the produced light emitting diode with a composite LQB structure can effectively improve light emission efficiency of diodes and reduce forward voltage. Further, the producing method is simple and the process is easy to control. The novel GaN-based light-emitting diode device is suitable for mass production with no special requirement on growth equipment and process conditions.

Description

A kind of novel GaN based LED device and preparation method thereof
Technical field:
The present invention relates to the light-emitting diode field, particularly a kind of novel GaN based LED device and preparation method thereof.
Background technology
Current, under the increasingly severe background of global warming problem, energy savings, reduce greenhouse gas emission and become the major issue that the whole world is faced jointly.Take low energy consumption, low pollution, low emission as basic low-carbon economy, will become the important directions of economic development.At lighting field, the semiconductor light emitting product take LED (light-emitting diode) as representative has energy-saving and environmental protection, and the advantage such as light source life is long, volume is little, is just attracting common people's sight.
The conventional structure of gallium nitride based light emitting diode as shown in Figure 1 at present: comprise substrate 4, the first n type semiconductor layer 1, the multiple quantum well layer 2 of control emission wavelength, the second p type semiconductor layer 3.Multi-quantum pit structure is the multicycle loop structure of InGaN/GaN, wherein last to build layer and base layer with the front be same structure.
For GaN base LED, luminous more compound mainly the concentrating in last trap of charge carrier.LED for conventional structure, lattice mismatch and thermal mismatching that trap is built layer cause stronger compressive strain effect, directly consequence causes electronic carrier to leak out quantum well, the problems such as quantum well difficulty, polarized electric field enhancing are injected in the hole, thereby affects internal quantum efficiency and current efficiency.
Summary of the invention
Technical problem to be solved by this invention provides a kind of novel GaN based LED device and preparation method thereof, can either improve the luminous efficiency of device, does not affect again other photoelectric characteristic of device.
For achieving the above object, technical scheme provided by the invention is: a kind of novel GaN based LED device structure is provided, last quantum comprising the substrate that stacks gradually, the first semiconductor carriers implanted layer, multi-quantum pit structure, multi-quantum pit structure is built (LQB) and the second semiconductor carriers implanted layer, it is multilayer or multicomponent composite construction that last quantum of described multi-quantum pit structure is built (LQB), and the quantum of described last growth is built the epitaxial structure for one or more layers GaN class and alloy material thereof.
Aforesaid structure is characterized in that: substrate can be sapphire, carborundum, or silicon.
Aforesaid structure is characterized in that: it is characterized in that: the GaN class alloy material of described last quantum barrier layer is a kind of and several among AlGaN, InGaN, the AlInGaN.
Aforesaid structure is characterized in that: the number of plies of described last quantum barrier layer is the 0-8 layer.
Aforesaid structure is characterized in that: the bed thickness of described last quantum barrier layer is 3-600A.
Aforesaid structure is characterized in that: the element that described last quantum barrier layer mixes is one or more among Mg, Si, Zn, the Ge.
The technical scheme of the manufacture method of light-emitting diode of the present invention is that behind the n type gallium nitride semiconductor layer of making, employing MOCVD method comprises the steps:
1) growing GaN layer: growth temperature is set in 700-900 ℃, and the pressure of reactor is 100-500Tor, passes into high-purity ammonia of 10-60L and the high pure nitrogen of 10-90L, passes into the TEG that flow is 10-600sccm, and growth time is 20-600s;
2) growing InGaN layer: growth temperature is set in 700-900 ℃, the pressure of reactor is 100-500Tor, pass into high-purity ammonia of 10-60L and the high pure nitrogen of 10-90L, pass into the TEG that flow is 10-600sccm, also pass into the TMIn that flow is 10-600sccm, growth time is 20-600s;
3) repeat above step (1) and (2) and form a quantum well cycle, the quantum well in 3-15 cycle of growth;
4) finish the growth of last quantum well after, growth temperature is set in 700-900 ℃, the pressure of reactor is 100-500Tor, pass into high-purity ammonia of 10-60L and the high pure nitrogen of 10-90L, pass into the TEG that flow is 10-600sccm, pass into the TMIn that flow is 0-600sccm, passing into flow is the two luxuriant magnesium of 0-1000sccm, pass into the TMA that flow is 0-300sccm, last quantum of growth multilayer or multicomponent composite construction is built epitaxial loayer.Follow-up other parts of supervention optical diode of whole multi-quantum pit structure are finished in growth.
A kind of novel GaN based LED device provided by the invention and preparation method thereof advantage is: can the slowly-releasing Multiple Quantum Well and P type layer between effect of stress, improve effective injection in hole, improve internal quantum efficiency and the current efficiency of device.
Description of drawings:
The generalized section of the GaN based light-emitting diode structure of Fig. 1 conventional structure.
The generalized section of Fig. 2 light-emitting diode of the present invention.
Among the figure: the first n type semiconductor layer 1, the multiple quantum well layer 2 of control emission wavelength, comprises that substrate 4, last quantum build (LQB) 5, conventional GaN quantum barrier layer 10, conventional InGaN quantum well layer 11 at the second p type semiconductor layer 3
Embodiment
In order to be described more specifically the present invention, now provide some embodiment.But content involved in the present invention is not limited only to these embodiment.
The invention provides a kind of novel GaN based LED device structure, as shown in Figure 2, last quantum comprising the substrate 4 that stacks gradually, the first semiconductor carriers implanted layer 1, multi-quantum pit structure 2, multi-quantum pit structure is built (LQB) 5 and the second semiconductor carriers implanted layer 3, it is multilayer or multicomponent composite construction that last quantum of described multi-quantum pit structure is built (LQB) 5, and described last quantum barrier layer is the epitaxial structure of one or more layers GaN class and alloy material thereof.
Aforesaid structure is characterized in that: substrate can be sapphire, carborundum, or silicon.
Aforesaid structure is characterized in that: it is characterized in that: the GaN class alloy material of described last quantum barrier layer is a kind of and several among AlGaN, InGaN, the AlInGaN.
Aforesaid structure is characterized in that: the number of plies of described last quantum barrier layer is the 0-8 layer.
Aforesaid structure is characterized in that: the bed thickness of described last quantum barrier layer is 3-600A.
Aforesaid structure is characterized in that: the element that described last quantum barrier layer mixes is one or more among Mg, Si, Zn, the Ge.
Embodiment 1, and structure comprises: the N-shaped semiconductor layer that stacks gradually on the Sapphire Substrate 4 is as the first semiconductor carriers implanted layer In in 1,7 cycles 0.25Ga 0.75N/GaN Multiple Quantum Well 2, p-type semiconductor layer are as the second semiconductor carriers implanted layer 3, and wherein last quantum well of Multiple Quantum Well is with the well structure of front, and last quantum is built 5 layers of structure and is: In xGa 1-xThe composite construction of N layer and p-type GaN layer.The In of described composite construction xGa 1-xThe indium component x of N layer is between the 0.01-0.25, In xGa 1-xThe thickness of N layer is between the 1-40nm, and the thickness of p-type GaN layer is between the 1-60nm, and the doping content of Mg is 1.0 * 10 17-2.0 * 10 20Cm -3
Embodiment 2, and structure comprises: the N-shaped semiconductor layer that stacks gradually on the Sapphire Substrate 4 is as the first semiconductor carriers implanted layer In in 1,11 cycles 0.15Ga 0.85N/GaN Multiple Quantum Well 2, p-type semiconductor layer are as the second semiconductor carriers implanted layer 3, and wherein last quantum well of Multiple Quantum Well is with the well structure of front, and last quantum is built 5 layers of structure and is: In xGa 1-xN layer and Al yGa 1-yThe composite construction of N layer.The In of described composite construction xGa 1-xThe x of N layer is between the 0.01-0.15, In xGa 1-xThe thickness of N layer is between the 1-40nm; Al yGa 1-yThe y of N layer is between the 0.01-0.25, Al yGa 1-yThe thickness of N layer is between the 1-40nm.
Embodiment 3, and structure comprises: the N-shaped semiconductor layer that stacks gradually on the silicon substrate 4 is as the first semiconductor carriers implanted layer In in 1,11 cycles 0.15Ga 0.85N/GaN Multiple Quantum Well 2, p-type semiconductor layer are as the second semiconductor carriers implanted layer 3, and wherein last quantum well of Multiple Quantum Well is with the well structure of front, and last quantum is built 5 layers of structure and is: In xGa 1-xN layer, p-type GaN layer and Al yGa 1-yThe composite construction of N layer.The In of described composite construction xGa 1-xThe x of N layer is between the 0.01-0.15, In xGa 1-xThe thickness of N layer is between the 1-40nm; The thickness of p-type GaN layer is between the 1-40nm, and the doping content of Mg is 1.0 * 10 17-2.0 * 10 20Cm -3Al yGa 1-yThe y of N layer is between the 0.01-0.25, Al yGa 1-yThe thickness of N layer is between the 1-40nm.
Embodiment 4, and structure comprises: the N-shaped semiconductor layer that stacks gradually on the silicon carbide substrates 4 is as the first semiconductor carriers implanted layer In in 1,7 cycles 0.15Ga 0.85N/GaN Multiple Quantum Well 2, p-type semiconductor layer are as the second semiconductor carriers implanted layer 3, and wherein last quantum well of Multiple Quantum Well is with the well structure of front, and last quantum is built 5 layers of structure and is: Al yIn xGa 1-x-yThe multiple component structure of N layer.The Al of described multiple component structure yIn xGa 1-x-yThe x of N layer is between the 0.01-0.15, and y is between the 0.01-0.35, Al yIn xGa 1-x-yThe thickness of N layer is between the 1-50nm.
Above-mentioned novel light-emitting diode structure provided by the present invention is improved last quantum barrier layer of Multiple Quantum Well, this structure is effect of stress between slowly-releasing Multiple Quantum Well and the P type layer effectively, improve the injection efficiency in hole, increase internal quantum efficiency and the current efficiency of device, finally improved the luminous efficiency of light-emitting diode.

Claims (8)

1. novel GaN based light-emitting diode structure, comprising: last quantum of the substrate that stacks gradually, the first semiconductor carriers implanted layer, multi-quantum pit structure, multi-quantum pit structure is built (LQB) and the second semiconductor carriers implanted layer, it is multilayer or multicomponent composite construction that last quantum of described multi-quantum pit structure is built (LQB), and described last quantum is built the epitaxial structure for one or more layers GaN class and alloy material thereof.
2. light emitting diode construction as claimed in claim 1 is characterized in that: last quantum of described multi-quantum pit structure is built (LQB) and is multi-layer compound structure.
3. light emitting diode construction as claimed in claim 1 is characterized in that: the GaN class alloy material that described last quantum is built is a kind of and several among AlGaN, InGaN, the AlInGaN.
4. light emitting diode construction as claimed in claim 1, it is characterized in that: last quantum barrier layer structure is In xGa 1-xThe stacked composite construction that adds p-type GaN layer of N.
5. light emitting diode construction as claimed in claim 1, it is characterized in that: last quantum barrier layer structure is In xGa 1-xThe stacked Al that adds of N yGa 1-yThe composite construction of N layer.
6. light emitting diode construction claimed in claim 1, it is characterized in that: last quantum barrier layer structure is In xGa 1-xThe stacked p-type GaN layer that adds of N, Al again superposes yGa 1-yThe composite construction of N layer.
7. light emitting diode construction claimed in claim 1, it is characterized in that: last quantum barrier layer structure is In xGa 1-xThe stacked GaN layer that adds of N, the composite construction of the p-type that superposes again GaN layer.
8. manufacture method such as right 1 described light emitting diode construction is characterized in that: behind the n type gallium nitride semiconductor layer of making, adopt the MOCVD method, comprise following growth step:
(1) growing GaN layer: growth temperature is set in 700-900 ℃, and the pressure of reactor is 100-500Tor, passes into high-purity ammonia of 10-60L and the high pure nitrogen of 10-90L, passes into the TEG that flow is 10-600sccm, and growth time is 20-600s;
(2) growing InGaN layer: growth temperature is set in 700-900 ℃, the pressure of reactor is 100-500Tor, pass into high-purity ammonia of 10-60L and the high pure nitrogen of 10-90L, pass into the TEG that flow is 10-600sccm, also pass into the TMIn that flow is 10-600sccm, growth time is 20-600s;
(3) repeat above step (1) and (2) and form a quantum well cycle, the quantum well in 3-15 cycle of growth;
(4) finish the growth of last quantum well after, growth temperature is set in 700-900 ℃, the pressure of reactor is 100-500Tor, pass into high-purity ammonia of 10-60L and the high pure nitrogen of 10-90L, pass into the TEG that flow is 10-600sccm, pass into the TMIn that flow is 0-600sccm, passing into flow is the two luxuriant magnesium of 0-1000sccm, pass into the TMA that flow is 0-300sccm, last quantum of growth multilayer or multicomponent composite construction is built epitaxial loayer.Growth continues to make other parts of light-emitting diode after finishing whole multi-quantum pit structure.
CN2012101145352A 2012-04-17 2012-04-17 Novel GaN-based light emitting diode device and producing method thereof Pending CN103378241A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104835885A (en) * 2015-05-13 2015-08-12 湘能华磊光电股份有限公司 LED epitaxial layer structure and preparation method thereof, and LED device provided with the structure
CN106057989A (en) * 2016-06-22 2016-10-26 华灿光电(苏州）有限公司 Manufacturing method for epitaxial wafer of GaN-based light-emitting diode
CN110660872A (en) * 2019-09-27 2020-01-07 中国科学技术大学 Multi-quantum well structure, photoelectric device epitaxial wafer and photoelectric device

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Cited By (3)

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CN110660872A (en) * 2019-09-27 2020-01-07 中国科学技术大学 Multi-quantum well structure, photoelectric device epitaxial wafer and photoelectric device

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Application publication date: 20131030