CN105140367B - A kind of GaN base LED epitaxial structure - Google Patents
A kind of GaN base LED epitaxial structure Download PDFInfo
- Publication number
- CN105140367B CN105140367B CN201510639315.5A CN201510639315A CN105140367B CN 105140367 B CN105140367 B CN 105140367B CN 201510639315 A CN201510639315 A CN 201510639315A CN 105140367 B CN105140367 B CN 105140367B
- Authority
- CN
- China
- Prior art keywords
- gan
- layer
- layers
- epitaxial structure
- led epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000004888 barrier function Effects 0.000 claims abstract description 17
- 229910016920 AlzGa1−z Inorganic materials 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 7
- 230000005855 radiation Effects 0.000 abstract description 3
- 230000006798 recombination Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 3
- 150000004767 nitrides Chemical class 0.000 description 6
- 238000000034 method Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of GaN base LED epitaxial structure, is related to LED growth technologies field, includes from bottom to top：Substrate, nucleating layer, layer of undoped gan, n-type GaN layer, luminescent layer, electronics barrier and p-type GaN layer, are characterized in：The electronics barrier is by AlxGa1‑xN layers, multicycle GaN/InyGa1‑yN super lattice structure layers and AlzGa1‑zN layers are formed；Wherein, 0<x≤0.8,0<y≤0.2,0<z≤0.5.The present invention can effectively hinder a grade electronics leakage, increase the radiation recombination in electronics and hole, improve LED internal quantum efficiency and the power output of light, moreover it is possible to strengthen LED antistatic effect.
Description
Technical field
The present invention relates to the growth technology field of nitride semiconductor photogenerator, more particularly to a kind of GaN base LED
Epitaxial structure.
Background technology
GaN base light emitting（LED）It is the Typical Representative in nitride semiconductor photogenerator, GaN base LED can be sent out
Go out blue light, encapsulated together with YAG yellow fluorescent powders and send white light with regard to that can mix.Lighting Industry be unable to do without white light source, and LED is again
With it is safe efficient, energy-conservation many advantages, such as, be a new generation solid light source, so the LED industry and phase of last decade
Rapidly, the work of GaN base LED industry and cutting edge technology is Hot Contents at present for pass technology development.
The design and growth of epitaxial structure are LED forward position key technology, the particularly GaN base under high-power high-current
The structure design and growing technology of LED component.Traditional GaN base LED epitaxial structure, usually gives birth to successively on a sapphire substrate
Long nucleating layer, layer of undoped gan, n-type GaN layer, multiple quantum well light emitting, AlGaN barriers and p-type GaN layer.Due to traditional
LED structure is only with single AlGaN electronics barriers, so the resistance shelves scarce capacity to electronics, causes electronics leakage obvious,
Cause the Net long wave radiation recombination rate in LED component internal electron hole low, so as to cause LED internal quantum efficiency and light output efficiency not
It is high.
The ESD of LED component at present（ElectroStatic discharge, static discharge）The main method of protection is logical
The quality for improving LED epitaxial structure is crossed, and Zener diode or increase current extending are added in fact in LED epitaxial structure
It is existing.For example Chinese invention patent prospectus CN101335313 (publication date on December 31st, 2008) discloses a kind of LED junction
The nitride layer or inserted not between n types nitride layer and luminescent layer that insertion undopes among the n-type nitride layer of structure
The nitride layer of doping, its new LED epitaxial structure formed are equivalent to add an electric capacity, so as to improve the anti-of ESD
Protect performance.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of GaN base LED epitaxial structure, and the structure can improve LED
Luminous efficiency and enhancing ESD protective capacities.
In order to solve the above technical problems, the GaN base LED epitaxial structure of the present invention, includes from bottom to top：GaN nucleating layers,
Layer of undoped gan, n-type GaN layer, multiple quantum well light emitting layer, electronics barrier and p-type GaN layer, the electronics barrier be by
AlxGa1-xN layers, multicycle GaN/InyGa1-yN super lattice structure layers and AlzGa1-zN layers (referred to as A-SL-A layers) are formed；Its
In, 0<x≤0.8, 0<y≤0.2, 0<z≤0.5.
One of key features of the present invention are that A-SL-A structures are inserted between multiple quantum well light emitting layer and p-type GaN layer
Electronics barrier.The structure of the electronics barrier is AlxGa1-xN layers are grown on the luminescent layer of LED epitaxial structure, are connect
The GaN/In of growth multicycleyGa1-yN super lattice structure layers, finally grow AlzGa1-zN layers.The week more of the electronics barrier
Phase GaN/InyGa1-yN super lattice structure layers, its periodicity is between 2 to 15, and GaN and In in superlattice structureyGa1-yN materials
Thickness is all in 1nm between 6nm.Al in the electronics barrierxGa1-xN layers and AlzGa1-zThe maximum gauge of N layers does not surpass
Cross 20nm.
Compared with prior art, the beneficial effects of the invention are as follows：By between multiple quantum well light emitting layer and p-type GaN layer
The electronics barrier of A-SL-A structures is inserted, effectively electronics can be limited in luminescent layer, enhancing luminous zone electronics and sky
The probability of the radiation recombination in cave, and then improve LED luminous efficiency.On the other hand, the electronics barrier of A-SL-A structures adds
Into LED epitaxial structure, it is equivalent to add multiple electric capacity in LED structure, LED can be made there are more preferable anti-ESD abilities.
Brief description of the drawings
Fig. 1 is the schematic diagram of GaN base LED epitaxial structure of the present invention；
Fig. 2 is the electronics barrier schematic diagram in GaN base LED epitaxial structure of the present invention；
Operating currents and interior quantum luminous efficiency result of the Fig. 3 for embodiment in new GaN base LED epitaxial structure in example
Figure.
Fig. 4 is the operating current and optical output power result figure of embodiment in new GaN base LED epitaxial structure in example.
In figure：1 is substrate；2 be nucleating layer；3 be layer of undoped gan；4 be n-type GaN layer；5 be multiple quantum well light emitting layer；
6 be A-SL-A electronics barriers；61 be AlxGa1-xN layers；62 be GaN layer；63 be InyGa1-yN layers；64 be AlzGa1-zN layers；7 are
P-type GaN layer.
Embodiment
The embodiment of the present invention is described further below in conjunction with the accompanying drawings, but embodiments of the present invention are unlimited
In this.
In the embodiment, GaN base LED epitaxial structure is in sapphire（Al2O3）A layer thickness 25nm is grown on substrate first
GaN material nucleating layer, then nucleation layer surface on growth thickness 1um layer of undoped gan, then successively grow Si doping
GaN n-type GaN layer（Thickness is 2um, and concentration is 5 × 1018 cm-3）, 6 cycle In0.15Ga0.85N/GaN multiple quantum well light emitting
Layer（In0.15Ga0.85N and GaN thickness is respectively 2.5nm and 10nm）, electronics barrier（As example, AlxGa1-xN x is
0.15, InyGa1-yY in N is 0.03, AlzGa1-zZ in N layers is 0.15, and each thickness degree is all 1nm, GaN/InyGa1-yN
The periodicity of superlattice structure is 9）, and Mg doping GaN p-type GaN layer（Thickness 0.3um, concentration are 7 × 1017cm-3）.This is outer
Prolong structure using atomic-layer epitaxial growth method, the methods of being MOCVD or MBE.
Shown in LED epitaxial structure progress photoelectric properties analysis to the embodiment, obtained analysis result as Fig. 3 and Fig. 4.
Learnt by Fig. 3, new GaN base LED epitaxial structure of the invention has more preferable internal quantum efficiency, especially in larger operating current
（200mA）Under, still keep relatively low decay（Only 2.1%）, show that the electronics barrier that the present embodiment uses can limit electronics very well
Leakage.And the internal quantum efficiency of traditional GaN base LED epitaxial structure is relatively low, under 200A operating currents, luminous efficiency decay compared with
It hurry up, reach 21.2%.Learnt by Fig. 4, the GaN base LED epitaxial structure of the present embodiment has higher light output work(than traditional structure
Rate（300um × 300um scale chips are cut into LED to carry out test and comparison）.
In addition, by carrying out anti-ESD performance tests to the GaN base LED epitaxial structure of the embodiment of the present invention, resist in human body quiet
Under power mode test（Experiment 3 times, every minor tick 1 second）, when backward voltage reaches 2500V, the reverse value of current of epitaxial structure is still
For O.And traditional GaN base LED epitaxial structure reaches 1500V or so in backward voltage and larger reverse value of current just occurs,
I.e. epitaxial structure has been destroyed, and it is preferably anti-that such comparative test illustrates that the GaN base LED epitaxial structure of the present embodiment has
ESD abilities.
The thickness of above example, technological parameter etc. are signal, and those skilled in the art are not violating this hair
Bright thought and any change or modification gone out on the premise of spirit, all should be regarded as within protection scope of the present invention.Such as
As more examples, in the case where other conditions are constant, make the Al in electronics barrierxGa1-xN x is 0.8,
InyGa1-yY in N is 0.2, AlzGa1-zZ in N layers is 0.5, and each thickness degree is all 1nm, GaN/InyGa1-yN superlattices knots
The periodicity of structure is 3, by same method of testing, all can equally be drawn in the range of aforementioned definition identical with examples detailed above
Conclusion.
Claims (4)
1. a kind of GaN base LED epitaxial structure, it is included in the GaN nucleating layers grown successively on substrate, layer of undoped gan, n-type GaN
Layer, multiple quantum well light emitting layer, electronics barrier and p-type GaN layer, it is characterised in that：The electronics barrier is by AlxGa1-xN
Layer, multicycle GaN/InyGa1-yN super lattice structure layers and AlzGa1-zN layers are formed；Wherein, 0<x≤0.8, 0<y≤0.2, 0<
z≤0.5。
2. GaN base LED epitaxial structure according to claim 1, it is characterised in that the Al in the electronics barrierxGa1-xN
Layer is grown on the luminescent layer of LED epitaxial structure, then grows the GaN/In of multicycleyGa1-yN super lattice structure layers, so
Regrowth Al afterwardszGa1-zN layers.
3. GaN base LED epitaxial structure according to claim 1 or 2, it is characterised in that the multicycle GaN/InyGa1-yN
Super lattice structure layers, its periodicity are 2 to 15, and each cycle includes GaN layer and In successivelyyGa1-yN material layers, each GaN layer
And InyGa1-yThe thickness of N material layers is 1nm to 6nm.
4. GaN base LED epitaxial structure according to claim 3, it is characterised in that the Al in the electronics barrierxGa1-xN
Layer and AlzGa1-zThe thickness of N layers is no more than 20nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510639315.5A CN105140367B (en) | 2015-09-29 | 2015-09-29 | A kind of GaN base LED epitaxial structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510639315.5A CN105140367B (en) | 2015-09-29 | 2015-09-29 | A kind of GaN base LED epitaxial structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105140367A CN105140367A (en) | 2015-12-09 |
| CN105140367B true CN105140367B (en) | 2018-03-09 |
Family
ID=54725651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510639315.5A Active CN105140367B (en) | 2015-09-29 | 2015-09-29 | A kind of GaN base LED epitaxial structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105140367B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105576098A (en) * | 2016-02-23 | 2016-05-11 | 河源市众拓光电科技有限公司 | Gallium nitride based light emitting diode epitaxial structure and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102484180A (en) * | 2009-11-12 | 2012-05-30 | 松下电器产业株式会社 | Gallium nitride compound semiconductor light-emitting element |
| CN102570308A (en) * | 2012-01-16 | 2012-07-11 | 苏州纳睿光电有限公司 | Nitride semiconductor laser |
| CN203192834U (en) * | 2013-03-13 | 2013-09-11 | 扬州中科半导体照明有限公司 | Epitaxial structure in a high-brightness GaN-based green LED |
| CN205028916U (en) * | 2015-09-29 | 2016-02-10 | 华南师范大学 | LED epitaxial structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005051170A (en) * | 2003-07-31 | 2005-02-24 | Toyoda Gosei Co Ltd | Group iii nitride compound semiconductor light emitting element |
| JP5480827B2 (en) * | 2011-01-07 | 2014-04-23 | シャープ株式会社 | Nitride semiconductor light emitting device and manufacturing method thereof |
-
2015
- 2015-09-29 CN CN201510639315.5A patent/CN105140367B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102484180A (en) * | 2009-11-12 | 2012-05-30 | 松下电器产业株式会社 | Gallium nitride compound semiconductor light-emitting element |
| CN102570308A (en) * | 2012-01-16 | 2012-07-11 | 苏州纳睿光电有限公司 | Nitride semiconductor laser |
| CN203192834U (en) * | 2013-03-13 | 2013-09-11 | 扬州中科半导体照明有限公司 | Epitaxial structure in a high-brightness GaN-based green LED |
| CN205028916U (en) * | 2015-09-29 | 2016-02-10 | 华南师范大学 | LED epitaxial structure |
Non-Patent Citations (2)
| Title |
|---|
| Performance Enhancement of Near-UV Light-Emitting Diodes With an InAlN/GaN Superlattice Electron-Blocking Layer;Yun-Yan Zhang，et al;《IEEE ELECTRON DEVICE LETTERS》;20120731;第33卷(第7期);第994-996页 * |
| Performance of Blue LEDs With N-AlGaN/N-GaN Superlattice as Electron-Blocking Layer;Xiaopeng Yu，et al;《IEEE PHOTONICS TECHNOLOGY LETTERS》;20140601;第26卷(第11期);第1132-1135页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105140367A (en) | 2015-12-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9842963B2 (en) | GaN-based LED epitaxial structure and preparation method thereof | |
| CA2528719C (en) | Nitride semiconductor light emitting device | |
| CN102185056B (en) | Gallium-nitride-based light emitting diode capable of improving electron injection efficiency | |
| CN105870283B (en) | A kind of light emitting diode with combined polarity face electronic barrier layer | |
| US10535796B2 (en) | Semiconductor light emitting device | |
| WO2015143902A1 (en) | Multi-quantum well structure and light-emitting diode using same | |
| CN105449051B (en) | One kind is using MOCVD technologies in GaN substrate or GaN/Al2O3The method that high brightness homogeneity LED is prepared in compound substrate | |
| CN103943746A (en) | GaN-based LED epitaxial wafer and manufacturing method thereof | |
| TWI445204B (en) | Light emitting device with graded composition hole tunneling layer | |
| EP1794813B1 (en) | Nitride semiconductor light emitting device and fabrication method thereof | |
| CN102157646A (en) | Nitride LED structure and preparation method thereof | |
| US11848401B2 (en) | Semiconductor light emitting device | |
| KR101497082B1 (en) | Nitride semiconductor light emitting device using electron reservoir and spreading layer | |
| CN104821355A (en) | Epitaxial structure capable of effectively reducing Droop effect of LED | |
| CN206401345U (en) | A kind of LED epitaxial slice | |
| CN105140367B (en) | A kind of GaN base LED epitaxial structure | |
| Zhang et al. | Effect of Mg doping in GaN interlayer on the performance of green light-emitting diodes | |
| CN111326622A (en) | Light-emitting diode based on hole adjusting layer | |
| CN205028916U (en) | LED epitaxial structure | |
| US10978612B2 (en) | Semiconductor light emitting device | |
| CN205900578U (en) | Light emitting diode epitaxial wafer | |
| CN105355649A (en) | Light emitting diode epitaxial wafer and fabrication method thereof | |
| Bouchachia et al. | Improvement of InGaN/GaN Blue LED Performance by a BGaN Back-Barrier Layer: Simulation Study | |
| CN111326624A (en) | Semiconductor light emitting element capable of improving light emitting quality and light emitting efficiency | |
| CN105405940B (en) | LED epitaxial slice with new structure and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |