CN103311394A - GaN-based LED and epitaxial growth method thereof - Google Patents
GaN-based LED and epitaxial growth method thereof Download PDFInfo
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Abstract
The invention discloses a GaN-based LED and an epitaxial growth method thereof. The GaN-based LED epitaxial structure is characterized in that the structure is an electronic barrier layer composed of optimized Mg-doped p-type AlGaN-GaN superlattice. When repeat cycles of the p-type AlGaN-GaN superlattice reach 4 to 12 and the total thickness is 50nm to 150nm, the crystal quality of an epitaxial wafer is improved significantly, so that ESD yield of the LED is effectively increased. The GaN-based LED and the epitaxial growth method thereof have the advantages that the LED made of the electronic barrier layer composed of the p-type AlGaN-GaN superlattice has excellent compressive performance, the ESD yield can be higher than 97%, and the LED has extremely low positive operating voltage and extremely high lighting efficiency.
Description
Technical field
The invention belongs to semiconductor photoelectronic device manufacturing technology field, mainly disclose a kind of light-emitting diode and epitaxial growth method thereof with superlattice structure electronic barrier layer.
Background technology
Along with the raising of growth technology, the luminance and efficiency of gallium nitride based light emitting diode has obtained obvious improvement.But in order to realize the suitability for industrialized production of high-performance LED device, the antistatic effect that further improves light-emitting diode is very crucial.Researcher experimentally (referring to document [1]) verified and introduced the recombination luminescence efficient that superlattice structure can increase the electron hole in the inside of gallium nitride based light emitting diode, and theoretical and experimentally (referring to document [2-5]) confirmed that superlattice structure can improve the antistatic effect of light-emitting diode effectively.
When placing between the p-type gallium nitride layer of light-emitting diode and the Multiple Quantum Well active area superlattice structure as electronic barrier layer, can therefore increase the concentration of two-dimensional hole gas on the one hand, thereby increase the recombination luminescence efficient of the electron hole of light-emitting diode.On the other hand, in the process that the thickness of superlattice electronic barrier layer progressively increases, in the Multiple Quantum Well surfaces of active regions because larger lattice mismatch and the caused dislocation of coefficient of thermal expansion mismatch and defective can obtain partially filled and compensation between Sapphire Substrate and the gallium nitride material, thereby crystal mass is promoted, reduce electronics and crossed the possibility that active luminous zone forms the electric leakage raceway groove along dislocation and defective, thereby can promote the antistatic effect of light-emitting diode.
In addition, the increase of superlattice electronic blocking layer thickness not only can improve the antistatic effect of light-emitting diode, can also effectively reduce the forward operating voltage of light-emitting diode, and improving luminous efficiency.But, because blocked up electronic barrier layer can increase the resistivity of whole p-type gallium nitride ohmic contact layer, thereby cause the forward operating voltage of light-emitting diode to increase, energy loss increases, and luminous efficiency reduces.Therefore, the superlattice electronic barrier layer (comprising the structural parameters such as repetition period number, each layer thickness and component) of seeking an optimal design just becomes one of key factor of further raising light-emitting diode electrical and optical properties.
List of references
[1]C.Liu,T.Lu,L.Wu,H.Wang,Y.Yin,G.Xiao,Y.Zhou,S.Li,“Enhanced?Performance?of?Blue?Light-Emitting?Diodes?With?InGaN-GaN?Superlattice?as?Hole?Gathering?Layer”,IEEE?Photonics?Technology?Lett.Vol.24,NO.14,July15,2012.
[2] what Tsing-Hua University, Tian Yan, " a kind of epitaxial growth method that improves the gallium nitride LED chip antistatic effect ", Chinese patent, grant number: CN100470865C, authorization date: 2009-03-18.
[3]H.J.Kim,S.Choi,S.S.Kim,J.H.Ryou,P.D.Yoder,R.D.Dupuis,A.M.Fischer,K.W.Sun,F.A.Ponce,“Improvement?of?quantum?efficiency?by?employing?active-layer-friendly?lattice-matched?InAlN?electron?blocking?layer?in?green?light-emitting?diodes”,Appl.Phys.Lett.96(2010)101102.
[4]S.Choi,H.J.Kim,S.S.Kim,J.Liu,J.Kim,J.H.Ryou,R.D.Dupuis,A.M.Fischer,F.A.Ponce,“Improvement?of?peak?quantum?efficiency?and?efficiency?droop?in?III-nitride?visible?light-emitting?diodes?with?an?InAlN?electron-blocking?layer”,Appl.Phys.Lett.96(2010)221105.
[5]K.Kumakura,N.Kobayashi,“Increased?Electrical?Activity?of?Mg-Acceptors?inAlxGa1-xN-GaN?Superlattices”,Jpn.J.Appl.Phys.38(1999),L1012.
Summary of the invention
The objective of the invention is to disclose a kind of gallium nitride based light emitting diode and epitaxial growth method thereof for the existing problem and shortage of gallium nitride based light emitting diode on antistatic effect and luminous efficiency.This light emitting diode epitaxial structure is characterised in that the electronic barrier layer that the p-type aluminum gallium nitride-the gallium nitride superlattice form that has between the p-type gallium nitride layer that indium gallium nitrogen-gallium nitride Multiple Quantum Well active illuminating layer and magnesium mixes through optimizing, magnesium mixes.When the repetition period number of p-type aluminum gallium nitride-gallium nitride superlattice is 4 to 12, and gross thickness is when being 50 to 150nm, the crystal mass of epitaxial wafer be improved significantly, thereby effectively improve the ESD yield of light-emitting diode.And, the excellent combination property of the light-emitting diode that the electronic barrier layer that adopts p-type aluminum gallium nitride of the present invention-gallium nitride superlattice to form is prepared, namely not only can obtain to be higher than 97% ESD yield, and have extremely low forward operating voltage and high luminous efficiency.
A kind of gallium nitride based light emitting diode structure disclosed in this invention as shown in Figure 1, MOCVD (metal-organic chemical vapor deposition equipment) growth technology is adopted in its growth, concrete growth step is: the Sapphire Substrate (101) in (0001) crystal orientation is put into reative cell, in atmosphere of hydrogen, be warming up to 1000 to 1100 ℃, graphical sapphire substrate was carried out high temperature purification 5 to 10 minutes; Be cooled to 500 to 600 ℃, the gallium nitride resilient coating (102) of growth 20 to 30nm thickness; Be warming up to 1000 to 1100 ℃, the non-doped gallium nitride layer (103) of growth 1.0 to 3.0 μ m thickness; Adjust temperature to 1000 to 1050 ℃, the silicon doping N-shaped gallium nitride layer (104) of growth 2.0 to 3.0 μ m thickness; Be cooled to 750 to 850 ℃, the current-diffusion layer (106) that the silicon doping N-shaped indium gallium nitrogen of growth 50 to 100nm thickness and gallium nitride form; Adjust temperature to 700 to 900 ℃, the indium gallium nitrogen in 5 to 15 cycles of growth-gallium nitride Multiple Quantum Well active illuminating layer (107); Be warming up to 900 to 1000 ℃, grow 4 to 12 cycles, gross thickness are 50 to 150nm magnesium doped p type aluminum gallium nitride-gallium nitride superlattice structure electronic barrier layer (108); Keeping temperature is 900 to 1000 ℃, the p-type gallium nitride ohmic contact layer (109) that the magnesium of growth 150 to 300nm thickness mixes; Be cooled to room temperature, finish growth course.
Gallium nitride based light emitting diode disclosed in this invention and epitaxial growth method thereof, it is characterized in that the structural parameters of the p-type aluminum gallium nitride that described magnesium mixes-electronic barrier layer (108) that the gallium nitride superlattice structure forms through particular design and optimization, wherein the scope of the al composition of p-type gallium aluminium nitrogen layer is 0.1 to 0.3.
In the preferred situation, the periodicity of the p-type aluminum gallium nitride that described magnesium mixes-gallium nitride superlattice structure electronic barrier layer (108) is 8, and the thickness of p-type aluminum gallium nitride and gallium nitride layer is respectively 9nm and 1nm.
Gallium nitride based light emitting diode disclosed in this invention is applicable to also be applicable to the gallium nitride based light emitting diode of other structure types such as vertical stratification, inverted structure with the side structure gallium nitride based light emitting diode.
The present invention discloses a kind of gallium nitride based light emitting diode and epitaxial growth method thereof.This light emitting diode epitaxial structure is characterised in that the electronic barrier layer that the p-type aluminum gallium nitride-the gallium nitride superlattice form that has between the p-type gallium nitride layer that indium gallium nitrogen-gallium nitride Multiple Quantum Well active illuminating layer and magnesium mixes through optimizing, magnesium mixes.When the repetition period number of p-type aluminum gallium nitride-gallium nitride superlattice is 4 to 12, and gross thickness is when being 50 to 150nm, the crystal mass of epitaxial wafer be improved significantly, thereby effectively improve the ESD yield of light-emitting diode.The excellent combination property of the light-emitting diode that the electronic barrier layer that adopts preferred p-type aluminum gallium nitride-gallium nitride superlattice to form is prepared not only can obtain to be higher than 97% ESD yield, and have extremely low forward operating voltage and high luminous efficiency.
Description of drawings
Fig. 1 is the end view with gallium nitride based light emitting diode of p-type aluminum gallium nitride-gallium nitride superlattice structure electronic barrier layer.
The epitaxial structure of gallium nitride based light emitting diode is followed successively by Sapphire Substrate (101) from bottom to up among Fig. 1, gallium nitride resilient coating (102), non-doped gallium nitride layer (103), the N-shaped gallium nitride layer (104) of silicon doping, the current-diffusion layer (106) that the N-shaped indium gallium nitrogen of silicon doping and gallium nitride form, indium gallium nitrogen-gallium nitride Multiple Quantum Well active illuminating layer (107), the electronic barrier layer (108) that the p-type aluminum gallium nitride that magnesium mixes-gallium nitride superlattice structure forms, the p-type gallium nitride layer (109) that magnesium mixes, transparency conducting layer (110) and N-shaped electrode (105) and p-type electrode (111).
Fig. 2 is the ESD yield of gallium nitride LED chip under 2000 volts of reverse voltages, and forward operating voltage V under the 20mA electric current
f, with the graph of a relation of p-type aluminum gallium nitride layer thickness variation in p-type aluminum gallium nitride-gallium nitride superlattice structure.Wherein, light-emitting diode chip for backlight unit is of a size of 12 * 28mil
2, the repetition period number of p-type aluminum gallium nitride-gallium nitride superlattice structure is 8, and p-type gallium nitride layer thickness keeps 1nm constant in the superlattice, but the varied in thickness scope of p-type gallium aluminium nitrogen layer is 1 to 10nm.
Fig. 3 is that light-emitting diode chip for backlight unit luminous power LOP is with the graph of a relation of p-type aluminum gallium nitride layer thickness variation in p-type aluminum gallium nitride-gallium nitride superlattice structure.Wherein, light-emitting diode chip for backlight unit is of a size of 12 * 28mil
2, the repetition period number of p-type aluminum gallium nitride-gallium nitride superlattice structure is 8, and p-type gallium nitride layer thickness keeps 1nm constant in the superlattice, but the varied in thickness scope of p-type gallium aluminium nitrogen layer is 1 to 10nm.
Embodiment
Embodiment 1
Below in conjunction with accompanying drawing, the present invention is further illustrated by embodiment.
Be illustrated in figure 1 as the end view with light-emitting diode of p-type aluminum gallium nitride-gallium nitride superlattice structure electronic barrier layer disclosed in this invention.
Its epitaxial layer structure comprises from bottom to up successively: graphical sapphire substrate (101), gallium nitride resilient coating (102), non-doped gallium nitride layer (103), the N-shaped gallium nitride layer (104) of silicon doping, the current-diffusion layer (106) that the N-shaped indium gallium nitrogen of silicon doping and gallium nitride form, indium gallium nitrogen-gallium nitride Multiple Quantum Well active illuminating layer (107), the electronic barrier layer (108) that the p-type aluminum gallium nitride that magnesium mixes-gallium nitride superlattice structure forms, the p-type gallium nitride layer (109) that magnesium mixes, transparency conducting layer (110) and N-shaped electrode (105) and p-type electrode (111).
Wherein the MOCVD growing technology is adopted in the epitaxial growth of light-emitting diode, and concrete growth step is as follows:
(1) (0001) crystal orientation graphical sapphire substrate (101) is put into reative cell, in atmosphere of hydrogen, be warming up to 1080 ℃, graphical sapphire substrate was carried out high temperature purification 8 minutes;
(2) be cooled to 530 ℃, the gallium nitride resilient coating (102) of growth 20nm thickness;
(3) be warming up to 1050 ℃, the non-doped gallium nitride layer (103) of the 3.0 μ m thickness of growing;
(4) adjust temperature to 1045 ℃, the silicon doping N-shaped gallium nitride layer (104) of the 3.0 μ m thickness of growing;
(5) be cooled to 830 ℃, the current-diffusion layer (106) that the silicon doping N-shaped indium gallium nitrogen of growth 100nm gross thickness and gallium nitride form;
(6) adjust temperature to 730 ℃ and 830 ℃, the indium gallium nitrogen (730 ℃, thickness is 3nm) in 6 cycles of growing-gallium nitride (830 ℃, thickness is 11nm) Multiple Quantum Well active illuminating layer (107);
(7) be warming up to 930 ℃, the magnesium doped p type aluminum gallium nitride (al composition is 0.13) in 8 cycles of growth-gallium nitride superlattice structure electronic barrier layer (108);
(8) maintain the temperature at 930 ℃, the p-type gallium nitride ohmic contact layer (109) that the magnesium of growth 200nm thickness mixes;
(9) be cooled to room temperature, finish growth course.
The difference of epitaxially grown five light-emitting diode samples only is the thickness of the middle p-type gallium aluminium nitrogen layer of electronic barrier layer (108) that p-type aluminum gallium nitride-gallium nitride superlattice structure forms, be respectively 1nm, 4nm, 5nm, 9nm and 10nm, and the thickness of p-type gallium nitride layer is 1nm in the superlattice.
Figure 2 shows that the ESD yield of five gallium nitride LED chips, and forward voltage V under the 20mA operating current
fGraph of a relation with p-type aluminum gallium nitride layer thickness variation in p-type aluminum gallium nitride-gallium nitride superlattice structure.Wherein, light-emitting diode chip for backlight unit is of a size of 12 * 28mil
2, the repetition period number of p-type aluminum gallium nitride-gallium nitride superlattice structure is 8, and p-type gallium nitride layer thickness keeps 1nm constant in the superlattice.When the thickness of p-type aluminum gallium nitride and gallium nitride layer was respectively 9nm and 1nm, the ESD yield under the 2000V reverse voltage was 97.80%, V as shown in Figure 2
fBe 3.15V.
Fig. 3 is that the luminous power LOP of five gallium nitride LED chips is with the graph of a relation of p-type aluminum gallium nitride layer thickness variation in p-type aluminum gallium nitride-gallium nitride superlattice structure.Wherein, light-emitting diode chip for backlight unit is of a size of 12 * 28mil
2, the repetition period number of p-type aluminum gallium nitride-gallium nitride superlattice structure is 8, and p-type gallium nitride layer thickness keeps 1nm constant in the superlattice.When the thickness of p-type aluminum gallium nitride and gallium nitride layer was respectively 9nm and 1nm, optical output power LOP had maximum 70.5mW as shown in Figure 3.
Consider Fig. 2 and experimental result shown in Figure 3, we are not difficult to draw: when the thickness of the p-type aluminum gallium nitride in the electronic barrier layer and gallium nitride layer is respectively 9nm and 1nm, gallium nitride based light emitting diode has minimum forward operating voltage and maximum optical output power when having 97% above ESD yield.
The above only is better embodiment of the present invention; protection scope of the present invention is not limited with structure and the growth pattern of enumerating in above-described embodiment; as long as the equivalence that those of ordinary skills do according to disclosed content is modified or changed, all should include in the protection range of putting down in writing in claims.
Claims (4)
1. gallium nitride based light emitting diode, its epitaxial layer structure comprises from bottom to up successively: Sapphire Substrate (101), gallium nitride resilient coating (102), non-doped gallium nitride layer (103), the N-shaped gallium nitride layer (104) of silicon doping, the current-diffusion layer (106) that the N-shaped indium gallium nitrogen of silicon doping and gallium nitride form, indium gallium nitrogen-gallium nitride Multiple Quantum Well active illuminating layer (107), the p-type gallium nitride layer (109) that magnesium mixes, transparency conducting layer (110) and N-shaped electrode (105) and p-type electrode (111) is characterized in that: have between the p-type gallium nitride layer (109) that described indium gallium nitrogen-gallium nitride Multiple Quantum Well active illuminating layer (107) and described magnesium mix through optimizing, the electronic barrier layer (108) that the p-type aluminum gallium nitride that magnesium mixes-gallium nitride superlattice form.
2. the preparation method of a gallium nitride based light emitting diode as claimed in claim 1, it adopts the growth of metal-organic chemical vapor deposition equipment MOCVD epitaxial growth method, and its concrete steps are as follows:
(1) Sapphire Substrate (101) in (0001) crystal orientation is put into reative cell, in atmosphere of hydrogen, be warming up to 1000 to 1100 ℃, graphical sapphire substrate was carried out high temperature purification 5 to 10 minutes;
(2) be cooled to 500 to 600 ℃, at the gallium nitride resilient coating (102) of described Sapphire Substrate (101) growth 20 to 30 nm thickness;
(3) be warming up to 1000 to 1100 ℃, in the non-doped gallium nitride layer (103) of described gallium nitride resilient coating (102) growth 1.0 to 3.0 μ m thickness;
(4) adjust temperature to 1000 to 1050 ℃, at the silicon doping N-shaped gallium nitride layer (104) of described non-doped gallium nitride layer (103) growth 2.0 to 3.0 μ m thickness;
(5) be cooled to 750 to 850 ℃, at the silicon doping N-shaped indium gallium nitrogen of described silicon doping N-shaped gallium nitride layer (104) growth 50 to 100 nm thickness and the current-diffusion layer (106) of gallium nitride composition;
(6) adjust temperature to 700 to 900 ℃, at described silicon doping N-shaped indium gallium nitrogen-gallium nitride current-diffusion layer (106) the indium gallium nitrogen in 5 to 15 cycles-gallium nitride Multiple Quantum Well active illuminating layer (107) of growing;
(7) be warming up to 900 to 1000 ℃, the p-type aluminum gallium nitride that the magnesium that is 50 to 150 nm in the growth of described indium gallium nitrogen-gallium nitride Multiple Quantum Well active illuminating layer (107) 4 to 12 cycles, gross thickness mixes-gallium nitride superlattice structure electronic barrier layer (108);
(8) keeping temperature is 900 to 1000 ℃, the p-type gallium nitride ohmic contact layer (109) of the magnesium doping of the p-type aluminum gallium nitride that mixes at described magnesium-gallium nitride superlattice structure electronic barrier layer (108) growth 150 to 300 nm thickness;
(9) be cooled to room temperature, finish growth course.
3. gallium nitride based light emitting diode according to claim 2, wherein the al composition scope of p-type aluminum gallium nitride is 0.1 to 0.3 in the electronic barrier layer (108) that the p-type aluminum gallium nitride-the gallium nitride superlattice structure forms that mixes of the described magnesium of step (7).
4. gallium nitride based light emitting diode according to claim 3, the growth cycle number of the electronic barrier layer (108) that the p-type aluminum gallium nitride that wherein mixes when magnesium-gallium nitride superlattice structure forms is 8, and when the thickness of p-type aluminum gallium nitride and gallium nitride layer is respectively 9 nm and 1 nm, adopt the combination property of the prepared light-emitting diode of the electronic barrier layer of this kind structure best.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103996769A (en) * | 2014-06-06 | 2014-08-20 | 湘能华磊光电股份有限公司 | LED epitaxial layer structure, growing method of LED epitaxial layer structure and LED chip with the LED epitaxial layer structure |
| CN105977356A (en) * | 2016-05-17 | 2016-09-28 | 东南大学 | UV light emitting diode with compound electronic barrier layer structure |
| CN106299038A (en) * | 2015-06-04 | 2017-01-04 | 东莞市中镓半导体科技有限公司 | A kind of method preparing the p-type AlGaN/AlInGaN electronic barrier layer near ultraviolet LED with doping content and Al component step variation |
| CN107919417A (en) * | 2016-10-09 | 2018-04-17 | 比亚迪股份有限公司 | Light emitting diode and preparation method thereof |
| CN108281519A (en) * | 2018-01-30 | 2018-07-13 | 华灿光电(苏州）有限公司 | A kind of LED epitaxial slice and its manufacturing method |
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| CN109004074A (en) * | 2018-08-09 | 2018-12-14 | 聚灿光电科技股份有限公司 | LED epitaxial structure and preparation method thereof |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101217175A (en) * | 2008-01-03 | 2008-07-09 | 南京大学 | A structure of semiconductor luminous device with wide spectrum photo-emission function |
| CN102280547A (en) * | 2011-08-31 | 2011-12-14 | 厦门大学 | GaN semiconductor luminotron with P-type active region |
-
2013
- 2013-06-09 CN CN201310232613.3A patent/CN103311394B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101217175A (en) * | 2008-01-03 | 2008-07-09 | 南京大学 | A structure of semiconductor luminous device with wide spectrum photo-emission function |
| CN102280547A (en) * | 2011-08-31 | 2011-12-14 | 厦门大学 | GaN semiconductor luminotron with P-type active region |
Non-Patent Citations (2)
| Title |
|---|
| J. K. SHEU等: "Enhanced Output Power in an InGaN–GaN Multiquantum-Well Light-Emitting Diode With an InGaN Current-Spreading Layer", 《IEEE PHOTONICS TECHNOLOGY LETTERS》 * |
| 龚长春等: "The influence of AlGaN/GaN superlattices as electron blocking layers on the performance of blue InGaN light-emitting diodes", 《CHIN. PHYS. B》 * |
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| CN103996769B (en) * | 2014-06-06 | 2017-07-07 | 湘能华磊光电股份有限公司 | LED epitaxial layer structures, growing method and the LED chip with the structure |
| CN106299038A (en) * | 2015-06-04 | 2017-01-04 | 东莞市中镓半导体科技有限公司 | A kind of method preparing the p-type AlGaN/AlInGaN electronic barrier layer near ultraviolet LED with doping content and Al component step variation |
| CN105977356A (en) * | 2016-05-17 | 2016-09-28 | 东南大学 | UV light emitting diode with compound electronic barrier layer structure |
| CN105977356B (en) * | 2016-05-17 | 2019-02-05 | 东南大学 | A kind of UV LED with composite electron barrier layer structure |
| CN107919417A (en) * | 2016-10-09 | 2018-04-17 | 比亚迪股份有限公司 | Light emitting diode and preparation method thereof |
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