CN109920884A - LED epitaxial slice and its growing method - Google Patents
LED epitaxial slice and its growing method Download PDFInfo
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Abstract
The invention discloses a kind of growing methods of LED epitaxial slice, belong to technical field of semiconductors.The LED epitaxial slice includes substrate, buffer layer, n type semiconductor layer, active layer, p type semiconductor layer and contact layer, the buffer layer, the n type semiconductor layer, the active layer, the p type semiconductor layer and the contact layer stack gradually over the substrate, the contact layer includes the multiple composite constructions stacked gradually, each composite construction includes the first sublayer stacked gradually, second sublayer and third sublayer, the material of first sublayer uses magnesium-doped gallium nitride, the material of second sublayer is using the gallium nitride to undope, the material of the third sublayer is using magnesium-doped and indium gallium nitride.The luminous efficiency of LED entirety can be improved in the present invention.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of LED epitaxial slice and its growing method.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is that one kind can be converted to electric energy
The semiconductor diode of luminous energy.New Solid lighting source as one kind efficiently, environmentally friendly, green, LED is by extensive rapidly
It applies in fields such as traffic lights, automobile interior exterior lamp, landscape light in city, cell phone back light sources on ground.The core component of LED is core
Piece, the luminous efficiency for improving chip is the target constantly pursued in LED application process.
Chip includes epitaxial wafer and the electrode that extension on piece is arranged in.Existing LED epitaxial wafer includes substrate, buffer layer, N
Type semiconductor layer, active layer and p type semiconductor layer, buffer layer, n type semiconductor layer, active layer and p type semiconductor layer stack gradually
On substrate.Substrate is for providing the surface of epitaxial growth, and buffer layer for providing the nuclearing centre of epitaxial growth, partly lead by N-type
Body layer is for providing the electronics of recombination luminescence, and p type semiconductor layer is for providing the hole of recombination luminescence, and active layer is for carrying out electricity
The recombination luminescence of son and hole.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
In order to in chip technology electrode or transparency conducting layer form good Ohmic contact, it will usually in p-type half
Contact layer is set in conductor layer.The material of contact layer is using the gallium nitride of magnesium-doped and indium, and magnesium and indium are mixed in contact layer
Miscellaneous concentration is higher.The doping concentration of magnesium is very high, in addition activator of the indium as magnesium, so that can produce more sky in contact layer
Cave is conducive to electric current injection, improves LED luminous efficiency.But the doping concentration of indium is higher while can also absorb active layer sending
Light, cause the luminous efficiency of LED to reduce.
Summary of the invention
The embodiment of the invention provides a kind of LED epitaxial slice and its growing methods, are able to solve the prior art
The luminous efficiency of LED need the problem of being improved.The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of LED epitaxial slice, the LED epitaxial slice packets
Include substrate, buffer layer, n type semiconductor layer, active layer, p type semiconductor layer and contact layer, the buffer layer, the N-type semiconductor
Layer, the active layer, the p type semiconductor layer and the contact layer stack gradually over the substrate, and the contact layer includes
The multiple composite constructions stacked gradually, each composite construction include the first sublayer, the second sublayer and third stacked gradually
Sublayer, the material of first sublayer use magnesium-doped gallium nitride, and the material of second sublayer is using the nitridation to undope
Gallium, the material of the third sublayer is using magnesium-doped and indium gallium nitride.
Optionally, the thickness of first sublayer is greater than the thickness of second sublayer, and the thickness of second sublayer is big
In the thickness of the third sublayer.
Further, the difference between the thickness of first sublayer and the thickness of second sublayer is equal to described second
Difference between the thickness of sublayer and the thickness of the third sublayer.
Further, the doping concentration of magnesium is 1.5 of the doping concentration of magnesium in first sublayer in the third sublayer
Times~5 times.
Optionally, the doping concentration of magnesium is gradually reduced along the stacking direction of the contact layer in first sublayer, described
The doping concentration of magnesium is gradually reduced along the stacking direction of the contact layer in third sublayer.
Further, the reduction ratio of the doping concentration of magnesium is described equal to two neighboring in two neighboring first sublayer
The reduction ratio of the doping concentration of magnesium in third sublayer.
Further, the doping concentration of indium is gradually increased along the stacking direction of the contact layer in the third sublayer.
Further, the scaling up of the doping concentration of indium is mixed with magnesium in the third sublayer in the third sublayer
The reduction ratio of miscellaneous concentration is inversely proportional.
Further, the thickness of the composite construction is gradually reduced along the stacking direction of the contact layer.
On the other hand, the embodiment of the invention provides a kind of growing method of LED epitaxial slice, the growth sides
Method includes:
One substrate is provided；
Successively grown buffer layer, n type semiconductor layer, active layer, p type semiconductor layer and contact layer over the substrate；
Wherein, the contact layer includes the multiple composite constructions stacked gradually, and each composite construction includes successively layer
Folded the first sublayer, the second sublayer and third sublayer, the material of first sublayer use magnesium-doped gallium nitride, and described second
The material of sublayer is using the gallium nitride to undope, and the material of the third sublayer is using magnesium-doped and indium gallium nitride.
Technical solution provided in an embodiment of the present invention has the benefit that
Contact layer is formed by using multiple composite constructions being made of the first sublayer, the second sublayer and third sublayer, is connect
Contact layer is superlattice structure, can discharge the stress of internal crystal framework mismatch generation, is conducive to the crystal matter for improving epitaxial wafer entirety
Amount.The material of first sublayer uses magnesium-doped gallium nitride, and on the one hand the Lattice Matching between p type semiconductor layer is preferable, separately
On the one hand hole can be provided, is conducive to the injection of electric current；The material of second sublayer uses undoped gallium nitride, crystal quality
Preferably, be conducive to the crystal quality and perfection of lattice of contact layer entirety.The first sublayer and the second sublayer can be reduced and be connect simultaneously
The problem of whole indium content in contact layer, improvement indium extinction.Third sublayer can be used as using magnesium-doped and indium gallium nitride, indium
The activator of magnesium generates a large amount of holes, be conducive to in chip technology electrode or transparency conducting layer form good ohm
Contact.In conclusion the case where injection and contact layer extinction of the crystal quality, electric current of epitaxial wafer makes moderate progress, LED is whole
The available raising of the luminous efficiency of body.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of contact layer provided in an embodiment of the present invention；
Fig. 3 is a kind of flow chart of the growing method of LED epitaxial slice provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of LED epitaxial slices.Fig. 1 is a kind of hair provided in an embodiment of the present invention
The structural schematic diagram of optical diode epitaxial wafer.Referring to Fig. 1, which includes substrate 1, buffer layer 2, N-type half
Conductor layer 3, active layer 4, p type semiconductor layer 5 and contact layer 6, buffer layer 2, n type semiconductor layer 3, active layer 4, P-type semiconductor
Layer 5 and contact layer 6 are sequentially laminated on substrate 1.
Fig. 2 is the structural schematic diagram of contact layer provided in an embodiment of the present invention.Referring to fig. 2, in the present embodiment, contact layer
6 include the multiple composite constructions 60 stacked gradually, and each composite construction includes the first sublayer 61 stacked gradually, the second sublayer 62
With third sublayer 63.The material of first sublayer 61 uses magnesium-doped gallium nitride, what the material use of the second sublayer 62 undoped
Gallium nitride, the material of third sublayer 63 is using magnesium-doped and indium gallium nitride.
The embodiment of the present invention is configured by using multiple composite junctions being made of the first sublayer, the second sublayer and third sublayer
At contact layer, contact layer is superlattice structure, can discharge the stress of internal crystal framework mismatch generation, and it is whole to be conducive to raising epitaxial wafer
The crystal quality of body.The material of first sublayer uses magnesium-doped gallium nitride, on the one hand the lattice between p type semiconductor layer
With preferable, on the other hand hole can be provided, the injection of electric current is conducive to；The material of second sublayer uses undoped nitridation
Gallium, crystal quality is preferable, is conducive to the crystal quality and perfection of lattice of contact layer entirety.First sublayer and the second sublayer simultaneously
The problem of indium content whole in contact layer can be reduced, improve indium extinction.Third sublayer uses magnesium-doped and indium gallium nitride,
Indium can be used as the activator of magnesium, generate a large amount of holes, be conducive to in chip technology electrode or transparency conducting layer formed
Good Ohmic contact.In conclusion the case where injection and contact layer extinction of the crystal quality, electric current of epitaxial wafer, is
Improve, the available raising of luminous efficiency of LED entirety.
Optionally, the thickness of the first sublayer 61 can be greater than the thickness of the second sublayer 62, and the thickness of the second sublayer 62 can be with
Greater than the thickness of third sublayer 63.The thickness of first sublayer is maximum, is conducive to form preferable lattice between p type semiconductor layer
Matching improves the crystal quality of epitaxial wafer entirety；The thickness of third sublayer is minimum simultaneously, help to obtain ultra-thin potential barrier, ultra-thin
For potential barrier to the unobstructed ability of carrier, carrier can pass freely through potential barrier, form very big tunnel current so that contact layer with
Electrode or transparency conducting layer in chip technology form good Ohmic contact.
Further, the difference between the thickness of the first sublayer 61 and the thickness of the second sublayer 62 can be equal to the second son
Difference between the thickness of layer 62 and the thickness of third sublayer 63.The difference of thickness is identical between each sublayer, and variation is more flat
, it is possible to prevente effectively from adverse effect brought by acutely changing.
Illustratively, the thickness of the first sublayer 61 can be 2nm~4nm, such as 3nm, realize that effect is good.
Illustratively, the thickness of the second sublayer 62 can be 1nm~3nm, such as 2nm, realize that effect is good.
Illustratively, the thickness of third sublayer 63 can be 0.5nm~1.5nm, such as 1nm, realize that effect is good.
Further, the doping concentration of magnesium can be 1.5 of the doping concentration of magnesium in the first sublayer 61 in third sublayer 63
Times~5 times, such as 3 times.The doping concentration of magnesium is higher in third sublayer, help to obtain ultra-thin potential barrier, ultra-thin potential barrier is to carrier
Unobstructed ability, carrier can pass freely through potential barrier, form very big tunnel current, so that in contact layer and chip technology
Electrode or transparency conducting layer form good Ohmic contact；Simultaneously in the first sublayer and third sublayer the doping concentration of magnesium one
Determine in range, crystal quality that is too big and influencing contact layer entirety can be differed to avoid the two.
Illustratively, the doping concentration of magnesium can be 1*10 in the first sublayer 6119/cm3~1*1020/cm3, such as 5*1019/
cm3；The doping concentration of magnesium can be 5*10 in third sublayer 6319/cm3~6*1020/cm3, such as 1020/cm3, realize that effect is good.
Optionally, the doping concentration of magnesium can be gradually reduced along the stacking direction of contact layer 6 in the first sublayer 61, third
The doping concentration of magnesium can be gradually reduced along the stacking direction of contact layer 6 in layer 63.In view of the self compensation efficiency of magnesium, subsequent life
The doping concentration of magnesium is too high in long composite construction can not only improve number of cavities, can influence outer because impurity is more instead
Prolong the crystal quality of piece entirety.Therefore, the doping concentration of magnesium gradually decreases in composite construction, can't cause shadow to number of cavities
It rings, the crystal quality of epitaxial wafer can be improved instead, be conducive to the promotion of LED luminous efficiency.
Further, the reduction ratio of the doping concentration of magnesium can be equal to two neighboring the in two neighboring first sublayer 61
The reduction ratio of the doping concentration of magnesium in three sublayers 63.First sublayer and third sublayer reduce the doping of magnesium using identical ratio
Concentration is conducive to even variation inside contact layer, effectively avoids acutely changing brought adverse effect.
Further, the doping concentration of indium can be gradually increased along the stacking direction of contact layer 6 in third sublayer 63.Indium can
Using the activator as magnesium, as the doping concentration of magnesium is gradually reduced in third sublayer, the doping concentration of indium in third sublayer
It is gradually increased accordingly, it is possible to prevente effectively from number of cavities is reduced in third sublayer；Simultaneously close to third of p type semiconductor layer
The doping concentration of indium is lower in layer, is on the one hand conducive to form preferable Lattice Matching with p type semiconductor layer, on the other hand can be with
Reduce absorption of the indium to light；And the doping concentration far from indium in p type semiconductor layer is higher, help to obtain ultra-thin potential barrier, it is ultra-thin
For potential barrier to the unobstructed ability of carrier, carrier can pass freely through potential barrier, very big tunnel current be formed, thus with chip work
Electrode or transparency conducting layer in skill form good Ohmic contact.
Further, the scaling up of the doping concentration of indium can be mixed with magnesium in third sublayer 63 in third sublayer 63
The reduction ratio of miscellaneous concentration is inversely proportional.
Illustratively, the doping concentration of indium can be 5*10 in third sublayer 6319/cm3~5*1020/cm3, such as 1020/
cm3, realize that effect is good.
Further, the thickness of composite construction 60 can be gradually reduced along the stacking direction of contact layer 6.With third sublayer
The doping concentration of middle indium can be gradually increased cooperation along the stacking direction of contact layer, on the one hand reduce absorption of the indium to light, another
Aspect help to obtain ultra-thin potential barrier, and for ultra-thin potential barrier to the unobstructed ability of carrier, carrier can pass freely through potential barrier, is formed
Very big tunnel current, thus in chip technology electrode or transparency conducting layer form good Ohmic contact.
Optionally, the quantity of multiple composite constructions 60 can be 3~20, can be released effectively using superlattice structure
The stress that lattice mismatch generates and extends also is avoided that growth time is too long and reduces the crystal quality of epitaxial wafer.
Illustratively, the quantity of multiple composite constructions 60 can be 3~10, such as 6, realize that effect is good.
Optionally, the material of substrate 1 can use sapphire (main material is aluminum oxide), if crystal orientation is [0001]
Sapphire.The material of buffer layer 2 can use undoped gallium nitride or aluminium nitride.The material of n type semiconductor layer 3 can be with
The gallium nitride adulterated using n-type doping (such as silicon).Active layer 4 may include that multiple Quantum Well and multiple quantum are built, multiple quantum
Trap and multiple quantum build alternately laminated setting；The material of Quantum Well can use InGaN (InGaN), such as InxGa1-xN, 0 <
X < 1, the material that quantum is built can use gallium nitride.The material of p type semiconductor layer 5 can be using the nitridation of p-type doping (such as magnesium)
Gallium.
Further, the thickness of buffer layer 2 can be 15nm~30nm, preferably 25nm.The thickness of n type semiconductor layer 3
It can be 2 μm~3 μm, preferably 2.5 μm；The doping concentration of N type dopant can be 10 in n type semiconductor layer 318cm-3~
1019cm-3, preferably 5*1018cm-3.The thickness of Quantum Well can be 2nm~3nm, preferably 2.5nm；The thickness that quantum is built can
Think 8nm~11nm, preferably 9.5nm；The quantity of Quantum Well is identical as the quantity that quantum is built, and the quantity that quantum is built can be 11
It is a~13, preferably 12；The thickness of active layer 4 can be 130nm~160nm, preferably 145nm.P type semiconductor layer 5
Thickness can be 50nm~80nm, preferably 65nm；The doping concentration of P-type dopant can be 10 in p type semiconductor layer 618/
cm3~1020/cm3, preferably 1019/cm3。
Optionally, as shown in Figure 1, the LED epitaxial slice can also include undoped gallium nitride layer 7, undoped with nitrogen
Change gallium layer 7 to be arranged between buffer layer 2 and n type semiconductor layer 3, be generated with alleviating lattice mismatch between substrate material and gallium nitride
Stress and defect, provide crystal quality preferable growing surface for epitaxial wafer main structure.
In specific implementation, buffer layer 2 is the gallium nitride of the layer of low-temperature epitaxy first in patterned substrate, because
This is also referred to as low temperature buffer layer.The longitudinal growth for carrying out gallium nitride in low temperature buffer layer again, will form multiple mutually independent three
Island structure is tieed up, referred to as three-dimensional nucleating layer；Then it is carried out between each three-dimensional island structure on all three-dimensional island structures
The cross growth of gallium nitride forms two-dimension plane structure, referred to as two-dimentional retrieving layer；The finally high growth temperature one on two-dimensional growth layer
The thicker gallium nitride of layer, referred to as intrinsic gallium nitride layer.By three-dimensional nucleating layer, two-dimentional retrieving layer and intrinsic gallium nitride in the present embodiment
Layer is referred to as undoped gallium nitride layer 7.
Further, the thickness of undoped gallium nitride layer 7 can be 2 μm~3.5 μm, preferably 2.75 μm.
Optionally, as shown in Figure 1, the LED epitaxial slice can also include stress release layer 8, with to sapphire and
The stress that lattice mismatch generates between gallium nitride is discharged, and is improved the crystal quality of active layer, is conducive to electrons and holes and exists
Active layer carries out radiation recombination and shines, and improves the internal quantum efficiency of LED, and then improve the luminous efficiency of LED.
Optionally, as shown in Figure 1, the LED epitaxial slice can also include electronic barrier layer 91, electronic barrier layer
91 are arranged between active layer 4 and p type semiconductor layer 5, carry out non-spoke with hole into p type semiconductor layer to avoid electron transition
It penetrates compound, reduces the luminous efficiency of LED.
Specifically, the material of electronic barrier layer 91 can be using the aluminium gallium nitride alloy (AlGaN) of p-type doping, such as AlyGa1-yN,
0.15 < y < 0.25.
Further, the thickness of electronic barrier layer 91 can be 30nm~50nm, preferably 40nm.
Preferably, as shown in Figure 1, the LED epitaxial slice can also include low temperature P-type layer 92, low temperature P-type layer 92
It is arranged between active layer 4 and electronic barrier layer 91, is caused in active layer to avoid the higher growth temperature of electronic barrier layer
Phosphide atom is precipitated, and influences the luminous efficiency of light emitting diode.
Specifically, the material of low temperature P-type layer 92 can be identical as the material of p type semiconductor layer 5.In the present embodiment,
The material of low temperature P-type layer 92 can be the gallium nitride of p-type doping.
Further, the thickness of low temperature P-type layer 92 can be 10nm~50nm, preferably 30nm；P in low temperature P-type layer 92
The doping concentration of type dopant can be 1018/cm3~1020/cm3, preferably 1019/cm3。
The embodiment of the invention provides a kind of growing method of LED epitaxial slice, it is suitable for growing shown in FIG. 1
LED epitaxial slice.Fig. 3 is a kind of process of the growing method of LED epitaxial slice provided in an embodiment of the present invention
Figure.Referring to Fig. 3, which includes:
Step 201: a substrate is provided.
Optionally, which may include:
Controlled at 1000 DEG C~1100 DEG C (preferably 1050 DEG C), pressure be 200torr~500torr (preferably
350torr), 5 minutes~6 minutes (preferably 5.5 minutes) annealings are carried out to substrate in hydrogen atmosphere.
The surface for cleaning substrate through the above steps avoids being conducive to the life for improving epitaxial wafer in impurity incorporation epitaxial wafer
Long quality.
Step 202: successively grown buffer layer, n type semiconductor layer, active layer, p type semiconductor layer and contact on substrate
Layer.
In the present embodiment, contact layer includes the multiple composite constructions stacked gradually, and each composite construction includes successively layer
The material of folded the first sublayer, the second sublayer and third sublayer, the first sublayer uses magnesium-doped gallium nitride, the material of the second sublayer
Material is using the gallium nitride to undope, and the material of third sublayer is using magnesium-doped and indium gallium nitride.
Optionally, which may include:
The first step, controlled at 530 DEG C~560 DEG C (preferably 545 DEG C), pressure is that 200torr~500torr is (excellent
It is selected as 350torr), grown buffer layer on substrate；
Second step, controlled at 1000 DEG C~1100 DEG C (preferably 1050 DEG C), pressure is 100torr~500torr
(preferably 300torr), grows n type semiconductor layer on the buffer layer；
Third step grows active layer on n type semiconductor layer；Wherein, the growth temperature of Quantum Well is 760 DEG C~780 DEG C
(preferably 770 DEG C), pressure 200torr；The growth temperature that quantum is built is 860 DEG C~890 DEG C (preferably 875 DEG C), pressure
For 200torr；
4th step, controlled at 940 DEG C~980 DEG C (preferably 960 DEG C), pressure is that 200torr~600torr is (excellent
It is selected as 400torr), the growing P-type semiconductor layer on active layer；
5th step, controlled at 850 DEG C~1050 DEG C (preferably 950 DEG C), pressure is that 100torr~300torr is (excellent
It is selected as 200torr), contact layer is grown on p type semiconductor layer.
Optionally, before third step, which can also include:
Undoped gallium nitride layer is grown on the buffer layer.
Correspondingly, n type semiconductor layer is grown on undoped gallium nitride layer.
Specifically, undoped gallium nitride layer is grown on the buffer layer, may include:
Controlled at 1000 DEG C~1100 DEG C (preferably 1050 DEG C), pressure be 200torr~600torr (preferably
400torr), undoped gallium nitride layer is grown on the buffer layer.
Optionally, before the 4th step, which can also include:
The growth stress releasing layer on n type semiconductor layer.
Correspondingly, active layer is grown on stress release layer.
Optionally, before the 5th step, which can also include:
Electronic barrier layer is grown on active layer.
Correspondingly, p type semiconductor layer is grown on electronic barrier layer.
Specifically, electronic barrier layer is grown on active layer, may include:
Controlled at 930 DEG C~970 DEG C (preferably 950 DEG C), pressure 100torr grows electronics on active layer
Barrier layer.
Preferably, before growing electronic barrier layer on active layer, which can also include:
The growing low temperature P-type layer on active layer.
Correspondingly, electronic barrier layer is grown in low temperature P-type layer.
Specifically, the growing low temperature P-type layer on active layer may include:
Controlled at 600 DEG C~850 DEG C (preferably 750 DEG C), pressure be 100torr~600torr (preferably
300torr), the growing low temperature P-type layer on active layer.
It should be noted that after above-mentioned epitaxial growth terminates, can first by temperature be reduced to 650 DEG C~850 DEG C (preferably
It is 750 DEG C), the annealing of 5 minutes~15 minutes (preferably 10 minutes) is carried out to epitaxial wafer in nitrogen atmosphere, then again
The temperature of epitaxial wafer is reduced to room temperature.
Control temperature, pressure each mean temperature, pressure in the reaction chamber of control growth epitaxial wafer, and specially metal is organic
Compound chemical gaseous phase deposition (English: Metal-organic Chemical Vapor Deposition, referred to as: MOCVD) set
Standby reaction chamber, such as Veeco K465i MOCVD or Veeco C4MOCVD.With hydrogen or nitrogen or hydrogen when realization
The mixed gas of gas and nitrogen is as carrier gas, trimethyl gallium or triethyl-gallium as gallium source, and high-purity ammonia is as nitrogen source, trimethyl
Indium is as indium source, and trimethyl aluminium is as silicon source, and silane is as silicon source, and two luxuriant magnesium are as magnesium source.
By changing the individual parameters (such as thickness difference of the first sublayer, the second sublayer and third sublayer) of contact layer, guarantee
Contact layer other parameters (in such as the first sublayer in the doping concentration, third sublayer of magnesium magnesium and indium doping concentration, composite construction
Quantity etc.), other layers of all parameters are (such as silicon in the thickness of buffer layer, the thickness of n type semiconductor layer, n type semiconductor layer
Doping concentration etc.), form the sample of a variety of LED epitaxial slices.By these samples and using luminous the two of existing contact layer
Pole pipe epitaxial wafer is made chip and is tested, and test result is as follows shown in table one:
Table one
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of LED epitaxial slice, the LED epitaxial slice includes substrate, buffer layer, n type semiconductor layer, has
Active layer, p type semiconductor layer and contact layer, the buffer layer, the n type semiconductor layer, the active layer, the P-type semiconductor
Layer and the contact layer stack gradually over the substrate, which is characterized in that the contact layer include stack gradually it is multiple multiple
Structure is closed, each composite construction includes the first sublayer, the second sublayer and third sublayer stacked gradually, first sublayer
Material use magnesium-doped gallium nitride, the material of second sublayer using the gallium nitride to undope, the third sublayer
Material is using magnesium-doped and indium gallium nitride.
2. LED epitaxial slice according to claim 1, which is characterized in that the thickness of first sublayer is greater than institute
The thickness of the second sublayer is stated, the thickness of second sublayer is greater than the thickness of the third sublayer.
3. LED epitaxial slice according to claim 2, which is characterized in that the thickness of first sublayer with it is described
Difference between the thickness of second sublayer is equal to the difference between the thickness of second sublayer and the thickness of the third sublayer.
4. LED epitaxial slice according to claim 2 or 3, which is characterized in that magnesium mixes in the third sublayer
Miscellaneous concentration is 1.5 times~5 times of the doping concentration of magnesium in first sublayer.
5. described in any item LED epitaxial slices according to claim 1~3, which is characterized in that in first sublayer
The doping concentration of magnesium is gradually reduced along the stacking direction of the contact layer, and the doping concentration of magnesium connects described in the third sublayer
The stacking direction of contact layer is gradually reduced.
6. LED epitaxial slice according to claim 5, which is characterized in that magnesium in two neighboring first sublayer
Doping concentration reduction ratio be equal to the two neighboring third sublayer in magnesium doping concentration reduction ratio.
7. LED epitaxial slice according to claim 5, which is characterized in that the doping of indium is dense in the third sublayer
The stacking direction spent along the contact layer is gradually increased.
8. LED epitaxial slice according to claim 7, which is characterized in that the doping of indium is dense in the third sublayer
The reduction ratio of the doping concentration of magnesium is inversely proportional in the scaling up of degree and the third sublayer.
9. LED epitaxial slice according to claim 7, which is characterized in that the thickness of the composite construction is described in
The stacking direction of contact layer is gradually reduced.
10. a kind of growing method of LED epitaxial slice, which is characterized in that the growing method includes:
One substrate is provided；
Successively grown buffer layer, n type semiconductor layer, active layer, p type semiconductor layer and contact layer over the substrate；
Wherein, the contact layer includes the multiple composite constructions stacked gradually, and each composite construction includes stacking gradually
The material of first sublayer, the second sublayer and third sublayer, first sublayer uses magnesium-doped gallium nitride, second sublayer
Material using the gallium nitride that undopes, the material of the third sublayer is using magnesium-doped and indium gallium nitride.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110635007A (en) * | 2019-09-12 | 2019-12-31 | 佛山市国星半导体技术有限公司 | Antistatic epitaxial structure and preparation method thereof |
| CN111403564A (en) * | 2020-03-31 | 2020-07-10 | 厦门乾照半导体科技有限公司 | Infrared light-emitting diode epitaxial structure, chip and manufacturing method thereof |
| CN113990993A (en) * | 2021-09-01 | 2022-01-28 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer for reducing ohmic contact resistance and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9337391B2 (en) * | 2014-08-11 | 2016-05-10 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device, light emitting device package comprising the same, and lighting device comprising the same |
| CN206364045U (en) * | 2016-07-29 | 2017-07-28 | 华灿光电（浙江）有限公司 | Epitaxial wafer of gallium nitride-based light-emitting diode |
| CN107887485A (en) * | 2017-09-27 | 2018-04-06 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
-
2019
- 2019-01-24 CN CN201910069070.5A patent/CN109920884B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9337391B2 (en) * | 2014-08-11 | 2016-05-10 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device, light emitting device package comprising the same, and lighting device comprising the same |
| CN206364045U (en) * | 2016-07-29 | 2017-07-28 | 华灿光电（浙江）有限公司 | Epitaxial wafer of gallium nitride-based light-emitting diode |
| CN107887485A (en) * | 2017-09-27 | 2018-04-06 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110635007A (en) * | 2019-09-12 | 2019-12-31 | 佛山市国星半导体技术有限公司 | Antistatic epitaxial structure and preparation method thereof |
| CN111403564A (en) * | 2020-03-31 | 2020-07-10 | 厦门乾照半导体科技有限公司 | Infrared light-emitting diode epitaxial structure, chip and manufacturing method thereof |
| CN113990993A (en) * | 2021-09-01 | 2022-01-28 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer for reducing ohmic contact resistance and manufacturing method thereof |
| CN113990993B (en) * | 2021-09-01 | 2023-10-13 | 华灿光电（浙江）有限公司 | Light-emitting diode epitaxial wafer for reducing ohmic contact resistance and manufacturing method thereof |
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