JPH053079A - Organic el element - Google Patents
Organic el elementInfo
- Publication number
- JPH053079A JPH053079A JP17867991A JP17867991A JPH053079A JP H053079 A JPH053079 A JP H053079A JP 17867991 A JP17867991 A JP 17867991A JP 17867991 A JP17867991 A JP 17867991A JP H053079 A JPH053079 A JP H053079A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- organic
- electrode
- transparent
- visual angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 12
- 230000000694 effects Effects 0.000 abstract description 6
- 230000000007 visual effect Effects 0.000 abstract description 4
- 238000005401 electroluminescence Methods 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 230000001419 dependent effect Effects 0.000 abstract 3
- 239000003814 drug Substances 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 238000005488 sandblasting Methods 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 66
- 239000010408 film Substances 0.000 description 15
- 230000005525 hole transport Effects 0.000 description 10
- 238000009826 distribution Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 238000000295 emission spectrum Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 150000002894 organic compounds Chemical class 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910003023 Mg-Al Inorganic materials 0.000 description 2
- 235000001630 Pyrus pyrifolia var culta Nutrition 0.000 description 2
- 240000002609 Pyrus pyrifolia var. culta Species 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical class C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 2
- 150000004866 oxadiazoles Chemical class 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical class C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical class F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- -1 aluminum quinolinol Chemical compound 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000005338 frosted glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、電流の注入による物質
のエレクトロルミネッセンス(以下、ELという)を利
用して、かかる物質を薄膜に形成したEL層を備えたE
L素子に関し、特に発光物質が有機化合物である有機E
L素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention utilizes an electroluminescence (hereinafter, referred to as EL) of a substance by injecting an electric current to form an E layer having a thin film of the substance.
L element, especially organic E whose light-emitting substance is an organic compound
Regarding the L element.
【0002】[0002]
【従来の技術】この種の有機EL素子として、図3に示
すように、金属陰極1と透明陽極2との間に、それぞれ
有機化合物からなり互いに積層された発光体薄膜からな
るEL層3及び正孔輸送層4が配された2層構造のもの
や、図4に示すように、金属陰極1と透明陽極2との間
に互いに積層された有機化合物からなる電子輸送層5、
EL層3及び正孔輸送層4が配された3層構造のものが
知られている。ここで、正孔輸送層4は陽極から正孔を
注入させ易くする機能と電子をブロックする機能とを有
し、電子輸送層5は陰極から電子を注入させ易くする機
能と正孔をブロックする機能とを有している。2. Description of the Related Art As an organic EL device of this kind, as shown in FIG. 3, an EL layer 3 composed of light emitting thin films made of organic compounds and laminated between an organic compound and a transparent cathode 2 is provided. One having a two-layer structure in which the hole transport layer 4 is arranged, or as shown in FIG. 4, an electron transport layer 5 made of an organic compound laminated between the metal cathode 1 and the transparent anode 2,
A three-layer structure in which the EL layer 3 and the hole transport layer 4 are arranged is known. Here, the hole transport layer 4 has a function of facilitating the injection of holes from the anode and a function of blocking electrons, and the electron transport layer 5 has a function of facilitating the injection of electrons from the cathode and block holes. It has the function and.
【0003】例えば金属陰極1には、アルミニウム、マ
グネシウム、インジウム、銀又は各々の合金等の仕事関
数が小さな金属からなり厚さが1000〜5000オン
グストローム程度のものが用い得る。また、例えば陽極
2には、インジウムすず酸化物(以下、ITOという)
等の仕事関数の大きな導電性材料からなり厚さが100
0〜3000オングストローム程度で、又は金で厚さが
800〜1500オングストローム程度のものが用い得
る。For example, the metal cathode 1 may be made of a metal having a small work function such as aluminum, magnesium, indium, silver, or an alloy of each, and having a thickness of about 1000 to 5000 angstrom. Further, for example, in the anode 2, indium tin oxide (hereinafter referred to as ITO) is used.
Made of a conductive material with a large work function such as
A thickness of about 0 to 3000 angstroms or a thickness of gold of about 800 to 1500 angstroms can be used.
【0004】EL層3には、アルミキノリノール錯体す
なわちAlオキシンキレート(以下、Alq3 とい
う)、テトラフェニルブタジエン誘導体等が用いられ得
る。正孔輸送層4にはトリフェニルジアミン誘導体であ
るN,N´−ジフェニル−N,N´−ビス(3メチルフ
ェニル)−1,1´−ビフェニル−4,4´−ジアミン
(以下、TPDという)が好ましく用いられ、更にCT
M(Carrier Transporting Ma
terials)として知られている化合物を単独、も
しくは混合物として用い得る。For the EL layer 3, an aluminum quinolinol complex, that is, an Al oxine chelate (hereinafter referred to as Alq 3 ), a tetraphenyl butadiene derivative or the like can be used. In the hole transport layer 4, N, N′-diphenyl-N, N′-bis (3methylphenyl) -1,1′-biphenyl-4,4′-diamine (hereinafter referred to as TPD) which is a triphenyldiamine derivative. ) Is preferably used, and CT
M (Carrier Transporting Ma)
The compounds known as terials) can be used alone or as a mixture.
【0005】電子輪送層には、例えばオキサジアゾール
誘導体(PBD)等が用いられ得る。これら有機EL素
子において、透明電極2の外側にはガラス基板6が配さ
れており、金属陰極1から注入された電子と透明陽極2
からEL層3へ注入された正孔との再結合によって励起
子が生じ、EL層における正孔輸送層との境界面近傍に
て励起子が放射失活する過程で光を放ち、この光が透明
陽極2及びガラス基板6を介して外部に放出される(特
開昭59−194393号公報及び特開昭63−295
695公報参照)。For the electron transport layer, for example, an oxadiazole derivative (PBD) or the like can be used. In these organic EL devices, a glass substrate 6 is arranged outside the transparent electrode 2 so that electrons injected from the metal cathode 1 and the transparent anode 2
Excitons are generated by recombination with holes injected from the EL layer 3 into the EL layer 3, and the excitons emit light in the process of radiation deactivation near the interface with the hole transport layer in the EL layer. It is emitted to the outside through the transparent anode 2 and the glass substrate 6 (Japanese Patent Laid-Open Nos. 59-194393 and 63-295).
695).
【0006】[0006]
【発明が解決しようとする課題】ところで発明者は、2
層構造の有機EL素子のEL層膜厚、発光スペクトル及
び輝度並びに視角度の研究の結果、輝度にはEL層膜厚
による依存性及び視角度依存性があることを知見した。
すなわち、図5に示すように有機EL素子のガラス基板
6側表面を目視者が見る角度によって発光スペクトル及
び輝度が変化する。By the way, the inventor
As a result of research on the EL layer film thickness, the emission spectrum and the brightness, and the viewing angle of the organic EL device having the layer structure, it was found that the brightness depends on the EL layer film thickness and the viewing angle.
That is, as shown in FIG. 5, the emission spectrum and the brightness change depending on the angle at which the viewer views the surface of the organic EL element on the glass substrate 6 side.
【0007】目視者にとってEL層内の発光源Pの1点
から発した光には、図中の直接基板6へ向かう経路A及
び背面の金属電極1で反射し基板6へ向かう経路Bの2
つの光が含まれる。この2つの経路の光は以下の数式1
に示す光路差L、さらに数式2に示す位相差ηyを保持
しているので、互いに干渉する(両数式中、nはEL層
3の屈折率を、yは発光源Pから金属電極1までの距離
を、θはEL層内における表示表面の法線からそれる視
角を、λは波長をそれぞれ示す。以下、同じ)。For a viewer, the light emitted from one point of the light emitting source P in the EL layer is divided into a path A directly directed to the substrate 6 in the figure and a path B reflected by the metal electrode 1 on the back surface to the substrate 6.
Includes two lights. The light of these two paths is expressed by the following Equation 1
Since the optical path difference L shown in Equation 1 and the phase difference ηy shown in Equation 2 are held, they interfere with each other (in both equations, n is the refractive index of the EL layer 3 and y is the light source P to the metal electrode 1). A distance, θ is a viewing angle deviating from a normal to the display surface in the EL layer, and λ is a wavelength. The same applies hereinafter.
【0008】[0008]
【数1】 [Equation 1]
【0009】[0009]
【数2】 よって、干渉効果としてその強度I(y、λ)は数式3
の如く表せる。[Equation 2] Therefore, as an interference effect, the intensity I (y, λ) is
Can be expressed as
【0010】[0010]
【数3】 [Equation 3]
【0011】EL層中で発光強度f(y)分布は、図6
に示すように正孔輸送層4の境界面においては強く金属
電極1に向かうほど減少し、膜厚に関する指数関数分布
として数式4の如く表せ、EL層全体としては数式5の
如く正規化できる(両数式中、dは発光源から金属電極
までの距離を、εは発光強度分布パラメータを、kは定
数をそれぞれ示す。以下、同じ)。The emission intensity f (y) distribution in the EL layer is shown in FIG.
As shown in, the boundary surface of the hole transport layer 4 strongly decreases toward the metal electrode 1, and can be expressed as an exponential function distribution with respect to the film thickness as in Expression 4, and the EL layer as a whole can be normalized as in Expression 5 ( In both equations, d is the distance from the light emitting source to the metal electrode, ε is the emission intensity distribution parameter, and k is a constant.
【0012】[0012]
【数4】 [Equation 4]
【0013】[0013]
【数5】 [Equation 5]
【0014】発光源自体の発光スペクトルの強度分布F
(λ)は発光体特有の波長λの関数として表せる。よっ
て、目視者によって実際に観察されるEL素子の発光強
度T(λ,θ,d)は数式6のように表せる。The intensity distribution F of the emission spectrum of the emission source itself
(Λ) can be expressed as a function of the wavelength λ peculiar to the light emitter. Therefore, the light emission intensity T (λ, θ, d) of the EL element that is actually observed by the viewer can be expressed by Expression 6.
【0015】[0015]
【数6】 [Equation 6]
【0016】ここで、EL素子の発光強度T(λ,θ,
d)を確認するために、膜厚dを6000オングストロ
ームとしたAlq3 からなるEL層を含む有機EL素子
を作成し、視角θを0゜から75゜まで種々変化させて
その発光強度の試験を行った。図7は、発光波長に対す
る発光強度分布を示す。かかる発光強度分布と上記数式
6の発光強度T(λ,θ,d)とが略一致することが確
認された。図から明らかなように、目視者にとっては視
角0゜から75゜までEL素子表示面を見る方向によっ
て色彩が順次異なるように見える。Here, the emission intensity T (λ, θ,
In order to confirm d), Alq 3 having a film thickness d of 6000 angstroms is used. An organic EL device including an EL layer made of was prepared, and the emission intensity was tested under various viewing angles θ from 0 ° to 75 °. FIG. 7 shows the emission intensity distribution with respect to the emission wavelength. It was confirmed that the light emission intensity distribution and the light emission intensity T (λ, θ, d) of the above formula 6 are substantially the same. As is apparent from the figure, to the viewer, the colors seem to be sequentially different from the viewing angle of 0 ° to 75 ° depending on the viewing direction of the EL element display surface.
【0017】さらに、実用に沿うように、波長λに対し
て特定値で感応する目視者または光検出器の視感度特性
E(λ)を考慮する。例えば視感度特性E(λ)を正規
分布とすると、かかる感度特性内におけるEL素子の輝
度特性L(d)は、数式7のようにdの関数として表せ
る(Kは定数を示す)。Further, in consideration of practical use, the visual sensitivity characteristic E (λ) of a viewer or a photodetector sensitive to the wavelength λ with a specific value is considered. For example, if the luminosity characteristic E (λ) is a normal distribution, the luminance characteristic L (d) of the EL element within the sensitivity characteristic can be expressed as a function of d as in Expression 7 (K indicates a constant).
【0018】[0018]
【数7】 [Equation 7]
【0019】図8は、Alq3 からなるEL層(θ=
0,n=1.7)についてその膜厚を略0オングストロ
ームから8000オングストロームにわたって変化させ
計算した場合の膜厚に対する輝度/電流特性の膜厚輝度
減衰(特性)を示し、この減衰曲線が有機EL素子にお
ける輝度の膜厚依存性を示している。FIG. 8 shows Alq 3 EL layer (θ =
(0, n = 1.7), the film thickness / brightness attenuation (characteristic) of the brightness / current characteristics with respect to the film thickness is shown when the film thickness is calculated from about 0 Å to 8000 Å. The film thickness dependence of the brightness in the element is shown.
【0020】以上のことから、有機EL素子は、視角に
より色(発光スペクトル)及び輝度が変化し、また膜厚
のバラツキにより輝度が変化するので、カラー表示を行
うと、見る角度で色及び輝度が変化し、ディスプレイと
して非常に不都合となりその改善が大きな課題となる。From the above, in the organic EL element, the color (emission spectrum) and the luminance change depending on the viewing angle, and the luminance changes due to the variation in the film thickness. Therefore, when color display is performed, the color and the luminance change depending on the viewing angle. Change, and it becomes very inconvenient for a display, and its improvement is a major issue.
【0021】そこで本発明は、このような事情に対処し
てなされたもので輝度、及び発光スペクトルの視角依存
性を低減した有機EL素子を提供することを目的とす
る。The present invention has been made in view of the above circumstances, and an object thereof is to provide an organic EL element in which the viewing angle dependence of luminance and emission spectrum is reduced.
【0022】[0022]
【課題を解決するための手段】本発明は、上記の知見に
基づいて完成されたものであって、透明基板上に透明電
極、有機EL層及び金属電極を順に積層した有機EL素
子において、前記有機EL層の前記金属電極に接する側
の面又は前記金属電極の前記有機EL層に接する側の面
が粗面化されていることを特徴とするものである。The present invention has been completed on the basis of the above findings, and provides an organic EL element in which a transparent electrode, an organic EL layer and a metal electrode are laminated in this order on a transparent substrate. The surface of the organic EL layer that is in contact with the metal electrode or the surface of the metal electrode that is in contact with the organic EL layer is roughened.
【0023】[0023]
【作用】本発明の面発光装置では、たとえばホール輸送
層及び発光層からなる有機EL層にあっては、膜厚によ
り輝度が変化し、また視角により発光スペクトルや輝度
が変化することにより、視角により輝度が低下してしま
うということが本発明者等の実験によって判明した。更
に、このような変化は、干渉モデルによって説明するこ
とができることも判明した。In the surface emitting device of the present invention, for example, in the organic EL layer including the hole transport layer and the light emitting layer, the luminance changes depending on the film thickness, and the emission spectrum and the luminance change depending on the viewing angle. It was found by experiments by the present inventors that the brightness decreases due to the above. Furthermore, it has been found that such changes can be explained by an interference model.
【0024】したがって、有機EL層の金属電極に接す
る側の面又は金属電極の有機EL層に接する側の面を粗
面化することにより、発光層内の発光点からの光の光路
差が多少異なり、干渉効果が平均化されるため、角度依
存性及び膜厚依存性が小さくなる。Therefore, by roughening the surface of the organic EL layer which is in contact with the metal electrode or the surface of the metal electrode which is in contact with the organic EL layer, the optical path difference of the light from the light emitting point in the light emitting layer is somewhat small. Differently, since the interference effect is averaged, the angle dependence and the film thickness dependence are reduced.
【0025】[0025]
【実施例】以下、本発明の実施例の詳細を図面に基づい
て説明する。なお、以下に説明する図において、図3と
共通する部分には同一符号を付し重複する説明を省略す
る。Embodiments of the present invention will be described below in detail with reference to the drawings. In the drawings described below, the same parts as those in FIG. 3 will be assigned the same reference numerals and overlapping explanations will be omitted.
【0026】図1は、本発明の有機EL素子を2層構造
のものに適用した場合の一実施例を示すもので、ガラス
基板6の粗面上にIn2O3やSnO2 等の透明電極2、
有機EL層を構成するトリフェニルジアミン誘導体(T
PD)からなるホール輸送層4及びアルミキノリノーム
錯体(Alq3 )からなる発光層3、及びMg−Al等
からなる金属電極1が順に形成されている。FIG. 1 shows an embodiment in which the organic EL element of the present invention is applied to a two-layer structure. In 2 O 3 and SnO 2 are formed on the rough surface of the glass substrate 6. Transparent electrode 2, etc.
Triphenyldiamine derivative (T
(PD) hole transport layer 4 and aluminum quinolinome complex (Alq 3 ) And a metal electrode 1 made of Mg-Al or the like are sequentially formed.
【0027】図2は、上記の粗面部分を拡大して示すも
ので、その粗面化された面の最大の高さは1μm程度と
され、粗面化された山と山との間隔Lは3μm程度とす
るのが望ましい。そして、上記のように粗面化された有
機EL素子は、次のようにして作成される。FIG. 2 is an enlarged view of the rough surface portion. The maximum height of the roughened surface is about 1 μm, and the interval L between the roughened peaks is L. Is preferably about 3 μm. Then, the organic EL element roughened as described above is prepared as follows.
【0028】まず、たとえばフッソ酸塩等の腐食作用を
有した薬品による腐食処理やサンドブラスト処理等によ
って、ガラス基板6の表面を処理する。このとき粗面化
された面の最大の高さ及び山と山との間隔Lは、それぞ
れ1μm程度及び3μm程度である。これらの処理方法
は、いわゆる曇りガラスの製法と同様な手法である。First, the surface of the glass substrate 6 is treated by, for example, a corrosive treatment with a chemical having a corrosive action such as a fluoric acid salt or a sandblast treatment. At this time, the maximum height of the roughened surface and the distance L between the peaks are about 1 μm and about 3 μm, respectively. These processing methods are the same as the so-called frosted glass manufacturing method.
【0029】次いで、ガラス基板6の粗面化処理された
面上にスパッタリングによってITOの薄膜を約100
0オングストロームとした透明電極2の層を形成する。
この透明電極2の層を形成する際には、ArとO2 の混
合ガスを用いるとともに、10- 3Torr程度の真空度中に
て行う。Then, an ITO thin film of about 100 is sputtered on the roughened surface of the glass substrate 6.
A layer of the transparent electrode 2 having a thickness of 0 angstrom is formed.
In forming a layer of the transparent electrode 2, together with a mixed gas of Ar and O 2, 10 - carried out at 3 Torr vacuum degree of about in.
【0030】透明電極2の形成を終えた後、その面上
に、10- 6〜10- 7Torrの真空度中にてTPD及びAl
q3 を順に抵抗加熱蒸着法により蒸着し、それぞれ50
0オングストロームのホール輸送層4及び発光層3を形
成する。発光層3の形成を終えた後、その上に10- 6〜
10- 7Torrの真空度中にてMg−Alを蒸着し、金属電
極1を形成する。[0030] After finishing the formation of the transparent electrode 2, on the surface, 10 - 6 ~10 - 7 Torr TPD and Al in vacuum in the
q 3 Are sequentially deposited by the resistance heating vapor deposition method, and
A 0 Å hole transport layer 4 and a light emitting layer 3 are formed. After finishing the formation of the light-emitting layer 3, thereon 10 - 6 ~
10 - 7 Torr by depositing Mg-Al in vacuum in, to form the metal electrode 1.
【0031】このようにして各層の界面が上述した程度
に粗面化されることとなる。その結果、ある視角からみ
た時の発光層内の各発光点の光路差が異なり、一定では
なくなる。従って干渉効果は平均化され、輝度及び発光
スペクトルの視角依存性や膜厚のバラツキによる変化も
抑制されることとなる。In this way, the interface of each layer is roughened to the above degree. As a result, the optical path difference of each light emitting point in the light emitting layer when viewed from a certain viewing angle is different and is not constant. Therefore, the interference effect is averaged, and changes due to viewing angle dependence of luminance and emission spectrum and variation in film thickness are suppressed.
【0032】さらに正反射が減少するのでコントラスト
も向上する。なお、本実施例では、まずガラス基板1の
表面に対して粗面化処理することによて、発光層と金属
電極の接する面を粗面化した場合について説明したが、
この例に限らず、発光層の金属電極と接する側の面のみ
に対して粗面化処理を施すようにしてもよい。Further, since the regular reflection is reduced, the contrast is also improved. In the present embodiment, the case where the surface of the glass substrate 1 is first roughened to roughen the surface in contact with the light emitting layer and the metal electrode has been described.
Not limited to this example, only the surface of the light emitting layer that is in contact with the metal electrode may be roughened.
【0033】さらに、本発明は、上記実施例の2層構造
に限らず、図4に示す3層構造の場合も同様に各層間の
界面を粗面化することができる。Further, the present invention is not limited to the two-layer structure of the above-mentioned embodiment, and the interface between the respective layers can be roughened similarly in the case of the three-layer structure shown in FIG.
【0034】[0034]
【発明の効果】以上説明したように、本発明の有機EL
素子によれば、有機EL層の金属電極に接する側の面又
は金属電極の有機EL層に接する側の面を粗面化し、発
光層内の発光点からの光の光路差を異ならせたことによ
り、干渉効果を平均化し、角度依存性及び膜厚依存性を
小さくしたので、視角による輝度の低下を阻止すること
ができる。As described above, the organic EL device of the present invention
According to the element, the surface of the organic EL layer on the side in contact with the metal electrode or the surface of the metal electrode on the side in contact with the organic EL layer is roughened so that the optical path difference of light from the light emitting point in the light emitting layer is made different. As a result, the interference effect is averaged and the angle dependence and the film thickness dependence are reduced, so that it is possible to prevent the decrease in luminance due to the viewing angle.
【図1】本発明を2層構造の有機EL素子に適用した場
合の一実施例を示す図である。FIG. 1 is a diagram showing an example in which the present invention is applied to an organic EL device having a two-layer structure.
【図2】図1に示す有機EL素子の粗面部分の一部を示
す図である。FIG. 2 is a diagram showing a part of a rough surface portion of the organic EL element shown in FIG.
【図3】2層構造の有機EL素子を示す構造図である。FIG. 3 is a structural diagram showing an organic EL device having a two-layer structure.
【図4】3層構造の有機EL素子を示す構造図である。FIG. 4 is a structural diagram showing an organic EL device having a three-layer structure.
【図5】2層構造の有機EL素子における光の干渉を説
明する部分拡大断面図である。FIG. 5 is a partial enlarged cross-sectional view illustrating light interference in an organic EL element having a two-layer structure.
【図6】2層構造の有機EL素子におけるEL層の膜厚
発光強度分布を説明するグラフである。FIG. 6 is a graph illustrating the film thickness light emission intensity distribution of an EL layer in a two-layer structure organic EL element.
【図7】2層構造の有機EL素子におけるEL層の波長
発光強度分布を説明するグラフである。FIG. 7 is a graph illustrating a wavelength emission intensity distribution of an EL layer in an organic EL device having a two-layer structure.
【図8】2層構造の有機EL素子におけるEL層の単体
層の膜厚輝度減衰曲線を説明するグラフである。FIG. 8 is a graph illustrating a film thickness luminance decay curve of a single layer of an EL layer in a two-layer structure organic EL element.
1 金属電極 2 透明電極 3 EL層 4 正孔輸送層 5 電子輸送層 6 ガラス基板 1 Metal Electrode 2 Transparent Electrode 3 EL Layer 4 Hole Transport Layer 5 Electron Transport Layer 6 Glass Substrate
───────────────────────────────────────────────────── フロントページの続き (72)発明者 田中 幸男 山梨県甲府市大里町465番地 パイオニア ビデオ株式会社国母工場内 (72)発明者 米本 圭伸 山梨県甲府市大里町465番地 パイオニア ビデオ株式会社国母工場内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Yukio Tanaka 465 Osato-cho, Kofu-shi, Yamanashi Pioneer Video Co., Ltd.Kokumo Factory (72) Inventor Keinobu Yonemoto 465 Osato-cho, Kofu-shi, Yamanashi Pioneer Video Co., Ltd. Kokumo Factory
Claims (1)
金属電極を順に積層した有機EL素子において、前記有
機EL層の前記金属電極に接する側の面又は前記金属電
極の前記有機EL層に接する側の面が粗面化されている
ことを特徴とする有機EL素子。Claim: What is claimed is: 1. An organic EL device comprising a transparent substrate, a transparent electrode, an organic EL layer, and a metal electrode laminated in this order on a surface of the organic EL layer on the side in contact with the metal electrode or the metal electrode. 2. An organic EL element having a roughened surface on the side in contact with the organic EL layer.
Priority Applications (1)
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JP17867991A JP2843925B2 (en) | 1991-06-24 | 1991-06-24 | Organic EL device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17867991A JP2843925B2 (en) | 1991-06-24 | 1991-06-24 | Organic EL device |
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JPH053079A true JPH053079A (en) | 1993-01-08 |
JP2843925B2 JP2843925B2 (en) | 1999-01-06 |
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JP17867991A Expired - Fee Related JP2843925B2 (en) | 1991-06-24 | 1991-06-24 | Organic EL device |
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