CN1280923C - LED structure with low resistivity layer - Google Patents
LED structure with low resistivity layer Download PDFInfo
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- CN1280923C CN1280923C CN 02143976 CN02143976A CN1280923C CN 1280923 C CN1280923 C CN 1280923C CN 02143976 CN02143976 CN 02143976 CN 02143976 A CN02143976 A CN 02143976A CN 1280923 C CN1280923 C CN 1280923C
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- gallium nitride
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Abstract
The present invention relates to a diode structure, which comprises the structure of low-resistance layer in a p-shaped area and/or an n-type area. The diode structure can reduce the equivalent resistance in the p-shaped area and/or the n-shaped area so as to reduce the operating voltage of elements and enhance the power.
Description
Technical field
The invention relates to a kind of semiconductor element, particularly, can reduce its equivalent resistance about on a kind of diode element that is applied to low hole mobility, the present invention be specially adapted to wide can based material such as the application of gallium nitride diode element etc.
Background technology
Typical photoelectric cell is because the development of epitaxy technology, the n type zone of often on substrate, growing up in regular turn, light-emitting zone, p type zone, and in n type and p type zone, make the electrode contact zone, because electron mobility be a height than hole mobility, and effective doping in hole is low than electronics generally, that is under same thickness and structure, p type resistance all is higher than n type resistance, general solution is all grown up the thickness of p type and is about 3000 dusts, and it is grown up in the top of structure, to reduce resistance.Right in the application of light-emitting diode, for increasing luminous efficiency, transparency electrode is quite important selection, on gallium nitride light-emitting diode, often with the Ni/Au evaporation on its p zone, make its transparence with heat treatment, to increase penetrance, as for general transparent conductive oxide material commonly used, tin indium oxide (indium tin oxide, ITO), though can form ohmic contact with n type gallium nitride, on p type gallium nitride, then because the work function problem, cause forming good Ohmic contact, thereby can't directly apply to the gallium nitride element, and the general practice, can between ITO and p type gallium nitride, increase by an indirect layer (interlayer), to adjust interface parameter such as work function etc.,, reduce contact resistance so that it forms ohmic contact, yet this practice is owing to increase layer indirectly, influence the light transmittance and the operability of element, and operate down when high temperature is long, stability of this indirect layer also is problem.
Therefore, have with the downward structure of p type, the light emitting diode construction of growth, and contact with ITO to form the good Ohmic characteristic in the n of the superiors type zone, so in this method, the p type zone under it is then because afore-mentioned characteristics, cause resistance quite high, thereby limit this structural development.
Fig. 1 is the schematic diagram of the traditional gallium nitride diode structure of known skill, comprising: substrate 101; Gallium nitride compound semiconductor low temperature buffer layer 103; Non-impurity-doped type gallium nitride compound semiconductor layer 105; N type gallium nitride compound semiconductor layer 107; Gallium nitride compound semiconductor luminescence activity layer (active layer) 109; P type gallium nitride compound semiconductor 111 via the element process technique, is made n electrode 113 and p layer transparency electrode 115 and p electrode 117.
On the ITO electrode is used, can't form the problem that good ohmic contacts in order to improve above-mentioned p type zone with ITO, can the downward structure of p type solve, as shown in Figure 2.Comprise: substrate 201; Gallium nitride compound semiconductor low temperature buffer layer 203; Non-impurity-doped type gallium nitride compound semiconductor layer 205; P type gallium nitride compound semiconductor layer 207; Gallium nitride compound semiconductor luminescence activity layer (activelayer) 209; N type gallium nitride compound semiconductor 211.Via the element process technique, make n type transparency electrode ITO 213 and n layer electrode 215 and p type electrode 217 etc.Under this situation, though can solve the ITO contact problems of n type gallium nitride compound semiconductor layer 211, so but make p type gallium nitride compound semiconductor layer 207 produce bigger resistance, thereby limited purposes, though, the method that can change thickness reduces resistance, yet improve limited, therefore, how to effectively reduce the resistance of n type gallium nitride compound semiconductor layer 211, be the major subjects that becomes the downward structure of p type, the present invention promptly proposing a kind of tunneling layer structure, utilizes tunneling effect to solve diode high resistance problem.
Summary of the invention
The objective of the invention is to propose a kind of structure, see through this structure the equivalent conductance of diode element is increased, and needn't change epitaxial thickness.
The present invention is arranged in the p layer of diode structure in this structure, adds the preferable n layer of conductivity, and between p and n layer, the adding tunneling layer, and this low resistivity layer is by the p type and the n section bar matter of high concentration, or/and formed with different heterostructures.Under bias voltage, electric current or electron stream see through electrode and cross this low resistivity layer via bias voltage/tunneling effect, arrive the n layer of conduction easily, move to the luminescent layer below in n layer or interface layer, enter in the p layer region via snowslide/tunneling effect again, enter the luminous zone again and electronics is combined into photon.
That is to say that the invention provides a kind of light emitting diode construction with low resistivity layer, this structure comprises the low resistivity layer that is positioned at one of p or n layer region; Wherein this low resistivity layer is by utilizing carrier via tunneling effect, avalanche effect or suchlike effect, with resistance or the operating voltage that reduces this epitaxial structure.The thickness of this p/n interface between 10 dusts (A) between 2000 dusts (A).
This low resistivity layer is the superlattice structure (In of p/n type aluminum indium nitride gallium semiconductor layer
X1Ga
Y1Al
(1-x1-y1)N:MgZnSi/In
X2Ga
Y2Al
(1-x2-y2)N:MgZnSi, (0≤x1, y1≤1,0≤x2, y2≤1,0≤x1+y1≤1,0≤x2+y2≤1) constitutes, its thickness combination is that logarithm is between 3 to 100 pairs between between 10 to 500 dusts (A) or between 10 to 500 dusts (A), and gross thickness is between 210 to 100000 dusts (A).
This structure further comprises lower electrode, and it is to be positioned on p type aluminum indium nitride gallium semiconductor layer, low resistivity layer structure or the n type aluminum indium nitride gallium semiconductor layer.
Benefit is seen for objects and advantages of the present invention more can be shown, below will be by specific embodiment and the conjunction with figs. explanation in describing in detail.
Description of drawings
Fig. 1 is the downward gallium nitride light-emitting diode structure schematic diagram of traditional n of known technology.
Fig. 2 is the downward gallium nitride light-emitting diode structure schematic diagram of n.
Fig. 3 is a structural representation, and the structure of the gallium nitride light-emitting diode of the embodiment of the invention one is described.
Fig. 4 is the schematic diagram of the gallium nitride diode structure of explanation embodiment two.
Fig. 5 is the schematic diagram of the gallium nitride diode structure of explanation embodiment two.
Among the figure
101 substrates
103 gallium nitride compound semiconductor low temperature buffer layers
105 non-impurity-doped type gallium nitride compound semiconductor layers
107 n type gallium nitride compound semiconductor layers
109 gallium nitride compound semiconductor luminescence activity layers
111 p type gallium nitride compound semiconductors
113 n electrodes
115 p layer transparency electrode
117 p electrodes
201 substrates
203 gallium nitride compound semiconductor low temperature buffer layers
205 non-impurity-doped type gallium nitride compound semiconductor layers
207 p type gallium nitride compound semiconductor layers
209 gallium nitride compound semiconductor luminescence activity layers
211 n type gallium nitride compound semiconductor layers
213 n type transparency electrode ITO
301 substrates
303 gallium nitride compound semiconductor resilient coatings
305 n or non-impurity-doped type gallium nitride compound semiconductor layer
307 n type gallium nitride compound semiconductor layers
309 low resistivity layers
311 heavily doped p type gallium nitride compound semiconductor layers
313 p type gallium nitride compound semiconductor layers
315 luminescent layers
317 n type gallium nitride compound semiconductor layers
319 heavy doping n type gallium nitride compound semiconductor layers
321 ito transparent electrodes
323 metal contact layers
325 p type contact layers
401 substrates
403 gallium nitride compound semiconductor resilient coatings
405 n or non-impurity-doped type gallium nitride compound semiconductor layer
407 n type gallium nitride compound semiconductor layers
409 low resistivity layers
411 heavy doping p type gallium nitride compound semiconductor layers
413 p type gallium nitride compound semiconductor layers
415 luminescent layers
417 n type gallium nitride compound semiconductor layers
419 heavily doped n type gallium nitride compound semiconductor layers
421 ito transparent electrode layers
423 metal contact layers
425 contact layers
501 substrates
503 gallium nitride compound semiconductor resilient coatings
505 n types or non-impurity-doped type gallium nitride compound semiconductor layer
507 n type gallium nitride compound semiconductor layers
509 low resistivity layers
511 heavily doped p type gallium nitride compound semiconductor layers
513 p type gallium nitride compound semiconductor layers
515 luminescent layers
517 n type gallium nitride compound semiconductor layers
519 heavy doping n type gallium nitride compound semiconductor layers
521 ito transparent electrodes
523 metal contact layers
525 ito transparent electrodes
527 contact layers
Embodiment
The present invention will utilize specific embodiment behind literary composition and with reference to the relevant drawings explanation, the gallium nitride compound semiconductor in the literary composition is to utilize Metalorganic Chemical Vapor Deposition (MOCVD) or molecular beam epitaxy (MBE) or other epitaxy technology to make.The n type impurity of n type gallium nitride compound semiconductor of the present invention can be: the element of silicon (Si), germanium (Ge) or other tool identical function.The p type impurity of p type gallium nitride compound semiconductor of the present invention can be: the element of magnesium (Mg), zinc (Zn), beryllium (Be) or other tool identical function.
Low resistivity layer is to utilize carrier via as tunneling effect, or avalanche effect etc., reducing resistance, or a kind of structure of operating voltage, substantial structure such as high concentration (＞=7 * 1017cm-3) p/n interface, or p+GaN/n+GaN (10～2000 dust); Superlattice structure (In for p/n type aluminum indium nitride gallium semiconductor layer/p/n type aluminum indium nitride gallium semiconductor layer
X1Ga
Y1Al
(1-x1-y1)N:MgZnSi/In
X2Ga
Y2Al
(1-x2-y2)N:MgZnSi, (0≤x1, y1≤1,0≤x2, y2≤1,0≤x1+y1≤1,0≤x2+y2≤1) constitutes, and its thickness is combined as 10～500/10～500 dusts (A), and logarithm is between 3 to 100, and gross thickness is between 60 to 100000 dusts (A).
(embodiment one)
Fig. 3 is the schematic diagram of the gallium nitride diode structure of explanation embodiment one, and comprising: substrate 301, material for example are aluminium oxide (Al
2O
3, sapphire), gallium nitride (GaN), carborundum (SiC), GaAs (GaAs), silicon (Si), germanium (Ge), SiGe (SiGe) etc.; Gallium nitride compound semiconductor resilient coating 303 is formed on substrate 301 surfaces, is noncrystalline (amorphous) tissue, and thickness is about 50～500 dusts (A); N or non-impurity-doped type gallium nitride compound semiconductor layer 305, thickness are about 1～10 micron (μ m).N type gallium nitride compound semiconductor layer 307, thickness are about 0.5～2 micron (μ m), aforesaid low resistivity layer 309, and structure, composition, thickness etc. are all as described above.Heavily doped p type gallium nitride compound semiconductor layer 311, thickness is about 500 dusts (A)～4 micron (μ m), p type gallium nitride compound semiconductor layer 313, luminescent layer 315, n type gallium nitride compound semiconductor layer 317, heavy doping n type gallium nitride compound semiconductor layer 319 is formed on n type gallium nitride compound semiconductor layer 317 surfaces, and thickness is about 500 dusts (A)～2 micron (μ m), to form good Ohmic contact; Contact layer also can be the low energy based material such as the InGaN In of single or multiple lift
xGa
(1-x)N (0＜=x＜=1).After extension finishes, use plated film, little shadow (photolithography), heat treatment and etch process, on p type gallium nitride compound semiconductor layer 311, make platform, and make ito transparent electrode 321 on n layer semiconductor 319, the metal contact layer 323 of making 321 layers is made on 325 in 311 layers of the p type contact layers on 321 layers.
(embodiment two)
Fig. 4 is the schematic diagram of the gallium nitride diode structure of explanation embodiment two, and comprising: substrate 401, material for example are aluminium oxide (Al
2O
3, sapphire), gallium nitride (GaN), carborundum (SiC), GaAs (GaAs), silicon (Si), germanium (Ge), SiGe (SiGe) etc.; Gallium nitride compound semiconductor resilient coating 403 is formed on substrate 401 surfaces, is noncrystalline (amorphous) tissue, and thickness is about 50～500 dusts (A); N or non-impurity-doped type gallium nitride compound semiconductor layer 405, thickness are about 1～10 micron (μ m).N type gallium nitride compound semiconductor layer 407, thickness are about 0.5～2 micron (μ m), aforesaid low resistivity layer 409, and structure, composition, thickness etc. are all as described above.Heavily doped p type gallium nitride compound semiconductor layer 411, thickness is about 500 dusts (A)～4 micron (μ m), p type gallium nitride compound semiconductor layer 413, luminescent layer 415, n type gallium nitride compound semiconductor layer 417, heavily doped n type gallium nitride compound semiconductor layer 419 is formed on n type gallium nitride compound semiconductor layer 417 surfaces, and thickness is about 500 dusts (A)～2 micron (μ m), to form good Ohmic contact; Contact layer also can be the low energy based material such as the InGaN In of single or multiple lift
xGa
(1-x)N (0＜=x＜=1).After extension finishes, use plated film, little shadow (photolithography), heat treatment and etch process, on low resistivity layer 409, make platform, and make ito transparent electrode layer 421 on n layer semiconductor 419, the metal contact layer 423 of making ito transparent electrode layer 421 is made contact layer 425 on low resistivity layer on ito transparent electrode layer 421.
(embodiment three)
Fig. 5 is the schematic diagram of the gallium nitride diode structure of explanation embodiment two, and comprising: substrate 501, material for example are aluminium oxide (Al
2O
3, sapphire), gallium nitride (GaN), carborundum (SiC), GaAs (GaAs), silicon (Si), germanium (Ge), SiGe (SiGe) etc.; Gallium nitride compound semiconductor resilient coating 503 is formed on substrate 501 surfaces, is noncrystalline (amorphous) tissue, and thickness is about 50～500 dusts (A); N type or non-impurity-doped type gallium nitride compound semiconductor layer 505, thickness are about 1～10 micron (μ m).N type gallium nitride compound semiconductor layer 507, thickness are about 0.5～2 micron (μ m), aforesaid low resistivity layer 509, and structure, composition, thickness etc. are all as described above.Heavily doped p type gallium nitride compound semiconductor layer 511, thickness is about 500 dusts (A)～4 micron (μ m), p type gallium nitride compound semiconductor layer 513, luminescent layer 515, n type gallium nitride compound semiconductor layer 517, heavy doping n type gallium nitride compound semiconductor layer 519 is formed on n type gallium nitride compound semiconductor layer 517 surfaces, and thickness is about 500 dusts (A)～2 micron (μ m), to form good Ohmic contact; Contact layer also can be the low-lying level based material such as InGaN InxGa (1-x) N (0＜=x＜=1) of single or multiple lift, after extension finishes, use plated film, little shadow (photolithography), heat treatment and etch process, on n type gallium nitride compound semiconductor layer 507, make platform, and make ito transparent electrode 521 and 525 respectively on heavy doping n type gallium nitride compound semiconductor layer 519 and the n type gallium nitride compound semiconductor layer 507, the metal contact layer 523 of making ito transparent electrode 521 is made contact layer 527 on 525 layers on ito transparent electrode 521.
Though the present invention discloses as above with specific embodiment; right its is not in order to limiting the present invention, anyly is familiar with this skill person, without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention is as the criterion when looking appended claim.
Claims (5)
1. the light emitting diode construction with low resistivity layer is characterized in that this structure comprises the low resistivity layer that superlattice structure constituted of the superlattice structure or the p/n type aluminum indium nitride gallium semiconductor layer/p/n type aluminum indium nitride gallium semiconductor layer of p/n type aluminum indium nitride gallium semiconductor layer; Wherein this low resistivity layer is to utilize charge carrier to reduce the resistance or the operating voltage of this structure via tunneling effect, avalanche effect.
2. structure as claimed in claim 1, wherein this low resistivity layer is the p/n interface of high concentration.
3. structure as claimed in claim 2, wherein the concentration of the p/n interface of this high concentration is equal to or greater than 7 * 10
17Individual/cubic centimeter.
4. structure as claimed in claim 2, wherein the thickness of this p/n interface between 10 dusts between 2000 dusts.
5. structure as claimed in claim 1, wherein this low resistivity layer is that the superlattice structure of p/n type aluminum indium nitride gallium semiconductor layer is by In
X1Ga
Y1Al
(1-x1-y1)N:MgZnSi/In
X2Ga
Y2Al
(1-x2-y2)N:MgZnSi constitutes, 0≤x1 wherein, and y1≤1,0≤x2, y2≤1,0≤x 1+y1≤1,0≤x2+y2≤1, its thickness combination is between 10 to 500 dusts, and logarithm is between 3 to 100 pairs, and gross thickness is between 210 to 100000 dusts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02143976 CN1280923C (en) | 2002-09-29 | 2002-09-29 | LED structure with low resistivity layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02143976 CN1280923C (en) | 2002-09-29 | 2002-09-29 | LED structure with low resistivity layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1485930A CN1485930A (en) | 2004-03-31 |
| CN1280923C true CN1280923C (en) | 2006-10-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02143976 Expired - Lifetime CN1280923C (en) | 2002-09-29 | 2002-09-29 | LED structure with low resistivity layer |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100418237C (en) * | 2004-09-23 | 2008-09-10 | 璨圆光电股份有限公司 | N type contact layer structure of gallium nitride multiple quantum trap luminous diode |
| US8865565B2 (en) * | 2011-08-02 | 2014-10-21 | Kabushiki Kaisha Toshiba | LED having a low defect N-type layer that has grown on a silicon substrate |
| CN103779450A (en) * | 2012-10-17 | 2014-05-07 | 甘志银 | Integration method for increasing luminous power of LED |
| JP6990499B2 (en) * | 2016-04-18 | 2022-01-12 | スタンレー電気株式会社 | Manufacturing method of vertical resonator type light emitting element and vertical resonance type light emitting element |
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2002
- 2002-09-29 CN CN 02143976 patent/CN1280923C/en not_active Expired - Lifetime
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|---|---|
| CN1485930A (en) | 2004-03-31 |
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Effective date of registration: 20091211 Address after: TaiWan, China Co-patentee after: LUMENS Limited by Share Ltd. Patentee after: FORMOSA EPITAXY INCORPORATION Address before: Taiwan, China Patentee before: Formosa Epitaxy Incorporation |
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| CX01 | Expiry of patent term |
Granted publication date: 20061018 |
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