CN109390459A - Flexible LED element and flexible LED display panel - Google Patents
Flexible LED element and flexible LED display panel Download PDFInfo
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- CN109390459A CN109390459A CN201710661527.2A CN201710661527A CN109390459A CN 109390459 A CN109390459 A CN 109390459A CN 201710661527 A CN201710661527 A CN 201710661527A CN 109390459 A CN109390459 A CN 109390459A
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- 230000009975 flexible effect Effects 0.000 title claims abstract description 83
- 239000010410 layer Substances 0.000 claims abstract description 137
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 claims abstract description 28
- 239000011241 protective layer Substances 0.000 claims abstract description 28
- 239000010949 copper Substances 0.000 claims abstract description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 87
- 239000004065 semiconductor Substances 0.000 claims description 63
- 229910002601 GaN Inorganic materials 0.000 claims description 46
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 44
- 239000004411 aluminium Substances 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 11
- 239000000084 colloidal system Substances 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 7
- 230000004308 accommodation Effects 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910017083 AlN Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 150000004820 halides Chemical class 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 6
- 239000011787 zinc oxide Substances 0.000 claims 4
- 239000004408 titanium dioxide Substances 0.000 claims 2
- 229910052594 sapphire Inorganic materials 0.000 abstract description 19
- 239000010980 sapphire Substances 0.000 abstract description 19
- 238000000034 method Methods 0.000 abstract description 18
- 238000005516 engineering process Methods 0.000 abstract description 7
- 239000004020 conductor Substances 0.000 abstract description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 3
- 230000003760 hair shine Effects 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 229910021494 β-cristobalite Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- -1 Titanium-aluminum compound Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
The present invention is directed to disclose a kind of flexible LED element and a kind of flexible LED display panel.Sapphire substrate among LED element is substituted for the copper base of high thermal conductivity property different from the prior art using the wafer bond techniques of stripping technology, the present invention is especially constituted so-called flexible LED element with thin metal flexible base plate, a substrate protective layer, a lattice matching layers, a light emitting structure, a first electrode and a second electrode.Particularly, since the thin metal substrate that thickness is about 25-150 μm has outstanding pliability, high thermal conductivity characteristic and high temperature resistant property, engineering staff can produce in large quantities flexible LED element of the invention using the film deposition equipments such as PECVD and MOCVD cooperation Full-automatic roll (roll-to-roll) production line.It is worth noting that can effectively exclude generated heat when flexible LED element shines since thin metal flexible base plate is excellent heat conductor.
Description
Technical field
Correlative technology field of the present invention about light-emitting component, especially have good heat-dissipating effect a kind of pliability LED member
Part and a kind of flexible LED display panel.
Background technique
Light emitting diode (Light-Emitting Diode, LED) is the light-emitting component being widely used at present, due to its tool
There is small in size, long service life, thus is widely used among the daily life of the mankind.
Fig. 1 is the side sectional view for showing conventional LED elements.As shown in Figure 1, traditional LED element 1 ' is lain in structure
Include: a sapphire substrate 11 ', a n type semiconductor layer 12 ', a multiple quantum trap structure (multiple quantum well,
MQW) 13 ', one p type semiconductor layer 14 ', a first electrode 15 ' and a second electrode 16 '.Wherein, common N-type semiconductor
Layer 12 ' and the material of the p type semiconductor layer 14 ' are respectively n type gallium nitride (n-type gallium nitride, n-GaN) and P
Type gallium nitride (p-type gallium nitride, p-GaN)；Also, multiple quantum trap structure 13 ' is mainly InGaN/GaN
Multiple stack architecture.
The Electronics Engineer for being familiar with the design and fabrication of LED element should be understood that conventional LED elements 1 ' shown in FIG. 1 are
GaN series blue light diode (GaN-based blue LED) shows following disadvantage on practice makes:
(1) significant difference of lattice constant of the Zhao Yin between sapphire substrate 11 ' and n type semiconductor layer 12 ', largely
Dislocation difference row (misfit dislocation) is created on the interface of sapphire substrate 11 ' Yu n type semiconductor layer 12 ', leads to electricity
A large amount of declines of son and the combined efficiency (electron-hole recombination rate) in hole.
(2) capacity of heat transmission of sapphire substrate 11 ' is very poor, therefore can not effectively exclude to be produced when LED element 1 ' operates
Raw heat causes to generate hot stack phenomenon inside LED element 1 '；Serious person, excessive hot stack will cause the mistake of LED element 1 '
Energy.
In order to solve drawbacks described above, wafer bond techniques (the lift-off and bonding of stripping technology is utilized
Approach it) is then suggested.U.S. Patent number: US8,507,357 discloses a kind of side to remove LED element substrate
Method.Please refer to the process schematic representation shown by Fig. 2A and Fig. 2 B to remove the method for LED element substrate.Such as Fig. 2A and Fig. 2 B
It is shown, prior to forming a transition zone (transition layer) 10 ' on sapphire substrate 11 ' headed by the stripping means；
Then, sapphire substrate 11 ' is processed into a patterned sapphire substrate (Patterned under the covering of the transition zone 10 '
sapphire substrate,PSS)11a’。
Unceasingly, which then forms a barrier layer 17 ' on the patterned sapphire substrate 11a ',
In the barrier layer 17 ' fill up multiple groove 11a1 ' of patterned sapphire substrate 11a ' simultaneously.It later, can be on barrier layer 17 '
With formed in order on patterned sapphire substrate 11a ' n type semiconductor layer 12 ', multiple quantum trap structure 13 ', with p-type half
Conductor layer 14 ' is to constitute a LED light emitting structure.It is worth noting that, n type semiconductor layer 12 ' and patterned sapphire substrate
There are multiple first holes 18 ' between 11a '.Finally, after p type semiconductor layer 14 ' is covered with a special basal layer 19 ', just
The mode that can use wet etching etches multiple second holes by those first holes 18 ' among n type semiconductor layer 12 '
Hole 20 ' promotes patterned sapphire substrate 11a ' to remove and go out from n type semiconductor layer 12 ', and then obtains another LED element
1a’。
The Electronics Engineer of LED element design and fabrication is familiar with it can be deduced that special basal layer 19 ' made of copper can be effective
Exclude generated heat when LED element 1a ' running.However, LED element obtained by wafer bond techniques using stripping technology
1a ' is still older than in practice and shows following disadvantage:
(A) copper belongs to easily plastic deformation material, therefore special basal layer 19 ' made of copper instead can be in cutting crystal grain (die
Saw process) when cause the breaking-up of LED light emitting structure.
(B) on the other hand, since wet etching belongs to anisotropic etching, therefore, it is difficult to effectively control wet etching to N
Unnecessary etching caused by type semiconductor layer 12 '.
By above description, we it is known that how in the case where not destroying LED light emitting structure with other high-termal conductivity
Substrate replaces the sapphire substrate among conventional LED elements, becomes the main research of each LED wafer factory (LED foundries)
Project.In view of this, the present inventor is strongly subject to study and composition, and a kind of pliability for completing this creation is researched and developed finally
LED element and a kind of flexible LED display panel.
Summary of the invention
It is a primary object of the present invention to propose a kind of flexible LED element and a kind of flexible LED display panel.It is different
The sapphire substrate among LED element is substituted for high thermal conductivity property using the wafer bond techniques of stripping technology in the prior art
Copper base, the present invention is especially with thin metal flexible base plate, a substrate protective layer, a lattice matching layers, a light-emitting junction
Structure, a first electrode constitute so-called flexible LED element with a second electrode.It is worth noting that since thickness is about
70-150 μm of thin metal matrix plate has outstanding pliability, high thermal conductivity characteristic and high temperature resistant property, therefore engineering staff can benefit
This hair is produced in large quantities with the film deposition equipments such as PECVD and MOCVD cooperation Full-automatic roll (roll-to-roll) production line
Bright flexible LED element.In addition to this, since thin metal flexible base plate is excellent heat conductor, can have
Effect ground excludes generated heat when flexible LED element shines.
In order to reach the main purpose of aforementioned present invention, the present invention provides an embodiment of the flexible LED element, packet
It includes:
One flexible base plate is made of a thin metal；
One substrate protective layer, is overlying on the flexible base plate, or coats the flexible base plate；
One lattice matching layers are formed on the substrate protective layer；
One light emitting structure, comprising:
One first semiconductor material layer, is formed on the lattice matching layers；
One active layers are formed on first semiconductor material layer；And
One second semiconductor material layer, is formed on the active layers；
One first electrode is electrically connected first semiconductor material layer；And
One second electrode is formed on second semiconductor material layer.
Also, in order to reach the main purpose of aforementioned present invention, the present invention further provides the pliability LED display surfaces
One embodiment of plate, comprising:
One flexible base plate is made of a thin metal；
One substrate protective layer, is overlying on the flexible base plate, or coats the flexible base plate；
One lattice matching layers are formed on the substrate protective layer；
A light emitting structure more than one, is formed on the lattice matching layers, and each light emitting structure includes:
One first semiconductor material layer, is formed on the lattice matching layers；
One active layers are formed on first semiconductor material layer；And
One second semiconductor material layer, is formed on the active layers；
First semiconductor material layer of multiple light emitting structure is electrically connected in multiple first electrodes；
Multiple second electrodes are electrically connected on second semiconductor material layer of multiple light emitting structure；And
One transparent metal grid substrate is made of a transparent substrate, a plurality of first metal wire and a plurality of second metal wire；
Wherein, a plurality of first metal wire and a plurality of second metal wire are formed in the surface of the transparent substrate, also, this plurality of first
The first electrode of multiple light emitting structure is electrically connected in metal wire, and this is electrically connected in a plurality of second metal wire
The second electrode of multiple light emitting structures.
Detailed description of the invention
Fig. 1 is the side sectional view for showing conventional LED elements；
Fig. 2A and Fig. 2 B system show the process schematic representation of the method to remove LED element substrate；
Fig. 3 is a kind of schematic perspective view of the first embodiment of display flexible LED element of the invention；
Fig. 4 is the schematic perspective view of the second embodiment of display flexible LED element of the invention；
Fig. 5 is the stereogram exploded view of the 3rd embodiment of display flexible LED element of the invention；
Fig. 6 is a kind of perspective view of display flexible LED display panel of the invention；
Fig. 7 is the part-structure exploded view of display flexible LED display panel of the invention.
Wherein appended drawing reference are as follows:
1 flexible LED element
11 flexible base plates
10 substrate protective layers
1B lattice matching layers
1a light emitting structure
15 first electrodes
16 second electrodes
12 first semiconductor material layers
13 active layers
14 second semiconductor material layers
17 transparency conducting layers
18 pedestals
19 colloid upper covers
1L light diverging lens
181 accommodation grooves
182 support columns
183 first electric terminals
184 second electric terminals
1P light conversion particles
1M transparent metal grid substrate
1M1 transparent substrate
The first metal wire of 1M2
The second metal wire of 1M3
100 pliability LED display surfaces
2 flexible light-emitting diode displays
1 ' LED element
11 ' sapphire substrates
12 ' n type semiconductor layers
13 ' multiple quantum trap structures
14 ' p type semiconductor layers
15 ' first electrodes
16 ' second electrodes
10 ' transition zones
11a ' patterned sapphire substrate
17 ' barrier layers
11a1 ' groove
18 ' first holes
19 ' special basal layers
20 ' second holes
1a ' LED element
Specific embodiment
It is aobvious in order to more clearly describe a kind of flexible LED element proposed by the invention and a kind of pliability LED
Show panel, below in conjunction with schema, elaborates presently preferred embodiments of the present invention.
The first embodiment of flexible LED element
Referring to Fig. 3, the schematic perspective view of the first embodiment to show a kind of flexible LED element of the invention.
As shown in figure 3, flexible LED element 1 of the invention can be used as the basic luminescence element of a flexible lighting device；Further
Ground can also be used as the basic pixel of a flexible display panel.It includes: one flexible that this flexible LED element 1, which is lain in structure,
Property substrate 11, a substrate protective layer 10, a lattice matching layers 1B, a light emitting structure 1a, a first electrode 15, with a second electrode
16.In the present invention, the thickness of flexible base plate 11 between 70 μm to 150 μm, and its process materials can be stainless steel,
Copper, gold, nickel, molybdenum, titanium, tungsten, the combination of aforementioned the two or combination more than aforementioned the two.Must special emphasis be base
It is made of in light emitting structure 1a multiple epitaxial layers of partly leading, the high-temperature stability of thin metal becomes optimal flexible base
The process materials of plate 11.In addition to this, the thin metal matrix plate that thickness is about 25-150 μm not only has excellent pliability, together
When also have high thermal conductivity property and facilitate the heat dissipation of flexible LED element 1.
As shown in figure 3, substrate protective layer 10 is overlying on the flexible base plate 11, and its thickness is between 50nm to 500nm
Between.Alternatively, in can also enable substrate protective layer 10 entirely coat the flexible base plate 11 in technique.In this way, manufacturing the hair
Photo structure 1a it is multiple partly lead epitaxial layer when, can blocking and be effectively prevented from flexible base by substrate protective layer 10
Pollution of the plate 11 by epitaxial material.The manufacture material of the substrate protective layer 10 can for it is following any one: silica
(SiO2), titanium dioxide (TiO2), nickel oxide (NiO), aluminium oxide (Al2O3), zinc oxide (ZnO), nitride, halide, silicon substrate
Compound, the combination of aforementioned the two or combination more than aforementioned the two.
It is worth noting that, substrate protective layer 10 is between flexible base plate 11 and lattice matching layers 1B, and lattice
With layer 1B as made by the monocrystal material with particular crystal orientation, such as: aluminium nitride (AlN), undoped gallium nitride (undoped
) or zinc oxide (ZnO) GaN.Using silica and aluminium nitride as the demonstration of substrate protective layer 10 and lattice matching layers 1B
Property material, wherein aluminium nitride be hexagonal wurtzite structure, with a=0.311nm, c=0.498nm lattice constant；Another party
Face, β-cristobalite crystallographic system silica (β-Cristobalite SiO2) then there is a=0.499nm lattice constant.Therefore,
The engineer of thin film deposition processes is familiar with it can be deduced that using silica as substrate protective layer 10, in addition to protection can be reached
Flexible base plate 11 avoids other than its pollution by extension gaseous substance, while aluminium nitride film can also be enabled (that is, Lattice Matching
Layer 1B) it is arranged with c-axis to being formed on the substrate protective layer 10.Supplementary explanation, it is other can be used as substrate protective layer 10 with
The material system of lattice matching layers 1B arranges among following table (1) and table (2).
Table (1)
Table (2)
It must be supplemented with explanation, the manufacture material of lattice matching layers 1B can also select lattice constant close to integer times
The monocrystal material of GaN, such as: lattice constant a=0.623nm, II-VI of the zinc sulphide (ZnS) of II-VI group semiconducting compound
The lattice constant a=0.653nm of the zinc selenide (ZnSe) of race's semiconducting compound.On the other hand, with the difference of luminescent color,
The first semiconductor material layer 12, active layers 13 and the selection of the material of the second semiconductor material layer 14 of light emitting structure 1a is also followed
It is different.Traditionally, GaP, GaAsP and AlGaAs are the main material of the active layers 13 of light emitting structure 1a, so that light emitting structure 1a
Wave-length coverage can be issued between 580nm to the visible light between 740nm.However, with Metalorganic chemical vapor deposition
(metal-organic chemical vapor deposition, MOCVD) technology more becomes progressive, gallium nitride (GaN),
Aluminium gallium nitride alloy (AlxGa1-x) or InGaN (In NxGa1-xN the main material of active layers 13) is had become；It wherein, include GaN master
The light emitting structure 1a of dynamic layer 13 can issue blue light.
The element engineer for being familiar with the design and manufacture of LED grain (die) both knows about, by the value (x < 1) for increasing x
It can enable comprising InxGa1-xThe light emitting structure 1a of N active layers 13 can issue the light of long wavelength.Relatively, by the value for increasing x
(x < 1) can be enabled comprising AlxGa1-xThe light emitting structure 1a of N active layers 13 can issue the light of short wavelength.In this, it is necessary to add
It is bright, with GaN, AlxGa1-xN or InxGa1-xActive layers 13 made of N can be led in the first semiconductor material layer 12 with the second half
Body material layer 14 forms single quantum well structure；Wherein, the manufacture material of first semiconductor material layer 12 is n type gallium nitride
(n-type gallium nitride, n-GaN), such as the gallium nitride of doped silicon (Si).In addition, second semiconductor material
The manufacture material of layer 14 is p-type gallium nitride (p-type gallium nitride, p-GaN), such as the nitridation of magnesium-doped (Mg)
Gallium.However, active layers 13 can also further be designed to promote electronics and hole in the combined efficiency in active layers 13
At a multiple quantum trap structure；Wherein, the multiple quantum trap structure can for it is following any one: gallium nitride and InGaN
(InxGa1-xN multiple stack architecture, gallium nitride and aluminium gallium nitride alloy (Al)xGa1-xN multiple stack architecture or aluminium gallium nitride alloy)
(AlxGa1-xN) with InGaN (InxGa1-xN multiple stack architecture).
Unceasingly refering to Fig. 3.The first electrode 15 is electrically connected first semiconductor material layer 12, and second electricity
Pole 16 is formed on second semiconductor material layer 14；Wherein, first electrode 15 and the manufacture material of second electrode 16 can be
It is following any one: aluminium (Al), silver (Ag), titanium (Ti), nickel (Ni), gold (Au), copper (Cu), chromium (Cr), platinum (Pt), aforementioned the two
Combination or aforementioned the two more than combination.For example, first electrode 15 and second electrode 16 can for ni-au composite construction or
Titanium-aluminum compound structure.
The second embodiment of flexible LED element
Please continue to refer to Fig. 4, for the schematic perspective view of the second embodiment of display flexible LED element of the invention.
Second embodiment relative to aforementioned first embodiment, this flexible LED element 1 further includes a transparency conducting layer 17.Such as Fig. 4 institute
Show, this transparency conducting layer 17 is formed between the first electrode 15 and first semiconductor material layer 12, and is formed simultaneously in this
Between second electrode 16 and second semiconductor material layer 14.Also, in technique, the transparency conducting layer 17 be can be
Tin indium oxide (Indium tin oxide, ITO) film, zinc oxide (ZnO) film, ni-au laminated film.It must illustrate
, setting transparency conducting layer 17 purpose be to promote light extraction efficiency (the out coupling of flexible LED element 1
efficiency)。
The 3rd embodiment of flexible LED element
It is familiar with LED grain design and the semiconductor element engineer of manufacture will be appreciated that pliability shown by Fig. 3 and Fig. 4
Two embodiments of LED element 1 come under LED grain (die).Therefore, in 3rd embodiment, flexible LED element 1 by into
One step it is designed to LED part (component).Referring to Fig. 5, to show that the third of flexible LED element of the invention is real
Apply the stereogram exploded view of example.As shown in figure 5, the 3rd embodiment of flexible LED element 1 includes: the flexible base of a pedestal 18, one
Plate 11, a substrate protective layer 10, a lattice matching layers 1B, a light emitting structure 1a, a first electrode 15, a second electrode 16, one
Colloid upper cover (colloidal encapsulation cover) 19 and a smooth diverging lens 1L.
Hold above-mentioned, which has an accommodation groove 181, to by the crystal grain of flexible LED element 1 as shown in Figure 3
(die) it is placed in wherein.In addition, one first electric terminal 183 is among the pedestal 18, and have a First Line abutting end with
One first welding ends；Wherein, the surface which is exposed to the pedestal 18 is electrically connected to first electrode 15,
And first welding ends is for the bottom surface of the pedestal 18.On the other hand, one second electric terminal 184, among the pedestal 18,
And there is one second wire bonding end and one second welding ends；Wherein, it uses on the surface which is exposed to the pedestal 18
To be electrically connected to second electrode 16, and second welding ends is for the bottom surface of the pedestal 18.
On the other hand, colloid upper cover 19 is placed in 18 top of pedestal, and more around the notch by being set to the accommodation groove 181
A support column 182, mode makes around the notch of accommodation groove 181 that there are a air gap (air between colloid upper cover 19 whereby
gap).It is worth noting that, a smooth diverging lens 1L is set on the colloid upper cover 19, and spread inside the colloid upper cover 19
In multiple smooth conversion particles 1P.Also, the smooth conversion particles 1P can be fluorescent powder or quantum dot.It can be with by above description
It learns, the 3rd embodiment of pliability LED element 1 shown in fig. 5 is a white light LEDs component, therefore, by the first semiconductor material
Light emitting structure 1a composed by layer 12, active layers 13 and the second semiconductor material layer 14 can issue wave-length coverage between 450nm extremely
Blue light between 480nm, or wave-length coverage is issued between 380nm to the ultraviolet light between 420nm.
On the other hand, fluorescent powder and quantum dot is many kinds of, and following table (3) is exemplarily listed common several with table (4)
Kind material.
Table (3)
Table (4)
The embodiment of flexible LED display panel
Above description completely, clearly describe a kind of flexible LED element of the invention, will then continue to explain this hair
A kind of bright flexible LED display panel.Referring to Fig. 6, for the solid for showing a kind of flexible LED display panel of the invention
Figure；Also, referring to Fig. 7, for the part-structure exploded view for showing flexible LED display panel of the invention.Such as Fig. 6 and Fig. 7
Shown, flexible LED display panel 100 of the invention can be applied among a flexible light-emitting diode display 2, and include: one flexible
Property substrate 11, a substrate protective layer 10, a lattice matching layers 1B, multiple light emitting structure 1a, multiple first electrodes 15, multiple second
Electrode 16 and a transparent metal grid substrate 1M.
As shown in fig. 7, each light emitting structure 1a all includes the first semiconductor material layer 12, active layers 13, the second half leads
Body material layer 14, first electrode 15 and second electrode 16.Also, the transparent metal grid substrate 1M is by a transparent substrate
1M1, a plurality of first metal wire 1M2 are constituted with a plurality of second metal wire 1M3；Wherein, a plurality of first metal wire 1M2 is more with this
The second metal wire of item 1M3 is formed in the surface of transparent substrate 1M1, also, a plurality of first metal wire 1M2 is electrically connected
The first electrode 15 of multiple light emitting structure 1a, and multiple light-emitting junction is electrically connected in a plurality of second metal wire 1M3
The second electrode 16 of structure 1a.The Electronics Engineer for being familiar with transparent conductive substrate design and fabrication should be understood that this transparent metal
Grid substrate 1M belongs to transparent conductive substrate, and optimal implementation template is ito substrate or zno-based plate.
In this way, above-mentioned completely and clearly demonstrated flexible LED element of the invention and flexible LED display panel；
And have the advantages that through the present invention from the above following:
(1) being different from the prior art is to utilize the wafer bond techniques of stripping technology by the process for sapphire-based among LED element
Plate is substituted for the copper base of high thermal conductivity property, the present invention especially with thin metal flexible base plate 11, a substrate protective layer 10,
One lattice matching layers 1B, a light emitting structure 1a, a first electrode 15 and a second electrode 16 constitute so-called pliability LED member
Part 1.It is worth noting that due to thickness be about 70-150 μm thin metal matrix plate have outstanding pliability, high thermal conductivity characteristic,
With high temperature resistant property, therefore engineering staff can using the film deposition equipments such as PECVD and MOCVD cooperation Full-automatic roll (roll-
To-roll) production line produces flexible LED element 1 of the invention in large quantities.
(2) in addition to this, it is excellent heat conductor based on thin metal flexible base plate 11, therefore can effectively arranges
Generated heat when shining except flexible LED element 1.
It must be subject to detailed description the illustrating for possible embodiments of the present invention, it is emphasized that above-mentioned, only the reality
Apply the scope of the patents that example is not intended to limit the invention, all equivalence enforcements or change without departing from carried out by technical spirit of the present invention,
It is intended to be limited solely by the scope of the patents of the invention.
Claims (20)
1. a kind of pliability LED element characterized by comprising
One flexible base plate is made of a thin metal；
One substrate protective layer, is overlying on the flexible base plate, or coats the flexible base plate；
One lattice matching layers are formed on the substrate protective layer；
One light emitting structure, comprising:
One first semiconductor material layer, is formed on the lattice matching layers；
One active layers are formed on first semiconductor material layer；And
One second semiconductor material layer, is formed on the active layers；
One first electrode is electrically connected first semiconductor material layer；And
One second electrode is formed on second semiconductor material layer.
2. pliability LED element as described in claim 1, which is characterized in that the manufacture material of the thin metal can be following
Any one: stainless steel, copper, gold, nickel, molybdenum, titanium, tungsten, the combination of aforementioned the two or combination more than aforementioned the two；Also,
The manufacture material of the lattice matching layers can for it is following any one: aluminium nitride, undoped gallium nitride or zinc oxide.
3. pliability LED element as described in claim 1, which is characterized in that the manufacture material of the substrate protective layer can be
It is following any one: it is silica, titanium dioxide, nickel oxide, aluminium oxide, zinc oxide, nitride, halide, silicon base compound, preceding
State the combination of the combination or aforementioned the two of appointing the two or more.
4. pliability LED element as described in claim 1, which is characterized in that the manufacture material of first semiconductor material layer
Material is n type gallium nitride, and the manufacture material of second semiconductor material layer is p-type gallium nitride.
5. pliability LED element as described in claim 1, which is characterized in that the active layers are in first semiconductor material
Layer forms single quantum well structure with second semiconductor material layer, and the manufacture material of the active layers can for it is following any one:
Gallium nitride, aluminium gallium nitride alloy or InGaN, aluminium gallium nitride alloy chemical formula are AlxGa1-xN, InGaN chemical formula are InxGa1-xN。
6. pliability LED element as described in claim 1, which is characterized in that the active layers are in first semiconductor material
Layer forms a multiple quantum trap structure with second semiconductor material layer, and the multiple quantum trap structure can be following any
Person: the multiple stack architecture or aluminium gallium nitride alloy of the multiple stack architecture of gallium nitride and InGaN, gallium nitride and aluminium gallium nitride alloy with
The multiple stack architecture of InGaN, aluminium gallium nitride alloy chemical formula are AlxGa1-xN, InGaN chemical formula are InxGa1-xN。
7. pliability LED element as described in claim 1, which is characterized in that the first electrode and the second electrode
Manufacture material can for it is following any one: aluminium Al, silver Ag, titanium Ti, nickel, gold Au, copper Cu, chromium Cr, platinum Pt, aforementioned the two group
Combination more than conjunction or aforementioned the two.
8. pliability LED element as described in claim 1, which is characterized in that the thickness of the flexible base plate between 25 μm extremely
Between 150 μm, and the thickness of the substrate protective layer between 50nm between 500nm.
9. pliability LED element as described in claim 1, which is characterized in that further include:
One transparency conducting layer is formed between the first electrode and first semiconductor material layer, and be formed simultaneously in this second
Between electrode and second semiconductor material layer.
10. pliability LED element as described in claim 1, which is characterized in that further include:
One pedestal, comprising:
One accommodation groove, to by the flexible base plate, the substrate protective layer, the lattice matching layers, the light emitting structure, this first electricity
Pole is placed in wherein with the second electrode；
Multiple support columns, are set to around the notch of the accommodation groove；
One first electric terminal among the pedestal, and has a First Line abutting end and one first welding ends；Wherein, should
The surface that First Line abutting end is exposed to the pedestal is electrically connected to the first electrode, and first welding ends is for the bottom
The bottom surface of seat；And
One second electric terminal among the pedestal, and has one second wire bonding end and one second welding ends；Wherein, should
The surface that second wire bonding end is exposed to the pedestal is electrically connected to the second electrode, and second welding ends is for the bottom
The bottom surface of seat；
Colloid upper cover is placed in above the pedestal, and is supported by multiple support column so that around the notch of the accommodation groove and
There are a gaps between the colloid upper cover；And
Multiple smooth conversion particles intersperse among among the colloid upper cover.
11. pliability LED element as claimed in claim 11, which is characterized in that further include: a smooth diverging lens is set to
On the colloid upper cover.
12. a kind of pliability LED display panel characterized by comprising
One flexible base plate is made of a thin metal；
One substrate protective layer, is overlying on the flexible base plate, or coats the flexible base plate；
One lattice matching layers are formed on the substrate protective layer；
A light emitting structure more than one, is formed on the lattice matching layers, and each light emitting structure includes:
One first semiconductor material layer, is formed on the lattice matching layers；
One active layers are formed on first semiconductor material layer；And
One second semiconductor material layer, is formed on the active layers；
First semiconductor material layer of multiple light emitting structure is electrically connected in multiple first electrodes；
Multiple second electrodes are electrically connected on second semiconductor material layer of multiple light emitting structure；And
One transparent metal grid substrate is made of a transparent substrate, a plurality of first metal wire and a plurality of second metal wire；Its
In, which is formed in the surface of the transparent substrate, also, a plurality of first gold medal with a plurality of second metal wire
Belong to line and be electrically connected the first electrode of multiple light emitting structure, and that this is electrically connected is more for a plurality of second metal wire
The second electrode of a light emitting structure.
13. pliability LED display panel as claimed in claim 12, which is characterized in that the manufacture material of the thin metal can
For it is following any one: stainless steel, copper, gold, nickel, molybdenum, titanium, tungsten, aforementioned the two combination or aforementioned the two more than group
It closes.
14. pliability LED display panel as claimed in claim 12, which is characterized in that the manufacture material of the substrate protective layer
Material can for it is following any one: it is silica, titanium dioxide, nickel oxide, aluminium oxide, zinc oxide, nitride, halide, silated
Close object, the combination of aforementioned the two or combination more than aforementioned the two.
15. pliability LED display panel as claimed in claim 12, which is characterized in that the manufacture material of the lattice matching layers
Material can for it is following any one: aluminium nitride, undoped gallium nitride or zinc oxide.
16. pliability LED display panel as claimed in claim 12, which is characterized in that first semiconductor material layer
Manufacture material is n type gallium nitride, and the manufacture material of second semiconductor material layer is p-type gallium nitride.
17. pliability LED display panel as claimed in claim 12, which is characterized in that the active layers the first half are led in this
Body material layer and second semiconductor material layer form single quantum well structure, and the manufacture material of the active layers can be following
One: gallium nitride, aluminium gallium nitride alloy or InGaN, aluminium gallium nitride alloy chemical formula are AlxGa1-xN, InGaN chemical formula are
InxGa1-xN。
18. pliability LED display panel as claimed in claim 12, which is characterized in that the active layers the first half are led in this
Body material layer and second semiconductor material layer form a multiple quantum trap structure, and the multiple quantum trap structure can be following
Any one: the multiple stack architecture or aluminium nitride of the multiple stack architecture of gallium nitride and InGaN, gallium nitride and aluminium gallium nitride alloy
The multiple stack architecture of gallium and InGaN, aluminium gallium nitride alloy chemical formula are AlxGa1-xN, InGaN chemical formula are InxGa1-xN。
19. pliability LED display panel as claimed in claim 12, which is characterized in that the first electrode and described second
The manufacture material of electrode can for it is following any one: the combination or aforementioned of aluminium, silver, titanium, nickel, gold, copper, chromium, platinum, aforementioned the two
Appoint the combination of the two or more.
20. pliability LED display panel as claimed in claim 12, which is characterized in that further include:
One transparency conducting layer is formed between the first electrode and first semiconductor material layer, and be formed simultaneously in this second
Between electrode and second semiconductor material layer.
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| CN102754218A (en) * | 2010-02-08 | 2012-10-24 | 富士胶片株式会社 | Metal substrate with insulation layer and manufacturing method thereof, semiconductor device and manufacturing method thereof, solar cell and manufacturing method thereof, electronic circuit and manufacturing method thereof, and light-emitting elemen |
| CN103151435A (en) * | 2013-01-30 | 2013-06-12 | 东南大学 | Gallium nitride base light-emitting diode with composite potential barrier |
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- 2017-08-04 CN CN201710661527.2A patent/CN109390459A/en active Pending
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| CN102754218A (en) * | 2010-02-08 | 2012-10-24 | 富士胶片株式会社 | Metal substrate with insulation layer and manufacturing method thereof, semiconductor device and manufacturing method thereof, solar cell and manufacturing method thereof, electronic circuit and manufacturing method thereof, and light-emitting elemen |
| CN202013881U (en) * | 2010-12-20 | 2011-10-19 | 浙江名芯半导体科技有限公司 | Integrated packaging structure with vertically structured LED chips |
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