CN1347581A - Semiconductor structures having strain compensated layer and method of fabrication - Google Patents
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- 229910002704 AlGaN Inorganic materials 0.000 description 50
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
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Abstract
The present invention provides a semiconductor structure which includes a strain compensated superlattice layer comprising a plurality of pairs of constituent layers, with the first constituent layer comprising a material under tensile stress, and the second constituent layer comprising a material under compressive stress, such that the stresses of the adjacent layer compensate one another and lead to reduced defect generation. Appropriate selection of materials provides increased band gap and optical confinement in at least some implementations. The structure is particularly suited to the construction of laser diodes, photodiodes, phototransistors, and heterojunction field effect and bipolar transistors.
Description
Invention field
The present invention relates to semiconductor structure and preparation method thereof, particularly relate in the III-th family nitride material system method that the appearance using the strain compensation layer and make lattice defect becomes minimum.
Background of invention
Follow-on high-density optical device has been declared in succeeding in developing of blue laser source, comprises magnetic disc store, DVD, or the like appearance.Fig. 1 shows the cross-sectional view (S.Nakamura, MRS BULLETIN, Vol.23, No.5, pp.37-43,1998) of prior art semicondcutor laser unit.On sapphire substrate 5, form gallium nitride (GaN) resilient coating 10, form the thick silicon dioxide (SiO of n-type GaN layer 15 and 0.1mm then
2) layer 20, make described layer 20 composition, so that form the wide window 25 of 4mm, it is at GaN＜1-100〉periodicity on the direction is 12mm.Then, form n-type GaN layer 30, n-type InGaN (In
0.1Ga
0.9N) layer 35, n-type aluminium gallium nitride alloy (Al
0.14Ga
0.86N)/GaN MD-SLS ((modulation doping strained layer superlattice) Modulation Doped Stained-Layer Superlattices) cladding 40, and n type GaN cladding 45.Then, form In
0.02Ga
0.98N/In
0.15Ga
0.85(Multiple Quantum Well (Multiple Quantum Well) active layer 50 is p-type Al to NMQW afterwards
0.2Ga
0.8N cladding 55, p-type GaN cladding 60, p-type Al
0.14Ga
0.86N/GaNMD-SLS cladding 65 and p type GaN cladding 70.At p-type Al
0.14Ga
0.86Form ridged bar structure in the N/GaNMD-SLS cladding 55, be lateral to the light field of propagating in the ridged waveguide structure so that be limited in.On p-type GaN cladding 70 and n-type GaN layer 30, form electrode, so that provide electric current to inject.
In structure shown in Figure 1, n type GaN cladding 45 and p-type GaN cladding 60 are photoconductive layers.N-type Al
0.14Ga
0.86N/GaN MD-SLS cladding 40 and p-type Al
0.14Ga
0.86N/GaN MD-SLS cladding 65 plays cladding, is used to limit charge carrier and the light of launching from the active region of InGaN mqw layer 50.N-type In
0.1Ga
0.9N layer 35 is used from the effect of the resilient coating of thick AlGaN film growth, so that prevent cracking.
By utilizing structure shown in Figure 1, by electrode charge carrier is injected InGaN MQW active layer 50, make and in the 400nm wave-length coverage, carry out the light emission.Because the effective refractive index under the vallum district is greater than the effective refractive index outside the vallum district, therefore, light field is limited in the active layer of side direction, and this is because at p-type Al
0.14Ga
0.86Due to the ridged waveguide structure that forms in the N/GaN MD-SLS cladding 65.On the other hand, since the refractive index of active layer greater than n type GaN cladding 45 and p-type GaN cladding 60, n-type Al
0.14Ga
0.86N/GaNMD-SLS cladding 40 and p-type Al
0.14Ga
0.86The refractive index of N/GaN MD-SLS cladding 60, therefore, by n type GaN cladding 45, n-type Al
0.14Ga
0.86N/GaN MD-SLS cladding 40, p-type GaN cladding 60 and p-type Al
0.14Ga
0.86N/GaN MD-SLS cladding 55 laterally is being limited in light field in the active layer.Therefore, obtained the operation of transverse mode basically.
Yet,, be difficult to make defect concentration to be reduced to and be lower than 10 for structure shown in Figure 1
8Cm
-2, this is because of AlGaN, the lattice constant of InGaN and GaN is fully different each other, as n-type In
0.1Ga
0.9N layer 35, In
0.02Ga
0.98N/In
0.15Ga
0.85N MQW active layer 50, n-type Al
0.14Ga
0.86N/GaN MD-SLS cladding 40, p-type Al
0.14Ga
0.86N/GaNMD-SLS cladding 65, and p-type Al
0.2Ga
0.8When N cladding 55 surpasses critical thickness, a kind of mode as discharging strain energy will produce defective in structure.Defective causes by being separated and plays the laser absorption center, and this will cause the reduction of light radiation efficient and increase the threshold electric current.The result is: operating current becomes big, and this will make that again reliability is undermined.
In addition, in structure shown in Figure 1, with the ternary alloy three-partalloy system of InGaN as active layer.In this case, band-gap energy at 1.9eV (InN) to changing between the 3.5eV (GaN).Therefore, energy value is higher than the ultraviolet light of 3.5eV, can not obtain by utilizing the InGaN active layer.Because in for example more the high-density optical disk storage system installed with other, as the light source of optic pick-up, ultraviolet light was attractive, therefore, this some problems will occur.
For understanding the defective that in conventional ternary material system, causes better, it must be understood that InN, the mismatch of lattice constant between GaN and the AlN by being separated.At InN and GaN, InN and AlN, and the lattice mismatch between GaN and the AlN is respectively 11.3%, 13.9% and 2.3%.Therefore, even equivalent lattice constant is identical with the equivalent lattice constant of base material, but because equivalent bond length at InN, differs from one another between GaN and the AlN, the internal strain energy will be accumulated in the InGaN layer.In order to reduce the internal strain energy, in InGaN lattice mismatch material system, exist the compositional range that is separated, In atom wherein, Ga atom and Al atom are distributed in the described layer unevenly.The result who is separated is: the In atom in the InGaN layer, Ga atom and Al atom will not distribute according to each atomic molar umber of forming in the layer equably.This means, comprise that any layer the band-gap energy distribution that is separated also will become inhomogeneous.The band gap region of the part that is separated disproportionately plays the optical absorption center, perhaps makes the light of waveguide produce optical scattering.As mentioned above, the way of the typical prior art that addresses these problems is to increase drive current, therefore the life-span that will reduce semiconductor device.
Another conventional method of utilizing the GaN material system to obtain the fabricating low-defect-density laser diode is only to use GaN in cladding.Yet this method has such shortcoming: the some optical confinement in active layer will be lower than utilizes the AlGaN cladding, if this is because in the index jump of the index jump between active layer and the GaN cladding when using AlGaN in cladding.Therefore, light field is in cross direction profiles.The threshold electric current that some optical confinement in active layer need increase is to obtain identical brightness.In addition, for the GaN cladding, its potential barrier is less than the potential barrier of AlGaN cladding; This makes charge carrier can overflow active layer easily, and the threshold electric current will be increased.Therefore, when operating current increases, will make reliability, and descend the life-span on the statistics.Therefore, although described cladding will produce defective, the AlGaN cladding still is widely used.
Therefore, for a long time, need a kind of minimizing lattice defect always and can be used for obtaining laser diode, the semiconductor structure of transistor or other device, described structure has low threshold electric current and long-term reliability.
Summary of the invention
The present invention has overcome the restriction of prior art basically and the semiconductor structure that has fabricating low-defect-density and therefore improve reliability is provided.The present invention can be used for preparing also has blue light and other laser diode, HFET, hetero-junction bipolar transistor, and photodiode except other device.
Briefly, the invention provides the semiconductor structure that has base material, wherein on base material, form first cladding of first conductivity type.Form first superlattice layer of first conductivity type then on first cladding, wherein, described superlattice layer has the characteristic that below will further discuss.Then, on this superlattice layer, form active layer, subsequently, form second superlattice layer of second conductivity type.At last, form second cladding of second conductivity type.In addition, also can on the both sides of active layer and then, use conducting shell.Electrode forms in the mode of routine.
Each self-forming cladding of superlattice layer, described cladding be by alternately ternary and quaternary material such as AlGaN and InGaN, or the InGaAlN material forms with many layers of different molfractions, and the thickness of each cladding is all at it below critical thickness.In an illustrative embodiment, superlattice layer can comprise: about 200 layers are right.For superlattice, if use ternary system, as AlGaN and InGaN, the AlGaN layer will be under the tensile stress, and the InGaN layer will be under the compression, and by making these layers alternately, stress is compensated at place, AlGaN/InGaN bed boundary, the result is to have defective still less and increased reliability in layer.Superlattice layer has opposite conductive layer, and clips the quantum well active layer, described active layer can single trap or the form of many traps finish.By the suitable selection to molfraction, the lattice constant of AlGaN layer can be arranged in the lattice constant that is lower than adjacent GaN layer, and, the lattice constant of InGaN layer can be arranged in the lattice constant that is higher than adjacent GaN layer.Final result is: formed the extremely superlattice layer that has equilibrium stress of the lattice constant of adjacent GaN layer in a basic balance, therefore, reduced widely because the formation of defective due to the stress.
In first embodiment of the invention, semiconductor structure-can be is laser diode-comprise as follows for example: form GaN first cladding of first conductivity type on GaN or other base material, then, form first superlattice layer with the first cladding same conductivity.Can think first superlattice layer of second cladding, can be by many layers to forming, these layers are to normally AlGaN and InGaN, or InGaN and InAlN.Form conducting shell then, this layer is the InGaN material normally, and has the conductivity type identical with first cladding, forms the normally quantum well active layer of InGaN material afterwards.Can utilize single quantum well or many (for example three pairs) quantum well design to form active layer.Another InGaN conducting shell forms on this active layer usually, but conductivity type is opposite with first cladding.
Form second superlattice layer then on conducting shell, this lattice layer plays the 3rd cladding and has the conductivity type opposite with first cladding.When utilizing first superlattice layer, second superlattice layer is made up of many layers usually, and for example AlGaN combines with InGaN, or InGaN combines with InAlN.Superlattice layer can comprise separately: about 200 supplementary material layers are right, but accurate quantity is not critical.GaN the 4th cladding forms on superlattice the 3rd cladding usually.Electrode forms in the mode of routine.
As mentioned above, super crystal lattice material is right to being selected from following material: Al
XalGa
1-xalN/In
XiGa
1-xiN and In
XayGa
1-xayN/In
XnAl
1-xnN.Utilize described structure, in first superlattice layer, Al
XalGa
1-xalThe N layer is under the tensile stress, and In
XiGa
1-xiThe N layer is under the compression, and the result is that in the respective sets stratification at the interface, stress can compensate mutually.Similarly, in second superlattice layer, Al
XalGa
1-xalThe N layer is under the tensile stress, and In
XiGa
1-xiThe N layer is under the compression, and the result is, in this superlattice, its at the interface stress also can compensate mutually.If select In
XayGa
1-xayN/In
XnAl
1-xnThe N material is right, and operation is identical.
In addition, can be to Al
XalGa
1-xalN/In
XiGa
1-xiN and In
XayGa
1-xayN/In
XnAl
1-xnThe N superlattice layer designs, so that better when limiting the light field in the active layer to such an extent that be used for separately the GaN of cladding such as fruit.By being increased in the laterally some optical confinement in active layer, the threshold electric current of device can descend.In addition, to Al
XalGa
1-xalN/In
XiGa
1-xiN and In
XayGa
1-xayN/In
XnAl
1-xnThe design of N superlattice layer will make that the absorption from the laser of active layer is minimum.Therefore, obtained the laser diode of low threshold electric current and fabricating low-defect-density.
By the material that is used for superlattice and active layer is selected, can finish first embodiment, and for base material and outer cladding, this embodiment can also comprise various replacement schemes.Particularly, the equipment of first embodiment can comprise: sapphire substrate, carborundum, GaN or the like.Superlattice layer can comprise Al
XalGa
1-xalN and In
XiGa
1-xiN, wherein xal is about 0.2 and xi is about 0.04 to maximum 0.2; Perhaps can comprise In
XayGa
1-xayN and In
XnAl
1-xnN, wherein xay is about 0.04 and xn is about 0.13.In addition, active layer can comprise In
XaGa
1-xaThe list of N material or Multiple Quantum Well.Preferably, the pass of variable xi and xa is xa＞xi.
In second embodiment of the invention, implement semiconductor structure once more based on the ternary material system.Wherein laser diode is that the second order of illustrative device comprises once more: with the first conductivity type GaN or similar first cladding suitable substrates together, superlattice second cladding of first conductivity type and can be list or Multiple Quantum Well for example be In
XaGa
1-xaThe quantum well active layer of N material.In addition, also conducting shell can be right after on each side that is formed on active layer, so that help restriction to light field, but they are unwanted in all embodiments.When utilizing first superlattice layer, superlattice second cladding can be Al
XalGa
1-xalN/In
XiGa
1-xiN, In
XayGa
1-xayN/In
XnAl
1-xnN or its equivalent.
Then, form conductivity type superlattice three cladding opposite, but in this embodiment, only comprise 14 to 50 Al with first cladding
XalGa
1-xalN/In
XiGa
1-xiN, In
XayGa
1-xayN/In
XnAl
1-xnThe layer of N or its equivalent material is right.Then, form current barrier layer on superlattice the 3rd cladding, and form window in current barrier layer, described barrier layer exposes a part of superlattice the 3rd cladding.Then, on current barrier layer, form superlattice the 4th cladding, and can be that about 200 layers are right.Window in current barrier layer provides the interface between superlattice the 4th cladding and superlattice the 3rd cladding.Superlattice the 4th cladding has identical conductivity type with superlattice the 3rd cladding.The same with first embodiment, xal determines the molfraction (utilizing this material as an example) of AlN, and xi and xa determine the InN molfraction, and the pass of xi and xa is xa＞xi.At last, on the 4th cladding, form for example the 5th cladding of GaN, and form electrode in a usual manner.
Be similar to first embodiment, the lattice constant of AlGaN in superlattice layer (or equivalent) is less than the lattice constant of GaN cladding, and in superlattice layer the lattice constant of InGaN greater than the lattice constant of GaN cladding.In this case, the AlGaN layer will be under the tensile stress, and the InGaN layer will be under the compression, and this will make the stress in the supplemental layers compensate mutually at place, AlGaN/InGaN bed boundary again.Similarly, if when GaN being used for cladding comparing, the AlGaN/InGaN superlattice layer will be provided at active layer interior focusing field and better limit.In addition, will cause the threshold electric current that reduces in the some optical confinement of laterally in active layer, improving.Because the molfraction xa of InN is greater than the molfraction xi of InN, because the AlGaN/InGaN superlattice layer does not absorb the laser from InGaN single quantum well active layer, therefore, the threshold electric current of reduction also is possible.This will make that the band-gap energy of InGaN becomes greater than the band-gap energy of InGaN single quantum well active layer in the AlGaN/InGaN superlattice layer.Final result is: constituted the semiconductor structure with low threshold electric current and fabricating low-defect-density.
Be understandable that by aforementioned main difference between first and second embodiments is: added current barrier layer, in above-mentioned illustrative embodiment, this layer is clipped between less superlattice layer and the big superlattice layer.In above-mentioned illustrative was arranged, semiconductor structure had Al
XbGa
1-xbN current barrier layer, this layer have by its formation Al
XalGa
1-xalN/In
XiGa
1-xiThe window area of N superlattice the 3rd cladding, wherein electric current obstruction layer has and Al
XalGa
1-xalN/In
XiGa
1-xiThe conductivity type that the N superlattice layer is opposite, wherein, xb determines the molfraction of AlN, and the pass of xb and xal is xb＞xal.So that form the window district in superlattice layer, effectively refractive index will be greater than the refractive index beyond the window district in the window district by utilizing described current barrier layer.This helps in side direction is limited in light field activity under the window district.Because the molfraction xb of AlN is greater than the molfraction xal of superlattice layer beyond the window district, therefore, effective refractive index will increase in the refractive index window district.In addition, because the conductivity type of AlGaN current barrier layer is different from AlGaN/InGaN superlattice cladding, therefore, injection current will be limited in the window district.This will make that the injected current density in the active layer becomes enough big in the window district, so that obtain laser generation.Therefore, utilize to have the described current barrier layer that enters window in the superlattice layer, can access the laser diode of single lateral mode operation.
The 3rd embodiment of the present invention structurally is similar to first embodiment, implements but utilize the quaternary material system to substitute above-mentioned ternary material system.In such embodiments, the In of first conductivity type
1-x1-y1Ga
X1Al
Y1The cladding of N material is formed on GaN or other base material.Then, as second cladding, form first superlattice layer of first conductivity type, this layer comprises In
1-x2-y2Ga
X2Al
Y2N and In
1-x3-y3Ga
X3Al
Y3The N material.In cladding, with In
1-x2-y2Ga
X2Al
Y2The lattice constant of N material is chosen as greater than In
1-x1-y1Ga
X1Al
Y1The lattice constant of N material, and with In
1-x3-y3Ga
X3Al
Y3The lattice constant of N material is chosen to greater than In
1-x1-y1Ga
X1Al
Y1The lattice constant of N material.Forming then for example is the quantum well active layer of InGaN material, and described quantum well can be list or Multiple Quantum Well; Form second superlattice layer of opposite conductivity type then.Second superlattice layer can for example comprise: In
1-x4-y4Ga
X4Al
Y4N and In
1-x5-y5Ga
X5Al
Y5N, wherein, In
1-x4-y4Ga
X4Al
Y4The lattice constant of N is greater than In
1-x1-y1Ga
X1Al
Y1The lattice constant of N material, and described In
1-x5-y5Ga
X5Al
Y5The lattice constant of N is less than In
1-x1-y1Ga
X1Al
Y1The lattice constant of N material.Second superlattice layer plays the 3rd cladding.Form the 4th cladding with the first cladding opposite conductivity type then, its material is In normally
1-x6-y6Ga
X6Al
Y6The N material.X1, x2, x3, x4, the value of x5 and x6 is determined the GaN molfraction and y1, y2, y3, y4, y5 and y6 determine the molfraction of AlN.The same with first and second embodiments, can replenish conducting shell in certain embodiments, helping the restriction light field, and if replenish, be formed directly on arbitrary of active layer.
In the 3rd embodiment, the same with first and second embodiments, in first superlattice layer, In
1-x2-y2Ga
X2Al
Y2The N layer is under the tensile stress, and In
1-x3-y3Ga
X3Al
Y3The N layer is under the compression, and the result is, at In
1-x2-y2Ga
X2Al
Y2N layer and In
1-x3-y3Ga
X3Al
Y3Place, N bed boundary, stress can compensate mutually.Similarly, in second lattice layer, In
1-x4-y4Ga
X4Al
Y4The N layer is under the tensile stress, and In
1-x5-y5Ga
X5Al
Y5The N layer is under the compression, and the result is, at In
1-x4-y4Ga
X4Al
Y4N layer and In
1-x5-y5Ga
X5Al
Y5Place, N bed boundary, stress can compensate mutually.
The InGaN superlattice layer is designed, so that light field is limited in the active layer, and than GaN being used for the better of cladding separately.By being increased in the laterally some optical confinement in active layer, can reduce the threshold electric current of device.In addition preferably, also the InGaAlN superlattice layer is designed to not absorb laser from active layer.Therefore, obtained the laser diode of low threshold electric current and fabricating low-defect-density.
The 4th embodiment of the present invention mainly comprises: the quaternary material of the 3rd embodiment, and the general structure of second embodiment, promptly, on arbitrary of current barrier layer, use superlattice third and fourth cladding, by the window in current barrier layer, will make to allow the interface between these superlattice layers.
The following detailed description according to the present invention, and the accompanying drawing shown in following, summarizing aforementioned viewpoint of the present invention will be more readily understood.
Summary of drawings
Fig. 1 shows the laser diode of prior art.
Fig. 2 shows the cross-sectional view that the present invention simplifies.
Fig. 3 shows the simplification cross-sectional view of the first embodiment semiconductor device.
Fig. 4 A-4C shows the series of steps for preparing the simplification of semiconductor structure according to first embodiment.
Fig. 5 shows the relation between the excessive stress and In content in the superlattice cladding.
Fig. 6 shows the power output that depends on the first embodiment injected current density.
Fig. 7 shows the dependence of power output to the 3rd embodiment injected current density.
Fig. 8 shows the relation between the excessive stress and In content in the superlattice cladding.
Fig. 9 shows the excessive stress of InAlN layer in the superlattice cladding and the relation between the In content.
Figure 10 shows the simplification cross-sectional view according to the semiconductor device of second embodiment.
Figure 11 A-C shows a series of simplification steps that prepare semiconductor laser diode according to second embodiment.
Figure 12 shows outer room effective refractive index poor (Dn) and the 3rd relation that clads between the layer thickness (dp) in the window district.
Figure 13 shows the dependence of power output to the injected current density of second embodiment.
Figure 14 shows outer room effective refractive index poor (Dn) and the 3rd relation that clads between the layer thickness (dp) in the window district.
Figure 15 shows the dependence of power output to the injected current density of the 4th embodiment.
Figure 16 shows the simplification cross-sectional view according to the semiconductor device of the 3rd embodiment.
Figure 17 shows the simplification cross-sectional view according to the semiconductor device of the 4th embodiment.
Figure 18 shows the HFET that constitutes according to the present invention.
Figure 19 shows the hetero-junction bipolar transistor that constitutes according to the present invention.
Figure 20 shows the photodiode that constitutes according to the present invention.
Figure 21 shows the phototransistor that constitutes according to the present invention.
Detailed description of the invention
At first, wherein show semiconductor structure according to common form of the present invention with reference to figure 2.Form first cladding 105 on base material 100, described base material can be GaN, sapphire, carborundum or other suitable substrates.First cladding has the conductivity type identical with base material usually.Form second cladding 110 then on first cladding 105, wherein, the conductivity type of second cladding is identical with first cladding.
The composition layer 15 of superlattice second cladding 110 is under the antagonism stress, and therefore, ground floor is under the tensile stress, and adjacent layer is under the compression.For described material, every layer all is lower than its critical thickness, and has therefore avoided the cracking of material internal.The right quantity of layer that comprises superlattice can be widely 20 or still less change between greater than 200, and the layer that wherein increases thickness will provide bigger some optical confinement, but need the electrically anti-and thermal endurance that increases, therefore need to increase heating.
After superlattice layer 110 is made, on superlattice layer 110, increase active layer 120, and superlattice the 3rd cladding 125 of increase and superlattice layer 110 conductivity type complementations.In addition, what also will go through below is also can equip conducting shell on superlattice layer 110.In this case, on the active layer top, increase by second conducting shell, then, increase superlattice the 3rd cladding 125.Conducting shell will have and be adjacent the identical conductivity type of superlattice layer.
After superlattice layer 125 is equipped with, form the 4th cladding 130, its conductivity type is identical with layer 125.Then, for example below base material 100 and above the 4th cladding 130, form electrode pair 135 and 140 in the mode of routine.
Be used for the material of superlattice layer by suitable selection, tensile stress and compression can be carried out balance in these layers, thereby make defect concentration become minimum.In addition, because the refringence between superlattice cladding and the active layer is greater than the refringence between conventional GaN and the active layer, therefore,, light field better can be limited in the active layer if compare when using for example single GaN cladding.
Then with reference to figure 3 and 4A-4C, Fig. 3 and 4A-4C at length show first embodiment of the semiconductor structure according to the present invention.For for simplicity, when illustrating first embodiment of the invention, elect laser diode the semiconductor structure of illustrative as, and illustrate with the cross-sectional view of simplifying.On n type GaN base material 150, form n type GaN first cladding 155 of about 0.5 micron thickness.Form superlattice second cladding 160 of n section bar material then.For the device of the first embodiment illustrative, the right quantity of its layer can be about 200.The material that is used for superlattice layer can be to have appropriate crystal lattice constant, any of some kinds of combinations such as conductivity type.As below will going through, the material of illustrative is Al
0.2Ga
0.8N/In
0.04Ga
0.96N, or Al
0.2Ga
0.8N/In
0.2Al
0.8N or In
0.04Ga
0.96N/In
0.13Al
0.87N.Superlattice are formed layer typical thickness separately and are about 20 dusts, but thickness can reasonably change in the tolerance accurately, as long as be no more than the critical thickness that produces dislocation.
After preparation superlattice second cladding 160, if desired, can form the In of about 35 dust thickness
0.02Ga
0.98The n type conducting shell 165 of N material, but at least some embodiments, do not need to use conducting shell.Then, form quantum well active layer 170, described trap can be list or Multiple Quantum Well.If the use Multiple Quantum Well although accurate configuration can change according to purposes, finds that three pairs of configurations will be desirable.For single trap device, described layer 170 can comprise: the thick In of about 35 dusts
0.15Ga
0.85The N material.If preferred many traps quantum layer, layer 170 can comprise: three couples of In
0.15Ga
0.85N/In
0.03Ga
0.98N (35 dusts are thick) material.If the use conducting shell for example, forms the thick In of about 35 dusts
0.03Ga
0.97Second conducting shell of N material, its conductivity type is opposite with first conducting shell.Then, form superlattice the 3rd cladding 180 of p section bar material.The same with layer 160, superlattice layer 180 can comprise: 200 couples of In
0.2Ga
0.8N/In
0.04Ga
0.96N material, thickness are generally 20 dusts, perhaps can be Al
0.2Ga
0.8N/In
0.2Al
0.8N or material In
0.04Ga
0.96N/In
0.13Al
0.87N.Form p type GaN the 4th cladding 185 at last, about 0.5 micron usually of its thickness.Mode with routine forms the electrode pair (not shown).
In order to be the blue light of 450nm, the molfraction of InN in the active layer 170 is arranged on about 0.15 from active layer 170 emission wavelengths.Charge carrier mainly injects and in active layer 170 combination again, this will cause blue emission from n type base material 150 and p type GaN the 4th cladding 185.
Superlattice layer 160 and 180 plays a part light field is limited in horizontal, and it will be better than conventional GaN cladding, and this is greater than the refringence between active layer and the conventional GaN layer because of the refringence between active layer and the cladding.Strong some optical confinement will form the laser diode of low threshold electric current in active layer.
For generation of defects is minimized, strain compensation superlattice layer 160 and 180 is used for cladding, to substitute conventional AlGaN cladding or simple GaN cladding.In superlattice structure of the present invention, the thickness that comprises each composition layer of superlattice layer maintains below the critical thickness, perhaps is about 20 dusts usually.This will reduce the stress in the cladding greatly, and therefore make the defect concentration in this layer become minimum.Right for each material that in superlattice layer, uses, wherein layer of material, for example Al
0.2Ga
0.8N is under the tensile stress, and another layer, for example In
0.04Ga
0.96N is under the compression.Usually with a kind of material (Al for example
0.2Ga
0.8N) be chosen as its lattice constant less than GaN, and another kind of material (In for example
0.04Ga
0.96N) lattice constant is greater than GaN, and at the interface, stress can be compensated between layer and layer.This will stop stress accumulation, and reduce defect concentration with respect to the GaN cladding of routine.
As previously mentioned, the combination of some kinds of materials also can be used in superlattice layer.The combination of materials of each illustrative--Al
0.2Ga
0.8N/In
0.04Ga
0.96N/In
0.2Al
0.8N, or In
0.04Ga
0.96N/In
0.13Al
0.87N--is discussed below.
If utilize Al
0.2Ga
0.8N/In
0.04Ga
0.96N combination, Fig. 5 shows the relation between the In content of InGaN layer in stress too much in the waveguiding structure and the AlGaN/InGaN superlattice cladding.In AlGaN/InGaN superlattice cladding, the In content of InGaN layer, other structural parameters are fixed.For this reason, too much stress is defined as do not have difference between maximum stress among the epilayer of waveguide under the dislocation and the effective stress relevant with dislocation line at waveguiding structure.If too much stress be on the occasion of, so, when dislocation produces in waveguiding structure, strain energy will become than when dislocation littler during generation in waveguiding structure not.This means: when dislocation produces in waveguiding structure, compare with not producing in waveguiding structure, this structure will be more stable.
Yet, if too much stress becomes negative value, so opposite situation will take place: when dislocation does not produce in waveguiding structure, will become littler than when dislocation produces in waveguiding structure of strain energy.This means: when comparing with the situation that dislocation produces in waveguiding structure, when dislocation does not produce in waveguiding structure, this structure will be more stable.As shown in Figure 5, when In content equals 0.04, too much stress will become minimum.Therefore, in the structure of embodiment shown in Figure 3, the InN molfraction of InGaN layer in the AlN molfraction of AlGaN layer in the superlattice cladding and the superlattice cladding is separately positioned on 0.2 and 0.4.
In addition, if with Al
0.2Ga
0.8N/In
0.04Ga
0.96The N superlattice layer is as cladding, and laterally, the some optical confinement in active layer will be greater than only with the situation of GaN cladding as the cladding material, this be because, Al
0.2Ga
0.8N/In
0.04Ga
0.96The mean refractive index of N superlattice cladding is less than the mean refractive index of GaN cladding, and this will obtain bigger refringence between cladding and active layer.
Fig. 6 shows the light-current characteristics of the first embodiment laser diode, and wherein super crystal lattice material is Al
0.2Ga
0.8N/In
0.04Ga
0.96N also uses single quantum well.Laser diode is 1% pulse current driving by duty cycle (duty cycle).The threshold current density is 5.2kA/cm
2, this value is about half of laser diode threshold current density, and described diode has the cladding of only being made by GaN.Fig. 7 shows the light-current characteristics of the laser diode that constitutes according to first embodiment, but uses the Multiple Quantum Well design.Laser diode is 1% pulse current driving by duty cycle.The threshold current density is 4.2kA/cm
2, this value also is about half of Multiple Quantum Well laser diode threshold current density, and described diode only is used for GaN its cladding.
Second kind of illustrative combination of the material of superlattice layer 160 and 180 usefulness is Al
0.2Ga
0.8N/In
0.2Al
0.8N.With Al
0.2Ga
0.8N/In
0.2Al
0.8N is used under the situation of superlattice layer, and stress equilibrium is different slightly.Fig. 8 shows the relation between the In content of InAlN layer in too much stress in the waveguiding structure and the AlGaN/InAlN superlattice cladding.In AlGaN/InAlN superlattice cladding, the In content of InAlN layer, other structural parameters are fixed.As shown in Figure 8, equal at In content under 0.2 the situation, too much stress will become minimum.Therefore, if with Al
0.2Ga
0.8N/In
0.2Al
0.8N is used for superlattice layer, in the superlattice cladding in the AlN molfraction of AlGaN layer and the superlattice cladding InN molfraction of InAlN layer be separately positioned on 0.2 and 0.2 compensated by adjacent composition layer so that guarantee strain.
In addition, for wherein with Al
0.2Ga
0.8N/In
0.2Al
0.8N is as under the situation of superlattice layer, and laterally, it only is the GaN cladding that the restriction of light field in active layer will be better than, and this is because Al
0.2Ga
0.8N/In
0.2Al
0.8The mean refractive index of N superlattice layer is less than the mean refractive index of GaN cladding.
The third illustrative combination that is used for the material of superlattice layer 160 and 180 is In
0.04Ga
0.96N/In
0.13Al
0.87N.Under this combination, In
0.13Al
0.87The N layer is under the tensile stress, and In
0.04Ga
0.96The N layer is under the compression.Therefore, stress is at In
0.13Al
0.87N layer and In
0.04Ga
0.96Being compensated at the interface between the N layer.The relation of lattice constant is In
0.04Ga
0.96N＞GaN＞In
0.13Al
0.87N.
The same with previous combination of materials, because the difference of material, so stress equilibrium will change.Fig. 9 shows in the waveguiding structure too much the relation between the In content of InAlN layer in stress and the InGaN/InAlN superlattice cladding.In InGaN/InAlN superlattice cladding, the In content of InAlN layer, other structural parameters are fixed on above-mentioned numerical value.As shown in Figure 9, the In content in the InAlN layer is under 0.13 the situation, and too much stress will become minimum.Therefore, in the structure of the 9th embodiment shown in Figure 9, be compensate for strain, the AlN molfraction with InAlN layer in the InN molfraction of InGaN layer in the superlattice cladding and the superlattice cladding is arranged on 0.04 and 0.87 respectively.
In addition, if with In
0.04Ga
0.96N＞GaN＞In
0.13Al
0.87N is used for the superlattice cladding, and laterally, the light field restriction in active layer will be better than the cladding that only uses GaN.In
0.04Ga
0.96N＞GaN＞In
0.13Al
0.87The mean refractive index of N superlattice cladding is less than the mean refractive index of GaN cladding, and this will obtain bigger refringence between cladding and active layer, and this situation occurs in when only using the GaN cladding.
Follow with reference to Figure 10 and Figure 11 A-11C second embodiment that the present invention may be better understood.The same with the embodiment of Fig. 3, Figure 10 is the simplification cross-sectional view of the second embodiment semiconductor laser diode, and Figure 11 A-11C shows the modification of the simplification of the preparation process that produces Figure 10 structure.On n type GaN base material 300, form n type GaN first cladding 305 of about 0.5 micron thickness, be to form right n type superlattice second cladding 310 of layer by 200 approximately then.Then, form the thick In of about 35 dusts
0.02Ga
0.98The N conducting shell then is a quantum well active layer 320.Quantum well active layer (about 35 dusts) can be list or Multiple Quantum Well.If use the single quantum well design, so, active layer comprises In usually
0.15Ga
0.85N.If use the Multiple Quantum Well design, so, can be with three couples of In
0.15Ga
0.85N/In
0.03Ga
0.98The N Multiple Quantum Well prepares active layer, wherein about 35 dusts of the thickness of each layer.Then, in certain embodiments, can form the thick In of about 35 dusts
0.03Ga
0.97 N conducting shell 325.
Then, significantly distinguishing with first embodiment is to form p type superlattice the 3rd cladding 330.Yet described layer 330 only comprises about 25 pairs usually and forms layer, about 20 dusts of every layer thickness.Then, form the thick p type Al of about 100 dusts
0.22Ga
0.78N current barrier layer 335.Then, in current barrier layer 335, form strip window 340, so that expose portion the 3rd cladding 330.Form p type the 4th superlattice cladding 345 then, it comprises about 200 pairs usually and forms layer.At last, form P type GaN the 5th cladding 350 of about 0.5 micron thickness.Can form electrode with usual manner.
The same with first embodiment, can prepare superlattice layer 310,330 and 345 with the some different combinations of material, they can comprise: Al
0.2Ga
0.8N/In
0.04Ga
0.96N, Al
0.2Ga
0.8N/In
0.2Al
0.8N, or In
0.04Ga
0.96N/In
0.13Al
0.87N.The manipulation of these materials is with the same in conjunction with the discussion of first embodiment, and different is the manipulation to current barrier layer that goes through below.Therefore, although be understandable that, use the mode identical with first embodiment, each combination all is acceptables, and the remaining discussion part of second embodiment will be utilized Al
0.2Ga
0.8N/In
0.04Ga
0.96N as an example.
For emission wavelength from active layer 320 is the blue light of 450 nanometers, InN molfraction in the active layer 320 is arranged on 0.15.In order to obtain the manipulation of basic transverse mode, window breadth is set to 2mm.
Vibrate in order to have one-sided mode (single lateral mode oscillation), the AlN molfraction of current barrier layer 335 is set to greater than p type Al
0.2Ga
0.8N/In
0.04Ga
0.96N superlattice the 4th cladding 350.When the AlN of current barrier layer 335 molfraction and the 4th cladding identical, the refractive index in bar will reduce owing to plasma effect, and will form waveguide, and the result can not produce one-sided mode to vibrate.When the AlN of current barrier layer 335 molfraction is lower than p type Al
0.2Ga
0.8N/In
0.04Ga
0.96During N superlattice the 4th cladding 345, the side direction mode is vibrated and is become unstable.In this case, the AlN molfraction of current barrier layer 335 is arranged on 0.22, this value is higher than Al
0.2Ga
0.8N/In
0.04Ga
0.96N superlattice the 4th cladding 345.In addition, the thickness of the 3rd cladding 330 (dp) also will influence in the window district and the window district outside effective refractive index poor (Δ n).When the dp value is big, Δ n will diminish.On the other hand, when dp value hour, it is big that Δ n will become.At Δ n is that light field will be stronger in the restriction of side direction under the situation of big value, and this will cause spatial hole (spatial holes) burning, to cause the light field distortion.For the described device that utilization is used for optic pick-up system, the distortion of light field will be conclusive problem.If Δ n is little value, light field will be in lateral distribution be gone into active layer outside the window district.In this case, the active layer beyond in the window district activates the charge carrier that is injected into greatly, and the result is, light field will suffer optical loss, and this will make the threshold electric current increase.
Figure 12 shows the relation between Δ n and the dp.As shown in figure 12, when dp becomes big, Δ n will diminish.For in side direction, suitably light field is limited in the window district, the value of Δ n is arranged on about 6 * 10
-3In second embodiment, in order to obtain 6 * 10
-3Δ n value, dp is set to 0.1mm.
According to the structure of second embodiment shown in Figure 10, by p type Al
0.2Ga
0.8N/In
0.04Ga
0.96The electric current that N superlattice the 4th cladding 345 injects is limited in the window 340, and the laser generation of the 320 generation 450nm bandwidth of the quantum well active layer below being arranged in window.As previously mentioned, in superlattice layer, utilize AlGaN to form layer and will help light field is limited in laterally consumingly.Strong some optical confinement will produce the laser diode of low threshold electric current in active layer.
Figure 13 shows the light-current characteristics of the laser diode that constitutes according to second embodiment that has single quantum well.Laser diode is 1% pulse current driving by duty cycle.The threshold current density is 4.0kA/cm
2, this value is about half of laser diode threshold current density, and described diode has the cladding of only being made by GaN.
Under the situation of utilizing the Multiple Quantum Well active layer, the relation between Δ n and dp will change slightly.The same with Fig. 2, the relation shown in Figure 14 shows: when dp becomes big, Δ n will diminish.In order suitably light field to be limited in the window district, the value of Δ n is arranged on about 6 * 10 in side direction
-3In second embodiment, in order to obtain 6 * 10
-3Δ n value, dp is set to 0.08mm.
Figure 15 shows the light-current characteristics of the second embodiment laser diode, but utilizes the Multiple Quantum Well active layer.This device will cause in (promptly increasing) some optical confinement of laterally improving in active layer, its improvement degree will above utilize the single quantum well active layer the degree that can reach.Therefore, the Multiple Quantum Well device can further make the threshold electric current reduce.It is the laser diode that 1% pulse current drives that Figure 15 shows by duty cycle.The threshold current density is about 3.8kA/cm
2, this value also is about half of the laser diode threshold current density that has the GaN cladding.
Below with reference to Figure 16, the 3rd embodiment that the present invention may be better understood.Embodiment shown in Figure 16 is different from the embodiment shown in Fig. 3, and wherein, this embodiment is used the ternary system of quaternary material system rather than Fig. 3.Therefore, in the 3rd embodiment of the present invention,--for example can be laser diode--comprise as follows semiconductor structure: on GaN or other base material 400, form In
1-x1-y1Ga
X1Al
Y1The cladding 405 of N material first conductivity type.Then, form superlattice second cladding 410 of first conductivity type, this layer comprises: In
1-x2-y2Ga
X2Al
Y2N and In
1-x3-y3Ga
X3Al
Y3The N material.In cladding, with In
1-x2-y2Ga
X2Al
Y2The lattice constant of N material is hanked greater than In
1-x1-y1Ga
X1Al
Y1The lattice constant of N material, and with In
1-x3-y3Ga
X3Al
Y3The lattice constant of N material is hanked less than In
1-x1-y1Ga
X1Al
Y1The lattice constant of N material.In certain embodiments, can on superlattice layer 410, form the conducting shell 415 of any suitable material.Then, form quantum well active layer 420, described quantum well active layer can single trap or the design of many traps.Then, in some embodiment at least, form conducting shell 425.Form superlattice the 3rd cladding 430 of opposite conductivity type then.Described superlattice the 3rd cladding for example can comprise: In
1-x4-y4Ga
X4Al
Y4N and In
1-x5-y5Ga
X5Al
Y5The N material, wherein, In
1-x4-y4Ga
X4Al
Y4The lattice constant of N material is greater than In
1-x1-y1Ga
X1Al
Y1The lattice constant of N material, and In
1-x5-y5Ga
X5Al
Y5The lattice constant of N material is less than In
1-x1-y1Ga
X1Al
Y1The lattice constant of N material.Form normally In then
1-x6-y6Ga
X6Al
Y6Material, with the 4th cladding 435 of the first cladding opposite conductivity type.X1, x2, x3, x4, x5 and x6 limit the molfraction of GaN, and y1, y2, y3, y4, y5 and y6 limit the molfraction of AlN.
Utilize described structure, in superlattice layer, In
1-x2-y2Ga
X2Al
Y2The N layer is under the compression and In
1-x3-y3Ga
X3Al
Y3The N layer is under the tensile stress, and the result is, at In
1-x2-y2Ga
X2Al
Y2N layer and In
1-x3-y3Ga
X3Al
Y3The N layer at the interface, stress will be compensated mutually.Similarly, in second superlattice layer, In
1-x4-y4Ga
X4Al
Y4The N layer is under the compression and In
1-x5-y5Ga
X5Al
Y5The N layer is under the tensile stress, and the result is, at In
1-x4-y4Ga
X4Al
Y4N layer and In
1-x5-y5Ga
X5Al
Y5The N layer at the interface, stress can be compensated mutually.
The same with previous embodiment, the InGaAlN superlattice layer is designed, so that light field is limited in the active layer, it is used for the better of cladding such as fruit with GaN.By increasing the some optical confinement in the horizontal active layer, the threshold electric current of device can descend.In addition, can design, so that do not absorb laser from active layer to the InGaAlN superlattice layer.Therefore, low threshold electric current and low defect concentration have been obtained.
With reference to Figure 17, the 4th embodiment that the present invention may be better understood.The 4th embodiment is used the quaternary material system of the 3rd embodiment, but different is to utilize the structure of second embodiment shown in Figure 10 and Figure 11 A-11C.On GaN or other base material 500, form In
1-x1-y1Ga
X1Al
Y1The cladding 505 of first conductivity type of N material.Then, form superlattice second cladding 510 of first conductivity type, this layer comprises: In
1-x2-y2Ga
X2Al
Y2N and In
1-x3-y3Ga
X3Al
Y3The N material.In cladding, with In
1-x2-y2Ga
X2Al
Y2The lattice constant of N material is hanked greater than In
1-x1-y1Ga
X1Al
Y1The lattice constant of N material, and with In
1-x3-y3Ga
X3Al
Y3The lattice constant of N material is hanked less than In
1-x1-y1Ga
X1Al
Y1The lattice constant of N material.In certain embodiments, can on superlattice layer 510, form the conducting shell 515 of any suitable material.Then, form quantum well active layer 520, described quantum well active layer can single trap or the design of many traps.Then, the same with previous embodiments, in some embodiment at least, form the conducting shell 525 of another opposite conductivity type.Form superlattice the 3rd cladding 530 of opposite conductivity type then.Described superlattice the 3rd cladding for example can comprise: In
1-x4-y4Ga
X4Al
Y4N and In
1-x5-y5Ga
X5Al
Y5The N material, wherein, In
1-x4-y4Ga
X4Al
Y4The lattice constant of N material is greater than In
1-x1-y1Ga
X1Al
Y1The lattice constant of N material, and In
1-x5-y5Ga
X5Al
Y5The lattice constant of N material is less than In
1-x1-y1Ga
X1Al
Y1The lattice constant of N material.Superlattice layer 530 can be about 25 pairs and form layer.Form p type Al then
0.22Ga
0.78The current barrier layer of N material, about 100 dusts of its thickness.In current barrier layer 532, form the strip window then, so that expose superlattice layer 530.Form then with superlattice layer 330 same materials but about 20 pairs of superlattice the 4th claddings 535 of forming layer.At last, use mode as hereinbefore to form the 5th cladding.Similarly, can form electrode pair in a usual manner.
Then, the figure shows the HFET that forms by method and structure of the present invention with reference to Figure 18.At first on GaN base material 600, form the i-GaN cladding 605 of about 0.5 micron thickness, on it, form the thick n-type channel layer 610 of about 100 dusts then.Form about five pairs of superlattice layers 615 of forming layer more thereon, about 20 dusts of every layer thickness, its material is Al
0.2Ga
0.8N (6 layers)/n-type In
0.04Ga
0.96N (5 layers).Then, on superlattice layer 615, form source electrode, drain and gate 620,625 and 630.The nitride material of III-th family, especially GaN and AlN, it is the material that the high energy electron device that is used for operating under high power and hot conditions is wished, this is that (GaN is 3.5eV because GaN and AlN have wideer band gap, AlN is 6.2eV), therefore, will produce higher breakdown electric field, and higher saturated velocity.This is respectively and AlAs, GaAs, and Si (2.16eV, 1.42eV is with 1.12eV) compares the conclusion that is drawn.Therefore, utilize the field-effect transistor (FETs) of AlGaN/GaN material to be used for the microwave power transistor field by extensive the exploration.
Below with reference to Figure 19, wherein show heterojunction bipolar transistor formed according to the present invention.GaN base material 650 provides the basis that forms superlattice collector layer 655 thereon.Form p type GaN base layer 660 then, and then form superlattice emitter layer 665.Form collector electrode, base stage and emitter 670,675 and 680 afterwards.Figure 19 shows the embodiment of heterojunction bipolar transistor (HBT).At first on GaN base material 650, form 100 pairs of n-types, Al that 20 dusts are thick
0.2Ga
0.8N (101 layers)/n-type, the In that 20 dusts are thick
0.04Ga
0.96N (100 layers) superlattice collector layer forms the p type GaN base layer of 50 nanometer thickness then.Then, as emitter, form about 80 pairs, n-type, Al that 20 dusts are thick
0.2Ga
0.8N (81 layers)/n-type, the In that 20 dusts are thick
0.04Ga
0.96N (80 layers) superlattice layer.Stress between AlGaN layer and the InGaN layer will compensated at the interface mutually, is reduced with the defective that causes generation, and this will produce high-quality heterojunction AlGaN/GaN.The band gap of AlGaN/GaN superlattice emitter layer is greater than the band gap of GaN base layer, to cause, the hole that produces in p-type base layer will well be limited in the base layer, this be because, compare with the valence band of GaN homogeneous knot bipolar transistor, between GaN and AlGaN/InGaN superlattice layer, have bigger discontinuous valence band.Therefore, having obtained big electric current between base current and collector current amplifies.In addition, as mentioned above, the band gap of AlGaN/InGaN superlattice layer and GaN is bigger, and to cause, transistor can be used as the high temperature crystal pipe.Be understandable that also that in addition although aforesaid embodiment is used for emitter and collector with superlattice layer, in all examples, this is two-layer needn't to be the superlattice type, and as collector electrode or emitter, can use single superlattice layer.
Below with reference to Figure 20, can better understand embodiment of the present invention of implementing as photodiode.At first on n-type GaN base material 700, form n-type GaN first cladding 705 of about 0.5 micron thickness, form about 200 pairs of n-type superlattice second claddings 710 of forming layer then.Subsequently, form the thick In of about 35 dusts
0.02Ga
0.98 N conducting shell 715 is succeeded by quantum well active layer 720.Described active layer comprises In usually
0.15Ga
0.85N.Then, in certain embodiments, can replenish the thick In of about 35 dusts
0.03Ga
0.97 N conducting shell 325.
Then, visibly different with first embodiment is to form p-type superlattice the 3rd cladding.Yet layer 330 comprises about 25 pairs usually and forms layer, and every layer of about 20 dust are thick.Then, form the thick p-type Al of about 100 dusts
0.22Ga
0.78N current barrier layer 335.In current barrier layer 335, form strip window 340 subsequently, so that expose portion the 3rd cladding 330.Form electrode in a usual manner.
The same with first embodiment, can some kinds of different combinations of materials used prepare superlattice layer 710 and 730, and can comprise Al
0.2Ga
0.8N/In
0.04Ga
0.96N, Al
0.2Ga
0.8N/In
0.2Al
0.8N, or In
0.04Ga
0.96N/In
0.13Al
0.87N.The operation of these materials is described in second embodiment, and different is to remove cladding and the 3rd superlattice layer.In the present invention preferably arranged, window 340 can be shaped as the form of little outer race (outer ring).
With reference to Figure 21, wherein show the embodiment of the semiconductor device of implementing with different knot matter phototransistor of the present invention.Although other frequency comprises that blue light also can detect by improvement slightly, this device is particularly suitable for handling in ultraviolet (UV) scope.Because GaN and AlGaN have wide band gap and (for GaN3.5eV, are equivalent to the wavelength of 200 nanometers; For AlN6.2eV, be equivalent to the wavelength of 350 nanometers), therefore, they are attractive as the photodetector in ultraviolet light (UV) scope.Since direct band gap and the effectiveness of AlGaN in whole AlN alloy compositions scope, therefore, the tunability that AlGaN/GaN base UV photodetector will have high quantum efficiency and high cut-off wavelength.Yet the same with previous embodiments, the lattice constant of AlGaN is different from GaN, and therefore, defective tends to produce, and this will cause electric leakage.
As mentioned above, compensate by the counter stress at the interface at AlGaN and InGaN layer, make the band gap of effective band gap of superlattice layer greater than GaN itself simultaneously, the superlattice structure of strain compensation of the present invention can reduce the defective that exists in the prior art.Still with reference to the heterojunction phototransistor shown in Figure 21 (HPT), at first on GaN base material 800, form superlattice collector layer 805, this layer comprises about 120 pairs of n-types, Al that 20 dusts are thick
0.2Ga
0.8N (101 layers) and n-type, the In that 20 dusts are thick
0.04Ga
0.96N (100 layers) forms layer 805A and 805B.Then, form the p-type GaN base layer 820 of about 200 nanometer thickness, form superlattice emitter layer 825 subsequently, this layer comprises about 80 pairs of n-types, the thick Al of 20 dusts
0.2Ga
0.8N (81 layers) and n-type, 2 nanometer thickness In
0.04Ga
0.96The composition layer of N (80 layers).The same with the superlattice layer of each embodiment, at AlGaN layer and InGaN layer in this case, the stress of forming between the layer will be in its compensation mutually at the interface.The layer that these strains are compensated has obviously reduced generation of defects, has obtained high-quality heterojunction AlGaN/GaN.Form electrode 830 and 835 in a usual manner.
As mentioned above, the band gap of AlGaN/InGaN superlattice layer is greater than the band gap of GaN base layer.When handling, light shines from emitter side.If the photon energy of irradiates light is greater than the band-gap energy of GaN basic unit, but less than the band-gap energy of AlGaN/InGaN superlattice emitter layer, irradiates light will be transmitted through on the emitter layer, to cause light to be absorbed in the GaN base layer and to produce duplet and the hole is right.Owing to compare with the valence band in being present in GaN homogeneous knot phototransistor, between GaN layer and AlGaN/InGaN superlattice layer, there is bigger valence band, therefore, will better be limited in the base layer by the hole that light absorption produced in p-type GaN base layer.Compare with the situation of conventional homogeneous knot phototransistor, this will produce bigger emitter current again and better compensation in the base region.Therefore, can obtain high-quantum efficiency and highly sensitive UV photodetector, this means from input light to the high conversion efficiency of collector current.Detect in hope under the situation of other frequency, for example blue light, the GaN base layer can be substituted by InGaN simply.
Completely already described several embodiments of the present invention, it will be evident to one of ordinary skill in the art that, also existed many replacement schemes and equivalent without departing from the invention.Therefore, scope of the present invention is not limited to described explanation, and only is by appended limiting according to claims.
Claims (13)
1. semiconductor structure comprises:
The base material of first conductivity type and
Comprise many first and second and form the first right superlattice layer of layer; Described first forms layer comprises the material that is under the tensile stress, and the described second composition layer comprises the material that is under the compression; Compression and tensile stress compensate mutually at the interface at it.
2. semiconductor structure according to claim 1 comprises:
The active layer that on first superlattice layer, forms, described superlattice layer have first conductivity type and
With second superlattice layer of the first conductivity type complementation, this layer comprises many third and fourth and forms layer, and the 3rd layer comprises the material that is in tensile stress under, and the 4th form and layer comprise the material that is under the compression, and compression and tensile stress compensate mutually at the interface at it.
3. semiconductor structure according to claim 1, wherein base material is GaN, this semiconductor structure also comprises:
An i-GaN cladding that between the base material and first superlattice layer, forms and
The n-GaN channel layer that between this i-GaN cladding and first superlattice layer, forms.
4. semiconductor structure according to claim 1 also comprises base layer and emitter layer in addition, and wherein first superlattice layer comprises collector layer.
5. semiconductor structure according to claim 1 also comprises in addition:
That form in the above and with first cladding of base material same conductivity,
With second cladding of base material same conductivity,
Active layer and
Wherein first superlattice layer forms the 3rd cladding, and has the conductivity type with the conductivity type complementation of base material,
The barrier layer that forms on superlattice the 3rd cladding and have window therein, described window exposes part superlattice the 3rd cladding.
6. semiconductor structure according to claim 1, wherein, base material is that the GaN and first superlattice layer form collector layer, also comprises base layer and superlattice emitter layer in addition, they are made up of by the layer of forming of compensation strain many.
7. the preparation method of a semiconductor structure comprises:
The base material of first conductivity type is provided,
Formation is formed layer less than first of critical thickness, and this ground floor is under the tensile stress of predetermined amplitude,
Form first and to form second on the layer and form layer, this second is formed layer and is under the compression, and the amplitude that this stress and first is formed layer tensile stress is identical, and the result is, tensile stress and compression compensate mutually in forming layer.
8. transistor unit comprises:
At In
1-x1-y1Ga
X1Al
Y1On the semi-insulating layer of N layer, order forms: n-type In
1-x1-y1Ga
X1Al
Y1N conductive channel layer is by In
1-x2-y2Ga
X2Al
Y2N and In
1-x3-y3Ga
X3Al
Y3The n-type superlattice layer that N forms, wherein, described In
1-x2-y2Ga
X2Al
Y2The lattice constant of N is greater than described In
1-x1-y1Ga
X1Al
Y1The lattice constant of N, and In
1-x3-y3Ga
X3Al
Y3The lattice constant of N is less than described In
1-x1-y1Ga
X1Al
Y1The lattice constant of N, x1 wherein, x2 and x3 limit the molfraction of GaN, and y1, y2 and y3 limit the molfraction of AlN, and effective band gap of described superlattice layer is greater than In
1-x1-y1Ga
X1Al
Y1Effective band gap of N layer.
9. transistor unit comprises:
By In
1-x1-y1Ga
X1Al
Y1N and In
1-x2-y2Ga
X2Al
Y2The first conductivity type superlattice collector layer that N forms; The In of opposite conductivity type
1-x3-y3Ga
X3Al
Y3The N base layer; The In of first conductivity type
1-x1-y1Ga
X1Al
Y1N and In
1-x2-y2Ga
X2Al
Y2The N emitter layer; Wherein, described In
1-x2-y2Ga
X2Al
Y2The lattice constant of N is greater than described In
1-x3-y3Ga
X3Al
Y3The lattice constant of N, and In
1-x2y2Ga
X2Al
Y2The lattice constant of N is less than described In
1-x3-y3Ga
X3Al
Y3The lattice constant of N, all layers all order form, wherein, In
1-x3-y3Ga
X3Al
Y3The band gap of N is less than In
1-x1-y1Ga
X1Al
Y1N and In
1-x2-y2Ga
X2Al
Y2Effective band gap of N superlattice layer, and x1, x2 and x3 limit the molfraction of GaN, and y1, y2 and y3 limit the molfraction of AlN.
10. semiconductor laser diode comprises:
In at certain conductivity type
1-x1-y1Ga
X1Al
Y1On the N, order forms: by In
1-x2-y2Ga
X2Al
Y2N and In
1-x3-y3Ga
X3Al
Y3The superlattice layer of certain conductivity type that N forms, wherein, described In
1-x2-y2Ga
X2Al
Y2The lattice constant of N is greater than described In
1-x1-y1Ga
X1Al
Y1The lattice constant of N, and In
1-x3-y3Ga
X3Al
Y3The lattice constant of N is less than described In
1-x1-y1Ga
X1Al
Y1The lattice constant of N; By In
1-x4-y4Ga
X4Al
Y4N and In
1-x5-y5Ga
X5Al
Y5The superlattice layer of the opposite conductivity type that N forms, wherein, described In
1-x4-y4Ga
X4Al
Y4The lattice constant of N is greater than the lattice constant of material 1, and described In
1-x5-y5Ga
X5Al
Y5The lattice constant of N is less than In
1-x1-y1Ga
X1Al
Y1The lattice constant of N; The In of opposite conductivity type
1-x6-y6Ga
X6Al
Y6N; X1 wherein, x2, x3, x4, x5 and x6 limit the molfraction of GaN, and y1, y2, y3, y4, y5 and y6 limit the molfraction of AlN.
11. a semiconductor laser diode comprises:
GaN first cladding of certain conductivity type, the Al of described certain conductivity type
XalGa
1-xalN/ln
XiGa
1-xiN superlattice second cladding, Al
XaGa
1-xaN single quantum well active layer, the Al of opposite conductivity type
XalGa
1-xalN/In
XiGa
1-xiN superlattice the 3rd cladding, GaN the 4th cladding of opposite conductivity type, all layers all order form, and wherein, xal limits the molfraction of AlN, and xi and xa limit the molfraction of InN, and the pass of xi and xa is xa＞xi.
12. semiconductor laser diode according to claim 2, wherein, at described Al
XalGa
1-xalN/In
XiGa
1-xiForm the Al that has window in N superlattice the 3rd cladding
XbGa
1-xbN current barrier layer, and described Al
XalGa
1-xalN/In
XiGa
1-xiN superlattice the 3rd cladding has opposite conductivity type, and this layer comprises described Al
XbGa
1-xbThe N current barrier layer, wherein, xb limits the molfraction of AlN, and the pass of xb and xal is xb＞xal.
13. a semiconductor laser diode comprises:
GaN first cladding of certain conductivity type, the Al of described certain conductivity type
XalGa
1-xalN/In
XiGa
1-xiThe N superlattice second layer, InGaN Multiple Quantum Well active layer, the Al of opposite conductivity type
XalGa
1-xalN/In
XiGa
1-xiThe 3rd layer of N superlattice, GaN the 4th cladding of opposite conductivity type, all layers all order form, and wherein, xal limits the molfraction of AlN, and xi limits the molfraction of InN.
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| US27731999A | 1999-03-26 | 1999-03-26 | |
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| EP (1) | EP1183761A2 (en) |
| JP (1) | JP2002540618A (en) |
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| US5831277A (en) * | 1997-03-19 | 1998-11-03 | Northwestern University | III-nitride superlattice structures |
| JPH11154774A (en) * | 1997-08-05 | 1999-06-08 | Canon Inc | Surface light emission type semiconductor device, manufacture thereof, and display device using the same |
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2000
- 2000-03-01 JP JP2000608410A patent/JP2002540618A/en active Pending
- 2000-03-01 CN CN00805556A patent/CN1347581A/en active Pending
- 2000-03-01 EP EP00940681A patent/EP1183761A2/en not_active Withdrawn
- 2000-03-01 WO PCT/IB2000/000892 patent/WO2000058999A2/en active Search and Examination
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2002540618A (en) | 2002-11-26 |
| EP1183761A2 (en) | 2002-03-06 |
| WO2000058999A2 (en) | 2000-10-05 |
| WO2000058999A9 (en) | 2002-08-29 |
| WO2000058999B1 (en) | 2001-08-02 |
| WO2000058999A3 (en) | 2001-01-04 |
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