WO2000058999A3 - Semiconductor structures having a strain compensated layer and method of fabrication - Google Patents

Semiconductor structures having a strain compensated layer and method of fabrication Download PDF

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Publication number
WO2000058999A3
WO2000058999A3 PCT/IB2000/000892 IB0000892W WO0058999A3 WO 2000058999 A3 WO2000058999 A3 WO 2000058999A3 IB 0000892 W IB0000892 W IB 0000892W WO 0058999 A3 WO0058999 A3 WO 0058999A3
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WO
WIPO (PCT)
Prior art keywords
layer
fabrication
strain compensated
constituent
material under
Prior art date
Application number
PCT/IB2000/000892
Other languages
French (fr)
Other versions
WO2000058999A9 (en
WO2000058999A2 (en
WO2000058999B1 (en
Inventor
Toru Takayama
Takaaki Baba
James S Harris Jr
Original Assignee
Matsushita Electric Corp
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Filing date
Publication date
Application filed by Matsushita Electric Corp filed Critical Matsushita Electric Corp
Priority to JP2000608410A priority Critical patent/JP2002540618A/en
Priority to EP00940681A priority patent/EP1183761A2/en
Publication of WO2000058999A2 publication Critical patent/WO2000058999A2/en
Publication of WO2000058999A3 publication Critical patent/WO2000058999A3/en
Publication of WO2000058999B1 publication Critical patent/WO2000058999B1/en
Publication of WO2000058999A9 publication Critical patent/WO2000058999A9/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

The present invention provides a semiconductor structure which includes a strain compensated superlattice layer comprising a plurality of pairs of constituent layers, with the first constituent layer comprising a material under tensile stress, and the second constituent layer comprising a material under compressive stress, such that the stresses of the adjacent layer compensate one another and lead to reduced defect generation. Appropriate selection of materials provides increased band gap and optical confinement in at least some implementations. The structure is particularly suited to the construction of laser diodes, photodiodes, phototransistors, and heterojunction field effect and bipolar transistors.
PCT/IB2000/000892 1999-03-26 2000-03-01 Semiconductor structures having a strain compensated layer and method of fabrication WO2000058999A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000608410A JP2002540618A (en) 1999-03-26 2000-03-01 Semiconductor structure having strain compensation layer and manufacturing method
EP00940681A EP1183761A2 (en) 1999-03-26 2000-03-01 Semiconductor structures having a strain compensated layer and method of fabrication

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US27731999A 1999-03-26 1999-03-26
US09/277,319 1999-03-26

Publications (4)

Publication Number Publication Date
WO2000058999A2 WO2000058999A2 (en) 2000-10-05
WO2000058999A3 true WO2000058999A3 (en) 2001-01-04
WO2000058999B1 WO2000058999B1 (en) 2001-08-02
WO2000058999A9 WO2000058999A9 (en) 2002-08-29

Family

ID=23060339

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2000/000892 WO2000058999A2 (en) 1999-03-26 2000-03-01 Semiconductor structures having a strain compensated layer and method of fabrication

Country Status (4)

Country Link
EP (1) EP1183761A2 (en)
JP (1) JP2002540618A (en)
CN (1) CN1347581A (en)
WO (1) WO2000058999A2 (en)

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US6558973B2 (en) * 2001-01-22 2003-05-06 Honeywell International Inc. Metamorphic long wavelength high-speed photodiode
EP2034530B1 (en) 2001-06-15 2015-01-21 Cree, Inc. GaN based LED formed on a SiC substrate
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US7339255B2 (en) 2004-08-24 2008-03-04 Kabushiki Kaisha Toshiba Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes
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WO2006030845A1 (en) 2004-09-16 2006-03-23 Nec Corporation Group iii nitride semiconductor optical device
KR100662191B1 (en) * 2004-12-23 2006-12-27 엘지이노텍 주식회사 Nitride semiconductor LED and fabrication method thereof
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CN1326298C (en) * 2005-06-29 2007-07-11 武汉电信器件有限公司 Method for raising semiconductor laser yield
WO2007043009A2 (en) 2005-10-11 2007-04-19 Koninklijke Philips Electronics N.V. Mr rf antenna with integrated electronics
JP2007250991A (en) * 2006-03-17 2007-09-27 Nippon Telegr & Teleph Corp <Ntt> Semiconductor structure comprising superlattice structure, and semiconductor device equipped therewith
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EP1883140B1 (en) 2006-07-27 2013-02-27 OSRAM Opto Semiconductors GmbH LD or LED with superlattice clad layer and graded doping
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CN103715606A (en) * 2013-12-18 2014-04-09 武汉华工正源光子技术有限公司 Method for modulating doped type multi-period strain compensation quantum well epitaxial growth
US11322643B2 (en) 2014-05-27 2022-05-03 Silanna UV Technologies Pte Ltd Optoelectronic device
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Also Published As

Publication number Publication date
CN1347581A (en) 2002-05-01
WO2000058999A9 (en) 2002-08-29
JP2002540618A (en) 2002-11-26
WO2000058999A2 (en) 2000-10-05
EP1183761A2 (en) 2002-03-06
WO2000058999B1 (en) 2001-08-02

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