KR20120133632A - Light emitting diode - Google Patents

Light emitting diode Download PDF

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Publication number
KR20120133632A
KR20120133632A KR1020110052367A KR20110052367A KR20120133632A KR 20120133632 A KR20120133632 A KR 20120133632A KR 1020110052367 A KR1020110052367 A KR 1020110052367A KR 20110052367 A KR20110052367 A KR 20110052367A KR 20120133632 A KR20120133632 A KR 20120133632A
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South Korea
Prior art keywords
layer
ohmic contact
semiconductor layer
light emitting
emitting diode
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KR1020110052367A
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Korean (ko)
Inventor
강세은
김영채
한예지
박청훈
최병균
정태일
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엘지디스플레이 주식회사
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Priority to KR1020110052367A priority Critical patent/KR20120133632A/en
Publication of KR20120133632A publication Critical patent/KR20120133632A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: A light emitting diode is provided to improve optical extraction efficiency by effectively reducing light loss due to total reflection which is generated the interface between an ohmic contact layer and a resin. CONSTITUTION: A first semiconductor layer(22) is formed on a buffer layer. An active layer(23) is formed on a semiconductor layer. The second semiconductor layer is formed on the active layer and has a plurality of groves on a surface thereof. An ohmic contact layer(25) on an nth(n is a natural number more than 1) layer is formed on the second semiconductor layer. The side of the ohmic contact layer is formed inclinedly to be an acute angle with the top surface of the second semiconductor layer. A first electrode pad is formed on the first semiconductor layer except for a part where the active layer is formed. A second electrode pad(27) is formed on the ohmic contact layer.

Description

[0001] LIGHT EMITTING DIODE [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to light emitting diodes, and more particularly, to light emitting diodes capable of improving light efficiency through photonic crystals.

In general, a light emitting diode (LED) is one of light emitting devices that emit light when a current is applied. Such a light emitting diode converts electricity into light using characteristics of a compound semiconductor, and is known to be excellent in energy saving effect because it can emit high efficiency light at low voltage. Recently, the luminance problem of light emitting diodes has been greatly improved and applied to various automation devices such as a backlight unit, a display board, a display, and a home appliance of a liquid crystal display device.

In particular, gallium nitride (GaN) -based light emitting diodes exhibit a wide range of emission spectra including infrared to infrared, and can be used in various ways, and do not include environmentally harmful substances such as arsenic (As) and mercury (Hg). It is attracting attention as the next generation light source.

1A is a perspective view of a general light emitting diode, and FIG. 1B is a cross-sectional view taken along line AA ′ of FIG. 1A. 2 is a cross-sectional view illustrating an internal structure of a general light emitting diode package.

1A and 1B, a general light emitting diode 100 includes a substrate 10, a buffer layer 11 formed on the substrate 10, a first semiconductor layer 13 formed on the buffer layer 11, and a first light emitting diode 100. 1 The active layer 14 formed on a predetermined portion on the semiconductor layer 13, the second semiconductor layer 15 formed on the active layer 14, and the ohmic contact layer 16 formed of a transparent conductive material on the second semiconductor layer 15. ), A first electrode pad 18 formed on a predetermined portion of the first semiconductor layer 13 on which the active layer 14 is not formed, and a second electrode pad 17 formed on the ohmic contact layer 16. It is made to include.

2, the general light emitting diode package includes a light emitting diode 100, a frame 120 on which the light emitting diode 100 is mounted, an adhesive layer 130 fixing the light emitting diode 100 to the frame 120, Bonding between the first and second lead frames 140a and 140b and the light emitting diode 100 and the first and second lead frames 140a and 140b which are formed separately from each other in a form extending from the inside of the frame 120 to the outside. And a first lead and a second lead 150a and 150b connecting each of them, and a phosphor 160 filled in the frame 120 to surround the light emitting diode 100. Here, the frame 120 includes a frame substrate 120a for supporting the light emitting diode 100 and a frame cup 120b for receiving the phosphor 160 dispersed in the resin 160a.

In this case, the first lead 150a is connected to the first electrode pad 18, and the second lead 150b is connected to the second electrode pad 17.

The light emitting diode 100 is injected through the first and second lead frames 140a and 140b, the first and second leads 150a and 150b, and the first and second electrode pads 18 and 17, respectively. When the forward voltage is formed in the active layer 14 by the holes and electrons, the holes and the electrons meet and recombine in the active layer 14 to emit light.

Although not shown, a plurality of grooves are formed in the upper surface of the second semiconductor layer 15 or the upper surface of the ohmic contact layer 16 to improve the light extraction efficiency of the light emitting diode 100 to form a photonic crystal structure. . For example, when the groove is formed on the upper surface of the ohmic contact layer 16, the light trapped in the horizontal direction is emitted in the vertical direction by using the groove period, the depth, and the refractive index difference between the ohmic contact layer 16 and the air. It is possible to improve the light efficiency and to emit light in a specific wavelength band by adjusting the optical band gap.

However, when the light emitting diode is manufactured as a package, the resin 160a having a higher refractive index than air penetrates into the groove to change the refractive index difference, so that the light emitting diode having the desired optical band gap cannot be formed. No improvement in light efficiency can be expected.

The present invention has been made to solve the above problems, to provide a light emitting diode that can prevent the optical bandgap from changing by preventing the resin from penetrating between the grooves formed on the surface of the second semiconductor layer or ohmic contact pattern, The purpose is.

A light emitting diode according to the present invention for solving the above problems, the substrate; A buffer layer formed on the entire surface of the substrate; A first semiconductor layer formed on the buffer layer; An active layer formed on the semiconductor layer; A second semiconductor layer formed on the active layer and having a plurality of grooves on a surface thereof; An ohmic contact layer of an n (n = 1 or more natural number) layer formed on the second semiconductor layer, the side surface of which is inclined to form an acute angle with an upper surface of the second semiconductor layer; A first electrode pad formed on the first semiconductor layer except for an area where the active layer is formed; And a second electrode pad formed on the ohmic contact layer.

The inside of the groove is filled with air.

The angle between the side surface of the n-layer ohmic contact layer and the top surface of the n-1 layer ohmic contact layer becomes larger.

When n = 1, the n-1 layer is the second semiconductor layer.

The inclined directions of the even and odd layers of the ohmic contact layer are opposite.

The ohmic contact layer is formed of a transparent conductive material.

In addition, the light emitting diode of the present invention for achieving the same object, the substrate; A buffer layer formed on the entire surface of the substrate; A first semiconductor layer formed on the buffer layer; An active layer formed on the semiconductor layer; A second semiconductor layer formed on the active layer; An ohmic contact pattern formed on the second semiconductor layer and having a plurality of grooves on a surface thereof; An ohmic contact layer formed on the ohmic contact pattern and having an n (n = 1 or more natural number) layer formed to be inclined to form an acute angle with an upper surface of the ohmic contact pattern; A first electrode pad formed on the first semiconductor layer except for an area where the active layer is formed; And a second electrode pad formed on the ohmic contact layer.

The inside of the groove is filled with air.

The angle between the side surface of the n-layer ohmic contact layer and the top surface of the n-1 layer ohmic contact layer becomes larger.

When n = 1, the n-1 layer is the ohmic contact pattern.

The inclined directions of the even and odd layers of the ohmic contact layer are opposite.

The ohmic contact layer and the ohmic contact pattern are formed of a transparent conductive material.

The light emitting diode of the present invention as described above has the following effects.

First, by preventing the resin from penetrating between the grooves formed on the surface of the second semiconductor layer or the ohmic contact pattern, it is possible to prevent the optical band gap from changing. As a result, the light efficiency can be expected to be improved as much as expected, and the light extraction efficiency can be effectively improved by utilizing the optical band gap effect to the maximum.

Second, by forming the n-layer ohmic contact layer, the refractive index of the ohmic contact layer is similar to that of the resin, thereby effectively reducing light loss due to total reflection that may occur at the interface between the ohmic contact layer and the resin, thereby improving light extraction efficiency. Can be.

1A is a perspective view of a general light emitting diode.
FIG. 1B is a cross-sectional view along the line AA ′ of FIG. 1A; FIG.
Figure 2 is a cross-sectional view showing the internal structure of a typical light emitting diode package.
3A and 3B are cross-sectional views of a light emitting diode according to a first embodiment of the present invention.
4A to 4C are graphs showing optical band gaps according to refractive index differences.
5A and 5B are cross-sectional views of a light emitting diode according to a second embodiment of the present invention.

Hereinafter, a light emitting diode according to the present invention will be described in detail with reference to the accompanying drawings.

First Embodiment

3A and 3B are cross-sectional views of a light emitting diode according to a first embodiment of the present invention. FIG. 3A illustrates a single layer of ohmic contact layer, and FIG. 3B illustrates an ohmic contact layer of n (n = 2 or more natural numbers) layers. Is shown.

3A and 3B, the light emitting diode according to the first embodiment of the present invention includes a substrate 20, a buffer layer 21 formed on the entire surface of the substrate 20, and a first semiconductor layer formed on the buffer layer 21. 22, the second semiconductor layer 24 and the second semiconductor layer 24 formed on the first semiconductor layer 22, the second semiconductor layer 24 formed on the active layer 23, and having a plurality of grooves 24h on the surface thereof. And a partial region of the first semiconductor layer 22 except for an ohmic contact layer 25 and an active layer 23 on which the side surface is inclined to form an acute angle with the upper surface of the second semiconductor layer 24. And a first electrode pad 28 formed on the second electrode pad 27 formed on the ohmic contact layer 25.

The substrate 20 is formed of a transparent insulating material such as sapphire (Al 2 O 3 ), aluminum nitride (AlN), gallium nitride (GaN) and silicon carbide (SiC), and is particularly inexpensive and resistant to alkali, acid and heat. It is preferable that it is a board | substrate formed with the sapphire with low strain by.

The sapphire substrate is a Hexa-Rhombo R3c symmetric crystal with a lattice constant of 13.001Å in the c-axis direction and 4.765Å in the a-axis direction, and has a lattice distance in the sapphire orientation direction Has a C (0001) plane, an A (1120) plane, an R (1102) plane, and the like. The C surface of the sapphire substrate is relatively easy to grow the nitride semiconductor material, and is stable at high temperatures.

In addition, although not shown, a plurality of protrusions having a curvature in cross section or polygonal shapes such as triangles and squares may be formed on the substrate 20, and the protrusions are regularly or irregularly arranged. The projections function to reflect the light propagated toward the substrate 20 side of the light generated in the active layer 23 back to the top to be emitted to the outside of the device. In addition, the projections function to emit the light incident on the substrate 20 to the outside of the device so as not to be trapped inside the substrate 20 at an angle of incidence above the critical angle.

In addition, the buffer layer 21 corrects crystal defects generated in the active layer 23 due to a lattice constant difference and a thermal expansion coefficient difference between the substrate 20, the first and second semiconductor layers 22 and 24, and the active layer 23. As a buffer layer for reducing, the first buffer layer and the second buffer layer may be a stacked structure.

In this case, the first buffer layer is silicon dioxide (SiO 2 ) so that the first semiconductor layer 22, the active layer 23, and the second semiconductor layer 24, which are formed of a nitride semiconductor on the substrate 20, can be appropriately grown. As described above, the first semiconductor layer 22 is formed of a material having a structure similar to that of the first semiconductor layer 22, the active layer 23, and the second semiconductor layer 24. The second buffer layer is formed by growing an undoped nitride semiconductor so that the n-type nitride semiconductor (n-GaN) formed of the substrate 20 and the first semiconductor layer 22 has different lattice constants and thermal expansion coefficients. Overcoming having

The first semiconductor layer 22 formed on the buffer layer 21 is n- having conductivity by adding impurities such as silicon (Si), germanium (Ge), selenium (Se), tellurium (Te), or carbon (C). It is formed of a type nitride semiconductor (n-GaN). Representative n-type nitride semiconductors are aluminum gallium nitride (AlGaN), gallium indium nitride (GaInN), and the like.

The active layer 23 is a layer in which light is generated by recombination of electrons and holes. The active layer 23 is formed to have a multiple quantum well structure (MQW) composed of a barrier layer and a well layer (InGaN-GaN) to emit light in a wavelength range of 350 nm to 550 nm. At this time, the wavelength band of light to be emitted by the light emitting diode is determined according to the composition ratio of the nitride semiconductors InGaN and GaN.

The second semiconductor layer 24 is formed of a conductive p-type nitride semiconductor (p-GaN) by adding magnesium (Mg), zinc (Zn), beryllium (Be), or the like as an impurity. Type nitride semiconductors are aluminum gallium nitride (AlGaN), gallium indium nitride (GaInN), and the like.

In particular, in order to improve light extraction efficiency of the light emitting diode, a method of photolithography, E-Beam Lithography, Nano Imprint Lithography, or the like may be used to form the second semiconductor layer 24. A plurality of grooves 24h are formed on the surface to form a photonic crystal structure.

The photonic crystal structure improves light extraction efficiency by allowing light of a specific wavelength to be emitted in a vertical direction rather than in a horizontal direction by using a difference in refractive index between two materials. The difference in refractive index between 24 and air can be used to form a light emitting diode having an optical bandgap that matches the initial design.

On the second semiconductor layer 24, holes injected into the second electrode pad 27 with a transparent conductive material such as zinc oxide (ZnO) or indium tin oxide (ITO) are diffused to the second semiconductor layer 24 as wide as possible. In order to form the ohmic contact layer 25.

However, since the ohmic contact layer of the general light emitting diode is formed to cover the entire surface of the second semiconductor layer along the groove formed on the surface of the second semiconductor layer, the optical band gap is not formed due to the difference in refractive index between the second semiconductor layer and the air. The optical band gap is formed due to the difference in refractive index between the ohmic contact layer and the air. Furthermore, when the light emitting diode is packaged, resin penetrates into the groove, and thus an optical band gap is formed due to the difference in refractive index between the ohmic contact layer and the resin. Therefore, the optical bandgap region may be narrower or shifted than the desired optical bandgap region, and thus the optical efficiency improvement as expected may not be expected.

Hereinafter, the optical bandgap according to the material of the photonic crystal structure will be described in detail.

4A to 4C are graphs showing optical band gaps according to materials of photonic crystal structures.

As shown in FIG. 4A, in the photonic crystal including gallium nitride (GaN) and air having a refractive index of 1, an optical band gap is formed at wavelengths of 430 nm to 488 nm and 567 nm to 678 nm. However, as shown in FIG. 4B, an optical band gap is formed in the light wavelength range of 456 nm to 496 nm and 632 nm to 695 nm for the photonic crystal including gallium nitride (GaN) and a resin having a refractive index of 1.4. As described above, an optical band gap is formed in the wavelength range of 421 nm to 434 nm, 471 nm to 496 nm, and 662 nm to 695 nm for the photonic crystal composed of gallium nitride (GaN) and a resin having a refractive index of 1.6.

In other words, when the material of the photonic crystal structure changes, the optical bandgap changes, so that the expected improvement in light efficiency cannot be expected. For example, when it is desired to implement blue having a wavelength of 444 nm to 455 nm, blue may be realized in a photonic crystal composed of gallium nitride (GaN) and air, but blue in a photonic crystal composed of gallium nitride (GaN) and resin. Cannot be implemented.

Accordingly, in the light emitting diode of the present invention, when packaging the light emitting diode, a resin having a larger refractive index than air penetrates into the plurality of grooves 24h formed on the surface of the second semiconductor layer 24 so that the difference in refractive index does not decrease. The ohmic contact layer 25 is formed to be inclined at an acute angle with the top surface of the layer 24.

At this time, the ohmic contact layer 25 is inclined such that the angle θ 1 formed between the side surface of the ohmic contact layer 25 and the upper surface of the surface of the second semiconductor layer 24 becomes an acute angle. Accordingly, the ohmic contact layer 25 formed to be inclined prevents the resin from penetrating into the groove 24h when packaging the light emitting diode, so that the inside of the groove 24h is filled with air.

In addition, the ohmic contact layer 25 may be formed of n (n = 2 or more natural numbers) layers sequentially stacked, and the n-side ohmic contact layer 25 and the n−1 ohmic contact layer 25 may be formed. The angle formed by the upper surface of is gradually increased within the range of the acute angle.

Specifically, the ohmic contact layer 25 formed of 3 (n = 3) layers is illustrated in the drawing. Referring to the drawings, the angle formed between the side surface of the first ohmic contact layer 25a formed directly on the second semiconductor layer 24 and the upper surface of the second semiconductor layer 24 is defined by the first angle θ 1 , The angle formed between the side surface of the second ohmic contact layer 25b and the top surface of the first ohmic contact layer 25a is the second angle θ 2 and the side surface of the third ohmic contact layer 25c and the second ohmic contact layer. When the angle formed by the upper surface of 25b is referred to as the third angle θ 3 , θ 1 , θ 2 , and θ 3 are all acute angles, and the magnitude of the angle is θ 1 <θ 2 <θ 3 .

Therefore, the angle between the side surface of the n-layer ohmic contact layer 25 and the top surface of the n-1 layer ohmic contact layer 25 is gradually increased within an acute angle range, whereby the refractive index of the ohmic contact layer 25 is increased. Increasingly, the total reflection that may occur at the interface between the ohmic contact layer 25 and the air may be effectively reduced to reduce the light loss, thereby effectively improving the light extraction efficiency.

In particular, it is preferable that the inclined directions of the first and third ohmic contact layers 25a and 25c as odd layers and the second ohmic contact layer 25b as even layers are opposite.

The light emitting diode of the present invention as described above can form a light emitting diode having a desired optical bandgap without changing the optical bandgap when light generated in the active layer 23 is emitted to the outside through the package as much as expected. The light efficiency can be expected to be improved.

In addition, the first electrode pads 28 formed on a portion of the first semiconductor layer 22 may include nickel (Ni), gold (Au), platinum (Pt), titanium (Ti), and aluminum (Al). A portion of the first semiconductor layer 22 exposed by removing some regions of the ohmic contact layer 25, the second semiconductor layer 24, and the active layer 23, which is a metal including any one metal or two or more thereof. It is formed to contact with. The second electrode pad 27 is an alloy including any one metal of nickel (Ni), gold (Au), platinum (Pt), titanium (Ti), aluminum (Al) or an alloy containing two or more ohmic contact layers. It is formed on (25).

Second Embodiment

5A and 5B are cross-sectional views of a light emitting diode according to a second embodiment of the present invention. FIG. 5A illustrates a single layer of ohmic contact layer, and FIG. 5B illustrates an ohmic contact layer of n (n = 2 or more natural numbers) layers. Is shown.

5A and 5B, the light emitting diode according to the second embodiment of the present invention may include a substrate 30, a buffer layer 31 formed on the entire surface of the substrate 30, and a first semiconductor layer formed on the buffer layer 31. 32, an active layer 33 formed on the first semiconductor layer 32, a second semiconductor layer 34 formed on the active layer 33, and a second semiconductor layer 34 formed on the surface of the plurality of grooves. The ohmic contact pattern 36 having the 36h and the ohmic contact pattern 36 are formed on the ohmic contact layer 35 and the active layer 33 which is formed to be inclined to form an acute angle with the upper surface of the ohmic contact pattern 36. The first electrode pad 38 and the second electrode pad 37 formed on the ohmic contact pattern 36 are formed on the partial region of the first semiconductor layer 32 except for the region in which the ()) is formed.

As described above, the light emitting diode according to the second embodiment of the present invention differs only from forming a plurality of grooves on the surface of the light emitting diode and the ohmic contact pattern according to the first embodiment, and the other components are the same.

In order to improve the light extraction efficiency of the light emitting diode, the second embodiment of the present invention uses an ohmic method using photolithography, E-Beam Lithography, Nano Imprint Lithography, or the like. A plurality of grooves 36h are formed on the surface of the contact pattern 36 to form photonic crystals.

However, when packaging a light emitting diode, a resin having a larger refractive index than air may penetrate into the groove 36h formed on the surface of the ohmic contact pattern 36, thereby reducing the difference in refractive index, so as to prevent the ohmic contact pattern 36. The ohmic contact layer 35 is formed on the ohmic contact pattern 36 by using a transparent conductive material such as). In this case, an angle formed between a side surface of the ohmic contact layer 35 and an upper surface of the surface of the ohmic contact pattern 36 is formed. (θ 1 ) is an acute angle.

Therefore, since the ohmic contact layer 35 is not formed in the groove 36h but is formed only on the ohmic contact pattern 36, when the ohmic contact layer 35 formed to be inclined to package the light emitting diode, the resin is formed in the groove ( 36h) to prevent infiltration.

In addition, the ohmic contact layer 35 may be formed of n (n = 2 or more natural numbers) layers sequentially stacked, and the n-side ohmic contact layer 35 and the n−1 layer of ohmic contact layer 35 may be formed. The angle formed by the upper surface of is gradually increased within the range of the acute angle.

Specifically, the ohmic contact layer 35 formed of 3 (n = 3) layers is illustrated in the drawing. Referring to the drawings, the angle between the side surface of the first ohmic contact layer 35a formed directly on the ohmic contact pattern 36 and the top surface of the ohmic contact pattern 36 is defined as the first angle θ 1 and the second. The angle formed between the side surface of the ohmic contact layer 35b and the top surface of the first ohmic contact layer 35a is the second angle θ 2 , and the side surface of the third ohmic contact layer 35c and the second ohmic contact layer 35b. ) when the La of the third angle (θ 3), the angle of the top surface forms, and θ 1, both acute angle θ 2, θ 3, the size of the angle is θ 1 <θ 2 <θ 3 .

Therefore, the angle between the side surface of the n-layer ohmic contact layer 35 and the top surface of the n-type ohmic contact layer 35 increases gradually within an acute angle range, whereby the refractive index of the ohmic contact layer 35 is increased. Increasingly, it is possible to effectively reduce the total reflection that may occur at the interface between the ohmic contact layer 35 and the air to reduce the light loss can effectively improve the light extraction efficiency.

In particular, it is preferable that the inclined directions of the first and third ohmic contact layers 35a and 35c as odd layers and the second ohmic contact layer 35b as even layers are opposite.

As described above, the light emitting diode of the present invention can not only improve light efficiency through photonic crystals but also form a light emitting diode having a desired optical band gap when light generated in the active layer is emitted to the outside through the package. Therefore, the optical efficiency can be expected to increase as much as expected.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes may be made without departing from the spirit of the present invention.

20, 30: substrate 21, 31: buffer layer
22, 32: first semiconductor layer 23, 33: active layer
24, 34: second semiconductor layer 24h, 36h: hole
25, 35: ohmic contact layer 36: ohmic contact pattern
27, 37: second electrode pad 28, 38: first electrode pad

Claims (12)

Board;
A buffer layer formed on the entire surface of the substrate;
A first semiconductor layer formed on the buffer layer;
An active layer formed on the semiconductor layer;
A second semiconductor layer formed on the active layer and having a plurality of grooves on a surface thereof;
An ohmic contact layer of an n (n = 1 or more natural number) layer formed on the second semiconductor layer, the side surface of which is inclined to form an acute angle with an upper surface of the second semiconductor layer;
A first electrode pad formed on the first semiconductor layer except for an area where the active layer is formed; And
And a second electrode pad formed on the ohmic contact layer. The method of claim 1,
The inside of the groove is a light emitting diode, characterized in that the air is filled. The method of claim 1,
The angle formed between the side of the n-layer ohmic contact layer and the top surface of the n-1 layer of ohmic contact layer becomes larger. The method of claim 3, wherein
When n = 1, the n-1 layer is the second semiconductor layer. The method of claim 1,
Light emitting diodes, characterized in that the inclined direction of the even layer and the odd layer of the ohmic contact layer is opposite. The method of claim 1,
The ohmic contact layer is a light emitting diode, characterized in that formed of a transparent conductive material. Board;
A buffer layer formed on the entire surface of the substrate;
A first semiconductor layer formed on the buffer layer;
An active layer formed on the semiconductor layer;
A second semiconductor layer formed on the active layer;
An ohmic contact pattern formed on the second semiconductor layer and having a plurality of grooves on a surface thereof;
An ohmic contact layer formed on the ohmic contact pattern, and having an n (n = 1 or more natural number) layer formed to be inclined to form an acute angle with an upper surface of the ohmic contact pattern;
A first electrode pad formed on the first semiconductor layer except for an area where the active layer is formed; And
And a second electrode pad formed on the ohmic contact layer. The method of claim 7, wherein
The inside of the groove is a light emitting diode, characterized in that the air is filled. The method of claim 7, wherein
The angle formed between the side of the n-layer ohmic contact layer and the top surface of the n-1 layer of ohmic contact layer becomes larger. The method of claim 9,
When n = 1, the n-1 layer is the ohmic contact pattern. The method of claim 7, wherein
Light emitting diodes, characterized in that the inclined direction of the even layer and the odd layer of the ohmic contact layer is opposite. The method of claim 7, wherein
The ohmic contact layer and the ohmic contact pattern is a light emitting diode, characterized in that formed of a transparent conductive material.
KR1020110052367A 2011-05-31 2011-05-31 Light emitting diode KR20120133632A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014104688A1 (en) * 2012-12-28 2014-07-03 일진엘이디(주) Nitride semiconductor light-emitting device and method of manufacturing same
CN108511574A (en) * 2017-02-28 2018-09-07 山东浪潮华光光电子股份有限公司 A kind of preparation method of GaN base light emitting chip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014104688A1 (en) * 2012-12-28 2014-07-03 일진엘이디(주) Nitride semiconductor light-emitting device and method of manufacturing same
CN108511574A (en) * 2017-02-28 2018-09-07 山东浪潮华光光电子股份有限公司 A kind of preparation method of GaN base light emitting chip

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