CN104134732A - Epitaxial structure for solving efficiency drop of GaN-based LED (Light Emitting Diode) - Google Patents
Epitaxial structure for solving efficiency drop of GaN-based LED (Light Emitting Diode) Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
The invention provides an epitaxial structure for solving efficiency drop of a GaN-based LED (Light Emitting Diode). The epitaxial structure comprises a substrate and a GaN bottom layer, a superlattice stress relief layer, a multi-quantum well layer, a P-type InGaN insertion layer, a P-type electronic baffle layer and a P-type GaN layer which are sequentially stacked on the substrate, the P-type InGaN insertion layer is inserted between a last barrier of the multi-quantum well layer and the P-type electronic baffle layer, the In component of the P-type InGaN insertion layer is gradually increased from near the multi-quantum well layer to the electronic baffle layer, and pulse-type magnesium is adopted for doping. On one hand, electron leak to a P terminal can be reduced, on the other hand, injection of a hole to an active region can be increased. By the epitaxial structure, the problem of efficiency drop of the GaN-based LED can be solved, and luminous efficiency on a condition of large current is improved.
Description
Technical field
The present invention relates to GaN base blue-ray LED and manufacture field, relate in particular to a kind of epitaxial structure that can improve LED decrease in efficiency.
Background technology
Light-emitting diode (LED, Light Emitting Diode) is a kind of semiconductor solid luminescence device, and it utilizes semiconductor PN as luminescent material, can directly electricity be converted to light.GaN (gallium nitride) based high-brightness light-emitting diode is forward position and the focus of current optoelectronic areas and industry.The luminous efficiency of current I nGaN (InGaN), GaN base LED has had significantly to be improved, but for high-power GaN-based LED, exist serious quantum efficiency decline (efficiency droop) problem, in the situation that large electric current injects, the internal quantum efficiency of LED can decline rapidly.Forefathers have proposed a lot of mechanism and have gone to explain this phenomenon, comprise that polarized electric field, electronics reveal, and active area charge carrier skewness, Auger are non-radiative compound etc.From research before, hole injection efficiency is not high, and electronics is to cause one of possible cause that under large electric current, quantum efficiency declines to the leakage of P end.
For the inadequate problem of electronic blocking, there is researcher to propose electronic barrier layer (Electron Blocking Layer, EBL).Yet, existence due to polarized electric field between heterojunction, electronic barrier layer can be downward-sloping, under large electric current injection condition, traditional electronic barrier layer is still not enough to block electrons to the leakage of P end, and the large energy gap in conditional electronic barrier layer has also hindered the injection of hole to multiple quantum well layer simultaneously.
Summary of the invention
The object of the present invention is to provide a kind of epitaxial structure of the GaN of improvement base LED decrease in efficiency, under large driven current density condition, can further stop that on the one hand a large amount of electronics are to the leakage of P end, also increase on the other hand the injection of hole to multiple quantum well layer, thereby can improve the luminous efficiency of GaN base LED under large current condition.
To achieve these goals, the present invention proposes a kind of epitaxial structure of the GaN of improvement base LED decrease in efficiency, described structure comprises substrate and stacks gradually GaN bottom, superlattice stress release layer, multiple quantum well layer, P type InGaN insert layer, P type electronic barrier layer and the P type GaN layer on substrate.
Further, described P type InGaN insert layer is pulsed Mg doping, from 0% to 7% gradual change of the component of In; The thickness of described P type InGaN insert layer is 3nm～12nm, and Mg doping content scope is 1e18cm
-3～1e19cm
-3.
Further, described electronic barrier layer is pAlGaN or the superlattice structure that is comprised of pAlGaN/pGaN, and the thickness of described electronic barrier layer is 30～80nm.
Further, in described P type GaN layer, the doping content scope of magnesium is 1e19cm
-3～6e20cm
-3, the thickness of described P type GaN layer is 30nm～50nm.
Compared with prior art, beneficial effect of the present invention is mainly reflected in: between multiple quantum well layer and P type electronic barrier layer, form P type InGaN insert layer, due to indium content gradually variational in P type InGaN insert layer, so can improve the polarized electric field that the lattice mismatch between GaN potential barrier and insert layer causes, in addition, with conditional electronic barrier layer, compare, indium gallium nitrogen has smaller energy gap; Thereby can increase hole injection efficiency, and stop electronics to be revealed to P end, improve the luminous efficiency of GaN base LED under large current condition.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of improving the epitaxial structure of GaN base LED decrease in efficiency in one embodiment of the invention;
Fig. 2 is the making flow chart that improves the epitaxial structure of GaN base LED decrease in efficiency in one embodiment of the invention;
Fig. 3 to Fig. 6 is the generalized section that can improve in one embodiment of the invention in the epitaxial structure manufacture process of GaN base LED decrease in efficiency.
Embodiment
Below in conjunction with schematic diagram, the epitaxial structure of the GaN of improvement base LED decrease in efficiency of the present invention is described in more detail, the preferred embodiments of the present invention have wherein been represented, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
For clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the present invention chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details to realize developer's specific objective, for example, according to the restriction of relevant system or relevant business, by an embodiment, change into another embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, with reference to accompanying drawing, with way of example, the present invention is more specifically described.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the object of the aid illustration embodiment of the present invention lucidly.
Mentioned as background technology, under large electric current injects, there is a large amount of electronics in active area, thereby be leaked to P end by having excessive electronics; Meanwhile, because the effective mass in hole is larger, causing it is not very even to the injection of active area, mainly concentrates in the potential well near P end.
Please refer to Fig. 1, for the problems referred to above, the present embodiment has proposed a kind of epitaxial structure of the GaN of improvement base LED decrease in efficiency, and described structure comprises substrate 10 and stacks gradually GaN bottom, superlattice stress release layer 40, multiple quantum well layer 50, P type InGaN insert layer 70, P type electronic barrier layer 70 and the P type GaN layer 80 on substrate.
Wherein, P type InGaN insert layer 70 is pulsed Mg doping (Delta Mg doping), the wherein component of In from 0% to 7% gradual change; The thickness of P type InGaN insert layer 70 is 3nm～12nm, for example, be 8nm, and Mg doping content scope is 1e18cm
-3～1e19cm
-3.Adopt the Mg doping of delta formula can improve the activation rate of P type InGaN insert layer 70 magnesium, also can reduce magnesium simultaneously to the diffusion in multiple quantum well layer 50 last potential barrier (Last barrier), its performance when little electric current also can not worsened.If epitaxial structure is used for making the chip under little electric current, can be not magnesium-doped in P type InGaN insert layer 70.In the one side that P type InGaN insert layer 70 contacts with multiple quantum well layer 50, the component of indium is 0, in the one side that P type InGaN insert layer 70 contacts with the electronic barrier layer of follow-up formation, the component of indium is that the component of indium in 7%, P type InGaN insert layer 70 is by 0 to 7% gradual change.Because indium content gradually variational in P type InGaN insert layer 70 reduces to improve the polarized electric field that the lattice mismatch between last barrier and P type InGaN insert layer 70 causes, in addition because having smaller energy gap, InGaN increased on the one hand the barrier height that electronics is revealed to P end, reduced again on the other hand the barrier height that hole is injected to N bottom, thereby can increase hole injection efficiency, stop electronics to be revealed to P end, improve luminous efficiency.
The present embodiment only can improve the not high phenomenon of efficiency under large electric current by one deck P type InGaN insert layer 70, has simple to operately, is easy to the advantages such as realization.
Please refer to Fig. 2, the present embodiment has proposed a kind of manufacture method that can improve the epitaxial structure of GaN base LED decrease in efficiency, comprises step:
S100: substrate 10 is provided, forms GaN resilient coating 20 on substrate, GaN resilient coating 20 growth thickness are about 15nm～50nm, as shown in Figure 3;
S200: form successively non-doped gallium nitride layer 30 and N-shaped silicon-doped gallium nitride layer 40 on GaN resilient coating 20;
The total thickness of non-doped gallium nitride layer 30 and N-shaped silicon-doped gallium nitride layer 40 is 1.5～4.5um, for example, be 3um.
S300: form superlattice stress release layer 50 on N-shaped silicon-doped gallium nitride layer 40, as shown in Figure 4;
Wherein, superlattice stress release layer 50 is that InGaN and GaN alternately form, and the InGaN of and GaN are one-period pair, and in InGaN, In change of component scope is between 0%-7%, superlattice stress release layer 50 is 3～20 cycles pair, for example, be 10 cycles pair.
S400: form multiple quantum well layer 60 on superlattice stress release layer 50, as shown in Figure 5;
Multiple quantum well layer 60 is alternately comprised of potential well and potential barrier, and potential well and potential barrier are one-period pair, and same period is internal, and potential barrier is formed on potential well, and multiple quantum well layer 60 comprises 5～18 cycles pair, for example, be 8 cycles pair.The material of potential well is InGaN, and the thickness range of potential well is 2nm～5nm, and the material of potential barrier is gallium nitride, and the thickness range of potential barrier is 6nm～14nm; In multiple quantum well layer 6, except last potential barrier, other potential barriers are all carried out N-shaped silicon doping, and doping scope is 1e17cm
-3～2e18cm
-3.
S500: form P type InGaN insert layer 70 on multiple quantum well layer 60, as shown in Figure 6;
P type InGaN insert layer 70 adopts the magnesium-doped element of pulsed (Delta Mg doping), and doping content scope is 2e18～1e19, and the thickness of P type InGaN insert layer 70 is 3nm～12nm, for example, be 8nm.S600: form successively electronic barrier layer 80 and P type GaN layer 90 in P type InGaN insert layer 70, form epitaxial structure, as shown in Figure 1.
The electronic barrier layer 80 forming in P type InGaN insert layer 70 is the superlattice structure of gallium nitride (pAlGaN), P type gallium nitride (pGaN) or both combinations (pAlGaN-GaN) of P type adulterated al, the thickness of electronic barrier layer 80 is 30nm～80nm, for example 50nm, electronic barrier layer 80 can increase stopping electronics, prevent that electronics from, to the leakage of P end, further improving luminous efficiency.
The P type GaN layer 90 forming on electronic barrier layer 80 is the magnesium-doped gallium nitride of P type, and the doping content scope of magnesium is 1e19～6e19cm
-3, the thickness of P type GaN layer 90 is 30nm～50nm, for example, be 40nm, forms thus epitaxial structure.
To sum up, in the epitaxial structure that improves GaN base LED decrease in efficiency providing in the embodiment of the present invention, between multiple quantum well layer and P type electronic barrier layer, form P type InGaN insert layer, due to indium content gradually variational in P type InGaN insert layer, so can improve the polarized electric field that the lattice mismatch between GaN potential barrier and insert layer causes, in addition, with conditional electronic barrier layer, compare, indium gallium nitrogen has smaller energy gap; Thereby can increase hole injection efficiency, and stop electronics to be revealed to P end, improve the luminous efficiency of GaN base LED under large current condition.
Above are only the preferred embodiments of the present invention, the present invention is not played to any restriction.Any person of ordinary skill in the field; within not departing from the scope of technical scheme of the present invention; the technical scheme that the present invention is disclosed and technology contents are made any type of changes such as replacement or modification that are equal to; all belong to the content that does not depart from technical scheme of the present invention, within still belonging to protection scope of the present invention.
Claims (4)
1. improve an epitaxial structure for GaN base LED decrease in efficiency, described structure comprises substrate and stacks gradually GaN bottom, superlattice stress release layer, multiple quantum well layer, P type InGaN insert layer, P type electronic barrier layer and the P type GaN layer on substrate.
2. the epitaxial structure that improves GaN base LED decrease in efficiency as claimed in claim 1, is characterized in that, described P type InGaN insert layer is pulsed Mg doping, from 0% to 7% gradual change of the component of In; The thickness of described P type InGaN insert layer is 3nm～12nm, and Mg doping content scope is 1e18cm
-3～1e19cm
-3.
3. the epitaxial structure that improves GaN base LED decrease in efficiency as claimed in claim 1, is characterized in that, described electronic barrier layer is pAlGaN or the superlattice structure that is comprised of pAlGaN/pGaN, and the thickness of described electronic barrier layer is 30～80nm.
4. the epitaxial structure that improves GaN base LED decrease in efficiency as claimed in claim 1, is characterized in that, in described P type GaN layer, the doping content scope of magnesium is 1e19cm
-3～6e20cm
-3, the thickness of described P type GaN layer is 30nm～50nm.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410356966.9A CN104134732B (en) | 2014-07-24 | 2014-07-24 | It is a kind of to improve the epitaxial structure that GaN base LED efficiency declines |
| DE112015003419.6T DE112015003419T5 (en) | 2014-07-24 | 2015-07-20 | Epitaxy structure to improve the efficiency of GaN-based LEDs |
| PCT/CN2015/084486 WO2016011924A1 (en) | 2014-07-24 | 2015-07-20 | EPITAXIAL STRUCTURE FOR IMPROVING EFFICIENCY DROP OF GaN-BASED LED |
| GB1700942.4A GB2543682B (en) | 2014-07-24 | 2015-07-20 | Epitaxial structure for improving efficiency drop of GaN-based LED |
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| CN201410356966.9A CN104134732B (en) | 2014-07-24 | 2014-07-24 | It is a kind of to improve the epitaxial structure that GaN base LED efficiency declines |
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| CN104134732A true CN104134732A (en) | 2014-11-05 |
| CN104134732B CN104134732B (en) | 2017-09-19 |
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|---|---|
| CN (1) | CN104134732B (en) |
| DE (1) | DE112015003419T5 (en) |
| GB (1) | GB2543682B (en) |
| WO (1) | WO2016011924A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2016011924A1 (en) * | 2014-07-24 | 2016-01-28 | 映瑞光电科技(上海)有限公司 | EPITAXIAL STRUCTURE FOR IMPROVING EFFICIENCY DROP OF GaN-BASED LED |
| CN105405939A (en) * | 2015-12-02 | 2016-03-16 | 华灿光电(苏州）有限公司 | Light-emitting diode and manufacturing method thereof |
| CN105514235A (en) * | 2015-12-25 | 2016-04-20 | 扬州德豪润达光电有限公司 | Multiple-quantum well structure for optoelectronic device |
| CN105789391A (en) * | 2016-04-28 | 2016-07-20 | 聚灿光电科技股份有限公司 | GaN-based LED epitaxial structure and manufacturing method thereof |
| CN105870269A (en) * | 2016-05-26 | 2016-08-17 | 湘能华磊光电股份有限公司 | LED (light-emitting diode) epitaxial growth method capable of improving hole injection |
| CN105932118A (en) * | 2016-06-13 | 2016-09-07 | 湘能华磊光电股份有限公司 | LED epitaxial growth method for improving hole injection |
| CN106299052A (en) * | 2016-09-22 | 2017-01-04 | 东莞市联洲知识产权运营管理有限公司 | A kind of GaN epitaxial structure for LED and preparation method |
| CN107146836A (en) * | 2017-05-26 | 2017-09-08 | 华南理工大学 | GaN base green light LED epitaxial structure with gradual change In component p-type InGaN conductive layers and preparation method thereof |
| CN107204391A (en) * | 2017-05-24 | 2017-09-26 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial growth methods |
| CN104638082B (en) * | 2015-02-04 | 2017-10-13 | 映瑞光电科技(上海)有限公司 | The preparation method of low-voltage GaN base LED epitaxial structures |
| CN110098293A (en) * | 2019-04-26 | 2019-08-06 | 中国电子科技集团公司第三十八研究所 | LED structure with hetero-epitaxy NIP junction type multi-quantum well luminescence layer terminal |
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| CN111710762A (en) * | 2020-06-28 | 2020-09-25 | 中国科学院半导体研究所 | Group III nitride optoelectronic devices with p-type polarization doping |
| CN112436079A (en) * | 2020-10-31 | 2021-03-02 | 扬州大学 | GaN-based LED epitaxial structure of inverted triangular potential barrier and growth method thereof |
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| CN117410413B (en) * | 2023-12-14 | 2024-03-08 | 江西兆驰半导体有限公司 | LED epitaxial wafer and preparation method thereof |
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- 2014-07-24 CN CN201410356966.9A patent/CN104134732B/en not_active Expired - Fee Related
-
2015
- 2015-07-20 WO PCT/CN2015/084486 patent/WO2016011924A1/en active Application Filing
- 2015-07-20 GB GB1700942.4A patent/GB2543682B/en not_active Expired - Fee Related
- 2015-07-20 DE DE112015003419.6T patent/DE112015003419T5/en not_active Withdrawn
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| US20080081390A1 (en) * | 2004-12-06 | 2008-04-03 | Remigijus Gaska | Nitride-based light emitting heterostructure |
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Also Published As
| Publication number | Publication date |
|---|---|
| GB2543682A (en) | 2017-04-26 |
| GB201700942D0 (en) | 2017-03-08 |
| WO2016011924A1 (en) | 2016-01-28 |
| CN104134732B (en) | 2017-09-19 |
| DE112015003419T5 (en) | 2017-05-11 |
| GB2543682B (en) | 2019-04-17 |
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