CN107146836A - GaN base green light LED epitaxial structure with gradual change In component p-type InGaN conductive layers and preparation method thereof - Google Patents
GaN base green light LED epitaxial structure with gradual change In component p-type InGaN conductive layers and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 33
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 50
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 29
- 229910021529 ammonia Inorganic materials 0.000 claims description 25
- 238000006243 chemical reaction Methods 0.000 claims description 23
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 21
- 239000001257 hydrogen Substances 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 12
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 10
- 229910052749 magnesium Inorganic materials 0.000 claims description 10
- 239000011777 magnesium Substances 0.000 claims description 10
- 230000009467 reduction Effects 0.000 claims description 6
- 238000005234 chemical deposition Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 239000003344 environmental pollutant Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 231100000719 pollutant Toxicity 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims 1
- JOTBHEPHROWQDJ-UHFFFAOYSA-N methylgallium Chemical compound [Ga]C JOTBHEPHROWQDJ-UHFFFAOYSA-N 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 8
- 239000007924 injection Substances 0.000 abstract description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005282 brightening Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000001954 sterilising effect Effects 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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Abstract
The GaN base green light LED epitaxial structure of the present invention with gradual change In component p-type InGaN conductive layers and preparation method thereof；The structure includes substrate, GaN nucleating layers, GaN cushions, N-type GaN conductive layers, multi-quantum well active region and the gradual change In component p-type InGaN conductive layers being sequentially connected from bottom to top；Multi-quantum well active region is built alternately superposition to InGaN SQWs and GaN quantum by 5-15 and constituted；The thickness of the gradual change In components p-type InGaN conductive layers is 200-400nm；The In atomic percents of gradual change In component p-type InGaN conductive layers are reduced to 0 along the direction of growth by 15% gradual change.The present invention replaces traditional pGaN conductive layers using gradual change In component InGaN conductive layers, can reduce damage of the p-type layer growth course to SQW, improves hole injection efficiency, reduces LED operating voltage, improves the photoelectric efficiency of green light LED.
Description
Technical field
It is more particularly to a kind of that there is gradual change In the present invention relates to a kind of light emitting diode epitaxial structure and preparation method thereof
GaN base green light LED epitaxial structure of component pInGaN conductive layers and preparation method thereof, belongs to technical field of semiconductors.
Background technology
Light emitting diode (referred to as " LED ") is a kind of semiconducting solid luminescent device, and it is using inside semi-conducting material
Radiation recombination occurs for conduction band electron and valence band hole, is so that form of photons releases energy and directly lights.It is different by designing
Semi-conducting material energy gap, light emitting diode can launch the light of the different-waveband from infrared to ultraviolet.
Iii-nitride light emitting devices with its have the advantages that efficiently, energy-conservation, long-life and small volume worldwide
Obtain broad development.Emission wavelength 210~365nm UV LED, because of its modulating frequency height, small volume, mercury-free
The advantages of environmental protection and high sterilization potentiality, have in fields such as sterilizing, biological medicine, illumination, storage and communications and widely should
Use prospect；Emission wavelength 440~470nm blue light-emitting diode because its energy consumption is low, long lifespan and the advantages of environmental protection,
Illumination, brightening and display field have huge application prospect；Emission wavelength 500~550nm green light LED,
Brightening and display and RGB three primary colours lighting field also have extraordinary application prospect.
The internal quantum efficiency of current GaN base green light LED is very low, less than the half of blue-ray LED efficiency, which greatly limits
Application of the RGB white light LEDs in general illumination and visible light communication field.The main cause for causing green light LED quantum efficiency low has
The electron-hole wave function that InGaN SQW crystal mass is poor, polarity effect is caused separates serious etc..Countries in the world scientist
In order to which the quantum efficiency for improving green light LED has put into great effort.
The content of the invention
The present invention is for the problem of existing GaN base green light LED hole injection efficiency is low, luminous efficiency is poor, proposing a kind of tool
There is the GaN base green light LED epitaxial structure of gradual change In component pInGaN conductive layers.
The present invention also provides a kind of preparation method of above-mentioned GaN base green light LED epitaxial structure.
Technical scheme is as follows：
GaN base green light LED epitaxial structure with gradual change In component p-type InGaN conductive layers, including connect successively from bottom to top
Substrate, GaN nucleating layers, GaN cushions, N-type GaN conductive layers, multi-quantum well active region and the gradual change In component p-types InGaN connect
Conductive layer；The multi-quantum well active region is built alternately superposition to InGaN SQWs and GaN quantum by 5-15 and constituted；The gradual change
The thickness of In component p-type InGaN conductive layers is 200-400nm；The In atoms hundred of the gradual change In components p-type InGaN conductive layers
Divide than being reduced to 0 by 15% gradual change along the direction of growth.
Further to realize the object of the invention, it is preferable that the thickness of the substrate is 300-500um.
Preferably, the thickness of the GaN nucleating layers 2 is 20-50nm.
Preferably, the thickness of the GaN cushions 3 is 2-4um.
Preferably, the thickness of the N-type GaN conductive layers 4 is 2-4um.
Preferably, the thickness of the InGaN SQWs 5 is 2.5-3.5nm.
Preferably, the thickness that the GaN quantum build 6 is 5-15nm.
Preferably, the thickness of the multi-quantum well active region is 100-500nm.
The growing method of the GaN base green light LED epitaxial structure with gradual change In component p-type InGaN conductive layers, including
Following steps：
1) place the substrate into Metallo-Organic Chemical Vapor chemical deposition equipment, to substrate slice in high temperature, hydrogen atmosphere
Cleaned, remove the pollutant of substrate surface；
2) temperature is reduced to 550 DEG C, in step 1) described in substrate slice on grow GaN nucleating layers；
3) reaction chamber temperature is brought up to 1100 DEG C, in step 2) described in nucleating layer on grow GaN cushions；
4) in step 3) described in GaN layer on grow N-type GaN conductive layers, control doping concentration be 8 × 1018cm‐3；
5) reaction chamber temperature is reduced to 850 DEG C, in step 4) described in N-type GaN conductive layers on growth GaN quantum build；
6) circulating repetition following steps a) and step b) 5-10 times, obtains InGaN/GaN multi-quantum well active regions：
A) reaction chamber temperature is reduced to 750 DEG C, and InGaN SQWs are grown on the InGaN quantum described in step a) are built；
B) reaction chamber temperature is risen into 850 DEG C, continued growth GaN quantum barrier layers；
7) reative cell is passed through two luxuriant magnesium, ammonia, nitrogen, trimethyl gallium and trimethyl indium, wherein two luxuriant magnesium, ammonia, nitrogen
It is 300cc, 16000cc, 21000cc, 11cc respectively with TMGa flow rate, reaction chamber temperature is kept for 850 DEG C, and growth course is led to
Enter the trimethyl indium flow of reative cell by 500cc linear reductions to 0cc, in step 6) described in active area on growing P-type InGaN
Conductive layer, the thickness for controlling the gradual change In components p-type InGaN conductive layers is 200-400nm.
Preferably, step 7) control doping concentration be 5 × 1019cm‐3。
The multi-quantum well active region includes InGaN SQWs and GaN quantum are built.The In components of the InGaN SQWs
Emission wavelength is determined expected from LED.
Relative to prior art, the present invention has the advantages that：
1) present invention is poor for existing GaN base green light LED hole injection efficiency, the problems such as Quantum well active district is of poor quality,
A kind of GaN base green light LED epitaxial structure of use gradual change In components p-type InGaN conductive layers is proposed, its p-type InGaN conductive layers
100 DEG C lower than traditional pGaN or so of growth temperature, can reduce damage of the p-type layer growth course to SQW.
2) present invention can avoid resistance of the heterojunction boundary potential barrier to hole using the pInGaN conductive layers of gradual change In components
Gear is acted on, while reducing Ohmic contact barrier height, reduces voltage, the final opto-electronic conversion effect for improving GaN base green light LED device
Rate.
Brief description of the drawings
Fig. 1 is tradition LED GaN epitaxial structure schematic diagram.
Fig. 2 has the signal of the GaN base green light LED epitaxial structure of gradual change In component p-type InGaN conductive layers for the present invention
Figure.
Fig. 3 is LED of the present invention and luminous power curves of the tradition LED under different injected current densities；In figure, ordinate
For relative light intensity, unit is mcd, and abscissa is Injection Current, and unit is mA；
Shown in figure：Substrate 1, GaN nucleating layers 2, GaN cushions 3, N-type GaN conductive layers 4, InGaN SQWs 5, GaN amounts
Son is built 6, gradual change In component p-type InGaN conductive layers 7, multi-quantum well active region 8, p-type AlGaN electronic barrier layers 9, p-type GaN and led
Electric layer 10.
Embodiment
To more fully understand the present invention, the present invention is described further with reference to the accompanying drawings and examples, but this hair
Bright embodiment not limited to this.
Embodiment 1
As shown in Fig. 2 the GaN base green light LED epitaxial structure with gradual change In component p-type InGaN conductive layers, from bottom to top
It is followed successively by substrate 1, GaN nucleating layers 2, GaN cushions 3, N-type GaN conductive layers 4, multi-quantum well active region 8 and gradual change In components p
Type InGaN conductive layers 7；Wherein, multi-quantum well active region 8 builds 6 alternating layer stacked groups by 10 pairs of InGaN SQWs 5 and GaN quantum
Into.Substrate 1 is Sapphire Substrate, and the indium component of gradual change In component p-type InGaN conductive layers 7 gradually decreases to 0 by 10%.
The growth step of GaN base green light LED epitaxial structure with gradual change In component p-type InGaN conductive layers is as follows：
(1) Sapphire Substrate is put into Metallo-Organic Chemical Vapor chemical deposition equipment by, is passed through hydrogen, reacts room temperature
Degree is increased to 1300 degrees Celsius, and HIGH TEMPERATURE PURGE is carried out to substrate slice.
(2) temperature is reduced to 550 degrees Celsius by, and reative cell is passed through ammonia, hydrogen and trimethyl gallium, described in step (1)
Substrate 1 on grow 30nm GaN nucleating layers 2.
(3) reaction chamber temperature is brought up to 1100 degree by, is passed through ammonia, hydrogen and trimethyl gallium, described in step (2)
3um GaN cushions 3 are grown on GaN nucleating layers 2.
(4) reative cells are passed through silane, ammonia, hydrogen and trimethyl gallium, and N-type is grown in the GaN layer 3 described in step (3)
GaN conductive layers 4, thickness is 3um, and doping concentration is 8 × 1018cm‐3。
(5) reative cells are passed through ammonia, nitrogen, trimethyl gallium and trimethyl indium, and reaction chamber temperature is reduced to 750 DEG C, in step
Suddenly InGaN SQWs 5 are grown on the N-type GaN conductive layers 4 described in (4), are InGaN potential well layers, thickness is 3nm.
(6) reative cells are passed through silane, ammonia, nitrogen, trimethyl gallium, and reaction chamber temperature is reduced to 850 DEG C, in step (5)
GaN quantum are grown in described InGaN potential wells 5 and build 6, are GaN barrier layers, thickness is 10nm.
(7) is repeated in step (5) and (6) totally 9 times, obtains 10 pairs of InGaN SQWs 5 altogether and GaN quantum are built 6 and handed over
It is InGaN/InGaN multi-quantum well active regions, thickness is 130nm for the multi-quantum well active region 8 of stacking composition.
(8) reative cells are passed through two luxuriant magnesium, ammonia, nitrogen, trimethyl gallium and trimethyl indium, wherein two luxuriant magnesium, ammonia, nitrogen
Gas and TMGa flow rate are 300cc, 16000cc, 21000cc, 11cc respectively, and growth course is passed through the trimethyl gallium of reative cell
Flow is by 500cc linear reductions to 0cc, and 850 degrees Celsius of reaction chamber temperature holding is active in the MQW described in step (7)
Gradual change In component pInGaN conductive layer 7, thickness 300nm are grown in area 8, it is 5 × 10 to control doping concentration19cm‐3。
Fig. 1 is traditional LED epitaxial structure, and substrate 1, GaN nucleating layers 2, GaN cushions 3, N are followed successively by from bottom to top
Type GaN conductive layers 4, InGaN SQWs 5, GaN quantum build 6, multi-quantum well active region 8, p-type AlGaN electronic barrier layers 9, p-type
GaN conductive layers 10；Gradual change In component p-type InGaN conductive layers 7；P-type AlGaN electronic barrier layers 9, p-type GaN conductive layers 10 and
GaN nucleating layers 2, GaN cushions 3, N-type GaN conductive layers 4, InGaN SQWs 5, GaN quantum build 6, multi-quantum well active region 8 all
Grown by MOCVD, the effect of p-type AlGaN electronic barrier layers 9 is to stop electronics leakage, the effect of p-type GaN conductive layers 10 is
Hole is provided.
The present embodiment has gradual change In component p-types InGaN GaN base green light LED epitaxial structure real by changing In flows
Existing gradual change In component p-type InGaN conductive layers, growth course In flows are reduced to cc by 500cc.
A diameter of 1mm indium pellet is pressed in the center and peripheral of two kinds of samples of Fig. 1 and Fig. 2, the indium pellet at center is positive pole, side
The indium pellet of edge is negative pole, and its current versus brightness curve, as Fig. 3, electroluminescent spectrum are tested in electroluminescent light spectrometer equipment
Instrument equipment is test equipment, and equipment can directly give brightness data；Fig. 3 is LED of the present invention and tradition LED in different injections
Light intensity curve under current density, in figure, ordinate is relative light intensity, and unit is mcd, and abscissa is Injection Current, unit
It is mA；From figure 3, it can be seen that the LED of present invention light intensity is apparently higher than traditional LED.
Green light LED epitaxial structure with gradual change In component p-type InGaN conductive layers, it is active that hole is injected into MQW
PAlGaN barrier layers need not be crossed in area, while gradual change In components can produce polarization charge, further improve green light LED
Hole injection efficiency, therefore the luminous efficiency of green light LED can be improved, Fig. 3 test result displays that having gradually for the present invention
The green LED strength ratio tradition LED for becoming In component p-type InGaN conductive layers is higher.Hole of the present invention is injected into MQW
PAlGaN barrier layers need not be crossed on active area, while gradual change In components can produce polarization charge, further improve green glow
LED hole injection efficiency.From figure 3, it can be seen that using the green light LED epitaxial structure of the present invention, luminous strength ratio tradition LED
Epitaxial structure luminance raising 12%, this is significant for the energy consumption of reduction LED full-color display screen and RGB White-light LED illuminations.
Embodiment 2
As shown in Fig. 2 the GaN base green light LED epitaxial structure with gradual change In component p-type InGaN conductive layers, from bottom to top
It is followed successively by substrate 1, GaN nucleating layers 2, GaN cushions 3, N-type GaN conductive layers 4, multi-quantum well active region 8 and gradual change In components p
Type InGaN conductive layers 7；Wherein, multi-quantum well active region 8 is built 6 by 5 InGaN SQWs 5 and GaN quantum and alternately laminated constituted.
Substrate 1 is Sapphire Substrate, and the indium component of gradual change In component p-type InGaN conductive layers 7 gradually decreases to 0 by 5%.
Epitaxial growth steps are as follows：
(1) Sapphire Substrate is put into Metallo-Organic Chemical Vapor chemical deposition equipment by, is passed through hydrogen, reacts room temperature
Degree is increased to 1300 degrees Celsius, and HIGH TEMPERATURE PURGE is carried out to substrate slice.
(2) temperature is reduced to 550 degrees Celsius by, and reative cell is passed through ammonia, hydrogen and trimethyl gallium, described in step (1)
Substrate 1 on grow 20nm GaN nucleating layers 2.
(3) reaction chamber temperature is brought up to 1100 degree by, is passed through ammonia, hydrogen and trimethyl gallium, described in step (2)
2um GaN cushions 3 are grown on nucleating layer 2.
(4) reative cells are passed through silane, ammonia, hydrogen and trimethyl gallium, and N-type is grown in the GaN layer 3 described in step (3)
GaN conductive layers 4, thickness is 2um, doping concentration 8 × 1018cm‐3。
(5) reative cells are passed through ammonia, nitrogen, trimethyl gallium and trimethyl indium, and reaction chamber temperature is reduced to 750 degrees Celsius
Degree, InGaN SQWs 5 are grown on the N-type GaN conductive layers 4 described in step (4), are InGaN potential well layers, thickness is 2.5nm.
(6) reative cells are passed through silane, ammonia, nitrogen, trimethyl gallium, and reaction chamber temperature is reduced to 850 degrees centigrade,
GaN quantum are grown on InGaN potential well layers described in step (5) and build 6, are GaN barrier layers, thickness is 5nm.
(7) is repeated in step (5) and (6) totally 14 times, obtains 15 InGaN SQWs 5 and GaN quantum build 6 alternating layers
The multi-quantum well active region 8 being stacked, is InGaN/InGaN multi-quantum well active regions, and thickness is 112.5nm.
(8) reative cells are passed through two luxuriant magnesium, ammonia, nitrogen, trimethyl gallium and trimethyl indium, wherein two luxuriant magnesium, ammonia, nitrogen
Gas and TMGa flow rate are 300cc, 16000cc, 21000cc, 11cc respectively, and reaction chamber temperature is kept for 850 degrees Celsius, in step
Suddenly gradual change In component pInGaN conductive layers 7 are grown in the multi-quantum well active region 8 described in (7), growth course is passed through reative cell
Trimethyl indium flow is by 500cc linear reductions to 0cc, thickness 200nm, and it is 5 × 10 to control doping concentration19cm‐3。
Compared with Example 1, the main distinction is that each thickness degree is slightly thinned to the present embodiment, does not have obvious shadow to LED performances
Ring, brightness is still higher than traditional LED.
Embodiment 3
As shown in Fig. 2 the GaN base green light LED epitaxial structure with gradual change In component p-type InGaN conductive layers is from bottom to top
It is followed successively by substrate 1, GaN nucleating layers 2, GaN cushions 3, N-type GaN conductive layers 4, multi-quantum well active region 8 and gradual change In components p
Type InGaN conductive layers 7；Wherein, multi-quantum well active region 8 is built 6 by 5 InGaN SQWs 5 and GaN quantum and alternately laminated constituted.
Substrate 1 is Sapphire Substrate, and the indium component of gradual change In component p-type InGaN conductive layers 7 gradually decreases to 0 by 5%.
Epitaxial growth steps are as follows：
(1) Sapphire Substrate is put into Metallo-Organic Chemical Vapor chemical deposition equipment by, is passed through hydrogen, reacts room temperature
Degree is increased to 1300 degrees Celsius, and HIGH TEMPERATURE PURGE is carried out to substrate slice.
(2) temperature is reduced to 550 degrees Celsius by, and reative cell is passed through ammonia, hydrogen and trimethyl gallium, described in step (1)
Substrate 1 on grow 50nm GaN nucleating layers 2.
(3) reaction chamber temperature is brought up to 1100 degree by, is passed through ammonia, hydrogen and trimethyl gallium, described in step (2)
4um GaN cushions 3 are grown on nucleating layer 2.
(4) reative cells are passed through silane, ammonia, hydrogen and trimethyl gallium, and N-type is grown in the GaN layer 3 described in step (3)
GaN conductive layers 4, thickness is 4um, doping concentration 8 × 1018cm‐3。
(5) reative cells are passed through ammonia, nitrogen, trimethyl gallium and trimethyl indium, and reaction chamber temperature is reduced to 750 degrees Celsius
Degree, InGaN SQWs 5 are grown on the N-type GaN conductive layers 4 described in step (4), are InGaN potential well layers, thickness is 3.5nm.
(6) reative cells are passed through silane, ammonia, nitrogen, trimethyl gallium, and reaction chamber temperature is reduced to 850 degrees centigrade,
GaN quantum are grown on InGaN potential well layers described in step (5) and build 6, are GaN barrier layers, thickness is 15nm.
(7) is repeated in step (5) and (6) totally 4 times, obtains 5 InGaN SQWs 5 and GaN quantum base 6 is alternately laminated
The multi-quantum well active region 8 of composition, is InGaN/InGaN multi-quantum well active regions, and thickness is 92.5nm.
(8) reative cells are passed through two luxuriant magnesium, ammonia, nitrogen, trimethyl gallium and trimethyl indium, wherein two luxuriant magnesium, ammonia, nitrogen
Gas and TMGa flow rate are 300cc, 16000cc, 21000cc, 11cc respectively, and growth course is passed through the trimethyl indium of reative cell
Flow is by 500cc linear reductions to 0cc, and 850 degrees Celsius of reaction chamber temperature holding is active in the MQW described in step (7)
Gradual change In component pInGaN conductive layer 7, thickness 400nm are grown in area 8, it is 5 × 10 to control doping concentration19cm‐3。
Compared with Example 1, the main distinction is that each thickness degree slightly thickeies to the present embodiment, does not have obvious shadow to LED performances
Ring, brightness is still higher than traditional LED.
Claims (9)
1. the GaN base green light LED epitaxial structure with gradual change In component p-type InGaN conductive layers, it is characterised in that including under
And on the substrate, GaN nucleating layers, GaN cushions, N-type GaN conductive layers, multi-quantum well active region and the gradual change In groups that are sequentially connected
Divide p-type InGaN conductive layers；The multi-quantum well active region builds alternately superposition group by 5-15 to InGaN SQWs and GaN quantum
Into；The thickness of the gradual change In components p-type InGaN conductive layers is 200-400nm；The gradual change In components p-type InGaN conductive layers
In atomic percents be reduced to 0 by 15% gradual change along the direction of growth.
2. the GaN base green light LED epitaxial structure according to claim 1 with gradual change In component p-type InGaN conductive layers,
Characterized in that, the thickness of the substrate is 300-500um.
3. the GaN base green light LED epitaxial structure according to claim 1 with gradual change In component p-type InGaN conductive layers,
Characterized in that, the thickness of the GaN nucleating layers 2 is 20-50nm.
4. the GaN base green light LED epitaxial structure according to claim 1 with gradual change In component p-type InGaN conductive layers,
Characterized in that, the thickness of the GaN cushions 3 is 2-4um.
5. the GaN base green light LED epitaxial structure according to claim 1 with gradual change In component p-type InGaN conductive layers,
Characterized in that, the thickness of the N-type GaN conductive layers 4 is 2-4um.
6. the GaN base green light LED epitaxial structure according to claim 1 with gradual change In component p-type InGaN conductive layers,
Characterized in that, the thickness of the InGaN SQWs 5 is 2.5-3.5nm.
7. the GaN base green light LED epitaxial structure according to claim 1 with gradual change In component p-type InGaN conductive layers,
Characterized in that, the thickness that the GaN quantum build 6 is 5-15nm.
8. the GaN base green light LED epitaxial structure according to claim 1 with gradual change In component p-type InGaN conductive layers,
Characterized in that, the thickness of the multi-quantum well active region is 100-500nm.
9. there is the GaN base green light LED epitaxial structure of gradual change In component p-type InGaN conductive layers described in claim any one of 1-8
Growing method, it is characterised in that comprise the following steps：
1) place the substrate into Metallo-Organic Chemical Vapor chemical deposition equipment, substrate slice is carried out in high temperature, hydrogen atmosphere
Cleaning, removes the pollutant of substrate surface；
2) temperature is reduced to 550 DEG C, in step 1) described in substrate slice on grow GaN nucleating layers；
3) reaction chamber temperature is brought up to 1100 DEG C, in step 2) described in nucleating layer on grow GaN cushions；
4) in step 3) described in GaN layer on grow N-type GaN conductive layers, control doping concentration be 8 × 1018cm‐3；
5) reaction chamber temperature is reduced to 850 DEG C, in step 4) described in N-type GaN conductive layers on growth GaN quantum build；
6) circulating repetition following steps a) and step b) 5-10 times, obtains InGaN/GaN multi-quantum well active regions：
A) reaction chamber temperature is reduced to 750 DEG C, and InGaN SQWs are grown on the InGaN quantum described in step a) are built；
B) reaction chamber temperature is risen into 850 DEG C, continued growth GaN quantum barrier layers；
7) reative cell is passed through two luxuriant magnesium, ammonia, nitrogen, trimethyl gallium and trimethyl indium, wherein two luxuriant magnesium, ammonia, nitrogen and three
Methyl gallium flow is 300cc, 16000cc, 21000cc, 11cc respectively, and reaction chamber temperature is kept for 850 DEG C, and growth course is passed through instead
The trimethyl indium flow of room is answered by 500cc linear reductions to 0cc, in step 6) described in active area on growing P-type InGaN it is conductive
Layer, the thickness for controlling the gradual change In components p-type InGaN conductive layers is 200-400nm.
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| CN107808910A (en) * | 2017-09-23 | 2018-03-16 | 苏州思创源博电子科技有限公司 | A kind of preparation method of LED epitaxial structure |
| CN114242861A (en) * | 2021-12-15 | 2022-03-25 | 江苏第三代半导体研究院有限公司 | Quantum well light emitting layer structure, growth method and epitaxial wafer |
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| CN104134732A (en) * | 2014-07-24 | 2014-11-05 | 映瑞光电科技(上海)有限公司 | Epitaxial structure for solving efficiency drop of GaN-based LED (Light Emitting Diode) |
| CN104282812A (en) * | 2014-10-11 | 2015-01-14 | 北京工业大学 | GaN-based green light LED structure with p type buffering layer and growing method of GaN-based green light LED structure |
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