CN107808910A - A kind of preparation method of LED epitaxial structure - Google Patents
A kind of preparation method of LED epitaxial structure Download PDFInfo
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- CN107808910A CN107808910A CN201710870742.3A CN201710870742A CN107808910A CN 107808910 A CN107808910 A CN 107808910A CN 201710870742 A CN201710870742 A CN 201710870742A CN 107808910 A CN107808910 A CN 107808910A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
Abstract
The invention discloses a kind of preparation method of LED epitaxial structure, the silicon substrate that this method present invention is cleaned using special process, the silicon substrate has the advantages that to easily remove, radioresistance, thermal conductivity height, high temperature resistant, chemical property are relatively stable, intensity is higher, with very high reliability, the gallium nitride nano-pillar LED based on silicon substrate can be widely applied to high-temperature device；The epitaxial structure that the inventive method is formed includes substrate, stacks gradually to form the cushion in the substrate, N-type GaN layer, InaGa1‑aN/GaN current extendings, InbGa1‑bN/IncGa1‑cN luminescent layers, InGaN/GaN MQWs and p-type GaN layer, there is bigger light-emitting area, the problem of effectively avoiding efficiency rapid drawdown, and total reflection loss can be reduced；The present invention can avoid barrier effect of the heterojunction boundary potential barrier to hole using the pInGaN conductive layers of gradual change In components, while reduce Ohmic contact barrier height, reduce voltage, further improve the photoelectric transformation efficiency of LED component.
Description
Technical field
The present invention relates to LED preparation method, and in particular to a kind of preparation method of LED epitaxial structure.
Background technology
Light emitting diode (Light-Emitting Diode, LED) is as a kind of novel energy-conserving, environmentally friendly solid-state illumination light
Source, there is efficiency height, small volume, in light weight, fast response time and long lifespan, it has been obtained extensively in many fields
General application, such as solid light source, large screen display, automobile tail light, traffic lights.
Nowadays, III-V race's semi-conducting material flourishes, and is entered in many fields among the life of people, its
Middle GaN has even more attracted the eyeball of many people as the important materials for preparing efficient LED.Compared with traditional material, GaN conducts
The representative of third generation semi-conducting material, there is excellent physics, chemical property, such as：Energy gap is wider, and heat endurance is good,
Electron mobility is very high, and a kind of still direct band-gap semicondictor material.
At present, the GaN base LED epitaxial layers of industrialization are mostly the multi-layer film structure of two dimension, although preparation process it is simple, into
This is low, but multi-layer film structure has many inadequate natural endowments, for example larger lattice mismatch between GaN and substrate be present, produces dislocation,
Non-radiative recombination center is formed, reduces internal quantum efficiency；In the presence of stronger piezoelectric polarization phenomenon, quantum confined Stark is produced
Effect, reduce Carrier recombination probability；Due to total reflection phenomenon between multilayer film be present, light extraction efficiency etc. is reduced,
Therefore two-dimentional multi-layer film structure is difficult to meet the needs of market is to high-power and high-luminance LED, and can overcome the three-dimensional of above deficiency
LED epitaxial structure is increasingly becoming the focus of scientific research personnel's research.The three-dimensional GaN base LED epitaxial structure of synthesis the most frequently used at present
Method, it is directly in Grown three-dimensional GaN micro-nanos with conventional semiconductors synthetic methods such as MOCVD, HVPE and MBE
Rice array, but many drawbacks be present in these methods, such as the pollution of catalyst is very difficult to avoid completely, cause the production of impurity defect
It is raw, influence LED luminescent properties.
In addition, the problem of GaN base light LED presence internal quantum efficiency is low at present, main cause has InGaN SQW crystal
Electron-hole wave function caused by of poor quality, polarity effect separates serious etc..Countries in the world scientist is in order to improve LED amount
Sub- efficiency has put into great effort.
The content of the invention
The present invention provides a kind of preparation method of LED epitaxial structure, the silicon that this method present invention is cleaned using special process
Substrate, the silicon substrate have easily remove, radioresistance, thermal conductivity height, high temperature resistant, chemical property are relatively stablized, intensity is higher etc. excellent
Point, there is very high reliability, the gallium nitride nano-pillar LED based on silicon substrate can be widely applied to high-temperature device；Present invention side
The epitaxial structure that method is formed includes substrate, stacks gradually to form the cushion in the substrate, N-type GaN layer, InaGa1-aN/GaN
Current extending, InbGa1-bN/IncGa1-cN luminescent layers, InGaN/GaN MQWs and p-type GaN layer, there is bigger light
Area, the problem of effectively avoiding efficiency rapid drawdown, and total reflection loss can be reduced；Multilayer polarization induced doping indium gallium nitrogen of the present invention
Material can form a built in field using its polarity effect, be lured on the heterogeneous interface in epitaxial wafer by big polarization difference
The two-dimensional hole gas of high concentration is given birth in artificial delivery, because two-dimensional hole gas has high hole concentration and high mobility, can be improved
Hole n type gallium nitride layer transverse movement, so as to improve the injection efficiency of carrier, while also to a certain extent can be to prevent
The only leakage of electronics, and then improve LED luminous efficiency and internal quantum efficiency；The present invention is led using the pInGaN of gradual change In components
Electric layer can avoid barrier effect of the heterojunction boundary potential barrier to hole, while reduce Ohmic contact barrier height, reduce voltage,
Further improve the photoelectric transformation efficiency of LED component.
To achieve these goals, the present invention provides a kind of preparation method of LED epitaxial structure, and the preparation method is included such as
Lower step：
（1）Preparing substrate
Silicon substrate is put into volume ratio as 1:Ultrasonic 3-5 minutes in 15 hydrofluoric acid and deionized water mixed solution, remove silicon lining
Basal surface oxide and pickup particle, ultrasonic 3-5 minutes in deionized water are placed into, surface impurity is removed, with dry nitrogen air-blowing
It is dry；
（2）Cushion is generated from substrate
Using MOCVD method, at 540-560 DEG C, reaction cavity pressure 350mbar- is kept
450mbar, it is passed through the NH that flow is 10000sccm-16000sccm3, 60sccm-80sccm TMGa, 140L/min-160L/
Min H2, Grown thickness be 20nm-30nm cushion GaN；
（3）N-type GaN layer, In are sequentially generated on the cushionaGa1-aN/GaN current extendings, InbGa1-bN/IncGa1-cN
Luminescent layer, InGaN/GaN MQWs and gradual change In component p-type InGaN conductive layers, wherein, the gradual change In component p-types
The In atomic percents of InGaN conductive layers are reduced to 0.5% along the direction of growth by 12% gradual change.
Preferably, in step（3）In, the InaGa1-aThe first floor of N/GaN current extendings is barrier material InaGa1-aN layers,
Next is trap material GaN layer, then repetition period barrier material InaGa1-aN layers, trap material GaN layer, last layer are barrier material
InaGa1-aN layers；InaGa1-aN/GaN current extendings gross thickness is 100-300nm, every layer of barrier material InaGa1-aN layers and trap material
The thickness for expecting GaN layer is 2-3nm.
Preferably, in the step（3）In, the InbGa1-bN/IncGa1-cThe first floor of N luminescent layers is barrier material
IncGa1-cN layers, it is secondly trap material InbGa1-bN layers, then repetition period barrier material IncGa1-cN layers, trap material InbGa1-bN
Layer, last layer is barrier material IncGa1-cN layers；InbGa1-bN/IncGa1-cThe gross thickness of N luminescent layers is 50-150nm, and every layer is built
Material IncGa1-cN layers and trap material InbGa1-bThe thickness of N layers is 2-3nm.
Preferably, 0.3≤a≤0.8,0.2≤b<c≤0.6.
Preferably, in the step（3）In, N-type GaN is doping Si N-type GaN layer, and its growth technique is：Keep reaction
It is cavity pressure, temperature-resistant, it is passed through the NH that flow is 30000sccm-45000sccm3, 200sccm-300sccm TMGa,
100L/min-120L/min H2, 20sccm-50sccm SiH4, 3 μm of -4 μm of doping Si of continued propagation N-type GaN, Si doping
Concentration 5E18atoms/cm3-1E19atoms/cm3；Reaction cavity pressure, temperature-resistant is kept, it is 30000sccm- to be passed through flow
60000sccm NH3, 300sccm-400sccm TMGa, 100L/min-120L/min H2, 6sccm-10sccm SiH4,
300 μm of -400 μm of doping Si of continued propagation N-type GaN, Si doping concentration 5E17atoms/cm3-1E18atoms/cm3。
Preferably, in step（3）In, InGaN/GaN MQW formation process is：Using molecular beam epitaxial growth work
Skill, growth temperature are 750-850 DEG C, are 4.0-5.0 × 10 in the pressure of reative cell-5Pa, line are 25-35, life than V/III values
Under the conditions of long speed is 0.4-0.5ML/s, InGaN/GaN MQWs are grown on obtained n-type doping gallium nitride layer.
Preferably, in step（3）In, gradual change In component p-type InGaN conductive layers are grown on InGaN/GaN MQWs,
The thickness for controlling the gradual change In components p-type InGaN conductive layers is 150-300nm.
The invention has the advantages that：
（1）The present invention using special process cleaning silicon substrate, the silicon substrate have easily remove, radioresistance, thermal conductivity it is high, resistance to
The advantages that high temperature, chemical property are relatively stable, intensity is higher, has very high reliability, the gallium nitride nano-pillar based on silicon substrate
LED can be widely applied to high-temperature device；
（2）The epitaxial structure that the inventive method is formed includes substrate, stacks gradually cushion, the N-type GaN to be formed in the substrate
Layer, InaGa1-aN/GaN current extendings, InbGa1-bN/IncGa1-cN luminescent layers, InGaN/GaN MQWs and p-type GaN layer,
With bigger light-emitting area, the problem of effectively avoiding efficiency rapid drawdown, and total reflection loss can be reduced；
（3）Multilayer polarization induced doping indium gallium nitrogen material of the present invention can form a built in field using its polarity effect,
The two-dimensional hole gas of high concentration is produced on heterogeneous interface in epitaxial wafer by big polarization difference induction, because two-dimensional hole gas has
There are high hole concentration and high mobility, transverse movement of the hole in n type gallium nitride layer can be improved, so as to improve carrier
Injection efficiency, while can also prevent the leakage of electronics to a certain extent, and then improve LED luminous efficiency and interior quantum
Efficiency；
（4）The present invention can avoid stop of the heterojunction boundary potential barrier to hole from making using the pInGaN conductive layers of gradual change In components
With, while Ohmic contact barrier height is reduced, reduce voltage, further improve the photoelectric transformation efficiency of LED component.
Embodiment
Embodiment one
Silicon substrate is put into volume ratio as 1:Ultrasound 3 minutes in 15 hydrofluoric acid and deionized water mixed solution, remove silicon substrate
Oxide on surface and pickup particle, ultrasound 3 minutes in deionized water are placed into, surface impurity is removed, is dried up with drying nitrogen.
Cushion is generated from substrate, using MOCVD method, at 540 DEG C, keeps reaction
Cavity pressure 350mbar, it is passed through the NH that flow is 10000sccm3, 60sccmTMGa, 140L/min H2, it is thick in Grown
Spend the cushion GaN for 20nm.
N-type GaN layer, In are sequentially generated on the cushion0.3Ga0.7N/GaN current extendings, In0.2Ga0.8N/
In0.25Ga0.75N luminescent layers, InGaN/GaN MQWs and gradual change In component p-type InGaN conductive layers, wherein, the gradual change In
The In atomic percents of component p-type InGaN conductive layers are reduced to 0.5% along the direction of growth by 12% gradual change.
The In0.3Ga0.7The first floor of N/GaN current extendings is barrier material In03Ga0.7N layers, it is secondly trap material GaN
Layer, then repetition period barrier material In0.3Ga0.7N layers, trap material GaN layer, last layer are barrier material In0.3Ga0.7N layers；
In0.3Ga0.7N/GaN current extendings gross thickness is 100nm, every layer of barrier material In0.3Ga0.7The thickness of N layers and trap material GaN layer
It is 2-3nm.
The In0.2Ga0.8N/In0.25Ga0.75The first floor of N luminescent layers is barrier material In0.25Ga0.75N layers, it is secondly trap material
Expect In0.2Ga0.8N layers, then repetition period barrier material In0.25Ga0.75N layers, trap material In0.2Ga0.8N layers, last layer are base material
Expect In0.25Ga0.75N layers；In0.2Ga0.8N/In0.25Ga0.75The gross thickness of N luminescent layers is 50nm, every layer of barrier material In0.25Ga0.75N
Layer and trap material In0.2Ga0.8The thickness of N layers is 2-3nm.
N-type GaN is doping Si N-type GaN layer, and its growth technique is：Reaction cavity pressure, temperature-resistant is kept, is passed through stream
Measure the NH for 30000sccm3, 200sccm TMGa, 100L/min H2, 20sccm SiH4, 3 μm of doping Si's of continued propagation
N-type GaN, Si doping concentration 5E18atoms/cm3；Reaction cavity pressure, temperature-resistant is kept, it is 30000sccm's to be passed through flow
NH3, 300sccm TMGa, 100L/min H2, 6sccm SiH4, 300 μm of doping Si of continued propagation N-type GaN, Si doping
Concentration 5E17atoms/cm3。
InGaN/GaN MQW formation process is：Using molecular beam epitaxial growth technique, growth temperature is 750 DEG C,
The pressure of reative cell is 4.0 × 10-5Pa, line are under the conditions of the 25, speed of growth is 0.4ML/s, in obtained N than V/III values
InGaN/GaN MQWs are grown in type doped gallium nitride layer.
Gradual change In component p-type InGaN conductive layers are grown on InGaN/GaN MQWs, control the gradual change In components p
The thickness of type InGaN conductive layers is 150nm.
Embodiment two
Silicon substrate is put into volume ratio as 1:Ultrasound 4 minutes in 15 hydrofluoric acid and deionized water mixed solution, remove silicon substrate
Oxide on surface and pickup particle, ultrasound 4 minutes in deionized water are placed into, surface impurity is removed, is dried up with drying nitrogen.
Cushion is generated from substrate, using MOCVD method, at 550 DEG C, keeps reaction
Cavity pressure 400mbar, it is passed through the NH that flow is 12000sccm3, 70sccm TMGa, 150L/min H2, in Grown
Thickness is 25nm cushion GaN.
N-type GaN layer, In are sequentially generated on the cushion0.6Ga0.4N/GaN current extendings, In0.25Ga0.75N/
In0.35Ga0.65N luminescent layers, InGaN/GaN MQWs and gradual change In component p-type InGaN conductive layers, wherein, the gradual change In
The In atomic percents of component p-type InGaN conductive layers are reduced to 0.5% along the direction of growth by 12% gradual change.
The InaGa1-aThe first floor of N/GaN current extendings is barrier material In0.6Ga0.4N/N layers, it is secondly trap material GaN
Layer, then repetition period barrier material In0.6Ga0.4N/ layers, trap material GaN layer, last layer are barrier material In0.6Ga0.4N/ layers；
In0.6Ga0.4N//GaN current extendings gross thickness is 100-300nm, every layer of barrier material In0.6Ga0.4N/ layers and trap material GaN layer
Thickness be 2-3nm.
The In0.25Ga0.75N/In0.35Ga0.65The first floor of N luminescent layers is barrier material In0.35Ga0.65N layers, it is secondly trap material
Expect In0.25Ga0.75N layers, then repetition period barrier material In0.35Ga0.65N layers, trap material InbGa1-bN layers, last layer are base material
Expect In0.35Ga0.65N layers；In0.25Ga0.75N/IncGa1-cThe gross thickness of N luminescent layers is 100nm, every layer of barrier material In0.35Ga0.65N
Layer and trap material In0.25Ga0.75The thickness of N layers is 2-3nm.
N-type GaN is doping Si N-type GaN layer, and its growth technique is：Reaction cavity pressure, temperature-resistant is kept, is passed through stream
Measure the NH for 40000sccm3, 250sccm TMGa, 110L/min H2, 30sccm SiH4, 3 μm of -4 μm of doping of continued propagation
Si N-type GaN, Si doping concentration 1E19atoms/cm3；Reaction cavity pressure, temperature-resistant is kept, being passed through flow is
40000sccm NH3, 350sccm TMGa, 110L/min H2, 8sccm SiH4, 350 μm of doping Si of continued propagation N-type
GaN, Si doping concentration 5E17atoms/cm3。
InGaN/GaN MQW formation process is：Using molecular beam epitaxial growth technique, growth temperature is 800 DEG C,
The pressure of reative cell is 4.5 × 10-5Pa, line are under the conditions of the 30, speed of growth is 0.45ML/s, in obtained N than V/III values
InGaN/GaN MQWs are grown in type doped gallium nitride layer.
Gradual change In component p-type InGaN conductive layers are grown on InGaN/GaN MQWs, control the gradual change In components p
The thickness of type InGaN conductive layers is 200nm.
Embodiment three
Silicon substrate is put into volume ratio as 1:Ultrasound 5 minutes in 15 hydrofluoric acid and deionized water mixed solution, remove silicon substrate
Oxide on surface and pickup particle, ultrasound 5 minutes in deionized water are placed into, surface impurity is removed, is dried up with drying nitrogen.
Cushion is generated from substrate, using MOCVD method, at 560 DEG C, keeps reaction
Cavity pressure 450mbar, it is passed through the NH that flow is 16000sccm3, 80sccm TMGa, 160L/min H2, in Grown
Thickness is 30nm cushion GaN.
N-type GaN layer, In are sequentially generated on the cushion0.8Ga0.2N/GaN current extendings, In0.4Ga0.6N/
In0.6Ga0.4N luminescent layers, InGaN/GaN MQWs and gradual change In component p-type InGaN conductive layers, wherein, the gradual change In groups
The In atomic percents of point p-type InGaN conductive layers are reduced to 0.5% along the direction of growth by 12% gradual change.
The In0.8Ga0.2The first floor of N/GaN current extendings is barrier material In0.8Ga0.2N layers, it is secondly trap material GaN
Layer, then repetition period barrier material In0.8Ga0.2N layers, trap material GaN layer, last layer are barrier material In0.8Ga0.2N layers；
In0.8Ga0.2N/GaN current extendings gross thickness is 300nm, every layer of barrier material In0.8Ga0.2The thickness of N layers and trap material GaN layer
Degree is 2-3nm.
The In0.4Ga0.6N/In0.6Ga0.4The first floor of N luminescent layers is barrier material In0.6Ga0.4N layers, it is secondly trap material
In0.4Ga0.6N layers, then repetition period barrier material In0.6Ga0.4N layers, trap material In0.4Ga0.6N layers, last layer are barrier material
In0.6Ga0.4N layers；In0.4Ga0.6N/In0.6Ga0.4The gross thickness of N luminescent layers is 50-150nm, every layer of barrier material In0.6Ga0.4N layers
With trap material In0.6Ga0.4The thickness of N layers is 2-3nm.
N-type GaN is doping Si N-type GaN layer, and its growth technique is：Reaction cavity pressure, temperature-resistant is kept, is passed through stream
Measure the NH for 45000sccm3, 300sccm TMGa, 120L/min H2, 50sccm SiH4, 4 μm of doping Si's of continued propagation
N-type GaN, Si doping concentration 1E19atoms/cm3；Reaction cavity pressure, temperature-resistant is kept, it is 60000sccm's to be passed through flow
NH3, 400sccm TMGa, 120L/min H2, 10sccm SiH4, 400 μm of doping Si of continued propagation N-type GaN, Si doping
Concentration 1E18atoms/cm3。
InGaN/GaN MQW formation process is：Using molecular beam epitaxial growth technique, growth temperature is 850 DEG C,
The pressure of reative cell is 5.0 × 10-5Pa, line are under the conditions of the 35, speed of growth is 0.5ML/s, in obtained N than V/III values
InGaN/GaN MQWs are grown in type doped gallium nitride layer.
Gradual change In component p-type InGaN conductive layers are grown on InGaN/GaN MQWs, control the gradual change In components p
The thickness of type InGaN conductive layers is 300nm.
Obviously, above-described embodiment is only intended to clearly illustrate example, and is not the restriction to embodiment.It is right
For those of ordinary skill in the art, other various forms of variations can also be made on the basis of the above description.
There is no necessity and possibility to exhaust all the enbodiments.And the obvious changes or variations thus extended out is still
Among protection scope of the present invention.
Claims (7)
1. a kind of preparation method of LED epitaxial structure, the preparation method comprise the following steps：
（1）Preparing substrate
Silicon substrate is put into volume ratio as 1:Ultrasonic 3-5 minutes in 15 hydrofluoric acid and deionized water mixed solution, remove silicon lining
Basal surface oxide and pickup particle, ultrasonic 3-5 minutes in deionized water are placed into, surface impurity is removed, with dry nitrogen air-blowing
It is dry；
（2）Cushion is generated from substrate
Using MOCVD method, at 540-560 DEG C, reaction cavity pressure 350mbar- is kept
450mbar, it is passed through the NH that flow is 10000sccm-16000sccm3, 60sccm-80sccm TMGa, 140L/min-160L/
Min H2, Grown thickness be 20nm-30nm cushion GaN；
（3）N-type GaN layer, In are sequentially generated on the cushionaGa1-aN/GaN current extendings, InbGa1-bN/IncGa1-cN
Luminescent layer, InGaN/GaN MQWs and gradual change In component p-type InGaN conductive layers, wherein, the gradual change In component p-types
The In atomic percents of InGaN conductive layers are reduced to 0.5% along the direction of growth by 12% gradual change.
2. the method as described in claim 1, it is characterised in that in step（3）In, the InaGa1-aN/GaN current extendings
The first floor be barrier material InaGa1-aN layers, next is trap material GaN layer, then repetition period barrier material InaGa1-aN layers, trap material
GaN layer, last layer are barrier material InaGa1-aN layers；InaGa1-aN/GaN current extendings gross thickness is 100-300nm, every layer
Barrier material InaGa1-aN layers and the thickness of trap material GaN layer are 2-3nm.
3. method as claimed in claim 1 or 2, it is characterised in that in the step（3）In, the InbGa1-bN/IncGa1- cThe first floor of N luminescent layers is barrier material IncGa1-cN layers, it is secondly trap material InbGa1-bN layers, then repetition period barrier material
IncGa1-cN layers, trap material InbGa1-bN layers, last layer are barrier material IncGa1-cN layers；InbGa1-bN/IncGa1-cN luminescent layers
Gross thickness be 50-150nm, every layer of barrier material IncGa1-cN layers and trap material InbGa1-bThe thickness of N layers is 2-3nm.
4. the method as described in claim 1-3 is any, it is characterised in that 0.3≤a≤0.8,0.2≤b<c≤0.6.
5. method as claimed in claim 4, it is characterised in that in the step（3）In, N-type GaN is doping Si N-type GaN
Layer, its growth technique are：Reaction cavity pressure, temperature-resistant is kept, is passed through the NH that flow is 30000sccm-45000sccm3、
200sccm-300sccm TMGa, 100L/min-120L/min H2, 20sccm-50sccm SiH4, 3 μm of -4 μ of continued propagation
M adulterates Si N-type GaN, Si doping concentration 5E18atoms/cm3-1E19atoms/cm3；Reaction cavity pressure, temperature-resistant is kept,
It is passed through the NH that flow is 30000sccm-60000sccm3, 300sccm-400sccm TMGa, 100L/min-120L/min
H2, 6sccm-10sccm SiH4, 300 μm of -400 μm of doping Si of continued propagation N-type GaN, Si doping concentration 5E17atoms/
cm3-1E18atoms/cm3。
6. method as claimed in claim 5, it is characterised in that in step（3）In, InGaN/GaN MQW formation process
For：Using molecular beam epitaxial growth technique, growth temperature is 750-850 DEG C, is 4.0-5.0 × 10 in the pressure of reative cell-5Pa、
It is raw on obtained n-type doping gallium nitride layer under the conditions of line than V/III values is 25-35, the speed of growth is 0.4-0.5ML/s
Long InGaN/GaN MQWs.
7. method as claimed in claim 6, it is characterised in that in step（3）In, grown on InGaN/GaN MQWs
Gradual change In component p-type InGaN conductive layers, the thickness for controlling the gradual change In components p-type InGaN conductive layers is 150-300nm.
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