CN102157657B - GaN-based light emitting diode and preparation method thereof - Google Patents
GaN-based light emitting diode and preparation method thereof Download PDFInfo
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Abstract
The invention relates to a GaN-based light emitting diode and a preparation method thereof. An initial growth layer, a GaN buffer layer, an n-type electronic injection layer, a quantum well structure electronic emission layer, a quantum well structure light emitting active layer, a p-type AlInGaN electronic stopping layer and a p-type cavity injection layer are grown on an epitaxial substrate of the light emitting diode sequentially; in the quantum well structure of the electronic emission layer, the width of a forbidden band of the AlInGaN quantum well layer in the emission layer is greater than that of the forbidden band of the AlInGaN quantum well in the light emitting active layer; and the AlInGaN quantum well layer of the quantum well structure electronic emission layer is triangular. The GaN-based light emitting diode has the advantages that the quantum well structure electronic emission layer can improve the efficiency of an electronic injection light emitting active layer effectively; and by the triangular quantum well structure of the electronic emission layer, the polarization effect of the epitaxial substrate of the light emitting diode can be reduced, and the working voltage of the light emitting diode is decreased.
Description
Technical field
The invention belongs to the light-emitting diode field, be specifically related to a kind of GaN based light-emitting diode, the present invention also comprises the manufacture method of this light-emitting diode.
Background technology
(Light-emitting diode LED) is a kind of injection electroluminescence device to light-emitting diode.Because the advantage of LED aspect energy-conservation and Based Intelligent Control is so receive extensive concern.Particularly,, therefore become the main flow direction of present LED development because its wavelength-tunable scope has covered whole visible light wave range and ultraviolet band in theory based on the LED of GaN sill (AlN, InN, GaN and its compound).Got into since 21 century, the LED technology that is representative with the basic blue-ray LED of GaN has all obtained huge advance made with commercially producing in the application in research, and its application is more and more openr.But; At present the luminous efficiency of LED is relatively low, from the epitaxial structure aspect, and electron hole injection efficiency and the combined efficiency in the further very high LED active area how; The problems such as operating voltage that how further to reduce LED are restricting the application development of LED, have to be solved.
The epitaxial structure of tradition LED is as shown in Figure 1, and light-emitting active layer wherein is a multi-quantum pit structure.The In component in tradition active layer district is shown in Figure 2 as illustrating with its band structure.Electronics and hole are directly inputted to the multiple quantum well active layer district from electron injecting layer and the hole injection layer that the active layer two ends are arranged respectively.Because the transport property of itself is mainly leaned in the input of charge carrier, has the low problem of charge carrier injection efficiency in traditional LED structure.For further improving the electron injection efficiency of LED active area, the related science personnel have proposed through before active area, inserting the method for an electron emission layer.For example United States Patent (USP) " LIGHT EMITTING DIODES WITH ASYMMETRIC RESONANCE TUNNELLING " (patent No. US 6614060B1) has been announced a kind of light emitting diode construction with individual layer InGaN or AlGaInP electron emission layer.Through this electron emission layer; More electronics is tired and be injected in the real light-emitting active layer in this lamination; Improved LED luminous efficiency (but list of references Soon Il Jung et al, " Photoluminescence study of InGaN/GaN multiple-quantum-well with Si-doped InGaN electron-emitting Layer " Current Applied Physics, vol.9; Pp.943-945,2009).
On the other hand, because GaN base LED extension generally is along the polar orientation growth at present, have polarity effect, the ability band in the active layer district of LED can be drawn high is deformed into triangle, thereby has increased the potential barrier of electric transmission, has increased the operating voltage of LED.Through in the InGaN/GaN SQW, adopting the triangle quantum well structure of In component-gradient; Can alleviate polar effect, and the operating voltage of reduction potential barrier and LED (can be with reference to R.J.Choi et al, " Efficient blue light-emitting diodes with InGaN/GaN triangular shaped multiple quantum wells "; Applied Physics Letters; Vol.82, pp.2764-2766,2003.).In addition, United States Patent (USP) " LIGHT EMITTING DIODES WITH GRADED COMPOSITION ACTIVE REGIONS " (patent No. US 6955933 B2) also discloses the LED structure of a kind of triangle SQW of the In of utilization component-gradient as light-emitting active layer.But; Because the present performance limitations of deposition technique such as MOCVD and pertinent instruments equipment; To the control of the triangle SQW of In component-gradient difficulty very; And the luminescent properties of LED is very responsive to the structure in the active layer, so the stability and the repeatability of the LED device of this structure have much room for improvement.
Summary of the invention
The objective of the invention is to overcome the deficiency of prior art, design a kind of injection efficiency that improves electronics to active area, reduce the GaN based light-emitting diode of operating voltage.The present invention has provided the manufacture method of this light-emitting diode simultaneously, and this method does not have specific (special) requirements to growth apparatus and process conditions, also can not produce bigger change to follow-up growth and processing step, and can promote the luminous efficiency of diode again.
To achieve these goals, the light-emitting diode that the present invention relates to comprises following technical characterictic: on epitaxial substrate, utilizing the semiconductor sedimentation to grow successively has initial growth layer, resilient coating, n type electron injecting layer, quantum well structure electron emission layer, quantum well structure light-emitting active layer, p type electronic barrier layer and p type hole injection layer;
Said quantum well structure light-emitting active layer is Al
iIn
jGa
1-i-jN barrier layer and Al
xIn
yGa
1-x-ySQW that the N quantum well layer is staggeredly stacked or multi-quantum pit structure, and 0≤i≤1,0≤j≤1,0≤i+j≤1,0≤x≤1,0≤y≤1,0≤x+y≤1, said Al
iIn
jGa
1-i-jThe energy gap of N barrier layer is greater than Al
xIn
yGa
1-x-yThe energy gap of N quantum well layer;
Said quantum well structure electron emission layer is Al
kIn
LGa
1-k-LN barrier layer and Al
mIn
nGa
1-m-nSQW that the N quantum well layer is staggeredly stacked or multi-quantum pit structure, and 0≤k≤1,0≤L≤1,0≤k+L≤1,0≤m≤1,0≤n≤1,0≤m+n≤1, said Al
kIn
LGa
1-k-LThe energy gap of N barrier layer is always greater than Al
mIn
nGa
1-m-nThe energy gap of N quantum well layer, said Al
mIn
nGa
1-m-nThe energy gap of N quantum well layer is greater than the Al in the quantum well structure light-emitting active layer
xIn
yGa
1-x-yThe energy gap of N quantum well layer;
Said Al
kIn
LGa
1-k-LN barrier layer and Al
mIn
nGa
1-m-nThe Al component of N quantum well layer or In component gradually change on perpendicular to epitaxial substrate aufwuchsplate direction, thereby make Al
kIn
LGa
1-k-LN barrier layer and Al
mIn
nGa
1-m-nThe N quantum well layer have separately on the band structure or make up after have the triangular form characteristic.
Further, the Al of said quantum well structure electron emission layer
kIn
LGa
1-k-LThe thickness of N barrier layer is 5nm～20nm, Al
mIn
nGa
1-m-nThe thickness of N quantum well layer is 1nm～5nm; Said Al
kIn
LGa
1-k-LN barrier layer and Al
mIn
nGa
1-m-nThe In component of N quantum well layer or Al component gradually change on perpendicular to epitaxial substrate aufwuchsplate direction; Said barrier layer and quantum well layer be non-ly mix, the n type mixes or the p type mixes, its doping content is 0～1 * 10
19/ cm
3The periodicity that piles up SQW of said quantum well structure electron emission layer is 1～20.
The Al of said quantum well structure light-emitting active layer
iIn
jGa
1-i-jThe N barrier layer thickness is 5nm～20nm, Al
xIn
yGa
1-x-yThe thickness of N quantum well layer is 1nm～5nm; Said Al
iIn
jGa
1-i-jN barrier layer and Al
xIn
yGa
1-x-yThe N quantum well layer be non-ly mix, the n type mixes or the p type mixes, its doping content is 0～1 * 10
19/ cm
3The periodicity that piles up SQW of said quantum well structure light-emitting active layer is 1～20.
Said epitaxial substrate is Sapphire Substrate, silicon substrate or SiC substrate; Said initial growth layer is GaN layer or AlN layer; Said resilient coating is the transition zones that any or the combination of several kinds of compounds in GaN layer, AlN layer, InGaN layer, AlGaN layer, InAlN layer, the InGaAlN layer forms; Said n type electron injecting layer is among arbitrary in GaN layer, AlN layer, InGaN layer, AlGaN layer, InAlN layer, the InGaAlN layer or the n type doped layer of the preparation n type ohmic contact that is combined to form of several kinds of compounds; Said p type electronic barrier layer is Al
aIn
bGa
1-a-bN layer, wherein 0≤a≤1,0≤b≤1,0≤a+b≤1; Said p type hole injection layer is the p type doped layer of any or the preparation p type ohmic contact layer that formed by the combination of several kinds of compounds in GaN layer, InGaN layer, AlGaN layer, the InGaAlN layer.The thickness of said initial growth layer is 1～500nm; The thickness of described resilient coating is 20nm～3 μ m; The thickness of described n type electron injecting layer is 100nm～6 μ m, and doping content is 1 * 10
17/ cm
3～1 * 10
19/ cm
3The thickness of described p type electronic barrier layer is 0nm～100nm, and doping content is 1 * 10
17/ cm
3～1 * 10
19/ cm
3Described p type hole injection layer thickness is 10nm～1 μ m, and doping content is 1 * 10
17/ cm
3～1 * 10
19/ cm
3
The present invention also comprises the manufacture method of this GaN based light-emitting diode, comprises the steps:
Said Al
kIn
LGa
1-k-LThe energy gap of N barrier layer is always greater than Al
mIn
nGa
1-m-nThe energy gap of N quantum well layer;
Said Al
kIn
LGa
1-k-LN barrier layer and Al
mIn
nGa
1-m-nThe Al component of N quantum well layer or In component gradually change on perpendicular to substrate aufwuchsplate direction, thereby make Al
kIn
LGa
1-k-LN barrier layer and Al
mIn
nGa
1-m-nThe N quantum well layer have separately on the band structure or make up after have the triangular form characteristic;
Wherein, the combination that gradually changes through following one or any several kinds of modes of Al component or In component realizes in the step 2:
A, improve or reduce the flow of In or Al growth source gas gradually;
B, reduce or improve the growth temperature of AlInGaN material gradually;
C, reduce or the growth air pressure of rising AlInGaN material gradually.
Compared with prior art, GaN based light-emitting diode beneficial effect of the present invention is:
1, the energy gap of barrier layer is always greater than the energy gap of quantum well layer in the electron emission layer, and always greater than the energy gap of the quantum well layer in the active layer, promptly electron emission layer has shallow quantum well structure to the energy gap of quantum well layer.Compare with traditional light emitting diode construction, the electron emission layer ability effective saving electronics of shallow quantum well structure also is transmitted into the active layer district, increases the injection efficiency of electronics, thereby improves the luminous efficiency of light-emitting diode.Simultaneously, the sandwich construction of quantum well structure electron emission layer more has superiority in electronics savings and emission than general individual layer electron emission layer.
2, said quantum well structure electron emission layer forms the zone of In component or Al component-gradient on perpendicular to the direction of substrate surface, thereby makes barrier layer and quantum well layer on band structure, have the triangular form characteristic.This leg-of-mutton barrier layer and quantum well layer can be alleviated the polarity effect of epitaxial structure, further reduce the operating voltage of light-emitting diode.This triangle character does not change the growth and the structure in follow-up active layer district only at electron emission layer simultaneously, thereby improves bright dipping reliability and the repeatability of LED.
Description of drawings
Fig. 1 is the sectional view of light-emitting diode in the prior art;
Fig. 2 is the In component distribution schematic diagram and its band structure sketch map of light-emitting diode quantum well structure light-emitting active layer 6 in the prior art;
Fig. 3 is the sectional view of light-emitting diode of the present invention;
Fig. 4 is the quantum well structure electron emission layer 5 of a kind of embodiment of light-emitting diode of the present invention and the In component distribution schematic diagram and its band structure sketch map of quantum well structure light-emitting active layer 6;
Fig. 5 is the sketch map of the light-emitting diode in the case study on implementation 1 and the structure chart of quantum well structure electron emission layer 5 and quantum well structure light-emitting active layer 6 thereof.
Fig. 6 is the sketch map of the light-emitting diode in the case study on implementation 4 and the structure chart of quantum well structure electron emission layer 5 and quantum well structure light-emitting active layer 6 thereof.
Fig. 7 is the I-V curve chart of the light-emitting diode of light-emitting diode prepared in accordance with the present invention and general transmit layer structure
Fig. 8 be light-emitting diode prepared in accordance with the present invention and general transmit layer structure light-emitting diode go out the light characteristic comparison diagram.
Embodiment
For making the object of the invention and technical scheme clearer, below provide part practical implementation example of the present invention, so that the present invention is further specified, the present invention includes but be not limited only to following example:
The present invention is a kind of GaN based light-emitting diode with quantum well structure; With graphical or non-patterned Sapphire Substrate or silicon substrate or SiC substrate is epitaxial substrate 1; On said substrate, deposit initial growth layer 2, resilient coating 3, n type electron injecting layer 4, shallow quantum well structure electron emission layer 5, luminous layer 6, p type AlGaN electronic barrier layer 7 and the p type hole injection layer 8 of having chance with of quantum well structure successively with MOCVD, MBE, HVPE semiconductor deposition technology; Obtain having the light-emitting diode of the shallow quantum well structure of GaN base, as shown in Figure 3;
Said initial growth layer 2 is GaN layer or AlN layer, and thickness is 20nm～2 μ m;
Said resilient coating 3 is GaN layer, AlN layer, InGaN layer, AlGaN layer, InAlN layer, InGaAlN layer or the transition zone that is combined to form by above several kinds of compounds, and thickness is 20nm～2 μ m;
The n type doped layer of the preparation n type ohmic contact that said n type electron injecting layer 4 is combined to form for GaN layer, AlN layer, InGaN layer, AlGaN layer, InAlN layer, InGaAlN layer or by above several kinds of compounds, thickness is 100nm～5 μ m, doping content is 1 * 10
17/ cm
3～1 * 10
19/ cm
3
Said quantum well radiation active layer 6 is by barrier layer Al
iIn
jGa
1-i-j N 61 and quantum well layer Al
xIn
yGa
1-x-yThe active layer of the SQW that N 62 is staggeredly stacked to form or the light-emitting diode of multi-quantum pit structure, wherein 0≤i≤1,0≤j≤1; 0≤i+j≤1; 0≤x≤1,0≤y≤1,0≤x+y≤1 and said barrier layer 61 energy gaps are greater than the energy gap of said quantum well layer 62; Said Al
iIn
jGa
1-i-jThe thickness of N barrier layer 61 is 5nm～20nm, Al
xIn
yGa
1-x-yThe thickness of N quantum well layer 62 is 1nm～5nm.Said Al
iIn
jGa
1-i-jN barrier layer and Al
xIn
yGa
1-x-yThe N quantum well layer can for non-ly mix, the n type mixes or the p type mixes, its doping content is 0～1 * 10
19/ cm
3The periodicity that piles up SQW of said light-emitting active layer is 1～20.
Said quantum well structure electron emission layer 5 is by Al
kIn
LGa
1-k-LThe barrier layer 51 that the N material is formed and by Al
mIn
nGa
1-m-nThe SQW that the quantum well layer 52 that the N material is formed is staggeredly stacked to form or the electron emission layer of multi-quantum pit structure; 0≤k≤1,0≤L≤1,0≤k+L≤1 wherein; 0≤m≤1; The energy gap of 0≤n≤1,0≤m+n≤1 and said barrier layer 51 is always greater than the energy gap of said quantum well layer 52, and the energy gap of said quantum well layer 52 is greater than the energy gap of the quantum well layer 62 in the said active layer 6.The Al of said electron emission layer
kIn
LGa
1-k-LN barrier layer and Al
mIn
nGa
1-m-nN quantum well layer Al component or In component gradually change on perpendicular to substrate aufwuchsplate direction, thus make build and trap have separately on the band structure or make up after have the triangular form characteristic.The Al of said quantum well structure electron emission layer 5
kIn
LGa
1-k-LThe thickness of N barrier layer 51 is 5nm～20nm, Al
mIn
nGa
1-m-nThe thickness of the shallow quantum well layer 52 of N is 1nm～5nm.Said barrier layer and shallow quantum well layer can for non-ly mix, the n type mixes or the p type mixes, its doping content is 0～1 * 10
19/ cm
3The periodicity that piles up SQW of said electron emission layer is 1～20.
In actual conditions; Barrier layer 51 is the growth conditionss through control AlInGaN material with quantum well layer 52 in the said electron emission layer 5; Make it form the In component and the Al component of gradual change on perpendicular to substrate aufwuchsplate direction, thereby make it on band structure, have the triangular form characteristic.Concrete control method comprises: 1) through flow that improves or reduce In growth source gas gradually or the flow that improves or reduce Al growth source gas gradually, realize the gradual change control of In component and Al component; 2), realize the gradual change control of In component and Al component through reducing or improve the growth temperature of AlInGaN material gradually; 3) through reducing gradually or the growth air pressure of rising AlInGaN material, realize that the gradual change of In component and Al component is controlled; 4), realize the gradual change control of In component and Al component through the combination in any of above three kinds of methods.
Said p type AlGaN electronic barrier layer 7 is Al
aIn
bGa
1-a-bThe N layer, 0≤a≤1,0≤b≤1,0≤a+b≤1 wherein, thickness is 0nm～100nm, doping content is 1 * 10
17/ cm
3～1 * 10
19/ cm
3
The p type doped layer of the preparation p type ohmic contact layer that said p type hole injection layer 8 is combined to form for GaN layer, InGaN layer, AlGaN layer, InGaAlN layer or by above several kinds of compounds, thickness is 10nm～1 μ m, doping content is 1 * 10
17/ cm
3～1 * 10
19/ cm
3
Below be the method for making above-mentioned GaN based light-emitting diode:
Embodiment 1:
1, adopt common metal oxide vapor phase deposition (MOCVD) equipment, backing material 1 is non-graphical (0001) the face substrate of sapphire; Heating at high temperature, clean substrate; Reduce temperature then, growing GaN initial growth layer 2, thickness are 20nm;
2, on step 1 basis, raise temperature, the GaN layer carried out recrystallization, then growth successively:
GaN resilient coating 3, this layer are the non-GaN layer of mixing, and thickness is 1 μ m;
N type electron injecting layer 4, this layer is for mixing the GaN layer of Si, and thickness is 2.3 μ m;
3, on the basis of step 2, reduce the shallow quantum well structure electron emission layer 5 of growth to temperature, the barrier layer 51 and the shallow quantum well layer 52 in 3 cycles of growing altogether; Wherein:
Shallow quantum well layer 52 is InGaN of triangular structure, is the In component and becomes big non-doping InGaN from the bottom up gradually, and wherein the In component increases to 10% of maximum gradually from 0% (being the GaN material) of beginning, and thickness is 2.5nm;
4, on the basis of step 3, grown quantum well structure light-emitting active layer 6, the barrier layer 61 and the quantum well layer 62 in 3 cycles of growing altogether; Wherein:
5, on the basis of step 4, raise temperature, growing p-type hole injection layer 8, the GaN layer that this layer mixes for Mg, thickness is 150nm.
According to the I-V curve chart of the light-emitting diode of present embodiment preparation with go out light characteristic like Fig. 7, shown in 8.
1, adopt common metal oxide vapor phase deposition (MOCVD) equipment, backing material 1 is non-patterned silicon (a 0001) face substrate; Heating at high temperature, clean substrate; Low temperature then, growth A1N initial growth layer 2, thickness is 50nm;
2, on step 1 basis, heat up and growth successively:
GaN resilient coating 3, this layer are the non-GaN layer of mixing, and thickness is 1 μ m;
N type electron injecting layer 4, this layer is for mixing the GaN layer of Si, and thickness is 2.3 μ m;
3, on the basis of step 2, reduce the shallow quantum well structure electron emission layer 5 of growth, 3 cycles of growing altogether, barrier layer 51 and shallow quantum well layer 52 to temperature; Wherein:
Shallow quantum well layer 52 is InGaN of triangular structure, is the In component and becomes big non-doping InGaN from the bottom up gradually, and wherein the In component increases to 10% of maximum gradually from 0% (being the GaN material) of beginning, and thickness is 2.5nm;
4, on the basis of step 3, grown quantum well structure light-emitting active layer 6, the barrier layer 61 and the quantum well layer 62 in 8 cycles of growing altogether; Wherein:
Quantum well layer 62 is InGaN materials of non-doping, and thickness is 2.5nm;
5, on the basis of step 4, raise temperature and growth successively:
P type AlGaN electronic barrier layer 7, the Al that this layer mixes for Mg
0.2Ga
0.8N layer, thickness are 20nm;
P type hole injection layer 8, the GaN layer that this layer mixes for Mg, thickness is 150nm.
1, adopt common metal oxide vapor phase deposition (MOCVD) equipment, backing material 1 is patterned Sapphire Substrate, and figure is regularly arranged semicircle sphere, and aufwuchsplate is (0001) face; The high-temperature cleaning substrate; Reduce growing GaN initial growth layer 2 to temperature then, thickness is 20nm;
2, on step 1 basis, the GaN layer is carried out recrystallization to the temperature rising, then growth successively:
GaN resilient coating 3, this layer are the non-GaN layer of mixing, and thickness is 3 μ m;
N type electron injecting layer 4, this layer is for mixing the GaN layer of Si, and thickness is 2 μ m;
3, on the basis of step 2, reduce the shallow quantum well structure electron emission layer 5 of growth, 3 cycles of growing altogether, barrier layer 51 and shallow quantum well layer 52 to temperature;
Wherein: barrier layer 51 is GaN materials that Si mixes, and thickness is 7nm;
Shallow quantum well layer 52 is InGaN of triangular structure, is the In component and becomes big non-doping InGaN from the bottom up gradually, and wherein In component m increases to 10% of maximum gradually from 0% (being the GaN material) of beginning, and thickness is 2.5nm;
4, on the basis of step 3, grown quantum well structure light-emitting active layer 6, the barrier layer 61 and the quantum well layer 62 in 5 cycles of growing altogether;
Wherein: barrier layer 61 is AlInGaN materials of non-doping, and thickness is 7nm;
Quantum well layer 62 is AlInGaN materials of non-doping, and thickness is 2.5nm;
5, on the basis of step 4, heat up and growth successively:
P type AlGaN electronic barrier layer 7, the Al that this layer mixes for Mg
0.2Ga
0.8N layer, thickness are 20nm;
P type hole injection layer 8, the GaN layer that this layer mixes for Mg, thickness is 150nm.
Embodiment 4:
1, adopt common metal oxide vapor phase deposition (MOCVD) equipment, backing material 1 is non-graphical (0001) the face substrate of sapphire; The high-temperature cleaning substrate; Drop to growing GaN initial growth layer 2 to temperature then, thickness is 20nm;
2, on step 1 basis, the GaN layer is carried out recrystallization to the temperature rising, then growth successively:
GaN resilient coating 3, this layer are the non-GaN layer of mixing, and thickness is 1 μ m;
N type electron injecting layer 4, this layer is for mixing the GaN layer of Si, and thickness is 2.3 μ m;
3, on the basis of step 2, reduce the shallow quantum well structure electron emission layer 5 of growth to temperature, the barrier layer 51 and the shallow quantum well layer 52 in 3 cycles of growing altogether; Wherein:
The InGaN of the In component-gradient that shallow quantum well layer 52 is non-doping, the In component diminishes gradually from the bottom up, and wherein the In component is reduced to last 0% gradually from 10% of beginning; Thickness is 5nm;
4, on the basis of step 3, grown quantum well structure light-emitting active layer 6, the barrier layer 61 and the quantum well layer 62 in 5 cycles of growing altogether; Wherein:
Quantum well layer 62 is InGaN materials of non-doping, and thickness is 2.5nm;
5, on the basis of step 4, raise temperature, successively growth:
P type AlGaN electronic barrier layer 7, the Al that this layer mixes for Mg
0.2Ga
0.8N layer, thickness are 20nm;
P type hole injection layer 8, the GaN layer that this layer mixes for Mg, thickness is 150nm.
Claims (7)
1. GaN based light-emitting diode, it is characterized in that: on epitaxial substrate (1), utilizing the semiconductor sedimentation to grow successively has initial growth layer (2), resilient coating (3), n type electron injecting layer (4), quantum well structure electron emission layer (5), quantum well structure light-emitting active layer (6), p type electronic barrier layer (7) and p type hole injection layer (8);
Said quantum well structure light-emitting active layer (6) is Al
iIn
jGa
1-i-jN barrier layer (61) and Al
xIn
yGa
1-x-ySQW or multi-quantum pit structure that N quantum well layer (62) is staggeredly stacked, and 0≤i≤1,0≤j≤1,0≤i+j≤1,0≤x≤1,0≤y≤1,0≤x+y≤1, and Al
iIn
jGa
1-i-jThe energy gap of N barrier layer (61) is greater than Al
xIn
yGa
1-x-yThe energy gap of N quantum well layer (62);
Said quantum well structure electron emission layer (5) is Al
kIn
LGa
1-k-LN barrier layer (51) and Al
mIn
nGa
1-m-nSQW or multi-quantum pit structure that N quantum well layer (52) is staggeredly stacked, and 0≤k≤1,0≤L≤1,0≤k+L≤1,0≤m≤1,0≤n≤1,0≤m+n≤1; And Al
kIn
LGa
1-k-LThe energy gap of N barrier layer (51) is always greater than Al
mIn
nGa
1-m-nThe energy gap of N quantum well layer (52), Al
mIn
nGa
1-m-nThe energy gap of N quantum well layer (52) is greater than Al in the light-emitting active layer (6)
xIn
yGa
1-x-yThe energy gap of N quantum well layer (62);
Said Al
kIn
LGa
1-k-LN (51) barrier layer and Al
mIn
nGa
1-m-nThe Al component of N quantum well layer (52) or In component gradually change on perpendicular to epitaxial substrate (1) aufwuchsplate direction, thereby make Al
kIn
LGa
1-k-LN (51) barrier layer and Al
mIn
nGa
1-m-nN quantum well layer (52) have separately on the band structure or make up after have the triangular form characteristic.
2. GaN based light-emitting diode according to claim 1 is characterized in that: the Al of said quantum well structure electron emission layer (5)
kIn
LGa
1-k-LThe thickness of N barrier layer (51) is 5nm～20nm, Al
mIn
nGa
1-m-nThe thickness of N quantum well layer (52) is 1nm～5nm; Said Al
kIn
LGa
1-k-LN barrier layer (51) and Al
mIn
nGa
1-m-nThe Al component of N quantum well layer (52) or In component gradually change on perpendicular to epitaxial substrate (1) aufwuchsplate direction; Al in the said quantum well structure electron emission layer (5)
kIn
LGa
1-k-LN barrier layer (51) and Al
mIn
nGa
1-m-nN quantum well layer (52) for non-ly mix, the n type mixes or the p type mixes, its doping content is 0～1 * 10
19/ cm
3The periodicity that piles up SQW of said quantum well structure electron emission layer (5) is 1～20.
3. GaN based light-emitting diode according to claim 1 is characterized in that: the Al of said quantum well structure light-emitting active layer (6)
iIn
jGa
1-i-jN barrier layer (61) thickness is 5nm～20nm, Al
xIn
yGa
1-x-yThe thickness of N quantum well layer (62) is 1nm～5nm; Said Al
iIn
jGa
1-i-jN barrier layer (61) and Al
xIn
yGa
1-x-yN quantum well layer (62) for non-ly mix, the n type mixes or the p type mixes, its doping content is 0～1 * 10
19/ cm
3The periodicity that piles up SQW of said quantum well structure light-emitting active layer (6) is 1～20.
4. according to the said GaN based light-emitting diode of claim 1, it is characterized in that: said epitaxial substrate (1) is Sapphire Substrate, silicon substrate or SiC substrate; Said initial growth layer (2) is GaN layer or AlN layer; The transition zones that said resilient coating (3) forms for any or the combination of several kinds of compounds in GaN layer, AlN layer, InGaN layer, AlGaN layer, InAlN layer, the InGaAlN layer; Said n type electron injecting layer (4) is among arbitrary in GaN layer, AlN layer, InGaN layer, AlGaN layer, InAlN layer, the InGaAlN layer or the n type doped layer of the preparation n type ohmic contact that is combined to form of several kinds of compounds; Said p type electronic barrier layer (7) is Al
aIn
bGa
1-a-bN layer, wherein 0≤a≤1,0≤b≤1,0≤a+b≤1; Said p type hole injection layer (8) is the p type doped layer of any or the preparation p type ohmic contact layer that formed by the combination of several kinds of compounds in GaN layer, InGaN layer, AlGaN layer, the InGaAlN layer.
5. GaN based light-emitting diode according to claim 4 is characterized in that: the thickness of said initial growth layer (2) is 1～500nm; The thickness of described resilient coating (3) is 20nm～3 μ m; The thickness of described n type electron injecting layer (4) is 100nm～6 μ m, and doping content is 1 * 10
17/ cm
3～1 * 10
19/ cm
3The thickness of described p type electronic barrier layer (7) is 0nm～100nm, and doping content is 1 * 10
17/ cm
3～1 * 10
19/ cm
3Described p type hole injection layer (8) thickness is 10nm～1 μ m, and doping content is 1 * 10
17/ cm
3～1 * 10
19/ cm
3
6. the manufacture method of the said GaN based light-emitting diode of claim 1 is characterized in that comprising the steps:
Step 1, adopt semiconductor sedimentation growing GaN initial growth layer (2), resilient coating (3) and n type electron injecting layer (4) successively on epitaxial substrate (1);
Step 2, on the basis of step 1, grown quantum well structure electron emission layer (5), said quantum well structure electron emission layer (5) is Al
kIn
LGa
1-k-LN barrier layer (51) and Al
mIn
nGa
1-m-nSQW or multi-quantum pit structure that N quantum well layer (52) is staggeredly stacked to form;
Said Al
kIn
LGa
1-k-LThe energy gap of N barrier layer (51) is always greater than Al
mIn
nGa
1-m-nThe energy gap of N quantum well layer (52);
Said Al
kIn
LGa
1-k-LN barrier layer (51) and Al
mIn
nGa
1-m-nThe Al component of N quantum well layer (52) or In component gradually change on perpendicular to substrate aufwuchsplate direction, thereby make Al
kIn
LGa
1-k-LN barrier layer (51) and Al
mIn
nGa
1-m-nN quantum well layer (52) have separately on the band structure or make up after have the triangular form characteristic;
Step 3, on the basis of step 2, grown quantum well structure light-emitting active layer (6); Said quantum well structure light-emitting active layer (6) is by Al
iIn
jGa
1-i-jN barrier layer (61) and by Al
xIn
yGa
1-x-ySQW or multi-quantum pit structure that N quantum well layer (62) is staggeredly stacked to form, said Al
iIn
jGa
1-i-jN barrier layer (61) energy gap is greater than Al
xIn
yGa
1-x-yThe energy gap of N quantum well layer (62); Said Al
xIn
yGa
1-x-yThe energy gap of N quantum well layer (62) is less than Al in the electron emission layer (5)
mIn
nGa
1-m-nThe energy gap of N quantum well layer (52);
Step 4, on the basis of step 3, growing p-type AlGaN electronic barrier layer (7) and p type hole injection layer (8) successively.
7. the manufacture method of GaN based light-emitting diode according to claim 6 is characterized in that: specifically realize gradually changing of Al component in the said step 2 or In component through the one or any several kinds combination in the following method:
A, improve or reduce the flow of In or Al growth source gas gradually;
B, reduce or improve the growth temperature of AlInGaN material gradually;
C, reduce or the growth air pressure of rising AlInGaN material gradually.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1149684C (en) * | 1998-09-21 | 2004-05-12 | 国联光电科技股份有限公司 | High-brightness LED |
| US7122839B2 (en) * | 2004-10-29 | 2006-10-17 | Philips Lumileds Lighting Company, Llc | Semiconductor light emitting devices with graded composition light emitting layers |
| CN100392881C (en) * | 2005-06-23 | 2008-06-04 | 华南师范大学 | GaN-based LED extension sheet and its preparation method |
-
2011
- 2011-01-26 CN CN201110027944A patent/CN102157657B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1149684C (en) * | 1998-09-21 | 2004-05-12 | 国联光电科技股份有限公司 | High-brightness LED |
| US7122839B2 (en) * | 2004-10-29 | 2006-10-17 | Philips Lumileds Lighting Company, Llc | Semiconductor light emitting devices with graded composition light emitting layers |
| CN100392881C (en) * | 2005-06-23 | 2008-06-04 | 华南师范大学 | GaN-based LED extension sheet and its preparation method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108258090A (en) * | 2018-01-19 | 2018-07-06 | 映瑞光电科技(上海)有限公司 | A kind of LED epitaxial structure and preparation method thereof |
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