CN103824917B - LED manufacturing method, LED and chip - Google Patents
LED manufacturing method, LED and chip Download PDFInfo
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- CN103824917B CN103824917B CN201410065734.8A CN201410065734A CN103824917B CN 103824917 B CN103824917 B CN 103824917B CN 201410065734 A CN201410065734 A CN 201410065734A CN 103824917 B CN103824917 B CN 103824917B
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- gallium nitride
- gallium
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- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 230000004888 barrier function Effects 0.000 claims abstract description 54
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 35
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 78
- 229910021529 ammonia Inorganic materials 0.000 claims description 39
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 34
- 150000001875 compounds Chemical class 0.000 claims description 30
- 238000002360 preparation method Methods 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 17
- 229910052738 indium Inorganic materials 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 239000004411 aluminium Substances 0.000 claims description 10
- -1 alkyl compound Chemical class 0.000 claims description 3
- 238000002347 injection Methods 0.000 abstract description 7
- 239000007924 injection Substances 0.000 abstract description 7
- 238000003780 insertion Methods 0.000 abstract description 6
- 230000037431 insertion Effects 0.000 abstract description 6
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 222
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 12
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- 230000004087 circulation Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention provides an LED manufacturing method, an LED and a chip. The LED manufacturing method comprises the steps that a buffer layer is grown on a substrate; a non-doped gallium nitride layer and an N-type gallium nitride layer are sequentially grown on the buffer layer; at least one quantum well structure is grown on the N-type gallium nitride layer; an electron barrier layer is grown on the quantum well structure which is grown lastly; at least one insertion layer is grown on the electron barrier layer, wherein the insertion layer is composed of a P-type gallium nitride layer and an indium aluminum gallium nitrogen layer, and the indium aluminum gallium nitrogen layer is grown on the P-type gallium nitride layer; the P-type gallium nitride layer is grown on the insertion layer which is grown lastly. The manufactured LED is provided with the insertion layer with high carrier mobility, holes can fully migrate and diffuse in the insertion layer, as a result, the injection efficiency of the holes can be improved, the working voltage is effectively lowered, the light-emitting efficiency of the LED is improved, the distribution uniformity of the holes in the P-type layer is improved, emitted light is more uniform, currents in the layer can fully diffuse, and the antistatic ability of a device is effectively improved.
Description
Technical field
The present invention relates to light emitting diode (light-emitting diode, abbreviation led) field, more particularly, to a kind of tool
There are the led preparation method of aluminium gallium nitrogen (inalgan) interposed layer, led and the chip of high carrier mobility.
Background technology
Iii-v race semi-conducting material has obtained widely in fields such as luminous lighting, solar cell and high power devices
Application, the semiconductor material with wide forbidden band as representative especially with gallium nitride (gan), after silicon (si) and GaAs (gaas)
Third generation semi-conducting material, receives the extensive concern of scientific research circle and industrial circle, and gan is that manufacture blue green light led is main
Material, start comprehensively to carry out in industrial circle.
At present, the preparation method of gallium nitride led is outer by only growing in foreign substrate such as sapphire or silicon substrate
Prolong layer to be prepared from, but be easily caused epitaxial layer in preparation process and produce dislocation, so can limit the injection in hole, work as hole
Injectability limited when, can lead to gallium nitride led luminous efficiency reduce, and due to hole exist in itself mobility low, expand
The shortcomings of scattered length is short so that hole migrates very low to the efficiency of Quantum well active district from p-type area, that is, expand in p-type area by hole
Exhibition is limited in one's ability, and the antistatic effect of traditional gallium nitride led so can be led to slightly lower, and it is left that Human Body Model can only reach 2000v
The right side, easily punctures in strong electrostatic environment, simultaneously as hole two-dimensional expansion ability is poor, leads to current transfer during led work
It is not equally distributed, it is possible to create a current channel, the higher problem of device operating voltages can be led to, therefore affect yet
Luminous efficiency.
Content of the invention
The present invention provides a kind of led preparation method, by being further introduced into interposed layer in existing led, inserts by this
Enter layer high carrier mobility solve prior art in because the injectability in hole limited, lead to led luminous efficiency low and because
Hole, in the poor defect of p-type area extended capability, improves the antistatic effect of prepared led.
Present invention also offers the led that above-mentioned led preparation method is made, by introducing, there is high carrier mobility insertion
Layer, effectively increases the antistatic effect of device.
Present invention also offers including the chip of above-mentioned led, chip operating voltage reduces, and luminosity increases.
In a first aspect, the present invention provides a kind of led preparation method, comprising:
Source metal is passed through on substrate and ammonia reaction generates cushion；
Gallium nitride (gan) layer and N-shaped gallium nitride (n-gan) layer of undoped are grown successively on described cushion；
Described n-gan layer grows at least one quantum well structure, wherein, described quantum well structure by quantum barrier layer and
Quantum well layer forms, and described quantum well layer is grown on described quantum barrier layer；
Electronic barrier layer is grown on the described quantum well structure ultimately producing；
Described electronic barrier layer grows at least one of which interposed layer, wherein, described interposed layer is by p-type gallium nitride (p-
Gan) layer and aluminium gallium nitrogen (inalgan) layer composition, described inalgan layer is grown on described p-gan layer；
P-gan layer is grown on the described interposed layer ultimately producing.
In one concrete scheme, the temperature of reaction environment is controlled to be 500-550 DEG C, pressure is 200-600mbar, is passed through gold
Genus source and ammonia, form the cushion that thickness is 10-100nm, in particular embodiments, described substrate is permissible on substrate
For any one in the typical substrate material such as sapphire, graphic sapphire, silicon, carborundum, zinc oxide, glass and copper, institute
State the alkylates that source metal is a race metal one or more, the such as alkylates of gallium, aluminum and indium etc., for example permissible
For one or more of triethyl-gallium, trimethyl gallium, trimethyl aluminium and trimethyl indium, described ammonia is used for providing nitrogen source, root
According to selected source metal, the corresponding cushion generating can be gan, inn, aln etc. or mixture.The described behaviour producing cushion
Work can be able to be for example metal organic chemical vapor deposition (metal-organic using consersion unit commonly used in the art
Chemical vapor deposition, referred to as: mocvd) equipment, molecular beam epitaxy (molecular beam epitaxy,
Referred to as: mbe) equipment, hydride gas-phase epitaxy (hydride vapor phase epitaxy, referred to as: hvpe) equipment etc., this
Invention is not particularly limited (being also applied in other steps of the present invention program).It is passed through source metal and ammonia in course of reaction
Time can set with specific reference to source metal and ammonia intake per minute, when source metal and ammonia intake per minute
When less, suitably increase source metal and ammonia is passed through the time, so that the thickness of the cushion ultimately generating is in 5-100nm model
In enclosing.
Embodiment of the present invention, cushion generates and completes, and controls 800～1100 DEG C of temperature, and pressure is 200-
600mbar, is passed through gallium source compound and nh3, the gan of the undoped that thickness is 500～2000nm is formed on described cushion
Layer, wherein, gallium source compound can be triethyl-gallium or trimethyl gallium, then, controls temperature to be 1000～1100 DEG C, pressure is
200-600mbar, maintains and is passed through gallium source compound and nh3, and mixing p-type impurity, the doping content of described p-type impurity is
1x1017～5x1019cm-3, the n-gan layer that thickness is 1000～3000nm is formed on the gan layer of described undoped.This process
In, due to suitable temperature and pressure environment, cushion can be decomposed and is polymerized, and can spread in substrate surface and migrate, shape
Become to have equally distributed nucleus structure (available " nucleus island " describes), the gallium source compound being now passed through and nh3 then make buffering
Growing up and merge in the nucleus island of layer, generates the gan layer of undoped.
Doping is common knowledge and means in this area, p-type impurity for prepare mix in led conductive electricity can be provided
Son, thus improving a class impurity of conductive characteristic, the p-type impurity being typically incorporating can be silicon or silane.
According to embodiment of the present invention, after completing undoped gan layer and the setting of n-gan layer, can be according to following step
Suddenly carry out the growth of quantum well structure, step 1: control temperature to be 800～900 DEG C, pressure is 200-600mbar, is passed through gallium source
Compound and ammonia, grow gan quantum barrier layer on described n-gan layer.Described gan quantum is grown on described n-gan layer build
During layer, p-type impurity can be mixed and form n-gan quantum barrier layer it is also possible to not mix p-type impurity, form the gan quantum of undoped
Barrier layer.Wherein, in the present invention, no matter which kind of quantum barrier layer, the thickness of quantum barrier layer is all 5-25nm, quantum in the present invention
Barrier layer is not limited to simply gan quantum barrier layer, can also be algan quantum barrier layer or ingan quantum barrier layer；Step 2: control temperature
For 700～800 DEG C, pressure is 200-600mbar, is passed through gallium source compound, indium source compound and ammonia, wherein indium source compound
Can be triethylindium, trimethyl indium, on described gan quantum barrier layer, growing gallium nitride indium (ingan) quantum well layer, described
Ingan quantum well layer is the ingan quantum well layer of undoped, wherein, in the present invention, no matter which kind of quantum well layer, SQW
The thickness of layer is all 1-5nm, and in described ingan quantum well layer composition, based on stoichiometry, the molar content of indium (in) is a, and
0 < a < 1, i.e. in ingan quantum well layer composition, the molar content of in represents the molar percentage of in unit mole ingan.Institute
State quantum barrier layer and described quantum well layer forms the quantum well structure that a thickness is 6-30nm, it should be noted that quantum is built
The thickness of layer traditionally represents with base width, the thickness of quantum well layer is traditionally represented with trap width, a quantum well structure
Thickness custom periodic thickness represents, periodic thickness is added by trap width builds width.In the present invention, the quantity of described quantum well structure
Can be 1-50,1 described quantum well structure be obtained by above-mentioned steps 1 and step 2, when the quantity of described quantum well structure
During for 2, then step 3: be repeated once described step 1 and step 2 is obtained the 2nd quantum well structure, the institute generating in step 2
State one quantum well structure of regrowth on quantum well layer, if multiple quantum well structure, then repeat to walk according to the quantity of SQW
Rapid 1 and step 2, when described quantum well structure is at least 2, form the structure of gan/ingan MQW.
In embodiment of the present invention, after completing the generation of quantum well structure, temperature is controlled to be 800～900 DEG C, pressure is
200-600mbar, is passed through gallium source compound and ammonia, on the described quantum well layer of the described quantum well structure ultimately producing again
One layer of described gan layer of growth, i.e. when described quantum well structure is multi-quantum pit structure, in the quantum well structure ultimately producing
Quantum well layer on grow one layer of gan layer, impurity can be mixed in this gan layer and can not also mix impurity, specifically can join
See the described gan layer generating in step 1；Then temperature is controlled to be 800-1000 DEG C, pressure is 200-600mbar, is passed through gallium source
Compound, aluminum source compound, indium source compound and ammonia, wherein, aluminum source compound can be triethyl aluminum, trimethyl aluminium,
One layer of inalgan electronic barrier layer of continued growth on the described gan layer finally growing, described inalgan electronic barrier layer thickness
For 10-100nm, in described inalgan electronic barrier layer composition, the molar content of in is m, and the molar content of aluminum (al) is n, gallium
(ga) molar content is 1-m-n, wherein, 0 < m < 1,0 < n < 1.
In embodiment of the present invention, can be by step a and the life of step b on grown inalgan electronic barrier layer
Become at least one of which interposed layer, step a: control temperature be 900-1100 DEG C, pressure be 200-600mbar, be passed through gallium source compound,
N-type impurity and ammonia, grow described p-gan layer on described inalgan electronic barrier layer, in the present invention, n-type impurity and n
Unlike type is miscellaneous: n-type impurity for prepare in led mix hole can be provided, thus improving a class impurity of conductive characteristic,
General n-type impurity can be magnesium, and the doping content of n-type impurity is 1 × 1018cm-3～5 × 1020cm-3, described p-gan thickness degree
For 10-200nm；Then execution step b: control the temperature of reaction environment to be 900-1100 DEG C, pressure is 200-600mbar, leads to
Enter gallium source compound, aluminum source compound, indium source compound, n-type impurity and ammonia, inalgan is grown on described p-gan layer
Layer, described inalgan thickness degree is 1-5nm, and the doping content of the n-type impurity of described inalgan layer is 1 × 1018cm-3～5 ×
1020cm-3, in described inalgan layer composition, the molar content of in is m, and the molar content of al is n, and the molar content of ga is 1-m-
N, wherein, 0 < m < 1,0 < n < 1, described p-gan layer and described inalgan layer form described interposed layer.
Specific embodiments of the present invention, can generate monolayer p-gan/inalgan interposed layer by step a and step b,
Can also be multilamellar, the number of plies scope of described interposed layer is 1-20 layer, when described interposed layer is 2 layers, then execution step c: weight
Multiple step a and step b, when described interposed layer is multilamellar, are repeated in step a and step b, shape according to the number of plies of interposed layer
Become { p-gan/inalgan } superlattice structure.
In such scheme, finally, temperature control is 900-1100 DEG C, and pressure is 200-600mbar, is passed through gallium source chemical combination
Thing, n-type impurity and ammonia, on the described inalgan layer ultimately producing, growth a layer thickness is the p-gan layer of 10-200nm,
That is: when described interposed layer is monolayer, then cover one layer of p-gan layer on the inalgan layer of described interposed layer, when described interposed layer
During for multilamellar, then one layer of p-gan layer, n-type impurity in described p-gan layer are covered on the described inalgan layer ultimately producing
Doping content is 1 × 1018cm-3～5 × 1020cm-3.
In the described p-gan/inalgan interposed layer that the present invention provides, inalgan layer is to have high carrier mobility layer,
Hole can fully migrate in this layer and spread, and form good hole-conductive layer, and have high carrier mobility layer energy
Enough improve the injection efficiency in hole, hole injection efficiency improves and effectively can reduce running voltage, has high carrier mobility
Layer can also improve the distributing homogeneity in p-type layer for the hole, so that luminous more uniform, and traditional p-type layer is easily formed
Current channel, limits the raising of luminous efficiency, and the presence of this high carrier mobility layer can solve this problem well,
In addition there is high carrier mobility layer allow current to enough in this layer of diffusion fully, the antistatic energy of device can be effectively improved
Power.
Except there being special instruction, in the present invention, when forming doped layer (such as n-gan layer, p-gan layer), doping content table
Show per cubic centimeter in the foreign atom number that contains；Implement to prepare led using this area in each growth course of the present invention
Conventional various kinds of equipment provides reative cell, and such as mocvd equipment, mbe equipment and hvpe equipment etc., wherein mocvd equipment are profit
With metal organic chemical vapor deposition technology, metallo-organic compound is sunk in substrate enterprising circulation of qi promoting phase in pyrolysis mode
Amass thus preparing the equipment of led, mbe equipment is the equipment preparing led using molecular beam epitaxy technique, and hvpe equipment is to utilize hydrogen
Compound vapor phase epitaxy technique prepares the equipment of led, in specific implementation process, can be according to practical situation and it needs to be determined that corresponding
Equipment.
The present invention also provides a kind of led, and it prepares according to any of the above-described method.
The present invention further provides a kind of chip, comprising: at least one above-mentioned led.
The present invention provides a kind of improved led preparation method, and the led of preparation has high carrier mobility interposed layer, empty
Cave can fully migrate in this layer and spread, therefore, it is possible to improve the injection efficiency in hole, thus effectively reducing running voltage,
Led luminous efficiency strengthens, and improves hole in the distributing homogeneity of p-type layer so that luminous more uniform, and electric current is in this layer
Can spread fully, effectively increase the antistatic effect of device.
Brief description
The structural representation of the led that Fig. 1 provides for the embodiment of the present invention one；
The structural representation of the led that Fig. 2 provides for the embodiment of the present invention two.
Specific embodiment
Purpose, technical scheme and advantage for making the embodiment of the present invention are clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described it is clear that described embodiment is
The a part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment being obtained under the premise of not making creative work, broadly falls into the scope of protection of the invention.
Embodiment one
In the present embodiment, in the led being prepared from by following led preparation methoies, interposed layer is monolayer interposed layer, amount
Sub- well structure is multi-quantum pit structure, and each layer generating in preparation process may refer to Fig. 1, and Fig. 1 is the embodiment of the present invention one
The structural representation of the led providing, the consersion unit selected in the present embodiment is mocvd, and the substrate of selection is silicon substrate.
1st, control mocvd reaction chamber temperature be 520 DEG C, pressure be 600mbar, be passed through trimethyl gallium (150ml/min) and
Nh3(60l/min), set growth time as 3 minutes (time that is passed through of each material is growth time in the present embodiment), in silicon
React on substrate (si) 101, form the gan cushion 102 that thickness is 25nm.
2nd, temperature is controlled to be 1050 DEG C, pressure is 200mbar, is passed through trimethyl gallium (280ml/min) and ammonia (65l/
Min), set growth time as 30 minutes, growth a layer thickness is the gan layer of the undoped of 1500nm on gan cushion 102
103.
3rd, temperature maintains 1050 DEG C, and pressure maintains 200mbar, is passed through trimethyl gallium (300ml/min) and ammonia
(65l/min), set growth time as 40 minutes, and mix silane, growth a layer thickness is the n-gan layer 104, n- of 1500nm
In gan layer 104, the doping content of silane is 1 × 1019cm-3；
4th, reaction chamber temperature is controlled to be 840 DEG C, pressure is 300mbar, is passed through triethyl-gallium (360ml/min) and ammonia
(40l/min), mix si impurity, si doping content is 1 × 1018cm-3, set growth time as 2 points 30 seconds, in n-gan layer
The gan quantum barrier layer 105 of one layer of doping of growth on 104, the thickness of gan quantum barrier layer 105 is 12nm.
5th, reaction chamber temperature is controlled to be 760 DEG C, pressure is 300mbar, is passed through triethyl-gallium (120ml/min), trimethyl
Indium (400ml/min) and ammonia (40l/min), set growth time as 1 point 30 seconds, on above-mentioned gan quantum barrier layer 105 grow
The ingan quantum well layer 106 of one layer of undoped, the thickness of ingan quantum well layer 106 is 3nm, in ingan quantum well layer 106
Molar content be about 10%.Gan quantum barrier layer 105 and ingan quantum well layer 106 form the quantum well structure that thickness is 15nm
x.
6th, repeat the 4th step and 8 circulations of the 5th step, form the multi-quantum pit structure y comprising 9 gan/ingan SQWs.
7th, reaction chamber temperature is controlled to be 840 DEG C, pressure is 300mbar, is passed through triethyl-gallium (360ml/min) and ammonia
(40l/min), set growth time as 1 minute, in the ingan quantum well layer of the 9th gan/ingan quantum well structure generating
The gan layer 107 of one layer of undoped is grown on 106.
8th, temperature is controlled to be 900 DEG C, pressure is 200mbar, is passed through trimethyl gallium (120ml/min), trimethyl aluminium
(60ml/min), trimethyl indium (60ml/min) and ammonia (20l/min), sets growth time 2 minutes, in the gan of undoped
One layer of inalgan electronic barrier layer 108 is grown on layer 107, in inalgan electronic barrier layer 108, the molar content of al is 15%,
In molar content is the thickness of 1%, inalgan electronic barrier layer 108 is 15nm.
9th, grow p-type gan on the basis of inalgan electronic barrier layer, control temperature to be 980 DEG C, pressure is
200mbar, is passed through trimethyl gallium (120ml/min), two luxuriant magnesium (400ml/min) and ammonia (65l/min), sets growth time
For 8min, p-gan layer 109 is grown on inalgan electronic barrier layer 108, the thickness of p-gan layer 109 is 80nm, the doping of mg
Concentration is 2.3 × 1020cm-3.
10th, temperature is controlled to be reduced to 900 DEG C, pressure is 200mbar, is passed through triethyl-gallium (340ml/min), trimethyl aluminium
(20ml/min), trimethyl indium (200ml/min), two luxuriant magnesium (50ml/min) and ammonia (20l/min), set growth time as
1 minute, inalgan layer 1010 is grown on p-gan layer 109, in inalgan layer 1010, the molar content of in is rubbing of 10%, al
Your content is the doping content of 15%, mg is 2 × 1019cm-3, the thickness of inalgan layer 1010 is about 3nm, p-gan layer 109 He
Inalgan layer 1010 forms monolayer high carrier mobility interposed layer m.
11st, repeat the 9th step, i.e. one layer of p-gan layer 109 of regrowth on inalgan layer 1010, this monolayer high carrier
The led preparation of mobility interposed layer completes.
The led that embodiment one is prepared from is fabricated to 350 μm of chips of 350 μ m, is passed through the electric current of 20ma, records work
Voltage is 2.95v, and luminosity is 32mw.
As a comparison, it is fabricated to 350 μm of chips of 350 μ m using obtaining led according to existing preparation method, be passed through 20ma
Electric current, record running voltage and be about 3.1v, luminosity is about 29mw.
The led preparation method that the present embodiment provides, the led of preparation has high carrier mobility interposed layer, hole here
Layer can fully migrate and spread, and form good hole-conductive layer, therefore, it is possible to improve the injection efficiency in hole, when hole note
Enter when efficiency improves and can effectively reduce running voltage, high carrier mobility interposed layer can improve hole in p-type layer simultaneously
Distributing homogeneity so that luminous more uniform, and traditional p-type layer easily forms current channel, limits carrying of luminous efficiency
Height, there is a problem of of this high carrier mobility layer can solve luminous efficiency, well additionally, electric current moves in high carrier
Can spread in shifting rate interposed layer fully, effectively increase the antistatic effect of device.
Embodiment two
In the present embodiment, in the led being prepared from by following led preparation methoies, interposed layer is multilamellar interposed layer, that is,
Interposed layer is superlattices inserting structure, and each layer generating in preparation process may refer to Fig. 2, and Fig. 1 provides for the embodiment of the present invention two
Led structural representation, the consersion unit selected in the present embodiment is mocvd, and the substrate of selection is silicon substrate.
1st, control mocvd reaction chamber temperature be 520 DEG C, pressure be 600mbar, be passed through trimethyl gallium (150ml/min) and
Nh3(60l/min), set growth time as 3 minutes (time that is passed through of each material is growth time in the present embodiment), in silicon
React on substrate (si) 201, form the gan cushion 202 that thickness is 25nm.
2nd, control temperature to be 1050 DEG C, be passed through trimethyl gallium (280ml/min) and ammonia (65l/min), when setting growth
Between be 30 minutes, pressure keep 200mbar, gan cushion 202 grow a layer thickness be 1500nm undoped gan layer
203.
3rd, temperature maintains 1050 DEG C, and pressure maintains 200mbar, is passed through trimethyl gallium (300ml/min) and ammonia
(65l/min), set growth time as 40 minutes, and mix silane, growth a layer thickness is the n-gan layer 204, n- of 1500nm
In gan layer 204, the doping content of silane is 1 × 1019cm-3.
4th, temperature is controlled to be 840 DEG C, pressure is 300mbar, is passed through triethyl-gallium (360ml/min) and ammonia (40l/
Min), mix si impurity, si doping content is 1 × 1018cm-3, set growth time as 2 points 30 seconds, raw on n-gan layer 204
The gan quantum barrier layer 205 of long one layer of doping, the thickness of gan quantum barrier layer 205 is 12nm.
5th, temperature is controlled to be 760 DEG C, pressure maintains 300mbar, is passed through triethyl-gallium (120ml/min), trimethyl indium
(400ml/min) and ammonia (40l/min), sets growth time as 1 point 30 seconds, growth one on above-mentioned gan quantum barrier layer 205
The ingan quantum well layer 206 of layer undoped, the thickness of ingan quantum well layer 206 is 3nm, in ingan quantum well layer 206
Molar content is about 10%.Gan quantum barrier layer 205 and ingan quantum well layer 206 form the SQW knot that a thickness is 15nm
Structure x.
6th, repeat the 4th step and 8 circulations of the 5th step, form the multi-quantum pit structure y comprising 9 gan/ingan SQWs.
7th, reaction chamber temperature is controlled to be 840 DEG C, pressure is 300mbar, is passed through triethyl-gallium (360ml/min) and ammonia
(40l/min), set growth time as 1 minute, in the ingan quantum well layer of the 9th gan/ingan quantum well structure generating
The gan layer 207 of one layer of undoped is grown on 206.
8th, temperature is controlled to be 900 DEG C, pressure is 200mbar, is passed through trimethyl gallium (120ml/min), trimethyl aluminium
(60ml/min), trimethyl indium (60ml/min) and ammonia (20l/min), sets growth time 2 minutes, in the gan of undoped
One layer of inalgan electronic barrier layer 208 is grown, in inalgan electronic barrier layer 208, the molar content of al is 15% on layer 207,
The molar content of in is the thickness of 1%, inalgan electronic barrier layer 208 is 15nm.
9th, grow p-type gan on the basis of inalgan electronic barrier layer, temperature control is 980 DEG C, pressure is
200mbar, is passed through trimethyl gallium (60ml/min), two luxuriant magnesium (200ml/min) and ammonia (65l/min), sets growth time
For 4min, p-gan layer 209 is grown on inalgan electronic barrier layer 208, the thickness of p-gan layer 209 is 20nm, the doping of mg
Concentration is 2.3 × 1020cm-3.
10th, temperature control is 900 DEG C, pressure is 200mbar, is passed through triethyl-gallium (340ml/min), trimethyl aluminium
(20ml/min), trimethyl indium (200ml/min), two luxuriant magnesium (50ml/min) and ammonia (20l/min), set growth time as
1 minute, inalgan layer 2010 is grown on p-gan layer 209, in inalgan layer 2010, the molar content of in is rubbing of 10%, al
Your content is the doping content of 15%, mg is 2 × 1019cm-3, the thickness of inalgan layer 2010 is about 3nm, p-gan layer 209 He
Inalgan layer 2010 forms monolayer high carrier mobility interposed layer m.
11st, repeat 9-10 and walk 8 circulations, form the superlattices high carrier mobility comprising 9 layers of gan/inalgan and insert
Enter Rotating fields n.
12nd, continue to repeat the 9th step, one layer of regrowth on the inalgan layer 2010 of the 9th layer of gan/inalgan interposed layer
P-gan layer 209, this superlattices high carrier mobility interposed layer led structure completes.
It is fabricated to 350 μm of chips of 350 μ m by implementing two led being prepared from, is passed through the electric current of 20ma, record work electricity
Press as 2.90v, luminosity is 35mw.
As a comparison, 350 μm of chips of 350 μ m are fabricated to using the led that existing preparation method obtains, are passed through 20ma's
Electric current, recording running voltage is 3.1v, and luminosity is 29mw.
The led preparation method that the present embodiment provides, the led of preparation has high carrier mobility interposed layer, hole here
Layer can fully migrate and spread, and form good hole-conductive layer, therefore, it is possible to improve the injection efficiency in hole, when hole note
Enter when efficiency improves and can effectively reduce running voltage, high carrier mobility interposed layer can improve hole in p-type layer simultaneously
Distributing homogeneity so that luminous more uniform, and traditional p-type layer easily forms current channel, limits carrying of luminous efficiency
Height, there is a problem of of this high carrier mobility layer can solve luminous efficiency, well additionally, electric current moves in high carrier
Can spread in shifting rate interposed layer fully, effectively increase the antistatic effect of device.
Finally it is noted that various embodiments above, only in order to technical scheme to be described, is not intended to limit；To the greatest extent
Pipe has been described in detail to the present invention with reference to foregoing embodiments, it will be understood by those within the art that: its according to
So the technical scheme described in foregoing embodiments can be modified, or wherein some or all of technical characteristic is entered
Row equivalent；And these modifications or replacement, do not make the essence of appropriate technical solution depart from various embodiments of the present invention technology
The scope of scheme.
Claims (9)
1. a kind of led preparation method is it is characterised in that include:
Source metal is passed through on substrate and ammonia reaction generates cushion；
Gallium nitride layer and the n-type gallium nitride layer of undoped are grown successively on described cushion；
At least one quantum well structure is grown on described n-type gallium nitride layer, wherein, described quantum well structure by quantum barrier layer and
Quantum well layer forms, and described quantum well layer is grown on described quantum barrier layer；
Electronic barrier layer is grown on the described quantum well structure generating；
Described electronic barrier layer grows at least one of which interposed layer, described at least one of which interposed layer is by aluminium gallium nitrogen layer and p-type
Gallium nitride layer forms, and so that aluminium gallium nitrogen layer is grown on described p-type gallium nitride layer；
P-type gallium nitride layer is grown on the described interposed layer generating；
Described growth at least one of which interposed layer on described electronic barrier layer, comprising:
Step a, control temperature 900-1100 DEG C, pressure is 200-600mbar, is passed through gallium source compound, n-type impurity and ammonia,
Described p-type gallium nitride layer is grown on described electronic barrier layer；
, at 900-1100 DEG C, pressure is 200-600mbar, is passed through gallium source compound, aluminum source compound, indium for step b, control temperature
Source compound, n-type impurity and ammonia, grow described aluminium gallium nitrogen layer on described p-type gallium nitride layer；
Step c, number of plies repeat step a according to the interposed layer determining and b, the number of plies of described interposed layer is 1-20 layer.
2. led preparation method according to claim 1 is it is characterised in that described pass through source metal and ammonia on substrate
Reaction generates cushion, comprising:
Control temperature 500-550 DEG C of reaction environment, pressure is 200-600mbar, is passed through source metal and ammonia, in described substrate
Upper formed thickness be 5-100nm cushion, wherein, described source metal be a race metal one kind of alkyl compound or
Multiple.
3. led preparation method according to claim 1 and 2 is it is characterised in that described grow on described cushion successively
The gallium nitride layer of undoped and n-type gallium nitride layer, comprising:
Control 800～1100 DEG C of the temperature of reaction environment, pressure is 200-600mbar, is passed through gallium source compound and nh3, described
The gallium nitride layer of the undoped that thickness is 500～2000nm is formed on cushion；
Control 1000～1100 DEG C of temperature, pressure is 200-600mbar, maintains and is passed through gallium source compound and nh3, and it is miscellaneous to mix N-shaped
Matter, the doping content of described p-type impurity is 1x1017～5x1019cm-3, forming thickness on the gallium nitride layer of described undoped is
The n-type gallium nitride layer of 1000～3000nm.
4. led preparation method according to claim 1 is it is characterised in that described grow in described n-type gallium nitride layer
A few quantum well structure, comprising:
Step 1,800～900 DEG C of temperature of control, pressure is 200-600mbar, is passed through gallium source compound and ammonia, in described N-shaped
Growing gallium nitride quantum barrier layer on gallium nitride layer, and the thickness of this gallium nitride quantum barrier layer is 5-25nm；
Step 2, adjust the temperature to 700～800 DEG C, pressure is 200-600mbar, be passed through gallium source compound, indium source compound and
Ammonia, growing gallium nitride indium quantum well layer on described gallium nitride quantum barrier layer, based on described InGaN quantum wells layer composition
Stoichiometric relationship, the wherein molar content of indium is a, and 0 < a < 1, described InGaN quantum wells thickness degree is 1-5nm, institute
State gallium nitride quantum barrier layer and described InGaN quantum wells layer forms the quantum well structure that a thickness is 6-30nm；
Step 3, the quantity repeat the above steps 1 according to the described quantum well structure determining and step 2, described quantum well structure
Quantity is 1-50.
5. the led preparation method according to claim 1 or 4 it is characterised in that described generate described quantum well structure
Upper growth electronic barrier layer, comprising:
Control 800～900 DEG C of temperature, pressure is 200-600mbar, is passed through gallium source compound and ammonia, in the institute ultimately producing
State one layer of gallium nitride layer of regrowth on the described quantum well layer of quantum well structure；Then
Control temperature 800-1000 DEG C, pressure is 200-600mbar, is passed through gallium source compound, aluminum source compound, indium source compound
And ammonia, make one layer of aluminium gallium nitrogen electronic barrier layer of continued growth on described gallium nitride layer, described aluminium gallium nitrogen electronic barrier layer
Thickness is 10-100nm, and in described aluminium gallium nitrogen electronic barrier layer composition, the molar content of indium is m, and the molar content of aluminum is n, gallium
Molar content be 1-m-n, wherein, 0 < m < 1,0 < n < 1.
6. led preparation method according to claim 1 it is characterised in that
The p-type gallium nitride layer thickness forming interposed layer is 10-200nm, and the doping content of wherein n-type impurity is 1 × 1018cm-3
～5 × 1020cm-3.
7. led preparation method according to claim 1 it is characterised in that
The aluminium gallium nitrogen thickness degree of interposed layer is 1-5nm, and wherein the doping content of n-type impurity is 1 × 1018cm-3～5 × 1020cm-3, and in described aluminium gallium nitrogen layer composition, the molar content of indium is m, the molar content of aluminum is n, and the molar content of gallium is 1-m-n,
Wherein, 0 < m < 1,0 < n < 1.
8. the led of the led preparation method preparation described in a kind of any one according to claim 1～7.
9. a kind of chip is it is characterised in that include the led described at least one claim 8.
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| CN105762248B (en) * | 2016-05-16 | 2018-05-08 | 安徽三安光电有限公司 | A kind of light emitting diode and preparation method thereof |
| CN106784179B (en) * | 2016-12-06 | 2019-05-14 | 圆融光电科技股份有限公司 | A kind of LED preparation method, LED and chip |
| CN108735864B (en) * | 2018-05-28 | 2019-08-23 | 华灿光电（浙江）有限公司 | A kind of preparation method of LED epitaxial slice |
| CN110635007B (en) * | 2019-09-12 | 2024-09-27 | 佛山市国星半导体技术有限公司 | Antistatic epitaxial structure and preparation method thereof |
| CN111081836A (en) * | 2020-01-21 | 2020-04-28 | 福建兆元光电有限公司 | Light emitting diode and method for manufacturing the same |
| CN115347097B (en) * | 2022-10-18 | 2023-03-14 | 江西兆驰半导体有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6995403B2 (en) * | 2003-09-03 | 2006-02-07 | United Epitaxy Company, Ltd. | Light emitting device |
| CN102544285A (en) * | 2012-01-16 | 2012-07-04 | 北京大学 | Nitride light-emitting device for improving light-emitting efficiency by electron barrier layer |
| CN102969417A (en) * | 2012-11-01 | 2013-03-13 | 扬州中科半导体照明有限公司 | Green nitride light-emitting diode (LED) epitaxial wafer and growth method thereof |
| CN103050592A (en) * | 2013-01-06 | 2013-04-17 | 湘能华磊光电股份有限公司 | LED (Light Emitting Diode) epitaxial structure with P (Positive) type superlattice and preparation method thereof |
-
2014
- 2014-02-25 CN CN201410065734.8A patent/CN103824917B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6995403B2 (en) * | 2003-09-03 | 2006-02-07 | United Epitaxy Company, Ltd. | Light emitting device |
| CN102544285A (en) * | 2012-01-16 | 2012-07-04 | 北京大学 | Nitride light-emitting device for improving light-emitting efficiency by electron barrier layer |
| CN102969417A (en) * | 2012-11-01 | 2013-03-13 | 扬州中科半导体照明有限公司 | Green nitride light-emitting diode (LED) epitaxial wafer and growth method thereof |
| CN103050592A (en) * | 2013-01-06 | 2013-04-17 | 湘能华磊光电股份有限公司 | LED (Light Emitting Diode) epitaxial structure with P (Positive) type superlattice and preparation method thereof |
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