CN111081836A - Light emitting diode and method for manufacturing the same - Google Patents

Light emitting diode and method for manufacturing the same Download PDF

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Publication number
CN111081836A
CN111081836A CN202010070420.2A CN202010070420A CN111081836A CN 111081836 A CN111081836 A CN 111081836A CN 202010070420 A CN202010070420 A CN 202010070420A CN 111081836 A CN111081836 A CN 111081836A
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China
Prior art keywords
layer
type semiconductor
hole injection
semiconductor layer
electron blocking
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Pending
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CN202010070420.2A
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Chinese (zh)
Inventor
吴永胜
张帆
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Fujian Prima Optoelectronics Co Ltd
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Fujian Prima Optoelectronics Co Ltd
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Priority to CN202010070420.2A priority Critical patent/CN111081836A/en
Publication of CN111081836A publication Critical patent/CN111081836A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure

Abstract

The present invention relates to a light emitting diode and a method for manufacturing the same, the light emitting diode including: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on a partial region of the n-type semiconductor layer; an electron blocking layer formed on the active layer for preventing electrons from overflowing; a hole injection layer formed on the electron blocking layer; a p-type semiconductor layer formed on the hole injection layer; the n-type electrode is electrically connected with the n-type semiconductor layer; and a p-type electrode electrically connected with the p-type semiconductor layer; the hole injection layer has a smaller band gap energy closer to the p-type semiconductor layer. The light emitting diode and the manufacturing method thereof can improve the hole injection efficiency and increase the luminous efficiency.

Description

Light emitting diode and method for manufacturing the same
Technical Field
The invention belongs to the field of semiconductor light-emitting elements, and particularly relates to a light-emitting diode and a manufacturing method thereof.
Background
A semiconductor Light Emitting Device (Light Emitting Device) is an element that converts electrical energy into optical energy. That is, when a forward voltage is applied to the light emitting element, holes in the P-type semiconductor layer recombine with electrons in the N-type semiconductor layer, and electrons having energy equivalent to band gap are releasedLight of a corresponding wavelength. Gallium nitride semiconductor (Al)xInyGa1-x-yN; 0. ltoreq. x.ltoreq.1, 0. ltoreq. y.ltoreq.1, 0. ltoreq. x + y. ltoreq.1) and the ratio of aluminum, indium and gallium are different, and light of various wavelengths can be emitted, and thus the material has attracted attention as a material for a light-emitting element.
Light-emitting elements based on gallium nitride semiconductor thin films have low power consumption, semi-permanent life, high response speed, and stability and environmental compatibility, compared with conventional light sources such as fluorescent lamps and incandescent lamps.
However, in a gallium nitride-based light emitting diode using a Multiple Quantum Well structure (MQW), carriers injected into an active layer cannot be uniformly dispersed and contained in all Quantum Well layers. That is, only the minority quantum well layer adjacent to the hole injection layer mainly contributes to light emission, consuming carriers. Therefore, when the amount of current injected into the active layer is large, a leakage current phenomenon may occur due to electrons that are not confined in the active layer but move to the positive electrode and are not recombined with holes.
To prevent such leakage current, an electron blocking layer (electron blocking layer) is formed between the p-type gallium nitride-based semiconductor layer and the multiple quantum well structure. The electron blocking layer generally uses AlGaN having a large band gap energy, and the large band gap prevents electrons from moving to the positive electrode, which in turn prevents injection of holes into the active layer.
Disclosure of Invention
The invention aims to provide a light-emitting diode capable of improving hole injection efficiency and increasing luminous efficiency and a manufacturing method thereof.
In order to achieve the purpose, the invention adopts the technical scheme that: a light emitting diode comprising: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on a partial region of the n-type semiconductor layer; an electron blocking layer formed on the active layer for preventing electrons from overflowing; a hole injection layer formed on the electron blocking layer; a p-type semiconductor layer formed on the hole injection layer; the n-type electrode is electrically connected with the n-type semiconductor layer; and a p-type electrode electrically connected with the p-type semiconductor layer; the hole injection layer has a smaller band gap energy closer to the p-type semiconductor layer.
Further, the electron blocking layer comprises p-AlGaN and the hole injection layer comprises InAlGaN.
Further, in the hole injection layer, the closer to the p-type semiconductor layer, the higher the indium content.
Further, the hole injection layer contains InxAlyAnd GaN, wherein the value range of x is 0.1-10, and the value range of y is 0.15-0.3.
The invention also provides a manufacturing method of the light-emitting diode, which comprises the following steps:
1) forming an n-type semiconductor layer on a substrate;
2) forming an active layer on the n-type semiconductor layer;
3) forming an electron blocking layer on the active layer;
4) forming a hole injection layer on the electron blocking layer;
5) forming a p-type semiconductor layer on the hole injection layer;
6) etching partial regions of the p-type semiconductor layer, the hole injection layer, the electron blocking layer, and the active layer to expose partial regions of the n-type semiconductor layer;
7) forming an n-type electrode electrically connected with the n-type semiconductor layer;
8) forming a p-type electrode electrically connected with the p-type semiconductor layer;
in the step 4, in the process of forming the hole injection layer, the composition ratio of the hole injection layer is adjusted so that the hole injection layer has a smaller band gap energy closer to the p-type semiconductor layer.
Further, the electron blocking layer comprises p-AlGaN and the hole injection layer comprises InAlGaN.
Further, in the step 4, in the process of forming the hole injection layer on the electron blocking layer, the hole injection layer is stacked such that the indium content of the hole injection layer gradually increases.
Further, the step 4 includes laminating In on the electron blocking layerxAlyAnd the GaN layer, wherein the value range of x is 0.1-10, and the value range of y is 0.15-0.3.
Compared with the prior art, the invention has the following beneficial effects: a light emitting diode and a method for manufacturing the same are provided, in which a hole injection layer having a higher indium content is formed on an electron blocking layer closer to a p-type semiconductor layer, and the band gap energy is changed with a linear gradient by a linear change in the indium composition ratio, thereby reducing the high band gap energy of the electron blocking layer, improving the hole injection efficiency into an active layer, increasing the light emitting efficiency, and having high practicability and a wide application prospect.
Drawings
Fig. 1 is a cross-sectional view of a light emitting diode according to an embodiment of the present invention.
Fig. 2-8 are cross-sectional views of an led at various stages in the fabrication process according to an embodiment of the present invention.
Fig. 9 is a band diagram of a light emitting diode according to an embodiment of the present invention.
In the figure, 10, a substrate; 20. a light emitting structure; 21. an n-type semiconductor layer; 23. an active layer; 25. an electron blocking layer; 27. a hole injection layer; 29. a p-type semiconductor layer; 31. an n-type electrode; 33. a p-type electrode; 41. an active layer; 43. an electron blocking layer; 45. a hole injection layer.
Detailed Description
While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof have been shown by way of example in the drawings and are herein described in detail. However, it is not intended to limit the invention to the particular form disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.
When it is stated that an element such as a layer, region or substrate is present "on" another constituent element, this may be understood as being present directly on the other element or intervening elements may also be present therebetween.
Although the terms first, second, etc. may be used herein to describe various elements, components, regions, layers and/or sections, it should be understood that such elements, components, regions, layers and/or sections should not be limited by such terms.
Preferred embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. The same components in the following drawings are denoted by the same reference numerals, and redundant description thereof will be omitted.
Fig. 1 is a cross-sectional view of a light emitting diode according to an embodiment of the present invention.
Referring to fig. 1, a light emitting diode according to an embodiment of the present invention includes: the light-emitting structure comprises a substrate (10), a light-emitting structure (20) formed on the substrate, an n-type electrode (31) and a p-type electrode (33). The light-emitting structure (20) comprises an n-type semiconductor layer (21), an active layer (23) formed on a partial region of the n-type semiconductor layer (21), an electron blocking layer (25) formed on the active layer (23), a hole injection layer (27) formed on the electron blocking layer (25), and a p-type semiconductor layer (29) formed on the hole injection layer (27).
The substrate (10) can be used without limitation as long as it is a known substance that can be used as a gallium nitride-based light emitting diode substrate. Generally, SiC, Si, GaN, ZnO, GaAs, GaP, LiAl capable of growing gallium nitride semiconductor material may be used2O3Any one of BN, AlN and the like, but not limited thereto. The substrate (10) may have a concave-convex pattern for growing a high-quality gallium nitride light-emitting structure (20), reflecting light formed by the active layer (23), and improving optical power.
A gallium nitride-based light-emitting structure (20) is formed on the substrate (10). The light-emitting structure (20) contains AlxInyGa1-x-yN (0. ltoreq. x.ltoreq.1, 0. ltoreq. y.ltoreq.1, 0. ltoreq. x + y. ltoreq.1) has a structure in which an N-type semiconductor layer (21), an active layer (23), an electron blocking layer (25), a hole injection layer (27), and a p-type semiconductor layer (29) different in atomic composition ratio and dopant are stacked in this order.
The n-type semiconductor layer (21) may be a gallium nitride-based semiconductor implanted with an n-type dopant. The n-type dopant may be silicon (Si), germanium (Ge), or tin (Sn).
The active layer (23) formed on a partial region of the n-type semiconductor layer (21) may have a single quantum well structure or a multiple quantum well structure. The active layer (23) of the multiple quantum well structure may have a structure in which a gallium nitride-based semiconductor layer having a large band gap and a gallium nitride-based semiconductor layer having a small band gap are alternately stacked.
The electron blocking layer (25) formed on the active layer (23) has a band gap energy greater than that of the active layer (23), and prevents electrons from being excessively injected from the n-type semiconductor layer (21) into the p-type semiconductor layer (29). For example, the electron blocking layer (25) may be Al doped with a p-type dopantxGa1-xN(0<x is less than or equal to 1). The electron blocking layer (25) may be a bulk layer of the same composition or have a multilayer structure with different Al compositions.
The hole injection layer (27) formed on the electron blocking layer (25) has a band gap energy that is the largest in a region in contact with the electron blocking layer (25) and decreases as it comes into contact with the p-type semiconductor layer (29). The hole injection layer (27) may contain InxAlyThe content of indium atoms can be increased as the GaN is adjacent to the p-type semiconductor layer (29). According to an embodiment of the present invention, the x may vary linearly in a range of 0.1 to 10 inclusive, and the y may have a value of 0.15 to 0.3 inclusive. When the value of y representing the content of aluminum atom is less than 0.15, the band gap energy is too small to block electrons. In contrast, when the value of y exceeds 0.3, the band gap energy is too large, preventing injection of holes into the active layer, resulting in a decrease in luminous efficiency.
A p-type semiconductor layer (29) is formed on the hole injection layer (27). The p-type semiconductor layer (29) may be a gallium nitride-based semiconductor doped with a p-type dopant. The p-type dopant may be magnesium (Mg), zinc (Zn), or cadmium (Cd).
An n-type electrode (31) is formed in a partial region of the n-type semiconductor layer (21) exposed from the active layer (23), the electron blocking layer (25), the hole injection layer (27), and the p-type semiconductor layer (29), and a p-type electrode (33) is formed in a partial region on the p-type semiconductor layer (29). The n-type electrode (31) and the p-type electrode (33) may be conductive materials. For example, Si, Au, Pt, Mg, Zn, Hf, Ta, W, Ti, Ag, Cr, Mo, Nb, Al, Ni, Cu or their alloys may be used, but not limited thereto.
Between the p-type electrode (33) and the p-type semiconductor layer (29), a transparent conductive layer (not shown in the figure) may be selectively formed. The transparent conductive layer may be made of a conductive material having high light transmittance, and may be a very thin metal film or a metal oxide layer.
In addition, in order to improve the crystallinity of the light emitting structure (20), a buffer layer (not shown) and an undoped semiconductor layer (not shown) may be optionally formed on the substrate (10) according to an embodiment of the present invention. The buffer layer may be a GaN layer or an AlN layer grown at a low temperature. The undoped semiconductor layer may be formed in a thickness sufficient to reduce defects caused by a difference in lattice constant and a difference in thermal expansion coefficient between the substrate (10) and the gallium nitride-based semiconductor.
Fig. 2-8 are cross-sectional views of an led at various stages in the fabrication process according to an embodiment of the present invention.
Referring to fig. 2, first, an n-type semiconductor layer (21) is formed on a substrate (10). As described in detail in the description of fig. 1, a buffer layer and an undoped semiconductor layer may be selectively formed on the substrate (10). The n-type semiconductor layer (21) may be formed according to a Chemical Vapor Deposition (CVD) method, or may be formed according to a known deposition method such as Physical vapor deposition (Physical vapor deposition), sputtering (sputtering), hydrogen vapor deposition (HVPE), or Atomic layer deposition (Atomic layer deposition).
Referring to fig. 3, an active layer (23) is formed on the n-type semiconductor layer (21). The active layer (23) may have a single quantum well structure or a multiple quantum well structure. The active layer (23) of the multiple quantum well structure can be formed by alternately stacking a gallium nitride semiconductor layer having a large band gap and a gallium nitride semiconductor layer having a small band gap.
Referring to fig. 4, an electron blocking layer (25) is formed on the active layer (23). The electron blocking layer (23) may be p-Al in which the aluminum atom content is increased to 0.15 or morexGa1-xN(0<x is less than or equal to 1). The electron blocking layer (25) may be formed of a bulk layer having the same composition, or a structure in which a plurality of layers having different compositions of Al are stacked.
Referring to fig. 5, a hole injection layer (27) is formed on the electron blocking layer (25). The hole injection layer (27) contains InxAlyAnd GaN, wherein x can be a value ranging from 0.1 to 10, and y can be a value ranging from 0.15 to 0.3. The hole injection layer (27) is formed to have a higher indium atom content as it adjoins the p-type semiconductor layer (29). Thus, different raw material composition ratios can be employed in the deposition step, adjusted to have a continuously increasing indium atom content.
Referring to fig. 6, a p-type semiconductor layer (29) is formed on the hole injection layer (27).
Referring to fig. 7, the p-type semiconductor layer (29), the hole injection layer (27), the electron blocking layer (25), and the active layer (23) are partially etched to expose a partial region of the n-type semiconductor layer (21).
Referring to fig. 8, an n-type electrode (31) electrically connected to the exposed n-type semiconductor layer (21) and a p-type electrode (33) electrically connected to the p-type semiconductor layer (29) are formed. The n-type electrode (31) and the p-type electrode (33) may be formed by thermal deposition (thermal deposition), electron beam deposition (E-beam deposition), or sputtering, but are not limited thereto.
Between the p-type electrode (33) and the p-type semiconductor layer (29), a transparent conductive layer (not shown in the figure) may be selectively formed. The transparent conductive layer may be made of a conductive material having high light transmittance, and may be a thin metal film or a metal oxide layer.
Fig. 9 is a band diagram of a light emitting diode according to an embodiment of the present invention.
Referring to fig. 9, the active layer (41) is formed by alternately stacking layers having different band gap energies from each other to form a barrier layer and a quantum well layer, and the electron blocking layer (43) has a band gap energy larger than that of the active layer region. The hole injection layer (45) has a band gap energy that decreases linearly as one proceeds from the electron blocking layer (43) to the p-type semiconductor layer. As described above, the indium atom content of the hole injection layer (45) can be gradually increased, and the re-routing of the band gap energy can be reduced. As the band gap energy linearly decreases, holes can be efficiently injected into the active layer (41) despite the high band gap energy of the electron blocking layer (43). Therefore, the light emitting efficiency of the light emitting diode can be increased.
The above are preferred embodiments of the present invention, and all changes made according to the technical scheme of the present invention that produce functional effects do not exceed the scope of the technical scheme of the present invention belong to the protection scope of the present invention.

Claims (8)

1. A light emitting diode, comprising:
a substrate;
an n-type semiconductor layer formed on the substrate;
an active layer formed on a partial region of the n-type semiconductor layer;
an electron blocking layer formed on the active layer for preventing electrons from overflowing;
a hole injection layer formed on the electron blocking layer;
a p-type semiconductor layer formed on the hole injection layer;
the n-type electrode is electrically connected with the n-type semiconductor layer; and
the p-type electrode is electrically connected with the p-type semiconductor layer;
the hole injection layer has a smaller band gap energy closer to the p-type semiconductor layer.
2. The led of claim 1, wherein said electron blocking layer comprises p-AlGaN and said hole injection layer comprises InAlGaN.
3. The light-emitting diode according to claim 2, wherein the hole injection layer has a higher indium content closer to the p-type semiconductor layer.
4. The light-emitting diode according to claim 2, wherein the hole injection layer contains InxAlyAnd GaN, wherein the value range of x is 0.1-10, and the value range of y is 0.15-0.3.
5. A method for manufacturing a Light Emitting Diode (LED) is characterized by comprising the following steps:
1) forming an n-type semiconductor layer on a substrate;
2) forming an active layer on the n-type semiconductor layer;
3) forming an electron blocking layer on the active layer;
4) forming a hole injection layer on the electron blocking layer;
5) forming a p-type semiconductor layer on the hole injection layer;
6) etching partial regions of the p-type semiconductor layer, the hole injection layer, the electron blocking layer, and the active layer to expose partial regions of the n-type semiconductor layer;
7) forming an n-type electrode electrically connected with the n-type semiconductor layer;
8) forming a p-type electrode electrically connected with the p-type semiconductor layer;
in the step 4, in the process of forming the hole injection layer, the composition ratio of the hole injection layer is adjusted so that the hole injection layer has a smaller band gap energy closer to the p-type semiconductor layer.
6. The method of claim 5, wherein the electron blocking layer comprises p-AlGaN and the hole injection layer comprises InAlGaN.
7. The method for manufacturing a light-emitting diode according to claim 6, wherein in the step 4, in the step of forming the hole injection layer on the electron blocking layer, the hole injection layer is laminated so that the indium content of the hole injection layer increases gradually.
8. The method for manufacturing a light-emitting diode according to claim 6, wherein the step 4 includes laminating In on the electron blocking layerxAlyAnd the GaN layer, wherein the value range of x is 0.1-10, and the value range of y is 0.15-0.3.
CN202010070420.2A 2020-01-21 2020-01-21 Light emitting diode and method for manufacturing the same Pending CN111081836A (en)

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Cited By (1)

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CN116504900A (en) * 2023-06-26 2023-07-28 江西兆驰半导体有限公司 LED epitaxial wafer, preparation method thereof and LED

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116504900A (en) * 2023-06-26 2023-07-28 江西兆驰半导体有限公司 LED epitaxial wafer, preparation method thereof and LED

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Application publication date: 20200428