KR101203140B1 - METHOD FOR FABRICATING A ZnO BASED LIGHT EMITTING DEVICE AND A ZnO BASED LIGHT EMITTING DEVICE FABRICATED BY THE METHOD - Google Patents

METHOD FOR FABRICATING A ZnO BASED LIGHT EMITTING DEVICE AND A ZnO BASED LIGHT EMITTING DEVICE FABRICATED BY THE METHOD Download PDF

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KR101203140B1
KR101203140B1 KR20060043038A KR20060043038A KR101203140B1 KR 101203140 B1 KR101203140 B1 KR 101203140B1 KR 20060043038 A KR20060043038 A KR 20060043038A KR 20060043038 A KR20060043038 A KR 20060043038A KR 101203140 B1 KR101203140 B1 KR 101203140B1
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zinc oxide
semiconductor layer
type
layer
emitting device
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KR20060043038A
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KR20070109696A (en
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한창석
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서울옵토디바이스주식회사
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Abstract

The invention Al x In y Ga 1 -x- y N (0≤x, y, x + y≤1) and to form a compound semiconductor is a p-type semiconductor layer, a zinc oxide on the p-type semiconductor layer on the substrate It provides a method of manufacturing a zinc oxide light-emitting device comprising the step of forming a (ZnO) -based active layer, and forming an n-type zinc oxide semiconductor layer on the zinc oxide-based active layer.

According to the present invention, it is difficult to form a p-type compound due to the material properties of zinc oxide, and the n-type semiconductor layer is formed of zinc oxide according to the characteristics of the n-type compound, and Al x In y Ga 1 having material properties similar to zinc oxide. -x- y N (0≤x, y, x + y≤1) implements a pn-junction structure for a light-emitting device by forming a p-type compound semiconductor layer of semiconductor material to be used for the material properties of the zinc oxide to the light emitting element It became.

Zinc Oxide, ZnO, Light-Emitting Element, AlInGaN, GaN, AlN, InN

Description

A method for manufacturing a zinc oxide light emitting device, and a zinc oxide light emitting device manufactured by the same, and a zinc oxide light emitting device manufactured by the same.

1 is a process flowchart illustrating a manufacturing process of a ZnO-based light emitting device according to an embodiment of the present invention.

2 to 4 are cross-sectional views of the manufacturing process of FIG. 1.

<Description of the symbols for the main parts of the drawings>

100 substrate 200 GaN buffer layer

300: undoped GaN semiconductor layer 400: p-type GaN semiconductor layer

500: ZnO-based active layer 600: n-type ZnO semiconductor layer

700: upper electrode 800: lower electrode

The present invention relates to the production of zinc oxide (ZnO) -based light-emitting device, and in particular, it is difficult to form a p-type compound due to the material properties of zinc oxide (ZnO) and n-type compound according to the characteristics of the n-type compound zinc oxide (ZnO) n Material characteristics of zinc oxide (ZnO) in a light emitting device by forming a p-type semiconductor layer by forming a type semiconductor layer, and a p-type semiconductor layer of a group III-V compound semiconductor material having a similar material property to ZnO The present invention relates to a method for producing a zinc oxide light emitting device and a zinc oxide light emitting device manufactured thereby.

In general, a light emitting device includes a light emitting diode having a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between these semiconductor layers. Light is generated by the recombination of electrons and holes in the active layer and emitted to the outside.

Light emitting diodes have developed into a group III-V compound semiconductor. Group III-V compound semiconductors provide superior performance in applications such as high speed and high temperature electronics, light emitters and photo detectors.

In particular, nitride compound semiconductors such as gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and alloys thereof have been used in III-V group compound semiconductors.

Among nitride compound semiconductors, gallium nitride (GaN) has a bandgap required for a light emitting diode emitting a blue laser and a spectrum having a blue wavelength. Therefore, much research has been conducted on the use of the nitride compound semiconductor.

Zinc oxide (ZnO) is a representative compound semiconductor material of the II-VI series to replace gallium nitride (GaN). The material properties of zinc oxide (ZnO) are almost the same as those of gallium nitride (GaN). Furthermore, the exciton binding energy, which is a very important factor as a light emitting device, is about 60 meV at room temperature and is about 25 meV. Since it appears much higher than gallium (GaN), it is a material having infinite possibilities as a light emitting device.

For this reason, many studies have been made on light emitting devices using zinc oxide (ZnO).

However, despite the material properties of zinc oxide (ZnO) with such infinite possibilities, it has not yet achieved such a result as a light emitting device. This is because p-type zinc oxide (p-ZnO) is very difficult to form due to the inherent physical properties of zinc oxide (ZnO), making it difficult to show characteristics as a light emitting device.

The technical problem to be achieved by the present invention is improved performance by the characteristics of zinc oxide by applying zinc oxide to a light emitting device having a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer interposed between these semiconductor layers. It is to be able to manufacture a light emitting device having a.

According to an aspect of the present invention for achieving the technical problem, the step of forming a p-type semiconductor layer of Al x In y Ga 1-xy N (0≤x, y, x + y≤1) compound semiconductor on the substrate And forming a zinc oxide (ZnO) -based active layer on the p-type semiconductor layer, and forming an n-type zinc oxide semiconductor layer on the zinc oxide-based active layer. do.

Etching a portion of the n-type zinc oxide semiconductor layer, a zinc oxide-based active layer, and a p-type semiconductor layer to expose a portion of the p-type semiconductor layer, and to the n-type zinc oxide semiconductor layer and the exposed p-type semiconductor layer Forming an electrode may be further included.

The method may further include forming an Al x Ga 1 - x N (0 ≦ x ≦ 1) based buffer layer between the substrate and the p-type semiconductor layer.

Preferably the step of forming the buffer layer and the p-type semiconductor layer between the Al x In y Ga 1 -x- y N (0≤x, y, x + y≤1) based buffer layer may be further included.

Preferably, the forming of the zinc oxide-based active layer may include a binary to quaternary compound semiconductor layer represented by general formula Zn x Mg y Cd 1-x- y O (0 ≦ x, y, x + y ≦ 1). The quantum well layer and the barrier layer may be repeatedly stacked to form a multilayer film.

According to still another aspect of the present invention, the substrate and the substrate on the Al x In y Ga 1 -x- y N (0≤x, y, x + y≤1) compound semiconductor is a p-type semiconductor layer and the p A zinc oxide light emitting device comprising a zinc oxide (ZnO) based active layer formed on a semiconductor semiconductor layer and an n type zinc oxide semiconductor layer formed on the zinc oxide based active layer is provided.

The zinc oxide light emitting device is exposed to the n-type zinc oxide semiconductor layer in a state in which a portion of the p-type semiconductor layer is exposed by etching portions of the n-type zinc oxide semiconductor layer, the zinc oxide-based active layer, and the p-type semiconductor layer. It may further include an electrode formed on the p-type semiconductor layer.

The zinc oxide light emitting device may further include an (Al x In y Ga 1-xy N (0 ≦ x, y, x + y ≦ 1) based buffer layer between the substrate and the p-type semiconductor layer.

The zinc oxide light emitting device may further include an (Al x In y Ga 1-xy N (0 ≦ x, y, x + y ≦ 1) based undoped semiconductor layer between the buffer layer and the p-type semiconductor layer). have.

The ZnO-based active layer has the general formula Zn x Mg y Cd 1 -x- y O (0≤x, y, x + y≤1) quantum well layer of the semiconductor layer 2-to 4 won compound represented by the barrier layer It is a multilayer film formed by laminating | stacking repeatedly. It is characterized by the above-mentioned.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention.

Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. In the drawings, lengths, thicknesses, and the like of layers and regions may be exaggerated for convenience. Like numbers refer to like elements throughout.

1 is a process flow chart for explaining the manufacturing process of the ZnO-based light emitting device according to an embodiment of the present invention, Figures 2 to 4 are process cross-sectional view according to the manufacturing process. Here, the manufacturing process of the light emitting element using the semiconductor layer which consists of nitride and zinc oxide among light emitting elements is demonstrated.

1 and 2, a substrate 100 is prepared in a process chamber (not shown) for forming a nitride and zinc oxide (ZnO) semiconductor layer (S1). The substrate 100 has a lattice constant similar to that of the nitride semiconductor layer to be formed thereon. The substrate 100 may be sapphire (Al 2 O 3 ), spinel, silicon carbide (SiC).

Thereafter, a GaN buffer layer 200 is formed on the substrate 100 (S2).

The GaN buffer layer 200 is used to mitigate the lattice mismatch between the semiconductor layers to be formed thereon and the substrate 100. The GaN buffer layer 200 may be grown to a thickness of 20 nm to 50 nm at a low temperature, for example, at a temperature of about 400 to about 700 ° C. and a pressure of 50 Torr to 700 Torr.

Thereafter, an undoped GaN semiconductor layer 300 is formed on the GaN buffer layer 200 (S3).

The undoped GaN semiconductor layer 300 is interposed between the GaN buffer layer 200 and the p-type GaN semiconductor layer 400 and is made of undoped GaN.

The undoped GaN semiconductor layer 300 is intended to effectively form a high-quality p-type GaN semiconductor layer 400 made of a GaN-based material thereon.

The GaN buffer layer 200 and the undoped GaN semiconductor layer 300 may include metal organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), or molecular beam growth (molecular beam). epitaxy, MBE) and the like.

The p-type GaN semiconductor layer 400, the ZnO-based active layer 500, and the n-type ZnO semiconductor layer 600 are sequentially formed on the undoped GaN semiconductor layer 300 (S4).

The p-type GaN semiconductor layer 400 may be formed by doping magnesium (Mg) or zinc (Zn), and may include a p-type cladding layer.

The ZnO-based active layer 500 is a region where electrons and holes are recombined, and includes ZnMgO or ZnCdO. The emission wavelength emitted from the light emitting diode is determined according to the type of material constituting the ZnO-based active layer 500.

That is, ZnO-based active layer 500 is magnesium because it can be controlled with the addition of Zn 2 + ions with a radius of magnesium (Mg) or cadmium (Cd), etc. Similar to zinc oxide (ZnO) to the band gap 2.8eV to 4eV The desired emission wavelength can be determined by adjusting the mole fraction of (Mg) or cadmium (Cd).

That is, as the content of magnesium (Mg) increases, the band gap energy increases, and as the content of cadmium (Cd) increases, the band gap energy decreases. Accordingly, like GaN-based light emitting devices, light of various wavelengths may be generated from ultraviolet rays to infrared rays.

The ZnO-based active layer 500 may be a multilayer film in which a quantum well layer and a barrier layer are repeatedly formed. The barrier layer and the well layer may be binary to quaternary compound semiconductor layers represented by the general formula Zn x Mg y Cd 1-xy O (0 ≦ x, y, x + y ≦ 1).

Specifically, zinc oxide (ZnO) and zinc oxide (Zn 1 - x Mg x O (0 ≦ x ≦ 1) capable of adjusting a band gap by adding magnesium (Mg) or cadmium (Cd) to zinc oxide (ZnO) and zinc oxide (ZnO). ) Or zinc cadmium oxide (Zn 1 - x Cd x O (0 ≦ x ≦ 1)) may be alternately stacked to form a barrier layer and a well layer of the ZnO-based active layer 500.

To this end, dimethyl zinc [Zn (CH 3 ) 2 ], an organic metal containing zinc as a reaction precursor, and bis-cyclopentadienyl magnesium ((C 5 H 5 ) 2 , an organic metal containing magnesium) Mg) and oxygen (O 2 ) gas are used, and argon is used as a transport gas.

Argon, which transports diethylzinc and biscyclopentadienyl magnesium, through separate lines, and O 2 , are appropriately controlled and deposited alternately by organometallic chemical vapor deposition without a metal catalyst.

Preferred pressures and temperatures in the reactor for deposition are 10 −5 mmHg to 760 mmHg and 400 to 700 ° C., respectively. After growing zinc oxide (ZnO), zinc magnesium / zinc oxide is grown by appropriately changing the flow of precursors, diethyl zinc and biscyclopentadienyl magnesium, from the exhaust line to the reactor. The magnesium content of zinc magnesium oxide is 12 at.% (Atomic percent).

The n-type ZnO semiconductor layer 600 is formed on the ZnO-based active layer 500 by organometallic chemical vapor deposition without using a metal catalyst.

Specifically, the n-type ZnO semiconductor layer 600 injects a zinc-containing organic metal and an oxygen-containing gas or an oxygen-containing organic substance into separate reactors into a reactor in which a ZnO-based active layer 500 is formed, respectively, from 0.1 to It is formed on the ZnO-based active layer 500 by organometallic chemical vapor deposition which chemically reacts the precursors of the reactants under a pressure of 10 torr and a reaction condition of 400 to 700 ° C.

Zinc-containing organic metals used for the deposition of the n-type ZnO semiconductor layer 600 include dimethyl zinc [Zn (CH 3 ) 2 ], diethyl zinc [ZnC 2 H 5 ) 2 ], zinc acetate [Zn (OOCCH 3 ) 2 · H 2 O], zinc acetate anhydride [Zn (OOCCH 3) 2] , zinc acetyl acetonate [Zn (C 5 H 7 O 2) 2] a and the like for example, oxygen-containing gas is O 2, O 3 , NO 2 , water vapor, CO 2 and the like can be cited, for example, C 4 H 8 O as an oxygen-containing organic material.

1 and 3, a portion of the n-type ZnO semiconductor layer 600, the ZnO-based active layer 500, and the p-type GaN semiconductor layer 400 are partially formed in the state where the n-type ZnO semiconductor layer 600 is formed. By etching, a portion of the p-type GaN semiconductor layer 400 is exposed (S5).

1 and 4, upper and lower electrodes 700 and 800 are formed in the n-type ZnO semiconductor layer 600 and the exposed p-type GaN semiconductor layer 400, respectively (S6).

The upper electrode 700 is formed by sequentially depositing titanium (Ti) (10 nm) and gold (Au) (50 nm) using, for example, heat or electron beam evaporation.

The lower electrode 800 is formed by sequentially depositing platinum (Pt) (10 nm) and gold (Au) (50 nm) on the p-type GaN semiconductor layer 400 using heat or electron beam evaporation.

In the manufacture of the upper and lower electrodes 700 and 800, the acceleration voltage and emission current of the electron beam for metal evaporation are 4 to 20 mA and 40 to 400 mA, respectively, and the pressure of the reactor is about 10 -5 mmHg when the metal is deposited. The temperature in the reactor was kept at room temperature.

The present invention is not limited to the above described embodiments, and various modifications and changes can be made by those skilled in the art, which are included in the spirit and scope of the present invention as defined in the appended claims.

For example, an embodiment of the present invention describes the use of gallium nitride (GaN) in a III-V group compound semiconductor as a p-type semiconductor layer corresponding to an n-type ZnO semiconductor layer for manufacturing a light emitting device using zinc oxide. It was.

However, in addition to gallium nitride (GaN), various nitride compound semiconductors such as aluminum nitride (AlN), indium nitride (InN), and alloys thereof may be used as p-type semiconductor layers for manufacturing light emitting devices using zinc oxide. Al x in y Ga 1 -x- y N may be used (0≤x, y, x + y≤1 ). in addition may be used a Group III-V compound semiconductor of GaP and GaAs.

In addition, group II-VI compound semiconductors such as ZnSe, CdSe, CdS and ZnS, semiconductors such as SrCu 2 O 2 , SiC, and Si, and the like can be used and these can be easily purchased commercially.

In addition, in an embodiment of the present invention, the use of a gallium nitride (GaN) buffer layer and an undoped layer for manufacturing a light emitting device using zinc oxide has been described.

However, in addition to gallium nitride (GaN), various nitride compound semiconductors such as aluminum nitride (AlN), indium nitride (InN), and alloys thereof may be used as buffer layers and undoped layers for manufacturing light emitting devices using zinc oxide. (it may be the Al x In y Ga 1 -x- y N (0≤x, y, x + y≤1).

In addition, in one embodiment of the present invention, the zinc oxide was deposited by an organic chemical vapor deposition method using no metal catalyst, but in addition, it is possible by physical growth methods such as sputtering or pulsed laser deposition, and metals such as gold (Au) It is also possible by a vapor-phase transport process using a catalyst.

In an embodiment of the present invention, the n-type zinc oxide semiconductor layer, the zinc oxide-based active layer, and the p-type semiconductor layer are etched to expose a portion of the p-type semiconductor layer, and then a lower electrode is formed on the exposed p-type semiconductor layer. The zinc oxide light emitting device fabricated as described above has been described, but the vertical type of forming a lower electrode on the p-type semiconductor layer after separating the substrate without etching the n-type zinc oxide semiconductor layer, the zinc oxide-based active layer, and the p-type semiconductor layer. It is also applicable to a light emitting element.

According to the present invention, a p-GaN semiconductor layer doped with magnesium (Mg), a ZnO-based active layer, and an n-type ZnO semiconductor layer are formed in this order.

Due to the material properties of zinc oxide (ZnO), it is difficult to form a p-type compound, and according to the characteristics of n-type compound, an n-type semiconductor layer is formed of zinc oxide (ZnO), and GaN has a material property similar to that of zinc oxide (ZnO). By forming a p-type semiconductor layer, a pn junction structure for a light emitting device can be realized, thereby enabling the use of material properties of zinc oxide (ZnO) in the light emitting device.

In addition, the ZnO-based active layer alternately forms a layer doped with magnesium or cadmium in zinc oxide (ZnO) and zinc oxide (ZnO) to form a quantum well layer and a barrier layer repeatedly, thereby controlling the mole fraction of magnesium and cadmium. It can generate light of various wavelengths from to infrared.

In the pn junction structure spherical by the present invention, the n-type ZnO semiconductor layer is formed on the uppermost layer. Due to the characteristics of the n-type ZnO, the n-type ZnO formed on the uppermost layer of the GaN-based light emitting device may exhibit a high brightness light emitting device property by not only functioning as an electron injection layer but also by depositing pad metal without a separate conductive film.

Claims (10)

Forming a p-type semiconductor layer of Al x In y Ga 1 -x- y N (0 ≦ x, y, x + y ≦ 1) compound semiconductor material on the substrate, Forming a zinc oxide (ZnO) -based active layer on the p-type semiconductor layer; And forming an n-type zinc oxide semiconductor layer on the zinc oxide-based active layer. The method according to claim 1, Etching a portion of the n-type zinc oxide semiconductor layer, the zinc oxide-based active layer, and the p-type semiconductor layer to expose a portion of the p-type semiconductor layer; And forming an electrode in the n-type zinc oxide semiconductor layer and the exposed p-type semiconductor layer. The method according to claim 1, Of the zinc oxide based light-emitting device further comprising the step of forming the substrate and the p-type semiconductor layer between the Al x In y Ga 1 -x- y N (0≤x, y, x + y≤1) based buffer Manufacturing method. The method of claim 3, Oh oxidation further includes the step of forming the buffer layer and the p-type semiconductor layer between the Al x In y Ga 1 -x- y N (0≤x, y, x + y≤1) based conductive semiconductor layer is sentenced linked Method of manufacturing a light emitting device. The method of claim 1, wherein the forming of the zinc oxide based active layer, The multilayer film is formed by repeatedly stacking the quantum well layer and the barrier layer of the binary to quaternary compound semiconductor layer represented by the general formula Zn x Mg y Cd 1 -x- y O (0≤x, y, x + y≤1). A method of manufacturing a zinc oxide light emitting device, characterized in that to form a. A substrate; The substrate on Al x In y Ga 1 -x- y N (0≤x, y, x + y≤1) is a p-type compound semiconductor layer and the semiconductor material, A zinc oxide (ZnO) -based active layer formed on the p-type semiconductor layer, Zinc oxide light emitting device comprising an n-type zinc oxide semiconductor layer formed on the zinc oxide active layer. The method of claim 6, A portion of the n-type zinc oxide semiconductor layer, a zinc oxide-based active layer, and a p-type semiconductor layer is etched to be formed in the n-type zinc oxide semiconductor layer and the exposed p-type semiconductor layer in a state where a portion of the p-type semiconductor layer is exposed. Zinc oxide light-emitting device further comprising an electrode. The method of claim 6, Zinc oxide based light-emitting device further comprises between the substrate and the p-type semiconductor layer Al x In y Ga 1 -x- y N (0≤x, y, x + y≤1) based buffer layer. The method of claim 8, Zinc oxide based light-emitting device further comprises a buffer layer and the p-type semiconductor layer between the Al x In y Ga 1 -x- y N (0≤x, y, x + y≤1) type undoped conductive semiconductor layer. The method according to claim 6, wherein the zinc oxide active layer, A quantum well layer and a barrier layer of a binary to quaternary compound semiconductor layer represented by general formula Zn x Mg y Cd 1 -x- y O (0≤x, y, x + y≤1) are repeatedly stacked. Zinc oxide light emitting device, characterized in that the multilayer film.
KR20060043038A 2006-05-12 2006-05-12 METHOD FOR FABRICATING A ZnO BASED LIGHT EMITTING DEVICE AND A ZnO BASED LIGHT EMITTING DEVICE FABRICATED BY THE METHOD KR101203140B1 (en)

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