JP2001230447A - Manufacture method for iii nitride-based compound semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To relax the lattice mismatching between a substrate and an n-contact layer and to enhance the crystallinity of a III nitride-based compound semiconductor layer. SOLUTION: A first semiconductor layer which is composed of AlxGayIn1-x-yN (where 0<=x<=1, 0<=y<=1 and 0<=x+y<=1) is grown between the substrate and the n-contact layer by an MOCVD method at a growth temperature of 1000 to 1180 deg.C while its lattice contact is changed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a group III nitride compound semiconductor device. More specifically, the present invention relates to an improvement in a method for forming a buffer layer when a group III nitride compound semiconductor device is manufactured by metal organic chemical vapor deposition (MOCVD).

[0002]

Conventionally, taking as an example the case of a light-emitting element as a structure of a semiconductor device using the group III nitride compound semiconductor, on a sapphire substrate _{Al X Ga 1-X N (} 0 ≦ X
There is known a structure in which a buffer layer of ≦ 1) is provided, and an n-contact layer, a light-emitting layer, and the like are formed thereon. The buffer layer is provided for the purpose of improving the crystallinity of the light emitting layer and the like. As a method for growing a buffer layer, for example,
The -119196 discloses, are grown by a growth temperature of _{950 ℃ ~1150 ℃ Al X Ga 1} -X N (0 ≦ X ≦ 1) MOCVD method buffer layer. Further, according to subsequent studies, it has been found that by growing the buffer layer at a growth temperature of about 400 ° C., the crystallinity of the group III nitride-based compound semiconductor layer grown thereon is improved (Japanese Patent Application Laid-Open No. HEI 9-163572). No. 2-229476). On the other hand, JP-A-5
No. 29618 discloses a buffer layer having a composition gradient on a substrate (Ga _1-XY In _X Al _Y N (0 ≦ X ≦
1, 0 ≦ Y ≦ 1)) has been proposed.

[0003]

A further improvement in light emission output is required for a group III nitride compound semiconductor light emitting device. For that purpose, it is essential to improve the crystallinity of each group III nitride compound semiconductor layer such as an n-contact layer, an n-cladding layer, and a light-emitting layer. In view of such a problem, the present inventors have focused on a buffer layer serving as a base of a group III nitride-based compound semiconductor layer and studied a growth method thereof. As a result, it has been found that when a buffer layer is grown at a high temperature under a predetermined condition, the crystallinity of a group III nitride-based compound semiconductor layer grown thereon is improved (Japanese Patent Application No. 11-2).
22882, applicant reference number: 980341, agent reference number: P0129). According to the observations of the present inventors, the buffer layer grown at a higher temperature than in the past is in a single crystal state, and a group III nitride-based compound semiconductor layer is grown on the underlayer having good crystallinity. Therefore, it is considered that the crystallinity of the group III nitride compound semiconductor is improved.

[0004]

The present invention is based on the above findings.
New group III nitride compounds
Provided is a method for growing a base layer (buffer layer) of a semiconductor layer.
For the purpose, the group III nitride-based compound semiconductor layer
It is intended to further improve the crystallinity. Its structure
The results are as follows. That is, the MOCVD method is applied on the substrate.
At a growth temperature of 1000 ° C. to 1180 ° C._xGa _yI
n_1-xyN (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y
≦ 1), the lattice constant of the first semiconductor layer
And / or growing with continuously changing
Group III nitride-based compound semiconductor, characterized by containing
Device manufacturing method.

According to the manufacturing method of the present invention, a first semiconductor layer (base layer) having good crystallinity is formed, and a group III nitride compound semiconductor layer is grown on the base layer having good crystallinity. be able to. As a result, the crystallinity of the group III nitride compound semiconductor layer is improved. Further, since the first semiconductor layer (underlayer) is formed such that its lattice constant changes gradually, lattice mismatch between the substrate and the group III nitride compound semiconductor layer is effectively generated in the underlayer. To be relaxed.
In other words, a large difference in lattice constant between the substrate and the group III nitride-based compound semiconductor layer is gradually or continuously relaxed in the underlayer, that is, without a sudden change in the lattice constant. A nitride-based compound semiconductor layer can be grown. As a result, the crystallinity of the group III nitride compound semiconductor layer is further improved, and the characteristics of the semiconductor device are improved.

[0006]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Each component of the present invention will be described below. The material of the substrate is not particularly limited as long as it is suitable for the group III nitride compound semiconductor. sapphire,
Spinel, silicon, silicon carbide, zinc oxide, gallium phosphide, gallium arsenide, magnesium oxide, manganese oxide, and the like can be given as examples of the material of the substrate. In the present invention, it is preferable to grow a group III nitride compound semiconductor on the a-plane of the sapphire substrate.

A group III nitride-based compound semiconductor has a general formula of Al _X Ga _Y In _1-XY N (0 ≦ X ≦ 1, 0 ≦
Y ≦ 1, 0 ≦ X + Y ≦ 1), a so-called binary system of AlN, GaN and InN, Al _x Ga _1-x N, Al
including so-called ternary _x In _1-x N and _{Ga x In 1-x N (} 0 In the above ≦ x ≦ 1). Some of the Group III elements may be replaced with boron (B), thallium (Tl), etc. Some of the nitrogen (N) may also be replaced with phosphorus (P), arsenic (As), antimony (Sb), bismuth. (Bi) and the like. The group III nitride compound semiconductor may contain any dopant. As an n-type impurity,
Si, Ge, Se, Te, C and the like can be used.
Mg, Zn, Be, Ca, Sr, B as p-type impurities
a etc. can be used. It is difficult to make the group III nitride-based compound semiconductor a low-resistance p-type semiconductor only by doping with the p-type impurity. Exposure to irradiation, plasma irradiation or furnace heating is also possible.

[0008] On the _{substrate, Al x Ga y In 1-} x-y
A first semiconductor layer made of N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1) is formed. The first semiconductor layer is formed by a metalorganic compound vapor deposition method ("MOCVD" in this specification).
The law. " ). The growth of the first semiconductor layer is performed under a temperature condition of 1000C to 1180C.
By growing the first semiconductor layer under such temperature conditions, a semiconductor layer made of a single crystal is grown. Preferably, it is performed at 1050 ° C to 1180 ° C. More preferably, the temperature is 1110C to 1150C. Within the range of the above temperature conditions, the growth temperature can be changed with the growth of the first semiconductor layer. A group III nitride compound semiconductor layer having good crystallinity at a high temperature over the substrate is formed by MOCVD.
In order to form by the method, it is preferable that the following condition is further satisfied (see the above-mentioned Japanese Patent Application No. 11-222882). That is, it has a surface nitride layer thickness of 30 nm or less, and the first layer formed on the substrate has a thickness of 0.01 to 3.2 μm.
That. More preferably, the thickness of the surface nitrided layer is 1 to
30 nm, and the thickness of the first layer is 1.2 to 3.2 μm. On the other hand, the thickness of the surface nitrided layer is less than 1 nm,
The thickness of the layer may be 0.01 to 2.3 μm.
A nitride layer is formed on the surface of the substrate. When performing the MOCVD method, the substrate is heated under a flow of hydrogen gas or the like to clean the surface thereof, and then, while maintaining the temperature of the substrate, the hydrogen gas is used as a carrier gas and a group III nitride compound semiconductor is used. This nitride layer is formed by flowing a first gas (ammonia, hydrazine, organic amine, or the like) serving as a nitrogen material. In one aspect of the invention,
The thickness (depth) of the surface nitrided layer was 10 to 300 °. Surface nitrided layers with a thickness greater than 300 ° can be used, but this would require a long time to form the surface nitrided layer. For example, a mixed gas of hydrogen gas (10 liters / minute) and ammonia gas (3 liters / minute) is set to 119
When allowed to flow on a sapphire substrate heated to 0 ° C. for 30 minutes, a surface nitrided layer having a thickness of about 200 ° was formed.
The thickness of the surface nitrided layer can be controlled by adjusting the flow time of the mixed gas of the hydrogen gas and the ammonia gas. Furthermore, it is considered that the thickness of the surface nitrided layer can be controlled by adjusting the concentration of the ammonia gas and / or the substrate temperature. Further, the thickness of the surface nitrided layer is less than 10 °.
After the substrate surface cleaning is completed, first, a nitrogen material source gas such as ammonia gas is circulated. Then, after the circulation is stabilized, a group III metal element material gas such as TMA is immediately circulated. According to the experience of the present inventors, 30 seconds to 9 seconds after opening the valve for introducing ammonia gas.
After 0 seconds (usually less than 30 to 60 seconds), the flow of ammonia gas is stabilized. As a result, a surface nitrided layer having a thickness of less than 10 ° is formed. In this case, since only the ammonia gas is supplied to the substrate surface for a short time, the substrate surface is considered to be nitrided, but its thickness is difficult to measure. Here, the production step itself in which the group III metal element material gas is circulated immediately after the ammonia gas circulates stably is important.

The first semiconductor layer is grown such that its lattice constant changes stepwise or continuously from the substrate side. In other words, the first semiconductor layer is grown while changing its composition such that the lattice constant changes stepwise or continuously. Further, the first semiconductor layer can be grown by arbitrarily combining stepwise change and continuous change. In order to change the lattice constant of the first semiconductor layer stepwise or continuously, in the MOCVD method, the composition ratio of the source gas is changed stepwise or continuously as the first semiconductor layer is grown. Good. In the case where the first semiconductor layer is grown so that its lattice constant changes stepwise, a plurality of semiconductor layers having different compositions are stacked to form the first semiconductor layer. In this case, it is preferable that each layer constituting the first semiconductor layer has a thickness of 200 nm to 4000 nm. More preferably, the thickness of each layer is from 500 nm to 20 nm.
The range is set to 00 nm. Most preferably, each layer has a thickness of about 1000 nm. Needless to say, the thicknesses of the respective layers do not need to be the same, and layers having different thicknesses can be stacked to form the first semiconductor layer. In this case, it is preferable to change the thickness of each layer stepwise from the substrate side. When growing the uppermost layer of the first semiconductor layer, Si,
By doping impurities such as Ge, C, and Sn, the uppermost layer can be an n-contact layer.

The first semiconductor layer is formed on the first semiconductor layer.
The group II nitride-based compound semiconductor layer (hereinafter referred to as “second semiconductor layer”) has a lattice constant substantially equal to or close to the lattice constant of the second semiconductor layer. preferable. According to such a configuration, the second semiconductor layer is grown on the underlying layer that is more lattice-matched, and the crystallinity of the second semiconductor layer can be improved. Further, it is preferable that the substrate has a lattice constant substantially equal to or close to that of the substrate.

When sapphire is used as the substrate,
The composition of the surface of the first semiconductor layer in contact with the substrate is preferably AlN. The composition of sapphire is Al ₂ O ₃ , and it is considered that the surface is terminated with oxygen. Therefore, if the composition of the first semiconductor layer in contact with the substrate is AlN, the Al is compatible with oxygen atoms of the sapphire substrate. Then, by sequentially changing the ratio of Al atoms in the first semiconductor layer to be grown,
The crystal structure is not overpowered. Since hydrogen atoms are initially bonded to the surface oxygen atoms of the sapphire substrate, it is necessary to raise the temperature of the sapphire substrate to allow ammonia to flow to deprive the hydrogen atoms and expose the surface oxygen atoms. .

The thickness of the first semiconductor layer is preferably from 400 nm to 100 μm. If the thickness is less than 400 nm, the function as a strain buffer layer cannot be sufficiently exhibited, and if the thickness is more than 100 μm, it takes a long time to grow, which is not preferable in terms of manufacturing efficiency. More preferably, the thickness is from 1000 nm to 50 μm. In addition, several tens μm
When the sapphire substrate is formed thick, the sapphire substrate can be removed to function as a substrate for a conductive semiconductor element.

The second semiconductor layer is formed by a well-known molecular beam crystal growth method (M
(BE method), a halide vapor phase epitaxy method (HVPE method), a sputtering method, an ion plating method, an electron shower method, or the like.

[0014]

The configuration of the present invention will be described in more detail with reference to the following examples. (First Embodiment) FIG. 1 shows a light emitting diode 1 manufactured by the manufacturing method of the present invention. The specifications of each layer are as follows. Layer: Composition: Dopant (thickness) Translucent electrode 15 p Contact layer 14: p-GaN: Mg (0.3 μm) Light emitting layer 13: superlattice structure Quantum well layer: In _0.15 Ga _0.85 N (3 .5 nm) Barrier layer: GaN (3.5 nm) Number of repetitions of quantum well layer and barrier layer: 1 to 10 n contact layer 12: n-GaN: Si (4 μm) First semiconductor layer 11: Al _x Ga _1-x N (0 ≦ x ≦ 1) (10 μm) Substrate 10: Sapphire (300 μm)

As shown in FIG. 2, the first semiconductor layer is formed by laminating a plurality of layers whose composition changes stepwise from the substrate 10 toward the n-contact layer 12. That is, the composition of the first semiconductor layer is AlN on the surface in contact with the substrate 10 and is GaN on the surface in contact with the n-contact layer 12 as in the n-contact layer. In the present embodiment, the composition of the first semiconductor layer is changed in ten steps, but is not limited to the ten steps.
Further, the degree of change in the composition is not limited to that of the embodiment. In this embodiment, the thickness of each layer constituting the first semiconductor layer is 1000 nm, but the thickness is not limited to this, and the thickness can be changed for each layer.

The n contact layer 12 has a low electron concentration n ⁻ layer on the light emitting layer 13 side and a high electron concentration n ⁺ layer on the first semiconductor layer 11 side.
It can have a two-layer structure composed of layers. Light emitting layer 13
Is not limited to a superlattice structure. As a structure of the light-emitting element, a homostructure having a MIS junction, a PIN junction, or a pn junction, a single heterostructure, or a double heterostructure can be used. A quantum well structure (single quantum well structure or multiple quantum well structure) can be adopted as the light emitting layer. Light-emitting layer 13 and p-contact layer 14
Wide _{Al X Ga Y In 1-X} -Y N (0 ≦ band cap doped with acceptor magnesium or the like between the
X ≦ 1, 0 ≦ Y ≦ 1, X + Y ≦ 1) layer can be interposed. This is because electrons injected into the light emitting layer 13 are p
This is to prevent diffusion into the contact layer 14.
The p-contact layer 14 has a low hole concentration p ⁻ on the light-emitting layer 13 side.
A two-layer structure including a layer and a high hole concentration p ⁺ side on the p-electrode 16 side can be employed.

The light emitting diode 1 having the above structure is manufactured as follows. First, the sapphire substrate was removed from the reactor while flowing hydrogen gas into the reactor of the MOCVD apparatus.
Heat to 0 ° C. and maintain for 5 minutes. And the substrate 11
Is raised to 1130 ° C., and only ammonia gas is first introduced as a material gas for 15 minutes. Thereafter, the substrate temperature is reduced to 1
The first semiconductor layer is formed while maintaining the temperature at 130 ° C. The first semiconductor layer is formed using ammonia gas and trimethylgallium (TM) which is an alkyl compound gas of a group III element.
G), MOCVD using trimethyl aluminum (TMA) as a source gas. First, an AlN layer is formed by setting the supply amount of TMG to zero. Then, T
By gradually increasing the supply amount of MG,
A layer in which the composition ratio of Al and Ga changes stepwise from _0.9 Ga _0.1 N to GaN is formed. n contact layer 1
2, the light-emitting layer 13, and the p-contact layer 14 are formed by a conventional method (MO
(CVD method). That is, with ammonia gas
Group III element alkyl compound gas such as trimethylgallium (TMG), trimethylaluminum (TMA)
And trimethylindium (TMI) are supplied onto the substrate to cause a thermal decomposition reaction, thereby growing a desired crystal.

The translucent electrode 15 is a thin film containing gold.
The contact layer 14 is laminated so as to cover substantially the entire upper surface. The p-electrode 16 is also made of a material containing gold, and is formed on the translucent electrode 15 by vapor deposition. n electrode 17
Is formed by vapor deposition on the surface of the n-contact layer 12 exposed by etching.

(Second Embodiment) FIG. 3 is an enlarged view of a main part of a light emitting diode 2 according to another embodiment of the present invention. Note that the same members as those of the light emitting diode 1 of the first embodiment are denoted by the same reference numerals, and description thereof will be omitted. In the light emitting diode 2, the composition of the first semiconductor layer 21 changes continuously from AlN to GaN from the substrate 10 toward the n-contact layer 12. First semiconductor layer 21 whose composition changes continuously
Is formed by continuously changing the composition ratio of the source gas when performing the MOCVD method. Note that the thickness of the first semiconductor layer 21 is 50 μm.

(Third Embodiment) FIG. 4 is an enlarged view of a main part of a light emitting diode 3 according to another embodiment of the present invention. Note that the same members as those of the light emitting diode 1 of the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.

In the light emitting diode 3, the first semiconductor layer 31
Of AlN from the substrate 10 toward the n-contact layer.
ＡｌAl _0.1 Ga _0.72 In _0.18 N in nine steps. The composition of the n-contact layer 32 is Ga
_0.8 In _0.2 N (Si-doped). As described above, the light emitting diode 3 is configured by laminating layers whose composition changes stepwise from the first semiconductor layer 31 to the n-contact layer 32. The first semiconductor layer 31 and the n-contact layer 32 are formed continuously by changing the composition ratio of the source gas stepwise when performing the MOCVD method. The degree and number of changes in the composition of the first semiconductor layer 31 are not limited to those of the embodiment.

The element to which the present invention is applied is not limited to the above-mentioned light-emitting diode. In addition to optical elements such as light-receiving diodes, laser diodes, and solar cells, rectifiers, bipolar elements such as thyristors and transistors, and FETs
And the like, and electronic devices such as microwave devices. The present invention is also applicable to a laminate as an intermediate of these elements.

The present invention is not limited to the description of the above-described embodiments and examples. Various modifications are included in the present invention without departing from the scope of the claims and within the scope of those skilled in the art.

Hereinafter, the following matters will be disclosed. (10) The substrate is sapphire,
The method according to claim 1. (11) In the surface of the first semiconductor layer which is in contact with the substrate,
(10) wherein the composition is AlN.
The production method described in 1. (20) The first semiconductor layer has a thickness of 400 nm or more.
9. The method according to claim 1, wherein the thickness is 100 μm.
0) and the production method according to any one of (11). (21) The thickness of the first semiconductor layer is 1000 nm.
５０50 μm.
Construction method. (30) The growth temperature of the first semiconductor layer is 1050 ° C.
To 1180 ° C., characterized in that:
Any of (10), (11), (20), and (21)
The production method described in Crab. (31) The growth temperature of the first semiconductor layer is 1110 ° C.
-1150 ° C., characterized in that:
Any of (10), (11), (20), and (21)
The production method described in Crab. (40) Al on the substrate_xGa_yIn_1-xyN
(0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1)
The first semiconductor layer formed by stacking a plurality of single crystal layers is
Growing by a CVD method, wherein
The lattice constant of each layer of the crystal changes stepwise and / or continuously
Growing each of the layers such that
A method for manufacturing a group III nitride compound semiconductor device. (41) The lattice constant of the single crystal layer located on the uppermost surface
Is the group III nitride-based compound semiconductor layer formed thereon.
Characterized by being substantially the same as the lattice constant (4
The production method according to 0). (42) The lattice constant of each layer of the single crystal changes stepwise
Each layer is grown so that the thickness of each layer is 20
0 nm to 4000 nm (4
0) or the production method according to (41). (43) The thickness of each layer is 500 nm to 2000.
(42). The method according to (42), wherein
Law. (44) The thickness of each layer is about 1000 nm.
The production method according to (42), wherein (45) The thickness of each of the layers is different between the respective layers.
The method according to (42) or (43), wherein
Law. (46) The film thickness of each layer is changed stepwise.
Growing the first semiconductor layer on the substrate.
The production method according to (45). (50) The group III nitride compound semiconductor device emits light.
9. An element according to claim 1, wherein:
0), (11), (20), (21), (30), (3)
1) and the production according to any one of (40) to (46).
Method. (60) 1000 ° C.-1 by MOCVD on the substrate
At a growth temperature of 180 ° C., the lattice constant is stepped and / or
Al grown while changing continuously_xGa _yIn
_1-xyN (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦
Group III comprising a semiconductor layer consisting of 1)
A nitride-based compound semiconductor device. (61) A substrate and 1 on the substrate by MOCVD.
Step the lattice constant at a growth temperature between 000 ° C and 1180 ° C
Grown while changing the target and / or continuously_x
Ga_yIn _1-xyN (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0
≦ x + y ≦ 1), and the first semiconductor layer
Group III nitride compound semiconductors formed on semiconductor layers
III-nitride comprising: a second semiconductor layer comprising:
-Based compound semiconductor devices. (62) The first semiconductor layer is on the second semiconductor layer side
Where the lattice constant is substantially the same as the lattice constant of the second semiconductor layer.
The element according to (61), having a number. (63) The lattice constant of the first semiconductor layer changes stepwise.
Growing the first semiconductor layer such that
The thickness of each layer in the constant is 200 nm to 4000 nm.
The element according to any one of (60) to (62),
Child. (64) The thickness of each layer is 500 nm to 2000.
(63). The device according to (63), wherein (65) The thickness of each layer is about 1000 nm.
The element according to (63), wherein: (66) The thickness of each of the layers is different between the respective layers.
The device according to (63) or (64), wherein (67) The film thickness of each layer changes stepwise.
The device according to (66), wherein: (68) The substrate is sapphire,
(60) to (67). (69) On the surface of the first semiconductor layer which is in contact with the substrate
(68) wherein the composition is AlN.
An element according to claim 1. (70) The first semiconductor layer has a thickness of 400 nm to 400 nm.
(10)-(69)
An element according to any one of the above. (71) The thickness of the first semiconductor layer is 1000 nm.
７０50 μm.
Child. (72) A substrate, formed on the substrate, and formed of Al_xGa
_yIn_1-xyN (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x
+ Y ≦ 1) in which a plurality of single-crystal layers
Group III nitride compound semi-conductor comprising:
A conductor element, wherein the lattice constant of each layer of the single crystal is stepwise.
Characteristically and / or continuously changing III
Group nitride compound semiconductor device. (73) The group III nitride compound semiconductor device emits light.
(60) to (72), which are elements.
An element according to any of the above. (80) A substrate and 1 on the substrate by MOCVD.
Step the lattice constant at a growth temperature between 000 ° C and 1180 ° C
Grown while changing the target and / or continuously_x
Ga_yIn _1-xyN (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0
≦ x + y ≦ 1), and the first semiconductor layer
Group III nitride compound semiconductors formed on semiconductor layers
And a second semiconductor layer made of the following. (81) The first semiconductor layer is on the second semiconductor layer side
Where the lattice constant is substantially the same as the lattice constant of the second semiconductor layer.
The laminate according to (80), having a number.
body. (82) The lattice constant of the first semiconductor layer changes stepwise.
Growing the first semiconductor layer such that
The thickness of each layer in the constant is 200 nm to 4000 nm.
(81) or (82).
Laminate. (83) The thickness of each layer is 500 nm to 2000.
(82). The laminate according to (82), wherein
body. (84) The thickness of each layer is about 1000 nm.
The laminate according to (82), wherein (85) The thickness of each of the layers is different between the respective layers.
The laminate according to (82) or (83), which is characterized in that: (86) The film thickness of each layer changes stepwise.
The laminate according to (85), wherein: (87) The substrate is sapphire,
The laminate according to any one of (80) to (86). (88) In the surface of the first semiconductor layer which is in contact with the substrate,
(87) wherein the composition is AlN.
The laminate according to item 1. (89) The thickness of the first semiconductor layer is from 400 nm to
(80)-(88), which is 100 μm.
The laminate according to any one of the above. (90) The thickness of the first semiconductor layer is 1000 nm.
積 50 μm, the product according to (89),
Layer body. (91) a substrate, formed on the substrate,_xGa
_yIn_1-xyN (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x
+ Y ≦ 1) in which a plurality of single-crystal layers
Wherein the lattice constant of each layer of the single crystal is
A first and / or continuously changing first semiconductor layer; II
A second semiconductor layer made of a group I nitride compound semiconductor,
A laminate comprising:

[Brief description of the drawings]

FIG. 1 is a diagram showing a configuration of a light emitting diode 1 according to one embodiment of the present invention.

FIG. 2 is a partially enlarged view of the light emitting diode 1;

FIG. 3 is a partially enlarged view of a light emitting diode 2 according to another embodiment of the present invention.

FIG. 4 is a partially enlarged view of a light emitting diode 3 according to another embodiment of the present invention.

[Explanation of symbols]

 1 2 3 light-emitting diode 10 substrate 11 21 31 first semiconductor layer 12 32 n-contact layer 13 light-emitting layer 14 p-contact layer 15 translucent electrode 16 p-electrode 17 n-electrode

 ──────────────────────────────────────────────────続 き Continued from the front page F term (reference) 5F041 AA40 CA05 CA34 CA40 CA46 CA65 CA88 5F045 AA04 AB09 AB14 AB17 AB18 AB40 AC08 AC12 AD14 AD15 AF02 AF03 AF04 AF06 AF09 AF13 BB12 CA10 DA58 EB15 EE12 EE17 5F073 AA74 CA07 CB05 DA07 CB05 DA07 CB EA29

Claims (8)

[Claims] 1. 1000 ° C. on a substrate by MOCVD
～1180 at a growth temperature of _{℃ Al x Ga y In 1-} x-y
Growing a first semiconductor layer made of N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1) while changing its lattice constant stepwise and / or continuously. A method for manufacturing a group III nitride compound semiconductor device, comprising: 2. A second semiconductor layer made of a group III nitride compound semiconductor is formed on the first semiconductor layer, and the first semiconductor layer is formed on the second semiconductor layer side on the second semiconductor layer side. 2. The method according to claim 1, wherein the semiconductor layer has a lattice constant substantially equal to or close to the lattice constant of the semiconductor layer. 3. The method according to claim 1, wherein the first semiconductor layer has a lattice constant substantially equal to or close to a lattice constant of the substrate on the substrate side. . 4. The method according to claim 1, wherein the first semiconductor layer is grown while changing its lattice constant stepwise, and the thickness of each layer at each lattice constant is 200 nm to 4000 nm. The production method according to any one of the above. 5. The film thickness of each layer is 500 nm to 20 nm.
The method according to claim 4, wherein the thickness is 00 nm. 6. The film thickness of each of the layers is about 1000 n.
The method according to claim 4, wherein m is m. 7. The method according to claim 4, wherein the thickness of each of the layers is different between the respective layers. 8. The method according to claim 7, wherein the first semiconductor layer is grown so that the thickness of each of the layers changes stepwise.