KR101337615B1 - GaN-BASED COMPOUND SEMICONDUCTOR AND THE FABRICATION METHOD THEREOF - Google Patents

GaN-BASED COMPOUND SEMICONDUCTOR AND THE FABRICATION METHOD THEREOF Download PDF

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KR101337615B1
KR101337615B1 KR1020060057385A KR20060057385A KR101337615B1 KR 101337615 B1 KR101337615 B1 KR 101337615B1 KR 1020060057385 A KR1020060057385 A KR 1020060057385A KR 20060057385 A KR20060057385 A KR 20060057385A KR 101337615 B1 KR101337615 B1 KR 101337615B1
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South Korea
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layer
indium
rich ingan
type
compound semiconductor
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KR1020060057385A
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Korean (ko)
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KR20080000098A (en
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윤의준
남기범
최주원
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재단법인서울대학교산학협력재단
서울바이오시스 주식회사
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Abstract

A method of manufacturing a gallium nitride compound semiconductor according to an embodiment of the present invention includes the steps of forming a buffer layer on a substrate, forming an n-type GaN layer on the buffer layer, and forming an active layer on the n-type GaN layer. And forming a p-type GaN layer on the active layer, and forming an indium rich InGaN contact layer on the p-type GaN layer.

According to the present invention, as the contact resistance with the transparent electrode formed on the indium rich InGaN contact layer is attenuated using the indium rich InGaN contact layer, the performance of the gallium nitride compound semiconductor is improved.

Gallium nitride, semiconductor compound, sapphire, InGaN, indium rich, contact layer, transparent electrode

Description

Gallium nitride compound semiconductor and its manufacturing method {GaN-BASED COMPOUND SEMICONDUCTOR AND THE FABRICATION METHOD THEREOF}

1 is a cross-sectional view of a light emitting diode according to an embodiment of the present invention.

2 is a flow chart of a method of manufacturing a light emitting diode according to an embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

100: sapphire substrate 200: buffer layer

300: Undoped GaN layer 400: n-type GaN layer

500: active layer 600: p-type GaN layer

700: indium rich InGaN contact layer 800: transparent electrode

900a, 900b: electrode pad

The present invention relates to a gallium nitride compound semiconductor, and more particularly, to a gallium nitride compound semiconductor in which an indium rich InGaN contact layer is formed to reduce contact resistance due to ohmic contact, and a method of manufacturing the same.

Group III-V compound semiconductors provide superior performance in applications such as high speed and high temperature electronics, light emitters and photo detectors. Particularly, gallium nitride (GaN) included in gallium nitride compound semiconductors has a bandgap required for a blue laser and a light emitting diode emitting a blue wavelength spectrum. This is increasing. In addition, alloys of aluminum nitride (AlN), indium nitride (InN) and gallium nitride (GaN) provide spectra across the visible range.

In general, in a gallium nitride compound semiconductor, a buffer layer, an n-type GaN layer, an active layer, a p-type contact layer, and a transparent electrode are formed on a substrate.

In the related art, since p-GaN is used as the p-type contact layer formed under the transparent electrode, contact resistance due to ohmic contact is difficult to obtain 1 × 10 −4 Ωcm 2 or less. Because, the hole density of the p-type GaN has a 10 18 cm due to the acceptor (acceptor) of Mg atoms contained in the p-type GaN - because it is 3 or less. Therefore, efforts are being made to reduce the contact resistance.

The technical problem to be achieved by the present invention is to reduce the contact resistance due to ohmic contact formed on the lower portion of the transparent electrode in the gallium nitride-based compound semiconductor, the gallium nitride-based compound semiconductor layer is stacked and a transparent electrode formed thereon.

According to an aspect of the present invention to achieve these technical problems, the step of forming a buffer layer on the substrate, forming an n-type GaN layer on the buffer layer, forming an active layer on the n-type GaN layer, Forming a p-type GaN layer on the active layer, and forming an indium rich InGaN contact layer on the p-type GaN layer provides a method for manufacturing a nitride semiconductor.

The indium rich InGaN contact layer may be any one of an undoped indium rich InGaN layer, an n type indium rich InGaN layer, and a p type indium rich InGaN layer to which impurities are not added.

The indium rich InGaN contact layer may be formed by mutually stacking at least two of an undoped indium rich InGaN layer, an n type indium rich InGaN layer, and a p type indium rich InGaN layer to which impurities are not added.

According to another aspect of the present invention, there is provided a substrate, a buffer layer formed on the substrate, an n-type GaN layer formed on the buffer layer, an active layer formed on the n-type GaN layer, a p-type GaN layer formed on the active layer, and the p Provided is a gallium nitride compound semiconductor comprising an indium rich InGaN contact layer formed on a GaN layer.

The indium rich InGaN contact layer may be any one of an undoped indium rich InGaN layer to which impurities are not added, an n type indium rich InGaN layer, and a p type indium rich InGaN layer.

The indium rich InGaN contact layer may be formed by mutually stacking at least two of an undoped indium rich InGaN layer, an n type indium rich InGaN layer, and a p type indium rich InGaN layer to which impurities are not added.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, lengths, thicknesses, and the like of layers and regions may be exaggerated for convenience. Like numbers refer to like elements throughout.

1 is a cross-sectional view of a light emitting diode according to an embodiment of the present invention.

Referring to FIG. 1, a light emitting diode according to an embodiment of the present invention includes a sapphire substrate 100, a buffer layer 200, an undoped GaN layer 300, an n-type GaN layer 400, an active layer 500, A p-type GaN layer 600, an indium rich InGaN contact layer 700, a transparent electrode 800, and electrode pads 900a and 900b are included.

The sapphire substrate 100 is made of sapphire having high stability, and a buffer layer 200 is formed on the substrate 100.

The buffer layer 200, the undoped GaN layer 300, the n-type GaN layer 400, the active layer 500, the p-type GaN layer 600, and the indium rich InGaN contact layer 700 are metal organic chemical vapor deposition (MOCVD). , Molecular beam growth (MBE) or hydride vapor phase growth (HVPE) methods and the like. It can also be formed continuously in the same process chamber.

The buffer layer 200 is interposed to mitigate the lattice mismatch between the sapphire substrate 100 and the undoped GaN layer 300. For example, the buffer layer 200 may be Al x Ga 1 - x N (0≤x≤1), which may be metal organic chemical vapor deposition (MOCVD) or hydride vapor phase epitaxy (HVPE). Or molecular beam growth (MBE), metalorganic chemical vapor phase epitaxy (MOCVPE), or the like.

When the buffer layer 200 is formed, trimethyl aluminum (TMAl, Al (CH 3 ) 3 ) and trimethyl gallium (TMG, Ga (CH 3 ) 3 ) are used as source gases of Al and Ga. Ammonia (NH 3 ) is used as the reaction gas. These source gases and reaction gases may be introduced into the reaction chamber, and the buffer layer 200 may be formed at 400 to 1200 ° C.

The undoped GaN layer 300 is grown to grow an n-type GaN layer 400 on the buffer layer 200.

The n-type GaN layer 400 may be formed by doping silicon (Si) in GaN.

The active layer 500 is an area where electrons and holes are recombined and includes InGaN / GaN. The emission wavelength emitted from the light emitting diode is determined by the type of material constituting the active layer 500. The active layer 500 may be a multilayer film in which a quantum well layer and a barrier layer are repeatedly formed. The quantum well layer and the barrier layer may be two-membered to quaternary compound semiconductor layers represented by the general formula Al x In y Ga 1 -x- y N (0? X, y, x + y?

The p-type GaN layer 600 may be formed by doping zinc (Zn) or magnesium (Mg) on GaN.

The indium rich InGaN contact layer 700 is a compound semiconductor layer represented by In x Ga 1- x N (0 <x <1).

Herein, the indium rich InGaN contact layer 700 means that indium (In) is sufficiently contained in InGaN. For example, about 60% to 70% of indium (In) may be contained in InGaN.

As a source gas of Ga, In, N, trimethyl gallium (TMG, Ga (CH 3 ) 3 ), trimethyl indium (TMI, In (CH 3 ) 3 ), ammonia (NH 3 ) is used, Nitrogen (N 2 ) is used as the reaction gas. These source gases and reaction gases may be introduced into the reaction chamber, and the indium rich InGaN contact layer 700 may be formed at 400 to 1200 ° C.

The indium rich InGaN contact layer 700 may be formed of any one of an undoped indium rich InGaN layer, an n type indium rich InGaN layer, and a p type indium rich InGaN layer, to which impurities are not added. Can also be.

The thickness of the indium rich InGaN contact layer 700 is 0.5-30 nm.

The electric field in the indium rich InGaN contact layer 700 consists of a piezoelectric polarization field and an electric field by an ionized acceptor in the surface depletion layer.

These two electric fields reduce contact resistance by reducing the tunneling barrier width and improving the tunneling tranport.

The transparent electrode 800 is formed over the indium rich InGaN contact layer 700. The transparent electrode 800 has a plate shape and transmits light emitted from the active layer 500 to the outside.

The transparent electrode 800 may be formed of a transparent material such as Ni / Au or indium tin oxide (ITO).

The transparent electrode 800 evenly distributes the current input through the electrode pad 900a to increase the luminous efficiency.

The electrode pads 900a and 900b are formed on the transparent electrode 800 and on the n-type GaN layer 400. The electrode pads 900a and 900b are connected to a lead (not shown) by a wire to receive power from an external power source.

2 is a flowchart of a method of manufacturing a light emitting diode according to an embodiment of the present invention.

2, the sapphire substrate 100 is prepared (S1).

Thereafter, the buffer layer 200 is formed on the sapphire substrate 100 (S2).

The buffer layer 200 may include metal organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE) or molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MBE). It can be formed using a method (metalorganic chemical vapor phase epitaxy, MOCVPE) and the like.

The buffer layer 200 may be grown using any one of the above-described crystal growth methods at a pressure of about 10 torr to about 780 torr at 400 to 1200 ° C.

After the buffer layer 200 is formed, an undoped GaN layer 300 having a thickness of 1 μm, an n-type GaN layer 400 having a thickness of 2 μm, an active layer 500 and a p-type GaN layer having a thickness of 0.15 μm are formed on the buffer layer 200. (600) grow in order at 1000 ℃ (S3)

Undoped GaN layer 300, n-type GaN layer 400, active layer 500, p-type GaN layer 600 is a metal organic chemical vapor deposition (MOCVD), hydride vapor deposition (HVPE) or molecular beam growth method ( MBE) and the like. It can also be formed continuously in the same process chamber.

After the p-type GaN layer 600 is formed, a metal organic chemical vapor deposition (MOCVD) or a porous atomic layer epitaxy is deposited on the p-type GaN layer 600 at a pressure of about 10 to 780 torr at 500 to 1200 ° C. Indium rich InGaN contact layer 700 having a thickness of 0.5 to 30 nm is formed by using a method (S4).

After the indium rich InGaN contact layer 700 is formed, a transparent electrode 800 is formed on the indium rich InGaN contact layer 700 (S5).

After the transparent electrode 800 is formed, the indium-rich InGaN contact layer 700, the p-type GaN layer 600, and the active layer 500 are patterned or etched using a photo and etching process to form the n-type GaN layer 400. Some areas are exposed (S6).

 Thereafter, the electrode pad 900b is formed on the exposed n-type GaN layer 400 and the electrode pad 900a is formed on the transparent electrode 800 (S7). Here, the electrode pads 900a and 900b may be formed using a lift off method.

The invention being thus described, it will be obvious that the same way may be varied in many ways. Such modifications are intended to be within the spirit and scope of the invention as defined by the appended claims.

For example, in the description of an embodiment of the present invention, the sapphire substrate has been described, but other types of substrates such as spinel substrate, Si substrate, SiC substrate, ZnO substrate, GaAs substrate, GaN substrate, etc. Of course, it can be used.

According to the present invention, the gallium nitride compound semiconductor is provided with an indium rich InGaN contact layer. The electric field formed in the indium rich InGaN contact layer consists of a piezoelectric polarization field and an electric field by an ionized acceptor in the surface depletion layer.

These two electric fields reduce contact resistance by reducing the tunneling barrier width and improving the tunneling tranport.

As the contact resistance under the transparent electrode is attenuated using the indium rich InGaN contact layer as described above, the performance of the gallium nitride compound semiconductor is improved.

Claims (14)

Forming a buffer layer on the substrate, Forming an n-type GaN layer on the buffer layer; Forming an active layer on the n-type GaN layer; Forming a p-type GaN layer on the active layer; A method of manufacturing a gallium nitride compound semiconductor comprising forming an indium rich InGaN contact layer containing about 60% to about 70% of indium (In) on the p-type GaN layer. The method of claim 1, wherein the indium rich InGaN contact layer, A method for producing a gallium nitride compound semiconductor, characterized in that any one of an undoped indium-rich InAlGaN layer, n-type indium-rich InGaN layer, p-type indium-rich InGaN layer to which impurities are not added. The method of claim 1, wherein the indium rich InGaN contact layer, A method of manufacturing a gallium nitride compound semiconductor, characterized in that at least two or more of an undoped indium rich InGaN layer, an n type indium rich InGaN layer, and a p type indium rich InGaN layer to which impurities are not added are laminated. A substrate; A buffer layer formed on the substrate, An n-type GaN layer formed on the buffer layer, An active layer formed on the n-type GaN layer, A p-type GaN layer formed on the active layer, A gallium nitride compound semiconductor comprising an indium rich InGaN contact layer containing about 60% to about 70% of indium (In) on the p-type GaN layer. The method of claim 4, wherein the indium rich InGaN contact layer, A gallium nitride compound semiconductor, characterized in that any one of an undoped indium-rich InGaN layer, n-type indium-rich InGaN layer, and p-type indium-rich InGaN layer to which impurities are not added. The method of claim 4, wherein the indium rich InGaN contact layer, A gallium nitride compound semiconductor comprising at least two or more of an undoped indium rich InGaN layer, an n type indium rich InGaN layer, and a p type indium rich InGaN layer to which impurities are not added. An n-type semiconductor layer and a p-type semiconductor layer formed on the substrate; An active layer including indium formed between the n-type semiconductor layer and the p-type semiconductor layer; A transparent electrode formed on the p-type semiconductor layer; And A gallium nitride compound semiconductor comprising an indium rich InGaN contact layer containing indium (In) of about 60% to 70% between the p-type semiconductor layer and the transparent electrode. delete The method of claim 7, The gallium nitride compound semiconductor of claim 2, wherein the electric field in the indium-rich InGaN contact layer comprises an electric field by a piezo-electropolar field and an ionized acceptor in the surface depletion layer. The method of claim 9, The electric field is gallium nitride-based compound semiconductor, characterized in that for reducing the tunneling barrier width. The method of claim 7, The p-type semiconductor layer includes a p-GaN layer, And said contact layer is in contact with said p-GaN layer. The method of claim 7, The thickness of the indium rich InGaN contact layer is 0.5 ~ 30nm gallium nitride compound semiconductor, characterized in that. The method of claim 7, And the indium rich InGaN contact layer is formed of any one of an undoped indium rich InGaN, n- indium rich InGaN, and p-InxAlyGaN indium rich InGaN. The method of claim 7, And the indium rich InGaN contact layer is formed by stacking at least two of undoped indium rich InGaN, n-indium rich InGaN, and p-indium rich InGaN.
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Cited By (1)

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Publication number Priority date Publication date Assignee Title
US10062567B2 (en) 2015-06-30 2018-08-28 International Business Machines Corporation Reducing autodoping of III-V semiconductors by atomic layer epitaxy (ALE)

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KR101414652B1 (en) * 2012-06-04 2014-08-06 엘지전자 주식회사 Nitride semiconductor light emitting device
WO2014002959A1 (en) * 2012-06-25 2014-01-03 三菱化学株式会社 PRODUCTION METHOD FOR m-PLANE NITRIDE-BASED LIGHT-EMITTING DIODE

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KR100475005B1 (en) 2001-03-28 2005-03-08 파이오니아 가부시키가이샤 Nitride semiconductor device
KR20050036721A (en) * 2003-10-15 2005-04-20 엘지이노텍 주식회사 Nitride semiconductor light emitting device

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Publication number Priority date Publication date Assignee Title
KR100475005B1 (en) 2001-03-28 2005-03-08 파이오니아 가부시키가이샤 Nitride semiconductor device
KR20050036721A (en) * 2003-10-15 2005-04-20 엘지이노텍 주식회사 Nitride semiconductor light emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10062567B2 (en) 2015-06-30 2018-08-28 International Business Machines Corporation Reducing autodoping of III-V semiconductors by atomic layer epitaxy (ALE)

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