KR101337615B1 - GaN-BASED COMPOUND SEMICONDUCTOR AND THE FABRICATION METHOD THEREOF - Google Patents
GaN-BASED COMPOUND SEMICONDUCTOR AND THE FABRICATION METHOD THEREOF Download PDFInfo
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- KR101337615B1 KR101337615B1 KR1020060057385A KR20060057385A KR101337615B1 KR 101337615 B1 KR101337615 B1 KR 101337615B1 KR 1020060057385 A KR1020060057385 A KR 1020060057385A KR 20060057385 A KR20060057385 A KR 20060057385A KR 101337615 B1 KR101337615 B1 KR 101337615B1
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Abstract
A method of manufacturing a gallium nitride compound semiconductor according to an embodiment of the present invention includes the steps of forming a buffer layer on a substrate, forming an n-type GaN layer on the buffer layer, and forming an active layer on the n-type GaN layer. And forming a p-type GaN layer on the active layer, and forming an indium rich InGaN contact layer on the p-type GaN layer.
According to the present invention, as the contact resistance with the transparent electrode formed on the indium rich InGaN contact layer is attenuated using the indium rich InGaN contact layer, the performance of the gallium nitride compound semiconductor is improved.
Gallium nitride, semiconductor compound, sapphire, InGaN, indium rich, contact layer, transparent electrode
Description
1 is a cross-sectional view of a light emitting diode according to an embodiment of the present invention.
2 is a flow chart of a method of manufacturing a light emitting diode according to an embodiment of the present invention.
<Description of the symbols for the main parts of the drawings>
100: sapphire substrate 200: buffer layer
300: Undoped GaN layer 400: n-type GaN layer
500: active layer 600: p-type GaN layer
700: indium rich InGaN contact layer 800: transparent electrode
900a, 900b: electrode pad
The present invention relates to a gallium nitride compound semiconductor, and more particularly, to a gallium nitride compound semiconductor in which an indium rich InGaN contact layer is formed to reduce contact resistance due to ohmic contact, and a method of manufacturing the same.
Group III-V compound semiconductors provide superior performance in applications such as high speed and high temperature electronics, light emitters and photo detectors. Particularly, gallium nitride (GaN) included in gallium nitride compound semiconductors has a bandgap required for a blue laser and a light emitting diode emitting a blue wavelength spectrum. This is increasing. In addition, alloys of aluminum nitride (AlN), indium nitride (InN) and gallium nitride (GaN) provide spectra across the visible range.
In general, in a gallium nitride compound semiconductor, a buffer layer, an n-type GaN layer, an active layer, a p-type contact layer, and a transparent electrode are formed on a substrate.
In the related art, since p-GaN is used as the p-type contact layer formed under the transparent electrode, contact resistance due to ohmic contact is difficult to obtain 1 × 10 −4 Ωcm 2 or less. Because, the hole density of the p-type GaN has a 10 18 cm due to the acceptor (acceptor) of Mg atoms contained in the p-type GaN - because it is 3 or less. Therefore, efforts are being made to reduce the contact resistance.
The technical problem to be achieved by the present invention is to reduce the contact resistance due to ohmic contact formed on the lower portion of the transparent electrode in the gallium nitride-based compound semiconductor, the gallium nitride-based compound semiconductor layer is stacked and a transparent electrode formed thereon.
According to an aspect of the present invention to achieve these technical problems, the step of forming a buffer layer on the substrate, forming an n-type GaN layer on the buffer layer, forming an active layer on the n-type GaN layer, Forming a p-type GaN layer on the active layer, and forming an indium rich InGaN contact layer on the p-type GaN layer provides a method for manufacturing a nitride semiconductor.
The indium rich InGaN contact layer may be any one of an undoped indium rich InGaN layer, an n type indium rich InGaN layer, and a p type indium rich InGaN layer to which impurities are not added.
The indium rich InGaN contact layer may be formed by mutually stacking at least two of an undoped indium rich InGaN layer, an n type indium rich InGaN layer, and a p type indium rich InGaN layer to which impurities are not added.
According to another aspect of the present invention, there is provided a substrate, a buffer layer formed on the substrate, an n-type GaN layer formed on the buffer layer, an active layer formed on the n-type GaN layer, a p-type GaN layer formed on the active layer, and the p Provided is a gallium nitride compound semiconductor comprising an indium rich InGaN contact layer formed on a GaN layer.
The indium rich InGaN contact layer may be any one of an undoped indium rich InGaN layer to which impurities are not added, an n type indium rich InGaN layer, and a p type indium rich InGaN layer.
The indium rich InGaN contact layer may be formed by mutually stacking at least two of an undoped indium rich InGaN layer, an n type indium rich InGaN layer, and a p type indium rich InGaN layer to which impurities are not added.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, lengths, thicknesses, and the like of layers and regions may be exaggerated for convenience. Like numbers refer to like elements throughout.
1 is a cross-sectional view of a light emitting diode according to an embodiment of the present invention.
Referring to FIG. 1, a light emitting diode according to an embodiment of the present invention includes a
The
The
The
When the
The undoped GaN
The n-
The
The p-type GaN layer 600 may be formed by doping zinc (Zn) or magnesium (Mg) on GaN.
The indium rich InGaN
Herein, the indium rich InGaN
As a source gas of Ga, In, N, trimethyl gallium (TMG, Ga (CH 3 ) 3 ), trimethyl indium (TMI, In (CH 3 ) 3 ), ammonia (NH 3 ) is used, Nitrogen (N 2 ) is used as the reaction gas. These source gases and reaction gases may be introduced into the reaction chamber, and the indium rich InGaN
The indium rich InGaN
The thickness of the indium rich InGaN
The electric field in the indium rich
These two electric fields reduce contact resistance by reducing the tunneling barrier width and improving the tunneling tranport.
The
The
The
The
2 is a flowchart of a method of manufacturing a light emitting diode according to an embodiment of the present invention.
2, the
Thereafter, the
The
The
After the
After the p-type GaN layer 600 is formed, a metal organic chemical vapor deposition (MOCVD) or a porous atomic layer epitaxy is deposited on the p-type GaN layer 600 at a pressure of about 10 to 780 torr at 500 to 1200 ° C. Indium rich
After the indium rich
After the
Thereafter, the
The invention being thus described, it will be obvious that the same way may be varied in many ways. Such modifications are intended to be within the spirit and scope of the invention as defined by the appended claims.
For example, in the description of an embodiment of the present invention, the sapphire substrate has been described, but other types of substrates such as spinel substrate, Si substrate, SiC substrate, ZnO substrate, GaAs substrate, GaN substrate, etc. Of course, it can be used.
According to the present invention, the gallium nitride compound semiconductor is provided with an indium rich InGaN contact layer. The electric field formed in the indium rich InGaN contact layer consists of a piezoelectric polarization field and an electric field by an ionized acceptor in the surface depletion layer.
These two electric fields reduce contact resistance by reducing the tunneling barrier width and improving the tunneling tranport.
As the contact resistance under the transparent electrode is attenuated using the indium rich InGaN contact layer as described above, the performance of the gallium nitride compound semiconductor is improved.
Claims (14)
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Cited By (1)
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US10062567B2 (en) | 2015-06-30 | 2018-08-28 | International Business Machines Corporation | Reducing autodoping of III-V semiconductors by atomic layer epitaxy (ALE) |
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KR101414652B1 (en) * | 2012-06-04 | 2014-08-06 | 엘지전자 주식회사 | Nitride semiconductor light emitting device |
WO2014002959A1 (en) * | 2012-06-25 | 2014-01-03 | 三菱化学株式会社 | PRODUCTION METHOD FOR m-PLANE NITRIDE-BASED LIGHT-EMITTING DIODE |
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KR100475005B1 (en) | 2001-03-28 | 2005-03-08 | 파이오니아 가부시키가이샤 | Nitride semiconductor device |
KR20050036721A (en) * | 2003-10-15 | 2005-04-20 | 엘지이노텍 주식회사 | Nitride semiconductor light emitting device |
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KR100475005B1 (en) | 2001-03-28 | 2005-03-08 | 파이오니아 가부시키가이샤 | Nitride semiconductor device |
KR20050036721A (en) * | 2003-10-15 | 2005-04-20 | 엘지이노텍 주식회사 | Nitride semiconductor light emitting device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US10062567B2 (en) | 2015-06-30 | 2018-08-28 | International Business Machines Corporation | Reducing autodoping of III-V semiconductors by atomic layer epitaxy (ALE) |
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