CN105023980A - LED with P type A1InGaN contact layer, and preparation method thereof - Google Patents

LED with P type A1InGaN contact layer, and preparation method thereof Download PDF

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CN105023980A
CN105023980A CN201410182935.6A CN201410182935A CN105023980A CN 105023980 A CN105023980 A CN 105023980A CN 201410182935 A CN201410182935 A CN 201410182935A CN 105023980 A CN105023980 A CN 105023980A
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逯瑶
王成新
曲爽
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Shandong Inspur Huaguang Optoelectronics Co Ltd
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Shandong Inspur Huaguang Optoelectronics Co Ltd
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Abstract

The invention relates to an LED with a P type A1InGaN contact layer, and a preparation method thereof. The structure successively comprises a substrate, a nucleation layer, a buffer layer, an N type GaN layer, a multi-quantum well luminescent layer, and a P type structure from bottom to top; wherein the P type structure is successively composed of a P type A1GaN layer, a P type GaN layer and a P type A1InGaN contact layer. The In doping amount in the P type A1InGaN layer of an LED chip changes regularly, thereby changing the energy band distribution of the P type A1InGaN layer, weakening the blocking effect of the valance band of the P type A1InGaN layer in hole injection, and meanwhile not weakening the blocking effect to other electrons. The structure can improve surface coarsening to a certain degree; through the structure, the ohmic contact of the LED chip can be reduced by about 10%.

Description

A kind of have LED of P type AlInGaN contact layer and preparation method thereof
Technical field
The present invention relates to and a kind of there is LED of P type AlInGaN contact layer and preparation method thereof, belong to photoelectron technical field.
Background technology
Earlier 1990s, be that the third generation wide bandgap semiconductor materials of representative obtains historical breakthrough with nitride, scientific research personnel successfully prepares blue green light and ultraviolet leds on gallium nitride material, makes LED illumination become possibility.1971, first gallium nitride based LED tube core emerged, 1994, and the blue light GaN base diode of high electron mobility has appearred in gallium nitride HEMT, and gallium nitride semiconductor Materials is very rapid.
The advantages such as semiconductor light-emitting-diode has that volume is little, sturdy and durable, luminescence band controllability is strong, the high and low thermal losses of light efficiency, light decay are little, energy-saving and environmental protection, the fields such as, short haul connection interconnected at total colouring, backlight, signal lamp, optical computer have a wide range of applications, and become the focus of current electron electric power area research gradually.Gallium nitride material has the series of advantages such as broad-band gap, high electron mobility, high heat conductance, high stability, therefore has a wide range of applications in short-wave long light-emitting device, light-detecting device and high power device and huge market prospects.
Usually, the LED p-type epitaxial region that comprises n-type substrate, be formed at the N-shaped epitaxial region on this substrate and be formed on N-shaped epitaxial region.For the ease of applying voltage to device, anode ohmic contact is formed in the p-type area (being generally the p-type epitaxial layer of exposure) of this device, and cathode ohmic contact is formed in the n-type area (the N-shaped epitaxial loayer of such as substrate or exposure) of this device.Because GaN dissociation pressure of nitrogen when high growth temperature is very high, be difficult to obtain large-sized GaN body monocrystal material, current most of GaN epitaxy device (as Sapphire Substrate) can only carry out heteroepitaxial growth on other substrates.
P type island region manufactures the requisite important step of GaN base LED component, and P-GaN structure and epitaxial growth method thereof are the keys improving GaN base LED light extraction efficiency.Owing to being difficult to form the good P type III-nitride material (such as GaN, AlGaN, InGaN, AlInGaN and AlInN) of conduction, in P-type layer the shortage of CURRENT DISTRIBUTION may become these materials form the limiting factor of LED performance.Therefore, the P-type layer surf zone as much as possible that we are desirably in exposure forms ohmic contact, thus directs current through region large as far as possible, this device active area.But, provide large positive contact to be harmful from some aspect to device performance.Usual expectation extracts light as much as possible from light-emitting diode.Because anode ohmic contact generally includes metal level, the light produced in LED active area partly can absorb in ohmic contact, reduces total luminous efficiency of this device.In some devices, the P-type layer that we are desirably in exposure forms reflective metal layer, make usually to be reflected back toward in auto levelizer from the light that device is escaped through P-type layer, be extracted through substrate.But such as aluminium is not formed with the high reflecting metal of silver and contacts with the good ohmic of P type nitride material.Therefore, usually between P type nitride layer and reflector, provide ohmic contact, the absorption reduced in ohmic contact becomes the problem be concerned about in these devices.Therefore, the method improved existing ohmic contact structure and form ohmic contact structure on P type nitride material is needed.
At present, the specific contact resistivity of the P-GaN of domestic main LED producer is all only 10 -2ohmcm 2the order of magnitude, this is because P-GaN hole concentration is too low and lack caused by the sufficiently high metal of work function, just can form good ohmic contact when only having P type GaN heavily doped.2000, document " Jang J S; Park S J; Seong T Y etal.Low resistance and thermallystable Pt/Ru Ohmic contacts to p-type GaN [J] .Physica Status Solidi (A) AppliedResearch; 2000; 180 (1): 103-107 " relate to and adopts Pt/Ru and P-GaN contact, obtains low-resistance 2.2 × 10 through thermal annealing -6ohmcm 2.The people such as Jin-Kuo Ho make contacting metal with Ni/Au, anneal 500 DEG C, obtain 4 × 10 under oxygen atmosphere -6ohmcm 2contact gear ratio resistance (see document Ho J K, Jong C S, Huang C N et al.Low-resistance ohmiccontacts to p-type GaN achieved by the oxidation of Ni/Au films [J] .Appl.Phys.Lett., 1999,86 (8): 4491-4497).The people such as Kumakura insert the strain InGaN contact layer of one deck 2nm between Pd/Au and P-GaN, quite low contact resistivity is just obtained (see document Kumakura K without any process, Makimoto T, Kobayashi N.Kobayashi.Low-resistance nonalloyed ohmic contact to P-type GaN usingstrained InGaN contact layer [J] .Appl.Phys.Lett.2001,79 (16): 2588-2590).
For how to improve ohmic contact, there are some patent documentations both at home and abroad.Disclosed ultra-thin ohmic contact for P type nitride-based light emitting device of Chinese patent literature CN102324455A and forming method thereof, provide a kind of semiconductor-based light-emitting device (LED), the metal ohmic contact in P type nitride layer and this p-type nitride layer can be comprised.This metal ohmic contact average thickness is about less than ohmic contact resistance (10 -3ohmcm 2).Deposition rate is about per second arrive under the measurement wavelength of about 350nm, be enough to provide the normalized transmissivity being about greater than 98%, to be provided for the metal level with the first average thickness of metal ohmic contact, and it is monitored to accompany the thickness of this metal level on sheet to indicate.If this instruction is higher than predetermined instruction threshold value, then further with subsequent time intervals or subsequent rate plated metal to increase average thickness.But this patented method is its thickness wayward in deposition process.
Chinese patent literature CN101183642A disclosed " a kind of preparation method of P-GaN low-resistance Ohm contact ", this patent relates to a kind of preparation method of P type gallium nitride low-resistance Ohm contact, P-GaN structure grows the P-InGaN/P-AlGaN superlattice layer in 5 cycles, on grow P-InGaN cap rock, result shows that adopting p-InGaN/p-AlGaN superlattice to make top layer can obtain lower specific contact resistivity.In these superlattice there is strain compensation effect in P-InGaN and P-AlGaN, can improve material surface quality, improve the quality of P-GaN film, but hole concentration is comparatively difficult to ensure card.
Surface texture technology is a kind of geometric a kind of technology changing GaN and air contact surfaces, improves electronic device luminous efficiency from another point of view.Disclosed in Chinese patent literature CN101521258A " a kind of method improving LED external quantum efficiency ", this method provide a kind of method of roughening, be the Mg doping content by improving surperficial P type GaN, thus reach the object of surface coarsening.But this patent uses the method for heavily doped Mg to carry out alligatoring can make reative cell there is the memory effect of Mg atom, shortens the maintenance period of MOCVD device, be unfavorable for the stability of producing.
Chinese patent literature CN102789976A disclosed " a kind of manufacture method of GaN base LED chip ", relate to a kind of GaN base LED manufacture method with low series resistance and good P type ohmic contact, comprises step: provide a GaN base LED; Clean described GaN base LED, and be dried; At described epitaxial wafer P-GaN deposited on silicon one gallium room inducing layer; Aforementioned GaN base LED is annealed; Remove the gallium room inducing layer on described GaN base LED surface; GaN base LED through above process makes P type ohmic contact layer and P, N electrode.Compared with conventional LED chips manufacture method, the low 0.2V of the chip voltage that this method process obtains, brightness does not have difference.
Summary of the invention
Not enough according to prior art, the invention provides a kind of LED with P type AlInGaN contact layer, this structure can improve P type GaN structure hole concentration, thus lifting external quantum efficiency, gained P type contact layer superlattice structure lattice mismatch is little, inherently reduce contact resistance, improve P type GaN film quality, improve light extraction efficiency.
Summary of the invention:
The present invention is after the regular change of doping by In in P type AlInGaN layer set in LED chip, what change P type AlInGaN layer can be with distribution, the barrier effect when valence band reducing P type AlInGaN layer is injected hole, does not weaken its barrier effect to electronics simultaneously.This structure can improve surface coarsening to a certain extent, improves P type GaN film quality, improves light extraction efficiency.By adopting this structure, the ohmic contact of LED chip can reduce about 10%.
Term illustrates:
1, LED: the abbreviation of light-emitting diode.
Detailed Description Of The Invention:
Technical scheme of the present invention is as follows:
Have a LED for P type AlInGaN contact layer, its structure comprises substrate from the bottom to top successively, nucleating layer, resilient coating, N-type GaN layer, multiple quantum well light emitting layer, P type structure; Wherein,
Described nucleating layer is gallium nitride layer, one of aln layer or gallium nitride layer;
Described resilient coating is undoped GaN layer;
Described multiple quantum well light emitting layer periodically replaces superposition by InGaN potential well layer and GaN barrier layer to form;
Described P type structure composition is followed successively by P type AlGaN layer, P type GaN layer and P type AlInGaN contact layer.
Preferred according to the present invention, described multiple quantum well light emitting layer is 5-20 cycle.
A kind of preparation method with the LED of P type AlInGaN contact layer that the present invention is above-mentioned, comprises the following steps:
(1) sapphire or silicon carbide substrates are put into the reative cell of metal-organic chemical vapor deposition equipment (MOCVD) equipment, be heated to 1000-1500 DEG C in a hydrogen atmosphere, process 5-30 minute;
(2) growing gallium nitride, aluminium nitride or aluminum gallium nitride nucleating layer on the sapphire processed or silicon carbide substrates;
(3) on above-mentioned nucleating layer, undoped nitride buffer layer, N-type GaN layer and multiple quantum well light emitting layer is grown;
(4) growing P-type structure on above-mentioned multiple quantum well light emitting layer, comprises P type AlGaN layer, P type GaN layer and P type AlInGaN contact layer; Wherein comprise the following steps during the growth of P type AlInGaN contact layer:
Growth temperature be 200-1200 DEG C, under pressure is the environment of 120-800mbar, open Al source, Al source flux is 56-104sccm; Before Al source passes into, simultaneously or afterwards, open In source, In source initial flow is 0-800sccm; This layer growth time is 20-600s, Mg doping content is 0.1 × 10 19/ cm -3-3.5 × 10 20/ cm -3; In source flux variable quantity per second is that to pass into the time be 20-600s in 0.3-100sccm, In source, like this along with the speed of In source flux constantly changes the P type AlInGaN contact layer obtaining one group of In content gradually variational.
According to the present invention, in preferred above-mentioned steps (2), gallium nitride nucleating layer growth temperature 440-800 DEG C, thickness 15-600nm; Aluminium nitride and aluminum gallium nitride nucleating layer, growth temperature 600-1250 DEG C, thickness 30-200nm.
According to the present invention, in preferred above-mentioned steps (3), undoped gallium nitride layer buffer growth temperature is 1000-1200 DEG C, and thickness is 0.1-3 μm; N-type GaN layer growth temperature is 1000-1405 DEG C, and thickness is 0.3-2.5 μm; The thickness of multiple quantum well light emitting layer is 200-300nm, is superposed alternately form by the InGaN potential well layer in 5-20 cycle and GaN barrier layer; The thickness of the described InGaN potential well layer in single cycle is 2-3.5nm, and the thickness of the described GaN barrier layer in single cycle is 5-14nm.
According to the present invention, in preferred above-mentioned steps (4), P type AlGaN layer growth temperature is 500-900 DEG C, Mg doping content 3 × 10 18/ cm -3-8 × 10 19/ cm -3.
According to the present invention, in preferred above-mentioned steps (4), P type GaN layer growth temperature is 800-1200 DEG C, Mg doping content 5 × 10 19/ cm -3-8 × 10 19/ cm -3.
According to the present invention, in preferred above-mentioned steps (4), P type AlInGaN contact layer thickness is 2-800nm.
The P type AlInGaN contact layer structure that the present invention is above-mentioned, for the preparation of gallium nitride based light emitting diode.
According to the present invention, each described grown layer is metal-organic chemical vapor deposition equipment (MOCVD) epitaxially grown layer.
Excellent results of the present invention:
The present invention is directed to the problem that existing P type GaN ohmic contact resistance is large, provide a kind of and there is LED of P type AlInGaN contact layer and preparation method thereof.After utilizing the regular change of doping of In in P type AlInGaN contact layer, what change P type AlInGaN layer can be with distribution, the barrier effect when valence band reducing P type AlInGaN layer is injected hole, does not weaken its barrier effect to electronics simultaneously.Utilize polarity effect, Mg doping efficiency gets a promotion, and forms two-dimensional electron gas, to improve P type GaN surface voids concentration on P type GaN surface.This structure can improve surface coarsening to a certain extent.By adopting this structure, the ohmic contact of LED chip reduces about 10%.
Accompanying drawing explanation
Fig. 1 is the LED structure schematic diagram that the present invention has P type AlInGaN form touch layer.
In Fig. 1,1, substrate, 2, nucleating layer, 3, resilient coating, 4, N-type GaN layer, 5, multiple quantum well light emitting layer, 6, P type AlGaN layer, 7, P type GaN layer, 8, P type AlInGaN contact layer.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the present invention will be further described, but be not limited thereto.
Embodiment 1,
With reference to figure 1, to prepare the LED structure with P type AlInGaN contact layer on silicon carbide substrates by metal-organic chemical vapor deposition equipment method, specifically comprise the following steps:
(1) silicon carbide substrates 1 puts into the reative cell of metal-organic chemical vapor deposition equipment stove (MOCVD) equipment, is heated to 1250 DEG C in a hydrogen atmosphere, processes 15 minutes;
(2) growing aluminum nitride nucleating layer 2 in silicon carbide substrates 1, growth temperature is 750 DEG C, thickness 45nm, and growth pressure is 50mbar;
(3) on aln nucleation layer 2, grow undoped gallium nitride layer resilient coating 3, growth temperature is 1100 DEG C, and growth thickness is 2 μm, and growth rate is 1.9 μm/h;
(4) on nitride buffer layer 3, grow N-type GaN layer 4, doping concentration is 4 × 10 18/ cm -3, thickness is 2 μm, and growth temperature is about 1005 DEG C;
(5) in N-type GaN layer 4, grow multiple quantum well light emitting layer 5, wherein, potential well layer is InGaN material, and barrier layer is GaN material, and growth temperature is 800 DEG C, and Multiple Quantum Well growth cycle is 15;
(6) growing P-type AlGaN layer on multiple quantum well light emitting layer 5, P type AlGaN layer growth temperature is 550 DEG C, Mg doping content 8.5 × 10 18/ cm -3.
(7) growth P-type GaN layer 6 in P type AlGaN layer, growth temperature is 1000 DEG C, Mg doping content 5.5 × 10 19/ cm -3;
(8) growing P-type AlInGaN contact layer 7 in P type GaN layer 6, reaction chamber temperature is 1100 DEG C, pressure 200torr, and growth time is 300s, Mg doping content is 1 × 10 19/ cm -3; Open Al source, Al source flux is 70sccm, and the time is 300s; Open In source while opening Al source, initial In source flux is that 10sccm, In source flux increase 0.5sccm, In per second source passes into time 300s, obtains the P type AlInGaN contact layer that one group of thickness is the In content gradually variational of 60nm.
The nurse contact adopting the LED of structure of the present invention to compare traditional LED reduces 10%.
Embodiment 2,
With reference to figure 1, to prepare the LED structure with P type AlInGaN contact layer on a sapphire substrate by metal-organic chemical vapor deposition equipment method, specifically comprise the following steps:
(1) Sapphire Substrate 1 puts into the reative cell of metal-organic chemical vapor deposition equipment stove (MOCVD) equipment, is heated to 1000 DEG C in a hydrogen atmosphere, processes 20 minutes;
(2) in Sapphire Substrate 1, grow aluminum gallium nitride nucleating layer 2, growth temperature is 600 DEG C, thickness 120nm, and growth pressure is 500torr;
(3) on aluminum gallium nitride nucleating layer 2, grow undoped gallium nitride layer resilient coating 3, growth temperature is 1100 DEG C, and growth thickness is 1.8 μm, and growth rate is 2 μm/h;
(4) on nitride buffer layer 3, grow N-type GaN layer 4, doping concentration is 1 × 10 19/ cm -3, thickness is 2 μm, and growth temperature is about 1250 DEG C;
(5) in N-type GaN layer 4, grow multiple quantum well light emitting layer 5, wherein, potential well layer is InGaN material, and barrier layer is GaN material, and growth temperature is 750 DEG C, and Multiple Quantum Well growth cycle is 18;
(6) growing P-type AlGaN layer on multiple quantum well light emitting layer 5, P type AlGaN layer growth temperature is 600 DEG C, Mg doping content 9.8 × 10 18/ cm -3;
(7) growth P-type GaN layer 6 in P type AlGaN layer, growth temperature is 950 DEG C, Mg doping content 9 × 10 18/ cm -3;
(8) growing P-type AlInGaN contact layer 7 in P type GaN layer 6, reaction chamber temperature is 950 DEG C, pressure 200torr, and growth time is 300s, Mg doping content is 1.2 × 10 19/ cm -3; Open Al source, Al source flux is 70sccm, and the time is 300s; After passing into Al source 100s, open In source, initial In source flux is that 10sccm, In source flux increase 1sccm, In per second source passes into time 200s, obtains the P type AlInGaN contact layer that one group of thickness is the In content gradually variational of 80nm.
The nurse contact adopting the LED of structure of the present invention to compare traditional LED reduces 5%.
Embodiment 3,
With reference to figure 1, to prepare the LED structure with P type AlInGaN contact layer on a sapphire substrate by metal-organic chemical vapor deposition equipment method, specifically comprise the following steps:
(1) Sapphire Substrate 1 puts into the reative cell of metal-organic chemical vapor deposition equipment stove (MOCVD) equipment, is heated to 1000 DEG C in a hydrogen atmosphere, processes 15 minutes;
(2) growing gallium nitride nucleating layer 2 in Sapphire Substrate 1, growth temperature is 670 DEG C, thickness 600nm, and growth pressure is 400mbar;
(3) on gallium nitride nucleating layer 2, grow undoped nitride buffer layer 3, growth temperature is 1050 DEG C, and growth thickness is 1.5 μm, and growth rate is 2.3 μm/h;
(4) on nitride buffer layer 3, grow N-type GaN layer 4, doping concentration is 3 × 10 18/ cm -3, thickness is 1.8 μm, and growth temperature is about 1200 DEG C;
(5) in N-type GaN layer 4, grow multiple quantum well light emitting layer 5, wherein, potential well layer is InGaN material, and barrier layer is GaN material, and growth temperature is 690 DEG C, and Multiple Quantum Well growth cycle is 6;
(6) growing P-type AlGaN layer on multiple quantum well light emitting layer 5, growth temperature is 750 DEG C, Mg doping content 1.2 × 10 19/ cm -3;
(7) growth P-type GaN layer 6 in P type AlGaN layer, growth temperature is 1150 DEG C, and Mg doping content is 4.5 × 10 19/ cm -3;
(8) growing P-type AlInGaN contact layer 7 in P type GaN layer 6, reaction chamber temperature is 700 DEG C, pressure 200torr, and growth time is 200s, Mg doping content is 8.2 × 10 19/ cm -3; Open Al source, Al source flux is 75sccm, and the time is 200s; After Al source passes into 50s, open In source, initial In source flux is 25sccm, during front 100s, and In source flux increase per second 5sccm; After In flow reaches 525sccm, In source flux minimizing per second 5sccm, time remaining 50s, obtain the P type AlInGaN contact layer that one group of thickness is the In content gradually variational of 80nm.
The nurse contact adopting the LED of structure of the present invention to compare traditional LED reduces 10%.

Claims (7)

1. have a LED for P type AlInGaN contact layer, its structure comprises substrate from the bottom to top successively, nucleating layer, resilient coating, N-type GaN layer, multiple quantum well light emitting layer, P type structure; Wherein,
Described nucleating layer is gallium nitride layer, one of aln layer or gallium nitride layer;
Described resilient coating is undoped GaN layer;
Described multiple quantum well light emitting layer periodically replaces superposition by InGaN potential well layer and GaN barrier layer to form;
Described P type structure composition is followed successively by P type AlGaN layer, P type GaN layer and P type AlInGaN contact layer.
2. an a kind of LED manufacture method with P type AlInGaN contact layer according to claim 1, comprises the following steps:
(1) sapphire or silicon carbide substrates are put into the reative cell of metal-organic chemical vapor deposition equipment (MOCVD) equipment, be heated to 1000-1500 DEG C in a hydrogen atmosphere, process 5-30 minute;
(2) growing gallium nitride, aluminium nitride or aluminum gallium nitride nucleating layer on the sapphire processed or silicon carbide substrates;
(3) on above-mentioned nucleating layer, undoped nitride buffer layer, N-type GaN layer and multiple quantum well light emitting layer is grown;
(4) growing P-type structure on above-mentioned multiple quantum well light emitting layer, comprises P type AlGaN layer, P type GaN layer and P type AlInGaN contact layer; Wherein comprise the following steps during the growth of P type AlInGaN contact layer:
Growth temperature be 200-1200 DEG C, under pressure is the environment of 120-800mbar, open Al source, Al source flux is 56-104sccm; Before Al source passes into, simultaneously or afterwards, open In source, In source initial flow is 0-800sccm; This layer growth time is 20-600s, Mg doping content is 0.1 × 10 19/ cm -3-3.5 × 10 20/ cm -3; In source flux variable quantity per second is that to pass into the time be 20-600s in 0.3-100sccm, In source, like this along with the speed of In source flux constantly changes the P type AlInGaN contact layer obtaining one group of In content gradually variational.
3. a kind of LED manufacture method with P type AlInGaN contact layer according to claim 2, is characterized in that, in described step (2), and gallium nitride nucleating layer growth temperature 440-800 DEG C, thickness 15-600nm; Aluminium nitride and aluminum gallium nitride nucleating layer, growth temperature 600-1250 DEG C, thickness 30-200nm.
4. a kind of LED manufacture method with P type AlInGaN contact layer according to claim 2, is characterized in that, in described step (3), undoped gallium nitride layer buffer growth temperature is 1000-1200 DEG C, and thickness is 0.1-3 μm; N-type GaN layer growth temperature is 1000-1405 DEG C, and thickness is 0.3-2.5 μm; The thickness of multiple quantum well light emitting layer is 200-300nm, is superposed alternately form by the InGaN potential well layer in 5-20 cycle and GaN barrier layer; The thickness of the described InGaN potential well layer in single cycle is 2-3.5nm, and the thickness of the described GaN barrier layer in single cycle is 5-14nm.
5. a kind of LED manufacture method with P type AlInGaN contact layer according to claim 2, is characterized in that, in described step (4), P type AlGaN layer growth temperature is 500-900 DEG C, Mg doping content 3 × 10 18/ cm -3-8 × 10 19/ cm -3.
6. a kind of LED manufacture method with P type AlInGaN contact layer according to claim 2, is characterized in that, in described step (4), P type GaN layer growth temperature is 800-1200 DEG C, Mg doping content 5 × 10 19/ cm -3-8 × 10 19/ cm -3.
7. a kind of LED manufacture method with P type AlInGaN contact layer according to claim 2, is characterized in that, in described step (4), P type AlInGaN contact layer thickness is 2-800nm.
CN201410182935.6A 2014-04-25 2014-04-25 LED with P type A1InGaN contact layer, and preparation method thereof Pending CN105023980A (en)

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CN106410001A (en) * 2016-06-23 2017-02-15 孙月静 Novel AlGaN-based ultraviolet light emitting diode
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CN111081836A (en) * 2020-01-21 2020-04-28 福建兆元光电有限公司 Light emitting diode and method for manufacturing the same
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CN105552178A (en) * 2016-01-20 2016-05-04 华灿光电(苏州）有限公司 Gallium nitride-based light-emitting diode epitaxial wafer and preparation method thereof
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CN105702829A (en) * 2016-04-22 2016-06-22 河北工业大学 Light emitting diode epitaxy structure provided with P-type ohmic contact layer
CN105702829B (en) * 2016-04-22 2019-05-31 河北工业大学 Light emitting diode epitaxial structure with P-type ohmic contact layer
CN106410001A (en) * 2016-06-23 2017-02-15 孙月静 Novel AlGaN-based ultraviolet light emitting diode
CN106410001B (en) * 2016-06-23 2018-10-19 孙月静 A kind of AlGaN bases UV LED
CN107369749A (en) * 2017-06-20 2017-11-21 华灿光电(苏州）有限公司 The epitaxial structure of light emitting diode
CN111081836A (en) * 2020-01-21 2020-04-28 福建兆元光电有限公司 Light emitting diode and method for manufacturing the same
CN116504896A (en) * 2023-06-29 2023-07-28 江西兆驰半导体有限公司 Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode
CN116565080A (en) * 2023-07-11 2023-08-08 江西兆驰半导体有限公司 Light emitting diode and preparation method thereof

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Application publication date: 20151104