CN105161592A - LED having N type AlInGaN contact layer and preparation method - Google Patents
LED having N type AlInGaN contact layer and preparation method Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 35
- 229910002601 GaN Inorganic materials 0.000 claims description 179
- 230000004888 barrier function Effects 0.000 claims description 31
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 27
- 239000011248 coating agent Substances 0.000 claims description 25
- 238000000576 coating method Methods 0.000 claims description 25
- 230000004907 flux Effects 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 23
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 18
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 18
- 229910052594 sapphire Inorganic materials 0.000 claims description 13
- 239000010980 sapphire Substances 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 11
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910017083 AlN Inorganic materials 0.000 claims description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 6
- 238000009826 distribution Methods 0.000 abstract description 3
- 230000000903 blocking effect Effects 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 230000003746 surface roughness Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 22
- 229910052799 carbon Inorganic materials 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 150000004767 nitrides Chemical class 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000000605 extraction Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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Abstract
An LED having an N type AlInGaN contact layer and a preparation method. The structure comprises a substrate, a nucleating layer, a buffer layer, an N type GaN layer, a multi-quantum-well luminous layer and a P type structure in sequence from bottom to top, and the P type structure includes a P type AlGaN layer, a P type GaN layer and an N type AlInGaN contact layer in sequence. The nucleating layer, the buffer layer, the N type GaN layer, the multi-quantum-well luminous layer, the P type AlGaN layer, the P type GaN layer and the N type AlInGaN layer are grown on the substrate in sequence, through regular changes of the doping amount of In in the N type AlInGaN layer arranged in an LED chip, energy band distribution of the N type AlInGaN layer is changed, a blocking effect of a valence band of the N type AlInGaN layer on hole injection is weakened while a blocking effect on electrons is not weakened, surface roughness can be improved to some extent, and ohmic contact of the LED chip can be reduced by about 10%.
Description
Technical field
The present invention relates to a kind of LED (light-emitting diode) with N-type AlInGaN contact layer and preparation method thereof, belong to photoelectron technical field.
Background technology
Earlier 1990s, be that the third generation wide bandgap semiconductor materials of representative obtains historical breakthrough with nitride, scientific research personnel successfully prepares blue green light and ultraviolet leds on gallium nitride material, makes LED illumination become possibility.1971, first gallium nitride based LED tube core emerged, 1994, and the blue light GaN base diode of high electron mobility has appearred in gallium nitride HEMT, and gallium nitride semiconductor Materials is very rapid.
The advantages such as semiconductor light-emitting-diode has that volume is little, sturdy and durable, luminescence band controllability is strong, the high and low thermal losses of light efficiency, light decay are little, energy-saving and environmental protection, the fields such as, short haul connection interconnected at total colouring, backlight, signal lamp, optical computer have a wide range of applications, and become the focus of current electron electric power area research gradually.Gallium nitride material has the series of advantages such as broad-band gap, high electron mobility, high heat conductance, high stability, therefore has a wide range of applications in short-wave long light-emitting device, light-detecting device and high power device and huge market prospects.
Usually, the LED p-type epitaxial region that comprises n-type substrate, be formed at the N-shaped epitaxial region on this substrate and be formed on N-shaped epitaxial region.For the ease of applying voltage to device, anode ohmic contact is formed in the p-type area (being generally the p-type epitaxial layer of exposure) of this device, and cathode ohmic contact is formed in the n-type area (the N-shaped epitaxial loayer of such as substrate or exposure) of this device.Because GaN dissociation pressure of nitrogen when high growth temperature is very high, be difficult to obtain large-sized GaN body monocrystal material, current most of GaN epitaxy device (as Sapphire Substrate) can only carry out heteroepitaxial growth on other substrates.
P type island region manufactures the requisite important step of GaN base LED component, and P-GaN structure and epitaxial growth method thereof are the keys improving GaN base LED light extraction efficiency.Owing to being difficult to form the good P type III-nitride material (such as GaN, AlGaN, InGaN, AlInGaN and AlInN) of conduction, in P-type layer the shortage of CURRENT DISTRIBUTION may become these materials form the limiting factor of LED performance.Therefore, the P-type layer surf zone as much as possible that we are desirably in exposure forms ohmic contact, thus directs current through region large as far as possible, this device active area.But, provide large positive contact to be harmful from some aspect to device performance.Usual expectation extracts light as much as possible from light-emitting diode.Because anode ohmic contact generally includes metal level, the light produced in LED active area partly can absorb in ohmic contact, reduces total luminous efficiency of this device.In some devices, the P-type layer that we are desirably in exposure forms reflective metal layer, make usually to be reflected back toward in auto levelizer from the light that device is escaped through P-type layer, be extracted through substrate.But such as aluminium is not formed with the high reflecting metal of silver and contacts with the good ohmic of P type nitride material.Therefore, usually between P type nitride layer and reflector, provide ohmic contact, the absorption reduced in ohmic contact becomes the problem be concerned about in these devices.Therefore, the method improved existing ohmic contact structure and form ohmic contact structure on P type nitride material is needed.
At present, the specific contact resistivity of the P-GaN of domestic main LED producer is all only 10
-2ohmcm
2the order of magnitude, this is because P-GaN hole concentration is too low and lack caused by the sufficiently high metal of work function, just can form good ohmic contact when only having P type GaN heavily doped.2000, document " JangJS; ParkSJ; SeongTYetal.LowresistanceandthermallystablePt/RuOhmiccon tactstop-typeGaN [J] .PhysicaStatusSolidi (A) AppliedResearch; 2000; 180 (1): 103-107 " relate to and adopts Pt/Ru and P-GaN contact, obtains low-resistance 2.2 × 10 through thermal annealing
-6ohmcm
2.The people such as Jin-KuoHo make contacting metal with Ni/Au, anneal 500 DEG C, obtain 4 × 10 under oxygen atmosphere
-6ohmcm
2contact gear ratio resistance (see document HoJK, JongCS, HuangCNetal.Low-resistanceohmiccontactstop-typeGaNachiev edbytheoxidationofNi/Aufilms [J] .Appl.Phys.Lett., 1999,86 (8): 4491-4497).The people such as Kumakura insert the strain InGaN contact layer of one deck 2nm between Pd/Au and P-GaN, quite low contact resistivity is just obtained (see document KumakuraK without any process, MakimotoT, KobayashiN.Kobayashi.Low-resistancenonalloyedohmiccontac ttoP-typeGaNusingstrainedInGaNcontactlayer [J] .Appl.Phys.Lett.2001,79 (16): 2588-2590).
For how to improve ohmic contact, there are some patent documentations both at home and abroad.Chinese patent literature CN102324455A disclosed " the ultra-thin ohmic contact and forming method thereof for P type nitride-based light emitting device ", provide a kind of semiconductor-based light-emitting device (LED), the metal ohmic contact in P type nitride layer and this p-type nitride layer can be comprised.This metal ohmic contact average thickness is about less than ohmic contact resistance (10
-3ohmcm
2).Deposition rate is about per second
arrive
under the measurement wavelength of about 350nm, be enough to provide the normalized transmissivity being about greater than 98%, to be provided for the metal level with the first average thickness of metal ohmic contact, and it is monitored to accompany the thickness of this metal level on sheet to indicate.If this instruction is higher than predetermined instruction threshold value, then further with subsequent time intervals or subsequent rate plated metal to increase average thickness.But the method is its thickness wayward in deposition process.
Chinese patent literature CN101183642A disclosed " a kind of preparation method of P-GaN low-resistance Ohm contact ", P-GaN structure grows the P-InGaN/P-AlGaN superlattice layer in 5 cycles, on grow P-InGaN cap rock, result shows that adopting p-InGaN/p-AlGaN superlattice to make top layer can obtain lower specific contact resistivity.In these superlattice there is strain compensation effect in P-InGaN and P-AlGaN, can improve material surface quality, improve the quality of P-GaN film, but hole concentration is comparatively difficult to ensure card.
Surface texture technology is the geometric figure changing GaN and air contact surfaces, improves electronic device luminous efficiency from another point of view.Disclosed in Chinese patent literature CN101521258A " a kind of method improving LED external quantum efficiency ", this method provide a kind of method of roughening, be the Mg doping content by improving surperficial P type GaN, thus reach the object of surface coarsening.But the method uses the method for heavily doped Mg to carry out alligatoring can make reative cell there is the memory effect of Mg atom, shortens the maintenance period of MOCVD device, be unfavorable for the stability of producing.
Chinese patent literature CN102789976A disclosed " a kind of manufacture method of GaN base LED chip ", comprises step: provide a GaN base LED; Clean described GaN base LED, and be dried; At described epitaxial wafer P-GaN deposited on silicon one gallium room inducing layer; Aforementioned GaN base LED is annealed; Remove the gallium room inducing layer on described GaN base LED surface; GaN base LED through above process makes P type ohmic contact layer and P, N electrode.Compared with conventional LED chips manufacture method, the low 0.2V of the chip voltage that the method process obtains, brightness does not have difference.
Summary of the invention
The deficiencies such as the P type GaN ohmic contact resistance existed according to existing LED technology is large, light extraction efficiency is low, the invention provides one and can reduce contact resistance, improve P type GaN film quality, improve the LED with N-type AlInGaN contact layer of light extraction efficiency, the preparation method of this LED a kind of is provided simultaneously.
The LED with N-type AlInGaN contact layer of the present invention, adopts following technical scheme:
This LED, comprises substrate, nucleating layer, resilient coating, N-type GaN layer, multiple quantum well light emitting layer and P type structure from the bottom to top successively; P type structure is P type AlGaN layer, P type GaN layer and N-type AlInGaN contact layer.
Described nucleating layer is gallium nitride layer, one of aln layer or gallium nitride layer, and the thickness of gallium nitride layer is 15-600nm; The thickness of aluminium nitride or aluminum gallium nitride is 30-200nm.
Described resilient coating is undoped GaN layer, and thickness is 0.1-3 μm.
Described N-type GaN layer thickness is 0.3-2.5 μm.
Described multiple quantum well light emitting layer is superposed alternately by the InGaN potential well layer in 12-43 cycle and GaN barrier layer to form, and gross thickness is 210-301nm, and in the single cycle, the thickness of InGaN potential well layer is the thickness of 2-3.5nm, GaN barrier layer is 5-14nm.
In described P type AlGaN layer, Mg doping content is 3 × 10
18/ cm
-3-8 × 10
19/ cm
-3.
In described P type GaN layer, Mg doping content is 4.5 × 10
19/ cm
-3-8 × 10
19/ cm
-3.
The thickness of described N-type AlInGaN contact layer is 2-800nm.
The above-mentioned preparation method with the LED of N-type AlInGaN contact layer, comprises the following steps:
(1) in the reative cell of metal-organic chemical vapor deposition equipment (MOCVD) equipment, put into sapphire or silicon carbide substrates, be heated to 1000-1500 DEG C in a hydrogen atmosphere, process 5-30 minute;
(2) growing gallium nitride, aluminium nitride or aluminum gallium nitride nucleating layer on the sapphire processed or silicon carbide substrates;
(3) on nucleating layer, grow undoped GaN layer (resilient coating), undoped GaN layer grows N-type GaN layer, N-type GaN layer grows multiple quantum well light emitting layer;
(4) growing P-type structure on multiple quantum well light emitting layer, specifically growing P-type AlGaN layer on multiple quantum well light emitting layer, growth P-type GaN layer in P type AlGaN layer, P type GaN layer grows N-type AlInGaN contact layer; Wherein the growth course of N-type AlInGaN contact layer is:
Growth temperature be 200-1200 DEG C, under pressure is the environment of 120-800mbar, open Al source, Al source flux is 16-104sccm; Before Al source passes into, simultaneously or afterwards, open In source, In source initial flow is 50-800cc, and this layer growth time is 20 seconds-600 seconds, and doping concentration is 0.1 × 10
19/ cm
-3-3.5 × 10
20/ cm
-3; In source flux variable quantity per second is 0.3-100sccm (variable quantity refers to the step-length of this numerical value change, can increase with the speed of 0.3-100sccm per second, also can reduce with the speed of 0.3-100sccm per second), and it is 20 seconds-600 seconds that In source passes into the time; Like this along with the speed of In source flux constantly changes the N-type AlInGaN contact layer obtaining In content gradually variational.
In described step (2), gallium nitride nucleating layer growth temperature 440-800 DEG C; The growth temperature of aluminium nitride and aluminum gallium nitride nucleating layer is 600-1250 DEG C.
In described step (3), the growth temperature of undoped GaN layer is 1000-1200 DEG C; N-type GaN layer growth temperature is 1000-1405 DEG C.
In described step (4), the growth temperature of P type AlGaN layer is 500-900 DEG C; The growth temperature of P type GaN layer is 800-1200 DEG C.
N-type AlInGaN contact layer structure of the present invention, for the preparation of gallium nitride based light emitting diode.Each grown layer in the present invention is metal-organic chemical vapor deposition equipment (MOCVD) epitaxially grown layer.
The present invention utilizes the regular change of In doping in N-type AlInGaN contact layer, what change N-type AlInGaN layer can be with distribution, the barrier effect when valence band reducing N-type AlInGaN layer is injected hole, do not weaken its barrier effect to electronics simultaneously, can improve surface coarsening to a certain extent, the ohmic contact of LED chip reduces 5%-10%.
The present invention can improve N-type GaN structure hole concentration, thus promotes external quantum efficiency, and gained N-type contact layer superlattice structure lattice mismatch is little, inherently reduces contact resistance, improves P type GaN film quality, improves light extraction efficiency.
Accompanying drawing explanation
Fig. 1 is the LED structure schematic diagram that the present invention has N-type AlInGaN form touch layer.
In figure: 1, substrate, 2, nucleating layer, 3, resilient coating, 4, N-type GaN layer, 5, multiple quantum well light emitting layer, 6, P type AlGaN layer, 7, P type GaN layer, 8, N-type AlInGaN contact layer.
Embodiment
Embodiment 1
The LED with N-type AlInGaN contact layer of the present invention as shown in Figure 1, comprise substrate 1, nucleating layer 2, resilient coating 3, N-type GaN layer 4, multiple quantum well light emitting layer 5 and P type structure from the bottom to top successively, P type structure is P type AlGaN layer 6, P type GaN layer 7 and N-type AlInGaN contact layer 8.
In the present embodiment, substrate 1 is silicon carbide substrates.Nucleating layer 2 is aln layer, and thickness is 30nm.Resilient coating 3 is undoped GaN layer, and thickness is 2 μm.The thickness of N-type GaN layer 4 is 2 μm.Multiple quantum well light emitting layer 5 is superposed alternately by the InGaN potential well layer in 15 cycles and GaN barrier layer to form, gross thickness 225nm, and in the single cycle, the thickness of InGaN potential well layer is the thickness of 3nm, GaN barrier layer is 12nm.Mg doping content 6.5 × 10 in P type AlGaN layer 6
18/ cm
-3.Mg doping content 5.5 × 10 in P type GaN layer 7
19/ cm
-3.The thickness of N-type AlInGaN contact layer 8 is 30nm.
The above-mentioned preparation process with the LED of N-type AlInGaN contact layer, specifically comprises the following steps:
(1) in the reative cell of metal-organic chemical vapor deposition equipment (MOCVD) equipment, put into sapphire or silicon carbide substrates, be heated to 1200 DEG C in a hydrogen atmosphere, process 20 minutes;
(2) growing aluminum nitride nucleating layer 2 in silicon carbide substrates 1, growth temperature is 950 DEG C, thickness 30nm, and growth pressure is 50mbar;
(3) on aln nucleation layer 2, grow undoped GaN resilient coating 3, growth temperature is 1100 DEG C, and growth thickness is 2 μm, and growth rate is 1.9 μm/h;
(4) on undoped GaN resilient coating 3, grow N-type GaN layer 4, thickness is 2 μm, and growth temperature is 1250 DEG C;
(5) in N-type GaN layer 4, grow multiple quantum well light emitting layer 5, gross thickness 225nm, wherein, potential well layer is InGaN material, and barrier layer is GaN material, and growth temperature is 800 DEG C, and Multiple Quantum Well growth cycle is 15; In the single cycle, the thickness of InGaN potential well layer is the thickness of 3nm, GaN barrier layer is 12nm.
(6) growing P-type AlGaN layer 6 on multiple quantum well light emitting layer 5, growth temperature is 550 DEG C, Mg doping content 6.5 × 10
18/ cm
-3.
(7) growth P-type GaN layer 7 in P type AlGaN layer 6, growth temperature is 1000 DEG C, Mg doping content 5.5 × 10
19/ cm
-3;
(8) in P type GaN layer 7, grow N-type AlInGaN contact layer 8, reaction chamber temperature is 600 DEG C, pressure 120mbar, and growth time is 100s, and doping concentration is 1 × 10
19/ cm
-3; Open Al source, Al source flux is 35sccm, and the time is 100 seconds; Open In source while opening Al source, initial In source flux is that 0, In source flux increase 0.3sccm, In per second source passes into 100 seconds time, obtains the N-type AlInGaN contact layer that one group of thickness is the In content gradually variational of 30nm.
The nurse contact adopting the LED of structure of the present invention to compare traditional LED reduces 10%.
Embodiment 2
In the present embodiment, substrate 1 is Sapphire Substrate.Nucleating layer 2 is gallium nitride layer, and thickness is 120nm.Resilient coating 3 is undoped GaN layer, and thickness is 1.8 μm.The thickness of N-type GaN layer 4 is 2.5 μm.Multiple quantum well light emitting layer 5 is superposed alternately by the InGaN potential well layer in 18 cycles and GaN barrier layer to form, and gross thickness is 270nm, and in the single cycle, the thickness of InGaN potential well layer is the thickness of 2nm, GaN barrier layer is 14nm.Mg doping content 9.8 × 10 in P type AlGaN layer 6
18/ cm
-3.Mg doping content 8 × 10 in P type GaN layer 7
19/ cm
-3.The thickness of N-type AlInGaN contact layer 8 is 80nm.
The above-mentioned preparation process with the LED of N-type AlInGaN contact layer, specifically comprises the following steps:
(1) in the reative cell of metal-organic chemical vapor deposition equipment (MOCVD) equipment, put into Sapphire Substrate, be heated to 1100 DEG C in a hydrogen atmosphere, process 25 minutes;
(2) in silicon carbide substrates 1, grow aluminum gallium nitride nucleating layer 2, growth temperature is 600 DEG C, thickness 120nm, and growth pressure is 500mbar;
(3) on aluminum gallium nitride nucleating layer 2, grow undoped GaN resilient coating 3, growth temperature is 1100 DEG C, and growth thickness is 1.8 μm, and growth rate is 2 μm/h;
(4) on undoped GaN resilient coating 3, grow N-type GaN layer 4, thickness is 2.5 μm, and growth temperature is 1405 DEG C;
(5) in N-type GaN layer 4, grow multiple quantum well light emitting layer 5, gross thickness is 270nm, and wherein, potential well layer is InGaN material, and barrier layer is GaN material, and growth temperature is 750 DEG C, and Multiple Quantum Well growth cycle is 18; In the single cycle, the thickness of InGaN potential well layer is the thickness of 2nm, GaN barrier layer is 14nm.
(6) growing P-type AlGaN layer 6 on multiple quantum well light emitting layer 5, growth temperature is 600 DEG C, Mg doping content 9.8 × 10
18/ cm
-3.
(7) growth P-type GaN layer 7 in P type AlGaN layer 6, growth temperature is 1200 DEG C, Mg doping content 8 × 10
19/ cm
-3;
(8) in P type GaN layer 7, grow N-type AlInGaN contact layer 8, reaction chamber temperature is 950 DEG C, pressure 200torr, and growth time is 300s, and doping concentration is 0.6 × 10
19/ cm
-3; Open Al source, Al source flux is 70sccm, and the time is 300s; After passing into Al source 100s, open In source, initial In source flux is that 10sccm, In source flux increase 1sccm, In per second source passes into time 200s, obtains the N-type AlInGaN contact layer that one group of thickness is the In content gradually variational of 80nm.
The nurse contact adopting the LED of structure of the present invention to compare traditional LED reduces 5%.
Embodiment 3
In the present embodiment, substrate 1 is Sapphire Substrate.Nucleating layer 2 is gallium nitride layer, and thickness is 600nm.Resilient coating 3 is undoped GaN layer, and thickness is 1.5 μm.The thickness of N-type GaN layer 4 is 1.5 μm.Multiple quantum well light emitting layer 5 is superposed alternately by the InGaN potential well layer in 12 cycles and GaN barrier layer to form, and gross thickness is 210nm, and in the single cycle, the thickness of InGaN potential well layer is the thickness of 3.5nm, GaN barrier layer is 14nm.Mg doping content 1.2 × 10 in P type AlGaN layer 6
18/ cm
-3.Mg doping content 5 × 10 in P type GaN layer 7
19/ cm
-3.The thickness of N-type AlInGaN contact layer 8 is 2nm.
The above-mentioned preparation process with the LED of N-type AlInGaN contact layer, specifically comprises the following steps:
(1) in the reative cell of metal-organic chemical vapor deposition equipment (MOCVD) equipment, put into Sapphire Substrate, be heated to 1300 DEG C in a hydrogen atmosphere, process 10 minutes;
(2) growing gallium nitride nucleating layer 2 in silicon carbide substrates 1, growth temperature is 670 DEG C, thickness 600nm, and growth pressure is 400mbar;
(3) on gallium nitride nucleating layer 2, grow undoped GaN resilient coating 3, growth temperature is 1050 DEG C, and growth thickness is 1.5 μm, and growth rate is 2.3 μm/h;
(4) on undoped GaN resilient coating 3, grow N-type GaN layer 4, thickness is 1.5 μm, and growth temperature is 1200 DEG C;
(5) in N-type GaN layer 4, grow multiple quantum well light emitting layer 5, gross thickness is 210nm, and wherein, potential well layer is InGaN material, and barrier layer is GaN material, and growth temperature is 690 DEG C, and Multiple Quantum Well growth cycle is 12; In the single cycle, the thickness of InGaN potential well layer is the thickness of 3.5nm, GaN barrier layer is 14nm.
(6) growing P-type AlGaN layer 6 on multiple quantum well light emitting layer 5, growth temperature is 750 DEG C, Mg doping content 1.2 × 10
19/ cm
-3.
(7) growth P-type GaN layer 7 in P type AlGaN layer 6, growth temperature is 1150 DEG C, Mg doping content 5 × 10
19/ cm
-3;
(8) in P type GaN layer 7, grow N-type AlInGaN contact layer 8, reaction chamber temperature is 200 DEG C, pressure 800mbar, and growth time is 20 seconds, and doping concentration is 0.1 × 10
19/ cm
-3; Open Al source, Al source flux is 16, and the time is 20 seconds; After Al source passes into 50s, open In source, initial In source flux is 25sccm, during front 100s, and In source flux increase per second 5sccm; After In flow reaches 525sccm, In source flux minimizing per second 5sccm, time remaining 50s, obtain the N-type AlInGaN contact layer that one group of thickness is the In content gradually variational of 2nm.
The nurse contact adopting the LED of structure of the present invention to compare traditional LED reduces 10%.
Embodiment 4
The present embodiment.Substrate 1 is silicon carbide substrates.Nucleating layer 2 is gallium nitride layer, and thickness is 200nm.Resilient coating 3 is undoped GaN layer, and thickness is 0.1 μm.The thickness of N-type GaN layer 4 is 1 μm.Multiple quantum well light emitting layer 5 is superposed alternately by the InGaN potential well layer in 43 cycles and GaN barrier layer to form, and gross thickness is 301nm, and in the single cycle, the thickness of InGaN potential well layer is the thickness of 2nm, GaN barrier layer is 5nm.Mg doping content 3 × 10 in P type AlGaN layer 6
18/ cm
-3.Mg doping content 4.5 × 10 in P type GaN layer 7
19/ cm
-3.The thickness of N-type AlInGaN contact layer 8 is 200nm.
The above-mentioned preparation process with the LED of N-type AlInGaN contact layer, specifically comprises the following steps:
(1) in the reative cell of metal-organic chemical vapor deposition equipment (MOCVD) equipment, put into sapphire or silicon carbide substrates, be heated to 1500 DEG C in a hydrogen atmosphere, process 5 minutes;
(2) in silicon carbide substrates 1, grow aluminum gallium nitride nucleating layer 2, growth temperature is 1250 DEG C, thickness 200nm, and growth pressure is 300mbar;
(3) on aln nucleation layer 2, grow undoped GaN resilient coating 3, growth temperature is 1000 DEG C, and growth thickness is 0.1 μm, and growth rate is 1.5 μm/h;
(4) on undoped GaN resilient coating 3, grow N-type GaN layer 4, thickness is 1 μm, and growth temperature is 1200 DEG C;
(5) in N-type GaN layer 4, grow multiple quantum well light emitting layer 5, gross thickness is 300nm, and wherein, potential well layer is InGaN material, and barrier layer is GaN material, and growth temperature is 800 DEG C, and Multiple Quantum Well growth cycle is 43; In the single cycle, the thickness of InGaN potential well layer is the thickness of 2nm, GaN barrier layer is 5nm.
(6) growing P-type AlGaN layer 6 on multiple quantum well light emitting layer 5, growth temperature is 500 DEG C, Mg doping content 3 × 10
18/ cm
-3.
(7) growth P-type GaN layer 7 in P type AlGaN layer 6, growth temperature is 800 DEG C, Mg doping content 4.5 × 10
19/ cm
-3;
(8) in P type GaN layer 7, grow N-type AlInGaN contact layer 8, reaction chamber temperature is 900 DEG C, pressure 200mbar, and growth time is 400 seconds, and doping concentration is 1 × 10
19/ cm
-3; Open Al source, Al source flux is 40sccm, and the time is 400 seconds; Open In source while opening Al source, initial In source flux is that 100cc, In source flux increase 20sccm, In per second source passes into 400 seconds time, obtains the N-type AlInGaN contact layer that one group of thickness is the In content gradually variational of 200nm.
Embodiment 5
In the present embodiment, substrate 1 is silicon carbide substrates.Nucleating layer 2 is gallium nitride layer, and thickness is 15nm.Resilient coating 3 is undoped GaN layer, and thickness is 3 μm.The thickness of N-type GaN layer 4 is 0.5 μm.Multiple quantum well light emitting layer 5 is superposed alternately by the InGaN potential well layer in 35 cycles and GaN barrier layer to form, and gross thickness is 297.5nm, and in the single cycle, the thickness of InGaN potential well layer is the thickness of 2.5nm, GaN barrier layer is 6nm.Mg doping content 8 × 10 in P type AlGaN layer 6
19/ cm
-3.Mg doping content 6 × 10 in P type GaN layer 7
19/ cm
-3.The thickness of N-type AlInGaN contact layer 8 is 500nm.
The above-mentioned preparation process with the LED of N-type AlInGaN contact layer, specifically comprises the following steps:
(1) in the reative cell of metal-organic chemical vapor deposition equipment (MOCVD) equipment, put into sapphire or silicon carbide substrates, be heated to 1100 DEG C in a hydrogen atmosphere, process 20 minutes;
(2) growing gallium nitride nucleating layer 2 in silicon carbide substrates 1, growth temperature is 440 DEG C, thickness 15nm, and growth pressure is 200mbar;
(3) on gallium nitride nucleating layer 2, grow undoped GaN resilient coating 3, growth temperature is 1200 DEG C, and growth thickness is 3 μm, and growth rate is 3 μm/h;
(4) on undoped GaN resilient coating 3, grow N-type GaN layer 4, thickness is 0.5 μm, and growth temperature is 1050 DEG C;
(5) in N-type GaN layer 4, grow multiple quantum well light emitting layer 5, gross thickness is 297.5nm, and wherein, potential well layer is InGaN material, and barrier layer is GaN material, and growth temperature is 800 DEG C, and Multiple Quantum Well growth cycle is 35; In the single cycle, the thickness of InGaN potential well layer is the thickness of 2.5nm, GaN barrier layer is 6nm.
(6) growing P-type AlGaN layer 6 on multiple quantum well light emitting layer 5, growth temperature is 900 DEG C, Mg doping content 8 × 10
19/ cm
-3.
(7) growth P-type GaN layer 7 in P type AlGaN layer 6, growth temperature is 1000 DEG C, Mg doping content 6 × 10
19/ cm
-3;
(8) in P type GaN layer 7, grow N-type AlInGaN contact layer 8, reaction chamber temperature is 1100 DEG C, pressure 500mbar, and growth time is 500 seconds, and doping concentration is 2 × 10
19/ cm
-3; Open Al source, Al source flux is 80sccm, and the time is 500 seconds; Open In source while opening Al source, initial In source flux is that 500cc, In source flux increase 50sccm, In per second source passes into 500 seconds time, obtains the N-type AlInGaN contact layer that one group of thickness is the In content gradually variational of 500nm.
Embodiment 6
In the present embodiment, substrate 1 is silicon carbide substrates.Nucleating layer 2 is gallium nitride layer, and thickness is 300nm.Resilient coating 3 is undoped GaN layer, and thickness is 1 μm.The thickness of N-type GaN layer 4 is 0.3 μm.Multiple quantum well light emitting layer 5 is superposed alternately by the InGaN potential well layer in 25 cycles and GaN barrier layer to form, and gross thickness is 275nm, and in the single cycle, the thickness of InGaN potential well layer is the thickness of 2nm, GaN barrier layer is 9.Mg doping content 5 × 10 in P type AlGaN layer 6
19/ cm
-3.Mg doping content 7 × 10 in P type GaN layer 7
19/ cm
-3.The thickness of N-type AlInGaN contact layer 8 is 800nm.
The above-mentioned preparation process with the LED of N-type AlInGaN contact layer, specifically comprises the following steps:
(1) in the reative cell of metal-organic chemical vapor deposition equipment (MOCVD) equipment, put into sapphire or silicon carbide substrates, be heated to 1000 DEG C in a hydrogen atmosphere, process 30 minutes;
(2) growing gallium nitride nucleating layer 2 in silicon carbide substrates 1, growth temperature is 800 DEG C, thickness 300nm, and growth pressure is 350mbar;
(3) on gallium nitride nucleating layer 2, grow undoped GaN resilient coating 3, growth temperature is 1150 DEG C, and growth thickness is 1 μm, and growth rate is 1 μm/h;
(4) on undoped GaN resilient coating 3, grow N-type GaN layer 4, thickness is 0.3 μm, and growth temperature is 1000 DEG C;
(5) in N-type GaN layer 4, multiple quantum well light emitting layer 5 is grown, gross thickness is 161.5nm, wherein, potential well layer is InGaN material, barrier layer is GaN material, and growth temperature is 800 DEG C, and multiple quantum well light emitting layer 5 is superposed alternately by the InGaN potential well layer in 25 cycles and GaN barrier layer to form, in the single cycle, the thickness of InGaN potential well layer is the thickness of 2nm, GaN barrier layer is 9.
(6) growing P-type AlGaN layer 6 on multiple quantum well light emitting layer 5, growth temperature is 850 DEG C, Mg doping content 5 × 10
19/ cm
-3.
(7) growth P-type GaN layer 7 in P type AlGaN layer 6, growth temperature is 1100 DEG C, Mg doping content 7 × 10
19/ cm
-3;
(8) in P type GaN layer 7, grow N-type AlInGaN contact layer 8, reaction chamber temperature is 1200 DEG C, pressure 800mbar, and growth time is 600 seconds, and doping concentration is 3.5 × 10
20/ cm
-3; Open Al source, Al source flux is 104sccm, and the time is 600 seconds; Open In source while opening Al source, initial In source flux is that 800cc, In source flux increase 100sccm, In per second source passes into 600 seconds time, obtains the N-type AlInGaN contact layer that one group of thickness is the In content gradually variational of 800nm.
Claims (10)
1. there is a LED for N-type AlInGaN contact layer, it is characterized in that, comprise substrate, nucleating layer, resilient coating, N-type GaN layer, multiple quantum well light emitting layer and P type structure from the bottom to top successively; P type structure is P type AlGaN layer, P type GaN layer and N-type AlInGaN contact layer.
2. the LED with N-type AlInGaN contact layer according to claim 1, is characterized in that, described nucleating layer is gallium nitride layer, one of aln layer or gallium nitride layer, and the thickness of gallium nitride layer is 15-600nm; The thickness of aluminium nitride or aluminum gallium nitride is 30-200nm.
3. the LED with N-type AlInGaN contact layer according to claim 1, is characterized in that, described resilient coating is undoped GaN layer, and thickness is 0.1-3 μm.
4. the LED with N-type AlInGaN contact layer according to claim 1, is characterized in that, described N-type GaN layer thickness is 0.3-2.5 μm.
5. the LED with N-type AlInGaN contact layer according to claim 1, it is characterized in that, described multiple quantum well light emitting layer is superposed alternately by the InGaN potential well layer in 12-43 cycle and GaN barrier layer to form, gross thickness is 210-301nm, in the single cycle, the thickness of InGaN potential well layer is the thickness of 2-3.5nm, GaN barrier layer is 5-14nm.
6. the LED with N-type AlInGaN contact layer according to claim 1, is characterized in that, the thickness of described N-type AlInGaN contact layer is 2-800nm.
7. a preparation method with the LED of N-type AlInGaN contact layer according to claim 1, is characterized in that, comprise the following steps:
(1) in the reative cell of metal-organic chemical vapor deposition equipment, put into sapphire or silicon carbide substrates, be heated to 1000-1500 DEG C in a hydrogen atmosphere, process 5-30 minute;
(2) growing gallium nitride, aluminium nitride or aluminum gallium nitride nucleating layer on the sapphire processed or silicon carbide substrates;
(3) on nucleating layer, grow undoped GaN layer, undoped GaN layer grows N-type GaN layer, N-type GaN layer grows multiple quantum well light emitting layer;
(4) growing P-type structure on multiple quantum well light emitting layer, specifically growing P-type AlGaN layer on multiple quantum well light emitting layer, growth P-type GaN layer in P type AlGaN layer, P type GaN layer grows N-type AlInGaN contact layer; Wherein the growth course of N-type AlInGaN contact layer is:
Growth temperature be 200-1200 DEG C, under pressure is the environment of 120-800mbar, open Al source, Al source flux is 16-104sccm; Before Al source passes into, simultaneously or afterwards, open In source, In source initial flow is 50-800cc, and this layer growth time is 20 seconds-600 seconds, and doping concentration is 0.1 × 10
19/ cm
-3-3.5 × 10
20/ cm
-3; In source flux variable quantity per second is that to pass into the time be 20 seconds-600 seconds in 0.3-100sccm, In source; Like this along with the speed of In source flux constantly changes the N-type AlInGaN contact layer obtaining In content gradually variational.
8. the preparation method with the LED of N-type AlInGaN contact layer according to claim 7, is characterized in that, in described step (2), and gallium nitride nucleating layer growth temperature 440-800 DEG C; The growth temperature of aluminium nitride and aluminum gallium nitride nucleating layer is 600-1250 DEG C.
9. the preparation method with the LED of N-type AlInGaN contact layer according to claim 7, is characterized in that, in described step (3), the growth temperature of undoped GaN layer is 1000-1200 DEG C; N-type GaN layer growth temperature is 1000-1405 DEG C.
10. the preparation method with the LED of N-type AlInGaN contact layer according to claim 7, in described step (4), the growth temperature of P type AlGaN layer is 500-900 DEG C; The growth temperature of P type GaN layer is 800-1200 DEG C.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957936A (en) * | 2016-06-24 | 2016-09-21 | 太原理工大学 | DUV LED epitaxial wafer structure |
| CN105977355A (en) * | 2016-05-09 | 2016-09-28 | 华灿光电股份有限公司 | LED epitaxial wafer and preparation method thereof |
| CN108110097A (en) * | 2018-01-15 | 2018-06-01 | 中国科学院半导体研究所 | GaN base LED component and preparation method thereof |
| JP2020010019A (en) * | 2018-05-29 | 2020-01-16 | コミサリア ア レネルジ アトミク エ オウ エネルジ アルタナティヴ | MANUFACTURING METHOD OF GaN-BASED LIGHT-EMITTING DIODE |
| CN111640836A (en) * | 2020-06-18 | 2020-09-08 | 佛山紫熙慧众科技有限公司 | GaN-based LED device electrode structure and LED device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2593371Y (en) * | 2002-12-26 | 2003-12-17 | 炬鑫科技股份有限公司 | Gallium nitride based LED light-emitting apparatus |
| CN101044633A (en) * | 2004-10-19 | 2007-09-26 | Lg伊诺特有限公司 | Nitride semiconductor light emitting device and fabrication method therefor |
| CN103078018A (en) * | 2013-01-30 | 2013-05-01 | 武汉迪源光电科技有限公司 | Epitaxial structure of LED (Light Emitting Diode) |
| CN104409587A (en) * | 2014-10-22 | 2015-03-11 | 太原理工大学 | An InGaN-based blue-green light-emitting diode epitaxial structure and growth method |
-
2015
- 2015-07-29 CN CN201510455065.XA patent/CN105161592A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2593371Y (en) * | 2002-12-26 | 2003-12-17 | 炬鑫科技股份有限公司 | Gallium nitride based LED light-emitting apparatus |
| CN101044633A (en) * | 2004-10-19 | 2007-09-26 | Lg伊诺特有限公司 | Nitride semiconductor light emitting device and fabrication method therefor |
| CN103078018A (en) * | 2013-01-30 | 2013-05-01 | 武汉迪源光电科技有限公司 | Epitaxial structure of LED (Light Emitting Diode) |
| CN104409587A (en) * | 2014-10-22 | 2015-03-11 | 太原理工大学 | An InGaN-based blue-green light-emitting diode epitaxial structure and growth method |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105977355A (en) * | 2016-05-09 | 2016-09-28 | 华灿光电股份有限公司 | LED epitaxial wafer and preparation method thereof |
| CN105957936A (en) * | 2016-06-24 | 2016-09-21 | 太原理工大学 | DUV LED epitaxial wafer structure |
| CN105957936B (en) * | 2016-06-24 | 2018-04-13 | 太原理工大学 | A kind of DUV LED epitaxial wafer structure |
| CN108110097A (en) * | 2018-01-15 | 2018-06-01 | 中国科学院半导体研究所 | GaN base LED component and preparation method thereof |
| JP2020010019A (en) * | 2018-05-29 | 2020-01-16 | コミサリア ア レネルジ アトミク エ オウ エネルジ アルタナティヴ | MANUFACTURING METHOD OF GaN-BASED LIGHT-EMITTING DIODE |
| JP7382156B2 (en) | 2018-05-29 | 2023-11-16 | コミサリア ア レネルジ アトミク エ オウ エネルジ アルタナティヴ | Method for manufacturing GaN-based light emitting diode |
| CN111640836A (en) * | 2020-06-18 | 2020-09-08 | 佛山紫熙慧众科技有限公司 | GaN-based LED device electrode structure and LED device |
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