CN105957936A - DUV LED epitaxial wafer structure - Google Patents

DUV LED epitaxial wafer structure Download PDF

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CN105957936A
CN105957936A CN201610466965.9A CN201610466965A CN105957936A CN 105957936 A CN105957936 A CN 105957936A CN 201610466965 A CN201610466965 A CN 201610466965A CN 105957936 A CN105957936 A CN 105957936A
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quantum well
epitaxial wafer
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CN105957936B (en
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卢太平
朱亚丹
周小润
许并社
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太原理工大学
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

The invention belongs to the field of photoelectronic devices, and particularly relates to a DUV LED epitaxial wafer structure. The DUV LED epitaxial wafer structure comprises a substrate, wherein the upper surface of the substrate is sequentially provided with a buffer layer, an n-AlGaN layer, a multi-quantum well light-emitting layer, a p-AlGaN layer and a p-GaN contact layer from bottom to top; the multi-quantum well light-emitting layer is formed by alternately stacking multiple pairs of well layers and barrier layers from bottom to top; the well layers are Al<x>Ga<1-x>N/Al<z>In<y>Ga<1-y-z>N/Al<x>Ga<1-x>N; x is smaller than or equal to 0.9 and greater than or equal to 0.6; the values of y and z meet the condition that E<g>(Al<z>In<y>Ga<1-y-z>N) is smaller than E<g>(Al<x>Ga<1-x>N); and the barrier layers are AlN. The relative positions of a heavy hole band, a light hole band and a crystalline field split hole band are adjusted by the structure that Al<z>In<y>Ga<1-y-z>N thin layers are inserted into the Al<x>G<1-x>N well layers; TE mode light is improved; and the ratio of TM mode light is reduced, so that the light-emitting efficiency of a DUV LED is improved.

Description

一种DUV LED外延片结构 DUV LED epitaxial wafer one kind of structure

技术领域 FIELD

[0001]本发明属于光电子器件领域,具体是一种DUV LED外延片结构。 [0001] The present invention belongs to the field of optoelectronic devices, in particular a DUV LED epitaxial wafer structure.

背景技术 Background technique

[0002]紫外发光二极管(LED)具有环保无毒、耗电低、体积小以及寿命长等优点,符合新时代下环保、节能等要求。 [0002] ultraviolet light emitting diode (LED) having a nontoxic, low power consumption, small size and long life, etc., environmentally friendly, energy requirements new era. AlGaN基LED发光波长可以覆盖210nm-360nm的范围,其中210nm-300nm属于深紫外波段。 AlGaN-based LED emission wavelength range of 210nm-360nm may cover, wherein part of 210nm-300nm DUV wavelength band. 深紫外LED在印刷、医疗、净化、侦查、数据存储以及照明等方面都有重大应用价值。 In the deep UV LED printing, medical, purification, detection, data storage, and lighting have a significant value.

[0003]与GaN基蓝光LED相比,波长短于300nm的深紫外LED的发光效率普遍较低。 [0003] Compared with GaN based blue LED, deep UV wavelength shorter than 300nm LED luminous efficiency is generally low. 随着AlGaN基LED发光波长逐渐变短,发光层AlGaN中的Al组分要随之增加,材料外延生长、掺杂、以及器件制作的难度也随之增大,光输出功率则逐渐降低。 AlGaN-based LED with an emission wavelength gradually becomes short, the light emitting layer to the Al composition of AlGaN increases, epitaxially grown material, doping, and the difficulty of device fabrication also increases the optical output power is decreased. 一方面,当Al组分高于0.5时,晶体场分裂空穴带取代重空穴带和轻空穴带成为价带顶,使得正面出光的光发射(TE模)迅速被侧面出光的光发射(TM模)所取代,这就根本上限制了光提取效率。 In one aspect, when the Al composition is higher than 0.5, the crystal field splitting hole band and light hole band unsubstituted heavy hole band is a light-emitting valence band, so that the front light (TE mode) rapidly out of the light incident surface of the light-emitting (TM mode) are substituted, which fundamentally limits the light extraction efficiency. 另一方面,随着Al组分的增加,施主/受主的激活能相应增加,使得P型掺杂激活率很低,室温下空穴浓度很低。 On the other hand, with the increase in Al composition, donor / acceptor activation energy corresponding increase in the main, so that the P-type dopant activation rate is very low, the low hole concentration at room temperature. Al组分高于0.5时,ρ-AlGaN中空穴浓度太低不能和电极之间形成良好的欧姆接触,为了降低P型欧姆接触电阻需要引入P-GaN帽层,但是p-GaN会吸收光子而降低发光效率。 When the Al composition is higher than 0.5, the hole concentration is too low and the ρ-AlGaN between the electrodes to form a good ohmic contact, in order to reduce P-type ohmic contact resistance is necessary to introduce P-GaN cap layer, the p-GaN will absorb photons decrease the luminous efficiency. 这也是高Al组分AlGaN LED采用底部发光的倒装结构的原因。 This is why the structure of the bottom emission flip high Al content AlGaN LED employed. 而传统的图形化衬底,表面粗化,减反射层,尚反光镜等技术在提尚深紫外LED光提取效率方面效果有限。 The traditional patterning a substrate, roughening the surface, the antireflection layer, still other mirror technology still provide limited deep ultraviolet LED light extraction efficiency results.

发明内容 SUMMARY

[0004] 本发明为了提高DUV LED的发光效率,提供了一种DUV LED外延片结构。 [0004] The present invention is to improve the emission efficiency of DUV LED, there is provided a sheet DUV LED epitaxial structure.

[0005]本发明是通过以下技术方案实现的:一种DUV LED外延片结构,包括衬底,所述衬底上表面从下至上依次为缓冲层、n-AlGaN层、多量子阱发光层、p-AlGaN层以及p-GaN接触层;所述多量子阱发光层是由若干对阱层和皇层依次从下向上交替堆叠组成的,该阱层为AlxGa1-XN/A1 JnyGa1-y—zN/AlxGai—XN,其中0.6 兰x 兰0.9,y和z 的取值要满足Eg(Al JnyGa1-y—ZN)< Eg(AlxGai—xN),皇层为AIN;所述阱层中Al JnyGai—y—zN层的厚度为0.3〜2nm,讲层的厚度小于皇层的厚度。 [0005] The present invention is achieved by the following technical solutions: A DUV LED epitaxial wafer structure comprising a substrate upper surface from bottom to top of a buffer layer, n-AlGaN layer, a multiple quantum well light emitting layers, p-AlGaN layer and a p-GaN contact layer; the multiple quantum well light emitting layer is composed of several layers of well layer and Huang upwardly from bottom alternately stacked composition, the well layer is an AlxGa1-XN / A1 JnyGa1-y-zN / AlxGai-XN, where x blue blue 0.6 0.9, y and z values ​​to satisfy Eg (Al JnyGa1-y-ZN) <Eg (AlxGai-xN), Huang AIN layer; the well layer Al JnyGai- the thickness y-zN layer 0.3~2nm, speaking layer thickness less than Huang layer.

[0006]本发明技术方案中采用在AlxGahN阱层中插入有AlzInyGa1-y-zN薄层的结构,来调控重空穴带、轻空穴带、晶体场劈裂空穴带的相对位置,X值主要是调控发光波长的,使目标波长位于深紫外的区间。 [0006] aspect of the present invention is employed in a structure in insertion AlzInyGa1-y-zN thin layer AlxGahN well layer, to regulate heavy hole band and light hole band, the relative position of the crystal field splitting of the hole band, X value primarily regulated emission wavelength range outside the target wavelength is deep ultraviolet. 薄层结构厚度太大会使得AlzInyGamN插入层充当量子阱的角色,使得非目标波长的发光峰出现以及波谱展宽,而削弱目标波长的发光峰,厚度太小不易控制,而且起不到相应的作用。 Too large thickness of the structure such that the thin intervening layer AlzInyGamN act as a quantum well, such that non-target emission peak wavelength and spectrum spreading occurs, and the emission peak wavelength weakened target, difficult to control the thickness is too small, and will not achieve a corresponding effect.

[0007]优选的,所述讲层中两层AIxGa1-xN层的总的厚度为2〜5nm,皇层的厚度为5〜20nmo [0007] Preferably, the layer of the two layers of AIxGa1-xN layer total thickness speaking 2~5nm, the thickness of the layer was Huang 5~20nmo

[0008]进一步,所述缓冲层为AlN缓冲层,或者是由AlN层和AlGaN/GaN超晶格组成的缓冲层。 [0008] Further, the AlN buffer layer is a buffer layer or a buffer layer and an AlN layer AlGaN / GaN superlattice thereof.

[0009]进一步,所述多量子阱发光层中阱层和皇层的周期数为1-20对。 [0009] Further, the multiple quantum well light emitting layers and the number of well layers is 1-20 cycles Huang layer pair.

[0010] 进一步,多量子阱发光层制备过程中AlxGa1-XN层的生长温度与AlzInyGa1-y—ZN层的生长温度相同,简化工艺避免升降温过程。 [0010] Further, a multiple quantum well light emitting layer was prepared during the same growth temperature AlxGa1-XN layer and AlzInyGa1-y-ZN layer, simplifying the process to avoid the heating and cooling process.

[0011] 本发明所述的DUV LED外延片结构,采用在AlxGa1-XN阱层中插入有AlzInyGa1HN薄层的结构,来调控重空穴带、轻空穴带、晶体场劈裂空穴带的相对位置,提高TE模光而降低TM模光的比例,从而提高DUV LED的发光效率。 [0011] DUV LED epitaxial wafer structure according to the present invention, a structure is inserted in a thin layer AlzInyGa1HN AlxGa1-XN well layer, to regulate heavy hole band and light hole band, the crystal field splitting hole band relative position, increase the proportion of TE mode light and TM mode light is reduced, thereby improving the luminous efficiency of DUV LED.

附图说明 BRIEF DESCRIPTION

[0012]图1为本发明提供的DUV LED的结构示意图(衬底为蓝宝石)。 [0012] FIG DUV LED 1 of the present invention provides a structure diagram (sapphire substrate). 当然,在一些实施例中也可采用其他衬底材料,如S1、SiC等。 Of course, in some embodiments, the substrate can be other materials, such as S1, SiC and the like.

[0013]图2为普通AlQ.8GaQ.2N/AlN结构量子阱的价带示意图。 [0013] FIG 2 is a general AlQ.8GaQ.2N / AlN valence band quantum well structure schematic. 如图所示,晶体场劈裂空穴带位于重空穴带和轻空穴带之上,意味着量子阱辐射复合产生的光分量主要是TM模的光,只有少部分的TE模光,也就是是说垂直于c面的光发射很少,不利于光的提取。 As shown, the crystal field splitting with the hole located on the heavy-hole band and light hole band, light components means that the quantum well is primarily radiative recombination of generated light in the TM mode, the TE mode light is only a small part, but also that is to say perpendicular to the c-plane light-emitting little light is not conducive to extraction.

[0014] 图3为本发明实施例1提供的AlxGa1-xN/AlzInyGai—y—zN/AlxGai—XN/A1N结构量子阱的价带示意图,x=0.8,y=z=0.05。 [0014] FIG. 3 provides a schematic view with the AlxGa1-xN AlzInyGai-y-zN AlxGai-XN A1N valence quantum well structure / / / embodiment of the present invention, x = 0.8, y = z = 0.05. 如图所示,在Al0.sGa0.2N中插入Al0.οδΐηο.0sGa0.9N薄层能够调控能带,使得重空穴带和轻空穴带位于晶体场劈裂带之上,意味着量子阱辐射复合产生的光分量主要是TE模的光,也就是提高了垂直于c面的光发射,有利于提高器件的发光效率。 As shown, the sheet can be inserted Al0.οδΐηο.0sGa0.9N regulation band, so that the heavy hole band and light hole band is located above the crystal field splitting Al0.sGa0.2N band, the quantum well means light components generated mainly radiative recombination TE mode light, i.e. increase the c-plane perpendicular to the light emission, help to improve the luminous efficiency of the device.

具体实施方式 Detailed ways

[0015] 实施例1 [0015] Example 1

一种DUV LED外延片结构,包括衬底,所述衬底上从下至上依次为AlN缓冲层、n-AlGaN层、多量子阱发光层、P-AlGaN层以及p-GaN接触层;所述多量子阱发光层是由I对阱层和皇层依次从下向上交替堆叠组成的,该阱层为六1{&1-^^1211^&1|4/^14&1-具其中1=0.8,y=z=0.05。 One kind DUV LED epitaxial wafer structure, including a substrate from bottom to top as AlN buffer layer, n-AlGaN layer, a multiple quantum well light emitting layer, P-AlGaN layer and a p-GaN contact layer; the a multiple quantum well light emitting layer is composed of I to the well layer and Huang layers are alternately upward from the stack composed of the well layer is a six-1 {& 1 - ^^ 1211 ^ & 1 | 4 / ^ 14 & 1- device wherein 1 = 0.8, y = z = 0.05. 皇层为AlN;所述讲层中AlzInyGa1-y—ZN层的厚度为0.8nm,两层AlxGa1-XN层的总的厚度为5nm,皇层的厚度为15nm。 Huang the AlN layer; the layer thickness speaking AlzInyGa1-y-ZN layer is 0.8nm, the total thickness of the two layers of AlxGa1-XN layer is 5nm, a thickness Huang layer was 15nm.

[0016] 实施例2 [0016] Example 2

一种DUV LED外延片结构,包括衬底,所述衬底上从下至上依次为由AlN层和AlGaN/GaN超晶格组成的缓冲层、n-AlGaN层、多量子阱发光层、p-AlGaN层以及p-GaN接触层;所述多量子阱发光层是由10对阱层和皇层依次从下向上交替堆叠组成的,该阱层为AlxGa^N/AlzInyGa1-y-zN/AlxGa1-xN,其中x=0.6,y=z=0,皇层为AlN ;所述讲层中AlzInyGa1-y—ZN 层的厚度为lnm,两层AlxGa1-XN层的总的厚度为3nm,皇层的厚度为1nm0 DUV LED epitaxial buffer layer of one piece structure, including a substrate sequentially from the bottom by the AlN layer and AlGaN / GaN superlattice composed, n-AlGaN layer, a multiple quantum well light emitting layer, p- AlGaN layer and a p-GaN contact layer; the multiple quantum well light emitting layer is composed of 10 pairs of well layers and Huang layer are stacked up alternately from the composition of the well layer is an AlxGa ^ N / AlzInyGa1-y-zN / AlxGa1- xN, where x = 0.6, y = z = 0, Huang the AlN layer; the layer thickness speaking AlzInyGa1-y-ZN layer was lnm, the total thickness of the two layers of AlxGa1-XN layer is 3nm, Huang layer thickness 1nm0

[0017] 实施例3 [0017] Example 3

一种DUV LED外延片结构,包括衬底,所述衬底上从下至上依次为AlN缓冲层、n-AlGaN层、多量子阱发光层、P-AlGaN层以及p-GaN接触层;所述多量子阱发光层是由20对阱层和皇层依次从下向上交替堆叠组成的,该阱层为六1{&1-^^1211^&1|4/^14&1-具其中1=0.9,7=0,2=0.05,皇层为六]^;所述讲层中41211^631—丫—4层的厚度为211111,两层41431—^'1层的总的厚度为2nm,皇层的厚度为5nm。 One kind DUV LED epitaxial wafer structure, including a substrate from bottom to top as AlN buffer layer, n-AlGaN layer, a multiple quantum well light emitting layer, P-AlGaN layer and a p-GaN contact layer; the a multiple quantum well light emitting layer is composed of 20 pairs of well layers and Huang layers are alternately upward from the stack composed of the well layer is a six-1 {& 1 - ^^ 1211 ^ & 1 | 4 / ^ 14 & 1- having 1 = 0.9,7 = 0.05 = 0,2, Huang six layer] ^; ^ the stresses 631- 41211 Ah layer thickness of 211 111 -4 layer, the two layers 41,431 - total thickness ^ '1 layer is 2nm, Huang layer a thickness of 5nm.

[0018] 实施例4 [0018] Example 4

一种DUV LED外延片结构,包括衬底,所述衬底上从下至上依次为AlN缓冲层、n-AlGaN层、多量子阱发光层、P-AlGaN层以及p-GaN接触层;所述多量子阱发光层是由20对阱层和皇层依次从下向上交替堆叠组成的,该阱层为六1{&1-^^1211^&1|4/^14&1-具其中1=0.8,y=0.1,ζ=0,皇层为AlN;所述讲层中AlzInyGa1-y—ZN层的厚度为0.3nm,两层AlxGa1-XN层的总的厚度为4nm,皇层的厚度为20nmo One kind DUV LED epitaxial wafer structure, including a substrate from bottom to top as AlN buffer layer, n-AlGaN layer, a multiple quantum well light emitting layer, P-AlGaN layer and a p-GaN contact layer; the a multiple quantum well light emitting layer is composed of 20 pairs of well layers and Huang layers are alternately upward from the stack composed of the well layer is a six-1 {& 1 - ^^ 1211 ^ & 1 | 4 / ^ 14 & 1- device wherein 1 = 0.8, y = 0.1, ζ = 0, Huang the AlN layer; the layer thickness speaking AlzInyGa1-y-ZN layer is 0.3nm, the total thickness of the two layers of AlxGa1-XN layer is 4nm, the thickness of the layer was Huang 20nmo

Claims (9)

1.一种DUV LED外延片结构,包括衬底,所述衬底上表面从下至上依次为缓冲层、n-AlGaN层、多量子阱发光层、P-AlGaN层以及p-GaN接触层;其特征在于,所述多量子阱发光层是由若干对讲层和皇层依次从下向上交替堆叠组成的,该讲层为AlxGa1-xN/AlzInyGa1-y-zN/AlxGapXN,其中0.6 刍X 刍0.9,y和z的取值要满足EgUlzInyGa1IzNK Eg(AlxGapxN),皇层为AlN;所述讲层中AlzInyGa1-y-zN层的厚度为0.3〜2nm,讲层的厚度小于皇层的厚度。 An epitaxial wafer DUV LED structure comprising a substrate upper surface from bottom to top of a buffer layer, n-AlGaN layer, a multiple quantum well light emitting layer, P-AlGaN layer and a p-GaN contact layer; wherein said multiple quantum well light emitting layer is composed of several layers and Huang intercom layers are alternately stacked upwardly from the composition, the layer is speaking AlxGa1-xN / AlzInyGa1-y-zN / AlxGapXN, wherein X 0.6 Chu Chu 0.9, y and z values ​​to satisfy EgUlzInyGa1IzNK Eg (AlxGapxN), Huang the AlN layer; the layer thickness speaking AlzInyGa1-y-zN layer 0.3~2nm, speaking layer has a thickness less than the thickness Huang layer.
2.根据权利要求1所述的一种DUV LED外延片结构,其特征在于,所述阱层中两层AlxGai—XN层总的厚度为2〜5nm,皇层的厚度为5〜20nm。 2. According to a DUV LED epitaxial wafer structure according to claim 1, wherein the total thickness of the well layer two AlxGai-XN layer 2~5nm, the thickness of the layer was Huang 5~20nm.
3.根据权利要求1或2所述的一种DUV LED外延片结构,其特征在于,所述缓冲层为AlN缓冲层,或者是由AlN层和AlGaN/GaN超晶格组成的缓冲层。 A sheet DUV LED epitaxial structure according to claim 12, wherein the AlN buffer layer is a buffer layer or a buffer layer and an AlN layer AlGaN / GaN superlattice thereof.
4.根据权利要求1或2所述的一种DUV LED外延片结构,其特征在于,所述多量子阱发光层中阱层和皇层的周期数为1-20对。 4. A sheet according to one DUV LED epitaxial structure according to claim 1, wherein the number of said multiple quantum well light-emitting layer and a well layer period of 1-20 Huang layer pair.
5.根据权利要求3所述的一种DUV LED外延片结构,其特征在于,所述多量子阱发光层中阱层和皇层的周期数为1-20对。 A DUV LED epitaxial wafer structure according to claim 3, wherein the number of said multiple quantum well light-emitting layer and a well layer period of 1-20 Huang layer pair.
6.根据权利要求1或2所述的一种DUV LED外延片结构,其特征在于,多量子阱发光层制备过程中AlxGapxN层的生长温度与AlzInyGa1-y-zN层的生长温度相同。 6. According to a structure or DUV LED epitaxial wafer according to claim 1, characterized in that, with the same growth temperature AlzInyGa1-y-zN layer AlxGapxN layer is a multiple quantum well light emitting layer preparation process.
7.根据权利要求3所述的一种DUV LED外延片结构,其特征在于,多量子阱发光层制备过程中AlxGapxN层的生长温度与AlzInyGa1-y-zN层的生长温度相同。 A DUV LED epitaxial wafer structure according to claim 3, characterized in that, with the same growth temperature AlzInyGa1-y-zN layer AlxGapxN layer is a multiple quantum well light emitting layer preparation process.
8.根据权利要求4所述的一种DUV LED外延片结构,其特征在于,多量子阱发光层制备过程中AlxGapxN层的生长温度与AlzInyGa1-y-zN层的生长温度相同。 A DUV LED epitaxial wafer structure according to claim 4, characterized in that, with the same growth temperature AlzInyGa1-y-zN layer AlxGapxN layer is a multiple quantum well light emitting layer preparation process.
9.根据权利要求5所述的一种DUV LED外延片结构,其特征在于,多量子阱发光层制备过程中AlxGapxN层的生长温度与AlzInyGa1-y-zN层的生长温度相同。 A DUV LED epitaxial wafer structure according to claim 5, characterized in that, with the same growth temperature AlzInyGa1-y-zN layer AlxGapxN layer is a multiple quantum well light emitting layer preparation process.
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