CN103078018A - Epitaxial structure of LED (Light Emitting Diode) - Google Patents
Epitaxial structure of LED (Light Emitting Diode) Download PDFInfo
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- CN103078018A CN103078018A CN2013100360110A CN201310036011A CN103078018A CN 103078018 A CN103078018 A CN 103078018A CN 2013100360110 A CN2013100360110 A CN 2013100360110A CN 201310036011 A CN201310036011 A CN 201310036011A CN 103078018 A CN103078018 A CN 103078018A
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Abstract
The invention relates to an epitaxial structure of an LED (Light Emitting Diode). The epitaxial structure comprises a substrate, a transition layer, a u-shaped gallium nitride layer, an n-shaped gallium nitride layer, a multiple-quantum-well layer, a p-shaped gallium nitride layer, an ITO (Indium Tin Oxide)-doped layer, a p-shaped electrode, an n-shaped electrode and a p-shaped contact layer, wherein the substrate, the transition layer, the u-shaped gallium nitride layer, the n-shaped gallium nitride layer, the multiple-quantum-well layer, the p-shaped gallium nitride layer, the ITO tin-doped indium oxide layer and the p-shaped electrode are sequentially overlapped, the n-shaped electrode is formed on the n-shaped gallium nitride layer, the p-shaped contact layer is located between the p-shaped gallium nitride layer and the ITO-doped layer and is of a wedge-shaped structure, the hole concentration of the p-shaped contact layer changes gradually, the hole concentration of one side of the p-shaped contact layer, close to the p-shaped gallium nitride layer, is high, and the hole concentration of one side of the p-shaped contact layer, away from the p-shaped gallium nitride layer, is low. The epitaxial structure of the LED, provided by the invention, has the advantages of simple structure, convenience in manufacture, and the like; and compared with the traditional structure, the efficiency and reliability of light emitting of the LED can be greatly improved.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to a kind of LED epitaxial structure.
Background technology
In recent years, III hi-nitride semiconductor material (AlN, GaN and InN) because its wider direct band gap, good calorifics and chemical stability and at solid-state illumination, solid state laser, the optical information storage, the microelectronics such as ultraviolet detector and opto-electronic device aspect have significant advantage, and obtained breakthrough progress in recent years research with in using, particularly under the background of energy resource supply and problem of environmental pollution, semiconductor illuminating light source has efficiently as a kind of, energy-conservation, environmental protection, long-life, easy cares etc. are the device of characteristic significantly, has attracted global sight.
The growth of epitaxial structure is the key technology of led chip, and how to improve the luminous efficiency of diode, is an important difficult point of epitaxial structure growth.Most of GaN base LED is the side direction structure in the market, the problem that all has the electric current distribution inequality, cause the LED light-emitting zone not to be fully used, its structure as shown in Figure 1, electric current distribution is uneven, can affect the corner light-emitting zone and be not fully utilized, reduce the luminous efficiency of light-emitting diode.
Summary of the invention
Technical problem to be solved by this invention is for the deficiencies in the prior art, and a kind of problem that can effectively solve LED electric current distribution inequality is provided, and can greatly improve the LED epitaxial structure of LED luminous efficiency.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of LED epitaxial structure, comprise the substrate that stacks gradually, transition zone, the u-shaped gallium nitride layer, the N-shaped gallium nitride layer, multiple quantum well layer, the p-type gallium nitride layer, ITO tin-doped indium oxide layer, p-type electrode and the N-shaped electrode that is formed on the N-shaped gallium nitride layer, also comprise the p-type contact layer, described p-type contact layer is between p-type gallium nitride layer and ITO tin-doped indium oxide layer, be and carve the type structure, and the hole concentration gradual change of p-type contact layer, survey hole concentration near one of p-type gallium nitride layer high, low away from p-type gallium nitride layer one side hole concentration.
On the basis of technique scheme, the present invention can also do following improvement.
Further, described p-type contact layer is by the Al of doped with Mg or Be
yIn
xGa
1-x-yThe semiconductor layer of N consists of, wherein 0≤x≤1,0≤y≤1,0≤x+y＜1.
Further, the doping content of described p-type contact layer is gradation type from the bottom to top successively, surveys concentration near one of p-type gallium nitride layer high, and is low away from a side concentration of p-type gallium nitride layer.
Further, the concentration range of described p-type contact layer doping is 1*10
17/ cm
3～9*10
22/ cm
3
Further, described p-type contact layer by carved the corrosion before the Thickness scope be 0.01～100 μ m.
The invention has the beneficial effects as follows: the present invention is by inserting the p-type contact layer, and the p-type contact layer is for carving the type structure, make its equivalent resistance be gradual change trend, this is so that when electric current injects, because the resistance of p-type contact layer is different, can be effectively balanced each regional current density takes full advantage of the effective recombination region of hole-electronics of luminescent layer, improves the whole lighting efficiency of LED; LED epitaxial structure of the present invention has the advantages such as simple in structure, easy to make, and relative traditional structure can improve luminous efficiency and the reliability of strong LED significantly.
Description of drawings
Fig. 1 is the schematic diagram of existing LED epitaxial structure and CURRENT DISTRIBUTION density thereof;
Fig. 2 is the schematic diagram of LED epitaxial structure of the present invention and CURRENT DISTRIBUTION density thereof;
Fig. 3,4,5,6 is the schematic diagram of the intermediate structure of LED epitaxial structure growth course of the present invention.
In the accompanying drawing, the list of parts of each label representative is as follows:
1, substrate, 2, transition zone, 3, the u-shaped gallium nitride layer, 4, the N-shaped gallium nitride layer, 5, multiple quantum well layer, 6, the p-type gallium nitride layer, 7, ITO tin-doped indium oxide layer, 8, the p-type electrode, 9, the N-shaped electrode, 10, the p-type contact layer, 11, photoresist, 12, mask plate.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and feature are described, institute gives an actual example and only is used for explaining the present invention, is not be used to limiting scope of the present invention.
As shown in Figure 2, a kind of LED epitaxial structure, comprise the substrate 1 that stacks gradually, transition zone 2, u-shaped gallium nitride layer 3, N-shaped gallium nitride layer 4, multiple quantum well layer 5, p-type gallium nitride layer 6, ITO tin-doped indium oxide layer 7, p-type electrode 8 and the N-shaped electrode 9 that is formed on the N-shaped gallium nitride layer, also comprise p-type contact layer 10, described p-type contact layer 10 is between p-type gallium nitride layer 6 and ITO tin-doped indium oxide layer 7, be and carve the type structure, and the hole concentration gradual change of p-type contact layer 10, survey hole concentration near one of p-type gallium nitride layer 6 high, low away from p-type gallium nitride layer 6 one side hole concentrations.
Wherein, described p-type contact layer 10 is by the Al of doped with Mg or Be
yIn
xGa
1-x-yThe semiconductor layer of N consists of, wherein 0≤x≤1,0≤y≤1,0≤x+y＜1.
Wherein, the doping content of described p-type contact layer 10 is gradation type from the bottom to top successively, surveys concentration near one of p-type gallium nitride layer high, and is low away from a side concentration of p-type gallium nitride layer.
Wherein, the doping content scope of described p-type contact layer 10 is 1*10
17/ cm
3～9*10
22/ cm
3
Wherein, the Thickness scope before described p-type contact layer 10 is etched is 0.01～100 μ m.
The below briefly introduces the growth course of this LED epitaxial structure, to strengthen the understanding to LED epitaxial structure of the present invention:
1) in the MOCVD reacting furnace, substrate 1 is toasted at 1200 ℃, dispose the foreign matter on substrate 1 surface;
2) be cooled to 550 ℃, the transition zone 2 of deposition 25nm;
3) temperature is elevated to 1100 ℃ again, on transition zone 2, carries out successively the preparation of the N-shaped gallium nitride layer 4 of the u-shaped gallium nitride layer 3 of 2.5 μ m and 2.5 μ m;
4) cool the temperature at 800 ° of C growth multiple quantum well layer 5;
5) temperature is risen to 950 ℃, the p-type electronic barrier layer of growth 50nm and the p-type gallium nitride layer 6 of 0.2 μ m;
6) the p-type contact layer 10 of continued growth one deck 0.4 μ m on p-type gallium nitride layer 6, wherein the concentration change in concentration from the bottom to top of p-type contact layer 10 magnesium elements is 5*10
20/ cm
3Fade to 1*10
18/ cm
3, the activation of then in 550 ℃ boiler tube, annealing;
7) at p-type contact layer 10 upper surface resist coatings, then carry out the selectivity exposure, as shown in Figure 3;
8) p-type contact layer 10 is carried out etching processing (as shown in Figure 4), p-type contact layer 10 is carved into a type of carving as shown in Figure 5, its equivalent resistance R1＜R2＜R3＜R4;
9) at the type of the carving inclined-plane of p-type contact layer 10 plating ITO layer 7(as shown in Figure 6);
10) at ITO layer deposition p-type electrode 8, etching, the deposition N-shaped electrode 9 final LED epitaxial structures that form as shown in Figure 2 on the N-shaped gallium nitride layer.
The present invention is by inserting the p-type contact layer, and the p-type contact layer is for carving the type structure, make its equivalent resistance be gradual change trend, this is so that when electric current injects, because the resistance of p-type contact layer is different, can be effectively balanced each regional current density takes full advantage of the effective recombination region of hole-electronics of luminescent layer, improves the whole lighting efficiency of LED; LED epitaxial structure of the present invention has the advantages such as simple in structure, easy to make, and relative traditional structure can improve luminous efficiency and the reliability of strong LED significantly.
The above only is preferred embodiment of the present invention, and is in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. LED epitaxial structure, comprise substrate, transition zone, u-shaped gallium nitride layer, N-shaped gallium nitride layer, multiple quantum well layer, p-type gallium nitride layer, ITO tin-doped indium oxide layer, the p-type electrode that stacks gradually and be formed at N-shaped electrode on the N-shaped gallium nitride layer, it is characterized in that, also comprise the p-type contact layer, described p-type contact layer is between p-type gallium nitride layer and ITO tin-doped indium oxide layer, be and carve the type structure, and the hole concentration gradual change of p-type contact layer, survey hole concentration near one of p-type gallium nitride layer high, low away from p-type gallium nitride layer one side hole concentration.
2. described a kind of LED epitaxial structure according to claim 1 is characterized in that, described p-type contact layer is by the Al of doped with Mg or Be
yIn
xGa
1-x-yThe semiconductor layer of N consists of, wherein 0≤x≤1,0≤y≤1,0≤x+y＜1.
3. described a kind of LED epitaxial structure according to claim 2 is characterized in that, the doping content of described p-type contact layer is gradation type from the bottom to top successively, surveys concentration near one of p-type gallium nitride layer high, and is low away from a side concentration of p-type gallium nitride layer.
4. described a kind of LED epitaxial structure according to claim 3 is characterized in that, the concentration range that described p-type contact layer mixes is 1*10
17/ cm
3～9*10
22/ cm
3
5. according to claim 1-3 or 4 described a kind of LED epitaxial structures, it is characterized in that, the Thickness scope that described p-type contact layer is carved before the corrosion is 0.01～100 μ m.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104332538A (en) * | 2014-11-04 | 2015-02-04 | 迪源光电股份有限公司 | Extension structure of light emitting diode (LED) |
| CN105023980A (en) * | 2014-04-25 | 2015-11-04 | 山东浪潮华光光电子股份有限公司 | LED with P type A1InGaN contact layer, and preparation method thereof |
| CN105161592A (en) * | 2015-07-29 | 2015-12-16 | 山东浪潮华光光电子股份有限公司 | LED having N type AlInGaN contact layer and preparation method |
| CN110364603A (en) * | 2019-07-18 | 2019-10-22 | 佛山市国星半导体技术有限公司 | A kind of antistatic epitaxial structure and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105023980A (en) * | 2014-04-25 | 2015-11-04 | 山东浪潮华光光电子股份有限公司 | LED with P type A1InGaN contact layer, and preparation method thereof |
| CN104332538A (en) * | 2014-11-04 | 2015-02-04 | 迪源光电股份有限公司 | Extension structure of light emitting diode (LED) |
| CN105161592A (en) * | 2015-07-29 | 2015-12-16 | 山东浪潮华光光电子股份有限公司 | LED having N type AlInGaN contact layer and preparation method |
| CN110364603A (en) * | 2019-07-18 | 2019-10-22 | 佛山市国星半导体技术有限公司 | A kind of antistatic epitaxial structure and preparation method thereof |
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