CN105957936B - A kind of DUV LED epitaxial wafer structure - Google Patents
A kind of DUV LED epitaxial wafer structure Download PDFInfo
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- CN105957936B CN105957936B CN201610466965.9A CN201610466965A CN105957936B CN 105957936 B CN105957936 B CN 105957936B CN 201610466965 A CN201610466965 A CN 201610466965A CN 105957936 B CN105957936 B CN 105957936B
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- 230000004888 barrier function Effects 0.000 claims abstract description 25
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 22
- 238000004020 luminiscence type Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000005693 optoelectronics Effects 0.000 abstract description 2
- 238000000605 extraction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention belongs to field of optoelectronic devices, specifically a kind of DUV LED epitaxial wafer structure, including substrate, the substrate top surface to sequentially consist of cushion, n AlGaN layers, multi-quantum well luminescence layer, p AlGaN layers and p GaN contact layers；The multi-quantum well luminescence layer is made of some be alternately stacked from bottom to top successively to well layer and barrier layer, which is AlxGa1‑xN/AlzInyGa1‑y‑zN/AlxGa1‑xN, wherein the value of 0.6≤x≤0.9, y and z will meet Eg（AlzInyGa1‑y‑zN）<Eg（AlxGa1‑xN）, barrier layer AlN.Using in AlxGa1‑xInserted with Al in N well layerzInyGa1‑y‑zThe structure of N thin layers, to regulate and control the relative position that heavy hole band, light hole band, crystalline field cleave hole band, improves TE moulds light and reduces the ratio of TM mould light, so as to improve the luminous efficiency of DUV LED.
Description
Technical field
The invention belongs to field of optoelectronic devices, is specifically a kind of DUV LED epitaxial wafer structure.
Background technology
UV LED（LED）Have the advantages that environment-protecting and non-poisonous, power consumption is low, small and long lifespan, meet new
It is environmentally friendly under epoch, energy saving etc. to require.AlGaN base LED emission wavelengths can cover the scope of 210nm-360nm, wherein 210nm-
300nm belongs to deep ultraviolet band.Deep ultraviolet LED has in printing, medical treatment, purification, investigation, data storage and illumination etc.
Major application is worth.
Compared with GaN base blue-ray LED, the luminous efficiency that wavelength is shorter than the deep ultraviolet LED of 300nm is generally relatively low.With
AlGaN base LED emission wavelengths gradually shorten, and the Al components in luminescent layer AlGaN will increase therewith, material epitaxy growth, doping,
And the difficulty of element manufacturing also increases therewith, optical output power then gradually reduces.On the one hand, it is brilliant when Al components are higher than 0.5
Body field splitting hole band substitutes heavy hole band and light hole band to become top of valence band so that the light emitting of positive light extraction（TE moulds）Rapidly
By the light emitting of side light extraction（TM moulds）Substituted, this just fundamentally limits light extraction efficiency.On the other hand, with Al components
Increase, the activation of alms giver/acceptor can accordingly increase so that p-type dopant activation is very low, and hole concentration is very low at room temperature.Al
When component is higher than 0.5, hole concentration is too low in p-AlGaN cannot form good Ohmic contact between electrode, in order to reduce p
Type ohmic contact resistance needs to introduce p-GaN cap layers, but p-GaN can absorb photon and reduce luminous efficiency.This is also high Al
Component AlGaN LED use the reason for inverted structure of bottom-emission.And traditional patterned substrate, surface roughening, antireflective
Technology effects in terms of deep ultraviolet light extraction efficiency of LED is improved such as layer, high reflective mirror are limited.
The content of the invention
The present invention is in order to improve the luminous efficiency of DUV LED, there is provided a kind of DUV LED epitaxial wafer structure.
The present invention is achieved by the following technical solutions：A kind of DUV LED epitaxial wafer structure, including substrate, the lining
Bottom upper surface sequentially consists of cushion, n-AlGaN layers, multi-quantum well luminescence layer, p-AlGaN layers and p-GaN contacts
Layer；The multi-quantum well luminescence layer is made of some be alternately stacked from bottom to top successively to well layer and barrier layer, which is
AlxGa1-xN/AlzInyGa1-y-zN/AlxGa1-xN, wherein the value of 0.6≤x≤0.9, y and z will meet Eg（AlzInyGa1-y-zN）
< Eg（AlxGa1-xN）, barrier layer AlN；Al in the well layerzInyGa1-y-zN layers of thickness is 0.3~2nm, and the thickness of well layer is small
In the thickness of barrier layer.
Used in technical solution of the present invention in AlxGa1-xInserted with Al in N well layerzInyGa1-y-zThe structure of N thin layers, to adjust
Heavy hole band, light hole band, the relative position of crystalline field splitting hole band are controlled, x values are mainly emission wavelength regulation, make target
Wavelength is located at the section of deep ultraviolet.The too conference of laminate structure thickness causes AlzInyGa1-y-zN insert layers serve as the angle of Quantum Well
Color so that the glow peak of non-targeted wavelength occurs and wave spectrum broadening, and weakens the glow peak of target wavelength, and thickness is too small to be not easy
Control, and do not have corresponding effect.
Preferably, two layers of Al in the well layerxGa1-xN layers of total thickness is 2~5nm, the thickness of barrier layer for 5~
20nm。
Further, the cushion is AlN cushions, or the buffering being made of AlN layers and AlGaN/GaN superlattices
Layer.
Further, the periodicity of well layer and barrier layer is 1-20 pairs in the multi-quantum well luminescence layer.
Further, Al in multi-quantum well luminescence layer preparation processxGa1-xN layers of growth temperature and AlzInyGa1-y-zN layers
Growth temperature is identical, simplifies technique and avoids heating and cooling process.
DUV LED epitaxial wafer structure of the present invention, using in AlxGa1-xInserted with Al in N well layerzInyGa1-y-zN
The structure of thin layer, to regulate and control the relative position that heavy hole band, light hole band, crystalline field cleave hole band, improves TE moulds light and drops
The ratio of low TM moulds light, so as to improve the luminous efficiency of DUV LED.
Brief description of the drawings
Fig. 1 is the structure diagram of DUV LED provided by the invention（Substrate is sapphire）.Certainly, in some embodiments
In can also use other substrate materials, such as Si, SiC.
Fig. 2 is common Al0.8Ga0.2The valence band schematic diagram of N/AlN structure Quantum Well.As shown in the figure, crystalline field cleaves hole
Band is on heavy hole band and light hole band, it is meant that and the light component that Quantum Well radiation recombination produces is mainly the light of TM moulds,
Only least a portion of TE moulds light, that is, be to say that the light emitting perpendicular to c faces is seldom, it is unfavorable for the extraction of light.
Fig. 3 is the Al that the embodiment of the present invention 1 providesxGa1-xN/AlzInyGa1-y-zN/AlxGa1-xN/AlN structure Quantum Well
Valence band schematic diagram, x=0.8, y=z=0.05.As shown in the figure, in Al0.8Ga0.2Al is inserted into N0.05In0.05Ga0.9N thin layers can be adjusted
Control energy band so that heavy hole band and light hole band are located on crystalline field splitting band, it is meant that what Quantum Well radiation recombination produced
Light component is mainly the light of TE moulds, that is, improves the light emitting perpendicular to c faces, is conducive to improve the luminous efficiency of device.
Embodiment
Embodiment 1
A kind of DUV LED epitaxial wafer structure, including substrate, sequentially consist of AlN cushions, n- on the substrate
AlGaN layer, multi-quantum well luminescence layer, p-AlGaN layers and p-GaN contact layers；The multi-quantum well luminescence layer is by 1 pair of well layer
Composition is alternately stacked from bottom to top successively with barrier layer, which is AlxGa1-xN/AlzInyGa1-y-zN/AlxGa1-xN, wherein x=
0.8, y=z=0.05.Barrier layer is AlN；Al in the well layerzInyGa1-y-zN layers of thickness is 0.8nm, two layers of AlxGa1-xN layers
Total thickness is 5nm, and the thickness of barrier layer is 15nm.
Embodiment 2
A kind of DUV LED epitaxial wafer structure, including substrate, sequentially consist of on the substrate by AlN layers and
The cushion of AlGaN/GaN superlattices composition, n-AlGaN layers, multi-quantum well luminescence layer, p-AlGaN layers and p-GaN contacts
Layer；The multi-quantum well luminescence layer is alternately stacked is formed successively from bottom to top by 10 pairs of well layer and barrier layer, which is
AlxGa1-xN/AlzInyGa1-y-zN/AlxGa1-xN, wherein x=0.6, y=z=0, barrier layer AlN；Al in the well layerzInyGa1-y- zN layers of thickness is 1nm, two layers of AlxGa1-xN layers of total thickness is 3nm, and the thickness of barrier layer is 10nm.
Embodiment 3
A kind of DUV LED epitaxial wafer structure, including substrate, sequentially consist of AlN cushions, n- on the substrate
AlGaN layer, multi-quantum well luminescence layer, p-AlGaN layers and p-GaN contact layers；The multi-quantum well luminescence layer is by 20 pairs of traps
Layer and barrier layer are alternately stacked composition from bottom to top successively, which is AlxGa1-xN/AlzInyGa1-y-zN/AlxGa1-xN, wherein
X=0.9, y=0, z=0.05, barrier layer AlN；Al in the well layerzInyGa1-y-zN layers of thickness is 2nm, two layers of AlxGa1-xN layers
Total thickness be 2nm, the thickness of barrier layer is 5nm.
Embodiment 4
A kind of DUV LED epitaxial wafer structure, including substrate, sequentially consist of AlN cushions, n- on the substrate
AlGaN layer, multi-quantum well luminescence layer, p-AlGaN layers and p-GaN contact layers；The multi-quantum well luminescence layer is by 20 pairs of traps
Layer and barrier layer are alternately stacked composition from bottom to top successively, which is AlxGa1-xN/AlzInyGa1-y-zN/AlxGa1-xN, wherein
X=0.8, y=0.1, z=0, barrier layer AlN；Al in the well layerzInyGa1-y-zN layers of thickness is 0.3nm, two layers of AlxGa1-xN layers
Total thickness be 4nm, the thickness of barrier layer is 20nm.
Claims (9)
1. a kind of DUV LED epitaxial wafer structure, including substrate, the substrate top surface sequentially consist of cushion, n-
AlGaN layer, multi-quantum well luminescence layer, p-AlGaN layers and p-GaN contact layers；It is characterized in that, the multi-quantum well luminescence layer
It is made of some be alternately stacked from bottom to top successively to well layer and barrier layer, which is AlxGa1-xN/AlzInyGa1-y-zN/
AlxGa1-xN, wherein the value of 0.6≤x≤0.9, y and z will meet Eg（AlzInyGa1-y-zN）< Eg（AlxGa1-xN）, barrier layer is
AlN；Al in the well layerzInyGa1-y-zN layers of thickness is 0.3~2nm, and the thickness of well layer is less than the thickness of barrier layer.
2. a kind of DUV LED epitaxial wafer structure according to claim 1, it is characterised in that two layers in the well layer
AlxGa1-xN layers of total thickness are 2~5nm, and the thickness of barrier layer is 5~20nm.
3. a kind of DUV LED epitaxial wafer structure according to claim 1 or 2, it is characterised in that the cushion is AlN
Cushion, or the cushion being made of AlN layers and AlGaN/GaN superlattices.
A kind of 4. DUV LED epitaxial wafer structure according to claim 1 or 2, it is characterised in that the multiple quantum well light emitting
The periodicity of well layer and barrier layer is 1-20 pairs in layer.
A kind of 5. DUV LED epitaxial wafer structure according to claim 3, it is characterised in that the multi-quantum well luminescence layer
The periodicity of middle well layer and barrier layer is 1-20 pairs.
A kind of 6. DUV LED epitaxial wafer structure according to claim 1 or 2, it is characterised in that multi-quantum well luminescence layer system
Al during standbyxGa1-xN layers of growth temperature and AlzInyGa1-y-zN layers of growth temperature is identical.
7. a kind of DUV LED epitaxial wafer structure according to claim 3, it is characterised in that prepared by multi-quantum well luminescence layer
During AlxGa1-xN layers of growth temperature and AlzInyGa1-y-zN layers of growth temperature is identical.
8. a kind of DUV LED epitaxial wafer structure according to claim 4, it is characterised in that prepared by multi-quantum well luminescence layer
During AlxGa1-xN layers of growth temperature and AlzInyGa1-y-zN layers of growth temperature is identical.
9. a kind of DUV LED epitaxial wafer structure according to claim 5, it is characterised in that prepared by multi-quantum well luminescence layer
During AlxGa1-xN layers of growth temperature and AlzInyGa1-y-zN layers of growth temperature is identical.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610466965.9A CN105957936B (en) | 2016-06-24 | 2016-06-24 | A kind of DUV LED epitaxial wafer structure |
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| CN201610466965.9A CN105957936B (en) | 2016-06-24 | 2016-06-24 | A kind of DUV LED epitaxial wafer structure |
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| CN105957936B true CN105957936B (en) | 2018-04-13 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109216510A (en) * | 2017-06-29 | 2019-01-15 | 苏州新纳晶光电有限公司 | A kind of epitaxial wafer growth method delaying LED stress |
| CN109524519B (en) * | 2018-12-18 | 2020-12-25 | 南通大学 | Nitride quantum well structure light-emitting diode |
| CN112951957B (en) * | 2021-03-21 | 2021-12-21 | 南通大学 | Deep ultraviolet AlGaN-based light-emitting diode with coupled quantum well structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5959307A (en) * | 1995-11-06 | 1999-09-28 | Nichia Chemical Industries Ltd. | Nitride semiconductor device |
| CN105161592A (en) * | 2015-07-29 | 2015-12-16 | 山东浪潮华光光电子股份有限公司 | LED having N type AlInGaN contact layer and preparation method |
| CN105514157A (en) * | 2016-01-13 | 2016-04-20 | 中国科学院上海技术物理研究所 | GaN-based double heterojunction HEMT (High Electron Mobility Transistor) device and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6992319B2 (en) * | 2000-07-18 | 2006-01-31 | Epitaxial Technologies | Ultra-linear multi-channel field effect transistor |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5959307A (en) * | 1995-11-06 | 1999-09-28 | Nichia Chemical Industries Ltd. | Nitride semiconductor device |
| CN105161592A (en) * | 2015-07-29 | 2015-12-16 | 山东浪潮华光光电子股份有限公司 | LED having N type AlInGaN contact layer and preparation method |
| CN105514157A (en) * | 2016-01-13 | 2016-04-20 | 中国科学院上海技术物理研究所 | GaN-based double heterojunction HEMT (High Electron Mobility Transistor) device and manufacturing method thereof |
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