CN105702829B - Light emitting diode epitaxial structure with P-type ohmic contact layer - Google Patents
Light emitting diode epitaxial structure with P-type ohmic contact layer Download PDFInfo
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- 239000000463 material Substances 0.000 claims abstract description 89
- 239000004065 semiconductor Substances 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 230000004888 barrier function Effects 0.000 claims abstract description 18
- 230000008859 change Effects 0.000 claims abstract description 18
- 230000010287 polarization Effects 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000006835 compression Effects 0.000 claims description 3
- 238000007906 compression Methods 0.000 claims description 3
- 239000004047 hole gas Substances 0.000 claims description 3
- 230000009467 reduction Effects 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 9
- 150000004767 nitrides Chemical class 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 4
- 238000005036 potential barrier Methods 0.000 abstract description 4
- 229910002601 GaN Inorganic materials 0.000 description 20
- 238000000151 deposition Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 12
- 238000002360 preparation method Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000007792 gaseous phase Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000011017 operating method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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Abstract
The present invention has the light emitting diode epitaxial structure of P-type ohmic contact layer, be related at least one jump in potential potential barrier or surface potential barrier characterized by electrode is specially adapted for photoemissive semiconductor devices, the structure sequentially includes substrate, buffer layer, N-type semiconductor material layer, multiple quantum well layer, P-type electronic barrier layer, P-type semiconductor material transport layer and P-type ohmic contact layer from bottom to up, wherein, the group of P-type ohmic contact layer becomes AlxInyGa1‑x‑ yN, wherein 0≤x < 1,0≤y < 1,0≤1-x-y, and group component is gradual change, along the direction of growth, its lattice constant is gradually increased, and forbidden bandwidth is gradually reduced.The present invention overcomes wide nitride-based semiconductors of prohibiting of the existing technology to be difficult to form the defect of p-type Ohmic contact and hole supply bottleneck, improves the luminous efficiency of LED.
Description
Technical field
Technical solution of the present invention is related at least one jump in potential potential barrier characterized by electrode or surface potential barrier
It is specially adapted for photoemissive semiconductor devices, specifically with the LED epitaxial knot of P-type ohmic contact layer
Structure.
Background technique
Since light emitting diode has energy conservation and environmental protection, dexterous can design, the advantages such as long-life are sent out rapidly in recent years
Exhibition.Especially the semiconductor LED technology of III-V nitride has pushed directly on LED illumination into thousand in the success in blue light field
Ten thousand families of family.Currently, nitride LED is towards shorter wavelength (ultraviolet, deep ultraviolet) and more long wavelength (green, yellow) development.LED's
Ohmic contact characteristic directly influences the efficiency and reliability of entire device.And acceptor impurity magnesium in nitride P-type semiconductor
Activation energy is high, and less than 1%, low hole concentration makes it difficult to form P-type Ohmic contact activation efficiency.For gallium nitride, it is
Formation Ohmic contact, common means are heavy doping, but it will affect lattice quality, increase the absorption of light.Another
Method is to grow one layer of undoped InGaN in gallium nitride surface, is utilized at the p-GaN/InGaN heterojunction boundary of [0001] direction
Polarization field-effect, cause energy bandmatch realize Ohmic contact.It is this to be acted on using polarization field-effect, improve magnesium in InGaN
Activation efficiency, the method for improving hole concentration avoid heavy doping, and are able to achieve good Ohmic contact, but this method is only
It can be realized in very thin InGaN, be difficult to obtain the raising of the hole concentration within the scope of large volume, and thin InGaN's is narrow
Forbidden bandwidth also limits it in the application of deep ultraviolet band.Therefore thick nitridation is utilized in the deep ultraviolet LED of the prior art
Gallium acts on hole and provides layer, this significantly limits the luminous efficiency in deep ultraviolet LED.In short, wide taboo of the existing technology
Nitride-based semiconductor is difficult to form the defect of p-type Ohmic contact and hole supply bottleneck.
Summary of the invention
The technical problems to be solved by the present invention are: providing the LED epitaxial knot with P-type ohmic contact layer
Structure is the semiconductor material i.e. P-type Ohmic contact in P-type transmission layer surface one layer of component-gradient of growth of LED epitaxial structure
Layer, along the direction of growth, its lattice constant is gradually increased, and forbidden bandwidth is gradually reduced, thus in entire component-gradient layer
Compression stress is generated, polarization negative electrical charge is generated using polarity effect by piezoelectric polarization effect, to attract hole, is generated three-dimensional
Hole gas increases hole concentration, reduces the width in surface depletion area, forms good Ohmic contact, improve LED epitaxy junction
The P-type ohmic contact characteristic of structure overcomes wide nitride-based semiconductor of prohibiting of the existing technology and is difficult to form p-type Ohmic contact
With the defect of hole supply bottleneck, the luminous efficiency of LED is improved.
The present invention solves technical solution used by the technical problem: the light emitting diode with P-type ohmic contact layer
Epitaxial structure, the structure sequentially include substrate, buffer layer, N-type semiconductor material layer, multiple quantum well layer, P-type electricity from bottom to up
Sub- barrier layer, P-type semiconductor material transport layer and P-type ohmic contact layer, wherein the group of P-type ohmic contact layer becomes
AlxInyGa1-x-yN, wherein 0≤x < 1,0≤y < 1,0≤1-x-y, and group component is gradual change, along the direction of growth, it is brilliant
Lattice constant gradually increases, and forbidden bandwidth is gradually reduced.
The above-mentioned light emitting diode epitaxial structure with P-type ohmic contact layer, the substrate be preferably sapphire, Si,
SiC, AlN, quartz glass or GaN.
The above-mentioned light emitting diode epitaxial structure with P-type ohmic contact layer, the material of the buffer layer are
Alx1Iny1Ga1-x1-y1N, in formula, 0≤x1≤1,0≤y1≤1,0≤1-x1+y1, with a thickness of 10~50nm.
The above-mentioned light emitting diode epitaxial structure with P-type ohmic contact layer, the material of the N-type semiconductor material layer
For Alx1Iny1Ga1-x1-y1N, in formula, 0≤x1≤1,0≤y1≤1,0≤1-x1-y1, with a thickness of 2~8 μm.
The above-mentioned light emitting diode epitaxial structure with P-type ohmic contact layer, the material of the P-type electronic barrier layer are
Alx1Iny1Ga1-x1-y1N, in formula, 0≤x1≤1,0≤y1≤1,0≤1-x1-y1, with a thickness of 10~100nm.
The above-mentioned light emitting diode epitaxial structure with P-type ohmic contact layer, the p-type semiconductor material transport layer
Material is Alx1Iny1Ga1-x1-y1N, in formula, 0≤x1≤1,0≤y1≤1,0≤1-x1-y1, with a thickness of 100~500nm.
The above-mentioned light emitting diode epitaxial structure with P-type ohmic contact layer, the group of the P-type ohmic contact layer become
AlxInyGa1-x-yN, group component are linear gradients.
The above-mentioned light emitting diode epitaxial structure with P-type ohmic contact layer, the group of the P-type ohmic contact layer become
AlxInyGa1-x-yN, group component are non-linear gradients.
The above-mentioned light emitting diode epitaxial structure with P-type ohmic contact layer, the P-type ohmic contact layer with a thickness of
10nm~200nm.
The above-mentioned light emitting diode epitaxial structure with P-type ohmic contact layer, preparation method are as follows:
The first step, in MOCVD (i.e. metallo-organic compound chemical gaseous phase deposition) reacting furnace, by substrate 1200 DEG C into
Row baking, disposes substrate surface foreign matter；
Second step, in MOCVD reacting furnace, in the buffering that the first step treated substrate surface deposition thickness is 25nm
Layer；
Third step, in MOCVD reacting furnace, the N-type that deposition thickness is 2~8 μm on the buffer layer that second step obtains is partly
Conductor material layer；
4th step grows multiple quantum wells on the N-type semiconductor material layer that third step obtains in MOCVD reacting furnace
Layer；
5th step, in MOCVD reacting furnace, growth thickness is the forbidden band of 50nm on the multiple quantum well layer that the 4th step obtains
Width is greater than the P-type electronic barrier layer for the forbidden bandwidth that quantum is built, and the P-type semiconductor material with a thickness of 10nm~500nm
Transport layer；
6th step, in MOCVD reacting furnace, growth thickness is in the P-type semiconductor material transport layer that the 5th step obtains
The group of the P-type ohmic contact layer of 10nm~200nm group component gradual change, the P-type ohmic contact layer becomes AlxInyGa1-x-yN,
In 0≤x < 1,0≤y < 1,0≤1-x-y.
The above-mentioned light emitting diode epitaxial structure with P-type ohmic contact layer, related raw material can be by known
Approach obtains, and the operating procedure in preparation method is that those skilled in the art will appreciate that.
The beneficial effects of the present invention are: compared with prior art, the present invention have following substantive distinguishing features outstanding and
Marked improvement:
(1) existing conventional light emitting diode epitaxial structure, as shown in figure 3, the structure successively includes substrate 101, delays
Layer 102, N-type semiconductor material layer 103, multiple quantum well layer 104, P-type electronic barrier layer 105 and P-type semiconductor material is rushed to pass
Defeated layer 106 (Liu Ruxi chief editor, white light emitting diode technology of preparing: by chip to encapsulating, publish, in January, 2015 by chemical industry
It publishes；Guo Weiling chief editor, LED component and technology, Electronic Industry Press publish, and in September, 2015 is published).Existing skill
Exist in art since the p-type of wide bandgap semiconductor nitride adulterates difficulty, p type impurity is difficult to activate, so lacking enough skies
Cave is injected into Quantum Well and is difficult to form good p-type Ohmic contact.The present invention and existing conventional LED epitaxial
The essential distinction of structure is as shown in Fig. 2, increasing one layer of group on P-type semiconductor material transport layer 106 becomes
AlxInyGa1-x-yN, wherein 0≤x < 1,0≤y < 1,0≤1-x-y, and group component is the P-type ohmic contact layer of gradual change
107.The compound of this layer is gradually increased by the modulation of component, lattice constant along the direction C+, and forbidden bandwidth is along C+
Direction gradually decreases, and variation, which can be linear reduction, non-linear to be reduced.
(2) scheme proposed by the present invention is to grow one on 106 surface of P-type semiconductor material transport layer of LED epitaxial structure
The semiconductor material of layer component-gradient, i.e. P-type ohmic contact layer 107 are made by modulating the compound component of this layer along life
Its lattice constant of length direction gradually increases, and forbidden bandwidth is gradually reduced.To generate compression in entire component-gradient layer
Stress generates polarization negative electrical charge using polarity effect by piezoelectric polarization effect, to attract hole, generates three-dimensional hole gas,
Increase hole concentration, reduces the width in surface depletion area, not only form good Ohmic contact in this way, improve LED extension
The P-type ohmic contact characteristic of structure, and entire P-type layer (including P-type electronic barrier layer, P-type semiconductor material transport layer
With P-type ohmic contact layer) doping and thickness can be reduced, it overcomes wide nitride-based semiconductor of prohibiting of the existing technology and is difficult to
The defect for forming p-type Ohmic contact and hole supply bottleneck, improves the luminous efficiency of LED, to save production cost.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1 is the energy band for the hole transmission layer that the present invention has in the light emitting diode epitaxial structure of P-type ohmic contact layer
Structural schematic diagram.
Fig. 2 is that there is the present invention light emitting diode epitaxial structure of P-type ohmic contact layer to constitute schematic diagram.
Fig. 3 is that the light emitting diode epitaxial structure of the prior art constitutes schematic diagram.
In figure, 101. substrates, 102. buffer layers, 103.N- type semiconductor material layer, 104. multiple quantum well layers, 105.P- type
Electronic barrier layer, 106.P- type semiconductor material transport layer, 107.P- type ohmic contact layer.
Specific embodiment
Embodiment illustrated in fig. 1 shows that the present invention has the sky in the light emitting diode epitaxial structure of P-type ohmic contact layer
The energy band of cave transport layer successively includes the energy band of P-type electronic barrier layer 105, P-type semiconductor material by [0001] direction of growth
The energy band of transport layer 106 and the energy band of P-type ohmic contact layer 107.The taboo of the energy band of visible P-type ohmic contact layer 107 in Fig. 1
Bandwidth is successively decreased along the direction C+ along [0001] direction of growth, and forbidden bandwidth gradual change is since group component gradual change is drawn
It rises, this also demonstrates the present invention with P-type ohm in the light emitting diode epitaxial structure of P-type ohmic contact layer in turn
The group component of contact layer 107 is gradual change.
Embodiment illustrated in fig. 2 show the present invention have P-type ohmic contact layer light emitting diode epitaxial structure constitute from
Under supreme sequence successively include substrate 101, buffer layer 102, N-type semiconductor material layer 103, multiple quantum well layer 104, P-type electricity
Sub- barrier layer 105, P-type semiconductor material transport layer 106 and P-type ohmic contact layer 107.The P-type ohm drawn in Fig. 2 connects
The group component of the linear expression P-type ohmic contact layer 107 of contact layer 107 is gradual change.
Embodiment illustrated in fig. 3 shows the prior art (Liu Ruxi chief editor, white light emitting diode technology of preparing: extremely by chip
Encapsulation, chemical industry are published, and in January, 2015 publishes；Guo Weiling chief editor, LED component and technology, Electronic Industry Press go out
Version, in September, 2015 are published) light emitting diode epitaxial structure to constitute sequence from bottom to up successively include substrate 101, buffer layer
102, N-type semiconductor material layer 103, multiple quantum well layer 104, P-type electronic barrier layer 105 and P-type semiconductor material transport layer
106。
Embodiment 1
The light emitting diode epitaxial structure with P-type ohmic contact layer of the present embodiment, the structure are sequentially wrapped from bottom to up
Include Sapphire Substrate 101, with a thickness of 25nm AlN material buffer layer 102, with a thickness of the N-type semiconductor of 4 μm of AlN materials
Material layer 103, quantum build AlN with a thickness of the Quantum Well Al of 10nm0.8Ga0.2N with a thickness of 5nm Al0.8Ga0.2N/AlN material
Multiple quantum well layer 104, with a thickness of 50nm AlN material P-type electronic barrier layer 105, with a thickness of the Al of 150nm0.9Ga0.1N material
The P-type semiconductor material transport layer 106 of matter and Al with a thickness of 10nmxGa1-xThe P-type ohmic contact layer 107 of N material, in formula
X is from 0.9 linear gradient to 0, so that its lattice constant gradually increases along the direction of growth, and forbidden bandwidth is gradually reduced.
The light emitting diode epitaxial structure with P-type ohmic contact layer of above-mentioned the present embodiment, preparation method are as follows:
The first step, in MOCVD (i.e. metallo-organic compound chemical gaseous phase deposition) reacting furnace, by Sapphire Substrate 101
It is toasted at 1200 DEG C, disposes substrate surface foreign matter；
Second step, in MOCVD reacting furnace, in the AlN that the first step treated 101 surface deposition thickness of substrate is 25nm
The buffer layer 102 of material；
Third step, in MOCVD reacting furnace, deposition thickness is 4 μm of AlN material on the buffer layer 102 that second step obtains
The N-type semiconductor material layer 103 of matter；
4th step, in MOCVD reacting furnace, grown quantum is built on the N-type semiconductor material layer 103 that third step obtains
AlN with a thickness of 10nm Quantum Well Al0.8Ga0.2N with a thickness of 5nm Al0.8Ga0.2The multiple quantum well layer 104 of N/AlNl material；
5th step, in MOCVD reacting furnace, growth thickness is 50nm's on the multiple quantum well layer 104 that the 4th step obtains
The P-type electronic barrier layer 105 of AlN material, and the Al with a thickness of 150nm0.9Ga0.1The P-type semiconductor material transport layer of N material
106；
6th step is grown thick in MOCVD reacting furnace in the P-type semiconductor material transport layer 106 that the 5th step obtains
Degree is the Al of 10nmxGa1-xThe P-type ohmic contact layer 107 of N material, wherein x is from 0.9 linear gradient to 0, and to along life
Its lattice constant of length direction gradually increases, and forbidden bandwidth is gradually reduced.
Embodiment 2
The light emitting diode epitaxial structure with P-type ohmic contact layer of the present embodiment, the structure are sequentially wrapped from bottom to up
Include Si substrate 101, the Al with a thickness of 10nm0.2In0.3Ga0.5The buffer layer 102 of N material, with a thickness of 2 μm of Al0.1In0.5Ga0.4N
N-type semiconductor material layer 103, the quantum of material build GaN with a thickness of the Quantum Well In of 10nm0.8Ga0.2N is with a thickness of 5nm's
In0.8Ga0.2The multiple quantum well layer 104 of N/GaN material, with a thickness of 10nm AlN material P-type electronic barrier layer 105, thickness
For the P-type semiconductor material transport layer 106 of the AlN material of 100nm and with a thickness of the Al of 150nmxInyGa1-x-yThe P- of N material
Type ohmic contact layer 107, in formula, preceding 100nm growth keeps y=0, and x non-linear is gradient to 0 from 0.9；50nm growth afterwards keeps x
=0, y are from 0 nonlinear change to 0.1, and along the direction of growth, its lattice constant gradually increases entire P-type ohmic contact layer 107,
And forbidden bandwidth is gradually reduced.
The light emitting diode epitaxial structure with P-type ohmic contact layer of above-mentioned the present embodiment, preparation method are as follows:
The first step exists Si substrate 101 in MOCVD (i.e. metallo-organic compound chemical gaseous phase deposition) reacting furnace
1200 DEG C are toasted, and substrate surface foreign matter is disposed；
Second step is 10nm's in the first step treated 101 surface deposition thickness of substrate in MOCVD reacting furnace
Al0.2In0.3Ga0.5The buffer layer 102 of N material；
Third step, in MOCVD reacting furnace, deposition thickness is 2 μm on the buffer layer 102 that second step obtains
Al0.1In0.5Ga0.4The N-type semiconductor material layer 103 of N material；
4th step, in MOCVD reacting furnace, grown quantum is built on the N-type semiconductor material layer 103 that third step obtains
GaN with a thickness of 10nm Quantum Well In0.8Ga0.2N with a thickness of 5nm In0.8Ga0.2The multiple quantum well layer 104 of N/GaN material；
5th step, in MOCVD reacting furnace, growth thickness is 10nm's on the multiple quantum well layer 104 that the 4th step obtains
The P-type electronic barrier layer 105 of GaN material, and the P-type semiconductor material transport layer 106 of the AlN material with a thickness of 100nm；
6th step is grown thick in MOCVD reacting furnace in the P-type semiconductor material transport layer 106 that the 5th step obtains
Degree is the Al of 150nmxInyGa1-x-yThe P-type ohmic contact layer 107 of N material, in formula, preceding 100nm growth keeps y=0, x from
0.9 non-linear is gradient to 0；50nm growth keeps x=0 afterwards, and y is from 0 nonlinear change to 0.1, entire P-type ohmic contact layer 107
Along the direction of growth, its lattice constant is gradually increased, and forbidden bandwidth is gradually reduced.
Embodiment 3
The light emitting diode epitaxial structure with P-type ohmic contact layer of the present embodiment, the structure are sequentially wrapped from bottom to up
Include SiC substrate 101, with a thickness of 50nm GaN material buffer layer 102, with a thickness of the N-type semiconductor material of 8 μm of GaN materials
The bed of material 103, quantum build GaN with a thickness of the Quantum Well In of 10nm0.8Ga0.2N with a thickness of 5nm In0.8Ga0.2N/GaN material it is more
Quantum well layer 104, the Al with a thickness of 100nm0.2Ga0.8The P-type electronic barrier layer 105 of N material, the GaN material with a thickness of 500nm
The P-type semiconductor material transport layer 106 of matter and In with a thickness of 200nmxGa1-xThe P-type ohmic contact layer 107 of N material, formula
In, preceding 100nm grows x from 0 linear gradient to 0.2, and rear 100nm growth x is from 0.2 linear change to 1, thus along the direction of growth
Its lattice constant gradually increases, and forbidden bandwidth is gradually reduced.
The light emitting diode epitaxial structure with P-type ohmic contact layer of above-mentioned the present embodiment, preparation method are as follows:
The first step exists SiC substrate 101 in MOCVD (i.e. metallo-organic compound chemical gaseous phase deposition) reacting furnace
1200 DEG C are toasted, and substrate surface foreign matter is disposed；
Second step, in MOCVD reacting furnace, in the GaN that the first step treated 101 surface deposition thickness of substrate is 50nm
The buffer layer 102 of material；
Third step, in MOCVD reacting furnace, deposition thickness is 8 μm of GaN material on the buffer layer 102 that second step obtains
The N-type semiconductor material layer 103 of matter；
4th step, in MOCVD reacting furnace, grown quantum is built on the N-type semiconductor material layer 103 that third step obtains
GaN with a thickness of 10nm Quantum Well In0.8Ga0.2N with a thickness of 5nm In0.8Ga0.2The multiple quantum well layer 104 of N/GaN material；
5th step, in MOCVD reacting furnace, growth thickness is 100nm's on the multiple quantum well layer 104 that the 4th step obtains
Al0.2Ga0.8The P-type electronic barrier layer 105 of N material, and the P-type semiconductor material transport layer of the GaN material with a thickness of 500nm
106；
6th step is grown thick in MOCVD reacting furnace in the P-type semiconductor material transport layer 106 that the 5th step obtains
Degree is the In of 200nmxGa1-xThe P-type ohmic contact layer 107 of N material, in formula, preceding 100nm grows x from 0 linear gradient to 0.2,
100nm grows x from 0.2 linear change to 1, so that its lattice constant gradually increases along the direction of growth, and forbidden bandwidth afterwards
It is gradually reduced.
Embodiment 4
In addition to substrate 101 is AlN, other are the same as embodiment 1.
Embodiment 5
In addition to substrate 101 is quartz glass, other are the same as embodiment 2.
Embodiment 6
In addition to substrate 101 is GaN, other are the same as embodiment 3.
Raw material involved in embodiment can be obtained by known approach, and the operating procedure in preparation method is this
What those skilled in the art will appreciate that.
Claims (1)
1. the light emitting diode epitaxial structure with P-type ohmic contact layer, it is characterised in that: the structure is sequentially wrapped from bottom to up
Include substrate, buffer layer, N-type semiconductor material layer, multiple quantum well layer, P-type electronic barrier layer, P-type semiconductor material transport layer
With P-type ohmic contact layer, wherein the group of P-type ohmic contact layer becomes AlxInyGa1-x-yN, wherein 0≤x < 1,0≤y < 1,
0≤1-x-y, and group component is gradual change, and along the direction of growth, its lattice constant is gradually increased, and forbidden bandwidth gradually subtracts
It is small；The mode of the group component gradual change is any one in following three kinds: 1. AlxGa1-xIn N formula, x from 0.9 linear gradient to
0；②AlxInyGa1-x-yIn N formula, preceding 100nm growth keeps y=0, and x non-linear is gradient to 0 from 0.9；Afterwards 50nm growth keep x=
0, y from 0 nonlinear change to 0.1；③AlxGa1-xIn N formula, preceding 100nm grows x from 0 linear gradient to 0.2, and rear 100nm is grown
X is from 0.2 linear change to 1；
One layer of group is increased on P-type semiconductor material transport layer as AlxInyGa1-x-yN, wherein 0≤x < 1,0≤y <
1,0≤1-x-y and group component are the P-type ohmic contact layer of gradual change, modulation of the compound of this layer by component, lattice
Constant is gradually increased along the direction C+, and forbidden bandwidth is gradually decreased along the direction C+, and variation can be linear reduction can also
With non-linear reduction；
The semiconductor material of one layer of component-gradient, i.e. P- are grown in the P-type semiconductor material transmission layer surface of LED epitaxial structure
Type ohmic contact layer 107 gradually increases its lattice constant along the direction of growth by modulating the compound component of this layer, and
And forbidden bandwidth is gradually reduced, to generate compression stress in entire component-gradient layer, utilizes pole by piezoelectric polarization effect
Change effect and generate polarization negative electrical charge, to attract hole, generates three-dimensional hole gas, increase hole concentration, reduce surface depletion area
Width, not only form good Ohmic contact in this way, improve the P-type ohmic contact characteristic of LED epitaxial structure, and
Entire P-type layer, including P-type electronic barrier layer, P-type semiconductor material transport layer and P-type ohmic contact layer, reduce doping and
Thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610257517.8A CN105702829B (en) | 2016-04-22 | 2016-04-22 | Light emitting diode epitaxial structure with P-type ohmic contact layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610257517.8A CN105702829B (en) | 2016-04-22 | 2016-04-22 | Light emitting diode epitaxial structure with P-type ohmic contact layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105702829A CN105702829A (en) | 2016-06-22 |
| CN105702829B true CN105702829B (en) | 2019-05-31 |
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| CN105023980A (en) * | 2014-04-25 | 2015-11-04 | 山东浪潮华光光电子股份有限公司 | LED with P type A1InGaN contact layer, and preparation method thereof |
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| CN105023980A (en) * | 2014-04-25 | 2015-11-04 | 山东浪潮华光光电子股份有限公司 | LED with P type A1InGaN contact layer, and preparation method thereof |
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