CN203659911U - LED epitaxial structure - Google Patents
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- CN203659911U CN203659911U CN201320657752.6U CN201320657752U CN203659911U CN 203659911 U CN203659911 U CN 203659911U CN 201320657752 U CN201320657752 U CN 201320657752U CN 203659911 U CN203659911 U CN 203659911U
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Abstract
An LED epitaxial structure is described in the utility model, a periodical gradient doped structure is adopted in an N type GaN layer, Si-doped GaN and undoped GaN layers are arranged in an alternate manner, electrons can be gathered in the undoped GaN layers to form high-density two-dimensional electron gas, and therefore the concentration and mobility of a carrier can be effectively improved; what is important is that a multi-junction capacitance structure is formed between a U-shaped superlattice layer on a multiple quantum well layer and the N-type GaN layer; the transverse expansion ability of the carrier can be effectively improved; the distribution area of an electric current flowing into the multiple quantum well layer is enlarged; and LED driving voltage is effectively reduced.
Description
Technical field
The utility model relates to technical field of semiconductors, is specifically related to a kind ofly can reduce LED forward voltage drop, improve luminous efficiency and the epitaxial structure in useful life.
Background technology
Gallium nitride (GaN) radical luminescence diode (Light-Emitting Diode, LED) has the advantages such as the life-span is long, low in energy consumption, pollution-free, can be applied in the numerous areas such as demonstration, illumination.Although industrialization of GaN base LED, existing LED epitaxial structure and preparation method thereof makes the problem that LED chip forward voltage drop is high, light efficiency is low fail to be well solved always.
Chinese patent CN103187497A discloses a kind of epitaxial structure and growing method thereof that improves large size chip light efficiency, is specially: at PSS(Patterned Sapphire Substrate, be translated into: patterned Sapphire Substrate) upper growing GaN resilient coating; The UGaN layer of growing on this GaN resilient coating; The N-type GaN layer of grow doping Si on described U-shaped GaN layer; Alternating growth forms a UGaN layer of a NAlGaN layer of doping Si and Al and the Si that undopes, an alternating growth 38-40 cycle; Then alternating growth forms the 2nd UGaN layer of the 2nd NAlGaN layer of doping Si and Al and the Si that undopes, an alternating growth 25-26 cycle; Then alternating growth forms the 3rd NGaN layer of the 3rd NAlGaN layer of doping Si and Al and the Si that undopes, an alternating growth 15-16 cycle; Periodically grow active layer MQW and PGaN layer.This patent is by changing the doping way of Si in N-type GaN layer, in N-type GaN, periodically adulterate or undope Si, the GaN of doping Si has low-resistance value, the GaN of Si of undoping has high resistance, and the staggered N-type GaN of high low-resistance value makes electronics ability extending transversely strengthen in electric current course of conveying.Solved in same resistance N-type GaN layer, the transmission of electronic selection shortest path, makes current crowding on shortest path, and the current ratio of the quantum well of flowing through is less, cause the higher problem of chip forward voltage drop, and make quantum well electric current homogenizing, improved brightness and light efficiency.
In Chinese patent CN103187497A, disclosed epitaxial structure can solve epitaxial structure of the prior art and makes the driving voltage of chip higher, injects electronics and the hole luminous efficiency step-down that is coupled and causes brightness problem on the low side.But the growth time of N-type GaN layer is longer in this structure, and can consume a large amount of trimethyl aluminiums as source material, complex process, preparation cost are high.
Utility model content
For this reason, the problem that to be solved in the utility model is GaN base epitaxial structure complex process in prior art, preparation cost is high, provides that a kind of technique is simple, preparation cost is low and can effectively reduce the LED epitaxial structure of forward voltage drop.
For solving the problems of the technologies described above, the technical solution adopted in the utility model is as follows:
A kind of LED epitaxial structure described in the utility model, is included in stack arranges successively substrate, resilient coating, U-shaped GaN layer, N-type GaN layer, multiple quantum well layer, P type GaN layer,
N-type GaN layer comprises the first N-type layer, the second N-type layer and the 3rd N-type layer, and each layer all further comprises GaN layer and the plain GaN layer of the doping Si being arranged alternately;
Described the first N-type layer thickness is 900～1000nm, and the GaN layer of described doping Si and the Thickness Ratio of described plain GaN layer are 2:1, and the doping content of Si is 7～8 × 10
18/ cm
3, alternate cycle is 15～20;
Described the second N-type layer thickness is 1300～1400nm, and the GaN layer of described doping Si and the Thickness Ratio of described plain GaN layer are 3:1, and the doping content of Si is 9～10 × 10
18/ cm
3, alternate cycle is 20～30;
Described the 3rd N-type layer thickness is 200～300nm, and the GaN layer of described doping Si and the Thickness Ratio of described plain GaN layer are 1:1, and the doping content of Si is 5～6 × 10
18/ cm
3, alternate cycle is 10～15;
Described the first N-type layer is near described resilient coating setting;
Between described multiple quantum well layer and described P type GaN layer, be also directly provided with U-shaped superlattice layer;
Described P type GaN layer comprises the Mg Doped GaN layer, Mg doped with Al InGaN layer, the Mg Doped GaN layer that set gradually.
Adulterate described in described the first N-type layer GaN layer of Si and the Thickness Ratio of described plain GaN layer is 2:1, adulterate described in described the second N-type layer GaN layer of Si and the Thickness Ratio of described plain GaN layer is 3:1, and described in described the 3rd N-type layer, adulterate the GaN layer of Si and the Thickness Ratio of described plain GaN layer are 1:1.
Described U-shaped superlattice layer is the Al being arranged alternately
xga
1-xn and GaN layer, alternate cycle is 4～8, monocycle thickness is 2～4nm, x=0.10～0.15.
Described multiple quantum well layer comprises the In being arranged alternately
xga
1-xn layer/GaN layer, In
xga
1-xthe thickness of N layer is 2～3nm, and the thickness of GaN layer is 8～10nm, and alternate cycle is 9～15, x=0.15～0.20.
Described in described P type GaN layer, the thickness of Mg Doped GaN layer is 30～40nm, and doping content is 7～8 × 10
16/ cm
3; The thickness of Mg doped with Al InGaN layer is 10～20nm, and doping content is 8～9 × 10
16/ cm
3; The thickness of Mg Doped GaN layer is 150～200nm, and doping content is 9～10 × 10
16/ cm
3.
Between described N-type GaN layer and described multiple quantum well layer, be also directly provided with shallow well layer, described shallow well layer comprises the InGaN layer/GaN layer being arranged alternately, and alternate cycle is that the thickness of 2～4, InGaN layer is 4～6nm, and the thickness of GaN layer is 30～36nm.
On described P type GaN layer, be also directly provided with ohmic contact layer, described ohmic contact layer is the InGaN layer of Mg doping, and thickness is 2～3nm.
Technique scheme of the present utility model has the following advantages compared to existing technology:
1, LED epitaxial structure described in the utility model, N-type GaN layer wherein adopts periodic grade doping structure, the GaN of the doping Si being arranged alternately and plain GaN layer can be at plain GaN strata set electrons, form highdensity two-dimensional electron gas, thereby effectively increase carrier concentration and mobility; The more important thing is, be arranged between U-shaped superlattice layer on multiple quantum well layer and N-type GaN layer and form many junction capacitance structure, can effectively strengthen the ability extending transversely of charge carrier, expand the CURRENT DISTRIBUTION area that flows into multiple quantum well layer, effectively reduce the driving voltage of LED.
In addition, doped structure in N-type GaN layer is simple, the number of plies is few, and superlattice layer more adopts the structure that undopes, and technique is simple, and cost of manufacture is low.
2, LED epitaxial structure described in the utility model, N-type GaN layer adopts the GaN of the doping Si being arranged alternately all very thin with the GaN layer thickness that undopes, and can effectively reduce dislocation defects, reduces the non-radiative recombination center of active area, thereby improves luminous efficiency.
3, LED epitaxial structure described in the utility model, contains Al component and can form barrier layer in U-shaped superlattice layer, can strengthen strengthening the effect extending transversely of charge carrier below P type layer, thereby reduce the work pressure drop of LED.
4, LED epitaxial structure described in the utility model, also be provided with shallow well layer, not only can improve the crystal mass of multiple quantum well layer, reduce the lattice mismatch between multiple quantum well layer and N-type GaN layer, reduce interfacial free energy between the two, can also reduce the polarization field in multiple quantum well layer, quantum luminous efficiency in improving, strengthens luminous intensity.
Brief description of the drawings
For content of the present utility model is more likely to be clearly understood, according to specific embodiment of the utility model also by reference to the accompanying drawings, the utility model is described in further detail, wherein below
Fig. 1 is LED epitaxial structure schematic diagram described in the utility model;
Fig. 2 is the operating voltage statistical chart of white light LEDs described in the utility model embodiment;
Fig. 3 is the operating voltage statistical chart of white light LEDs described in comparative example.
In figure, Reference numeral is expressed as: 1-substrate, 2-resilient coating, 3-U type GaN layer, 4-N type GaN layer, 5-multiple quantum well layer, 51-shallow well layer, 6-superlattice layer, 7-P type GaN layer, 8-ohmic contact layer.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with accompanying drawing, execution mode of the present utility model is described in further detail.
Embodiment
The utility model can be implemented in many different forms, and should not be understood to be limited to embodiment set forth herein.On the contrary, provide these embodiment, making the disclosure will be thorough and complete, and design of the present utility model fully will be conveyed to those skilled in the art, and the utility model will only be limited by claim.In the accompanying drawings, for clarity, can exaggerate layer and size and the relative size in region.Should be understood that, when for example layer of element be known as " being formed on " or " being arranged on " another element " on " time, this element can be set directly on described another element, or also can have intermediary element.On the contrary, in the time that element is known as on " being formed directly into " or " being set directly at " another element, there is not intermediary element.
The equipment that metal organic chemical vapor deposition technique described in following embodiment and comparative example adopts is for liking that purchased from Germany (English full name is Metal-organic Chemical Vapor Deposition to the metallo-organic compound chemical vapor deposition device of think of strong (Aixtron), referred to as MOCVD), model is Close coupled Showerhead(31X2'').
Carrier gas is high-purity H
2or high-purity N
2or both gaseous mixtures, metal organic source trimethyl gallium (TMGa) or triethyl-gallium (TEGa) are as gallium source, and trimethyl indium (TMIn) is as indium source, and trimethyl aluminium (TMAl) is as aluminium source, and N-type dopant is silane (SiH
4), P type dopant is two luxuriant magnesium (CP2Mg); Growth pressure arrives 650mbar at 100mbar.
The present embodiment provides a kind of LED epitaxial structure, comprises the substrate 1, resilient coating 2, U-shaped GaN layer 3, N-type GaN layer 4, multiple quantum well layer 5, the P type GaN layer 7 that set gradually in vertical direction.
Described N-type GaN4 comprises the first N-type layer, the second N-type layer and the 3rd N-type layer, and each layer all further comprises the GaN of the doping Si being arranged alternately and the GaN layer that undopes.
Described the first N-type layer arranges near described resilient coating 2, and thickness is 900～1000nm, and the doping content of Si is 7～8 × 10
18/ cm
3, alternate cycle is 15～20; In the present embodiment, described the first N-type layer thickness is preferably 950nm, and the GaN layer of described doping Si and the Thickness Ratio of described plain GaN layer are 2:1, and the doping content of Si is preferably 8 × 10
18/ cm
3, alternate cycle is preferably 18.
Described the second N-type layer thickness is 1300～1400nm, and the GaN layer of described doping Si and the Thickness Ratio of described plain GaN layer are 3:1, and the doping content of Si is 9～10 × 10
18/ cm
3, alternate cycle is 20～30; In the present embodiment, described the second N-type layer thickness is preferably 1400nm, and the doping content of Si is preferably 10 × 10
18/ cm
3, alternate cycle is preferably 25.
Described the 3rd N-type layer thickness is 200～300nm, and the GaN layer of described doping Si and the Thickness Ratio of described plain GaN layer are 1:1, and the doping content of Si is 5～6 × 10
18/ cm
3, alternate cycle is 10～15; In the present embodiment, described the 3rd N-type layer thickness is preferably 200nm, and the doping content of Si is preferably 6 × 10
18/ cm
3, alternate cycle is preferably 12.
Between described multiple quantum well layer 5 and described P type GaN layer 7, be also directly provided with U-shaped superlattice layer 6; The Al that described superlattice layer 6 is preferably arranged alternately
xga
1-xn and GaN layer, alternate cycle is 4～8, monocycle thickness is 2～4nm, x=0.10～0.15; In the present embodiment, described Al
xga
1-xn layer is preferably Al
0.12ga
0.88n layer, the thickness that thickness is preferably 2nm, described GaN layer is preferably 2nm, and alternate cycle is preferably 6.
N-type GaN layer 4 adopts periodic grade doping structure, and the GaN of the doping Si being arranged alternately in proportion and the GaN layer that undopes can, at plain GaN strata set electron, form highdensity two-dimensional electron gas, thereby effectively increase carrier concentration and mobility; The more important thing is, be arranged between U-shaped superlattice layer 6 on multiple quantum well layer 5 and N-type GaN layer 4 and form many junction capacitance structure, can effectively strengthen the ability extending transversely of charge carrier, expand the CURRENT DISTRIBUTION area that flows into multiple quantum well layer 5, effectively reduce the driving voltage of LED.
Described P type GaN layer 7 comprises the Mg Doped GaN layer, Mg doped with Al InGaN layer, the Mg Doped GaN layer that set gradually.Described in described P type GaN layer 7, the thickness of Mg Doped GaN layer is 30～40nm, and doping content is 7～8 × 10
16/ cm
3, the present embodiment preferred thickness is 36nm, preferably doping content is 8 × 10
16/ cm
3; The thickness of Mg doped with Al InGaN layer is 10～20nm, and doping content is 8～9 × 10
16/ cm
3, the present embodiment preferred thickness is 18nm, preferably doping content is 9 × 10
16/ cm
3; The thickness of Mg Doped GaN layer is 150～200nm, and doping content is 9～10 × 10
16/ cm
3, the present embodiment preferred thickness is 200nm, preferably doping content is 1 × 10
17/ cm
3.
Described multiple quantum well layer 5 comprises the In being arranged alternately
xga
1-xn layer/GaN layer, In
xga
1-xthe thickness of N layer is 2～3nm, and the thickness of GaN layer is 8～10nm, and alternate cycle is 9～15, x=0.15～0.20; In described in the present embodiment
xga
1-xn layer is preferably In
0.2ga
0.8n layer, thickness is preferably 3nm, and the thickness of GaN layer is preferably 10nm, and alternate cycle is preferably 13.
Between described N-type GaN layer 4 and described multiple quantum well layer 5, be also directly provided with shallow well layer 51, described shallow well layer 51 comprises the InGaN layer/GaN layer being arranged alternately, alternate cycle is 2～4, and in described shallow well layer 51, the thickness of InGaN layer is 4～6nm, and the thickness of GaN layer is 30～36nm; In the present embodiment, the thickness of described InGaN layer is preferably 5nm, and the thickness of GaN layer is preferably 32nm, alternate cycle preferably 3.
Described shallow well layer 51 not only can improve the crystal mass of multiple quantum well layer, reduce the lattice mismatch between multiple quantum well layer 5 and N-type GaN layer 4, to reduce interfacial free energy between the two, can also reduce the polarization field in multiple quantum well layer 5, quantum luminous efficiency in improving, strengthens luminous intensity.
On described P type GaN layer 7, be also directly provided with ohmic contact layer 8, described ohmic contact layer 8 is the InGaN layer of Mg doping, and thickness is 2～3nm; The present embodiment preferred thickness is 3nm, and preferably doping content is 1 × 10
18/ cm
3.
The preparation method of described a kind of LED epitaxial structure, comprises the steps:
S1, along the vertical direction of substrate 1 successively on substrate 1 directly by metal organic chemical vapor deposition technique grown buffer layer 2, described resilient coating 2 is GaN layer, thickness is 24nm, growth temperature is 650 DEG C, by the metal organic chemical vapor deposition technique U-shaped GaN layer 3 of growing, thickness is 2400nm, and growth temperature is 1020 DEG C.
As other embodiment of the present utility model; the growth temperature of described resilient coating 2 can also be 600～680 DEG C; thickness is 20～30nm; the growth temperature of described U-shaped GaN layer 3 can also be 1010～1030 DEG C; thickness is 2000～2500nm; all can realize the purpose of this utility model, belong to protection range of the present utility model.
S2, by metal organic chemical vapor deposition technique, on U-shaped GaN layer 3, directly form N-type GaN layer 4, grow successively the first N-type layer, the second N-type layer and the 3rd N-type layer, each layer all further comprises GaN layer and the plain GaN layer of the doping Si of alternating growth successively, growth temperature is 1025 DEG C
As other embodiment of the present utility model, the growth temperature of described N-type GaN layer 4 can also be 1020～1030 DEG C, all can realize the purpose of this utility model, belongs to protection range of the present utility model.
S3, by metal organic chemical vapor deposition technique, on N-type GaN layer 4, form multiple quantum well layer 5, the In being arranged alternately
xga
1-xn layer/GaN layer, In
xga
1-xthe growth temperature of N layer is 750 DEG C; The growth temperature of GaN layer is 840 DEG C; As other embodiment of the present utility model, described In
xga
1-xn layer growth temperature can also be 740～760 DEG C, and the growth temperature of GaN layer is 830～850 DEG C, all can realize the purpose of this utility model, belongs to protection range of the present utility model.
S4, by metal organic chemical vapor deposition technique, U-shaped superlattice layer 6, described Al are directly set on described multiple quantum well layer 5
0.12ga
0.88the growth temperature of N layer can be 960～970 DEG C, preferably 965 DEG C of the present embodiment; The growth temperature of described GaN layer can be 960～970 DEG C, preferably 965 DEG C of the present embodiment.
S5, by metal organic chemical vapor deposition technique, on multiple quantum well layer 5, form P type GaN layer 7, successively at the GaN layer of the low temperature Mg doping of 810～840 DEG C of growths, at the Mg of 860～890 DEG C of growths doped with Al InGaN layer with at the high temperature Mg of 920～980 DEG C of growths Doped GaN layer; In the present embodiment, preferably 950 DEG C of the growth temperatures of preferably 820 DEG C of the growth temperatures of the GaN layer of described low temperature Mg doping, preferably 870 DEG C of the growth temperatures of described Mg doped with Al InGaN layer, described high temperature Mg Doped GaN layer.
Step S3 also comprises by metal organic chemical vapor deposition technique, directly forms shallow well layer 51 on N-type GaN layer 4, i.e. alternating growth InGaN layer and GaN layer successively, and it is 816 DEG C that growth temperature is; Growth temperature can also be 810～820 DEG C, all can realize the purpose of this utility model, belongs to protection range of the present utility model.
After step S5, be also included in the step that directly forms ohmic contact layer 8 on described P type GaN layer 7, the Mg doping InGaN layer of described ohmic contact layer 8 for preparing by metal organic chemical vapor deposition technique, formation temperature is 910～930 DEG C, and the present embodiment is preferably 920 DEG C; Thickness is 2～4nm, and the present embodiment is preferably 3nm; Doping content is 9～10 × 10
17/ cm
3, the present embodiment is preferably 1 × 10
18/ cm
3.
The preparation method of LED epitaxial structure described in the utility model, doped structure in N-type GaN layer 4 is simple, the number of plies is few; And superlattice layer 6 more adopts the structure that undopes, technique is simple, and cost of manufacture is low.
Described LED epitaxial structure is prepared to white light LEDs by prior art, is specially:
Step 1: by photoetching and lithographic technique, to carrying out N utmost point etching on described LED epitaxial structure, to expose N-type GaN layer 4; And then on described ohmic contact layer and on N-type GaN layer 4, form ITO(indium tin oxide by magnetron sputtering technique) layer, thickness is 200nm, and carries out patterning by photoetching and lithographic technique.
Comparative example
The white light LEDs that this comparative example provides a kind of LED epitaxial structure and prepared by this epitaxial structure, the preparation method of described LED epitaxial structure is with the embodiment part in Chinese patent document CN103187497A, and the preparation method of white light LEDs is with embodiment 1.
By electroluminescence testing equipment (Taiwan Hui Te science and technology, model is IPT6000), to respectively the white light LEDs described in embodiment and comparative example being tested, the operating voltage that test obtains respectively as shown in Figures 2 and 3.
From figure, data can be found out, the prepared white light LEDs operating voltage mean value of LED epitaxial structure described in the utility model is 2.88V, and the operating voltage mean value of the white light LEDs described in comparative example is 3.41V, compared with comparative example, LED epitaxial structure provided by the utility model can effectively reduce the operating voltage of LED, decreases by 15.5%.
Obviously, above-described embodiment is only for example is clearly described, and the not restriction to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here without also giving exhaustive to all execution modes.And the apparent variation of being extended out thus or variation are still among protection range of the present utility model.
Claims (7)
1. a LED epitaxial structure, is included in stack arranges successively substrate, resilient coating, U-shaped GaN layer, N-type GaN layer, multiple quantum well layer, P type GaN layer, it is characterized in that,
N-type GaN layer comprises the first N-type layer, the second N-type layer and the 3rd N-type layer, and each layer all further comprises GaN layer and the plain GaN layer of the doping Si being arranged alternately;
Described the first N-type layer thickness is 900～1000nm, and the GaN layer of described doping Si and the Thickness Ratio of described plain GaN layer are 2:1, and alternate cycle is 15～20;
Described the second N-type layer thickness is 1300～1400nm, and the GaN layer of described doping Si and the Thickness Ratio of described plain GaN layer are 3:1, and alternate cycle is 20～30;
Described the 3rd N-type layer thickness is 200～300nm, and the GaN layer of described doping Si and the Thickness Ratio of described plain GaN layer are 1:1, and alternate cycle is 10～15;
Described the first N-type layer is near described resilient coating setting;
Between described multiple quantum well layer and described P type GaN layer, be also directly provided with U-shaped superlattice layer;
Described P type GaN layer comprises the Mg Doped GaN layer, Mg doped with Al InGaN layer, the Mg Doped GaN layer that set gradually.
2. LED epitaxial structure according to claim 1, is characterized in that, described U-shaped superlattice layer is the Al being arranged alternately
xga
1-xn and GaN layer, alternate cycle is 4～8, monocycle thickness is 2～4nm, x=0.10～0.15.
3. LED epitaxial structure according to claim 1, it is characterized in that, adulterate described in described the first N-type layer GaN layer of Si and the Thickness Ratio of described plain GaN layer is 2:1, adulterate described in described the second N-type layer GaN layer of Si and the Thickness Ratio of described plain GaN layer is 3:1, and described in described the 3rd N-type layer, adulterate the GaN layer of Si and the Thickness Ratio of described plain GaN layer are 1:1.
4. according to the arbitrary described LED epitaxial structure of claim 1-3, it is characterized in that, described multiple quantum well layer comprises the In being arranged alternately
xga
1-xn layer/GaN layer, In
xga
1-xthe thickness of N layer is 2～3nm, and the thickness of GaN layer is 8～10nm, and alternate cycle is 9～15, x=0.15～0.20.
5. LED epitaxial structure according to claim 4, is characterized in that, described in described P type GaN layer, the thickness of Mg Doped GaN layer is 30～40nm; The thickness of Mg doped with Al InGaN layer is 10～20nm; The thickness of Mg Doped GaN layer is 150～200nm.
6. LED epitaxial structure according to claim 5, it is characterized in that, between described N-type GaN layer and described multiple quantum well layer, be also directly provided with shallow well layer, described shallow well layer comprises the InGaN layer/GaN layer being arranged alternately, alternate cycle is 2～4, the thickness of InGaN layer is 4～6nm, and the thickness of GaN layer is 30～36nm.
7. LED epitaxial structure according to claim 6, is characterized in that, on described P type GaN layer, is also directly provided with ohmic contact layer, and described ohmic contact layer is the InGaN layer of Mg doping, and thickness is 2～3nm.
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|---|---|---|---|
| CN201320657752.6U CN203659911U (en) | 2013-10-23 | 2013-10-23 | LED epitaxial structure |
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|---|---|---|---|
| CN201320657752.6U CN203659911U (en) | 2013-10-23 | 2013-10-23 | LED epitaxial structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103531680A (en) * | 2013-10-23 | 2014-01-22 | 苏州矩阵光电有限公司 | LED epitaxy structure and preparation method thereof |
| CN106299049A (en) * | 2015-06-09 | 2017-01-04 | 南通同方半导体有限公司 | A kind of blue-ray LED epitaxial structure improving antistatic effect |
-
2013
- 2013-10-23 CN CN201320657752.6U patent/CN203659911U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103531680A (en) * | 2013-10-23 | 2014-01-22 | 苏州矩阵光电有限公司 | LED epitaxy structure and preparation method thereof |
| CN103531680B (en) * | 2013-10-23 | 2016-03-02 | 苏州矩阵光电有限公司 | A kind of LED epitaxial structure and preparation method thereof |
| CN106299049A (en) * | 2015-06-09 | 2017-01-04 | 南通同方半导体有限公司 | A kind of blue-ray LED epitaxial structure improving antistatic effect |
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