CN104993027B - LED epitaxial slice and preparation method thereof - Google Patents
LED epitaxial slice and preparation method thereof Download PDFInfo
- Publication number
- CN104993027B CN104993027B CN201510372561.9A CN201510372561A CN104993027B CN 104993027 B CN104993027 B CN 104993027B CN 201510372561 A CN201510372561 A CN 201510372561A CN 104993027 B CN104993027 B CN 104993027B
- Authority
- CN
- China
- Prior art keywords
- algan
- sublayers
- gan
- layer
- content
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
Abstract
The invention discloses a kind of LED epitaxial slice and preparation method thereof, belong to light emitting diode field.The LED epitaxial slice includes substrate, sequentially forms non-doped layer, N-type layer, N-type current extending, multiple quantum well layer and P-type layer over the substrate, the N-type current extending includes AlGaN/n GaN superlattice structures, the direction of growth of the Al of the AlGaN sublayers content along the epitaxial wafer successively increases in the AlGaN/n GaN superlattice structures, and Al content is 10% -80% in the AlGaN sublayers.
Description
Technical field
The present invention relates to light emitting diode field, more particularly to a kind of LED epitaxial slice and preparation method thereof.
Background technology
New products of the LED as great influence power in photoelectronic industry, LED have that small volume, service life are long, color is rich
The features such as rich colorful, energy consumption is low, it is widely used in the fields such as illumination, display screen, signal lamp, backlight, toy.General LED master
To be made up of support, elargol, chip, gold thread and epoxy resin.Wherein, chip is LED core component, and it is passed through by epitaxial wafer
Multiple working procedure is crossed to be process.Therefore, the structures shape of epitaxial wafer LED quality.
Traditional GaN base epitaxial wafer growth method is to grow undoped GaN layer, N-type layer, Multiple-quantum successively in substrate layer
Well layer and P-type layer.Wherein, N-type layer provides layer for main electronics, and P-type layer provides layer for main hole, and electronics, hole exist
Multiquantum well region carries out radiation recombination, sends photon and releases energy.Multiple quantum well layer is by quantum well layer, quantum barrier layer alternating growth
Formed, be the core of light emitting diode, also referred to as active area.
During the present invention is realized, inventor has found that prior art at least has problems with：
In traditional GaN base epitaxial wafer, the electronics of the N-type layer current expansion when entering active area is insufficient, influences extension
Piece luminous efficiency.
The content of the invention
In order to solve the problems, such as that epitaxial wafer current expansion is insufficient in the prior art, the embodiments of the invention provide one kind to send out
Optical diode epitaxial wafer and preparation method thereof.The technical scheme is as follows：
On the one hand, the embodiments of the invention provide a kind of LED epitaxial slice, including substrate, be sequentially formed at it is described
Non-doped layer, N-type layer, N-type current extending, multiple quantum well layer and P-type layer on substrate；
The N-type current extending includes AlGaN/n-GaN superlattice structures, the AlGaN/n-GaN superlattice structures
The direction of growth of the Al of the middle AlGaN sublayers content along the epitaxial wafer successively increases, and Al content is in the AlGaN sublayers
10% -80%, the Al of the AlGaN sublayer nearest apart from the substrate content are 20%, and described in adjacent two
The Al of AlGaN sublayers content difference is 10%.
In another implementation of the embodiment of the present invention, AlGaN sublayers in the AlGaN/n-GaN superlattice structures
Thickness be 15nm, the thickness of n-GaN sublayers is 15nm in the AlGaN/n-GaN superlattice structures.
In another implementation of the embodiment of the present invention, the N-type current extending includes the AlGaN/ in 6 cycles
N-GaN superlattice structures.
In another implementation of the embodiment of the present invention, total electron concentration of the N-type current extending for 3 ×
1018cm-3。
On the other hand, the embodiment of the present invention additionally provides a kind of LED epitaxial slice preparation method, methods described bag
Include：
One substrate is provided；
Grow non-doped layer, N-type layer, N-type current extending, multiple quantum well layer and P-type layer, institute over the substrate successively
Stating N-type current extending includes AlGaN/n-GaN superlattice structures, AlGaN sublayers in the AlGaN/n-GaN superlattice structures
The Al direction of growth of the content along the epitaxial wafer successively increase, and Al content is by solid in each AlGaN sublayers
Determining difference increases, and Al content is 10% -80% in the AlGaN sublayers, the AlGaN nearest apart from substrate
The Al of layer content is 20%, and the Al of adjacent two AlGaN sublayers content difference is 10%.
In another implementation of the embodiment of the present invention, AlGaN sublayers in the AlGaN/n-GaN superlattice structures
Thickness be 15nm, the thickness of n-GaN sublayers is 15nm in the AlGaN/n-GaN superlattice structures.
In another implementation of the embodiment of the present invention, the N-type current extending includes the AlGaN/ in 6 cycles
N-GaN superlattice structures.
In another implementation of the embodiment of the present invention, total electron concentration of the N-type current extending for 3 ×
1018cm-3。
The beneficial effect that technical scheme provided in an embodiment of the present invention is brought is：First, N-type layer and multiple quantum well layer it
Between set AlGaN/n-GaN superlattice structures to be used as N-type current extending, AlGaN sublayers can band height, and n-GaN sublayer energy bands
It is low, therefore the superlattice structure being made up of AlGaN sublayers and n-GaN sublayers has the alternate band structure of a height, electronics
It is extending transversely when by the AlGaN sublayers of high energy band, and by low-energy zone n-GaN sublayers when assembled, through excessive
It can ensure that electronics is fully extended before multiple quantum well layer is entered after secondary aggregation and extension.Secondly, AlGaN/n-GaN surpasses
The direction of growth of the Al of the AlGaN sublayers content along epitaxial wafer successively increases in lattice structure, and Al content is maintained at 10%-
It is relatively low in the Al of the AlGaN sublayers close to N-type layer side content between 80%, compared with the AlGaN sublayers and N-type of low al content
The lattice constant difference of layer is smaller, so as to avoid lattice mismatch, and close to the Al of the AlGaN sublayers of multiple quantum well layer side
Content is higher, ensure that the abundant extension of electronics.In addition, AlGaN sublayers and n-GaN sublayer groups are used in embodiments of the present invention
Into superlattice structure, advantage is that AlGaN and n-GaN lattice constants are close, and differing larger compared to other lattice constants surpasses
Lattice structure (such as AlGaN/InGaN superlattices), reduce lattice and mismatch the defects of introducing, so as to improve LED
Crystal mass.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, make required in being described below to embodiment
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, on the premise of not paying creative work, other can also be obtained according to these accompanying drawings
Accompanying drawing.
Fig. 1 is a kind of structural representation of LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is a kind of flow chart of the preparation method of LED epitaxial slice provided in an embodiment of the present invention.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
Fig. 1 is a kind of structural representation of LED epitaxial slice provided in an embodiment of the present invention, referring to Fig. 1, the hair
Optical diode epitaxial wafer includes substrate 101, the non-doped layer 102 being sequentially formed on the substrate 101, N-type layer 103, N-type electricity
Flow extension layer 104, multiple quantum well layer 105 and P-type layer 106.
The N-type current extending 104 includes AlGaN/n-GaN superlattice structures, the AlGaN/n-GaN superlattices knot
The direction of growth of the Al of the AlGaN sublayers content along the epitaxial wafer successively increases in structure, Al content in the AlGaN sublayers
For 10% -80%.
Wherein, AlGaN sublayers are non-impurity-doped layer, and n-GaN sublayers are the GaN layer of the element dopings such as Si or Ge.First, exist
AlGaN/n-GaN superlattice structures are set between N-type layer and multiple quantum well layer as N-type current extending, AlGaN sublayer energy bands
Height, and n-GaN sublayers can be with low, therefore the superlattice structure being made up of AlGaN sublayers and n-GaN sublayers has a high low phase
Between band structure, electronics by high energy band AlGaN sublayers when it is extending transversely, and by low-energy zone n-GaN sublayers when
Assembled, can ensure that electronics is fully extended before multiple quantum well layer is entered after repeatedly aggregation and extension.
Secondly, the direction of growth of the Al of the AlGaN sublayers content along epitaxial wafer successively increases in AlGaN/n-GaN superlattice structures, and
Al content is maintained between 10%-80%, and relatively low in the Al of the AlGaN sublayers close to N-type layer side content, relatively low Al contains
The AlGaN sublayers of amount differ smaller with the lattice constant of N-type layer, so as to avoid lattice mismatch, and close to multiple quantum well layer one
The Al of the AlGaN sublayers of side content is higher, ensure that the abundant extension of electronics.In addition, use in embodiments of the present invention
AlGaN sublayers and n-GaN sublayers composition superlattice structure, advantage is that AlGaN and n-GaN lattice constants are close, compared to it
He differs larger superlattice structure (such as AlGaN/InGaN superlattices) at lattice constant, reduces lattice and mismatches lacking for introducing
Fall into, so as to improve the crystal mass of LED.
Preferably, the Al of the AlGaN sublayer nearest apart from the substrate 101 content is 20%, adjacent two
The Al of AlGaN sublayers content difference is 10%.Above-mentioned preferred parameter, AlGaN sublayers and N compared with low al content can make it that
The lattice constant difference of type layer is smaller, and so as to avoid lattice mismatch, and can causes the extension of the AlGaN sublayers of higher Al content
Effect, ensure that the abundant extension of electronics.
Specifically, in embodiments of the present invention, the thickness of the AlGaN sublayers in N-type current extending 104 and n-GaN sublayers
Degree can be with identical, can also be different；The thickness of each layer AlGaN sublayers or n-GaN sublayers can be with identical, can also be different.
Preferably, the thickness of each AlGaN sublayers and each n-GaN sublayers is homogeneous in AlGaN/n-GaN superlattice structures
Deng, and the thickness of each AlGaN sublayers and each n-GaN sublayers is 15nm.Certainly, each AlGaN sublayers and each in practice
The thickness of individual n-GaN sublayers can be set according to needs of production.
Specifically, in embodiments of the present invention, AlGaN/n-GaN of the N-type current extending 104 including 2-20 cycle surpasses
Lattice structure, and both can be AlGaN sublayers in each cycle closer to N-type layer or n-GaN sublayers closer to N-type
Layer.In addition, according to the difference of AlGaN/n-GaN superlattice structures periodicity in N-type current extending 104, N-type current extending
104 gross thickness is between 0.1~0.8 μm.
Preferably, the N-type current extending 104 includes the AlGaN/n-GaN superlattice structures in 6 cycles.When each
When the thickness of AlGaN sublayers and each n-GaN sublayers is 15nm, now the thickness of N-type current extending 104 is 0.18 μm.
Specifically, in embodiments of the present invention, electron concentration can be with each n-GaN sublayers in N-type current extending 104
It is identical, can also be different.
Specifically, in embodiments of the present invention, total electron concentration of N-type current extending 104 is 1017-1019cm-3Between
Regulation.Preferably, total electron concentration of N-type current extending 104 is 3 × 1018cm-3。
Fig. 2 is a kind of flow chart of the preparation method of LED epitaxial slice provided in an embodiment of the present invention, this method
The epitaxial wafer provided for making Fig. 1, referring to Fig. 2, this method includes：
Step 201：One substrate is provided.
Specifically, substrate can be Sapphire Substrate, silicon substrate or silicon carbide substrates.
Step 202：In Grown non-doped layer.
Specifically, non-doped layer is undoped GaN layer, and undoped GaN layer can be composite bed, including low temperature buffer
Sublayer and undoped GaN sublayers.
Specifically, at a temperature of 540 DEG C, in the GaN that Grown a layer thickness is 30nm as low temperature buffer sublayer.
Temperature is risen to 1100 DEG C or so, the undoped GaN sublayers that a layer thickness is about 3 μm are grown on low temperature buffer layer.
It is readily apparent that, before this step, this method can also include：Clean substrate surface.Specifically, substrate is existed
1100 DEG C of H2Heat treatment 8 minutes, clean surface are carried out under atmosphere.
Step 203：N-type layer is grown on non-doped layer.
Specifically, the N-GaN for the Si doping that a layer thickness is about 1 μm is grown in undoped GaN layer, that is, is obtained above-mentioned
N-type layer.It is readily apparent that, N-type layer can also use other doping, however it is not limited to which Si is adulterated.
Specifically, the preparation temperature of N-type layer is at 1100 DEG C or so.
Specifically, the electron concentration of N-type layer is about 2 × 1019cm-3。
Step 204：N-type current extending is grown in N-type layer.
Specifically, step 204 can use following manner：
Step 1: at 1100 DEG C or so, in NH3Ga sources, Al sources are passed through under atmosphere, continues 30s, grows AlGaN sublayers；Step
Rapid two, Al sources are closed, are passed through silane, continue 30s, grow n-GaN sublayers.Alternately step 1 and step 2 2~20 times, it is complete
Into the growth of N-type current extending.
In the present embodiment, the step 1 duration is 30s, and the thickness of each AlGaN sublayer is about 15nm；Step 2
Duration is 30s, and the thickness of each n-GaN sublayer is about 15nm.Preferably, the number of above-mentioned steps one and step 2 is excellent
Elect as 6 times, the thickness of N-type current extending is 0.18 μm.
It is readily apparent that, step 2 can also be first carried out in embodiments of the present invention and perform step 1 again.
In addition, in the embodiment of the present invention, the structure of N-type current extending with it is hereinbefore identical, do not repeat here.
Step 205：Multiple quantum well layer is grown on N-type current extending.
Specifically, alternating growth Floor 12 quantum well layer and Floor 12 quantum barrier layer on N-type current extending.SQW
The thickness of layer is 3nm, and using InGaN as growth material, growth temperature is 790 DEG C.The thickness of quantum barrier layer is 12nm, is used
For GaN as growth material, growth temperature is 920 DEG C.
Step 206：The growing P-type layer on multiple quantum well layer.
Specifically, the P-type layer that a layer thickness is about 200nm is grown on multiple quantum well layer.
Specifically, P-type layer can be composite bed, including p-type AlGaN electronic barrier layers, p-type GaN layer and p-type GaN contacts
Layer.
In the specific implementation, the embodiment of the present invention can use high-purity H2Or N2As carrier gas, TEGa/ is respectively adopted
TMGa, TMAl, TMIn and NH3As Ga sources, Al sources, In sources and N sources, SiH is respectively adopted4And Cp2Mg adulterates as N-type and p-type
Agent, epitaxial wafer growth is completed using equipment of metal organic chemical vapor deposition or other equipment.
The beneficial effect that technical scheme provided in an embodiment of the present invention is brought is：First, N-type layer and multiple quantum well layer it
Between set AlGaN/n-GaN superlattice structures to be used as N-type current extending, AlGaN sublayers can band height, and n-GaN sublayer energy bands
It is low, therefore the superlattice structure being made up of AlGaN sublayers and n-GaN sublayers has the alternate band structure of a height, electronics
It is extending transversely when by the AlGaN sublayers of high energy band, and by low-energy zone n-GaN sublayers when assembled, through excessive
It can ensure that electronics is fully extended before multiple quantum well layer is entered after secondary aggregation and extension.Secondly, AlGaN/n-GaN surpasses
The direction of growth of the Al of the AlGaN sublayers content along epitaxial wafer successively increases in lattice structure, and Al content is maintained at 10%-
It is relatively low in the Al of the AlGaN sublayers close to N-type layer side content between 80%, compared with the AlGaN sublayers and N-type of low al content
The lattice constant difference of layer is smaller, so as to avoid lattice mismatch, and close to the Al of the AlGaN sublayers of multiple quantum well layer side
Content is higher, ensure that the abundant extension of electronics.In addition, AlGaN sublayers and n-GaN sublayer groups are used in embodiments of the present invention
Into superlattice structure, advantage is that AlGaN and n-GaN lattice constants are close, and differing larger compared to other lattice constants surpasses
Lattice structure (such as AlGaN/InGaN superlattices), reduce lattice and mismatch the defects of introducing, so as to improve LED
Crystal mass.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc., it should be included in the scope of the protection.
Claims (8)
1. a kind of LED epitaxial slice, including substrate, sequentially form non-doped layer over the substrate, N-type layer, N-type
Current extending, multiple quantum well layer and P-type layer, it is characterised in that
The N-type current extending includes AlGaN/n-GaN superlattice structures, in the AlGaN/n-GaN superlattice structures
The direction of growth of the Al of the AlGaN sublayers content along the epitaxial wafer successively increases, and Al content is in the AlGaN sublayers
10% -80%, the Al of the AlGaN sublayer nearest apart from the substrate content are 20%, and described in adjacent two
The Al of AlGaN sublayers content difference is 10%.
2. LED epitaxial slice according to claim 1, it is characterised in that the AlGaN/n-GaN superlattices knot
The thickness of AlGaN sublayers is 15nm in structure, and the thickness of n-GaN sublayers is 15nm in the AlGaN/n-GaN superlattice structures.
3. LED epitaxial slice according to claim 1, it is characterised in that the N-type current extending includes 6
The AlGaN/n-GaN superlattice structures in cycle.
4. LED epitaxial slice according to claim 1, it is characterised in that total electricity of the N-type current extending
Sub- concentration is 3 × 1018cm-3。
5. a kind of LED epitaxial slice preparation method, it is characterised in that methods described includes：
One substrate is provided；
Grow non-doped layer, N-type layer, N-type current extending, multiple quantum well layer and P-type layer, the N over the substrate successively
Type current extending includes AlGaN/n-GaN superlattice structures, AlGaN sublayers in the AlGaN/n-GaN superlattice structures
The direction of growth of the Al content along the epitaxial wafer successively increases, and Al content is 10% -80% in the AlGaN sublayers, away from
The Al of the AlGaN sublayer nearest from substrate content is 20%, and the Al of adjacent two AlGaN sublayers
Content difference is 10%.
6. according to the method for claim 5, it is characterised in that AlGaN sublayers in the AlGaN/n-GaN superlattice structures
Thickness be 15nm, the thickness of n-GaN sublayers is 15nm in the AlGaN/n-GaN superlattice structures.
7. according to the method for claim 5, it is characterised in that the N-type current extending includes the AlGaN/ in 6 cycles
N-GaN superlattice structures.
8. according to the method for claim 5, it is characterised in that total electron concentration of the N-type current extending be 3 ×
1018cm-3。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510372561.9A CN104993027B (en) | 2015-06-30 | 2015-06-30 | LED epitaxial slice and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510372561.9A CN104993027B (en) | 2015-06-30 | 2015-06-30 | LED epitaxial slice and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104993027A CN104993027A (en) | 2015-10-21 |
| CN104993027B true CN104993027B (en) | 2018-03-06 |
Family
ID=54304811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510372561.9A Active CN104993027B (en) | 2015-06-30 | 2015-06-30 | LED epitaxial slice and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104993027B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514234A (en) * | 2015-12-14 | 2016-04-20 | 安徽三安光电有限公司 | Nitride light emitting diode and growth method thereof |
| CN105552178B (en) * | 2016-01-20 | 2017-11-14 | 华灿光电(苏州）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
| CN105679901B (en) * | 2016-03-04 | 2017-12-15 | 华灿光电股份有限公司 | LED epitaxial slice and preparation method thereof |
| CN107919417A (en) * | 2016-10-09 | 2018-04-17 | 比亚迪股份有限公司 | Light emitting diode and preparation method thereof |
| CN114335278B (en) * | 2022-03-16 | 2022-08-05 | 至芯半导体(杭州)有限公司 | Epitaxial structure of UVB chip and application thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709424A (en) * | 2012-06-11 | 2012-10-03 | 华灿光电股份有限公司 | Method for improving luminous efficiency of light-emitting diode |
| CN103187497A (en) * | 2013-01-28 | 2013-07-03 | 上海博恩世通光电股份有限公司 | Epitaxial structure capable of improving light effect of large-sized chip and growing method thereof |
| CN104659170A (en) * | 2015-01-29 | 2015-05-27 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
-
2015
- 2015-06-30 CN CN201510372561.9A patent/CN104993027B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709424A (en) * | 2012-06-11 | 2012-10-03 | 华灿光电股份有限公司 | Method for improving luminous efficiency of light-emitting diode |
| CN103187497A (en) * | 2013-01-28 | 2013-07-03 | 上海博恩世通光电股份有限公司 | Epitaxial structure capable of improving light effect of large-sized chip and growing method thereof |
| CN104659170A (en) * | 2015-01-29 | 2015-05-27 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104993027A (en) | 2015-10-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10276744B2 (en) | Light-emitting diode epitaxial wafer and method for preparing the same | |
| CN104993027B (en) | LED epitaxial slice and preparation method thereof | |
| CN106784216B (en) | A kind of epitaxial wafer and its growing method of GaN base light emitting | |
| CN105070805B (en) | Silicon-based nitride ultraviolet LED epitaxial structure and implementation method thereof | |
| CN102760808B (en) | A kind of epitaxial wafer of light-emitting diode and manufacture method thereof | |
| CN105449051B (en) | One kind is using MOCVD technologies in GaN substrate or GaN/Al2O3The method that high brightness homogeneity LED is prepared in compound substrate | |
| CN103035805B (en) | A kind of LED epitaxial slice and its preparation method | |
| CN103531680A (en) | LED epitaxy structure and preparation method thereof | |
| CN104362233A (en) | Epitaxial slice of GaN-based light emitting diode (LED) and preparation method thereof | |
| CN103811601B (en) | A kind of GaN base LED multi-level buffer layer growth method with Sapphire Substrate as substrate | |
| CN103346226B (en) | LED epitaxial structure and growing method thereof | |
| CN102738328B (en) | Epitaxial wafer of light-emitting diode and manufacturing method thereof | |
| JP5383880B1 (en) | Nitride semiconductor layer manufacturing method and semiconductor light emitting device manufacturing method | |
| CN104681676B (en) | A kind of LED epitaxial slice | |
| CN106653970A (en) | Epitaxial wafer of light-emitting diode and growth method thereof | |
| CN103107255A (en) | Growth method of light-emitting diode (LED) epitaxial wafer | |
| CN106653971A (en) | Epitaxial wafer for GaN-based light-emitting diode, and growth method for epitaxial wafer | |
| CN103985797B (en) | Multi-quantum pit structure and growing method thereof and there is the LED chip of this structure | |
| CN104300064A (en) | Epitaxial wafer of GaN-based light-emitting diode and preparing method thereof | |
| CN103456852B (en) | A kind of LED and preparation method | |
| CN206003801U (en) | A kind of epitaxial wafer for flip LED chips | |
| CN108878608A (en) | A kind of InGaN quantum dot LED epitaxial structure reducing structure with strain | |
| CN102931302B (en) | Blue and green diode epitaxial slice and manufacturing method thereof | |
| CN103035790B (en) | A kind of LED epitaxial slice and its preparation method | |
| CN104733576B (en) | LED epitaxial slice and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |