CN106601885A - Light emitting diode epitaxial structure and growth method thereof - Google Patents

Light emitting diode epitaxial structure and growth method thereof Download PDF

Info

Publication number
CN106601885A
CN106601885A CN201611167259.0A CN201611167259A CN106601885A CN 106601885 A CN106601885 A CN 106601885A CN 201611167259 A CN201611167259 A CN 201611167259A CN 106601885 A CN106601885 A CN 106601885A
Authority
CN
China
Prior art keywords
type
layer
doping
heavy
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201611167259.0A
Other languages
Chinese (zh)
Inventor
汪洋
林志伟
童吉楚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xiamen Changelight Co Ltd
Original Assignee
Xiamen Changelight Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xiamen Changelight Co Ltd filed Critical Xiamen Changelight Co Ltd
Priority to CN201611167259.0A priority Critical patent/CN106601885A/en
Publication of CN106601885A publication Critical patent/CN106601885A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The invention discloses a light emitting diode epitaxial structure. An N-type layer is grown on a surface of a substrate, a V-type defect pit is formed on a surface of the N-type layer, an active layer is grown on the N-type layer on which the V-type defect pit is formed, an opening form and opening depth of the V-type defect pit are kept on the active layer, a P-type layer is grown on the active layer, and the V-type defect pit is filled and levelled up. The invention further discloses a growth method of the light emitting diode epitaxial structure. The light emitting diode epitaxial structure is advantaged in that injection efficiency of an electronic and hole-direction active region can be enhanced, uniform distribution of the electronic and hole-direction active region is realized, internal quantum efficiency of the active region can be further enhanced, and light emitting efficiency is improved.

Description

A kind of epitaxial structure and its growing method of light emitting diode
Technical field
The present invention relates to LED technology field, refers in particular to epitaxial structure and its growth of a kind of light emitting diode Method.
Background technology
In prior art, the usual extension of White-light LED chip GaN base multi-layer film structure on a sapphire substrate, which lights Efficiency=carrier injection efficiency（IE）× internal quantum efficiency（IQE）× light extraction efficiency（EE）.Due to swashing that Mg in p-type GaN adulterates Active rate is low, and effective hole concentration only has 1-5E17/cm3, far below the activation efficiency and effective electron of Si doping in N-type GaN Concentration 5E18/cm3-2E19/cm3, therefore, hole injection efficiency is the bottleneck of luminous efficiency.As hole injection efficiency is than electricity Son is low, easily causes electronics leakage, generally shows as the 1-2 QW only near p-type GaN（SQW）It is main to send out Light, other QW do not light or luminous extremely weak.
As shown in figure 1, a kind of LED structure that prior art is disclosed, grows active layer 20, on active layer 20 in N-type layer 10 Growing P-type layer 30, the N-type layer 10, active layer 20 and P-type layer 30 are all planar structure, and three-decker is parallel to each other, its hole, Electronics flows and is combined as shown in Figure 1a, and * represents that electron-hole recombinations light, ↓ current/electric field direction is represented ,+represent p-type Layer ,-N-type layer is represented, as shown in Figure 1a, its luminous efficiency is relatively low.
In order to increase the injection in hole, the luminous efficiency of light emitting diode is improved, prior art improves a kind of LED junction Structure, 10 planar growth active layer 20 of N-type layer form V-type defect hole 201 on active layer 20, form the active of V-type defect hole 201 Growing P-type layer 30 on 20 concave face of layer, as shown in Figure 2.Its hole, electronics are flowed and are combined as shown in Figure 2 a, and * represents electronics Hole-recombination lights, ↓ current/electric field direction is represented ,+P-type layer is represented ,-represent N-type layer.Have a disadvantage in that：V-type defect is cheated Distance from bottom N-type layer it is nearer, easily form electric leakage and electronics revealed, so as to affect photoelectric properties.
The content of the invention
It is an object of the invention to provide the epitaxial structure and its growing method of a kind of light emitting diode, with increase electronics and Injection efficiency of the hole to active area, makes electronics and hole obtain uniform distribution in active area, and then increases amount in active area Sub- efficiency, improves luminous efficiency.
To reach above-mentioned purpose, the solution of the present invention is：
A kind of epitaxial structure of light emitting diode, grows N-type layer in substrate surface, and N-type layer surface forms V-type defect hole, in shape Active layer is grown in the N-type layer in V-type defect hole, and the open shape and opening depth in V-type defect hole are kept on active layer, On active layer growing P-type layer and by V-type defect hole fill and lead up.
Further, N-type layer is included in unintentional doping that substrate surface grows from the bottom to top successively or n-type doping AlxInyGa(1-x-y)N shell, the Al of heavy N-type dopingxInyGa(1-x-y)N shell and the Al of heavy N-type dopingxInyGa(1-x-y)N Stress Releases Layer, V-type defect hole are formed at the Al of heavy N-type dopingxInyGa(1-x-y)N Stress Release layer surfaces；Wherein, 0≤x≤1,0≤y≤ 1, n-type doping concentration is 0-1E20cm-3, heavy N-type doping content is 1E18-1E20cm-3。
Further, the Al of unintentional doping or n-type dopingxInyGa(1-x-y)N shell is single or multiple lift structure, each layer Thickness is 0-10um, and n-type doping source is Si, Hf or C element.
Further, the Al of heavy N-type dopingxInyGa(1-x-y)N shell is single or multiple lift structure, and each layer of thickness is 0- 10um, n-type doping source are Si, Hf or C element.
Further, the Al of heavy N-type dopingxInyGa(1-x-y)N stress release layers be single or multiple lift structure, each layer of thickness Spend for 0-10um, n-type doping source is Si, Hf or C element.
Further, the Al of unintentional doping or n-type dopingxInyGa(1-x-y)N shell and the Al of heavy N-type dopingxInyGa(1-x-y)N Form the break-through dislocation being connected with each other in layer respectively, V-type defect hole is formed at the top of break-through dislocation, and V-type defect hole opening is big It is little for 0-1um, depth is 0-1um.
Further, active layer is AlxInyGa(1-x-y)The monolayer of N, multilamellar, superlattices or multi-quantum pit structure, wherein 0≤ X≤1,0≤y≤1, each layer of thickness 0-1um.
Further, substrate is Al2O3, SiC, Si, GaN or AlN.
Further, P-type layer is AlxInyGa(1-x-y)The monolayer of N, multilamellar, superlattices or multi-quantum pit structure, wherein 0≤x ≤ 1,0≤y≤1, each layer of thickness is 0-1um；P-type doped source be Mg elements, doping content 1E17-1E21cm-3。
A kind of epitaxial structures growth method of light emitting diode, comprises the following steps：
One, N-type layer is grown in substrate surface, N-type layer surface forms V-type defect hole；
Two, active layer is grown in the N-type layer for forming V-type defect hole, and the open shape in V-type defect hole is kept on active layer With opening depth；
Three, on active layer growing P-type layer and by V-type defect hole fill and lead up.
Further, comprise the following steps when N-type layer is grown：Unintentional mix what substrate surface was grown from the bottom to top successively The Al of miscellaneous or n-type dopingxInyGa(1-x-y)N shell, the Al of heavy N-type dopingxInyGa(1-x-y)What N shell and heavy N-type were adulterated AlxInyGa(1-x-y)N stress release layers, V-type defect hole are formed at the Al of heavy N-type dopingxInyGa(1-x-y)N stress release layer tables Face；Wherein, 0≤x≤1,0≤y≤1, n-type doping concentration are 0-1E20cm-3, heavy N-type doping content is 1E18-1E20cm-3。
Further, the Al of unintentional doping or n-type dopingxInyGa(1-x-y)N shell is single or multiple lift structure, each layer Thickness is 0-10um, and n-type doping source is Si, Hf or C element.
Further, the Al of heavy N-type dopingxInyGa(1-x-y)N shell is single or multiple lift structure, and each layer of thickness is 0- 10um, n-type doping source are Si, Hf or C element.
Further, the Al of heavy N-type dopingxInyGa(1-x-y)N stress release layers be single or multiple lift structure, each layer of thickness Spend for 0-10um, n-type doping source is Si, Hf or C element.
Further, the Al of unintentional doping or n-type dopingxInyGa(1-x-y)N shell and the Al of heavy N-type dopingxInyGa(1-x-y)N Form the break-through dislocation being connected with each other in layer respectively, V-type defect hole is formed at the top of break-through dislocation, and V-type defect hole opening is big It is little for 0-1um, depth is 0-1um.
Further, active layer is AlxInyGa(1-x-y)The monolayer of N, multilamellar, superlattices or multi-quantum pit structure, wherein 0≤ X≤1,0≤y≤1, each layer of thickness 0-1um.
Further, substrate is Al2O3, SiC, Si, GaN or AlN.
Further, P-type layer is AlxInyGa(1-x-y)The monolayer of N, multilamellar, superlattices or multi-quantum pit structure, wherein 0≤x ≤ 1,0≤y≤1, each layer of thickness is 0-1um；P-type doped source be Mg elements, doping content 1E17-1E21cm-3。
After using such scheme, N-type layer surface of the present invention forms V-type defect hole, grows active layer in N-type layer, and The open shape and opening depth in V-type defect hole are kept on active layer, growing P-type layer V-type defect hole is filled out on active layer It is flat, so as to obtain space folding and parallel P-N junction, increase electronics and hole to the injection efficiency of active area, make electronics and sky Cave obtains more uniform distribution in active area, and then increases active area internal quantum efficiency, improves luminous efficiency.
Description of the drawings
Fig. 1 is prior art light emitting diode epitaxial structure schematic diagram；
Fig. 1 a are prior art light emitting diode epitaxial structure hole, electronics flowing and are combined schematic diagram；
Fig. 2 is another light emitting diode epitaxial structure schematic diagram of prior art；
Fig. 2 a are another light emitting diode epitaxial structure hole of prior art, electronics flowing and are combined schematic diagram；
Fig. 3 is light emitting diode epitaxial structure schematic diagram of the present invention；
Fig. 3 a are light emitting diode epitaxial structure hole of the present invention, electronics flowing and are combined schematic diagram；
Fig. 4 to Fig. 8 is the growth flow chart of the present invention.
Label declaration
10 active layer 20 of N-type layer
V-type defect cheats 201 P-type layers 30
Substrate 1
Unintentional doping or the Al of n-type dopingxInyGa(1-x-y)N shell 2
Break-through dislocation 21
The Al of heavy N-type dopingxInyGa(1-x-y)N shell 3
31 Al of break-through dislocationxInyGa(1-x-y)N stress release layers 4
V-type defect cheats 5 active layers 6
7 N-type layer 8 of P-type layer.
Specific embodiment
The present invention is described in detail below in conjunction with drawings and the specific embodiments.
Refering to shown in Fig. 4 to Fig. 8, a kind of epitaxial structures growth method of light emitting diode that the present invention is disclosed, including with Lower step：
One, as shown in figure 4, in the unintentional doping of 1 superficial growth of substrate or the Al of n-type dopingxInyGa(1-x-y)N shell 2, wherein, 0 ≤ x≤1,0≤y≤1, n-type doping concentration are 0-1E20cm-3.Unintentional doping or the Al of n-type dopingxInyGa(1-x-y)In N shell 2 As stress forms break-through dislocation 21.Unintentional doping or the Al of n-type dopingxInyGa(1-x-y)N shell 2 is single or multiple lift Structure, each layer of thickness is 0-10um, and n-type doping source is Si, Hf or C element.Substrate 1 is Al2O3, SiC, Si, GaN or AlN。
Two, as shown in figure 5, in unintentional doping or the Al of n-type dopingxInyGa(1-x-y)Heavy N-type doping is grown on N shell 2 AlxInyGa(1-x-y)N shell 3, wherein, 0≤x≤1,0≤y≤1, heavy N-type doping content are 1E18-1E20cm-3.Due to answering masterpiece With the Al of n-type dopingxInyGa(1-x-y)Break-through dislocation 31 is correspondingly formed in N shell 3.The Al of heavy N-type dopingxInyGa(1-x-y)N shell 3 For single or multiple lift structure, each layer of thickness is 0-10um, and n-type doping source is Si, Hf or C element.
Three, as shown in fig. 6, in the Al of heavy N-type dopingxInyGa(1-x-y)Heavy N-type doping is grown on N shell 3 AlxInyGa(1-x-y)N stress release layers 4, wherein, 0≤x≤1,0≤y≤1, heavy N-type doping content are 1E18-1E20cm-3.Weight The Al of n-type dopingxInyGa(1-x-y)N stress release layers 4 are single or multiple lift structure, and each layer of thickness is 0-10um, and N-type is mixed Miscellaneous source is Si, Hf or C element.The Al of heavy N-type dopingxInyGa(1-x-y)4 surface of N stress release layers forms V-type defect hole 5, V-type Defect hole 5 is formed at the top of break-through dislocation 31, and it is 0-1um that V-type defect cheats 5 openings of sizes, and depth is 0-1um.
Four, as shown in fig. 7, in the Al of heavy N-type dopingxInyGa(1-x-y)Growth active layer 6 on N stress release layers 4, and The open shape and opening depth in V-type defect hole 5 are kept on active layer 6.Active layer 6 is AlxInyGa(1-x-y)It is the monolayer of N, many Layer, superlattices or multi-quantum pit structure, wherein 0≤x≤1,0≤y≤1, each layer of thickness 0-1um.
Five, as shown in figure 8, growing P-type layer 7 V-type defect hole 5 is filled and led up on active layer 6.P-type layer 7 is AlxInyGa(1-x-y)The monolayer of N, multilamellar, superlattices or multi-quantum pit structure, wherein 0≤x≤1,0≤y≤1, each layer of thickness Spend for 0-1um；P-type doped source be Mg elements, doping content 1E17-1E21cm-3。
As shown in Fig. 3 and Fig. 3 a, the epitaxial structure of the light emitting diode of said method growth, in 1 superficial growth N-type of substrate Layer 8,8 surface of N-type layer form V-type defect hole 5, in the N-type layer 8 for forming V-type defect hole 5 grow active layer 6, and in active layer The open shape and opening depth in V-type defect hole 5 are kept on 6, growing P-type layer 7 V-type defect hole 5 is filled out on active layer 6 It is flat.
The N-type layer 8 is included in the unintentional doping that 1 surface of substrate grows from the bottom to top successively or n-type doping AlxInyGa(1-x-y)The Al of N shell 2, heavy N-type dopingxInyGa(1-x-y)N shell 3 and the Al of heavy N-type dopingxInyGa(1-x-y)N stress is released Layer 4 is put, V-type defect hole 5 is formed at the Al of heavy N-type dopingxInyGa(1-x-y)4 surface of N stress release layers；Wherein, 0≤x≤1,0 ≤ y≤1, n-type doping concentration are 0-1E20cm-3, heavy N-type doping content is 1E18-1E20cm-3。
As shown in Figure 3 a, hole, electronics flowing and it is combined schematic diagram, * represents that electron-hole recombinations light, ↓ represent electricity Stream/direction of an electric field ,+P-type layer is represented ,-N-type layer is represented, knowable to Fig. 3 a, the present invention obtains space folding and parallel P-N Knot, increases the injection efficiency of electronics and hole to active area, makes electronics and hole obtain more uniform distribution in active area, enters And increase active area internal quantum efficiency, improve luminous efficiency.
The result for being formed as break-through dislocation release stress in V-type defect hole, such as GaN superficial growths InGaN/GaN Multiple-quantums Trap or superlattice structure, as differences between lattice constant causes stress accumulation discharge stress at break-through dislocation to a certain extent Form V-type defect hole.
The preferred embodiments of the present invention are the foregoing is only, not the restriction to this case design, all designs according to this case are closed The equivalent variations done by key, each fall within the protection domain of this case.

Claims (10)

1. a kind of epitaxial structure of light emitting diode, it is characterised in that：N-type layer is grown in substrate surface, N-type layer surface forms V Type defect is cheated, and active layer is grown in the N-type layer for forming V-type defect hole, and the opening shape in V-type defect hole is kept on active layer State and opening depth, on active layer growing P-type layer and by V-type defect hole fill and lead up.
2. a kind of epitaxial structure of light emitting diode as claimed in claim 1, it is characterised in that：N-type layer is included in substrate table Unintentional doping or the Al of n-type doping that face is grown from the bottom to top successivelyxInyGa(1-x-y)What N shell, heavy N-type were adulterated AlxInyGa(1-x-y)N shell and the Al of heavy N-type dopingxInyGa(1-x-y)N stress release layers, V-type defect hole are formed at heavy N-type doping AlxInyGa(1-x-y)N Stress Release layer surfaces；Wherein, 0≤x≤1,0≤y≤1, n-type doping concentration are 0-1E20cm-3, weight N-type doping concentration is 1E18-1E20cm-3。
3. a kind of epitaxial structure of light emitting diode as claimed in claim 2, it is characterised in that：Unintentional doping or N-type are mixed Miscellaneous AlxInyGa(1-x-y)N shell is single or multiple lift structure, and each layer of thickness is 0-10um, and n-type doping source is Si, Hf or C Element.
4. a kind of epitaxial structure of light emitting diode as claimed in claim 2, it is characterised in that：Heavy N-type doping AlxInyGa(1-x-y)N shell is single or multiple lift structure, and each layer of thickness is 0-10um, and n-type doping source is Si, Hf or C element.
5. a kind of epitaxial structure of light emitting diode as claimed in claim 2, it is characterised in that：Heavy N-type doping AlxInyGa(1-x-y)N stress release layers are single or multiple lift structure, and each layer of thickness is 0-10um, and n-type doping source is Si, Hf Or C element；Unintentional doping or the Al of n-type dopingxInyGa(1-x-y)N shell and the Al of heavy N-type dopingxInyGa(1-x-y)Divide in N shell The break-through dislocation being connected with each other is not formed, V-type defect hole is formed at the top of break-through dislocation, and V-type defect hole openings of sizes is 0- 1um, depth are 0-1um.
6. a kind of epitaxial structure of light emitting diode as claimed in claim 1, it is characterised in that：Active layer is AlxInyGa(1-x-y)The monolayer of N, multilamellar, superlattices or multi-quantum pit structure, wherein 0≤x≤1,0≤y≤1, each layer of thickness Degree 0-1um；P-type layer is AlxInyGa(1-x-y)The monolayer of N, multilamellar, superlattices or multi-quantum pit structure, wherein 0≤x≤1,0≤ Y≤1, each layer of thickness is 0-1um；P-type doped source be Mg elements, doping content 1E17-1E21cm-3；Substrate is Al2O3、 SiC, Si, GaN or AlN.
7. a kind of epitaxial structures growth method of light emitting diode, it is characterised in that：Comprise the following steps：
One, N-type layer is grown in substrate surface, N-type layer surface forms V-type defect hole；
Two, active layer is grown in the N-type layer for forming V-type defect hole, and the open shape in V-type defect hole is kept on active layer With opening depth；
Three, on active layer growing P-type layer and by V-type defect hole fill and lead up.
8. the epitaxial structures growth method of a kind of light emitting diode as claimed in claim 7, it is characterised in that：In growth N-type Comprise the following steps during layer：The unintentional doping that grown successively in substrate surface from the bottom to top or n-type doping AlxInyGa(1-x-y)N shell, the Al of heavy N-type dopingxInyGa(1-x-y)N shell and the Al of heavy N-type dopingxInyGa(1-x-y)N Stress Releases Layer, V-type defect hole are formed at the Al of heavy N-type dopingxInyGa(1-x-y)N Stress Release layer surfaces；Wherein, 0≤x≤1,0≤y≤ 1, n-type doping concentration is 0-1E20cm-3, heavy N-type doping content is 1E18-1E20cm-3。
9. the epitaxial structures growth method of a kind of light emitting diode as claimed in claim 8, it is characterised in that：It is unintentional to mix The Al of miscellaneous or n-type dopingxInyGa(1-x-y)N shell is single or multiple lift structure, and each layer of thickness is 0-10um；Heavy N-type doping AlxInyGa(1-x-y)N shell is single or multiple lift structure, and each layer of thickness is 0-10um；The Al of heavy N-type dopingxInyGa(1-x-y)N Stress release layer is single or multiple lift structure, and each layer of thickness is 0-10um；Unintentional doping or n-type doping AlxInyGa(1-x-y)N shell and the Al of heavy N-type dopingxInyGa(1-x-y)Form the break-through dislocation being connected with each other in N shell respectively, V-type lacks Pitfall is formed at the top of break-through dislocation, and V-type defect hole openings of sizes is 0-1um, and depth is 0-1um；N-type doping source be Si, Hf or C element.
10. the epitaxial structures growth method of a kind of light emitting diode as claimed in claim 8, it is characterised in that：Active layer is AlxInyGa(1-x-y)The monolayer of N, multilamellar, superlattices or multi-quantum pit structure, wherein 0≤x≤1,0≤y≤1, each layer of thickness Degree 0-1um；Substrate is Al2O3, SiC, Si, GaN or AlN；P-type layer is AlxInyGa(1-x-y)The monolayer of N, multilamellar, superlattices or many Quantum well structure, wherein 0≤x≤1,0≤y≤1, each layer of thickness is 0-1um；P-type doped source is Mg elements, is adulterated dense Degree 1E17-1E21cm-3。
CN201611167259.0A 2016-12-16 2016-12-16 Light emitting diode epitaxial structure and growth method thereof Pending CN106601885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201611167259.0A CN106601885A (en) 2016-12-16 2016-12-16 Light emitting diode epitaxial structure and growth method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201611167259.0A CN106601885A (en) 2016-12-16 2016-12-16 Light emitting diode epitaxial structure and growth method thereof

Publications (1)

Publication Number Publication Date
CN106601885A true CN106601885A (en) 2017-04-26

Family

ID=58599521

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201611167259.0A Pending CN106601885A (en) 2016-12-16 2016-12-16 Light emitting diode epitaxial structure and growth method thereof

Country Status (1)

Country Link
CN (1) CN106601885A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107768493A (en) * 2017-10-24 2018-03-06 江门市奥伦德光电有限公司 A kind of preparation method of the high LED epitaxial structure of luminous efficiency
CN108039397A (en) * 2017-11-27 2018-05-15 厦门市三安光电科技有限公司 A kind of nitride semiconductor LED
CN108447956A (en) * 2018-03-30 2018-08-24 华灿光电（浙江）有限公司 A kind of epitaxial wafer of light emitting diode and preparation method thereof
CN110197861A (en) * 2019-06-17 2019-09-03 南昌大学 A kind of AlInGaN based light-emitting diode
CN111697112A (en) * 2020-06-12 2020-09-22 东莞理工学院 Deep ultraviolet light-emitting diode based on AIN/PSS composite substrate and preparation method thereof
CN111933761A (en) * 2020-07-23 2020-11-13 厦门士兰明镓化合物半导体有限公司 Epitaxial structure and manufacturing method thereof
CN111933762A (en) * 2020-07-23 2020-11-13 厦门士兰明镓化合物半导体有限公司 Epitaxial structure and manufacturing method thereof
CN112736174A (en) * 2021-01-04 2021-04-30 宁波安芯美半导体有限公司 Deep ultraviolet LED epitaxial structure and preparation method thereof
CN113675307A (en) * 2021-08-20 2021-11-19 广东省科学院半导体研究所 Light emitting diode structure and preparation method thereof
WO2022052097A1 (en) * 2020-09-14 2022-03-17 安徽三安光电有限公司 Light-emitting diode and preparation method therefor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102983243A (en) * 2011-09-05 2013-03-20 Lg伊诺特有限公司 Light emitting device and the packaging including a light emitting structure
CN103460409A (en) * 2011-09-29 2013-12-18 东芝技术中心有限公司 P-type doping layers for use with light emitting devices
US20150221826A1 (en) * 2014-02-04 2015-08-06 Jung Seung YANG Nitride semiconductor light emitting device
CN105609606A (en) * 2014-11-14 2016-05-25 三星电子株式会社 Light emitting device and method of manufacturing the same
KR20160072914A (en) * 2014-12-15 2016-06-24 일진엘이디(주) Nitride semiconductor light emitting device
CN105762241A (en) * 2016-04-28 2016-07-13 厦门乾照光电股份有限公司 Manufacturing method for epitaxial structure of enhanced injection type light-emitting diode

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102983243A (en) * 2011-09-05 2013-03-20 Lg伊诺特有限公司 Light emitting device and the packaging including a light emitting structure
CN103460409A (en) * 2011-09-29 2013-12-18 东芝技术中心有限公司 P-type doping layers for use with light emitting devices
US20150221826A1 (en) * 2014-02-04 2015-08-06 Jung Seung YANG Nitride semiconductor light emitting device
CN105609606A (en) * 2014-11-14 2016-05-25 三星电子株式会社 Light emitting device and method of manufacturing the same
KR20160072914A (en) * 2014-12-15 2016-06-24 일진엘이디(주) Nitride semiconductor light emitting device
CN105762241A (en) * 2016-04-28 2016-07-13 厦门乾照光电股份有限公司 Manufacturing method for epitaxial structure of enhanced injection type light-emitting diode

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107768493A (en) * 2017-10-24 2018-03-06 江门市奥伦德光电有限公司 A kind of preparation method of the high LED epitaxial structure of luminous efficiency
CN108039397A (en) * 2017-11-27 2018-05-15 厦门市三安光电科技有限公司 A kind of nitride semiconductor LED
CN108447956A (en) * 2018-03-30 2018-08-24 华灿光电（浙江）有限公司 A kind of epitaxial wafer of light emitting diode and preparation method thereof
CN108447956B (en) * 2018-03-30 2020-09-29 华灿光电（浙江）有限公司 Epitaxial wafer of light emitting diode and preparation method thereof
CN110197861A (en) * 2019-06-17 2019-09-03 南昌大学 A kind of AlInGaN based light-emitting diode
CN110197861B (en) * 2019-06-17 2024-04-02 南昌大学 AlInGaN-based light-emitting diode
CN111697112B (en) * 2020-06-12 2021-10-01 东莞理工学院 Deep ultraviolet light-emitting diode based on AlN/PSS composite substrate and preparation method thereof
CN111697112A (en) * 2020-06-12 2020-09-22 东莞理工学院 Deep ultraviolet light-emitting diode based on AIN/PSS composite substrate and preparation method thereof
CN111933762A (en) * 2020-07-23 2020-11-13 厦门士兰明镓化合物半导体有限公司 Epitaxial structure and manufacturing method thereof
CN111933761A (en) * 2020-07-23 2020-11-13 厦门士兰明镓化合物半导体有限公司 Epitaxial structure and manufacturing method thereof
CN111933761B (en) * 2020-07-23 2022-04-26 厦门士兰明镓化合物半导体有限公司 Epitaxial structure and manufacturing method thereof
WO2022052097A1 (en) * 2020-09-14 2022-03-17 安徽三安光电有限公司 Light-emitting diode and preparation method therefor
CN112736174A (en) * 2021-01-04 2021-04-30 宁波安芯美半导体有限公司 Deep ultraviolet LED epitaxial structure and preparation method thereof
CN113675307A (en) * 2021-08-20 2021-11-19 广东省科学院半导体研究所 Light emitting diode structure and preparation method thereof

Similar Documents

Publication Publication Date Title
CN106601885A (en) Light emitting diode epitaxial structure and growth method thereof
CN104393124B (en) A kind of preparation method of LED epitaxial slice structure
US10665748B2 (en) Light emitting diode and fabrication method therof
CN102185056B (en) Gallium-nitride-based light emitting diode capable of improving electron injection efficiency
CN103681985B (en) Epitaxial wafer of a kind of light emitting diode and preparation method thereof
CN105449051B (en) One kind is using MOCVD technologies in GaN substrate or GaN/Al2O3The method that high brightness homogeneity LED is prepared in compound substrate
US10128410B2 (en) Multi-color light emitting devices with compositionally graded cladding group III-nitride layers grown on substrates
JP2008544567A (en) Light emitting diode with nanorod array structure having nitride multiple quantum well, method for manufacturing the same, and nanorod
CN105789394A (en) GaN-based LED epitaxial structure and manufacture method thereof
CN102754184A (en) Semiconductor Device Structures With Modulated Doping And Related Methods
CN103824917B (en) LED manufacturing method, LED and chip
CN105762241A (en) Manufacturing method for epitaxial structure of enhanced injection type light-emitting diode
JP6227134B2 (en) Nitride semiconductor light emitting device
CN104638074B (en) High brightness GaN base LED epitaxial structures and preparation method thereof
CN104993028B (en) A kind of LED epitaxial slice
WO2017076116A1 (en) Led epitaxial structure and manufacturing method
CN110828623B (en) Light-emitting diode preparation method and light-emitting diode
CN106299052A (en) A kind of GaN epitaxial structure for LED and preparation method
CN103594579B (en) A kind of epitaxial structure of iii-nitride light emitting devices
CN103456852B (en) A kind of LED and preparation method
CN206059420U (en) A kind of light emitting diode with double hole accumulation layers
CN203850331U (en) Gallium nitride-based light-emitting diode epitaxial wafer
CN104218125B (en) A kind of growing method of white light LEDs and the white light LEDs prepared using the growing method
CN103985799B (en) Light-emitting diode and manufacturing method thereof
CN111276583A (en) GaN-based LED epitaxial structure, preparation method thereof and light emitting diode

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20170426

RJ01 Rejection of invention patent application after publication