CN107452843B - Light emitting diode epitaxial wafer and preparation method thereof - Google Patents
Light emitting diode epitaxial wafer and preparation method thereof Download PDFInfo
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- CN107452843B CN107452843B CN201710520205.6A CN201710520205A CN107452843B CN 107452843 B CN107452843 B CN 107452843B CN 201710520205 A CN201710520205 A CN 201710520205A CN 107452843 B CN107452843 B CN 107452843B
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 19
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- 239000013078 crystal Substances 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
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- 229910052738 indium Inorganic materials 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of semiconductors. The epitaxial wafer comprises a substrate, a buffer layer, a non-doped gallium nitride layer, an N-type gallium nitride layer, a light emitting layer and a P-type gallium nitride layer, wherein the light emitting layer comprises M first sublayers and N second sublayers, the first sublayers comprise a first quantum well layer and a first quantum barrier layer, and the second sublayers comprise a second quantum well layer and a second quantum barrier layer; the first quantum well layer is an InGaN layer, and the thicknesses of the second quantum barrier layers are the same; the content of the In component In the M first quantum well layers is reduced layer by layer, and the thicknesses of the M first quantum well layers are the same or are gradually reduced; the first quantum barrier layer comprises a GaN layer, an AlGaN layer and a GaN layer which are sequentially stacked, the content of Al components in the M AlGaN layers is reduced along the layers one by one, and the thickness of the M AlGaN layers is reduced one by one. The invention can effectively reduce the migration speed of electrons and improve the luminous efficiency of the LED.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of LED epitaxial slice and preparation method thereof.
Background technique
Light emitting diode (English: Light Emitting Diode, abbreviation: LED) chip is that one kind can be directly electricity
It is converted into the solid-state semiconductor device of light comprising epitaxial wafer and the electrode in the production of extension on piece.
Existing epitaxial wafer includes Sapphire Substrate and stacks gradually buffer layer, undoped nitrogen on a sapphire substrate
Change gallium layer, n type gallium nitride layer, luminescent layer and p-type gallium nitride layer.Wherein, luminescent layer includes multiple quantum well layers and multiple quantum
Barrier layer, multiple quantum well layers and multiple quantum barrier layers are alternately laminated, and quantum well layer is indium gallium nitrogen layer, and quantum barrier layer is gallium nitride
Layer.When the Injection Current into epitaxial wafer, luminescent layer is injected in the hole in the electronics and p-type gallium nitride layer in n type gallium nitride layer
Radiation recombination occurs and shines.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
The quantity and speed of electron injection luminescent layer are much larger than hole, and electronics, which is easy to cross luminescent layer, under high current arrives
Non-radiative recombination occurs up to p-type gallium nitride layer and hole, causes the incidence of radiation recombination to decline, reduces the luminous effect of LED
Rate.
Summary of the invention
In order to solve problems in the prior art, the embodiment of the invention provides a kind of LED epitaxial slice and its preparations
Method.The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of LED epitaxial slice, the LED epitaxial slice packets
It includes substrate and stacks gradually buffer layer, undoped gallium nitride layer, n type gallium nitride layer, luminescent layer and p-type over the substrate
Gallium nitride layer, the luminescent layer include M the first sublayers and N number of second sublayer for being layered in the M the first sublayers, M >=2
And M is integer, N is positive integer, and first sublayer includes the first quantum well layer and is layered on first quantum well layer
First quantum barrier layer, second sublayer include the second quantum well layer and the second quantum for being layered on second quantum well layer
Barrier layer；First quantum well layer and second quantum well layer are InGaN layer, In group in each second quantum well layer
The content divided is identical, and the thickness of each second quantum well layer is identical；Second quantum barrier layer is GaN layer, each described
The thickness of second quantum barrier layer is identical；The content of In component is along the LED epitaxial in M first quantum well layers
The stacking direction of piece is successively reduced, and the thickness of M first quantum well layers is identical or along the LED epitaxial slice
Stacking direction be gradually reduced；First quantum barrier layer includes the GaN layer, AlGaN layer and GaN layer stacked gradually, and M described
The content of Al component is successively reduced along the stacking direction of the LED epitaxial slice in AlGaN layer, the M AlGaN layers
Thickness successively reduce along the stacking direction of the LED epitaxial slice.
Optionally, each first quantum well layer with a thickness of 2nm~6nm.
Optionally, each first quantum barrier layer with a thickness of 15nm~30nm.
Optionally, M≤8.
Optionally, the content of Al component is 10%~30% in each AlGaN layer.
Optionally, the content of In component is 8%~40% in each first quantum well layer.
On the other hand, the embodiment of the invention provides a kind of preparation method of LED epitaxial slice, the preparation sides
Method includes:
One substrate is provided；
Buffer layer, undoped gallium nitride layer, n type gallium nitride layer, luminescent layer and p-type nitridation are sequentially formed over the substrate
Gallium layer；
Wherein, the luminescent layer includes M the first sublayers and N number of second sublayer for being layered in the M the first sublayers,
M >=2 and M are integer, and N is positive integer, and first sublayer includes the first quantum well layer and is layered in first quantum well layer
On the first quantum barrier layer, second sublayer include the second quantum well layer and be layered on second quantum well layer second
Quantum barrier layer；First quantum well layer and second quantum well layer are InGaN layer, in M first quantum well layers
The content of In component is successively reduced along the stacking direction of the LED epitaxial slice, the thickness of M first quantum well layers
It spends identical or is gradually reduced along the stacking direction of the LED epitaxial slice；In group in each second quantum well layer
The content divided is identical, and the thickness of each second quantum well layer is identical；First quantum barrier layer includes the GaN stacked gradually
Layer, AlGaN layer and GaN layer, the content of Al component is along the stacking side of the LED epitaxial slice in the M AlGaN layers
It is reduced to layer-by-layer, the thickness of the M AlGaN layers successively reduces along the stacking direction of the LED epitaxial slice；It is described
Second quantum barrier layer is GaN layer, and the thickness of each second quantum barrier layer is identical.
Optionally, the growth temperature of each first quantum well layer is less than or equal to each first quantum barrier layer
Growth temperature.
Optionally, the growth temperature of each first quantum well layer is 920 DEG C~980 DEG C.
Optionally, the growth temperature of each first quantum barrier layer is 920 DEG C~980 DEG C.
Technical solution provided in an embodiment of the present invention has the benefit that
By the way that by luminescent layer, the content of In component is adjusted to along stacking side in several quantum well layers of n type gallium nitride layer
It is reduced to layer-by-layer, and the thickness of several quantum well layers remains unchanged or successively reduces in the stacking direction, by luminescent layer close to N-type nitrogen
The several quantum barrier layers for changing gallium layer are designed as being stacked gradually by GaN layer, AlGaN layer and GaN layer, Al in several AlGaN layers
The content of component is successively reduced in the stacking direction, and the thickness of several AlGaN layers successively reduces in the stacking direction, so that close to N
It is thicker that potential barrier between the quantum well layer and quantum barrier layer of type gallium nitride layer differs AlGaN larger and that potential barrier is high, can be effective
Ground reduces the migration velocity of electronics, and avoiding electronics from crossing, luminescent layer reaches p-type gallium nitride layer and non-radiative recombination, electricity occur for hole
Son can be evenly distributed in luminescent layer as far as possible, increase the incidence of radiation recombination, improve the luminous efficiency of LED.It leans on simultaneously
Several quantum well layers of nearly p-type gallium nitride layer are main luminous traps, and the content of In component is identical in these quantum well layers, can
To avoid the content due to In component is different and causes the optical band issued different, photochromic dispersion.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram for LED epitaxial slice that the embodiment of the present invention one provides；
Fig. 2 a is the structural schematic diagram for the luminescent layer that the embodiment of the present invention one provides；
Fig. 2 b is the structural schematic diagram for the first sublayer that the embodiment of the present invention one provides；
Fig. 2 c is the structural schematic diagram for the second sublayer that the embodiment of the present invention one provides；
Fig. 3 is the potential barrier schematic diagram for multiple first sublayers that the embodiment of the present invention one provides；
Fig. 4 is a kind of flow chart of the preparation method of LED epitaxial slice provided by Embodiment 2 of the present invention；
Fig. 5 is a kind of flow chart of the preparation method for LED epitaxial slice that the embodiment of the present invention three provides.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
The embodiment of the invention provides a kind of LED epitaxial slices, referring to Fig. 1, the epitaxial wafer include substrate 1 and
Buffer layer 2, undoped gallium nitride layer 3, n type gallium nitride layer 4, luminescent layer 5 and the p-type gallium nitride layer being sequentially laminated on substrate 1
6。
In the present embodiment, a, luminescent layer 5 include M the first sublayer 51 and are layered in M the first sublayers 51 referring to fig. 2
N number of second sublayer 52, M >=2 and M are integer, and N is positive integer.B referring to fig. 2, the first sublayer 51 include the first quantum well layer
51a and the first quantum barrier layer 51b being layered on the first quantum well layer 51a, c, the second sublayer 52 include the second quantum referring to fig. 2
Well layer 52a and the second quantum barrier layer 52b being layered on the second quantum well layer 52a.
First quantum well layer 51a and the second quantum well layer 52a is InGaN layer, In group in M the first quantum well layer 51a
Point content successively reduced along the stacking direction of LED epitaxial slice, the thickness of M the first quantum well layer 51a it is identical or
Stacking direction along LED epitaxial slice is gradually reduced.The content of In component is identical in each second quantum well layer 52a, respectively
The thickness of a second quantum well layer 52a is identical.
First quantum barrier layer 51b includes the GaN layer 51c stacked gradually, AlGaN layer 51d and GaN layer 51e, M AlGaN layer
The content of Al component is successively reduced along the stacking direction of LED epitaxial slice in 51d, and the thickness of M AlGaN layer 51d is along hair
The stacking direction of optical diode epitaxial wafer successively reduces.Second quantum barrier layer 52b is GaN layer, each second quantum barrier layer 52b's
Thickness is identical.
Fig. 3 is the potential barrier schematic diagram of multiple first sublayers, from figure 3, it can be seen that the thickness of each first quantum well layer 51a
Identical and potential barrier successively increases, and the thickness of AlGaN layer 51d successively reduces in each first quantum barrier layer and potential barrier successively reduces,
Barrier potential difference between such first quantum well layer and the first quantum barrier layer is smaller and smaller, reaches in the position close to n type gallium nitride layer
It is most strong to the barrier effect of electronics to maximum.
The embodiment of the present invention is by by the content tune of luminescent layer In component in several quantum well layers of n type gallium nitride layer
It is whole to be reduced to be layer-by-layer in the stacking direction, and the thickness of several quantum well layers remains unchanged or successively reduces in the stacking direction, will send out
Photosphere is designed as being stacked gradually by GaN layer, AlGaN layer and GaN layer close to several quantum barrier layers of n type gallium nitride layer, several
The content of Al component is successively reduced in the stacking direction in a AlGaN layer, and the thickness of several AlGaN layers successively subtracts in the stacking direction
It is small so that close to n type gallium nitride layer quantum well layer and quantum barrier layer between potential barrier differ AlGaN larger and that potential barrier is high compared with
Thickness can be effectively reduced the migration velocity of electronics, and avoiding electronics from crossing, luminescent layer reaches p-type gallium nitride layer and hole generation is non-
Radiation recombination, electronics can be evenly distributed in luminescent layer as far as possible, increase the incidence of radiation recombination, improve shining for LED
Efficiency.It is simultaneously main luminous trap close to several quantum well layers of p-type gallium nitride layer, In component in these quantum well layers
Content is identical, can be to avoid the content due to In component is different and causes the optical band issued different, photochromic dispersion.
Optionally, the thickness of each first quantum well layer 51a can be 2nm~6nm.If the thickness of the first quantum well layer 51a
Degree is less than 2nm, then inadequate to the restriction effect of electronics, cannot achieve being uniformly distributed for carrier；If the first quantum well layer 51a's
Thickness is greater than 6nm, then will lead to that polarity effect is larger, and the crystal quality for the trap that influences to shine reduces luminous efficiency.
Optionally, the thickness of each first quantum barrier layer 51b can be 15nm~30nm.If the first quantum barrier layer 51b's
Thickness is less than 15nm, then inadequate to the restriction effect of electronics, cannot achieve being uniformly distributed for carrier；If the first quantum barrier layer
The thickness of 51b is greater than 30nm, then will lead to that polarity effect is larger, and the crystal quality for the trap that influences to shine reduces luminous efficiency.
Optionally, M≤8.If M > 8, it will lead to that polarity effect is larger, the crystal quality for the trap that influences to shine is reduced and shone
Efficiency.
Optionally, the content of Al component can be 10%~30% in each AlGaN layer 51d.If Al in AlGaN layer 51d
The content of component is less than 10%, then inadequate to the restriction effect of electronics, cannot achieve being uniformly distributed for carrier；If AlGaN layer
The content of Al component is greater than 30% in 51d, then will lead to that polarity effect is larger, and the crystal quality for the trap that influences to shine is reduced and shone
Efficiency.
Optionally, the content of In component is 8%~40% in each first quantum well layer 51a.If the first quantum well layer 51a
The content of middle In component is less than 8%, then inadequate to the restriction effect of electronics, cannot achieve being uniformly distributed for carrier；If first
The content of In component is greater than 40% in quantum well layer 51a, then will lead to that polarity effect is larger, the crystal quality for the trap that influences to shine,
Reduce luminous efficiency.
Specifically, substrate 1 can be Sapphire Substrate；Buffer layer 2 can be aln layer or gallium nitride layer.
More specifically, the thickness of buffer layer can be 15nm~30nm；The thickness of undoped gallium nitride layer can be 1.5 μm
~2.5 μm；The thickness of n type gallium nitride layer can be 0.5 μm~1.5 μm；The content of In component is 10% in second quantum well layer
~45%；The thickness of each second quantum well layer can be 2nm~5nm, and the thickness of each second quantum barrier layer can be 12nm
~20nm, 4≤N≤12；The thickness of p-type gallium nitride layer can be 1.5 μm~2.5 μm.
Embodiment two
The embodiment of the invention provides a kind of preparation methods of LED epitaxial slice, mention suitable for preparation embodiment one
The epitaxial wafer of confession.Referring to fig. 4, which includes:
Step 201: a substrate is provided.
Step 202: sequentially forming buffer layer, undoped gallium nitride layer, n type gallium nitride layer, carrier adjustment on substrate
Layer, luminescent layer and p-type gallium nitride layer.
In the present embodiment, luminescent layer includes M the first sublayers and N number of second sublayer for being layered in M the first sublayers,
M >=2 and M are integer, and N is positive integer, the first sublayer include the first quantum well layer and be layered on the first quantum well layer first
Quantum barrier layer, the second sublayer include the second quantum well layer and the second quantum barrier layer for being layered on the second quantum well layer；First amount
Sub- well layer and the second quantum well layer are InGaN layer, and the content of In component is along LED epitaxial in M the first quantum well layers
The stacking direction of piece is successively reduced, and the thickness of M the first quantum well layers is identical or stacking side along LED epitaxial slice
To being gradually reduced；The content of In component is identical in each second quantum well layer, and the thickness of each second quantum well layer is identical；First
Quantum barrier layer includes the GaN layer, AlGaN layer and GaN layer stacked gradually, and the content of Al component is along light-emitting diodes in M AlGaN layer
The stacking direction of pipe epitaxial wafer is successively reduced, and the thickness of M AlGaN layer successively subtracts along the stacking direction of LED epitaxial slice
It is small；Second quantum barrier layer is GaN layer, and the thickness of each second quantum barrier layer is identical.
The embodiment of the present invention is by by the content tune of luminescent layer In component in several quantum well layers of n type gallium nitride layer
It is whole to be reduced to be layer-by-layer in the stacking direction, and the thickness of several quantum well layers remains unchanged or successively reduces in the stacking direction, will send out
Photosphere is designed as being stacked gradually by GaN layer, AlGaN layer and GaN layer close to several quantum barrier layers of n type gallium nitride layer, several
The content of Al component is successively reduced in the stacking direction in a AlGaN layer, and the thickness of several AlGaN layers successively subtracts in the stacking direction
It is small so that close to n type gallium nitride layer quantum well layer and quantum barrier layer between potential barrier differ AlGaN larger and that potential barrier is high compared with
Thickness can be effectively reduced the migration velocity of electronics, and avoiding electronics from crossing, luminescent layer reaches p-type gallium nitride layer and hole generation is non-
Radiation recombination, electronics can be evenly distributed in luminescent layer as far as possible, increase the incidence of radiation recombination, improve shining for LED
Efficiency.It is simultaneously main luminous trap close to several quantum well layers of p-type gallium nitride layer, In component in these quantum well layers
Content is identical, can be to avoid the content due to In component is different and causes the optical band issued different, photochromic dispersion.
Optionally, the growth temperature of each first quantum well layer can be less than or equal to the growth of each first quantum barrier layer
On the one hand temperature avoids the In in the first quantum well layer from being precipitated, causes the content of In component very low；On the other hand guarantee the first amount
The growth quality of sub- barrier layer is preferable, avoids the growth quality of low temperature effect entirety.
Optionally, the growth temperature of each first quantum well layer can be 920 DEG C~980 DEG C.If the first quantum well layer
Growth temperature is lower than 920 DEG C, then will lead to In precipitation, cause the content of In component very low；If the growth temperature of the first quantum well layer
Degree is higher than 980 DEG C, then growth quality is poor.
Optionally, the growth temperature of each first quantum barrier layer can be 920 DEG C~980 DEG C.If the first quantum barrier layer
Growth temperature is lower than 920 DEG C, then will lead to In precipitation, cause the content of In component very low；If the growth temperature of the first quantum barrier layer
Degree is higher than 980 DEG C, then growth quality is poor.
Specifically, the growth temperature of buffer layer can be 600 DEG C~700 DEG C, growth pressure can for 200mbar~
300mbar.The growth temperature of undoped gallium nitride layer can be 1200 DEG C~1250 DEG C, growth pressure can for 200mbar~
500mbar.The growth temperature of n type gallium nitride layer can be 1000 DEG C~1050 DEG C, growth pressure can for 150mbar~
300mbar.The growth pressure of luminescent layer can be 200mbar~400mbar, and the growth temperature of each second quantum well layer can be with
It is 830 DEG C~880 DEG C, the growth temperature of each second quantum barrier layer can be 920 DEG C~980 DEG C.The growth of p-type gallium nitride layer
Temperature can be 1200 DEG C~1250 DEG C, and growth pressure can be 200mbar~600mbar.
Embodiment three
The embodiment of the invention provides a kind of preparation method of LED epitaxial slice, preparation side provided in this embodiment
Method is a kind of specific implementation for the preparation method that embodiment two provides.Referring to Fig. 5, which includes:
Step 301: Sapphire Substrate is carried out to heat treatment in 10 minutes under 1300 DEG C of hydrogen atmosphere, it is blue precious with cleaning
The surface at stone lining bottom.
Step 302: control growth temperature is 650 DEG C, growth pressure 250mbar, on a sapphire substrate growth thickness
For the gallium nitride layer of 30nm, buffer layer is formed.
Step 303: control growth temperature is 1230 DEG C, growth pressure 300mbar, and growth thickness is 2 μ on the buffer layer
The undoped gallium nitride layer of m.
Step 304: control growth temperature is 1025 DEG C, and growth pressure 225mbar is grown on undoped gallium nitride layer
N type gallium nitride layer.
Step 305: control growth pressure is 300mbar, grows luminescent layer on n type gallium nitride layer.
In the present embodiment, luminescent layer includes 6 the first sublayers and 8 the second sublayers being layered in 6 the first sublayers,
First sublayer includes the first quantum well layer and the first quantum barrier layer for being layered on the first quantum well layer, and the second sublayer includes second
Quantum well layer and the second quantum barrier layer being layered on the second quantum well layer.First quantum well layer and the second quantum well layer are
InGaN layer, the content of In component successively subtracts along the stacking direction of LED epitaxial slice from 30% in 6 the first quantum well layers
As little as 10%, each first quantum well layer with a thickness of 5nm, the growth temperature of each first quantum well layer is 860 DEG C.Each
The content of In component is 15% in two quantum well layers, each second quantum well layer with a thickness of 3nm, each second quantum well layer
Growth temperature is 850 DEG C.First quantum barrier layer includes the GaN layer, AlGaN layer and GaN layer stacked gradually, Al in 8 AlGaN layers
The content of component is successively reduced from 25% to the thickness edge of 15%, 8 AlGaN layer along the stacking direction of LED epitaxial slice
The stacking direction of LED epitaxial slice is successively decreased to 10nm from 25nm, and the growth temperature of each first quantum barrier layer is
970℃.Second quantum barrier layer be GaN layer, each second quantum barrier layer with a thickness of 12nm, the growth of each second quantum barrier layer
Temperature is 950 DEG C.
Step 306: control growth temperature is 1240 DEG C, growth pressure 350mbar, and growth thickness is on the light-emitting layer
The p-type gallium nitride layer of 300nm.
In the present embodiment, whole process is using metallo-organic compound chemical gaseous phase deposition (English: Meta1
Organic Chemical Vapor Deposition, referred to as: MOCVD) reaction chamber is realized, high-purity hydrogen is used when realization
(H2) or nitrogen (N2) it is used as carrier gas, using trimethyl gallium (TMGa) as gallium source, high-purity ammonia (NH3) it is used as nitrogen source, trimethyl
Indium (TMIn) is used as indium source, and trimethyl aluminium (TMAl) is used as silicon source, and N type dopant selects silane, and P-type dopant selects two cyclopentadienyls
Magnesium.
Experiment discovery, using the LED of the epitaxial wafer production of preparation method provided in this embodiment preparation, with existing preparation side
The LED of the epitaxial wafer production of (other identical in addition to the not forming carrier adjustment layer) preparation of method is compared, and luminous efficiency improves
10%.
Example IV
The embodiment of the invention provides a kind of preparation method of LED epitaxial slice, preparation side provided in this embodiment
Method is another specific implementation for the preparation method that embodiment two provides.Preparation method provided in this embodiment is mentioned with embodiment three
The preparation method of confession is essentially identical, the difference is that, luminescent layer includes 8 the first sublayers.In group in 6 the first quantum well layers
Point content successively reduced from 30% to 10% along the stacking direction of LED epitaxial slice, the thickness of each first quantum well layer
Degree is 2nm, and the growth temperature of each first quantum well layer is 860 DEG C.The content of Al component is along light-emitting diodes in 8 AlGaN layers
The stacking direction of pipe epitaxial wafer successively reduces the layer to the thickness of 8%, 8 AlGaN layer along LED epitaxial slice from 40%
Folded direction is successively decreased to 15nm from 30nm, and the growth temperature of each first quantum barrier layer is 970 DEG C.
Experiment discovery, using the LED of the epitaxial wafer production of preparation method provided in this embodiment preparation, with existing preparation side
The LED of the epitaxial wafer production of (other identical in addition to the not forming carrier adjustment layer) preparation of method is compared, and luminous efficiency improves
8%.
Embodiment five
The embodiment of the invention provides a kind of preparation method of LED epitaxial slice, preparation side provided in this embodiment
Method is another specific implementation for the preparation method that embodiment two provides.Preparation method provided in this embodiment is mentioned with embodiment three
The preparation method of confession is essentially identical, the difference is that, luminescent layer includes 2 the first sublayers.In group in 2 the first quantum well layers
Point content successively reduced from 20% to 15% along the stacking direction of LED epitaxial slice, the thickness of each first quantum well layer
Degree is 6nm, and the growth temperature of each first quantum well layer is 860 DEG C.The content of Al component is along light-emitting diodes in 2 AlGaN layers
The stacking direction of pipe epitaxial wafer successively reduces the layer to the thickness of 15%, 2 AlGaN layer along LED epitaxial slice from 25%
Folded direction is successively decreased to 20nm from 25nm, and the growth temperature of each first quantum barrier layer is 970 DEG C.
Experiment discovery, using the LED of the epitaxial wafer production of preparation method provided in this embodiment preparation, with existing preparation side
The LED of the epitaxial wafer production of (other identical in addition to the not forming carrier adjustment layer) preparation of method is compared, and luminous efficiency improves
5%.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of LED epitaxial slice, the LED epitaxial slice includes substrate and is sequentially laminated on the substrate
On buffer layer, undoped gallium nitride layer, n type gallium nitride layer, luminescent layer and p-type gallium nitride layer, the luminescent layer includes M the
One sublayer and N number of second sublayer being layered in the M the first sublayers, M >=2 and M are integer, and 4≤N≤12 and N are positive whole
Number, first sublayer includes the first quantum well layer and the first quantum barrier layer for being layered on first quantum well layer, described
Second sublayer includes the second quantum well layer and the second quantum barrier layer for being layered on second quantum well layer；First quantum
Well layer and second quantum well layer are InGaN layer, and the content of In component is identical in each second quantum well layer, each
The thickness of second quantum well layer is identical；Second quantum barrier layer is GaN layer, the thickness of each second quantum barrier layer
It is identical；It is characterized in that, in M first quantum well layers In component content along the LED epitaxial slice stacking
Direction is successively reduced, and the thickness of M first quantum well layers is identical or stacking side along the LED epitaxial slice
To being gradually reduced；First quantum barrier layer includes the GaN layer, AlGaN layer and GaN layer stacked gradually, the M AlGaN layers
The content of middle Al component is successively reduced along the stacking direction of the LED epitaxial slice, the thickness edge of the M AlGaN layers
The stacking direction of the LED epitaxial slice successively reduces.
2. LED epitaxial slice according to claim 1, which is characterized in that the thickness of each first quantum well layer
Degree is 2nm~6nm.
3. LED epitaxial slice according to claim 1 or 2, which is characterized in that each first quantum barrier layer
With a thickness of 15nm~30nm.
4. LED epitaxial slice according to claim 1 or 2, which is characterized in that M≤8.
5. LED epitaxial slice according to claim 1 or 2, which is characterized in that Al group in each AlGaN layer
The content divided is 10%~30%.
6. LED epitaxial slice according to claim 1 or 2, which is characterized in that each first quantum well layer
The content of middle In component is 8%~40%.
7. a kind of preparation method of LED epitaxial slice, which is characterized in that the preparation method includes:
One substrate is provided；
Buffer layer, undoped gallium nitride layer, n type gallium nitride layer, luminescent layer and p-type gallium nitride are sequentially formed over the substrate
Layer；
Wherein, the luminescent layer includes M the first sublayers and N number of second sublayer for being layered in the M the first sublayers, M >=2
And M is integer, 4≤N≤12 and N are positive integer, and first sublayer includes the first quantum well layer and is layered in first amount
The first quantum barrier layer in sub- well layer, second sublayer include the second quantum well layer and are layered on second quantum well layer
The second quantum barrier layer；First quantum well layer and second quantum well layer are InGaN layer, M first quantum
The content of In component is successively reduced along the stacking direction of the LED epitaxial slice in well layer, M first Quantum Well
The thickness of layer is identical or is gradually reduced along the stacking direction of the LED epitaxial slice；Each second quantum well layer
The content of middle In component is identical, and the thickness of each second quantum well layer is identical；First quantum barrier layer includes successively layer
Folded GaN layer, AlGaN layer and GaN layer, the content of Al component is along the LED epitaxial slice in M AlGaN layers
Stacking direction is successively reduced, and the thickness of the M AlGaN layers successively subtracts along the stacking direction of the LED epitaxial slice
It is small；Second quantum barrier layer is GaN layer, and the thickness of each second quantum barrier layer is identical.
8. preparation method according to claim 7, which is characterized in that the growth temperature of each first quantum well layer is small
In or equal to each first quantum barrier layer growth temperature.
9. preparation method according to claim 7 or 8, which is characterized in that the growth temperature of each first quantum well layer
Degree is 920 DEG C~980 DEG C.
10. preparation method according to claim 7 or 8, which is characterized in that the growth temperature of each first quantum barrier layer
Degree is 920 DEG C~980 DEG C.
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| CN109065678B (en) * | 2018-06-20 | 2020-04-10 | 华灿光电股份有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN109545924B (en) * | 2018-09-26 | 2020-05-19 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
| CN109671814A (en) * | 2018-11-21 | 2019-04-23 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and its manufacturing method |
| CN112366260B (en) * | 2020-09-30 | 2023-11-14 | 华灿光电（浙江）有限公司 | Light-emitting diode epitaxial wafer and manufacturing method thereof |
| CN112993099B (en) * | 2021-02-09 | 2022-06-10 | 厦门乾照光电股份有限公司 | Manufacturing method of LED chip with protective layer |
| CN116191203B (en) * | 2023-04-21 | 2023-07-14 | 深圳市星汉激光科技股份有限公司 | High-efficiency blue light semiconductor laser chip |
| CN116666512A (en) * | 2023-08-02 | 2023-08-29 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
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