CN106653970B - Epitaxial wafer of light emitting diode and growth method thereof - Google Patents
Epitaxial wafer of light emitting diode and growth method thereof Download PDFInfo
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- CN106653970B CN106653970B CN201611033249.8A CN201611033249A CN106653970B CN 106653970 B CN106653970 B CN 106653970B CN 201611033249 A CN201611033249 A CN 201611033249A CN 106653970 B CN106653970 B CN 106653970B
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- 230000012010 growth Effects 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 8
- 239000002019 doping agent Substances 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 abstract description 10
- 238000002347 injection Methods 0.000 abstract description 6
- 239000007924 injection Substances 0.000 abstract description 6
- 238000005192 partition Methods 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000004020 luminiscence type Methods 0.000 abstract description 2
- 239000002131 composite material Substances 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 60
- 235000012431 wafers Nutrition 0.000 description 30
- 229910002704 AlGaN Inorganic materials 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 5
- 230000003760 hair shine Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000007773 growth pattern Effects 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses an epitaxial wafer of a light emitting diode and a growth method thereof, belonging to the technical field of semiconductors. The epitaxial wafer comprises a substrate, and a buffer layer, an undoped GaN layer, an N-type GaN layer, a light emitting layer and a P-type GaN layer which are sequentially stacked on the substrate, wherein the buffer layer is doped with Mg. According to the invention, the buffer layer is doped with Mg, which can induce the material of the buffer layer to change from two-dimensional growth to three-dimensional growth to form three-dimensional island-shaped crystal grains, and the growth temperature of the buffer layer can be increased without adopting a low-temperature low-pressure growth mode for the buffer layer, so that the generation of lattice defects such as edge dislocation, screw dislocation and the like is reduced, the crystal quality of an epitaxial wafer is improved, and the internal quantum efficiency and the antistatic capability of the LED are improved. And an undoped GaN layer is arranged between the buffer layer and the N-type GaN layer, and the undoped GaN layer can play a role of partition, so that the influence of Mg doping in the buffer layer on the electron injection luminescent layer in the N-type GaN layer on composite luminescence is avoided.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to the epitaxial wafer and its growing method of a kind of light emitting diode.
Background technique
Using gallium nitride as the semiconductor light-emitting-diode (English: Light Emitting Diode, abbreviation: LED) of representative,
The good characteristics such as big with forbidden bandwidth, high electronics saturation drift velocity, high temperature resistant, high power capacity, ternary alloy three-partalloy InGaN
Band gap from 0.7ev to 3.4ev be continuously adjusted, the whole region of emission wavelength covering visible light and ultraviolet light, in emerging light
There is vast prospect in electric industry.
GaN base LED epitaxial wafer is to carry out epitaxial growth in hetero-substrates (such as Sapphire Substrate) to form, GaN and substrate
Between lattice mismatch it is big.In order to improve the Lattice Matching between GaN and substrate, usually first in substrate using low-temp low-pressure
Mode grows the buffer layer being made of the crystal grain of three-dimensional island, then on the buffer layer grow layer of undoped gan, N-type GaN layer,
InGaN quantum well layer and GaN quantum build luminescent layer, p-type GaN layer made of alternating.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Although the buffer layer of the crystal grain composition of three-dimensional island can improve the Lattice Matching between GaN and substrate, adopt
With the mode grown buffer layer of low-temp low-pressure, the lattice defects such as edge dislocation, screw dislocation are easy to cause, dislocation is difficult to eliminate, and
And layer of undoped gan and N-type GaN layer arrival luminescent layer can be passed through, cause internal quantum efficiency to reduce.
Summary of the invention
In order to solve problems in the prior art, the embodiment of the invention provides a kind of epitaxial wafer of light emitting diode and its lifes
Long method.The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of epitaxial wafer of light emitting diode, the epitaxial wafer include substrate, with
And stack gradually buffer layer, layer of undoped gan, N-type GaN layer, luminescent layer, p-type GaN layer over the substrate, the buffering
Doped with Mg in layer.
Optionally, the buffer layer includes GaN layer, AlGaN layer, InGaN layer, AlInGaN layers, alternately stacked InGaN
One of layer and AlGaN layer.
Optionally, it the doping concentration of Mg one of in the following way variation in the buffer layer: remains unchanged, along institute
The stacking direction for stating epitaxial wafer gradually increases, gradually decreases, along the stacking direction of the epitaxial wafer along the stacking of the epitaxial wafer
Direction, which first gradually increases, to be gradually decreased again, alternately becomes the one of two kinds of different levels of doping along the stacking direction of the epitaxial wafer
Kind.
Optionally, Mg is entrained in the entire buffer layer or Mg doping is in the buffer layer close to the substrate
Part in or Mg doping in the buffer layer in the part of the layer of undoped gan.
Optionally, in the buffer layer Mg doping concentration be less than the p-type GaN layer in P-type dopant doping concentration.
Optionally, the buffer layer with a thickness of 10~1000nm.
Optionally, the layer of undoped gan with a thickness of 50nm or more.
Optionally, the material of the substrate uses one of Si, sapphire, SiC.
On the other hand, the embodiment of the invention provides a kind of growing method of the epitaxial wafer of light emitting diode, the growths
Method includes:
Successively grown buffer layer, layer of undoped gan, N-type GaN layer, luminescent layer, p-type GaN layer on substrate；
Wherein, doped with Mg in the buffer layer.
Optionally, the growth temperature of the buffer layer is 700~1100 DEG C.
Technical solution provided in an embodiment of the present invention has the benefit that
By adulterating Mg in buffer layer, Mg can turn to three dimensional growth, shape from two-dimensional growth with the material of inducing buffer layer
At the crystal grain of three-dimensional island, it is no longer necessary to which buffer layer uses the growth pattern of low-temp low-pressure, and the growth temperature of buffer layer can mention
Height improves the crystal quality of epitaxial wafer to reduce the generation of the lattice defects such as edge dislocation, screw dislocation, improves the interior amount of LED
Sub- efficiency and antistatic effect.And layer of undoped gan is provided between buffer layer and N-type GaN layer, layer of undoped gan can be with
Play the role of partition, avoids adulterating the electron injection luminescent layer recombination luminescence in Mg influence N-type GaN layer in buffer layer.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of the epitaxial wafer for light emitting diode that the embodiment of the present invention one provides；
Fig. 2 a- Fig. 2 e is the variation schematic diagram of the doping concentration of Mg in the buffer layer of the offer of the embodiment of the present invention one；
Fig. 3 a- Fig. 3 c is the distribution schematic diagram of the doping position of Mg in the buffer layer of the offer of the embodiment of the present invention one；
Fig. 4 is a kind of process signal of the growing method of the epitaxial wafer of light emitting diode provided by Embodiment 2 of the present invention
Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
The embodiment of the invention provides a kind of epitaxial wafers of light emitting diode, referring to Fig. 1, the epitaxial wafer include substrate 1, with
And it is sequentially laminated on buffer layer 2, layer of undoped gan 3, N-type GaN layer 4, luminescent layer 5, p-type GaN layer 6 on substrate 1.
In the present embodiment, doped with Mg in buffer layer.
Specifically, in buffer layer Mg doping concentration be less than p-type GaN layer in P-type dopant doping concentration.
Optionally, buffer layer may include GaN layer, AlGaN layer, InGaN layer, AlInGaN layers, alternately stacked InGaN
One of layer and AlGaN layer.
Optionally, the doping concentration of Mg can one of in the following way variation in buffer layer: remaining unchanged (as schemed
Shown in 2a), along the stacking direction of epitaxial wafer gradually increase (as shown in Figure 2 b), gradually decreased (such as along the stacking direction of epitaxial wafer
Shown in Fig. 2 c), along the stacking direction of epitaxial wafer first gradually increase and gradually decrease (as shown in Figure 2 d) again, along the stacking side of epitaxial wafer
Become one kind of two kinds of different levels of doping (as shown in Figure 2 e) to alternating.
Optionally, Mg can be entrained in entire buffer layer (as shown in Figure 3a), can also be entrained in close in buffer layer
In the part of substrate (as shown in Figure 3b), it can also be entrained in buffer layer in the part of layer of undoped gan (such as Fig. 3 c institute
Show).
Optionally, the thickness of buffer layer can be 10~1000nm.
Optionally, the material of substrate can use one of Si, sapphire, SiC, and the present invention is especially suitable for this linings
Bottom and the big epitaxial wafer of GaN lattice mismatch.
Optionally, the thickness of layer of undoped gan can be 50nm or more, to play between buffer layer and N-type GaN layer
The effect of partition avoids the hole of the electron injection luminescent layer in the hole influence N-type GaN layer in buffer layer and p-type GaN layer multiple
It closes and shines.
Optionally, luminescent layer may include several luminous sublayers stacked gradually, and luminous sublayer includes quantum well layer and layer
The quantum barrier layer being stacked on quantum well layer.
Specifically, can be using quantum well layer as InGaN layer, quantum barrier layer is GaN layer；Can also using quantum well layer as InGaN layer,
Quantum barrier layer is AlGaN layer；Can be using quantum well layer as GaN layer, quantum barrier layer is AlGaN layer.
Specifically, N-type GaN layer can be using Si as N type dopant, and p-type GaN layer can be adulterated using Mg as p-type
Agent.
Optionally, which can also include being layered in stress release layer between N-type GaN layer and luminescent layer, such as by
Superlattice layer made of InGaN layer and GaN layer are alternately laminated.
Optionally, which can also include the electronic barrier layer being layered between luminescent layer and p-type GaN layer, such as p-type
AlGaN layer.
Optionally, which can also include the p-type contact layer being layered in p-type GaN layer.
The embodiment of the present invention can be turned to the material of inducing buffer layer from two-dimensional growth by adulterating Mg, Mg in buffer layer
Three dimensional growth forms the crystal grain of three-dimensional island, it is no longer necessary to which buffer layer uses the growth pattern of low-temp low-pressure, the growth of buffer layer
Temperature can be improved, to reduce the generation of the lattice defects such as edge dislocation, screw dislocation, improves the crystal quality of epitaxial wafer, mentions
The internal quantum efficiency and antistatic effect of high LED.And layer of undoped gan is provided between buffer layer and N-type GaN layer, it does not mix
Miscellaneous GaN layer can play the role of partition, avoid the electron injection luminescent layer adulterated in Mg influence N-type GaN layer in buffer layer multiple
It closes and shines.
Embodiment two
The embodiment of the invention provides a kind of growing methods of the epitaxial wafer of light emitting diode, are suitable for growth embodiment one
The epitaxial wafer of offer.High-purity H is used when realization2Or N2As carrier gas, using TMGa, TMAl, TMIn and NH3Respectively as Ga
Source, the source Al, the source In and the source N, using SiH4And Cp2Mg is respectively as N type dopant and P-type dopant, using Organometallic Chemistry
Vapor deposition apparatus or other equipment complete epitaxial wafer growth.
Specifically, referring to fig. 4, which includes:
Step 201: grown buffer layer on substrate.
In the present embodiment, doped with Mg in buffer layer.
Specifically, in buffer layer Mg doping concentration be less than p-type GaN layer in P-type dopant doping concentration.
Optionally, buffer layer may include GaN layer, AlGaN layer, InGaN layer, AlInGaN layers, alternately stacked InGaN
One of layer and AlGaN layer.
Optionally, the doping concentration of Mg can one of in the following way variation in buffer layer: remaining unchanged, along outer
The stacking direction for prolonging piece gradually increases, gradually decreases, first gradually increases along the stacking direction of epitaxial wafer along the stacking direction of epitaxial wafer
Add and gradually decreases again, alternately becomes one kind of two kinds of different levels of doping along the stacking direction of epitaxial wafer.
Optionally, Mg can be entrained in entire buffer layer, can also be entrained in buffer layer in the part of substrate,
It can also be entrained in buffer layer in the part of layer of undoped gan.
Optionally, the material of substrate can use one of Si, sapphire, SiC, and the present invention is especially suitable for this linings
Bottom and the big epitaxial wafer of GaN lattice mismatch.
Optionally, the thickness of buffer layer can be 10~1000nm.
Optionally, which may include:
H by substrate at 1300 DEG C2Heat treatment 10 minutes is carried out under atmosphere, to clean substrate surface；
The buffer layer doped with Mg that growth a layer thickness is 20~300nm on substrate.
Specifically, growth a layer thickness is the buffer layer doped with Mg of 20~300nm on substrate, may include:
The GaN layer that growth a layer thickness is 100nm on substrate；
The GaN layer for the doping Mg that a layer thickness is 200nm is grown in GaN layer.
Step 202: growing layer of undoped gan on the buffer layer.
Optionally, the thickness of layer of undoped gan can be 50nm or more, to play between buffer layer and N-type GaN layer
The effect of partition avoids the hole of the electron injection luminescent layer in the hole influence N-type GaN layer in buffer layer and p-type GaN layer multiple
It closes and shines.
Specifically, which may include:
Temperature is adjusted to 1100 DEG C, grows the undoped GaN layer that a layer thickness is 3 μm on the buffer layer.
In practical applications, undoped GaN layer can also be replaced using undoped AlGaN layer.
Step 203: N-type GaN layer is grown in layer of undoped gan.
Specifically, N-type GaN layer can be using Si as N type dopant.
Specifically, which may include:
The GaN layer for the doping Si that a layer thickness is 2 μm is grown in layer of undoped gan.
Step 204: growing luminescent layer in N-type GaN layer.
Optionally, luminescent layer may include several luminous sublayers stacked gradually, and luminous sublayer includes quantum well layer and layer
The quantum barrier layer being stacked on quantum well layer.
Specifically, can be using quantum well layer as InGaN layer, quantum barrier layer is GaN layer；Can also using quantum well layer as InGaN layer,
Quantum barrier layer is AlGaN layer；Can be using quantum well layer as GaN layer, quantum barrier layer is AlGaN layer.
For example, quantum barrier layer is the GaN layer of 10~20nm, quantum well layer is the InGaN layer and In constituent content of 1~5nm
It is 5%~10%.
Step 205: growth P-type GaN layer on the light-emitting layer.
Specifically, p-type GaN layer can be using Mg as P-type dopant.
Specifically, which may include:
The GaN layer for the doping Mg that growth thickness is 300nm on the light-emitting layer.
The embodiment of the present invention can be turned to the material of inducing buffer layer from two-dimensional growth by adulterating Mg, Mg in buffer layer
Three dimensional growth forms the crystal grain of three-dimensional island, it is no longer necessary to which buffer layer uses the growth pattern of low-temp low-pressure, the growth of buffer layer
Temperature can be improved, to reduce the generation of the lattice defects such as edge dislocation, screw dislocation, improves the crystal quality of epitaxial wafer, mentions
The internal quantum efficiency and antistatic effect of high LED.And layer of undoped gan is provided between buffer layer and N-type GaN layer, it does not mix
Miscellaneous GaN layer can play the role of partition, avoid the electron injection luminescent layer adulterated in Mg influence N-type GaN layer in buffer layer multiple
It closes and shines.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (5)
1. a kind of epitaxial wafer of light emitting diode, the epitaxial wafer includes substrate and stacks gradually over the substrate slow
Rush layer, layer of undoped gan, N-type GaN layer, luminescent layer, p-type GaN layer, which is characterized in that the buffer layer includes stacking gradually
The GaN layer of GaN layer with a thickness of 100nm and the doping Mg with a thickness of 200nm, the layer of undoped gan with a thickness of 3 μm, institute
The growth temperature for stating buffer layer is 700 ~ 1100 DEG C.
2. epitaxial wafer according to claim 1, which is characterized in that the doping concentration of Mg is according to lower section in the buffer layer
The variation of one of formula: it remains unchanged, gradually increase, along the stacking direction of the epitaxial wafer along the stacking direction of the epitaxial wafer
Gradually decrease, along the epitaxial wafer stacking direction first gradually increase gradually decrease again, along the epitaxial wafer stacking direction hand over
For the one kind for becoming two kinds of different levels of doping.
3. epitaxial wafer according to claim 1 or 2, which is characterized in that the doping concentration of Mg is less than institute in the buffer layer
State the doping concentration of P-type dopant in p-type GaN layer.
4. epitaxial wafer according to claim 1 or 2, which is characterized in that the material of the substrate uses Si, sapphire, SiC
One of.
5. a kind of growing method of the epitaxial wafer of light emitting diode, which is characterized in that the growing method includes:
Successively grown buffer layer, layer of undoped gan, N-type GaN layer, luminescent layer, p-type GaN layer on substrate；
Wherein, the buffer layer includes the GaN layer with a thickness of 100nm stacked gradually and the GaN of the doping Mg with a thickness of 200nm
Layer, the layer of undoped gan with a thickness of 3 μm, the growth temperature of the buffer layer is 700 ~ 1100 DEG C.
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106374021A (en) * | 2016-12-02 | 2017-02-01 | 湘能华磊光电股份有限公司 | LED epitaxial growth method based on sapphire graphical substrate |
| CN107195736B (en) * | 2017-05-27 | 2019-12-31 | 华灿光电（浙江）有限公司 | Gallium nitride-based light emitting diode epitaxial wafer and growth method thereof |
| CN108717954B (en) * | 2018-04-02 | 2020-03-27 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and growth method thereof |
| CN109509820A (en) * | 2018-11-23 | 2019-03-22 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN109920883B (en) * | 2019-01-23 | 2020-10-16 | 华灿光电（浙江）有限公司 | Gallium nitride-based light emitting diode epitaxial wafer and manufacturing method thereof |
| CN109980055B (en) * | 2019-04-17 | 2022-02-01 | 湘能华磊光电股份有限公司 | LED epitaxial growth method capable of reducing warping |
| CN112670378A (en) * | 2020-12-31 | 2021-04-16 | 深圳第三代半导体研究院 | Light emitting diode and manufacturing method thereof |
| CN114725256B (en) * | 2022-06-09 | 2022-09-16 | 江西兆驰半导体有限公司 | III-nitride epitaxial structure and preparation method thereof |
| CN115662876A (en) * | 2022-08-31 | 2023-01-31 | 珠海庞纳微半导体科技有限公司 | Epitaxial structure and preparation method thereof |
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| JP2007273659A (en) * | 2006-03-31 | 2007-10-18 | Showa Denko Kk | GaN BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LAMP |
| CN101276864A (en) * | 2007-03-30 | 2008-10-01 | 晶元光电股份有限公司 | Luminous element |
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