CN107275450B - A kind of ultraviolet LED epitaxial structure - Google Patents
A kind of ultraviolet LED epitaxial structure Download PDFInfo
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- CN107275450B CN107275450B CN201710600473.9A CN201710600473A CN107275450B CN 107275450 B CN107275450 B CN 107275450B CN 201710600473 A CN201710600473 A CN 201710600473A CN 107275450 B CN107275450 B CN 107275450B
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- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000004888 barrier function Effects 0.000 claims abstract description 18
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 3
- 230000003139 buffering effect Effects 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 5
- 239000007924 injection Substances 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000005428 wave function Effects 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000005699 Stark effect Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XKMRRTOUMJRJIA-UHFFFAOYSA-N ammonia nh3 Chemical group N.N XKMRRTOUMJRJIA-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001473 noxious effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000005701 quantum confined stark effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000031068 symbiosis, encompassing mutualism through parasitism Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The application provides a kind of ultraviolet LED epitaxial structure, comprising: substrate；Successively grow undoped buffer layer, N-type AlGaN layer, multi-quantum pit structure, superlattice structure, electronic barrier layer, p-type AlGaN layer and p-type GaN layer over the substrate；Wherein, the superlattice structure includes at least one layer of first AlGaN layer and at least one layer of second AlGaN layer, and first AlGaN layer and described second are alternately superimposed.Due to increasing setting superlattice structure between multiple quantum wells and electronic barrier layer, the strain between the last one quantum of active area base and electronic barrier layer can be effectively relieved in superlattice structure, inhibit electronics leakage, increase hole injection efficiency, to improve the optical output power and internal quantum efficiency of ultraviolet LED, make it that more preferably luminescent properties be presented.
Description
Technical field
The present invention relates to field of semiconductor photoelectron technique more particularly to a kind of ultraviolet LED (Light-Emitting
Diode, light emitting diode) epitaxial structure.
Background technique
Ultraviolet (UV) LED is one kind of LED, with the traditional gas ultraviolet source such as the mercury lamp and xenon lamp that use on the market at present
It compares, it is ununiform by opening and closing times influence, energy height, irradiation that ultraviolet LED has extra long life, cold light source, non-thermal radiation, service life
It is high-efficient, without powerful advantages such as noxious materials, it is made most to be hopeful to replace existing ultraviolet high-pressure mercury-vapor lamp, becomes next-generation
Ultraviolet source.
Ultraviolet LED medical treatment, sterilization, printing, illumination, data storage and in terms of have major application valence
Value.365nm has extensive basis as the most typical wavelength of UV UV-A (320nm~400nm) wave band in ultra violet applications.
And realized by the preparation of high-power 365nm UV LED chip and industrialization, it will provide demonstration to ultraviolet products application and make
With.For the ultraviolet space of exploiting market of deeper wave band, LED industry development is driven.
But current ultraviolet LED is in technology period of expansion, the problem of breaking through is difficult to there is also some, as AlGaN base is ultraviolet
The internal quantum efficiency and transmission power of LED is relatively low.
Therefore, the internal quantum efficiency and transmission power for how improving AlGaN base ultraviolet LED become urgent problem to be solved.
Summary of the invention
In view of this, the present invention provides a kind of ultraviolet LED epitaxial structure, to solve the interior amount of ultraviolet LED in the prior art
Sub- efficiency and the lower problem of transmission power.
To achieve the above object, the invention provides the following technical scheme:
A kind of ultraviolet LED epitaxial structure, comprising:
Substrate；
Successively grow undoped buffer layer, N-type AlGaN layer, multi-quantum pit structure, superlattices knot over the substrate
Structure, electronic barrier layer, p-type AlGaN layer and p-type GaN layer；
Wherein, the superlattice structure includes the second AlGaN layer of at least one layer of first AlGaN layer and at least one layer, described
First AlGaN layer and second AlGaN layer are alternately superimposed.
Preferably, the multi-quantum pit structure includes the Al in 6 periods of alternating growth0.36Ga0.64N/Al0.5Ga0.5N。
Preferably, first AlGaN layer is AlxGa1-xN layers, second AlGaN layer is Al0.36Ga0.64N layers, and institute
State the Al that the first AlGaN layer is grown in the multiple quantum wells0.5Ga0.5N layer surface.
Preferably, the value range of the x is 0.51≤x≤0.57.
Preferably, the superlattice structure includes the Al in 7 periodsxGa1-xN/Al0.36Ga0.64N, every layer of AlxGa1-xN layers
With every layer of Al0.36Ga0.64N layers of thickness is 1nm, and doping concentration is 5 × 1017cm-3, growth temperature is 1020 DEG C.
Preferably, the substrate is the Sapphire Substrate in the face C.
Preferably, the undoped buffer layer is Al0.5Ga0.5N buffer layer, with a thickness of 1.5 μm, growth temperature is 530 DEG C,
And the Al0.5Ga0.5N buffer layer recrystallizes for constant temperature 6 minutes at 1050 DEG C.
Preferably, the N-type AlGaN layer is N-type Al0.5Ga0.5N layers, with a thickness of 3.0 μm, doping concentration is 5 × 1018cm-3, growth temperature is 1050 DEG C.
Preferably, the growth temperature in the multiple quantum wells is 1020 DEG C, wherein every layer of Al0.36Ga0.64N with a thickness of 8nm,
Every layer of Al0.5Ga0.5N layers with a thickness of 3nm.
Preferably, the electronic barrier layer is the p-type Al of 10nm thickness0.65Ga0.35N layers, doping concentration is 2 × 1017cm-3,
Growth temperature is 990 DEG C.
Preferably, the p-type AlGaN layer is the p-type Al of 10nm thickness0.5Ga0.5N layers, doping concentration is 5 × 1017cm-3, raw
Long temperature is 990 DEG C.
Preferably, the p-type GaN layer, with a thickness of 100nm, growth temperature is 990 DEG C, and doping concentration is 1 × 1018cm-3。
It can be seen via above technical scheme that ultraviolet LED epitaxial structure provided by the invention, hinders in multiple quantum wells and electronics
Increase setting superlattice structure between barrier, the superlattice structure can be effectively relieved the last one quantum of active area and build and electricity
Strain between sub- barrier layer, inhibit electronics leakage, increase hole injection efficiency, thus improve ultraviolet LED optical output power and
Internal quantum efficiency makes it that more preferably luminescent properties be presented.In addition, being built between electronic barrier layer by reducing the last one quantum
The polarized electric field for straining to be obviously reduced in active area quantum well structure beaten, and increase electrons and holes wave function spatially
Duplication, reduce quantum confined stark effect so that active area electrons and holes occur radiation recombination probability
Increase, and then improves the internal quantum efficiency and transmission power of ultraviolet LED epitaxial structure.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of ultraviolet LED epitaxial structure schematic diagram provided in an embodiment of the present invention；
Fig. 2 is a kind of structural schematic diagram of superlattice structure provided in an embodiment of the present invention.
Specific embodiment
Just as described in the background section, the internal quantum efficiency of AlGaN base ultraviolet LED and transmission power phase in the prior art
To lower.
The low reason of AlGaN base ultraviolet LED light source luminous efficiency mainly has at present: the current-carrying of high Al contents AlGaN material
Sub- injection efficiency is low, constrains the raising of ultraviolet LED internal quantum efficiency；The structural property of high Al contents AlGaN material determines it
Light extraction efficiency is low.
Based on this, the present invention provides a kind of ultraviolet LED epitaxial structure characterized by comprising
Substrate；
Successively grow undoped buffer layer, N-type AlGaN layer, multi-quantum pit structure, superlattices knot over the substrate
Structure, electronic barrier layer, p-type AlGaN layer and p-type GaN layer；
Wherein, the superlattice structure includes the second AlGaN layer of at least one layer of first AlGaN layer and at least one layer, described
First AlGaN layer and second AlGaN layer are alternately superimposed.
It is super brilliant to increase setting between multiple quantum wells and electronic blocking ability layer for ultraviolet LED epitaxial structure provided by the invention
The strain between the last one quantum of active area base and electronic barrier layer can be effectively relieved in lattice structure, the superlattice structure,
Inhibit electronics leakage, increasing hole injection efficiency to improve the optical output power and internal quantum efficiency of ultraviolet LED makes its presentation
More preferably luminescent properties.In addition, being obviously reduced by reducing the strain beaten between the last one quantum base and electronic barrier layer
Polarized electric field in active area quantum well structure, and increase the Duplication of electrons and holes wave function spatially, the amount of reducing
Son limitation Stark effect, so that the probability that radiation recombination occurs for active area electrons and holes increases, and then improves purple
The internal quantum efficiency and transmission power of outer LED epitaxial structure.
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
It referring to Figure 1, is a kind of ultraviolet LED epitaxial structure provided in an embodiment of the present invention, comprising: substrate 1；Successively grow
Undoped buffer layer 2, N-type AlGaN layer 3, multi-quantum pit structure 4, superlattice structure 5, electronic barrier layer 6, P on substrate 1
Type AlGaN layer 7 and p-type GaN layer 8；Wherein, superlattice structure 5 includes at least one layer of first AlGaN layer and at least one layer second
AlGaN layer, the first AlGaN layer and the second AlGaN layer are alternately superimposed.
It should be noted that the specific structure of superlattice structure 5 is not limited in the embodiment of the present invention, optionally, such as Fig. 2 institute
Show, superlattice structure 5 includes at least one layer the first AlGaN layer --- AlxGa1-xN layers of a and at least one layer of second AlGaN layer ---
Al0.36Ga0.64N layers of b, AlxGa1-xN layers of a and Al0.36Ga0.64N layers of b are alternately superimposed, wherein the first AlGaN layer --- AlxGa1-xN
Layer a is grown in the surface of the multiple quantum wells.
The overlapping configuration of the first AlGaN layer and the second AlGaN layer in superlattice structure is not limited in the embodiment of the present invention
Period optionally, in the present embodiment includes the Al in 7 periodsxGa1-xN/Al0.36Ga0.64N.It is not limited in the embodiment of the present invention
AlxGa1-xThe value range of x in N layers, optionally, inventor obtain when the value range of x being 0.51≤x≤0.57 by simulation
When, and in superlattice structure every layer of structure with a thickness of identical, be 1nm, doping concentration is 5 × 1017cm-3, growth temperature is
1020 DEG C, so that the internal quantum efficiency of ultraviolet LED epitaxial structure and output power raising are more obvious.
It should be noted that not limited in the present invention undoped with buffer layer, N-type AlGaN layer, multi-quantum pit structure, electricity
The component of various substances in sub- barrier layer, p-type AlGaN layer and p-type GaN layer.In order to the value range of x be 0.51≤x≤
When 0.57, internal quantum efficiency and the output power raising of ultraviolet LED epitaxial structure are more obvious, optional in the present embodiment, not
Doping buffer layer is Al0.5Ga0.5N buffer layer, with a thickness of 1.5 μm, growth temperature is 530 DEG C, and the Al0.5Ga0.5N buffer layer
It is recrystallized within constant temperature 6 minutes at 1050 DEG C.N-type AlGaN layer is N-type Al0.5Ga0.5N layers, with a thickness of 3.0 μm, doping concentration is 5 ×
1018cm-3, growth temperature is 1050 DEG C.Growth temperature in multiple quantum wells is 1020 DEG C, wherein every layer of Al0.36Ga0.64N thickness
For 8nm, every layer of Al0.5Ga0.5N layers with a thickness of 3nm.The structure of multiple quantum wells includes 6 periods of alternating growth in the present embodiment
Al0.36Ga0.64N/Al0.5Ga0.5N.In other embodiments, the period of multi-quantum pit structure can also be other numerical value, this reality
It applies in example and does not limit this.Electronic barrier layer is the p-type Al of 10nm thickness0.65Ga0.35N layers, doping concentration is 2 × 1017cm-3,
Growth temperature is 990 DEG C.P-type AlGaN layer is the p-type Al of 10nm thickness0.5Ga0.5N layers, doping concentration is 5 × 1017cm-3, growth
Temperature is 990 DEG C.P-type GaN layer, with a thickness of 100nm, growth temperature is 990 DEG C, and doping concentration is 1 × 1018cm-3.In this hair
, can be different according to the material component of different structure sheafs in bright other embodiments, and different x values are set, so that ultraviolet
The internal quantum efficiency and output power of LED epitaxial structure improve more obvious.
The specific material for not limiting substrate in the present embodiment, can be selected according to actual needs, it should be noted that
Optional in the present embodiment due to sapphire translucency with higher, the substrate is sapphire.What sapphire was often employed
There are the face A, the face C, the face R in section.Lattice constant fitting percentage between the sapphire face C and iii-v and II-VI group deposition film
It is small, while meeting GaN and building requirement resistant to high temperature in brilliant processing procedure, therefore, optional in the present embodiment, the substrate is the indigo plant in the face C
Jewel substrate.
It is super brilliant to increase setting between multiple quantum wells and electronic blocking ability layer for ultraviolet LED epitaxial structure provided by the invention
The strain between the last one quantum of active area base and electronic barrier layer can be effectively relieved in lattice structure, the superlattice structure,
Inhibit electronics leakage, increasing hole injection efficiency to improve the optical output power and internal quantum efficiency of ultraviolet LED makes its presentation
More preferably luminescent properties.In addition, being obviously reduced by reducing the strain beaten between the last one quantum base and electronic barrier layer
Polarized electric field in active area quantum well structure, and increase the Duplication of electrons and holes wave function spatially, the amount of reducing
Son limitation Stark effect, so that the probability that radiation recombination occurs for active area electrons and holes increases, and then improves purple
The internal quantum efficiency and transmission power of outer LED epitaxial structure.
For the deep ultraviolet LED structure of above-mentioned offer, the production method that the present invention does not limit ultraviolet LED epitaxial structure can
Choosing, it can be using MOCVD (Metal-organic Chemical Vapor DePosition, metallo-organic compound chemistry
Vapor deposition) each layer structure of equipment making.Specifically, the embodiment of the present invention also provides a kind of production ultraviolet LED epitaxy junction
The production method of structure, comprising:
Firstly, Sapphire Substrate is placed in reaction chamber.
Then, in 1090 DEG C of logical high-purity hydrogen high temperature sintering substrates.
Then, the source Ga, the source Al and the undoped Al of nitrogen source growing low temperature are led at 530 DEG C0.5Ga0.5N buffer layer, it is undoped
Al0.5Ga0.5The thickness of N buffer layer is about 1.5 μm.Then, 1050 DEG C and constant temperature 6 minutes or so are warming up to, so that undoped
Al0.5Ga0.5N buffer layer recrystallization.
Then, the source Ga, the source Al, ammonia and silane SiH are passed through at 1050 DEG C4, grow N-type Al0.5Ga0.5N layers, doping
Concentration is 5 × 1018cm-3, with a thickness of 3 μm.
Next, cool to 1020 DEG C and be passed through the source Ga, the source Al, nitrogen source growth 8nm thickness Al0.36Ga0.64N quantum is built.It connects
, the Al of 3nm thickness is grown at 1020 DEG C0.5Ga0.5N Quantum Well.First two steps step is repeated, symbiosis long 6 periods
Al0.36Ga0.64N/Al0.5Ga0.5N multi-quantum pit structure.
And then, 990 DEG C are cooled to, the source Al, the source Ga, ammonia and the source Mg are passed through, grows AlxGa1-xN/Al0.36Ga0.64N is super
Lattice structure.AlxGa1-xN/Al0.36Ga0.64In N superlattice structure, the value range of x is 0.51≤x≤0.57.Superlattices
Structure is AlxGa1-xN/Al0.36Ga0.647 periods of both N alternating growth, the thickness of every layer of AlGaN are 1nm, doping concentration 5
×1017cm-3。
Then, at 990 DEG C, the p-type Al of one layer of 10nm thickness is grown on superlattice structure0.65Ga0.35N electronic blocking
Layer, doping concentration are 2 × 1017cm-3。
Then, at 990 DEG C, the p-type Al of one layer of 10nm thickness is grown0.5Ga0.5N layers, doping concentration is 5 × 1017cm-3。
Finally, growing the p-type GaN layer of one layer of 100nm thickness at 990 DEG C, doping concentration is 1 × 1018cm-3, and 700
DEG C annealing 20 minutes, obtain the p-type GaN layer of high hole concentration.
It should be noted that the concrete form in the source Ga, the source Al is not limited in the present embodiment, and optionally, institute in the present embodiment
For trimethyl gallium TMGa, the source Al is trimethyl aluminium TMAl in the source Ga used, and nitrogen source is ammonia NH3, carrier gas H2, N-type and p-type are mixed
Miscellaneous source is respectively silane SiH4With two luxuriant magnesium Cp2Mg。
AlGaN superlattice structure is used by above-mentioned ultraviolet LED epitaxial structure, can be reduced polarity effect, weakens electronics resistance
Barrier EBL is to the band curvature between p-type AlGaN layer, so that Red Shift Phenomena is improved, shorter emission wavelength is presented, hair
Luminous intensity also increases with it；Output power can be improved significantly, and output power increases with the amplification of electric current, present preferable
Power-performance；The compound complexity of electrons and holes, thus required energy decline are reduced, so that having smaller open
Open voltage；Due to the design of new construction, it is smaller to may make that chip changes with its voltage of the increase of electric current, shows better two pole
Pipe performance；Furthermore it can more effectively realize that p-type is adulterated, enhance electric conductivity, promote resistance to reduce, to reduce operating voltage, this has
It is energy saving conducive to the energy consumption for reducing UV LED chip.
It should be noted that all the embodiments in this specification are described in a progressive manner, each embodiment weight
Point explanation is the difference from other embodiments, and the same or similar parts between the embodiments can be referred to each other.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (12)
1. a kind of ultraviolet LED epitaxial structure characterized by comprising
Substrate；
Successively grow undoped buffer layer, N-type AlGaN layer, multi-quantum pit structure, superlattice structure, electricity over the substrate
Sub- barrier layer, p-type AlGaN layer and p-type GaN layer；
Wherein, the superlattice structure includes at least one layer of first AlGaN layer and at least one layer of second AlGaN layer, and described first
AlGaN layer and second AlGaN layer are alternately superimposed, and the thickness of every layer of structure is identical in the superlattice structure, and described first
Al component is higher than Al component in the second AlGaN layer in AlGaN layer, and the first AlGaN layer is grown in the surface of multi-quantum pit structure.
2. ultraviolet LED epitaxial structure according to claim 1, which is characterized in that the multi-quantum pit structure includes alternating
The Al in 6 periods of growth0.36Ga0.64N/Al0.5Ga0.5N。
3. ultraviolet LED epitaxial structure according to claim 2, which is characterized in that first AlGaN layer is AlxGa1-xN
Layer, second AlGaN layer are Al0.36Ga0.64N layers, and first AlGaN layer is grown in the multiple quantum wells
Al0.5Ga0.5N layer surface.
4. ultraviolet LED epitaxial structure according to claim 3, which is characterized in that the value range of the x is 0.51≤x
≤0.57。
5. ultraviolet LED epitaxial structure according to claim 4, which is characterized in that the superlattice structure includes 7 periods
AlxGa1-xN/Al0.36Ga0.64N, every layer of AlxGa1-xN layers and every layer of Al0.36Ga0.64N layers of thickness is 1nm, doping concentration
It is 5 × 1017cm-3, growth temperature is 1020 DEG C.
6. ultraviolet LED epitaxial structure described in -5 any one according to claim 1, which is characterized in that the substrate is the face C
Sapphire Substrate.
7. ultraviolet LED epitaxial structure described in -5 any one according to claim 1, which is characterized in that described undoped with buffering
Layer is Al0.5Ga0.5N buffer layer, with a thickness of 1.5 μm, growth temperature is 530 DEG C, and the Al0.5Ga0.5N buffer layer is at 1050 DEG C
It recrystallizes within constant temperature 6 minutes.
8. ultraviolet LED epitaxial structure described in -5 any one according to claim 1, which is characterized in that the N-type AlGaN layer
For N-type Al0.5Ga0.5N layers, with a thickness of 3.0 μm, doping concentration is 5 × 1018cm-3, growth temperature is 1050 DEG C.
9. ultraviolet LED epitaxial structure according to claim 2, which is characterized in that the growth temperature in the multiple quantum wells
It is 1020 DEG C, wherein every layer of Al0.36Ga0.64N is with a thickness of 8nm, every layer of Al0.5Ga0.5N layers with a thickness of 3nm.
10. ultraviolet LED epitaxial structure according to claim 1, which is characterized in that the electronic barrier layer is 10nm thick
P-type Al0.65Ga0.35N layers, doping concentration is 2 × 1017cm-3, growth temperature is 990 DEG C.
11. ultraviolet LED epitaxial structure according to claim 1, which is characterized in that the p-type AlGaN layer is 10nm thick
P-type Al0.5Ga0.5N layers, doping concentration is 5 × 1017cm-3, growth temperature is 990 DEG C.
12. ultraviolet LED epitaxial structure according to claim 1, which is characterized in that the p-type GaN layer, with a thickness of
100nm, growth temperature are 990 DEG C, and doping concentration is 1 × 1018cm-3。
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| CN109920896B (en) * | 2019-01-23 | 2021-04-06 | 华灿光电（浙江）有限公司 | Gallium nitride-based light emitting diode epitaxial wafer and manufacturing method thereof |
| CN110112273B (en) * | 2019-05-10 | 2020-06-30 | 马鞍山杰生半导体有限公司 | Deep ultraviolet LED epitaxial structure, preparation method thereof and deep ultraviolet LED |
| CN111403568A (en) * | 2020-03-25 | 2020-07-10 | 江西新正耀光学研究院有限公司 | Ultraviolet L ED epitaxial structure and preparation method thereof |
| CN111769182B (en) * | 2020-07-10 | 2022-03-15 | 中国科学院半导体研究所 | Surface plasmon GaN-based LED epitaxial structure and preparation method and application thereof |
| CN113257965B (en) * | 2021-06-25 | 2021-10-29 | 至芯半导体(杭州)有限公司 | AlInGaN semiconductor light-emitting device |
| CN113725332B (en) * | 2021-08-11 | 2024-04-26 | 广州市众拓光电科技有限公司 | Ultraviolet LED epitaxial structure and preparation method and application thereof |
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| JP2005197293A (en) * | 2003-12-26 | 2005-07-21 | Toyoda Gosei Co Ltd | Group iii nitride-based compound semiconductor light emitting element and its fabrication process |
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| CN102867895A (en) * | 2012-09-17 | 2013-01-09 | 聚灿光电科技(苏州)有限公司 | Epitaxial structure for effectively increasing side light emitting efficiency of LED and manufacture method of epitaxial structure |
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| JP2005197293A (en) * | 2003-12-26 | 2005-07-21 | Toyoda Gosei Co Ltd | Group iii nitride-based compound semiconductor light emitting element and its fabrication process |
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