CN107275450A - A kind of ultraviolet LED epitaxial structure - Google Patents
A kind of ultraviolet LED epitaxial structure Download PDFInfo
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- CN107275450A CN107275450A CN201710600473.9A CN201710600473A CN107275450A CN 107275450 A CN107275450 A CN 107275450A CN 201710600473 A CN201710600473 A CN 201710600473A CN 107275450 A CN107275450 A CN 107275450A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
The application provides a kind of ultraviolet LED epitaxial structure, including：Substrate；Grow successively over the substrate undoped with cushion, N-type AlGaN layer, multi-quantum pit structure, superlattice structure, electronic barrier layer, p-type AlGaN layer and p-type GaN layer；Wherein, the superlattice structure includes at least one layer of first AlGaN layer and at least one layer of second AlGaN layer, and first AlGaN layer and described second are alternately superimposed.Because increase sets superlattice structure between MQW and electronic barrier layer, superlattice structure can effectively alleviate the strain between last quantum of active area base and electronic barrier layer, suppress electronics leakage, increase hole injection efficiency, so as to improve the optical output power and internal quantum efficiency of ultraviolet LED, make it that more preferably luminescent properties are presented.
Description
Technical field
The present invention relates to field of semiconductor photoelectron technique, more particularly to a kind of ultraviolet LED (Light-Emitting
Diode, light emitting diode) epitaxial structure.
Background technology
Ultraviolet (UV) LED is LED one kind, with the traditional gas ultraviolet source such as the mercury lamp and xenon lamp that use on the market at present
Compare, it is ununiform by opening and closing times influence, energy height, irradiation that ultraviolet LED possesses extra long life, cold light source, non-thermal radiation, life-span
Efficiency high, without powerful advantages such as noxious materials, makes it most be hopeful the existing ultraviolet high-pressure mercury-vapor lamp of substitution, as the next generation
Ultraviolet source.
Ultraviolet LED has major application valency in terms of medical treatment, sterilization, printing, illumination, data storage and secret communication
Value.365nm has extensive basis as the most typical wavelength of UV-A (320nm~400nm) wave band in ultra violet applications.
And the preparation by high-power 365nm UV LED chips is realized with industrialization, it will provide demonstration to ultraviolet products application and make
With.For the ultraviolet space of exploiting market of deeper wave band, LED industry development is driven.
But current ultraviolet LED is in technology period of expansion, and the problem of also being difficult to break through in the presence of some, such as AlGaN bases are ultraviolet
LED internal quantum efficiency and transmission power is relatively low.
Therefore, how to improve the internal quantum efficiency and transmission power of AlGaN base ultraviolet LEDs turns into urgent problem to be solved.
The content of the invention
In view of this, the present invention provides a kind of ultraviolet LED epitaxial structure, to solve the interior amount of ultraviolet LED in the prior art
The problem of sub- efficiency and relatively low transmission power.
To achieve the above object, the present invention provides following technical scheme：
A kind of ultraviolet LED epitaxial structure, including：
Substrate；
Grow successively over the substrate undoped with cushion, N-type AlGaN layer, multi-quantum pit structure, superlattices knot
Structure, electronic barrier layer, p-type AlGaN layer and p-type GaN layer；
Wherein, the superlattice structure includes at least one layer of first AlGaN layer and at least one layer of second AlGaN layer, described
First AlGaN layer and described second is alternately superimposed.
Preferably, the multi-quantum pit structure includes the Al in 6 cycles of alternating growth0.36Ga0.64N/Al0.5Ga0.5N。
Preferably, first AlGaN layer is AlxGa1-xN layers, second AlGaN layer is Al0.36Ga0.64N layers, and institute
State the Al that the first AlGaN layer is grown in the MQW0.5Ga0.5N layer surfaces.
Preferably, the span of the x is 0.51≤x≤0.57.
Preferably, the superlattice structure includes the Al in 7 cyclesxGa1-xN/Al0.36Ga0.64N, every layer of AlxGa1-xN layers
With every layer of Al0.36Ga0.64N layers of thickness is 1nm, and doping concentration is 5 × 1017cm-3, growth temperature is 1020 DEG C.
Preferably, the substrate is the Sapphire Substrate in C faces.
Preferably, described is Al undoped with cushion0.5Ga0.5N cushions, thickness is 1.5 μm, and growth temperature is 530 DEG C,
And the Al0.5Ga0.5N cushions are recrystallized for 6 minutes in 1050 DEG C of constant temperature.
Preferably, the N-type AlGaN layer is N-type Al0.5Ga0.5N layers, thickness is 3.0 μm, and doping concentration is 5 × 1018cm-3, growth temperature is 1050 DEG C.
Preferably, the growth temperature in the MQW is 1020 DEG C, wherein, every layer of Al0.36Ga0.64N thickness is 8nm,
Every layer of Al0.5Ga0.5N thickness degree is 3nm.
Preferably, the electronic barrier layer is the thick p-type Al of 10nm0.65Ga0.35N layers, doping concentration is 2 × 1017cm-3,
Growth temperature is 990 DEG C.
Preferably, the p-type AlGaN layer is the thick p-type Al of 10nm0.5Ga0.5N layers, doping concentration is 5 × 1017cm-3, it is raw
Long temperature is 990 DEG C.
Preferably, the p-type GaN layer, thickness is 100nm, and growth temperature is 990 DEG C, and doping concentration is 1 × 1018cm-3。
Understand, the ultraviolet LED epitaxial structure that the present invention is provided, hindered in MQW and electronics via above-mentioned technical scheme
Increase sets superlattice structure between barrier, and the superlattice structure can effectively alleviate last quantum of active area base and electricity
Strain between sub- barrier layer, suppress electronics leakage, increase hole injection efficiency so that improve ultraviolet LED optical output power and
Internal quantum efficiency, makes it that more preferably luminescent properties are presented.In addition, being built by reducing last quantum between electronic barrier layer
The polarized electric field for straining to be obviously reduced in active area quantum well structure beaten, and increase electronics and hole wave functions spatially
Duplication, quantum confined stark effect is reduced, so that the probability of radiation recombination occurs for active area electronics and hole
Increase, and then improve the internal quantum efficiency and transmission power of ultraviolet LED epitaxial structure.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
Fig. 1 is a kind of ultraviolet LED epitaxial structure schematic diagram provided in an embodiment of the present invention；
Fig. 2 is a kind of structural representation of superlattice structure provided in an embodiment of the present invention.
Embodiment
Just as described in the background section, the internal quantum efficiency of AlGaN bases ultraviolet LED and transmission power phase in the prior art
To relatively low.
The reason for AlGaN base ultraviolet LED light source luminous efficiencies are low at present mainly has：The current-carrying of high Al contents AlGaN material
Sub- injection efficiency is low, constrains the raising of ultraviolet LED internal quantum efficiency；The structural property of high Al contents AlGaN material determines it
Light extraction efficiency is low.
Based on this, the present invention provides a kind of ultraviolet LED epitaxial structure, it is characterised in that including：
Substrate；
Grow successively over the substrate undoped with cushion, N-type AlGaN layer, multi-quantum pit structure, superlattices knot
Structure, electronic barrier layer, p-type AlGaN layer and p-type GaN layer；
Wherein, the superlattice structure includes at least one layer of first AlGaN layer and at least one layer of second AlGaN layer, described
First AlGaN layer and described second is alternately superimposed.
The ultraviolet LED epitaxial structure that the present invention is provided, increase sets super brilliant between MQW and electronic blocking ability layer
Lattice structure, the superlattice structure can effectively alleviate the strain between last quantum of active area base and electronic barrier layer,
Suppress electronics leakage, increase hole injection efficiency, so as to improve the optical output power and internal quantum efficiency of ultraviolet LED, it is presented
More preferably luminescent properties.In addition, being obviously reduced by reducing the strain beaten between last quantum base and electronic barrier layer
Polarized electric field in active area quantum well structure, and increase the Duplication of electronics and hole wave functions spatially, the amount of reducing
Son limitation Stark effect, so that the probability increase of radiation recombination occurs for active area electronics and hole, and then improves purple
The internal quantum efficiency and transmission power of outer LED epitaxial structure.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Fig. 1 is referred to, is a kind of ultraviolet LED epitaxial structure provided in an embodiment of the present invention, including：Substrate 1；Grow successively
On substrate 1 undoped with cushion 2, N-type AlGaN layer 3, multi-quantum pit structure 4, superlattice structure 5, electronic barrier layer 6, P
Type AlGaN layer 7 and p-type GaN layer 8；Wherein, superlattice structure 5 includes at least one layer of first AlGaN layer and at least one layer second
AlGaN layer, the first AlGaN layer and second is alternately superimposed.
It should be noted that the concrete structure of superlattice structure 5 is not limited in the embodiment of the present invention, optionally, such as Fig. 2 institutes
Show, superlattice structure 5 includes at least one layer of first AlGaN layer --- AlxGa1-xN layers of a and at least one layer of second AlGaN layer ---
Al0.36Ga0.64N layers of b, AlxGa1-xN layers of a and Al0.36Ga0.64N layers of b are alternately superimposed, wherein, the first AlGaN layer --- AlxGa1-xN
Layer a is grown in the surface of the MQW.
The overlapping configuration of the first AlGaN layer and the second AlGaN layer in superlattice structure is not limited in the embodiment of the present invention
Cycle, optionally, the present embodiment include the Al in 7 cyclesxGa1-xN/Al0.36Ga0.64N.Do not limited in the embodiment of the present invention
AlxGa1-xX span in N layers, optionally, inventor are obtained when x span is 0.51≤x≤0.57 by simulation
When, and the thickness of every Rotating fields is identical in superlattice structure, is 1nm, doping concentration is 5 × 1017cm-3, growth temperature is
1020 DEG C, so that the internal quantum efficiency and power output of ultraviolet LED epitaxial structure improve more obvious.
It should be noted that not limiting in the present invention undoped with cushion, N-type AlGaN layer, multi-quantum pit structure, electricity
The component of various materials in sub- barrier layer, p-type AlGaN layer and p-type GaN layer.In order to x span be 0.51≤x≤
When 0.57, the internal quantum efficiency and power output of ultraviolet LED epitaxial structure improve more obvious, optional in the present embodiment, not
Doping cushion is Al0.5Ga0.5N cushions, thickness is 1.5 μm, and growth temperature is 530 DEG C, and the Al0.5Ga0.5N cushions
Recrystallized within 6 minutes in 1050 DEG C of constant temperature.N-type AlGaN layer is N-type Al0.5Ga0.5N layers, thickness be 3.0 μm, doping concentration be 5 ×
1018cm-3, growth temperature is 1050 DEG C.Growth temperature in MQW is 1020 DEG C, wherein, every layer of Al0.36Ga0.64N thickness
For 8nm, every layer of Al0.5Ga0.5N thickness degree is 3nm.The structure of MQW includes 6 cycles of alternating growth in the present embodiment
Al0.36Ga0.64N/Al0.5Ga0.5N.In other embodiments, the cycle of multi-quantum pit structure can also be other numerical value, this reality
Apply in example and this is not limited.Electronic barrier layer is the thick p-type Al of 10nm0.65Ga0.35N layers, doping concentration is 2 × 1017cm-3,
Growth temperature is 990 DEG C.P-type AlGaN layer is the thick p-type Al of 10nm0.5Ga0.5N layers, doping concentration is 5 × 1017cm-3, growth
Temperature is 990 DEG C.P-type GaN layer, thickness is 100nm, and growth temperature is 990 DEG C, and doping concentration is 1 × 1018cm-3.In this hair
, can be different according to the material component of different structure sheafs in bright other embodiment, and different x values are set, it is ultraviolet to cause
The internal quantum efficiency and power output of LED epitaxial structure improve more obvious.
The specific material of substrate is not limited in the present embodiment, can be selected according to the actual requirements, it is necessary to illustrate,
Because sapphire has in higher translucency, the present embodiment optionally, the substrate is sapphire.What sapphire was often employed
Tangent plane has A faces, C faces, R faces.Lattice constant fitting percentage between sapphire C faces and iii-v and II-VI group deposition film
Small, while meeting GaN builds resistant to elevated temperatures requirement in brilliant processing procedure, therefore, optional in the present embodiment, the substrate is the indigo plant in C faces
Jewel substrate.
The ultraviolet LED epitaxial structure that the present invention is provided, increase sets super brilliant between MQW and electronic blocking ability layer
Lattice structure, the superlattice structure can effectively alleviate the strain between last quantum of active area base and electronic barrier layer,
Suppress electronics leakage, increase hole injection efficiency, so as to improve the optical output power and internal quantum efficiency of ultraviolet LED, it is presented
More preferably luminescent properties.In addition, being obviously reduced by reducing the strain beaten between last quantum base and electronic barrier layer
Polarized electric field in active area quantum well structure, and increase the Duplication of electronics and hole wave functions spatially, the amount of reducing
Son limitation Stark effect, so that the probability increase of radiation recombination occurs for active area electronics and hole, and then improves purple
The internal quantum efficiency and transmission power of outer LED epitaxial structure.
The preparation method for not limiting ultraviolet LED epitaxial structure for the deep ultraviolet LED structure of above-mentioned offer, the present invention, can
Choosing, can be using MOCVD (Metal-organic Chemical Vapor DePosition, metallo-organic compound chemistry
Vapor deposition) each Rotating fields of equipment making.Specifically, the embodiment of the present invention also provides a kind of making ultraviolet LED epitaxy junction
The preparation method of structure, including：
First, Sapphire Substrate is inserted into reative cell.
Then, in 1090 DEG C of logical high-purity hydrogen high temperature sintering substrates.
Then, at 530 DEG C lead to Ga sources, Al sources and nitrogen source growing low temperature undoped with Al0.5Ga0.5N cushions, undoped with
Al0.5Ga0.5The thickness of N cushions is about 1.5 μm.Then, 1050 DEG C and constant temperature 6 minutes or so are warming up to so that undoped with
Al0.5Ga0.5N cushions are recrystallized.
Then, Ga sources, Al sources, ammonia and silane SiH are passed through at 1050 DEG C4, growth N-type Al0.5Ga0.5N layers, it adulterates
Concentration is 5 × 1018cm-3, thickness is 3 μm.
Next, cooling to 1020 DEG C and being passed through Ga sources, Al sources, the Al of nitrogen source growth 8nm thickness0.36Ga0.64N quantum are built.Connect
, the thick Al of 3nm are grown at 1020 DEG C0.5Ga0.5N SQWs.First two steps step is repeated, 6 cycles of symbiosis length
Al0.36Ga0.64N/Al0.5Ga0.5N multi-quantum pit structures.
And then, 990 DEG C are cooled to, Al sources, Ga sources, ammonia and Mg sources is passed through, Al is grownxGa1-xN/Al0.36Ga0.64N surpasses
Lattice structure.AlxGa1-xN/Al0.36Ga0.64In N superlattice structures, its x span is 0.51≤x≤0.57.Superlattices
Structure is AlxGa1-xN/Al0.36Ga0.64In 7 cycles of both N alternating growths, every layer of AlGaN thickness is 1nm, and doping concentration is 5
×1017cm-3。
Then, at 990 DEG C, the thick p-type Al of one layer of 10nm are grown on superlattice structure0.65Ga0.35N electronic blockings
Layer, its doping concentration is 2 × 1017cm-3。
Then, at 990 DEG C, p-type Al thick one layer of 10nm of growth0.5Ga0.5N layers, doping concentration is 5 × 1017cm-3。
Finally, at 990 DEG C, p-type GaN layer thick one layer of 100nm of growth, doping concentration is 1 × 1018cm-3, and 700
DEG C annealing 20 minutes, obtain the p-type GaN layer of high hole concentration.
It should be noted that Ga sources, the concrete form in Al sources are not limited in the present embodiment, and optionally, institute in the present embodiment
Trimethyl gallium TMGa is in the Ga sources used, and Al sources are trimethyl aluminium TMAl, and nitrogen source is ammonia NH3, carrier gas is H2, N-type and p-type are mixed
Miscellaneous source is respectively silane SiH4With two luxuriant magnesium Cp2Mg。
AlGaN superlattice structures are employed by above-mentioned ultraviolet LED epitaxial structure, polarity effect can be reduced, weaken electronics resistance
Barrier EBL is to the band curvature between p-type AlGaN layer so that Red Shift Phenomena is improved, and shorter emission wavelength, hair is presented
Luminous intensity also increases therewith；Power output can be improved significantly, and power output increases with the amplification of electric current, is presented preferable
Power-performance；Reduce the complexity of electronics and hole-recombination, thus required energy decline so that open with smaller
Open voltage；Due to the design of new construction, it may be such that its voltage changes smaller to chip with the increase of electric current, shows more preferable two pole
Pipe performance；Furthermore, can more effectively realize that p-type is adulterated, strengthen electric conductivity, promote resistance to reduce, so as to reduce operating voltage, this has
Beneficial to the energy consumption for reducing UV LED chip, the energy is saved.
It should be noted that each embodiment in this specification is described by the way of progressive, each embodiment weight
Point explanation be all between difference with other embodiment, each embodiment identical similar part mutually referring to.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or using the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
Claims (12)
1. a kind of ultraviolet LED epitaxial structure, it is characterised in that including：
Substrate；
Grow successively over the substrate undoped with cushion, N-type AlGaN layer, multi-quantum pit structure, superlattice structure, electricity
Sub- barrier layer, p-type AlGaN layer and p-type GaN layer；
Wherein, the superlattice structure includes at least one layer of first AlGaN layer and at least one layer of second AlGaN layer, described first
AlGaN layer and described second is alternately superimposed.
2. ultraviolet LED epitaxial structure according to claim 1, it is characterised in that the multi-quantum pit structure includes alternating
The Al in 6 cycles of growth0.36Ga0.64N/Al0.5Ga0.5N。
3. ultraviolet LED epitaxial structure according to claim 2, it is characterised in that first AlGaN layer is AlxGa1-xN
Layer, second AlGaN layer is Al0.36Ga0.64N layers, and first AlGaN layer is grown in the MQW
Al0.5Ga0.5N layer surfaces.
4. ultraviolet LED epitaxial structure according to claim 3, it is characterised in that the span of the x is 0.51≤x
≤0.57。
5. ultraviolet LED epitaxial structure according to claim 4, it is characterised in that the superlattice structure includes 7 cycles
AlxGa1-xN/Al0.36Ga0.64N, every layer of AlxGa1-xN layers and every layer of Al0.36Ga0.64N layers of thickness is 1nm, doping concentration
For 5 × 1017cm-3, growth temperature is 1020 DEG C.
6. the ultraviolet LED epitaxial structure according to claim 1-5 any one, it is characterised in that the substrate is C faces
Sapphire Substrate.
7. the ultraviolet LED epitaxial structure according to claim 1-5 any one, it is characterised in that described undoped with buffering
Layer is Al0.5Ga0.5N cushions, thickness is 1.5 μm, and growth temperature is 530 DEG C, and the Al0.5Ga0.5N cushions are at 1050 DEG C
Constant temperature is recrystallized for 6 minutes.
8. the ultraviolet LED epitaxial structure according to claim 1-5 any one, it is characterised in that the N-type AlGaN layer
For N-type Al0.5Ga0.5N layers, thickness is 3.0 μm, and doping concentration is 5 × 1018cm-3, growth temperature is 1050 DEG C.
9. ultraviolet LED epitaxial structure according to claim 2, it is characterised in that the growth temperature in the MQW
For 1020 DEG C, wherein, every layer of Al0.36Ga0.64N thickness is 8nm, every layer of Al0.5Ga0.5N thickness degree is 3nm.
10. ultraviolet LED epitaxial structure according to claim 1, it is characterised in that the electronic barrier layer is 10nm thick
P-type Al0.65Ga0.35N layers, doping concentration is 2 × 1017cm-3, growth temperature is 990 DEG C.
11. ultraviolet LED epitaxial structure according to claim 1, it is characterised in that the p-type AlGaN layer is 10nm thick
P-type Al0.5Ga0.5N layers, doping concentration is 5 × 1017cm-3, growth temperature is 990 DEG C.
12. ultraviolet LED epitaxial structure according to claim 1, it is characterised in that the p-type GaN layer, thickness is
100nm, growth temperature is 990 DEG C, and doping concentration is 1 × 1018cm-3。
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| PCT/CN2017/111526 WO2019015186A1 (en) | 2017-07-21 | 2017-11-17 | Ultraviolet led epitaxial structure |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019015186A1 (en) * | 2017-07-21 | 2019-01-24 | 广东工业大学 | Ultraviolet led epitaxial structure |
| CN109920896A (en) * | 2019-01-23 | 2019-06-21 | 华灿光电（浙江）有限公司 | Gallium nitride based LED epitaxial slice and its manufacturing method |
| CN110112273A (en) * | 2019-05-10 | 2019-08-09 | 马鞍山杰生半导体有限公司 | A kind of deep ultraviolet LED epitaxial structure and preparation method thereof and deep ultraviolet LED |
| CN111403568A (en) * | 2020-03-25 | 2020-07-10 | 江西新正耀光学研究院有限公司 | Ultraviolet L ED epitaxial structure and preparation method thereof |
| CN111769182A (en) * | 2020-07-10 | 2020-10-13 | 中国科学院半导体研究所 | Surface plasmon GaN-based LED epitaxial structure and preparation method and application thereof |
| WO2022267446A1 (en) * | 2021-06-25 | 2022-12-29 | 至芯半导体(杭州)有限公司 | Alingan semiconductor light emitting device |
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| WO2019015186A1 (en) * | 2017-07-21 | 2019-01-24 | 广东工业大学 | Ultraviolet led epitaxial structure |
| CN109920896A (en) * | 2019-01-23 | 2019-06-21 | 华灿光电（浙江）有限公司 | Gallium nitride based LED epitaxial slice and its manufacturing method |
| CN109920896B (en) * | 2019-01-23 | 2021-04-06 | 华灿光电（浙江）有限公司 | Gallium nitride-based light emitting diode epitaxial wafer and manufacturing method thereof |
| CN110112273A (en) * | 2019-05-10 | 2019-08-09 | 马鞍山杰生半导体有限公司 | A kind of deep ultraviolet LED epitaxial structure and preparation method thereof and deep ultraviolet LED |
| CN110112273B (en) * | 2019-05-10 | 2020-06-30 | 马鞍山杰生半导体有限公司 | Deep ultraviolet LED epitaxial structure, preparation method thereof and deep ultraviolet LED |
| CN111403568A (en) * | 2020-03-25 | 2020-07-10 | 江西新正耀光学研究院有限公司 | Ultraviolet L ED epitaxial structure and preparation method thereof |
| CN111769182A (en) * | 2020-07-10 | 2020-10-13 | 中国科学院半导体研究所 | Surface plasmon GaN-based LED epitaxial structure and preparation method and application thereof |
| CN111769182B (en) * | 2020-07-10 | 2022-03-15 | 中国科学院半导体研究所 | Surface plasmon GaN-based LED epitaxial structure and preparation method and application thereof |
| WO2022267446A1 (en) * | 2021-06-25 | 2022-12-29 | 至芯半导体(杭州)有限公司 | Alingan semiconductor light emitting device |
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| CN107275450B (en) | 2019-08-30 |
| WO2019015186A1 (en) | 2019-01-24 |
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