WO2022267446A1 - Alingan semiconductor light emitting device - Google Patents

Alingan semiconductor light emitting device Download PDF

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WO2022267446A1
WO2022267446A1 PCT/CN2022/070606 CN2022070606W WO2022267446A1 WO 2022267446 A1 WO2022267446 A1 WO 2022267446A1 CN 2022070606 W CN2022070606 W CN 2022070606W WO 2022267446 A1 WO2022267446 A1 WO 2022267446A1
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layer
type
alingan
semiconductor
thickness
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PCT/CN2022/070606
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French (fr)
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黄小辉
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至芯半导体(杭州)有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Definitions

  • the invention relates to the technical field of semiconductor light emitting, in particular to an AlInGaN semiconductor light emitting device.
  • Semiconductor light-emitting devices are widely used in the preparation of visible light, violet light and ultraviolet light due to their excellent characteristics, and semiconductor light-emitting devices are gradually changing human life.
  • Semiconductor visible light devices give human beings light and save energy.
  • Semiconductor violet light and ultraviolet light like semiconductor visible light, are gradually entering people's field of vision.
  • Ultraviolet light in nature has a strong use value, such as the ultraviolet curing function of the UVA band, the ultraviolet medical function of the UVB band, and the ultraviolet sterilization function of the UVC band, etc.
  • Ultraviolet light-emitting diodes refer to light-emitting diodes with a wavelength between 100nm and 365nm, which have great application value in the fields of curing, sterilization, medical treatment, biochemical detection, and secure communication.
  • deep ultraviolet light-emitting diodes based on aluminum gallium nitride (AlInGaN) materials have the advantages of firmness, energy saving, long life, mercury-free environmental protection, etc., and are gradually penetrating into the traditional application fields of mercury lamps.
  • the ultraviolet light-emitting diode mainly uses AlInGaN as the growth material, and the required light-emitting structure is grown by the CVD epitaxial growth method.
  • the most basic structure includes AlInGaN buffer layer, AlInGaN non-doped layer, n-type AlInGaN layer, AlInGaN quantum well layer, AlInGaN electron blocking layer and P-type AlInGaN layer. As the wavelength becomes shorter, the Al composition of the AlInGaN quantum well layer becomes higher.
  • the activation energy of the P-type layer Mg also becomes higher and higher, resulting in a gradual decrease in the generation rate of P-type holes as the wavelength becomes shorter, so that the longer the wavelength Shorter electrons are less efficient at hole recombination.
  • the data shows that the activation energy of Mg in the P-type AlInGaN layer with Al composition from 0 to 100% rises from 150meV to 500meV, so that the hole concentration drops sharply.
  • the potential barrier of the P-type electron blocking layer is relatively high, the number of holes jumping into the quantum well to participate in electron-hole recombination is low, which is another reason for the low efficiency of electron-hole recombination in the quantum well.
  • the luminous efficiency of AlInGaN light-emitting diodes is low.
  • the luminous brightness of a 20mil ⁇ 20mil chip is about 10mW at a driving current of 100mA.
  • the low luminous efficiency leads to low sterilization efficiency, which greatly limits the use of ultraviolet light.
  • the present invention provides an AlInGaN semiconductor light emitting device.
  • An AlInGaN semiconductor light-emitting device comprising: a substrate, a semiconductor buffer layer, a first N-type semiconductor layer, a second N-type semiconductor layer, a multi-quantum well layer, a P-type hole transport layer, a P-type electron blocking layer, a P-type a semiconductor transport layer and a p-type semiconductor contact layer;
  • the semiconductor buffer layer is grown on the substrate; the first N-type semiconductor layer is grown on the semiconductor buffer layer; the second N-type semiconductor layer is grown on the first N-type semiconductor layer;
  • the multiple quantum well layer is grown on the second N-type semiconductor layer; the P-type hole transport layer is grown on the multiple quantum well layer; the P-type electron blocking layer is grown on the P-type hole On the hole transport layer; the P-type semiconductor transport layer and the P-type semiconductor contact layer are grown on the P-type electron blocking layer;
  • the P-type hole transport layer is a single-layer AlInGaN material layer or an AlInGaN/AlInGaN superlattice structure layer.
  • the substrate is sapphire, Si, SiC, AlN, quartz glass or GaN.
  • the material of the semiconductor buffer layer is Al x1 In y1 Ga 1-x1-y1 N, where 0 ⁇ x1 ⁇ 1, 0 ⁇ y1 ⁇ 1; the thickness of the semiconductor buffer layer is 200nm ⁇ 5000nm.
  • the material of the first N-type semiconductor layer is Al x2 In y2 Ga 1-x2-y2 N, wherein, 0 ⁇ x2 ⁇ 1, 0 ⁇ y2 ⁇ 1, x1>x2;
  • the thickness of the first N-type semiconductor layer is 200nm-5000nm;
  • the N-type doping concentration of the first N-type semiconductor layer is 1 ⁇ 10 17 cm -3 to 1 ⁇ 10 19 cm -3 .
  • the material of the second N-type semiconductor layer is Al x3 In y3 Ga 1-x3-y3 N, wherein, 0 ⁇ x3 ⁇ 1, 0 ⁇ y3 ⁇ 1, x2>x3;
  • the thickness of the second N-type semiconductor layer is 500nm-5000nm;
  • the N-type doping concentration of the second N-type semiconductor layer is 1 ⁇ 10 18 cm -3 to 1 ⁇ 10 20 cm -3 .
  • the multiple quantum well layer is a structural layer with Al x4 In y4 Ga 1-x4-y4 N as quantum barriers and Al x5 In y5 Ga 1-x5-y5 N as quantum wells, where 0 ⁇ x4 ⁇ 1, 0 ⁇ y4 ⁇ 1, 0 ⁇ x5 ⁇ 1, 0 ⁇ y5 ⁇ 1, x4>x5;
  • the thickness of the quantum barrier is 1 nm to 50 nm;
  • the thickness of the quantum well is 1nm-50nm; the number of the quantum well is greater than 1.
  • the material of the P-type hole transport layer is Al x6 In y6 Ga 1-x6-y6 N, where 0 ⁇ x6 ⁇ 1. 0 ⁇ y6 ⁇ 1, x4>x6>x5;
  • the thickness of the P-type hole transport layer is 0.5 nm to 50 nm;
  • the P-type doping concentration in the P-type hole transport layer is 1 ⁇ 10 18 cm -3 -1 ⁇ 10 20 cm -3 .
  • the material of the P-type hole transport layer is Al x7 In y7 Ga 1-x7-y7 N/Al x8 In y8 Ga 1-x8-y8 N, among them, the thickness of Al x7 In y7 Ga 1-x7-y7 N and Al x8 In y8 Ga 1-x8-y8 N is greater than 0.5nm, and the period number of superlattice is greater than or equal to 1 , 0 ⁇ x7 ⁇ 1, 0 ⁇ y7 ⁇ 1, 0 ⁇ x8 ⁇ 1, 0 ⁇ y8 ⁇ 1, x4>x8>x7>x5;
  • the P-type doping concentration in the P-type hole transport layer is 1 ⁇ 10 18 cm -3 -1 ⁇ 10 20 cm -3 .
  • the material of the P-type electron blocking layer is Mg-doped Al x9 In y9 Ga 1-x9- y9 N, wherein, 0 ⁇ x9 ⁇ 1, 0 ⁇ y9 ⁇ 1, x9>x4;
  • the thickness of the P-type electron blocking layer is 2 nm to 100 nm;
  • the P-type doping concentration of the P-type electron blocking layer is 1 ⁇ 10 18 cm -3 to 1 ⁇ 10 20 cm -3 .
  • the material of the P-type semiconductor transport layer is Al x0 In y0 Ga 1-x0-y0 N, where 0 ⁇ x0 ⁇ 1, 0 ⁇ y0 ⁇ 1, and x0>x5;
  • the thickness of the P-type semiconductor transport layer is 5 nm to 1000 nm; the P-type doping concentration of the P-type semiconductor transport layer is 1 ⁇ 10 18 cm -3 to 1 ⁇ 10 20 cm -3 ;
  • the P-type semiconductor contact layer is a P-type highly doped layer
  • the P-type doping concentration of the P-type semiconductor contact layer is 1 ⁇ 10 19 cm -3 to 1 ⁇ 10 21 cm -3 ;
  • the thickness of the P-type semiconductor contact layer is 1nm-20nm.
  • the P-type hole transport layer as a single-layer AlInGaN material layer or an AlInGaN/AlInGaN superlattice structure layer, the generation rate of holes near the quantum well can be improved, and the holes can be continuously supplied to the quantum well.
  • a large number of holes are provided in the quantum wells to improve the electron-hole recombination efficiency in the AlInGaN quantum wells, improve the performance of AlInGaN light-emitting diodes, and then achieve the following advantages:
  • the luminous performance of AlInGaN semiconductor light-emitting devices is obviously improved, especially the luminous performance of purple and ultraviolet light-emitting devices.
  • FIG. 1 is a schematic structural view of an AlInGaN semiconductor light emitting device provided by the present invention
  • FIG. 2 is a schematic structural view of an AlInGaN semiconductor light-emitting device when the P-type hole transport layer is a single-layer AlInGaN material layer;
  • FIG. 3 is a schematic structural view of an AlInGaN semiconductor light-emitting device when the P-type hole transport layer is an AlInGaN/AlInGaN superlattice structure layer;
  • Fig. 4 is a flowchart of a method for manufacturing an AlInGaN semiconductor light emitting device provided by the present invention.
  • the object of the present invention is to provide an AlInGaN semiconductor light-emitting device, so as to improve the electron-hole recombination efficiency in the AlInGaN quantum well, and further improve the performance of the AlInGaN light-emitting diode.
  • the AlInGaN semiconductor light-emitting device includes: a substrate 1, a semiconductor buffer layer 2, a first N-type semiconductor layer 3, a second N-type semiconductor layer 4, a multi-quantum well layer 5, a P-type A hole transport layer 6 , a P-type electron blocking layer 7 , a P-type semiconductor transport layer 8 and a P-type semiconductor contact layer 9 .
  • the semiconductor buffer layer 2 is grown on the substrate 1 .
  • the first N-type semiconductor layer 3 is grown on the semiconductor buffer layer 2 .
  • the second N-type semiconductor layer 4 is grown on the first N-type semiconductor layer 3 .
  • the multiple quantum well layer 5 is grown on the second N-type semiconductor layer 4 .
  • P-type hole transport layer 6 is grown on multiple quantum well layer 5 .
  • P-type electron blocking layer 7 is grown on P-type hole transport layer 6 .
  • the P-type semiconductor transport layer 8 and the P-type semiconductor contact layer 9 are grown on the P-type electron blocking layer 7 .
  • the P-type hole transport layer 6 is a single-layer AlInGaN material layer or an AlInGaN/AlInGaN superlattice structure layer.
  • the specific structure of the AlInGaN semiconductor light emitting device when the P-type hole transport layer 6 is a single layer of AlInGaN material is shown in FIG. 2 .
  • the specific structure of the AlInGaN semiconductor light emitting device when the P-type hole transport layer 6 is an AlInGaN/AlInGaN superlattice structure layer is shown in FIG. 3 .
  • the substrate 1 used is preferably sapphire, Si, SiC, AlN, quartz glass or GaN.
  • the material of the semiconductor buffer layer 2 is preferably Al x1 In y1 Ga 1-x1-y1 N, where 0 ⁇ x1 ⁇ 1, 0 ⁇ y1 ⁇ 1.
  • the thickness of the semiconductor buffer layer 2 is 200nm-5000nm.
  • the material of the first N-type semiconductor layer 3 is preferably Al x2 In y2 Ga 1-x2-y2 N, where 0 ⁇ x2 ⁇ 1, 0 ⁇ y2 ⁇ 1, and x1>x2.
  • the thickness of the first N-type semiconductor layer 3 is preferably 200 nm to 5000 nm.
  • the N-type doping concentration of the first N-type semiconductor layer 3 is preferably 1 ⁇ 10 17 cm ⁇ 3 to 1 ⁇ 10 19 cm ⁇ 3 .
  • the material of the second N-type semiconductor layer 4 is preferably Al x3 In y3 Ga 1-x3-y3 N, where 0 ⁇ x3 ⁇ 1, 0 ⁇ y3 ⁇ 1, and x2>x3.
  • the thickness of the second N-type semiconductor layer 4 is preferably 500 nm to 5000 nm.
  • the N-type doping concentration of the second N-type semiconductor layer 4 is 1 ⁇ 10 18 cm ⁇ 3 to 1 ⁇ 10 20 cm ⁇ 3 .
  • the multi-quantum well layer 5 is preferably a structural layer with Al x4 In y4 Ga 1-x4-y4 N as the quantum barrier and Al x5 In y5 Ga 1-x5-y5 N as the quantum well, wherein 0 ⁇ x4 ⁇ 1, 0 ⁇ y4 ⁇ 1, 0 ⁇ x5 ⁇ 1, 0 ⁇ y5 ⁇ 1, x4>x5.
  • the thickness of the quantum barrier is preferably 1 nm to 50 nm.
  • the thickness of the quantum well is preferably 1 nm to 50 nm.
  • the number of quantum wells is preferably greater than one.
  • the material of the P-type hole transport layer 6 is preferably Al x6 In y6 Ga 1-x6-y6 N, where 0 ⁇ x6 ⁇ 1, 0 ⁇ y6 ⁇ 1, x4>x6>x5.
  • the thickness of the P-type hole transport layer 6 is preferably 0.5 nm to 50 nm.
  • the P-type doping concentration in the P-type hole transport layer 6 is preferably 1 ⁇ 10 18 cm ⁇ 3 to 1 ⁇ 10 20 cm ⁇ 3 .
  • the material of the P-type hole transport layer 6 is preferably Al x7 In y7 Ga 1-x7-y7 N/Al x8 In y8 Ga 1-x8 -y8 N, wherein, the thickness of Al x7 In y7 Ga 1-x7-y7 N and Al x8 In y8 Ga 1-x8-y8 N is greater than 0.5nm, the period number of superlattice is greater than or equal to 1, 0 ⁇ x7 ⁇ 1, 0 ⁇ y7 ⁇ 1, 0 ⁇ x8 ⁇ 1, 0 ⁇ y8 ⁇ 1, x4>x8>x7>x5.
  • the P-type doping concentration in the P-type hole transport layer 6 is preferably 1 ⁇ 10 18 cm ⁇ 3 to 1 ⁇ 10 20 cm ⁇ 3 .
  • the material of the P-type electron blocking layer 7 is preferably Mg-doped Al x9 In y9 Ga 1-x9- y9 N, where 0 ⁇ x9 ⁇ 1, 0 ⁇ y9 ⁇ 1, and x9>x4.
  • the thickness of the P-type electron blocking layer 7 is preferably 2 nm to 100 nm.
  • the P-type doping concentration of the P-type electron blocking layer 7 is preferably 1 ⁇ 10 18 cm ⁇ 3 to 1 ⁇ 10 20 cm ⁇ 3 .
  • the material of the P-type semiconductor transport layer 8 is preferably Al x0 In y0 Ga 1-x0-y0 N, where 0 ⁇ x0 ⁇ 1, 0 ⁇ y0 ⁇ 1, and x0>x5.
  • the thickness of the P-type semiconductor transport layer 8 is preferably 5 nm to 1000 nm.
  • the P-type doping concentration of the P-type semiconductor transport layer 8 is preferably 1 ⁇ 10 18 cm ⁇ 3 to 1 ⁇ 10 20 cm ⁇ 3 .
  • the P-type semiconductor contact layer 9 is preferably a P-type highly doped layer.
  • the P-type doping concentration of the P-type semiconductor contact layer 9 is preferably 1 ⁇ 10 19 cm ⁇ 3 to 1 ⁇ 10 21 cm ⁇ 3 .
  • the thickness of the P-type semiconductor contact layer 9 is preferably 1 nm to 20 nm.
  • a method for manufacturing the above-mentioned AlInGaN semiconductor light-emitting device is provided below to illustrate the specific structure of the above-mentioned AlInGaN semiconductor light-emitting device.
  • the preparation method of the AlInGaN semiconductor light emitting device includes:
  • Step 101 growing a semiconductor buffer layer 2 on the substrate 1 .
  • Step 102 growing a first N-type semiconductor layer 3 on the semiconductor buffer layer 2 .
  • Step 103 growing a second N-type semiconductor layer 4 on the first N-type semiconductor layer 3 .
  • Step 104 growing a multiple quantum well layer 5 on the second N-type semiconductor layer 4 .
  • Step 105 growing a P-type hole transport layer 6 on the multi-quantum well layer 5 .
  • Step 106 growing a P-type electron blocking layer 7 on the P-type hole transport layer 6 .
  • Step 107 growing a P-type semiconductor transport layer 8 and a P-type semiconductor contact layer 9 on the P-type electron blocking layer 7 .
  • the preparation method provided above also includes:
  • the substrate 1 is placed in a high-temperature MOCVD device, fed with hydrogen gas, and baked at a high temperature of 1100° C. to clean oxides and impurities on the surface of the substrate 1 .
  • the material, thickness, and whether impurities are added to each layer are set according to the required functions.
  • the sapphire pattern substrate into the high-temperature MOCVD equipment, pass through hydrogen gas, and bake at a high temperature of 1100°C to clean the oxides and impurities on the surface of the substrate.
  • a non-doped AlN layer is grown at high temperature, and the thickness of the AlN layer is controlled at 3 ⁇ m.
  • a first N-type Al 0.6 Ga 0.4 N layer is grown on the non-doped AlN layer.
  • the N-type Al 0.6 Ga 0.4 N layer has a thickness of 1 ⁇ m and a doping concentration of 1 ⁇ 10 18 cm ⁇ 3 .
  • a first N-type Al 0.5 Ga 0.4 N layer is grown on the non-doped AlN layer.
  • the N-type Al 0.5 Ga 0.4 N layer has a thickness of 1 ⁇ m and a doping concentration of 1 ⁇ 10 19 cm ⁇ 3 .
  • the period thickness is 14nm (wherein the well width is 2nm, the barrier width is 12nm), the period number for 8.
  • a 4nm-thick Al 0.35 In 0.01 Ga 0.64 N hole transport layer was grown on the grown multiple quantum well structure, and its P-type Mg doped layer was grown with a doping concentration of 1 ⁇ 10 19 cm -3 .
  • a 40nm-thick P-type Al 0.60 In 0.01 Ga 0.39 N electron blocking layer is grown with a doping concentration of 1 ⁇ 10 19 cm -3 .
  • the thickness of the P-type transport layer is 15nm, and the doping concentration is 1 ⁇ 10 19 cm -3 .
  • a P-type Al 0.15 Ga 0.75 N contact layer with a high doping concentration is grown, the thickness of the P-type contact layer is 5 nm, and the doping concentration is 1 ⁇ 10 20 cm -3 .
  • the surface of the grown epitaxial wafer is cleaned, and a chip is made, and the size of the chip is 500 ⁇ m ⁇ 500 ⁇ m.
  • the edge N electrode is etched, the width of the edge N electrode is 20 ⁇ m, and the etching depth is 500 nm.
  • Ti/Au is evaporated on the N electrode with a thickness of 100nm/100nm respectively to form a good ohmic contact.
  • Al metal is vapor-deposited as the ultraviolet light reflection layer with a thickness of 500nm, which can completely reflect the ultraviolet light emitted by the quantum well.
  • this chip When this chip is made into a flip-chip size of 500 ⁇ m ⁇ 500 ⁇ m, a current of 100mA is passed through, the wavelength is 275nm, and the brightness is 30mW.
  • the sapphire pattern substrate is placed in a high-temperature MOCVD device, fed with hydrogen, and baked at a high temperature of 1100°C to clean the oxides and impurities on the surface of the substrate.
  • a non-doped Al 0.99 Ga 0.01 N buffer layer is grown at high temperature, and the thickness of the Al 0.99 Ga 0.01 N layer is controlled at 4 ⁇ m.
  • this N-type Al 0.8 Ga 0.2 N layer is 1.5 ⁇ m, and the doping concentration is 2 ⁇ 10 18 cm -3 .
  • a second N-type Al 0.6 Ga 0.4 N layer is grown on the basis of the first N-type Al 0.8 Ga 0.2 N layer, the thickness of this layer is 1.5 ⁇ m, and the doping concentration is 1 ⁇ 10 19 cm -3 .
  • Adjust the temperature to the temperature of growing quantum wells grow the structure of Al 0.35 In 0.01 Ga 0.64 N/Al 0.5 In 0.01 Ga 0.49 N multiple quantum wells, the periodic thickness is 12.5nm (wherein the well width is 1.5nm, the barrier width is 11nm), Its cycle number is 4.
  • a 2nm-thick Al 0.4 In 0.01 Ga 0.59 N hole transport layer was grown on the grown multiple quantum well structure, and its P-type Mg-doped layer was grown with a doping concentration of 5 ⁇ 10 19 cm -3 .
  • a 50nm-thick Al 0.65 In 0.01 Ga 0.34 N electron blocking layer is grown on the basis of the hole transport layer.
  • the thickness of the P-type contact layer is 20nm, and the doping concentration is 1 ⁇ 10 20 cm -3 , and the P-type contact layer is no longer used.
  • the surface of the grown epitaxial wafer is cleaned, and a chip is made, and the size of the chip is 500 ⁇ m ⁇ 500 ⁇ m.
  • the edge N electrode is etched, the width of the edge N electrode is 30 ⁇ m, and the etching depth is 400 nm.
  • the electrodes in the central area are 4 strips, the width of the strips is 40 ⁇ m, the length is 300 ⁇ m, and the etching depth is 400 nm.
  • Ti/Au is evaporated on the N electrode with a thickness of 100nm/200nm respectively to form a good ohmic contact.
  • vapor-deposit Ni/Au alloy as P-type electrode with a thickness of 1nm/10nm respectively to form a good P-type ohmic contact, and continue to vapor-deposit Rh metal 200nm to form a good P-type region for ultraviolet light reflection.
  • This chip is made into a flip chip, and when the chip size is 500 ⁇ m ⁇ 500 ⁇ m, a current of 100 mA is passed through, the wavelength is 265 nm, and the brightness is 30 mW.
  • the AlN substrate is placed in a high-temperature MOCVD device, fed with hydrogen, and baked at a high temperature of 1100 ° C to clean the oxides and impurities on the surface of the substrate.
  • a non-doped Al 0.99 Ga 0.01 N buffer layer is grown at high temperature, and the thickness of the Al 0.99 Ga 0.01 N layer is controlled at 2 ⁇ m.
  • the N-type Al 0.65 Ga 0.35 N layer has a thickness of 1.5 ⁇ m and a doping concentration of 1 ⁇ 10 18 cm -3 .
  • a second N-type Al 0.5 Ga 0.5 N layer is grown on the basis of the first N-type Al 0.65 Ga 0.35 N layer, the thickness of this layer is 1.0 ⁇ m, and the doping concentration is 1 ⁇ 10 19 cm -3 .
  • the periodic thickness is 15nm (wherein the well width is 3nm, the barrier width is 12nm), the period The number is 6.
  • a 2nm-thick Al 0.2 In 0.01 Ga 0.79 N hole transport layer was grown on the grown multiple quantum well structure, and its P-type Mg-doped layer was grown with a doping concentration of 2 ⁇ 10 19 cm -3 .
  • a 30nm-thick Al 0.55 In 0.01 Ga 0.44 N electron blocking layer is grown on the basis of the hole transport layer.
  • the thickness of the P-type contact layer is 30nm, and the doping concentration is 1 ⁇ 10 20 cm -3 .
  • the P-type contact layer is made of Al 0.10 In 0.01 Ga 0.89 N with a thickness of 5nm and a doping concentration of 1 ⁇ 10 20 cm -3 .
  • the surface of the grown epitaxial wafer is cleaned, and a chip is made, and the size of the chip is 500 ⁇ m ⁇ 500 ⁇ m.
  • Ti/Au is evaporated on the N electrode with a thickness of 100nm/200nm respectively to form a good ohmic contact.
  • vapor-deposit Ni/Au alloy as P-type electrode with a thickness of 1nm/10nm respectively to form a good P-type ohmic contact, and continue to vapor-deposit Al metal for 400nm to form a good ultraviolet light reflection in the P-type region.
  • This chip is made into a flip chip, and when the chip size is 500 ⁇ m ⁇ 500 ⁇ m, a current of 100 mA is passed through, the wavelength is 305 nm, and the brightness is 30 mW.
  • the sapphire pattern substrate is placed in a high-temperature MOCVD device, fed with hydrogen, and baked at a high temperature of 1100°C to clean the oxides and impurities on the surface of the substrate.
  • a non-doped Al 0.99 Ga 0.01 N buffer layer is grown at high temperature, and the thickness of the Al 0.99 Ga 0.01 N layer is controlled at 4 ⁇ m.
  • the N-type Al 0.8 Ga 0.2 N layer has a thickness of 1.5 ⁇ m and a doping concentration of 2 ⁇ 10 18 cm -3 .
  • a second N-type Al 0.6 Ga 0.4 N layer is grown on the basis of the first N-type Al 0.8 Ga 0.2 N layer, the thickness of this layer is 1.5 ⁇ m, and the doping concentration is 1 ⁇ 10 19 cm -3 .
  • Adjust the temperature to the temperature of growing quantum wells grow the structure of Al 0.35 In 0.01 Ga 0.64 N/Al 0.5 In 0.01 Ga 0.49 N multiple quantum wells, the periodic thickness is 12.5nm (wherein the well width is 1.5nm, the barrier width is 11nm), Its cycle number is 4.
  • a layer of 0.5nm/0.5nm thick Al 0.38 In 0.01 Ga 0.61 N/Al 0.48 In 0.01 Ga 0.51 N hole transport layer was grown on the grown multiple quantum well structure with a period number of 5, and its P-type doped Mg, the doping concentration is 1 ⁇ 10 19 cm -3 .
  • a 50nm-thick Al 0.65 In 0.01 Ga 0.34 N electron blocking layer is grown on the basis of the hole transport layer.
  • the thickness of the P-type contact layer is 20nm, and the doping concentration is 1 ⁇ 10 20 cm -3 , and the P-type contact layer is no longer used.
  • the surface of the grown epitaxial wafer is cleaned, and a chip is made, and the size of the chip is 500 ⁇ m ⁇ 500 ⁇ m.
  • the edge N electrode is etched, the width of the edge N electrode is 30 ⁇ m, and the etching depth is 400 nm.
  • the electrodes in the central area are in the shape of 4 strips, the width of the strips is 40 ⁇ m, the length is 300 ⁇ m, and the etching depth is 400 nm.
  • Ti/Au is evaporated on the N electrode with a thickness of 100nm/200nm respectively to form a good ohmic contact.
  • vapor-deposit Ni/Au alloy as P-type electrode with a thickness of 1nm/10nm respectively to form a good P-type ohmic contact, and continue to vapor-deposit Rh metal 200nm to form a good P-type region for ultraviolet light reflection.
  • This chip is made into a flip chip, and when the chip size is 500 ⁇ m ⁇ 500 ⁇ m, a current of 100 mA is passed through, the wavelength is 265 nm, and the brightness is 30 mW.
  • the AlN substrate is placed in a high-temperature MOCVD device, fed with hydrogen, and baked at a high temperature of 1100 ° C to clean the oxides and impurities on the surface of the substrate.
  • a non-doped Al 0.99 Ga 0.01 N buffer layer is grown at high temperature, and the thickness of the Al 0.99 Ga 0.01 N layer is controlled at 2 ⁇ m.
  • the N-type Al 0.65 Ga 0.35 N layer has a thickness of 1.5 ⁇ m and a doping concentration of 1 ⁇ 10 18 cm -3 .
  • a second N-type Al 0.5 Ga 0.5 N layer is grown on the basis of the first N-type Al 0.65 Ga 0.35 N layer, the thickness of this layer is 1.0 ⁇ m, and the doping concentration is 1 ⁇ 10 19 cm -3 .
  • the periodic thickness is 15nm (wherein the well width is 3nm, the barrier width is 12nm), the period The number is 6.
  • a layer of 1nm/1nm thick Al 0.25 In 0.01 Ga 0.74 N/Al 0.35 In 0.01 Ga 0.64 N hole transport layer is grown on the grown multi-quantum well structure, the number of periods is 3, and its P-type Mg doped, The doping concentration is 1 ⁇ 10 19 cm -3 .
  • a 30nm-thick Al 0.55 In 0.01 Ga 0.44 N electron blocking layer is grown on the basis of the hole transport layer.
  • the thickness of the P-type contact layer is 30nm, and the doping concentration is 1 ⁇ 10 20 cm -3 .
  • the P-type contact layer is made of Al 0.10 In 0.01 Ga 0.89 N with a thickness of 5nm and a doping concentration of 1 ⁇ 10 20 cm -3 .
  • the surface of the grown epitaxial wafer is cleaned, and a chip is made, and the size of the chip is 500 ⁇ m ⁇ 500 ⁇ m.
  • Ti/Au is evaporated on the N electrode with a thickness of 100nm/200nm respectively to form a good ohmic contact.
  • vapor-deposit Ni/Au alloy as P-type electrode with a thickness of 1nm/10nm respectively to form a good P-type ohmic contact, and continue to vapor-deposit Al metal 400nm to form a good P-type region for ultraviolet light reflection.
  • This chip is made into a flip chip, and when the chip size is 500 ⁇ m ⁇ 500 ⁇ m, a current of 100 mA is passed through, the wavelength is 305 nm, and the brightness is 30 mW.

Abstract

The present invention relates to an AlInGaN semiconductor light emitting device. The AlInGaN semiconductor light emitting device comprises: a substrate, a semiconductor buffer layer, a first N-type semiconductor layer, a second N-type semiconductor layer, a multi-quantum well layer, a P-type hole transport layer, a P-type electron blocking layer, a P-type semiconductor transport layer, and a P-type semiconductor contact layer. In the AlInGaN semiconductor light emitting device provided in the present invention, by means of the arrangement of the P-type hole transport layer as a single-layer AlInGaN material layer or an AlInGaN/AlInGaN superlattice structure layer, the production rate of holes near the quantum wells can be increased, so that a large amount of holes are continuously provided to the quantum wells in order to improve the electron-hole recombination efficiency in the AlInGaN quantum wells, enhancing the performance of the AlInGaN light emitting diode.

Description

一种AlInGaN半导体发光器件A kind of AlInGaN semiconductor light emitting device
本申请要求于2021年06月25日提交中国专利局、申请号为202110707146.X、发明名称为“一种AlInGaN半导体发光器件”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。This application claims the priority of the Chinese patent application with the application number 202110707146.X and the invention title "An AlInGaN Semiconductor Light-Emitting Device" submitted to the China Patent Office on June 25, 2021, the entire contents of which are incorporated by reference in this application middle.
技术领域technical field
本发明涉及半导体发光技术领域，特别是涉及一种AlInGaN半导体发光器件。The invention relates to the technical field of semiconductor light emitting, in particular to an AlInGaN semiconductor light emitting device.
背景技术Background technique
半导体发光器件因其优异的特性被广泛应用于制备可见光、紫光和紫外光，而半导体发光器件也正在逐步改变人类的生活。半导体可见光器件给了人类光明，节约了能源。半导体紫光和紫外光与半导体可见光一样，正在逐步进入人们的视野。自然界的紫外光有很强的使用价值，比如说UVA波段的紫外固化功能、UVB波段的紫外医疗功能、UVC波段的紫外杀菌功能等。然而自然界的紫外光比较难收集利用，并且因为大气层的吸收，地球上UVC波段几乎不存在。所以，为了更好地利用紫外光的价值，紫外发光二极管的研发和生产最近成了半导体领域的热门。Semiconductor light-emitting devices are widely used in the preparation of visible light, violet light and ultraviolet light due to their excellent characteristics, and semiconductor light-emitting devices are gradually changing human life. Semiconductor visible light devices give human beings light and save energy. Semiconductor violet light and ultraviolet light, like semiconductor visible light, are gradually entering people's field of vision. Ultraviolet light in nature has a strong use value, such as the ultraviolet curing function of the UVA band, the ultraviolet medical function of the UVB band, and the ultraviolet sterilization function of the UVC band, etc. However, it is difficult to collect and utilize ultraviolet light in nature, and because of the absorption of the atmosphere, the UVC band hardly exists on the earth. Therefore, in order to make better use of the value of ultraviolet light, the development and production of ultraviolet light-emitting diodes has recently become a hot spot in the semiconductor field.
紫外发光二极管是指波长100nm到365nm之间的发光二极管，在固化、杀菌消毒、医疗、生化检测和保密通讯等领域有重大应用价值。与汞灯紫外光源相比，基于氮化铝镓(AlInGaN)材料的深紫外发光二极管具备坚固、节能、寿命长、无汞环保等优点，正逐步渗入汞灯的传统应用领域。同时，深紫外发光二极管的独特优势又激发了许多新的消费类电子产品应用，如白色家电的消毒模块、便携式水净化系统、手机消毒器等，从而展现出广阔的市场前景，成为又一全球研究热点。Ultraviolet light-emitting diodes refer to light-emitting diodes with a wavelength between 100nm and 365nm, which have great application value in the fields of curing, sterilization, medical treatment, biochemical detection, and secure communication. Compared with mercury lamp ultraviolet light sources, deep ultraviolet light-emitting diodes based on aluminum gallium nitride (AlInGaN) materials have the advantages of firmness, energy saving, long life, mercury-free environmental protection, etc., and are gradually penetrating into the traditional application fields of mercury lamps. At the same time, the unique advantages of deep ultraviolet light-emitting diodes have inspired many new consumer electronics applications, such as disinfection modules for white goods, portable water purification systems, mobile phone sterilizers, etc., thus showing broad market prospects and becoming another global market. Research hotspots.
目前紫外发光二极管主要采用AlInGaN作为生长材料，利用CVD外延生长方法生长出所需要的发光结构。最基本的结构包含AlInGaN缓冲层、AlInGaN非掺层、n型AlInGaN层、AlInGaN量子阱层、AlInGaN电子阻挡层以及P型AlInGaN层。随着波长变短，AlInGaN量子阱层的Al组分越高。 但是随着AlInGaN量子阱层Al组分的逐渐变高，P型层Mg的激活能也越来越高，导致P型空穴的产生率随着波长变短而逐渐变低，以至于波长越短电子的空穴复合效率越低。数据表明Al组分从0到100％的P型AlInGaN层Mg的激活能从150meV上升到500meV，从而空穴浓度急剧下降。再者，因为P型电子阻挡层的势垒较高，导致空穴跃迁进入量子阱参与电子空穴复合的数量较低，也是导致量子阱中电子空穴复合效率低的另外一个原因。At present, the ultraviolet light-emitting diode mainly uses AlInGaN as the growth material, and the required light-emitting structure is grown by the CVD epitaxial growth method. The most basic structure includes AlInGaN buffer layer, AlInGaN non-doped layer, n-type AlInGaN layer, AlInGaN quantum well layer, AlInGaN electron blocking layer and P-type AlInGaN layer. As the wavelength becomes shorter, the Al composition of the AlInGaN quantum well layer becomes higher. However, as the Al composition of the AlInGaN quantum well layer gradually increases, the activation energy of the P-type layer Mg also becomes higher and higher, resulting in a gradual decrease in the generation rate of P-type holes as the wavelength becomes shorter, so that the longer the wavelength Shorter electrons are less efficient at hole recombination. The data shows that the activation energy of Mg in the P-type AlInGaN layer with Al composition from 0 to 100% rises from 150meV to 500meV, so that the hole concentration drops sharply. Furthermore, because the potential barrier of the P-type electron blocking layer is relatively high, the number of holes jumping into the quantum well to participate in electron-hole recombination is low, which is another reason for the low efficiency of electron-hole recombination in the quantum well.
目前AlInGaN发光二极管的发光效率较低，20mil×20mil的芯片在100mA驱动电流下发光亮度约10mW，发光效率低导致杀菌效率也偏低，极大地限制了紫外光的使用场景。At present, the luminous efficiency of AlInGaN light-emitting diodes is low. The luminous brightness of a 20mil×20mil chip is about 10mW at a driving current of 100mA. The low luminous efficiency leads to low sterilization efficiency, which greatly limits the use of ultraviolet light.
发明内容Contents of the invention
为解决现有技术中存在的上述问题，本发明提供了一种AlInGaN半导体发光器件。In order to solve the above problems in the prior art, the present invention provides an AlInGaN semiconductor light emitting device.
本发明的技术方案如下：Technical scheme of the present invention is as follows:
一种AlInGaN半导体发光器件，包括：衬底、半导体缓冲层、第一N型半导体层、第二N型半导体层、多量子阱层、P型空穴输送层、P型电子阻挡层、P型半导体传输层和P型半导体接触层；An AlInGaN semiconductor light-emitting device, comprising: a substrate, a semiconductor buffer layer, a first N-type semiconductor layer, a second N-type semiconductor layer, a multi-quantum well layer, a P-type hole transport layer, a P-type electron blocking layer, a P-type a semiconductor transport layer and a p-type semiconductor contact layer;
所述半导体缓冲层生长在所述衬底上；所述第一N型半导体层生长在所述半导体缓冲层上；所述第二N型半导体层生长在所述第一N型半导体层上；所述多量子阱层生长在所述第二N型半导体层上；所述P型空穴输送层生长在所述多量子阱层上；所述P型电子阻挡层生长在所述P型空穴输送层上；P型半导体传输层和所述P型半导体接触层生长在所述P型电子阻挡层上；The semiconductor buffer layer is grown on the substrate; the first N-type semiconductor layer is grown on the semiconductor buffer layer; the second N-type semiconductor layer is grown on the first N-type semiconductor layer; The multiple quantum well layer is grown on the second N-type semiconductor layer; the P-type hole transport layer is grown on the multiple quantum well layer; the P-type electron blocking layer is grown on the P-type hole On the hole transport layer; the P-type semiconductor transport layer and the P-type semiconductor contact layer are grown on the P-type electron blocking layer;
所述P型空穴输送层为单层AlInGaN材料层或AlInGaN/AlInGaN超晶格结构层。The P-type hole transport layer is a single-layer AlInGaN material layer or an AlInGaN/AlInGaN superlattice structure layer.
可选地，所述衬底为蓝宝石、Si、SiC、AlN、石英玻璃或GaN。Optionally, the substrate is sapphire, Si, SiC, AlN, quartz glass or GaN.
可选地，所述半导体缓冲层的材质为Al x1In y1Ga 1-x1-y1N，其中，0≤x1≤1，0≤y1≤1；所述半导体缓冲层的厚度为200nm～5000nm。 Optionally, the material of the semiconductor buffer layer is Al x1 In y1 Ga 1-x1-y1 N, where 0≤x1≤1, 0≤y1≤1; the thickness of the semiconductor buffer layer is 200nm˜5000nm.
可选地，所述第一N型半导体层的材质为Al x2In y2Ga 1-x2-y2N，其中， 0≤x2≤1，0≤y2≤1，x1>x2； Optionally, the material of the first N-type semiconductor layer is Al x2 In y2 Ga 1-x2-y2 N, wherein, 0≤x2≤1, 0≤y2≤1, x1>x2;
所述第一N型半导体层的厚度为200nm～5000nm；The thickness of the first N-type semiconductor layer is 200nm-5000nm;
所述第一N型半导体层的N型掺杂浓度为1×10 17cm -3～1×10 19cm -3。 The N-type doping concentration of the first N-type semiconductor layer is 1×10 17 cm -3 to 1×10 19 cm -3 .
可选地，所述第二N型半导体层的材质为Al x3In y3Ga 1-x3-y3N，其中，0≤x3≤1，0≤y3≤1，x2>x3； Optionally, the material of the second N-type semiconductor layer is Al x3 In y3 Ga 1-x3-y3 N, wherein, 0≤x3≤1, 0≤y3≤1, x2>x3;
所述第二N型半导体层的厚度为500nm～5000nm；The thickness of the second N-type semiconductor layer is 500nm-5000nm;
所述第二N型半导体层的N型掺杂浓度为1×10 18cm -3～1×10 20cm -3。 The N-type doping concentration of the second N-type semiconductor layer is 1×10 18 cm -3 to 1×10 20 cm -3 .
可选地，所述多量子阱层为以Al x4In y4Ga 1-x4-y4N为量子垒、以Al x5In y5Ga 1-x5-y5N为量子阱的结构层，其中，0≤x4≤1、0≤y4≤1，0≤x5≤1，0≤y5≤1，x4>x5； Optionally, the multiple quantum well layer is a structural layer with Al x4 In y4 Ga 1-x4-y4 N as quantum barriers and Al x5 In y5 Ga 1-x5-y5 N as quantum wells, where 0≤ x4≤1, 0≤y4≤1, 0≤x5≤1, 0≤y5≤1, x4>x5;
所述量子垒的厚度为1nm～50nm；The thickness of the quantum barrier is 1 nm to 50 nm;
所述量子阱的厚度为1nm～50nm；所述量子阱个数大于1。The thickness of the quantum well is 1nm-50nm; the number of the quantum well is greater than 1.
可选地，当所述P型空穴输送层为单层AlInGaN材料层时，所述P型空穴输送层的材质为Al x6In y6Ga 1-x6-y6N，其中，0≤x6≤1、0≤y6≤1，x4>x6>x5； Optionally, when the P-type hole transport layer is a single-layer AlInGaN material layer, the material of the P-type hole transport layer is Al x6 In y6 Ga 1-x6-y6 N, where 0≤x6≤ 1. 0≤y6≤1, x4>x6>x5;
所述P型空穴输送层的厚度为0.5nm～50nm；The thickness of the P-type hole transport layer is 0.5 nm to 50 nm;
所述P型空穴输送层中的P型掺杂浓度为1×10 18cm -3～1×10 20cm -3。 The P-type doping concentration in the P-type hole transport layer is 1×10 18 cm -3 -1×10 20 cm -3 .
可选地，当所述P型空穴输送层为AlInGaN/AlInGaN超晶格结构层时，所述P型空穴输送层的材质为Al x7In y7Ga 1-x7-y7N/Al x8In y8Ga 1-x8-y8N，其中，Al x7In y7Ga 1-x7-y7N和Al x8In y8Ga 1-x8-y8N的厚度均大于0.5nm，超晶格的周期数大于等于1，0≤x7≤1，0≤y7≤1，0≤x8≤1，0≤y8≤1，x4>x8>x7>x5； Optionally, when the P-type hole transport layer is an AlInGaN/AlInGaN superlattice structure layer, the material of the P-type hole transport layer is Al x7 In y7 Ga 1-x7-y7 N/Al x8 In y8 Ga 1-x8-y8 N, among them, the thickness of Al x7 In y7 Ga 1-x7-y7 N and Al x8 In y8 Ga 1-x8-y8 N is greater than 0.5nm, and the period number of superlattice is greater than or equal to 1 , 0≤x7≤1, 0≤y7≤1, 0≤x8≤1, 0≤y8≤1, x4>x8>x7>x5;
所述P型空穴输送层中的P型掺杂浓度为1×10 18cm -3～1×10 20cm -3。 The P-type doping concentration in the P-type hole transport layer is 1×10 18 cm -3 -1×10 20 cm -3 .
可选地，所述P型电子阻挡层的材质为掺杂Mg的Al x9In y9Ga 1-x9-y9N，其中，0≤x9≤1，0≤y9≤1，x9>x4； Optionally, the material of the P-type electron blocking layer is Mg-doped Al x9 In y9 Ga 1-x9- y9 N, wherein, 0≤x9≤1, 0≤y9≤1, x9>x4;
所述P型电子阻挡层的厚度为2nm～100nm；The thickness of the P-type electron blocking layer is 2 nm to 100 nm;
P型电子阻挡层的P型掺杂浓度为1×10 18cm -3～1×10 20cm -3。 The P-type doping concentration of the P-type electron blocking layer is 1×10 18 cm -3 to 1×10 20 cm -3 .
可选地，所述P型半导体传输层的材质为Al x0In y0Ga 1-x0-y0N，其中，0≤x0≤1，0≤y0≤1，同时x0>x5； Optionally, the material of the P-type semiconductor transport layer is Al x0 In y0 Ga 1-x0-y0 N, where 0≤x0≤1, 0≤y0≤1, and x0>x5;
所述P型半导体传输层的厚度为5nm～1000nm；所述P型半导体传 输层的P型掺杂浓度为1×10 18cm -3～1×10 20cm -3； The thickness of the P-type semiconductor transport layer is 5 nm to 1000 nm; the P-type doping concentration of the P-type semiconductor transport layer is 1×10 18 cm -3 to 1×10 20 cm -3 ;
所述P型半导体接触层为P型高掺层；The P-type semiconductor contact layer is a P-type highly doped layer;
所述P型半导体接触层的P型掺杂浓度为1×10 19cm -3～1×10 21cm -3； The P-type doping concentration of the P-type semiconductor contact layer is 1×10 19 cm -3 to 1×10 21 cm -3 ;
所述P型半导体接触层的厚度为1nm～20nm。The thickness of the P-type semiconductor contact layer is 1nm-20nm.
与现有技术相比，本发明的有益效果：Compared with prior art, the beneficial effect of the present invention:
本发明提供的AlInGaN半导体发光器件中，通过将P型空穴输送层设置为单层AlInGaN材料层或AlInGaN/AlInGaN超晶格结构层，能够提高量子阱附近空穴的产生率，源源不断地向量子阱中提供大量的空穴，以提高AlInGaN量子阱中电子空穴复合效率，提升AlInGaN发光二极管的性能，进而还可以实现以下优点：In the AlInGaN semiconductor light-emitting device provided by the present invention, by setting the P-type hole transport layer as a single-layer AlInGaN material layer or an AlInGaN/AlInGaN superlattice structure layer, the generation rate of holes near the quantum well can be improved, and the holes can be continuously supplied to the quantum well. A large number of holes are provided in the quantum wells to improve the electron-hole recombination efficiency in the AlInGaN quantum wells, improve the performance of AlInGaN light-emitting diodes, and then achieve the following advantages:
1、解决了高Al组分P型AlInGaN中空穴激活能高、空穴浓度低的问题；1. Solved the problem of high hole activation energy and low hole concentration in high Al composition P-type AlInGaN;
2、解决了高Al组分P型AlInGaN电子阻挡层对空穴阻挡太大的问题，提高了空穴注入水平；2. Solved the problem that the high Al composition P-type AlInGaN electron blocking layer blocked too much holes, and improved the hole injection level;
3、明显改善了AlInGaN半导体发光器件的发光性能，尤其是紫光和紫外光发光器件的发光性能。3. The luminous performance of AlInGaN semiconductor light-emitting devices is obviously improved, especially the luminous performance of purple and ultraviolet light-emitting devices.
说明书附图Instructions attached
下面结合附图对本发明作进一步说明：The present invention will be further described below in conjunction with accompanying drawing:
图1为本发明提供的AlInGaN半导体发光器件的结构示意图；FIG. 1 is a schematic structural view of an AlInGaN semiconductor light emitting device provided by the present invention;
图2为P型空穴输送层为单层AlInGaN材料层时AlInGaN半导体发光器件的结构示意图；2 is a schematic structural view of an AlInGaN semiconductor light-emitting device when the P-type hole transport layer is a single-layer AlInGaN material layer;
图3为P型空穴输送层为AlInGaN/AlInGaN超晶格结构层时AlInGaN半导体发光器件的结构示意图；3 is a schematic structural view of an AlInGaN semiconductor light-emitting device when the P-type hole transport layer is an AlInGaN/AlInGaN superlattice structure layer;
图4为本发明提供的AlInGaN半导体发光器件的制备方法的流程图。Fig. 4 is a flowchart of a method for manufacturing an AlInGaN semiconductor light emitting device provided by the present invention.
具体实施方式detailed description
下面结合本发明实施例中的附图，对本发明实施例中技术方案进行详细的描述，显然，所描述的实施例仅是本发明一部分实施例，而不是全部的实施例；基于本发明中的实施例，本领域普通技术人员在没有做出创造 性劳动前提下所获得的所有其他实施例都属于本发明保护的范围。Below in conjunction with the drawings in the embodiments of the present invention, the technical solutions in the embodiments of the present invention are described in detail. Obviously, the described embodiments are only part of the embodiments of the present invention, not all embodiments; based on the present invention Embodiments, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
本发明的目的是提供一种AlInGaN半导体发光器件，以提高AlInGaN量子阱中电子空穴复合效率，进而提升AlInGaN发光二极管的性能。The object of the present invention is to provide an AlInGaN semiconductor light-emitting device, so as to improve the electron-hole recombination efficiency in the AlInGaN quantum well, and further improve the performance of the AlInGaN light-emitting diode.
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图和具体实施方式对本发明作进一步详细的说明。In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
如图1所示，本发明提供的AlInGaN半导体发光器件，包括：衬底1、半导体缓冲层2、第一N型半导体层3、第二N型半导体层4、多量子阱层5、P型空穴输送层6、P型电子阻挡层7、P型半导体传输层8和P型半导体接触层9。As shown in Figure 1, the AlInGaN semiconductor light-emitting device provided by the present invention includes: a substrate 1, a semiconductor buffer layer 2, a first N-type semiconductor layer 3, a second N-type semiconductor layer 4, a multi-quantum well layer 5, a P-type A hole transport layer 6 , a P-type electron blocking layer 7 , a P-type semiconductor transport layer 8 and a P-type semiconductor contact layer 9 .
半导体缓冲层2生长在衬底1上。第一N型半导体层3生长在半导体缓冲层2上。第二N型半导体层4生长在第一N型半导体层3上。多量子阱层5生长在第二N型半导体层4上。P型空穴输送层6生长在多量子阱层5上。P型电子阻挡层7生长在P型空穴输送层6上。P型半导体传输层8和P型半导体接触层9生长在P型电子阻挡层7上。The semiconductor buffer layer 2 is grown on the substrate 1 . The first N-type semiconductor layer 3 is grown on the semiconductor buffer layer 2 . The second N-type semiconductor layer 4 is grown on the first N-type semiconductor layer 3 . The multiple quantum well layer 5 is grown on the second N-type semiconductor layer 4 . P-type hole transport layer 6 is grown on multiple quantum well layer 5 . P-type electron blocking layer 7 is grown on P-type hole transport layer 6 . The P-type semiconductor transport layer 8 and the P-type semiconductor contact layer 9 are grown on the P-type electron blocking layer 7 .
P型空穴输送层6为单层AlInGaN材料层或AlInGaN/AlInGaN超晶格结构层。其中，P型空穴输送层6为单层AlInGaN材料层时AlInGaN半导体发光器件的具体结构如图2所示。P型空穴输送层6为AlInGaN/AlInGaN超晶格结构层时AlInGaN半导体发光器件的具体结构如图3所示。The P-type hole transport layer 6 is a single-layer AlInGaN material layer or an AlInGaN/AlInGaN superlattice structure layer. Wherein, the specific structure of the AlInGaN semiconductor light emitting device when the P-type hole transport layer 6 is a single layer of AlInGaN material is shown in FIG. 2 . The specific structure of the AlInGaN semiconductor light emitting device when the P-type hole transport layer 6 is an AlInGaN/AlInGaN superlattice structure layer is shown in FIG. 3 .
在本发明中，所采用的衬底1优选为蓝宝石、Si、SiC、AlN、石英玻璃或GaN。In the present invention, the substrate 1 used is preferably sapphire, Si, SiC, AlN, quartz glass or GaN.
半导体缓冲层2的材质优选采用Al x1In y1Ga 1-x1-y1N，其中，0≤x1≤1，0≤y1≤1。半导体缓冲层2的厚度为200nm～5000nm。 The material of the semiconductor buffer layer 2 is preferably Al x1 In y1 Ga 1-x1-y1 N, where 0≤x1≤1, 0≤y1≤1. The thickness of the semiconductor buffer layer 2 is 200nm-5000nm.
第一N型半导体层3的材质优选采用Al x2In y2Ga 1-x2-y2N，其中，0≤x2≤1，0≤y2≤1，x1>x2。第一N型半导体层3的厚度优选为200nm～5000nm。第一N型半导体层3的N型掺杂浓度优选为1×10 17cm -3～1×10 19cm -3。 The material of the first N-type semiconductor layer 3 is preferably Al x2 In y2 Ga 1-x2-y2 N, where 0≤x2≤1, 0≤y2≤1, and x1>x2. The thickness of the first N-type semiconductor layer 3 is preferably 200 nm to 5000 nm. The N-type doping concentration of the first N-type semiconductor layer 3 is preferably 1×10 17 cm −3 to 1×10 19 cm −3 .
第二N型半导体层4的材质优选采用为Al x3In y3Ga 1-x3-y3N，其中，0≤x3≤1，0≤y3≤1，x2>x3。第二N型半导体层4的厚度优选为500nm～5000nm。第二N型半导体层4的N型掺杂浓度为1×10 18cm -3～1×10 20cm -3。 The material of the second N-type semiconductor layer 4 is preferably Al x3 In y3 Ga 1-x3-y3 N, where 0≤x3≤1, 0≤y3≤1, and x2>x3. The thickness of the second N-type semiconductor layer 4 is preferably 500 nm to 5000 nm. The N-type doping concentration of the second N-type semiconductor layer 4 is 1×10 18 cm −3 to 1×10 20 cm −3 .
多量子阱层5优选为以Al x4In y4Ga 1-x4-y4N为量子垒、以Al x5In y5Ga 1-x5-y5N为量子阱的结构层，其中，0≤x4≤1、0≤y4≤1，0≤x5≤1，0≤y5≤1，x4>x5。量子垒的厚度优选为1nm～50nm。量子阱的厚度优选为1nm～50nm。量子阱个数优选大于1。 The multi-quantum well layer 5 is preferably a structural layer with Al x4 In y4 Ga 1-x4-y4 N as the quantum barrier and Al x5 In y5 Ga 1-x5-y5 N as the quantum well, wherein 0≤x4≤1, 0≤y4≤1, 0≤x5≤1, 0≤y5≤1, x4>x5. The thickness of the quantum barrier is preferably 1 nm to 50 nm. The thickness of the quantum well is preferably 1 nm to 50 nm. The number of quantum wells is preferably greater than one.
当P型空穴输送层6为单层AlInGaN材料层时，P型空穴输送层6的材质优选为Al x6In y6Ga 1-x6-y6N，其中，0≤x6≤1、0≤y6≤1，x4>x6>x5。P型空穴输送层6的厚度优选为0.5nm～50nm。P型空穴输送层6中的P型掺杂浓度优选为1×10 18cm -3～1×10 20cm -3。 When the P-type hole transport layer 6 is a single-layer AlInGaN material layer, the material of the P-type hole transport layer 6 is preferably Al x6 In y6 Ga 1-x6-y6 N, where 0≤x6≤1, 0≤y6 ≤1, x4>x6>x5. The thickness of the P-type hole transport layer 6 is preferably 0.5 nm to 50 nm. The P-type doping concentration in the P-type hole transport layer 6 is preferably 1×10 18 cm −3 to 1×10 20 cm −3 .
当P型空穴输送层6为AlInGaN/AlInGaN超晶格结构层时，P型空穴输送层6的材质优选为Al x7In y7Ga 1-x7-y7N/Al x8In y8Ga 1-x8-y8N，其中，Al x7In y7Ga 1-x7-y7N和Al x8In y8Ga 1-x8-y8N的厚度均大于0.5nm，超晶格的周期数大于等于1，0≤x7≤1，0≤y7≤1，0≤x8≤1，0≤y8≤1，x4>x8>x7>x5。P型空穴输送层6中的P型掺杂浓度优选为1×10 18cm -3～1×10 20cm -3。 When the P-type hole transport layer 6 is an AlInGaN/AlInGaN superlattice structure layer, the material of the P-type hole transport layer 6 is preferably Al x7 In y7 Ga 1-x7-y7 N/Al x8 In y8 Ga 1-x8 -y8 N, wherein, the thickness of Al x7 In y7 Ga 1-x7-y7 N and Al x8 In y8 Ga 1-x8-y8 N is greater than 0.5nm, the period number of superlattice is greater than or equal to 1, 0≤x7≤ 1, 0≤y7≤1, 0≤x8≤1, 0≤y8≤1, x4>x8>x7>x5. The P-type doping concentration in the P-type hole transport layer 6 is preferably 1×10 18 cm −3 to 1×10 20 cm −3 .
P型电子阻挡层7的材质优选为掺杂Mg的Al x9In y9Ga 1-x9-y9N，其中，0≤x9≤1，0≤y9≤1，x9>x4。P型电子阻挡层7的厚度优选为2nm～100nm。P型电子阻挡层7的P型掺杂浓度优选为1×10 18cm -3～1×10 20cm -3。 The material of the P-type electron blocking layer 7 is preferably Mg-doped Al x9 In y9 Ga 1-x9- y9 N, where 0≤x9≤1, 0≤y9≤1, and x9>x4. The thickness of the P-type electron blocking layer 7 is preferably 2 nm to 100 nm. The P-type doping concentration of the P-type electron blocking layer 7 is preferably 1×10 18 cm −3 to 1×10 20 cm −3 .
P型半导体传输层8的材质优选为Al x0In y0Ga 1-x0-y0N，其中，0≤x0≤1，0≤y0≤1，同时x0>x5。P型半导体传输层8的厚度优选为5nm～1000nm。P型半导体传输层8的P型掺杂浓度优选为1×10 18cm -3～1×10 20cm -3。 The material of the P-type semiconductor transport layer 8 is preferably Al x0 In y0 Ga 1-x0-y0 N, where 0≤x0≤1, 0≤y0≤1, and x0>x5. The thickness of the P-type semiconductor transport layer 8 is preferably 5 nm to 1000 nm. The P-type doping concentration of the P-type semiconductor transport layer 8 is preferably 1×10 18 cm −3 to 1×10 20 cm −3 .
P型半导体接触层9优选为P型高掺层。P型半导体接触层9的P型掺杂浓度优选为1×10 19cm -3～1×10 21cm -3。P型半导体接触层9的厚度优选为1nm～20nm。 The P-type semiconductor contact layer 9 is preferably a P-type highly doped layer. The P-type doping concentration of the P-type semiconductor contact layer 9 is preferably 1×10 19 cm −3 to 1×10 21 cm −3 . The thickness of the P-type semiconductor contact layer 9 is preferably 1 nm to 20 nm.
下面提供一种上述AlInGaN半导体发光器件的制备方法，以对上述AlInGaN半导体发光器件的具体结构进行说明。A method for manufacturing the above-mentioned AlInGaN semiconductor light-emitting device is provided below to illustrate the specific structure of the above-mentioned AlInGaN semiconductor light-emitting device.
如图4所示，该AlInGaN半导体发光器件的制备方法，包括：As shown in Figure 4, the preparation method of the AlInGaN semiconductor light emitting device includes:
步骤101：在衬底1上生长半导体缓冲层2。Step 101 : growing a semiconductor buffer layer 2 on the substrate 1 .
步骤102：在半导体缓冲层2上生长第一N型半导体层3。Step 102 : growing a first N-type semiconductor layer 3 on the semiconductor buffer layer 2 .
步骤103：在第一N型半导体层3上生长第二N型半导体层4。Step 103 : growing a second N-type semiconductor layer 4 on the first N-type semiconductor layer 3 .
步骤104：在第二N型半导体层4上生长多量子阱层5。Step 104 : growing a multiple quantum well layer 5 on the second N-type semiconductor layer 4 .
步骤105：在多量子阱层5上生长P型空穴输送层6。Step 105: growing a P-type hole transport layer 6 on the multi-quantum well layer 5 .
步骤106：在P型空穴输送层6上生长P型电子阻挡层7。Step 106 : growing a P-type electron blocking layer 7 on the P-type hole transport layer 6 .
步骤107：在P型电子阻挡层7上生长P型半导体传输层8和P型半导体接触层9。Step 107 : growing a P-type semiconductor transport layer 8 and a P-type semiconductor contact layer 9 on the P-type electron blocking layer 7 .
并且，在步骤101之前，上述提供的制备方法还包括：And, before step 101, the preparation method provided above also includes:
衬底1放入高温MOCVD设备中，通入氢气，高温1100℃烘烤，清洗衬底1表面的氧化物和杂质。The substrate 1 is placed in a high-temperature MOCVD device, fed with hydrogen gas, and baked at a high temperature of 1100° C. to clean oxides and impurities on the surface of the substrate 1 .
在上述AlInGaN半导体发光器件各层的制备过程中，各层选用的材质、厚度、是否掺加杂质等依据所需功能进行设定。In the preparation process of each layer of the AlInGaN semiconductor light-emitting device, the material, thickness, and whether impurities are added to each layer are set according to the required functions.
下面基于本发明提供的上述制备方法，提供多个实施例对本发明制备得到的AlInGaN半导体发光器件的具体结构选择和性能进行说明。Based on the above preparation method provided by the present invention, multiple examples are provided below to illustrate the specific structure selection and performance of the AlInGaN semiconductor light emitting device prepared by the present invention.
实施例1Example 1
将蓝宝石图形衬底放入高温MOCVD设备中，通入氢气，高温1100℃烘烤，清洗衬底表面的氧化物和杂质。Put the sapphire pattern substrate into the high-temperature MOCVD equipment, pass through hydrogen gas, and bake at a high temperature of 1100°C to clean the oxides and impurities on the surface of the substrate.
高温生长非掺杂的AlN层，AlN层的厚度控制在3μm。A non-doped AlN layer is grown at high temperature, and the thickness of the AlN layer is controlled at 3 μm.
在此非掺杂的AlN层上生长第一N型Al 0.6Ga 0.4N层，此N型Al 0.6Ga 0.4N层的厚度为1μm，掺杂浓度为1×10 18cm -3。 A first N-type Al 0.6 Ga 0.4 N layer is grown on the non-doped AlN layer. The N-type Al 0.6 Ga 0.4 N layer has a thickness of 1 μm and a doping concentration of 1×10 18 cm −3 .
在此非掺杂的AlN层上生长第一N型Al 0.5Ga 0.4N层，此N型Al 0.5Ga 0.4N层的厚度为1μm，掺杂浓度为1×10 19cm -3。 A first N-type Al 0.5 Ga 0.4 N layer is grown on the non-doped AlN layer. The N-type Al 0.5 Ga 0.4 N layer has a thickness of 1 μm and a doping concentration of 1×10 19 cm −3 .
将温度调至量子阱温度，生长Al 0.25In 0.01Ga 0.74N/Al 0.5In 0.01Ga 0.49N多量子阱的结构，周期厚度为14nm(其中阱宽为2nm，垒宽为12nm)，其周期数为8。 Adjust the temperature to the quantum well temperature, grow Al 0.25 In 0.01 Ga 0.74 N/Al 0.5 In 0.01 Ga 0.49 N multi-quantum well structure, the period thickness is 14nm (wherein the well width is 2nm, the barrier width is 12nm), the period number for 8.
在已生长好的多量子阱的结构上生长一层4nm厚的Al 0.35In 0.01Ga 0.64N空穴输送层，其P型掺Mg，掺杂浓度为1×10 19cm -3。 A 4nm-thick Al 0.35 In 0.01 Ga 0.64 N hole transport layer was grown on the grown multiple quantum well structure, and its P-type Mg doped layer was grown with a doping concentration of 1×10 19 cm -3 .
随后生长一层40nm厚的P型Al 0.60In 0.01Ga 0.39N电子阻挡层，掺杂浓度为1×10 19cm -3。 Subsequently, a 40nm-thick P-type Al 0.60 In 0.01 Ga 0.39 N electron blocking layer is grown with a doping concentration of 1×10 19 cm -3 .
继续生长一层具有高空穴浓度和低紫外线吸收率的P型Al 0.40In 0.01Ga 0.59N传输层，P型传输层的厚度为15nm，掺杂浓度为1×10 19cm -3。 Continue to grow a P-type Al 0.40 In 0.01 Ga 0.59 N transport layer with high hole concentration and low ultraviolet absorption rate, the thickness of the P-type transport layer is 15nm, and the doping concentration is 1×10 19 cm -3 .
最后生长一层具有高掺杂浓度的P型Al 0.15Ga 0.75N接触层，P型接触 层的厚度为5nm，掺杂浓度为1×10 20cm -3。 Finally, a P-type Al 0.15 Ga 0.75 N contact layer with a high doping concentration is grown, the thickness of the P-type contact layer is 5 nm, and the doping concentration is 1×10 20 cm -3 .
生长的外延片进行表面清洗，进行芯片制作，芯片大小为500μm×500μm。边缘N电极刻蚀，边缘N电极的宽度为20μm，刻蚀深度为500nm。N电极蒸镀Ti/Au，厚度分别为100nm/100nm，形成良好的欧姆接触。蒸镀Al金属作为紫光反射层，蒸镀的厚度为500nm，完全能够反射量子阱发射出来的紫外光。The surface of the grown epitaxial wafer is cleaned, and a chip is made, and the size of the chip is 500 μm×500 μm. The edge N electrode is etched, the width of the edge N electrode is 20 μm, and the etching depth is 500 nm. Ti/Au is evaporated on the N electrode with a thickness of 100nm/100nm respectively to form a good ohmic contact. Al metal is vapor-deposited as the ultraviolet light reflection layer with a thickness of 500nm, which can completely reflect the ultraviolet light emitted by the quantum well.
在此基础上，蒸镀Ni/Au合金作为P型电极，厚度分别为1nm/10nm，形成良好的P型欧姆接触。On this basis, evaporate Ni/Au alloy as a P-type electrode with a thickness of 1nm/10nm respectively to form a good P-type ohmic contact.
此芯片制成倒装芯片大小为500μm×500μm的情况下，通入100mA电流，波长为275nm，亮度为30mW。When this chip is made into a flip-chip size of 500μm×500μm, a current of 100mA is passed through, the wavelength is 275nm, and the brightness is 30mW.
实施例2Example 2
蓝宝石图形衬底放入高温MOCVD设备中，通入氢气，高温1100℃烘烤，清洗衬底表面的氧化物和杂质。The sapphire pattern substrate is placed in a high-temperature MOCVD device, fed with hydrogen, and baked at a high temperature of 1100°C to clean the oxides and impurities on the surface of the substrate.
高温生长非掺的Al 0.99Ga 0.01N缓冲层，Al 0.99Ga 0.01N层的厚度控制在4μm。 A non-doped Al 0.99 Ga 0.01 N buffer layer is grown at high temperature, and the thickness of the Al 0.99 Ga 0.01 N layer is controlled at 4 μm.
此非掺杂的Al 0.99Ga 0.01N层上继续生长第一层N型Al 0.8Ga 0.2N层，此N型Al 0.8Ga 0.2N层的厚度为1.5μm，掺杂浓度为2×10 18cm -3。 Continue to grow the first N-type Al 0.8 Ga 0.2 N layer on the non-doped Al 0.99 Ga 0.01 N layer. The thickness of this N-type Al 0.8 Ga 0.2 N layer is 1.5 μm, and the doping concentration is 2×10 18 cm -3 .
在第一层N型Al 0.8Ga 0.2N层基础上生长第二N型Al 0.6Ga 0.4N层，此层的厚度为1.5μm，掺杂浓度为1×10 19cm -3。 A second N-type Al 0.6 Ga 0.4 N layer is grown on the basis of the first N-type Al 0.8 Ga 0.2 N layer, the thickness of this layer is 1.5 μm, and the doping concentration is 1×10 19 cm -3 .
温度调至生长量子阱的温度，生长Al 0.35In 0.01Ga 0.64N/Al 0.5In 0.01Ga 0.49N多量子阱的结构，周期厚度为12.5nm(其中阱宽为1.5nm，垒宽为11nm)，其周期数为4。 Adjust the temperature to the temperature of growing quantum wells, grow the structure of Al 0.35 In 0.01 Ga 0.64 N/Al 0.5 In 0.01 Ga 0.49 N multiple quantum wells, the periodic thickness is 12.5nm (wherein the well width is 1.5nm, the barrier width is 11nm), Its cycle number is 4.
在已生长好的多量子阱的结构上生长一层2nm厚的Al 0.4In 0.01Ga 0.59N空穴输送层，其P型掺Mg，掺杂浓度为5×10 19cm -3。 A 2nm-thick Al 0.4 In 0.01 Ga 0.59 N hole transport layer was grown on the grown multiple quantum well structure, and its P-type Mg-doped layer was grown with a doping concentration of 5×10 19 cm -3 .
在空穴传输层基础上生长50nm厚的Al 0.65In 0.01Ga 0.34N电子阻挡层。 A 50nm-thick Al 0.65 In 0.01 Ga 0.34 N electron blocking layer is grown on the basis of the hole transport layer.
随后再继续生长一层P型Al 0.45In 0.01Ga 0.54N传输层，P型接触层的厚度为20nm，掺杂浓度为1×10 20cm -3，不再做P型接触层。 Then continue to grow a P-type Al 0.45 In 0.01 Ga 0.54 N transport layer, the thickness of the P-type contact layer is 20nm, and the doping concentration is 1×10 20 cm -3 , and the P-type contact layer is no longer used.
生长的外延片进行表面清洗，进行芯片制作，芯片大小为500μm×500μm。边缘N电极刻蚀，边缘N电极的宽度为30μm，刻蚀深度为400nm。中心区域的电极为4长条形，长条形的宽度为40μm，长度为 300μm，刻蚀深度为400nm。The surface of the grown epitaxial wafer is cleaned, and a chip is made, and the size of the chip is 500 μm×500 μm. The edge N electrode is etched, the width of the edge N electrode is 30 μm, and the etching depth is 400 nm. The electrodes in the central area are 4 strips, the width of the strips is 40 μm, the length is 300 μm, and the etching depth is 400 nm.
N电极蒸镀Ti/Au，厚度分别为100nm/200nm，形成良好的欧姆接触。Ti/Au is evaporated on the N electrode with a thickness of 100nm/200nm respectively to form a good ohmic contact.
在此基础上，蒸镀Ni/Au合金作为P型电极，厚度分别为1nm/10nm，形成良好的P型欧姆接触，继续蒸镀Rh金属200nm，以形成很好的P型区紫外光反射。On this basis, vapor-deposit Ni/Au alloy as P-type electrode with a thickness of 1nm/10nm respectively to form a good P-type ohmic contact, and continue to vapor-deposit Rh metal 200nm to form a good P-type region for ultraviolet light reflection.
此芯片制成倒装芯片，芯片大小为500μm×500μm的情况下，通入100mA电流，波长为265nm，亮度为30mW。This chip is made into a flip chip, and when the chip size is 500 μm×500 μm, a current of 100 mA is passed through, the wavelength is 265 nm, and the brightness is 30 mW.
实施例3Example 3
AlN衬底放入高温MOCVD设备中，通入氢气，高温1100℃烘烤，清洗衬底表面的氧化物和杂质。The AlN substrate is placed in a high-temperature MOCVD device, fed with hydrogen, and baked at a high temperature of 1100 ° C to clean the oxides and impurities on the surface of the substrate.
高温生长非掺的Al 0.99Ga 0.01N缓冲层，Al 0.99Ga 0.01N层的厚度控制在2μm。 A non-doped Al 0.99 Ga 0.01 N buffer layer is grown at high temperature, and the thickness of the Al 0.99 Ga 0.01 N layer is controlled at 2 μm.
此非掺杂的Al 0.99Ga 0.01N层上继续生长第一层N型Al 0.65Ga 0.35N层，此N型Al 0.65Ga 0.35N层的厚度为1.5μm，掺杂浓度为1×10 18cm -3。 Continue to grow the first N-type Al 0.65 Ga 0.35 N layer on the non-doped Al 0.99 Ga 0.01 N layer. The N-type Al 0.65 Ga 0.35 N layer has a thickness of 1.5 μm and a doping concentration of 1×10 18 cm -3 .
在第一层N型Al 0.65Ga 0.35N层基础上生长第二N型Al 0.5Ga 0.5N层，此层的厚度为1.0μm，掺杂浓度为1×10 19cm -3。 A second N-type Al 0.5 Ga 0.5 N layer is grown on the basis of the first N-type Al 0.65 Ga 0.35 N layer, the thickness of this layer is 1.0 μm, and the doping concentration is 1×10 19 cm -3 .
温度调至生长量子阱的温度，生长Al 0.15In 0.01Ga 0.84N/Al 0.4In 0.01Ga 0.59N多量子阱的结构，周期厚度为15nm(其中阱宽为3nm，垒宽为12nm)，其周期数为6。 Adjust the temperature to the temperature of growing quantum wells, grow the structure of Al 0.15 In 0.01 Ga 0.84 N/Al 0.4 In 0.01 Ga 0.59 N multiple quantum wells, the periodic thickness is 15nm (wherein the well width is 3nm, the barrier width is 12nm), the period The number is 6.
在已生长好的多量子阱的结构上生长一层2nm厚的Al 0.2In 0.01Ga 0.79N空穴输送层，其P型掺Mg，掺杂浓度为2×10 19cm -3。 A 2nm-thick Al 0.2 In 0.01 Ga 0.79 N hole transport layer was grown on the grown multiple quantum well structure, and its P-type Mg-doped layer was grown with a doping concentration of 2×10 19 cm -3 .
在空穴传输层基础上生长30nm厚的Al 0.55In 0.01Ga 0.44N电子阻挡层。 A 30nm-thick Al 0.55 In 0.01 Ga 0.44 N electron blocking layer is grown on the basis of the hole transport layer.
随后再继续生长一层P型Al 0.30In 0.01Ga 0.69N传输层，P型接触层的厚度为30nm，掺杂浓度为1×10 20cm -3。 Then continue to grow a P-type Al 0.30 In 0.01 Ga 0.69 N transport layer, the thickness of the P-type contact layer is 30nm, and the doping concentration is 1×10 20 cm -3 .
P型接触层采用Al 0.10In 0.01Ga 0.89N，厚度为5nm，掺杂浓度为1×10 20cm -3。 The P-type contact layer is made of Al 0.10 In 0.01 Ga 0.89 N with a thickness of 5nm and a doping concentration of 1×10 20 cm -3 .
生长的外延片进行表面清洗，进行芯片制作，芯片大小为500μm×500μm。The surface of the grown epitaxial wafer is cleaned, and a chip is made, and the size of the chip is 500 μm×500 μm.
N电极蒸镀Ti/Au，厚度分别为100nm/200nm，形成良好的欧姆接触。Ti/Au is evaporated on the N electrode with a thickness of 100nm/200nm respectively to form a good ohmic contact.
在此基础上，蒸镀Ni/Au合金作为P型电极，厚度分别为1nm/10nm， 形成良好的P型欧姆接触，继续蒸镀Al金属400nm，以形成很好的P型区紫外光反射。On this basis, vapor-deposit Ni/Au alloy as P-type electrode with a thickness of 1nm/10nm respectively to form a good P-type ohmic contact, and continue to vapor-deposit Al metal for 400nm to form a good ultraviolet light reflection in the P-type region.
此芯片制成倒装芯片，芯片大小为500μm×500μm的情况下，通入100mA电流，波长为305nm，亮度为30mW。This chip is made into a flip chip, and when the chip size is 500 μm×500 μm, a current of 100 mA is passed through, the wavelength is 305 nm, and the brightness is 30 mW.
实施例4Example 4
蓝宝石图形衬底放入高温MOCVD设备中，通入氢气，高温1100℃烘烤，清洗衬底表面的氧化物和杂质。The sapphire pattern substrate is placed in a high-temperature MOCVD device, fed with hydrogen, and baked at a high temperature of 1100°C to clean the oxides and impurities on the surface of the substrate.
高温生长非掺的Al 0.99Ga 0.01N缓冲层，Al 0.99Ga 0.01N层的厚度控制在4μm。 A non-doped Al 0.99 Ga 0.01 N buffer layer is grown at high temperature, and the thickness of the Al 0.99 Ga 0.01 N layer is controlled at 4 μm.
此非掺杂的Al 0.99Ga 0.01N缓冲层上继续生长第一层N型Al 0.8Ga 0.2N层，此N型Al 0.8Ga 0.2N层的厚度为1.5μm，掺杂浓度为2×10 18cm -3。 Continue to grow the first N-type Al 0.8 Ga 0.2 N layer on the non-doped Al 0.99 Ga 0.01 N buffer layer. The N-type Al 0.8 Ga 0.2 N layer has a thickness of 1.5 μm and a doping concentration of 2×10 18 cm -3 .
在第一层N型Al 0.8Ga 0.2N层基础上生长第二N型Al 0.6Ga 0.4N层，此层的厚度为1.5μm，掺杂浓度为1×10 19cm -3。 A second N-type Al 0.6 Ga 0.4 N layer is grown on the basis of the first N-type Al 0.8 Ga 0.2 N layer, the thickness of this layer is 1.5 μm, and the doping concentration is 1×10 19 cm -3 .
温度调至生长量子阱的温度，生长Al 0.35In 0.01Ga 0.64N/Al 0.5In 0.01Ga 0.49N多量子阱的结构，周期厚度为12.5nm(其中阱宽为1.5nm，垒宽为11nm)，其周期数为4。 Adjust the temperature to the temperature of growing quantum wells, grow the structure of Al 0.35 In 0.01 Ga 0.64 N/Al 0.5 In 0.01 Ga 0.49 N multiple quantum wells, the periodic thickness is 12.5nm (wherein the well width is 1.5nm, the barrier width is 11nm), Its cycle number is 4.
在已生长好的多量子阱的结构上生长一层0.5nm/0.5nm厚的Al 0.38In 0.01Ga 0.61N/Al 0.48In 0.01Ga 0.51N空穴输送层，周期数为5，其P型掺Mg，掺杂浓度为1×10 19cm -3。 A layer of 0.5nm/0.5nm thick Al 0.38 In 0.01 Ga 0.61 N/Al 0.48 In 0.01 Ga 0.51 N hole transport layer was grown on the grown multiple quantum well structure with a period number of 5, and its P-type doped Mg, the doping concentration is 1×10 19 cm -3 .
在空穴传输层基础上生长50nm厚的Al 0.65In 0.01Ga 0.34N电子阻挡层。 A 50nm-thick Al 0.65 In 0.01 Ga 0.34 N electron blocking layer is grown on the basis of the hole transport layer.
随后再继续生长一层P型Al 0.45In 0.01Ga 0.54N传输层，P型接触层的厚度为20nm，掺杂浓度为1×10 20cm -3，不再做P型接触层。 Then continue to grow a P-type Al 0.45 In 0.01 Ga 0.54 N transport layer, the thickness of the P-type contact layer is 20nm, and the doping concentration is 1×10 20 cm -3 , and the P-type contact layer is no longer used.
生长的外延片进行表面清洗，进行芯片制作，芯片大小为500μm×500μm。边缘N电极刻蚀，边缘N电极的宽度为30μm，刻蚀深度为400nm。中心区域的电极为4长条形，长条形的宽度为40μm，长度为300μm，刻蚀深度为400nm。The surface of the grown epitaxial wafer is cleaned, and a chip is made, and the size of the chip is 500 μm×500 μm. The edge N electrode is etched, the width of the edge N electrode is 30 μm, and the etching depth is 400 nm. The electrodes in the central area are in the shape of 4 strips, the width of the strips is 40 μm, the length is 300 μm, and the etching depth is 400 nm.
N电极蒸镀Ti/Au，厚度分别为100nm/200nm，形成良好的欧姆接触。Ti/Au is evaporated on the N electrode with a thickness of 100nm/200nm respectively to form a good ohmic contact.
在此基础上，蒸镀Ni/Au合金作为P型电极，厚度分别为1nm/10nm，形成良好的P型欧姆接触，继续蒸镀Rh金属200nm，以形成很好的P型区紫外光反射。On this basis, vapor-deposit Ni/Au alloy as P-type electrode with a thickness of 1nm/10nm respectively to form a good P-type ohmic contact, and continue to vapor-deposit Rh metal 200nm to form a good P-type region for ultraviolet light reflection.
此芯片制成倒装芯片，芯片大小为500μm×500μm的情况下，通入100mA电流，波长为265nm，亮度为30mW。This chip is made into a flip chip, and when the chip size is 500 μm×500 μm, a current of 100 mA is passed through, the wavelength is 265 nm, and the brightness is 30 mW.
实施例5Example 5
AlN衬底放入高温MOCVD设备中，通入氢气，高温1100℃烘烤，清洗衬底表面的氧化物和杂质。The AlN substrate is placed in a high-temperature MOCVD device, fed with hydrogen, and baked at a high temperature of 1100 ° C to clean the oxides and impurities on the surface of the substrate.
高温生长非掺的Al 0.99Ga 0.01N缓冲层，Al 0.99Ga 0.01N层的厚度控制在2μm。 A non-doped Al 0.99 Ga 0.01 N buffer layer is grown at high temperature, and the thickness of the Al 0.99 Ga 0.01 N layer is controlled at 2 μm.
此非掺杂的Al 0.99Ga 0.01N层上继续生长第一层N型Al 0.65Ga 0.35N层，此N型Al 0.65Ga 0.35N层的厚度为1.5μm，掺杂浓度为1×10 18cm -3。 Continue to grow the first N-type Al 0.65 Ga 0.35 N layer on the non-doped Al 0.99 Ga 0.01 N layer. The N-type Al 0.65 Ga 0.35 N layer has a thickness of 1.5 μm and a doping concentration of 1×10 18 cm -3 .
在第一层N型Al 0.65Ga 0.35N层基础上生长第二N型Al 0.5Ga 0.5N层，此层的厚度为1.0μm，掺杂浓度为1×10 19cm -3。 A second N-type Al 0.5 Ga 0.5 N layer is grown on the basis of the first N-type Al 0.65 Ga 0.35 N layer, the thickness of this layer is 1.0 μm, and the doping concentration is 1×10 19 cm -3 .
温度调至生长量子阱的温度，生长Al 0.15In 0.01Ga 0.84N/Al 0.4In 0.01Ga 0.59N多量子阱的结构，周期厚度为15nm(其中阱宽为3nm，垒宽为12nm)，其周期数为6。 Adjust the temperature to the temperature of growing quantum wells, grow the structure of Al 0.15 In 0.01 Ga 0.84 N/Al 0.4 In 0.01 Ga 0.59 N multiple quantum wells, the periodic thickness is 15nm (wherein the well width is 3nm, the barrier width is 12nm), the period The number is 6.
在已生长好的多量子阱的结构上生长一层1nm/1nm厚的Al 0.25In 0.01Ga 0.74N/Al 0.35In 0.01Ga 0.64N空穴输送层，周期数为3，其P型掺Mg，掺杂浓度为1×10 19cm -3。 A layer of 1nm/1nm thick Al 0.25 In 0.01 Ga 0.74 N/Al 0.35 In 0.01 Ga 0.64 N hole transport layer is grown on the grown multi-quantum well structure, the number of periods is 3, and its P-type Mg doped, The doping concentration is 1×10 19 cm -3 .
在空穴传输层基础上生长30nm厚的Al 0.55In 0.01Ga 0.44N电子阻挡层。 A 30nm-thick Al 0.55 In 0.01 Ga 0.44 N electron blocking layer is grown on the basis of the hole transport layer.
随后再继续生长一层P型Al 0.30In 0.01Ga 0.69N传输层，P型接触层的厚度为30nm，掺杂浓度为1×10 20cm -3。 Then continue to grow a P-type Al 0.30 In 0.01 Ga 0.69 N transport layer, the thickness of the P-type contact layer is 30nm, and the doping concentration is 1×10 20 cm -3 .
P型接触层采用Al 0.10In 0.01Ga 0.89N，厚度为5nm，掺杂浓度为1×10 20cm -3。 The P-type contact layer is made of Al 0.10 In 0.01 Ga 0.89 N with a thickness of 5nm and a doping concentration of 1×10 20 cm -3 .
生长的外延片进行表面清洗，进行芯片制作，芯片大小为500μm×500μm。The surface of the grown epitaxial wafer is cleaned, and a chip is made, and the size of the chip is 500 μm×500 μm.
N电极蒸镀Ti/Au，厚度分别为100nm/200nm，形成良好的欧姆接触。Ti/Au is evaporated on the N electrode with a thickness of 100nm/200nm respectively to form a good ohmic contact.
在此基础上，蒸镀Ni/Au合金作为P型电极，厚度分别为1nm/10nm，形成良好的P型欧姆接触，继续蒸镀Al金属400nm，以形成很好的P型区紫外光反射。On this basis, vapor-deposit Ni/Au alloy as P-type electrode with a thickness of 1nm/10nm respectively to form a good P-type ohmic contact, and continue to vapor-deposit Al metal 400nm to form a good P-type region for ultraviolet light reflection.
此芯片制成倒装芯片，芯片大小为500μm×500μm的情况下，通入100mA电流，波长为305nm，亮度为30mW。This chip is made into a flip chip, and when the chip size is 500 μm×500 μm, a current of 100 mA is passed through, the wavelength is 305 nm, and the brightness is 30 mW.
上面结合附图对本发明的实施方式作了详细说明，但是本发明并不限于上述实施方式，在所属技术领域普通技术人员所具备的知识范围内，还可以在不脱离本发明宗旨的前提下做出各种变化。The embodiments of the present invention have been described in detail above in conjunction with the accompanying drawings, but the present invention is not limited to the above embodiments, and can also be made without departing from the gist of the present invention within the scope of knowledge possessed by those of ordinary skill in the art. Various changes.

Claims (10)

  1. 一种AlInGaN半导体发光器件，其特征在于，包括：衬底、半导体缓冲层、第一N型半导体层、第二N型半导体层、多量子阱层、P型空穴输送层、P型电子阻挡层、P型半导体传输层和P型半导体接触层；An AlInGaN semiconductor light-emitting device, characterized in that it includes: a substrate, a semiconductor buffer layer, a first N-type semiconductor layer, a second N-type semiconductor layer, a multi-quantum well layer, a P-type hole transport layer, and a P-type electron blocking layer. Layer, P-type semiconductor transport layer and P-type semiconductor contact layer;
    所述半导体缓冲层生长在所述衬底上；所述第一N型半导体层生长在所述半导体缓冲层上；所述第二N型半导体层生长在所述第一N型半导体层上；所述多量子阱层生长在所述第二N型半导体层上；所述P型空穴输送层生长在所述多量子阱层上；所述P型电子阻挡层生长在所述P型空穴输送层上；P型半导体传输层和所述P型半导体接触层生长在所述P型电子阻挡层上；The semiconductor buffer layer is grown on the substrate; the first N-type semiconductor layer is grown on the semiconductor buffer layer; the second N-type semiconductor layer is grown on the first N-type semiconductor layer; The multiple quantum well layer is grown on the second N-type semiconductor layer; the P-type hole transport layer is grown on the multiple quantum well layer; the P-type electron blocking layer is grown on the P-type hole On the hole transport layer; the P-type semiconductor transport layer and the P-type semiconductor contact layer are grown on the P-type electron blocking layer;
    所述P型空穴输送层为单层AlInGaN材料层或AlInGaN/AlInGaN超晶格结构层。The P-type hole transport layer is a single-layer AlInGaN material layer or an AlInGaN/AlInGaN superlattice structure layer.
  2. 根据权利要求1所述的AlInGaN半导体发光器件，其特征在于，所述衬底为蓝宝石、Si、SiC、AlN、石英玻璃或GaN。The AlInGaN semiconductor light emitting device according to claim 1, wherein the substrate is sapphire, Si, SiC, AlN, quartz glass or GaN.
  3. 根据权利要求1所述的AlInGaN半导体发光器件，其特征在于，所述半导体缓冲层的材质为Al x1In y1Ga 1-x1-y1N，其中，0≤x1≤1，0≤y1≤1；所述半导体缓冲层的厚度为200nm～5000nm。 The AlInGaN semiconductor light emitting device according to claim 1, wherein the material of the semiconductor buffer layer is Al x1 In y1 Ga 1-x1-y1 N, wherein 0≤x1≤1, 0≤y1≤1; The thickness of the semiconductor buffer layer is 200nm-5000nm.
  4. 根据权利要求1所述的AlInGaN半导体发光器件，其特征在于，所述第一N型半导体层的材质为Al x2In y2Ga 1-x2-y2N，其中，0≤x2≤1，0≤y2≤1，x1>x2； The AlInGaN semiconductor light-emitting device according to claim 1, wherein the material of the first N-type semiconductor layer is Al x2 In y2 Ga 1-x2-y2 N, wherein 0≤x2≤1, 0≤y2 ≤1, x1>x2;
    所述第一N型半导体层的厚度为200nm～5000nm；The thickness of the first N-type semiconductor layer is 200nm-5000nm;
    所述第一N型半导体层的N型掺杂浓度为1×10 17cm -3～1×10 19cm -3。 The N-type doping concentration of the first N-type semiconductor layer is 1×10 17 cm -3 to 1×10 19 cm -3 .
  5. 根据权利要求1所述的AlInGaN半导体发光器件，其特征在于，所述第二N型半导体层的材质为Al x3In y3Ga 1-x3-y3N，其中，0≤x3≤1，0≤y3≤1，x2>x3； The AlInGaN semiconductor light-emitting device according to claim 1, wherein the material of the second N-type semiconductor layer is Al x3 In y3 Ga 1-x3-y3 N, wherein 0≤x3≤1, 0≤y3 ≤1, x2>x3;
    所述第二N型半导体层的厚度为500nm～5000nm；The thickness of the second N-type semiconductor layer is 500nm-5000nm;
    所述第二N型半导体层的N型掺杂浓度为1×10 18cm -3～1×10 20cm -3。 The N-type doping concentration of the second N-type semiconductor layer is 1×10 18 cm -3 to 1×10 20 cm -3 .
  6. 根据权利要求1所述的AlInGaN半导体发光器件，其特征在于，所述多量子阱层为以Al x4In y4Ga 1-x4-y4N为量子垒、以Al x5In y5Ga 1-x5-y5N为量子阱的结构层，其中，0≤x4≤1、0≤y4≤1，0≤x5≤1，0≤y5≤1，x4>x5； The AlInGaN semiconductor light-emitting device according to claim 1, characterized in that the multiple quantum well layer is made of Al x4 In y4 Ga 1-x4-y4 N as a quantum barrier and Al x5 In y5 Ga 1-x5-y5 N is the structural layer of the quantum well, wherein, 0≤x4≤1, 0≤y4≤1, 0≤x5≤1, 0≤y5≤1, x4>x5;
    所述量子垒的厚度为1nm～50nm；The thickness of the quantum barrier is 1 nm to 50 nm;
    所述量子阱的厚度为1nm～50nm；所述量子阱个数大于1。The thickness of the quantum well is 1nm-50nm; the number of the quantum well is greater than 1.
  7. 根据权利要求6所述的AlInGaN半导体发光器件，其特征在于，当所述P型空穴输送层为单层AlInGaN材料层时，所述P型空穴输送层的材质为Al x6In y6Ga 1-x6-y6N，其中，0≤x6≤1、0≤y6≤1，x4>x6>x5； The AlInGaN semiconductor light-emitting device according to claim 6, wherein when the P-type hole transport layer is a single-layer AlInGaN material layer, the material of the P-type hole transport layer is Al x6 In y6 Ga 1 -x6-y6 N, where, 0≤x6≤1, 0≤y6≤1, x4>x6>x5;
    所述P型空穴输送层的厚度为0.5nm～50nm；The thickness of the P-type hole transport layer is 0.5 nm to 50 nm;
    所述P型空穴输送层中的P型掺杂浓度为1×10 18cm -3～1×10 20cm -3。 The P-type doping concentration in the P-type hole transport layer is 1×10 18 cm -3 -1×10 20 cm -3 .
  8. 根据权利要求6所述的AlInGaN半导体发光器件，其特征在于，当所述P型空穴输送层为AlInGaN/AlInGaN超晶格结构层时，所述P型空穴输送层的材质为Al x7In y7Ga 1-x7-y7N/Al x8In y8Ga 1-x8-y8N，其中，Al x7In y7Ga 1-x7-y7N和Al x8In y8Ga 1-x8-y8N的厚度均大于0.5nm，超晶格的周期数大于等于1，0≤x7≤1，0≤y7≤1，0≤x8≤1，0≤y8≤1，x4>x8>x7>x5； The AlInGaN semiconductor light-emitting device according to claim 6, wherein when the P-type hole transport layer is an AlInGaN/AlInGaN superlattice structure layer, the material of the P-type hole transport layer is Alx7In y7 Ga 1-x7-y7 N/Al x8 In y8 Ga 1-x8-y8 N, wherein, the thicknesses of Al x7 In y7 Ga 1-x7-y7 N and Al x8 In y8 Ga 1-x8-y8 N are both greater than 0.5nm, the period number of the superlattice is greater than or equal to 1, 0≤x7≤1, 0≤y7≤1, 0≤x8≤1, 0≤y8≤1, x4>x8>x7>x5;
    所述P型空穴输送层中的P型掺杂浓度为1×10 18cm -3～1×10 20cm -3。 The P-type doping concentration in the P-type hole transport layer is 1×10 18 cm -3 -1×10 20 cm -3 .
  9. 根据权利要求6所述的AlInGaN半导体发光器件，其特征在于，所述P型电子阻挡层的材质为掺杂Mg的Al x9In y9Ga 1-x9-y9N，其中，0≤x9≤1，0≤y9≤1，x9>x4； The AlInGaN semiconductor light-emitting device according to claim 6, wherein the material of the P-type electron blocking layer is Mg-doped Al x9 In y9 Ga 1-x9- y9 N, wherein 0≤x9≤1, 0≤y9≤1, x9>x4;
    所述P型电子阻挡层的厚度为2nm～100nm；The thickness of the P-type electron blocking layer is 2 nm to 100 nm;
    P型电子阻挡层的P型掺杂浓度为1×10 18cm -3～1×10 20cm -3。 The P-type doping concentration of the P-type electron blocking layer is 1×10 18 cm -3 to 1×10 20 cm -3 .
  10. 根据权利要求6所述的AlInGaN半导体发光器件，其特征在于，所述P型半导体传输层的材质为Al x0In y0Ga 1-x0-y0N，其中，0≤x0≤1，0≤y0≤1，同时x0>x5； The AlInGaN semiconductor light-emitting device according to claim 6, wherein the material of the P-type semiconductor transport layer is Al x0 In y0 Ga 1-x0-y0 N, wherein 0≤x0≤1, 0≤y0≤ 1, at the same time x0>x5;
    所述P型半导体传输层的厚度为5nm～1000nm；所述P型半导体传输层的P型掺杂浓度为1×10 18cm -3～1×10 20cm -3； The thickness of the P-type semiconductor transport layer is 5 nm to 1000 nm; the P-type doping concentration of the P-type semiconductor transport layer is 1×10 18 cm -3 to 1×10 20 cm -3 ;
    所述P型半导体接触层为P型高掺层；The P-type semiconductor contact layer is a P-type highly doped layer;
    所述P型半导体接触层的P型掺杂浓度为1×10 19cm -3～1×10 21cm -3； The P-type doping concentration of the P-type semiconductor contact layer is 1×10 19 cm -3 to 1×10 21 cm -3 ;
    所述P型半导体接触层的厚度为1nm～20nm。The thickness of the P-type semiconductor contact layer is 1nm-20nm.
PCT/CN2022/070606 2021-06-25 2022-01-07 Alingan semiconductor light emitting device WO2022267446A1 (en)

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