CN203596359U - UV light emitting diode - Google Patents
UV light emitting diode Download PDFInfo
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- CN203596359U CN203596359U CN201320641628.0U CN201320641628U CN203596359U CN 203596359 U CN203596359 U CN 203596359U CN 201320641628 U CN201320641628 U CN 201320641628U CN 203596359 U CN203596359 U CN 203596359U
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Abstract
The utility model relates to the technical field of semiconductor devices, and specifically relates to a UV light emitting diode. The light emitting diode comprises a substrate, an AlN intrinsic layer, a n-type AlxGa1-xN layer, an AlxGa1-xN multiple quantum well layer, a p-type AlxGa1-xN electron barrier layer, a p-type GaN layer, a nanocrystalline metal granule structure, a current spreading layer, a p-type electrode, an n-type electrode, and an inverted substrate. The light emitting diode uses enhancement effect of surface plasmon of the nanocrystalline metal granule structure for material luminescence to improve internal quantum efficiency of the AlGaN quantum well in the AlGaN radical UV light emitting diode, thereby improving luminous efficiency of the UV light emitting diode.
Description
Technical field
The utility model relates to technical field of semiconductor device, is specifically related to a kind of ultraviolet light-emitting diode.
Background technology
At present traditional ultraviolet source used is gas laser and mercury lamp, exist poor efficiency, volume greatly, the shortcoming such as not environmental protection and voltage height.In contrast, ultraviolet light-emitting diode based on AlGaN semi-conducting material is a kind of solid-state ultraviolet source, the many advantages such as it has without mercury pollution, wavelength is adjustable, volume is little, integration is good, energy consumption is low, the life-span is long, at medicine and hygiene fieldses such as sterilizing, cancer detection, treating skin diseases, at field of Environment Protections such as pollutant fast decoupled and water and air cleaning such as dioxin, polychlorinated biphenyl, agricultural chemicals, at high color rendering index (CRI) white-light illuminating energy field, the message areas such as large capacity information transmission and storage have extensive use.But with external quantum efficiency up to compared with more than 85% InGaN base blue-ray LED, luminous power and the efficiency of AlGaN base ultraviolet light-emitting diode are also far from satisfactory at present, wavelength is shorter than the luminous efficiency of UV-LED of 320nm generally below 1%.Causing a high Al contents AlGaN base deep ultraviolet LED efficiency main cause on the low side is the high problem of AlGaN fault in material density.Owing to being difficult to obtain the body material substrate of III group-III nitride, the extension of AlGaN ultraviolet light-emitting diode can only be carried out conventionally in the foreign substrate such as sapphire.Because the lattice constant of these foreign substrate is different from the AlGaN material of high aluminium component, and because the surface mobility of Al atom is very low, in the epitaxial process of high aluminium component AlGaN, the Al atom that arrives at reaction interface is difficult to the minimum point that moves to step or twist together these energy, therefore cannot complete desirable two-dimentional epitaxial growth, the tiny subgrain that causes the AlGaN film of high Al contents to be distributed by many mosaic shapes forms.Between these subgrains, can be formed on density up to 10
9～10
11cm
-2threading dislocation.Threading dislocation in material plays a part non-radiative recombination center, and too high dislocation density can the strong internal quantum efficiency that reduces LED.Although can be by continuing to optimize the epitaxial growth technology of AlGaN material, suppress the formation of the inside defect as far as possible, grow the thick high-quality AlN template that reaches 10 μ m such as the people such as the MaxShatalov of SET company of the U.S. mainly move enhancement mode MOCVD by employing, made all dislocation densities in quantum well region of device epitaxial structure 2 × 10
8cm
-2below, successfully realized external quantum efficiency up to 10.4% 278nm deep ultraviolet LED.But generally speaking, merely by improving material epitaxy growth technique, to improve the potentiality of internal quantum efficiency of AlGaN base deep ultraviolet LED very limited, and therefore how using new principle and new mechanism to improve its internal quantum efficiency has become the previous problem in the urgent need to address of order.
Utility model content
The utility model, in order to solve the low problem of the caused radiation recombination efficiency of high defect concentration in above-mentioned AlGaN base ultraviolet LED, provides a kind of ultraviolet light-emitting diode, improves spontaneous emission rate, thereby improves the internal quantum efficiency of luminescent device.
In order to achieve the above object, the technical solution adopted in the utility model is:
A kind of ultraviolet light-emitting diode, comprising:
Substrate;
AlN intrinsic layer, is formed on described substrate;
N-shaped Al
xga
1-xn layer, is formed on described AlN layer, and described N-shaped Al
xga
1-xn layer has first surface and second surface;
Al
xga
1-xn multiple quantum well layer, is formed on described N-shaped Al
xga
1-xon the first surface of N layer;
P-type Al
xga
1-xn electronic barrier layer, is formed on described Al
xga
1-xon N multiple quantum well layer;
P type GaN layer, is formed on described p-type Al
xga
1-xon N electronic barrier layer;
Nano-metal particle structure, is formed on described P type GaN layer;
Current extending, is formed in described nano-metal particle structure;
P-type electrode, is formed on described current extending;
N-shaped electrode, is formed on described N-shaped Al
xga
1-xon the second surface of N layer;
Flip-chip substrate, by scolder respectively with described p-type electrode and described N-shaped electrode welding.
Further, described substrate is sapphire, carborundum or AlN; The thickness of described AlN intrinsic layer is between 0-10 micron; Described N-shaped Al
xga
1-xthe Al component of N layer is 0-100%, and thickness is 0.1-10 micron; Described Al
xga
1-xthe Al component of N multiple quantum well layer is 0-100%, and thickness is 1-500 nanometer; Described p-type Al
xga
1-xn electronic barrier layer Al component is 0-100%, and thickness is 1-200 nanometer; Described p-type GaN layer thickness is 1-200 nanometer.
Further, the material of described metal nanoparticle structure is Al and alloy material or Ag and alloy material thereof, and the diameter of the metal nanoparticle in described metal nanoparticle structure is 1-500 nanometer.
Further, described current extending is the nonmetal conductive layer that forms ohmic contact with described p-type GaN layer.
Further, described current extending is tin indium oxide, gallium oxide zinc or aluminum zinc oxide.
Compared with prior art scheme, the beneficial effect of the technical solution adopted in the utility model is as follows:
The utility model utilizes the surface phasmon of nano-metal particle structure the luminous enhancement effect of material to be improved to the internal quantum efficiency of AlGaN quantum well in AlGaN base ultraviolet light-emitting diode, has improved the luminous efficiency of ultraviolet light-emitting diode.In the utility model, the structural current extending of nano-metal particle can make the negative effect of the surface phasmon characteristic Bu ShoupXing district metal electrode film of nano-metal particle structure, and can effectively play current expansion effect, reduces operating voltage.
Accompanying drawing explanation
The structural representation of the ultraviolet light-emitting diode that Fig. 1 provides for the utility model embodiment.
Embodiment
Below in conjunction with drawings and Examples, technical solutions of the utility model are described in detail.
The utility model proposes the internal quantum efficiency that utilizes the surface phasmon (Surface Plasmon, SP) of nanometer metal structure the luminous enhancement effect of material to be improved to AlGaN quantum well in AlGaN base deep ultraviolet LED.Metal structure has unique optical characteristics, under optical excitation condition, its conduction band electron can produce surface phasmon by collective oscillation, in the time that approaching a certain characteristic frequency, light frequency can produce resonance, surface phasmon can produce strong absorption and scattering to light, and forms very strong local fields near metal structure surface.This characteristic frequency is called resonance frequency, is determined by factors such as size, shape and the dielectric environments of metal structure.At resonance frequency place, the dispersion curve of surface phasmon changes very mild, is therefore very high in the density of states at resonance frequency place.In the time that the luminescence center of semi-conducting material is in the local fields of surface phasmon, both produce strong coupling, the local fields at luminescence center place is enhanced, the Photon state density of radiation transistion is increased, according to fermic golden rule, the energy of luminescence center with the radiation transistion speed that is exceedingly fast to surface phasmon transferring energy, thereby correspondingly reduced the non-radiative compounding machine meeting at fault in material place.Therefore, in principle, can utilize AlGaN quantum well in surface phasmon and AlGaN base deep ultraviolet LED to be coupled luminous, improve spontaneous emission rate, thereby improve the internal quantum efficiency of luminescent device.
As shown in Figure 1, the utility model embodiment provides a kind of ultraviolet light-emitting diode, comprising: substrate 101, be formed on AlN intrinsic layer 102 on substrate 101, be formed on the N-shaped Al on AlN layer 102
xga
1-xn layer 103, be formed on N-shaped Al
xga
1-xal on the first surface of N layer 103
xga
1-xn multiple quantum well layer 104, be formed on Al
xga
1-xp-type Al on N multiple quantum well layer 104
xga
1-xn electronic barrier layer 105, be formed on p-type Al
xga
1-xp type GaN layer 106 on N electronic barrier layer 105, be formed on nano-metal particle structure 107 on P type GaN layer 106, be formed on current extending 108 in nano-metal particle structure 107, be formed on p-type electrode 109 on current extending 108, be formed on N-shaped Al
xga
1-xn-shaped electrode 110 on the second surface of N layer 103, by scolder 111 respectively with the flip-chip substrate 112 of p-type electrode 109 and N-shaped electrode welding.
Further, substrate 101 is sapphire, carborundum or AlN.The thickness of AlN intrinsic layer 102 is 0-10 micron, and preferably, the thickness of AlN intrinsic layer 102 is 1000nm.N-shaped Al
xga
1-xthe Al component of N layer 103 is 0-100%, and thickness is 0.1-10 micron, preferably, and N-shaped Al
xga
1-xn layer 103 is that thickness is that the Si doping content of 2000nm is 10
20cm
-3al
0.6ga
0.4n layer.Al
xga
1-xthe Al component of N multiple quantum well layer 104 is 0-100%, and thickness is 1-500 nanometer, preferably, and Al
xga
1-xn multiple quantum well layer 104 is Al
0.6ga
0.4n/Al
0.4ga
0.6n multiple quantum well layer, Al
0.6ga
0.4n barrier layer thickness is 10nm, Al
0.4ga
0.6n trap layer thickness is 3nm, and the cycle of quantum well is 10.P-type Al
xga
1-xthe Al component of N electronic barrier layer 105 is 0-100%, and thickness is 1-200 nanometer, preferably, and p-type Al
xga
1-xn electronic barrier layer 105 is that thickness is the p-type Al of 5nm
0.9ga
0.1n electronic barrier layer.P-type GaN layer 106 thickness are 1-200 nanometer, and preferably, p-type GaN layer 106 thickness are 10nm.The thickness summation of p-type AlGaN layer and p-type GaN layer is optimized for 5-30nm.
Further, the material of metal nanoparticle structure 107 is Al and alloy material or Ag and alloy material thereof, and the shape of nano particle is not limit, and the metal nanoparticle diameter in described metal nanoparticle structure is 1-500 nanometer.
Further, current extending 108 is the nonmetal conductive layer that forms ohmic contact with p-type GaN layer 106, and the material of nonmetal conductive layer is the materials such as tin indium oxide, gallium oxide zinc or aluminum zinc oxide.The thickness of current extending does not limit, but is optimized for 50-1000nm nanometer.
The preparation method of a kind of ultraviolet light-emitting diode that the utility model embodiment provides, specifically comprises the steps:
(1) on substrate, growing AIN intrinsic layer;
Particularly, in Sapphire Substrate, utilize MOCVD technique, underlayer temperature is reduced to 600 ℃, the low temperature AI N nucleating layer that growth thickness is 20nm, is then elevated to growth temperature 1300 ℃, the AlN intrinsic layer that growth thickness is 1000nm.
(2) on AlN intrinsic layer, growing n-type Al
xga
1-xn layer;
Particularly, on AlN intrinsic layer, make growth temperature remain on 1150 ℃, the Si doping content that growth thickness is 2000nm is 1 × 10
20cm
-3n-shaped Al
0.6ga
0.4n layer.
(3) at N-shaped Al
xga
1-xon N layer, growth Al
xga
1-xn multiple quantum well layer;
Particularly, at N-shaped Al
0.6ga
0.4on N layer, growth temperature remains on 1150 ℃, growth Al
0.6ga
0.4n/Al
0.4ga
0.6n multiple quantum well layer, Al
0.6ga
0.4n barrier layer thickness is 10nm, Al
0.4ga
0.6n trap layer thickness is 3nm, and the cycle of quantum well is 10.
(4) at Al
xga
1-xon N multiple quantum well layer, growing p-type Al
xga
1-xn electronic barrier layer;
Particularly, growth temperature remains on 1150 ℃, at Al
0.6ga
0.4n/Al
0.4ga
0.6on N multiple quantum well layer, the thick p-type Al of growth 5nm
0.9ga
0.1n electronic barrier layer.
(5) at p-type Al
xga
1-xon N electronic barrier layer, growing p-type GaN layer, obtains ultraviolet light-emitting diode epitaxial wafer;
Particularly, growth temperature remains on 1150 ℃, at p-type Al
0.9ga
0.1the p-type GaN layer that on N electronic barrier layer, growth thickness is 10nm.
(6) on ultraviolet light-emitting diode epitaxial wafer, prepare nano-metal particle structure;
Particularly, steps A: use measure-alike diameter at the polystyrene spheres of 500 nanometers as nano-colloid ball, by spin-coating method, on ultraviolet light-emitting diode epitaxial wafer, utilize " self assembly effect " to make the nanosphere array being arranged in six side's closest packing forms;
Step B: nanosphere array is covered to plate as deposition, deposit the Al metallic film of 60 nanometer thickness by electron beam evaporation, fill the space between nano-colloid ball; In the present embodiment, the material of metallic film can also be alloy material, Ag and the alloy material thereof of Al;
Step C: again by stripping technology, such as the mode of heating anneal, remove nano-colloid ball, just can leave the nano-metal particle structure of nearly triangle on ultraviolet light-emitting diode epitaxial wafer surface; Passing through persistently overheating thermal annealing, is circular nanoparticle by leg-of-mutton nano-metal particle Structure Transformation again.
(7) deposition current extension layer in nano-metal particle structure;
Particularly, adopt electron beam evaporation process, in Al nano-metal particle structure, deposit the ITO current extending that 200nm is thick.
(8) described in etching ultraviolet light-emitting diode epitaxial wafer to N-shaped Al
xga
1-xn layer, forms N-shaped Al
xga
1-xn layer table top;
Particularly, on ultraviolet light-emitting diode epitaxial wafer, make N-shaped district table top pattern by lithography, then erode with Al nanopowders structure and ITO current extending on BOE etchant solution JiangnXing district table top pattern, then adopt ICP technique etching ultraviolet light-emitting diode epitaxial wafer to N-shaped Al
xga
1-xn layer, forms N-shaped Al
xga
1-xn table top.
(9) at N-shaped Al
xga
1-xon N layer table top, make the figure of N-shaped electrode by lithography, then form N-shaped electrode at N-shaped electrode pattern district plated metal;
Particularly, at N-shaped Al
xga
1-xon N layer table top, make the figure of N-shaped electrode by lithography, adopt electron beam evaporation process, evaporate successively Ti that thickness is 100 nanometers and thickness in electrode pattern district and be the Al double layer of metal of 1 micron, then ultraviolet light-emitting diode epitaxial wafer is put in quick anneal oven and formed N-shaped electrode in short annealing.
(10) on current extending, make the figure of p-type electrode by lithography, then, at p-type electrode pattern district deposition p-type electrode, obtain UV LED chips.
(11) UV LED chips upside-down mounting is soldered on flip-chip substrate, obtains ultraviolet light-emitting diode;
Particularly, in UV LED chips, deposit silicon dioxide or the silicon nitride passivation of 200 nano thickness with PECVD, on described silicon passivation layer, make Flip-chip solder joint metal deposition pattern by lithography; Etch away the silicon dioxide passivation layer on solder joint metal deposition pattern region by RIE technique, on solder joint metal deposition pattern region, use again the AuSn scolder of thermal evaporation process deposits 2 micron thickness, and UV LED chips upside-down mounting is soldered on flip-chip substrate, obtain ultraviolet light-emitting diode.
The utility model compared with prior art tool has the following advantages:
(1) the nano-metal particle structure in the utility model can with AlGaN base ultraviolet LED in AlGaN quantum well be coupled luminous, make electron hole pair in quantum well with the radiation transistion speed that is exceedingly fast to surface phasmon transferring energy, thereby reduce the non-radiative compounding machine meeting of electron hole pair at fault in material place, improved the luminous efficiency of ultraviolet LED.
(2) nano-metal particle structure adopts Nanosphere lithography technique preparation, the characteristic of this method maximum is just that required instrument and equipment is quite cheap, and technique easily operates, only need to change the particle diameter of different nano particle balls, just can on various substrates, obtain the large-area nano metallic particles periodic array structure of different nano-scales, can in than relative broad range, regulate and control resonant wavelength, be applicable to multiple wave band ultraviolet LED application, be suitable for large-scale industrialization and manufacture use.
(3) in nano-metal particle structure, there is one deck conductive non-metals film as p-type district ohmic contact material and current extending.Conductive non-metals film can make the negative effect of the surface phasmon characteristic Bu ShoupXing district metal electrode film of nano-metal particle, and can effectively play current expansion effect, reduces operating voltage.
The above is most preferred embodiment of the present utility model, is not limited to the utility model, and for a person skilled in the art, the utility model can have various modifications and variations.All within spirit of the present utility model and principle, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.
Claims (10)
1. a ultraviolet light-emitting diode, is characterized in that, comprising:
Substrate;
AlN intrinsic layer, is formed on described substrate;
N-shaped Al
xga
1-xn layer, is formed on described AlN layer, and described N-shaped Al
xga
1-xn layer has first surface and second surface;
Al
xga
1-xn multiple quantum well layer, is formed on described N-shaped Al
xga
1-xon the first surface of N layer;
P-type Al
xga
1-xn electronic barrier layer, is formed on described Al
xga
1-xon N multiple quantum well layer;
P type GaN layer, is formed on described p-type Al
xga
1-xon N electronic barrier layer;
Nano-metal particle structure, is formed on described P type GaN layer;
Current extending, is formed in described nano-metal particle structure;
P-type electrode, is formed on described current extending;
N-shaped electrode, is formed on described N-shaped Al
xga
1-xon the second surface of N layer;
Flip-chip substrate, by scolder respectively with described p-type electrode and described N-shaped electrode welding.
2. ultraviolet light-emitting diode as claimed in claim 1, is characterized in that, described substrate is sapphire, carborundum or AlN.
3. ultraviolet light-emitting diode as claimed in claim 1, is characterized in that, the thickness of described AlN intrinsic layer is between 0-10 micron.
4. ultraviolet light-emitting diode as claimed in claim 1, is characterized in that, described N-shaped Al
xga
1-xthe thickness of N layer is 0.1-10 micron.
5. ultraviolet light-emitting diode as claimed in claim 1, is characterized in that, described Al
xga
1-xthe thickness of N multiple quantum well layer is 1-500 nanometer.
6. ultraviolet light-emitting diode as claimed in claim 1, is characterized in that, described p-type Al
xga
1-xthe thickness of N electronic barrier layer is 1-200 nanometer.
7. ultraviolet light-emitting diode as claimed in claim 1, is characterized in that, described p-type GaN layer thickness is 1-200 nanometer.
8. ultraviolet light-emitting diode as claimed in claim 1, is characterized in that, the metal nanoparticle diameter in described metal nanoparticle structure is 1-500 nanometer.
9. ultraviolet light-emitting diode as claimed in claim 1, is characterized in that, described current extending is the nonmetal conductive layer that forms ohmic contact with described p-type GaN layer.
10. ultraviolet light-emitting diode as claimed in claim 9, is characterized in that, described current extending is tin indium oxide, gallium oxide zinc or aluminum zinc oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320641628.0U CN203596359U (en) | 2013-10-17 | 2013-10-17 | UV light emitting diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320641628.0U CN203596359U (en) | 2013-10-17 | 2013-10-17 | UV light emitting diode |
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| Publication Number | Publication Date |
|---|---|
| CN203596359U true CN203596359U (en) | 2014-05-14 |
Family
ID=50677221
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|---|---|---|---|
| CN201320641628.0U Expired - Lifetime CN203596359U (en) | 2013-10-17 | 2013-10-17 | UV light emitting diode |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681996A (en) * | 2013-10-17 | 2014-03-26 | 武汉光电工业技术研究院有限公司 | UV (Ultraviolet) LED and preparation method thereof |
| CN105355736A (en) * | 2015-11-12 | 2016-02-24 | 东南大学 | UV-LED with quantum dot p-region structure |
| CN113594310A (en) * | 2021-06-11 | 2021-11-02 | 厦门士兰明镓化合物半导体有限公司 | Deep ultraviolet LED chip and manufacturing method thereof |
-
2013
- 2013-10-17 CN CN201320641628.0U patent/CN203596359U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681996A (en) * | 2013-10-17 | 2014-03-26 | 武汉光电工业技术研究院有限公司 | UV (Ultraviolet) LED and preparation method thereof |
| CN105355736A (en) * | 2015-11-12 | 2016-02-24 | 东南大学 | UV-LED with quantum dot p-region structure |
| CN105355736B (en) * | 2015-11-12 | 2017-11-07 | 东南大学 | A kind of UV LED with quantum dot p plot structures |
| CN113594310A (en) * | 2021-06-11 | 2021-11-02 | 厦门士兰明镓化合物半导体有限公司 | Deep ultraviolet LED chip and manufacturing method thereof |
| CN113594310B (en) * | 2021-06-11 | 2023-09-08 | 厦门士兰明镓化合物半导体有限公司 | Deep ultraviolet LED chip and manufacturing method thereof |
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Effective date of registration: 20160321 Address after: 430075 East Lake hi tech Development Zone, Hubei, Wuhan, No. 999, hi tech Avenue, C2, future science and Technology City Patentee after: WUHAN UV LEDTEK CO., LTD. Address before: 430075 Wuhan Province, East Lake New Technology Development Zone, high tech Avenue, No. 999, No. Patentee before: WUHAN INDUSTRIAL INSTITUTE FOR OPTOELECTRONICS CO., LTD. |