WO2022267446A1 - Dispositif électroluminescent à semi-conducteurs en alingan - Google Patents
Dispositif électroluminescent à semi-conducteurs en alingan Download PDFInfo
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- WO2022267446A1 WO2022267446A1 PCT/CN2022/070606 CN2022070606W WO2022267446A1 WO 2022267446 A1 WO2022267446 A1 WO 2022267446A1 CN 2022070606 W CN2022070606 W CN 2022070606W WO 2022267446 A1 WO2022267446 A1 WO 2022267446A1
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- WIPO (PCT)
- Prior art keywords
- layer
- type
- alingan
- semiconductor
- thickness
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 134
- 239000010410 layer Substances 0.000 claims abstract description 287
- 230000005525 hole transport Effects 0.000 claims abstract description 51
- 239000000463 material Substances 0.000 claims abstract description 34
- 230000000903 blocking effect Effects 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000002356 single layer Substances 0.000 claims abstract description 10
- 230000004888 barrier function Effects 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 230000006798 recombination Effects 0.000 abstract description 6
- 238000005215 recombination Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 6
- 229910001020 Au alloy Inorganic materials 0.000 description 5
- 229910000990 Ni alloy Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 238000004659 sterilization and disinfection Methods 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 230000001954 sterilising effect Effects 0.000 description 3
- 241000282414 Homo sapiens Species 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
La présente invention se rapporte à un dispositif électroluminescent à semi-conducteurs en AlInGaN. Le dispositif électroluminescent à semi-conducteurs en AlInGaN comprend : un substrat, une couche tampon semi-conductrice, une première couche semi-conductrice de type N, une seconde couche semi-conductrice de type N, une couche de puits quantiques multiples, une couche de transport de trous de type P, une couche de blocage d'électrons de type P, une couche de transport semi-conductrice de type P et une couche de contact semi-conductrice de type P. Dans le dispositif électroluminescent à semi-conducteurs en AlInGaN selon la présente invention, au moyen de l'agencement de la couche de transport de trous de type P en tant que couche de matériau en AlInGaN monocouche ou couche de structure de super-réseau en AlInGaN/AlInGaN, le taux de production de trous à proximité des puits quantiques peut être augmenté, de sorte qu'une grande quantité de trous sont fournis en continu aux puits quantiques afin d'améliorer l'efficacité de recombinaison électron-trou dans les puits quantiques en AlInGaN, améliorant la performance de la diode électroluminescente en AlInGaN.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110707146.XA CN113257965B (zh) | 2021-06-25 | 2021-06-25 | 一种AlInGaN半导体发光器件 |
| CN202110707146.X | 2021-06-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2022267446A1 true WO2022267446A1 (fr) | 2022-12-29 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2022/070606 WO2022267446A1 (fr) | 2021-06-25 | 2022-01-07 | Dispositif électroluminescent à semi-conducteurs en alingan |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113257965B (fr) |
| WO (1) | WO2022267446A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116705942A (zh) * | 2023-08-08 | 2023-09-05 | 江西兆驰半导体有限公司 | 发光二极管及其制备方法 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113257965B (zh) * | 2021-06-25 | 2021-10-29 | 至芯半导体(杭州)有限公司 | 一种AlInGaN半导体发光器件 |
| CN114068741B (zh) * | 2022-01-17 | 2022-04-19 | 至善时代智能科技(北京)有限公司 | 一种紫外探测器芯片 |
| CN115347097B (zh) * | 2022-10-18 | 2023-03-14 | 江西兆驰半导体有限公司 | 发光二极管外延片及其制备方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107230738A (zh) * | 2017-07-31 | 2017-10-03 | 河北工业大学 | 具有超晶格隧穿结的发光二极管外延结构及其制备方法 |
| CN107275450A (zh) * | 2017-07-21 | 2017-10-20 | 广东工业大学 | 一种紫外led外延结构 |
| CN110600591A (zh) * | 2019-08-21 | 2019-12-20 | 苏州紫灿科技有限公司 | 具有啁啾超晶格最终势垒结构的深紫外led及制备方法 |
| CN110752279A (zh) * | 2019-12-02 | 2020-02-04 | 广东省半导体产业技术研究院 | 一种具有超薄铝铟氮插入层的紫外发光二极管及其制备方法 |
| CN112242464A (zh) * | 2020-09-29 | 2021-01-19 | 苏州紫灿科技有限公司 | 一种具有空穴蓄积结构的深紫外led及其制备方法 |
| CN113257965A (zh) * | 2021-06-25 | 2021-08-13 | 至芯半导体(杭州)有限公司 | 一种AlInGaN半导体发光器件 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI499080B (zh) * | 2012-11-19 | 2015-09-01 | Genesis Photonics Inc | 氮化物半導體結構及半導體發光元件 |
| KR102264671B1 (ko) * | 2014-09-30 | 2021-06-15 | 서울바이오시스 주식회사 | 자외선 발광소자 |
| CN106098880B (zh) * | 2016-06-23 | 2018-08-07 | 孙月静 | 一种p区结构的紫外发光二极管 |
| CN111341892B (zh) * | 2020-03-17 | 2021-11-02 | 厦门乾照半导体科技有限公司 | 一种led外延结构及其制作方法、led芯片 |
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2021
- 2021-06-25 CN CN202110707146.XA patent/CN113257965B/zh active Active
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2022
- 2022-01-07 WO PCT/CN2022/070606 patent/WO2022267446A1/fr unknown
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107275450A (zh) * | 2017-07-21 | 2017-10-20 | 广东工业大学 | 一种紫外led外延结构 |
| CN107230738A (zh) * | 2017-07-31 | 2017-10-03 | 河北工业大学 | 具有超晶格隧穿结的发光二极管外延结构及其制备方法 |
| CN110600591A (zh) * | 2019-08-21 | 2019-12-20 | 苏州紫灿科技有限公司 | 具有啁啾超晶格最终势垒结构的深紫外led及制备方法 |
| CN110752279A (zh) * | 2019-12-02 | 2020-02-04 | 广东省半导体产业技术研究院 | 一种具有超薄铝铟氮插入层的紫外发光二极管及其制备方法 |
| CN112242464A (zh) * | 2020-09-29 | 2021-01-19 | 苏州紫灿科技有限公司 | 一种具有空穴蓄积结构的深紫外led及其制备方法 |
| CN113257965A (zh) * | 2021-06-25 | 2021-08-13 | 至芯半导体(杭州)有限公司 | 一种AlInGaN半导体发光器件 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116705942A (zh) * | 2023-08-08 | 2023-09-05 | 江西兆驰半导体有限公司 | 发光二极管及其制备方法 |
| CN116705942B (zh) * | 2023-08-08 | 2023-10-17 | 江西兆驰半导体有限公司 | 发光二极管及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113257965B (zh) | 2021-10-29 |
| CN113257965A (zh) | 2021-08-13 |
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