CN114242861A - Quantum well light emitting layer structure, growth method and epitaxial wafer - Google Patents

Quantum well light emitting layer structure, growth method and epitaxial wafer Download PDF

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CN114242861A
CN114242861A CN202111534813.5A CN202111534813A CN114242861A CN 114242861 A CN114242861 A CN 114242861A CN 202111534813 A CN202111534813 A CN 202111534813A CN 114242861 A CN114242861 A CN 114242861A
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growth
quantum well
layer
quantum barrier
barrier layer
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CN114242861B (en
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闫其昂
王国斌
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Jiangsu Third Generation Semiconductor Research Institute Co Ltd
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Jiangsu Third Generation Semiconductor Research Institute Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Abstract

The invention discloses a growth method of a quantum well light-emitting layer structure, which comprises the following steps: s1, growing an InGaN quantum well layer on the substrate with the n-type epitaxial layer; s2, growing a GaN quantum barrier layer on the InGaN quantum well layer; s3, alternately repeating S1 and S2 to form InGaN quantum well layers and GaN quantum barrier layers which alternately grow periodically; s4, growing GaN quantum barrier layers on the last InGaN quantum well layer in N continuous time periods; the growth temperature of the GaN quantum barrier layer in the later time period is less than or equal to the growth temperature of the GaN quantum barrier layer in the adjacent previous time period; in the time period of doping In during the growth of each GaN quantum barrier layer, the flow rate of an In source is linearly reduced along with time. According to the invention, the last GaN quantum barrier layer grows In a segmented manner, and the In-doped component is gradually changed, so that the injection of a p-type layer hole into the quantum well light-emitting layer is promoted, the activation effect In the last quantum well layer is reduced, the overlapping of electrons and holes is improved, the light-emitting efficiency of the quantum well is improved, and the drop effect under high current is improved.

Description

Quantum well light emitting layer structure, growth method and epitaxial wafer
Technical Field
The invention relates to the technical field of quantum well light-emitting layers, in particular to a quantum well light-emitting layer structure, a growth method thereof and an epitaxial wafer.
Background
Quantum confinement effects cause discrete energy levels to form in the quantum well. In a double barrier quantum well structure, resonant tunneling can only occur when the energy of the emitter electrons is equal to the energy level in the quantum well and the lateral momentum is conserved. And further increasing the electric field to make the discrete energy level of the quantum well lower than the band edge of the emitter, the tunneling current is sharply reduced, and the phenomenon of negative differential resistance appears, which is the basic principle of a Resonant Tunnel Diode (RTD).
The excitons in the quantum well also move in quasi-two dimensions. Due to the quantum confinement effect, the two-dimensional excitons in the quantum well, whose binding energy is close to 4 times the exciton binding energy of the semiconductor material, make it possible to observe a strong absorption peak or a strong fluorescence peak caused by the exciton effect at room temperature. The characteristics, together with the two-dimensional characteristics of the state density in the quantum well and various regulation and control means of energy band engineering, can reduce the threshold current of the quantum well laser, adjust the emission wavelength, improve the differential gain, improve the characteristic temperature and other properties. Semiconductor quantum wells have also found wide application in other optoelectronic devices.
Group II1-V compound semiconductors represented by GaN are widely used in the fields of wireless communication, optical communication, lasers, power electronics, and military electronics because of their excellent characteristics such as high frequency, high speed, high power, high temperature resistance, radiation protection, and photoelectric properties.
The GaN-based light emitting device usually adopts InGaN/GaN quantum wells as a light emitting layer, a high Al component p-type AlGaN electron blocking layer blocks overflow of electrons, but with rising of Al components, ionization energy of Mg is rapidly increased and crystal quality is remarkably reduced, so that hole ionization efficiency and concentration are rapidly reduced, further hole injection efficiency is reduced, light emitting efficiency is reduced, and under the condition of high-current injection, the problems of efficiency dip effect, aging, light decay and the like are further aggravated, so that the capability of injecting holes into the quantum well light emitting layer needs to be further improved. At present, a new quantum well light emitting layer structure is urgently needed to solve the above problems.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a method for growing a quantum well light-emitting layer structure, which can greatly promote the injection of p-type layer holes into a quantum well light-emitting layer, reduce the activation effect in the last light-emitting well layer, improve the overlapping of electrons and holes, improve the light-emitting efficiency of a quantum well and improve the drop effect under high current.
In order to solve the above problems, the present invention provides a method for growing a quantum well light emitting layer structure, including the steps of:
s1, growing an InGaN quantum well layer on the substrate with the n-type epitaxial layer;
s2, growing a GaN quantum barrier layer on the InGaN quantum well layer;
s3, alternately repeating S1 and S2 to form InGaN quantum well layers and GaN quantum barrier layers which alternately grow periodically;
s4, growing a last InGaN quantum well layer on the InGaN quantum well layer and the GaN quantum barrier layer which alternately grow periodically;
s5, growing GaN quantum barrier layers on the last InGaN quantum well layer in N continuous time periods; the growth temperature of the GaN quantum barrier layer in the next time period is less than or equal to the growth temperature of the GaN quantum barrier layer in the adjacent previous time period; in is doped during the growth of the GaN quantum barrier layers In the first n time periods, and the flow of an In source is linearly reduced along with time during the time period of In doping during the growth of each GaN quantum barrier layer; wherein N is more than or equal to 2, and N is more than or equal to 1.
As a further improvement of the present invention, In step S5, the rate at which the In source flow decreases gradually decreases In different periods of time during which the GaN quantum barrier layer is doped with In during growth.
As a further improvement of the invention, In each time period of In doping during the growth of the GaN quantum barrier layer, the tail end flow of the In source during the growth of the GaN quantum barrier layer is the initial flow of the In source during the growth of the GaN quantum barrier layer In the next adjacent time period.
As a further improvement of the present invention, In step S4, the In source flow rate doped with In during growth of the last InGaN quantum well layer is f; in step S5, the initial flow rate of the In-doped In source during the growth of the GaN quantum barrier layer In the first time period is f1, and the end flow rate is f2, which satisfies the following conditions: f is more than or equal to f1 and more than f 2.
As a further improvement of the present invention, N is N-1, the end flow rate of the In source In the In doping period during the growth of the GaN quantum barrier layer In the nth period is 0, and the flow rate of the In source for the growth of the GaN quantum barrier layer In the nth period is 0.
As a further improvement of the present invention, N is N-1, the flow rate of the end of the In source is 0 In the period of doping In during the growth of the GaN quantum barrier layer In the nth period, and Al is doped during the growth of the GaN quantum barrier layer In the nth period.
As a further improvement of the present invention, N is N, and the In source end flow rate when the GaN quantum barrier layer is grown In the nth period is 0.
As a further improvement of the present invention, when N is 3, the times corresponding to three consecutive periods of time are t respectively1、t2And t3The growth time of each GaN quantum barrier layer in the InGaN quantum well layer and the GaN quantum barrier layer which alternately grow is t, and the following requirements are met: t is t1+t2+t3＝t，t/4≤t1<t，t/4≤t2<t，0<t3≤t/2。
In order to solve the above problems, the present invention further provides a quantum well light emitting layer structure, which is grown by using any one of the above growth methods of the quantum well light emitting layer structure.
In order to solve the above problems, the present invention also provides an epitaxial wafer including the above quantum well light emitting layer structure.
The invention has the beneficial effects that:
according to the method for growing the quantum well light-emitting layer structure, the last GaN quantum barrier layer In the light-emitting layer grows In a segmented mode, In-doped components are gradually changed, on one hand, the injection of a p-type layer hole into the quantum well light-emitting layer is greatly promoted, on the other hand, the activation effect In the last quantum well layer is reduced, the overlapping of electrons and holes is improved, the light-emitting efficiency of a quantum well is improved, the drop effect under high current is improved, and compared with the traditional GaN quantum barrier structure, the photoelectric performance of a light-emitting device is improved.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are described in detail with reference to the accompanying drawings.
Drawings
FIG. 1 is a block diagram of a quantum well light emitting layer structure in an embodiment of the invention;
fig. 2 is a schematic diagram of growing GaN quantum barrier layers in three consecutive time periods in the embodiment of the present invention.
Detailed Description
The present invention is further described below in conjunction with the following figures and specific examples so that those skilled in the art may better understand the present invention and practice it, but the examples are not intended to limit the present invention.
Example one
The embodiment discloses a growth method of a quantum well light-emitting layer structure, which comprises the following steps:
s1, growing an InGaN quantum well layer on the substrate with the n-type epitaxial layer; specifically, an InGaN quantum well layer with the thickness of 3nm is grown on a substrate with an N-type epitaxial layer under the conditions that the growth temperature is 850 ℃ and the growth pressure is 300mbar, the growth time is 150s, the needed Ga source is TEGa, the flow rate is set to be 55sccm, the In source is TMIn, the flow rate is set to be 900sccm, and the growth atmosphere is N2. In some embodiments, the growth temperature of the InGaN quantum well layer may be 700-900 ℃, the growth pressure may be 200-400mbar, and the growth thickness may be 2-6 nm.
S2, growing a GaN quantum barrier layer on the InGaN quantum well layer; specifically, on an InGaN quantum well layer, a GaN quantum barrier layer with the thickness of 11nm is grown under the conditions that the growth temperature is 950 ℃ and the growth pressure is 400mbar, the growth time is 195s, the required Ga source is TEGa, the flow rate is set to 345sccm, and the growth atmosphere is H2. In some embodiments, the growth temperature of the GaN quantum barrier layer may be 750-.
S3, alternately repeating S1 and S2 to form InGaN quantum well layers and GaN quantum barrier layers which alternately grow periodically; specifically, the number of cycles was 8. In other embodiments, the number of cycles may be set as desired, and is not particularly limited.
S4, growing a last InGaN quantum well layer on the InGaN quantum well layer and the GaN quantum barrier layer which alternately grow periodically; specifically, an InGaN quantum well layer with the thickness of 3nm is grown at the growth temperature of 850 ℃ under the growth pressure of 300mbar, the growth time is 150s, the needed Ga source is TEGa, the flow rate is set to be 55sccm, the In source is TMIn, the flow rate is set to be 900sccm, and the growth atmosphere is N2. In some embodiments, the growth temperature of the InGaN quantum well layer may be 700-900 ℃, the growth pressure may be 200-400mbar, and the growth thickness may be 2-6 nm.
S5, growing GaN quantum barrier layers on the last InGaN quantum well layer in N continuous time periods; the growth temperature of the GaN quantum barrier layer in the next time period is less than or equal to the growth temperature of the GaN quantum barrier layer in the adjacent previous time period; in is doped when the GaN quantum barrier layers grow In the first n time periods, and In source flow is linearly reduced along with time In the time period of In doping when each GaN quantum barrier layer grows; wherein N is more than or equal to 2, and N is more than or equal to 1. In this embodiment, N is 3, N is N-1, and step S5 specifically includes:
s51, In the first time period, the growth temperature is 950 ℃, the growth pressure is 400mbar, the growth time is 50S, the needed Ga source is TEGa, the flow rate is set to 345sccm, the In source is TMIn, the flow rate is set to 900sccm and is reduced to 400sccm, the growth atmosphere is N2；
S52, setting the In source flow of 400sccm to be reduced to 0 and the growth time to be 50S under the condition that other conditions In the first time period are not changed;
and S53, in the third time period, under the condition that other conditions in the first time period are not changed, the TMIn source is closed, and the growth time is 95S.
Further, In different time periods of In doping during the growth of the GaN quantum barrier layer, the rate of reduction of the In source flow is gradually reduced. The growth quality of the GaN quantum barrier layer is further improved, and the activation effect in the last quantum well layer is further reduced.
Further, In the time period of In doping during the growth of each GaN quantum barrier layer, the tail end flow of the In source during the growth of the GaN quantum barrier layer is the initial flow of the In source during the growth of the GaN quantum barrier layer In the next adjacent time period. The gradual change and the continuity of the In-doped component are ensured, the growth quality of the GaN quantum barrier layer is ensured, the gradient of a carrier injection barrier of the GaN quantum barrier is improved, and the carrier injection efficiency is improved.
In this embodiment, the time corresponding to three consecutive time periods is t1、t2And t3The growth time of each GaN quantum barrier layer in the InGaN quantum well layer and the GaN quantum barrier layer which alternately grow is t, preferably, the following conditions are met: t is t1+t2+t3＝t，t/4≤t1<t，t/4≤t2<t，0<t3T/2 is less than or equal to. In other embodiments, the number of N may be set according to needs, and is not limited specifically.
Further, the growth temperature of each GaN quantum barrier layer in the InGaN quantum well layer and the GaN quantum barrier layer which alternately grow is T, the growth temperature of the GaN quantum barrier layer in three continuous time periods is T1, T2 and T3 respectively, and the following conditions are met: t is more than or equal to T1 and more than or equal to T2 and more than or equal to T3 and more than or equal to T-60 ℃. The growth temperature difference is ensured within a reasonable interval so as to ensure the growth quality.
Further, In step S4, the In source flow rate doped with In during growth of the last InGaN quantum well layer is f; in step S5, the initial flow rate of the In-doped In source during the growth of the GaN quantum barrier layer In the first time period is f1, and the end flow rate is f2, which satisfies the following conditions: f is more than or equal to f1 and more than f 2. Ensure the continuity and the gradual change of the doped In.
Optionally, the cycle number of the InGaN quantum well layer and the GaN quantum barrier layer which are alternately grown is 1-20, the thickness of the InGaN quantum well layer is 2-5nm, and the thickness of the GaN quantum barrier is 3-20 nm. In some embodiments, the number of cycle periods of the InGaN quantum well layer and the GaN quantum barrier layer which are alternately grown, the thickness of the InGaN quantum well layer, and the thickness of the GaN quantum barrier are not limited, and may be set as required.
According to the quantum well light-emitting layer structure, the last GaN quantum barrier layer In the light-emitting layer grows In a segmented mode, In-doped components are gradually changed, on one hand, the injection of p-type layer holes into the quantum well light-emitting layer is greatly promoted, on the other hand, the activation effect In the last quantum well layer is reduced, the overlapping of electrons and holes is improved, the light-emitting efficiency of a quantum well is improved, the drop effect under high current is improved, and compared with the traditional GaN quantum barrier structure, the photoelectric performance of a light-emitting device is improved.
Example two
The embodiment discloses a growth method of a quantum well light-emitting layer structure, which comprises the following steps:
s1, growing an InGaN quantum well layer on the substrate with the n-type epitaxial layer; specifically, an InGaN quantum well layer with the thickness of 3nm is grown on a substrate with an N-type epitaxial layer under the conditions that the growth temperature is 850 ℃ and the growth pressure is 300mbar, the growth time is 150s, the needed Ga source is TEGa, the flow rate is set to be 55sccm, the In source is TMIn, the flow rate is set to be 900sccm, and the growth atmosphere is N2。
S2, growing a GaN quantum barrier layer on the InGaN quantum well layer; specifically, on an InGaN quantum well layer, a GaN quantum barrier layer with the thickness of 11nm is grown under the conditions that the growth temperature is 950 ℃ and the growth pressure is 400mbar, the growth time is 195s, the required Ga source is TEGa, the flow rate is set to 345sccm, and the growth atmosphere is H2。
S3, alternately repeating S1 and S2 to form InGaN quantum well layers and GaN quantum barrier layers which alternately grow periodically; specifically, the number of cycles was 8. In other embodiments, the number of cycles may be set as desired, and is not particularly limited.
S4, growing a last InGaN quantum well layer on the InGaN quantum well layer and the GaN quantum barrier layer which alternately grow periodically;
s5, growing GaN quantum barrier layers on the last InGaN quantum well layer in N continuous time periods; the growth temperature of the GaN quantum barrier layer in the next time period is less than or equal to the growth temperature of the GaN quantum barrier layer in the adjacent previous time period; in is doped when the GaN quantum barrier layers grow In the first n time periods, and In source flow is linearly reduced along with time In the time period of In doping when each GaN quantum barrier layer grows; wherein N is more than or equal to 2, and N is more than or equal to 1. In this embodiment, N is 3, N is N-1, and step S5 specifically includes:
s51, the first time period, the growth temperature is 950 ℃, and the growth pressure isUnder the condition of 400mbar, the growth time is 65s, the required Ga source is TEGa, the flow rate is set to be 345sccm, the In source is TMIn, the flow rate is set to be 900sccm and is reduced to be 400sccm, and the growth atmosphere is N2；
S52, setting the In source flow of 400sccm to be reduced to 0 and the growth time of 65S under the condition that other conditions In the first time period are not changed;
and S53, in a third time period, under the condition that other conditions in the first time period are not changed, closing the TMIn source, opening the TMAl source, setting the flow of the Al source to be 30sccm, and growing for 65S. In other embodiments, the Al source flow may be set as desired, and is not particularly limited.
In other embodiments, the In source flow rate In the first time period and the first time period can be set according to the requirement, for example, the In source flow rate can be decreased from 900sccm to 450sccm, and then decreased from 450sccm to 0, which is not limited In particular.
In other embodiments, the growth time, growth temperature, and growth pressure of each time period may be set as needed, and are not particularly limited.
EXAMPLE III
The embodiment discloses a growth method of a quantum well light-emitting layer structure, which comprises the following steps:
s1, growing an InGaN quantum well layer on the substrate with the n-type epitaxial layer; specifically, an InGaN quantum well layer with the thickness of 3nm is grown on a substrate with an N-type epitaxial layer under the conditions that the growth temperature is 850 ℃ and the growth pressure is 300mbar, the growth time is 150s, the needed Ga source is TEGa, the flow rate is set to be 55sccm, the In source is TMIn, the flow rate is set to be 900sccm, and the growth atmosphere is N2。
S2, growing a GaN quantum barrier layer on the InGaN quantum well layer; specifically, on the GaN quantum barrier layer, the GaN quantum barrier layer with the thickness of 11nm is grown under the conditions that the growth temperature is 950 ℃ and the growth pressure is 400mbar, the growth time is 195s, the required Ga source is TEGa, the flow rate is set to 345sccm, and the growth atmosphere is H2。
S3, alternately repeating S1 and S2 to form InGaN quantum well layers and GaN quantum barrier layers which alternately grow periodically; specifically, the number of cycles was 8. In other embodiments, the number of cycles may be set as desired, and is not particularly limited.
And S4, growing the last InGaN quantum well layer on the InGaN quantum well layer and the GaN quantum barrier layer which are alternately grown periodically.
S5, growing GaN quantum barrier layers on the last InGaN quantum well layer in N continuous time periods; the growth temperature of the GaN quantum barrier layer in the next time period is less than or equal to the growth temperature of the GaN quantum barrier layer in the adjacent previous time period; in is doped when the GaN quantum barrier layers grow In the first n time periods, and In source flow is linearly reduced along with time In the time period of In doping when each GaN quantum barrier layer grows; wherein N is more than or equal to 2, and N is more than or equal to 1. Referring to fig. 2, in this embodiment, N is 3, N is N, and step S5 specifically includes:
s51, In the first time period, the growth temperature is 950 ℃, the growth pressure is 400mbar, the growth time is 65S, the needed Ga source is TEGa, the flow rate is set to 345sccm, the In source is TMIn, the flow rate is set to 900sccm and is reduced to 400sccm, the growth atmosphere is N2；
S52, setting the In source flow of 400sccm to be reduced to 100sccm for a second time period under the condition that other conditions In the first time period are not changed, and growing for 65S;
s53, setting the In source flow of 100sccm to be reduced to 0 and growing for 65S under the condition that other conditions In the second time period are not changed.
Example four
The embodiment discloses a growth method of a quantum well light-emitting layer structure, which comprises the following steps:
s1, growing an InGaN quantum well layer on the substrate with the n-type epitaxial layer; specifically, an InGaN quantum well layer with the thickness of 3nm is grown on a substrate with an N-type epitaxial layer under the conditions that the growth temperature is 850 ℃ and the growth pressure is 300mbar, the growth time is 150s, the needed Ga source is TEGa, the flow rate is set to be 55sccm, the In source is TMIn, the flow rate is set to be 900sccm, and the growth atmosphere is N2. In some embodimentsThe growth temperature of the InGaN quantum well layer can be 700-900 ℃, the growth pressure can be 200-400mbar, and the growth thickness can be 2-6 nm.
S2, growing a GaN quantum barrier layer on the InGaN quantum well layer; specifically, on an InGaN quantum well layer, a GaN quantum barrier layer with the thickness of 11nm is grown under the conditions that the growth temperature is 950 ℃ and the growth pressure is 400mbar, the growth time is 195s, the required Ga source is TEGa, the flow rate is set to 345sccm, and the growth atmosphere is H2. In some embodiments, the growth temperature of the GaN quantum barrier layer may be 750-.
S3, alternately repeating S1 and S2 to form InGaN quantum well layers and GaN quantum barrier layers which alternately grow periodically; specifically, the number of cycles was 8. In other embodiments, the number of cycles may be set as desired, and is not particularly limited.
S4, growing a last InGaN quantum well layer on the InGaN quantum well layer and the GaN quantum barrier layer which alternately grow periodically; specifically, an InGaN quantum well layer with the thickness of 3nm is grown at the growth temperature of 850 ℃ under the growth pressure of 300mbar, the growth time is 150s, the needed Ga source is TEGa, the flow rate is set to be 55sccm, the In source is TMIn, the flow rate is set to be 900sccm, and the growth atmosphere is N2. In some embodiments, the growth temperature of the InGaN quantum well layer may be 700-900 ℃, the growth pressure may be 200-400mbar, and the growth thickness may be 2-6 nm.
S5, growing GaN quantum barrier layers on the last InGaN quantum well layer in N continuous time periods; the growth temperature of the GaN quantum barrier layer in the next time period is less than or equal to the growth temperature of the GaN quantum barrier layer in the adjacent previous time period; in is doped when the GaN quantum barrier layers grow In the first n time periods, and In source flow is linearly reduced along with time In the time period of In doping when each GaN quantum barrier layer grows; wherein N is more than or equal to 2, and N is more than or equal to 1. In this embodiment, N is 3, N is N-1, and step S5 specifically includes:
s51, in the first time period, the growth temperature is 930 ℃, the growth pressure is 400mbar, the growth time is 50S, the needed Ga source is TEGa, the flow rate is set to 345sccm, In source is TMIn, flow rate is reduced to 400sccm from 900sccm, and growth atmosphere is N2；
S52, setting the growth temperature to be 910 ℃ under the condition that other conditions In the first time period are not changed, reducing the In source flow of 400sccm to 0, and growing for 50S;
and S53, in the third time period, under the condition that other conditions in the first time period are not changed, the growth temperature is 890 ℃, the TMIn source is closed, and the growth time is 95S.
EXAMPLE five
As shown in fig. 1, the present embodiment discloses a quantum well light emitting layer structure, which is obtained by using the growth method of the quantum well light emitting layer structure in the first embodiment, and includes InGaN quantum well layers and GaN quantum barrier layers that are alternately grown, a GaN quantum barrier layer is grown on the last InGaN quantum well layer in N consecutive time periods, and the growth temperature of the GaN quantum barrier layer in the next time period is less than or equal to the growth temperature of the GaN quantum barrier layer in the adjacent previous time period; in is doped when the GaN quantum barrier layers grow In the first n time periods, and In source flow is linearly reduced along with time In the time period of In doping when each GaN quantum barrier layer grows; wherein N is more than or equal to 2, and N is more than or equal to 1.
According to the quantum well light-emitting layer structure, the last GaN quantum barrier layer In the light-emitting layer grows In a segmented mode, In-doped components are gradually changed, on one hand, the injection of a p-type layer hole into the quantum well light-emitting layer is greatly promoted, on the other hand, the activation effect In the last quantum well layer is reduced, the overlapping of electrons and holes is improved, the light-emitting efficiency of a quantum well is improved, the drop effect under high current is improved, compared with the traditional GaN quantum barrier structure, the photoelectric performance of a light-emitting device is improved, and the quantum well light-emitting layer structure can be used for mass production.
In this embodiment, N is N-1, the end flow rate of the In source In the In doping period during the growth of the GaN quantum barrier layer In the nth period is 0, and the flow rate of the In source for the growth of the GaN quantum barrier layer In the nth period is 0. Namely, the GaN quantum barrier layer does not dope In the last time period and continues to grow.
Optionally, the rate of the decrease of the In source flow gradually decreases In different time periods of In doping during growth of the GaN quantum barrier layer. The growth quality of the GaN quantum barrier layer is further improved, and the activation effect in the last quantum well layer is further reduced.
Further, In the time period of In doping during the growth of each GaN quantum barrier layer, the tail end flow of the In source during the growth of the GaN quantum barrier layer is the initial flow of the In source during the growth of the GaN quantum barrier layer In the next adjacent time period. The gradual change and the continuity of the In-doped component are ensured, the growth quality of the GaN quantum barrier layer is ensured, the gradient of a carrier injection barrier of the GaN quantum barrier is improved, and the carrier injection efficiency is improved.
In the present embodiment, N is 3. The time corresponding to three continuous time periods is t1、t2And t3The growth time of each GaN quantum barrier layer in the InGaN quantum well layer and the GaN quantum barrier layer which alternately grow is t, preferably, the following conditions are met: t is t1+t2+t3＝t，t/4≤t1<t，t/4≤t2<t，0<t3T/2 is less than or equal to. In other embodiments, the number of N may be set according to needs, and is not limited specifically.
Further, the growth temperature of each GaN quantum barrier layer in the InGaN quantum well layer and the GaN quantum barrier layer which alternately grow is T, the growth temperature of the GaN quantum barrier layer in three continuous time periods is T1, T2 and T3 respectively, and the following conditions are met: t is more than or equal to T1 and more than or equal to T2 and more than or equal to T3 and more than or equal to T-60 ℃. The production temperature is ensured within a reasonable interval so as to ensure the growth quality.
Optionally, the cycle number of the InGaN quantum well layer and the GaN quantum barrier layer which are alternately grown is 1-20, the thickness of the InGaN quantum well layer is 2-5nm, and the thickness of the GaN quantum barrier is 3-20 nm. In some embodiments, the number of cycle periods of the InGaN quantum well layer and the GaN quantum barrier layer which are alternately grown, the thickness of the InGaN quantum well layer, and the thickness of the GaN quantum barrier are not limited, and may be set as required.
EXAMPLE six
As shown in fig. 1, the present embodiment discloses a quantum well light emitting layer structure, which is obtained by using the growth method of the quantum well light emitting layer structure in the second embodiment, and includes InGaN quantum well layers and GaN quantum barrier layers that are alternately grown, a GaN quantum barrier layer is grown on the last InGaN quantum well layer in N consecutive time periods, and the growth temperature of the GaN quantum barrier layer in the next time period is less than or equal to the growth temperature of the GaN quantum barrier layer in the adjacent previous time period; in is doped when the GaN quantum barrier layers grow In the first n time periods, and In source flow is linearly reduced along with time In the time period of In doping when each GaN quantum barrier layer grows; wherein N is more than or equal to 2, and N is more than or equal to 1.
In this embodiment, N is N-1, the end flow of the In source is 0 In the In doping period during the growth of the GaN quantum barrier layer In the nth period, and Al is doped during the growth of the GaN quantum barrier layer In the nth period. Namely, the GaN quantum barrier layer is not doped with In the last time period, and is doped with Al to continue growing.
EXAMPLE seven
As shown in fig. 1, the present embodiment discloses a quantum well light emitting layer structure, which is obtained by using the growth method of the quantum well light emitting layer structure in the third embodiment, and includes InGaN quantum well layers and GaN quantum barrier layers that are alternately grown, a GaN quantum barrier layer is grown on the last InGaN quantum well layer in N consecutive time periods, and the growth temperature of the GaN quantum barrier layer in the next time period is less than or equal to the growth temperature of the GaN quantum barrier layer in the adjacent previous time period; in is doped when the GaN quantum barrier layers grow In the first n time periods, and In source flow is linearly reduced along with time In the time period of In doping when each GaN quantum barrier layer grows; wherein N is more than or equal to 2, and N is more than or equal to 1.
In this embodiment, N is N, and the In source end flow rate is 0 when the GaN quantum barrier layer is grown In the nth period. In is doped when the GaN quantum barrier layers In the N time periods grow, the flow of the In source is linearly reduced, and the flow is reduced to 0 when the last time period is finished.
As shown in fig. 2, in the present embodiment, N is equal to 3, and the times corresponding to three consecutive periods are t1、t2And t3The initial flow rates of the In source for three consecutive periods are f1, f2 and f3, respectively, and the terminal flow rates of the In source for three consecutive periods are f2, f3 and 0, respectively. Preferably, f is more than or equal to f1 and more than or equal to f/2, f1 and more than or equal to f2 and more than or equal to f/4, and f2 and more than or equal to f3 and more than or equal to 0.
Example eight
The embodiment discloses a quantum well light emitting layer structure, which is obtained by adopting the growth method of the quantum well light emitting layer structure in the fourth embodiment, the quantum well light emitting layer structure comprises InGaN quantum well layers and GaN quantum barrier layers which are alternately grown, the GaN quantum barrier layers are grown on the last InGaN quantum well layer in N continuous time periods, and the growth temperature of the GaN quantum barrier layers in the next time period is less than or equal to the growth temperature of the GaN quantum barrier layers in the adjacent previous time period; in is doped when the GaN quantum barrier layers grow In the first n time periods, and In source flow is linearly reduced along with time In the time period of In doping when each GaN quantum barrier layer grows; wherein N is more than or equal to 2, and N is more than or equal to 1.
In this embodiment, N is 3 and N is N-1. In this example, the growth temperature was 930 ℃ for the first time period, 910 ℃ for the second time period, and 890 ℃ for the third time period. The gradient change of the temperature is ensured, and the photoelectric property of the quantum well light-emitting layer structure is further improved.
Example nine
The present embodiment discloses an epitaxial wafer including the quantum well light emitting layer structure according to any one of embodiments five to eight.
Comparative example 1
The comparative example 1 differs from the first example in that: in the first two time periods, In is doped during the growth of the GaN quantum barrier, the flow of the In source is 300sccm, and In is not doped during the growth of the GaN quantum barrier In the third time period. The rest is the same as the first embodiment.
Comparative example 2
The comparative example 2 differs from the second example in that: in three time periods, the GaN quantum barrier is not doped with In during growth. The other steps are the same as those in the embodiment.
Comparative example 3
The comparative example 1 differs from the third example in that: in all three time periods, In is doped In the growth of the GaN quantum barrier, and the flow of the In source is 300 sccm. The other steps are the same as those in the example.
Comparative example 4
The comparative example 1 differs from the first example in that: in all three time periods, In is doped during the growth of the GaN quantum barrier, and the flow of the In source is linearly reduced from 900sccm In the first time period to 0sccm In the third time period. The rest is the same as the first embodiment.
Table 1 shows the comparison of the performance parameters of the epitaxial wafers grown in examples one, two, three and four and comparative examples 1, 2, 3 and 4.
As can be seen from Table 1, the epitaxial wafer grown by the growth method of the quantum well light-emitting layer structure has higher light-emitting efficiency, the drop effect under large current is obviously improved, the photoelectric property of a light-emitting device is improved, and compared with single linear change doping, the sectional doping method can obviously improve the barrier gradient of electrons which are injected into a p-type layer over the light-emitting layer, and has more excellent drop effect.
Figure BDA0003412772200000121
Figure BDA0003412772200000131
TABLE 1
The above embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. The equivalent substitution or change made by the technical personnel in the technical field on the basis of the invention is all within the protection scope of the invention. The protection scope of the invention is subject to the claims.

Claims (10)

1. The growth method of the quantum well light-emitting layer structure is characterized by comprising the following steps of:
s1, growing an InGaN quantum well layer on the substrate with the n-type epitaxial layer;
s2, growing a GaN quantum barrier layer on the InGaN quantum well layer;
s3, alternately repeating S1 and S2 to form InGaN quantum well layers and GaN quantum barrier layers which alternately grow periodically;
s4, growing a last InGaN quantum well layer on the InGaN quantum well layer and the GaN quantum barrier layer which alternately grow periodically;
s5, growing GaN quantum barrier layers on the last InGaN quantum well layer in N continuous time periods; the growth temperature of the GaN quantum barrier layer in the next time period is less than or equal to the growth temperature of the GaN quantum barrier layer in the adjacent previous time period; in is doped during the growth of the GaN quantum barrier layers In the first n time periods, and the flow of an In source is linearly reduced along with time during the time period of In doping during the growth of each GaN quantum barrier layer; wherein N is more than or equal to 2, and N is more than or equal to 1.
2. The method for growing a quantum well light-emitting layer structure according to claim 1, wherein In step S5, the rate of decrease In the In source flow is gradually decreased during different periods of In doping during the growth of the GaN quantum barrier layer.
3. The method for growing a quantum well light-emitting layer structure as claimed In claim 1, wherein In step S5, In each period of In doping during the growth of the GaN quantum barrier layer, the end flow rate of the In source during the growth of the GaN quantum barrier layer is the initial flow rate of the In source during the growth of the GaN quantum barrier layer In the next adjacent period.
4. The method of growing a quantum well light emitting layer structure according to claim 1, wherein In source flow rate of In doped during the growth of the last InGaN quantum well layer is f In step S4; in step S5, the initial flow rate of the In-doped In source during the growth of the GaN quantum barrier layer In the first time period is f1, and the end flow rate is f2, which satisfies the following conditions: f is more than or equal to f1 and more than f 2.
5. The method for growing a quantum well light-emitting layer structure according to claim 1, wherein N is N-1, wherein the end flow of the In source In the In doping period during the growth of the GaN quantum barrier layer In the nth period is 0, and the flow of the In source during the growth of the GaN quantum barrier layer In the nth period is 0.
6. The method according to claim 1, wherein N is N-1, wherein a flow rate of an In source end In an In doping period during the growth of the GaN quantum barrier layer In the nth period is 0, and wherein Al is doped during the growth of the GaN quantum barrier layer In the nth period.
7. The method according to claim 1, wherein N is N, and wherein an In source end flow rate is 0 during the growth of the GaN quantum barrier layer In the nth period.
8. The method of growing a quantum well light emitting layer structure of claim 1, wherein when N is 3, the three consecutive periods of time correspond to times t, respectively1、t2And t3The growth time of each GaN quantum barrier layer in the InGaN quantum well layer and the GaN quantum barrier layer which alternately grow is t, and the following requirements are met: t is t1+t2+t3＝t，t/4≤t1<t，t/4≤t2<t，0<t3≤t/2。
9. A quantum well light emitting layer structure, comprising: the light-emitting layer structure of the quantum well as the light-emitting layer structure of any one of claims 1-8.
10. An epitaxial wafer comprising the quantum well light emitting layer structure of claim 9.
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