CN104134732B - It is a kind of to improve the epitaxial structure that GaN base LED efficiency declines - Google Patents
It is a kind of to improve the epitaxial structure that GaN base LED efficiency declines Download PDFInfo
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- CN104134732B CN104134732B CN201410356966.9A CN201410356966A CN104134732B CN 104134732 B CN104134732 B CN 104134732B CN 201410356966 A CN201410356966 A CN 201410356966A CN 104134732 B CN104134732 B CN 104134732B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Abstract
The present invention proposes the epitaxial structure that a kind of improvement LED efficiency declines, including substrate and GaN bottoms, superlattices stress release layer, multiple quantum well layer, p-type InGaN insert layers, P-type electron barrier layer and the p-type GaN layer being sequentially stacked on substrate.One layer of p-type InGaN insert layer is inserted between last potential barrier of multiple quantum well layer and P-type electron barrier layer, the In components of p-type InGaN insert layers use the mg-doped of pulsed from close multiple quantum well layer to the ascending gradual change of electronic barrier layer.One aspect of the present invention can reduce electronics to the leakage at P ends, on the other hand can strengthen injection of the hole to active area.The present invention can improve the problem of GaN base LED efficiency declines, and improve the luminous efficiency under the conditions of high current.
Description
Technical field
The present invention relates to GaN base blue-ray LED manufacture field, more particularly to it is a kind of can improve LED efficiency decline extension
Structure.
Background technology
Light emitting diode (LED, Light Emitting Diode) is a kind of semiconducting solid luminescent device, and it utilizes half
Conductor PN junction can directly convert the electricity into light as luminescent material.GaN (gallium nitride) based high-brightness light-emitting diode is current
The forward position and focus of optoelectronic areas and industry.Current InGaN (InGaN), GaN base LED luminous efficiency have had aobvious
Writing ground improves, but for high-power GaN-based LED, there is serious quantum efficiency and decline (efficiency droop)
Problem, i.e., in the case of Bulk current injection, LED internal quantum efficiency can decline rapidly.Forefathers propose many mechanism and go solution
Release this phenomenon, including the leakage of polarized electric field, electronics, active area Carrier Profile is uneven, Auger non-radiative recombination etc..From it
From the point of view of preceding research, hole injection efficiency is not high, and it is to cause the possibility that quantum efficiency declines under high current that electronics is revealed to P ends
One of reason.
For electronic blocking it is inadequate the problem of, there is researcher to propose electronic barrier layer (Electron Blocking
Layer, EBL).However, due to the presence of polarized electric field between hetero-junctions, electronic barrier layer can be tilted down, in high current note
Under the conditions of entering, traditional electronic barrier layer is still not enough to stop leakage of the electronics to P ends, while conditional electronic barrier layer is big
Energy gap also counteracts that injection of the hole to multiple quantum well layer.
The content of the invention
Improve the epitaxial structure that GaN base LED efficiency declines it is an object of the invention to provide a kind of, in large driven current density bar
Under part, it on the one hand can further stop that a large amount of electronics are revealed to P ends, on the other hand also increase hole to multiple quantum well layer
Injection, thus the luminous efficiencies of GaN base LED under conditions of high current can be improved.
To achieve these goals, the present invention proposes the epitaxial structure that a kind of improvement GaN base LED efficiency declines, described
Structure includes substrate and the GaN bottoms, superlattices stress release layer, multiple quantum well layer, the p-type InGaN that are sequentially stacked on substrate
Insert layer, P-type electron barrier layer and p-type GaN layer.
Further, the p-type InGaN insert layers are pulsed Mg doping, and In component is from 0% to 7% gradual change；It is described
The thickness of p-type InGaN insert layers is 3nm~12nm, and Mg doping concentration scopes are 1e18cm-3~1e19cm-3。
Further, the electronic barrier layer is pAlGaN or the superlattice structure being made up of pAlGaN/pGaN, institute
The thickness for stating electronic barrier layer is 30~80nm.
Further, the doping concentration scope of magnesium is 1e19cm in the p-type GaN layer-3~6e20cm-3, the p-type GaN
The thickness of layer is 30nm~50nm.
Compared with prior art, the beneficial effects are mainly as follows：In multiple quantum well layer and P-type electron barrier layer
Between formed p-type InGaN insert layers, due to indium content gradually variational in p-type InGaN insert layers, thus can improve GaN potential barriers with insert
Enter polarized electric field caused by the lattice mismatch between layer, in addition, being compared with conditional electronic barrier layer, indium gallium nitrogen has smaller
Energy gap；Hole injection efficiency can thus be increased, prevent electronics from being revealed to P ends, GaN base LED is improved in high current condition
Under luminous efficiency.
Brief description of the drawings
Fig. 1 is the cross-sectional view of the epitaxial structure of improvement GaN base LED efficiency decline in one embodiment of the invention；
Fig. 2 is the Making programme figure of the epitaxial structure of improvement GaN base LED efficiency decline in one embodiment of the invention；
Fig. 3 to Fig. 6 be one embodiment of the invention in can improve GaN base LED efficiency decline epitaxial structure manufacturing process
In diagrammatic cross-section.
Embodiment
The epitaxial structure that the improvement GaN base LED efficiency of the present invention declines is carried out below in conjunction with schematic diagram more detailed
Description, which show the preferred embodiments of the present invention, it should be appreciated that those skilled in the art can change described here
Invention, and still realize the advantageous effects of the present invention.Therefore, description below is appreciated that for those skilled in the art's
It is widely known, and it is not intended as limitation of the present invention.
For clarity, not describing whole features of practical embodiments.In the following description, it is not described in detail known function
And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments
In hair, it is necessary to make a large amount of implementation details to realize the specific objective of developer, such as according to relevant system or relevant business
Limitation, another embodiment is changed into by one embodiment.Additionally, it should think that this development is probably complicated and expended
Time, but it is only to those skilled in the art routine work.
The present invention is more specifically described by way of example referring to the drawings in the following passage.Will according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing is using very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
As mentioned by background technology, under Bulk current injection, be present substantial amounts of electronics in active area, thus will have
The electronics of amount is leaked to P ends；Simultaneously as the effective mass in hole than larger, cause it to the injection of active area be not very equal
It is even, it is concentrated mainly in the potential well at P ends.
Fig. 1 is refer to, in view of the above-mentioned problems, the present embodiment proposes the extension that a kind of improvement GaN base LED efficiency declines
Structure, the structure includes substrate 10 and the GaN bottoms, superlattices stress release layer 40, the Multiple-quantum that are sequentially stacked on substrate
Well layer 50, p-type InGaN insert layers 70, P-type electron barrier layer 70 and p-type GaN layer 80.
Wherein, p-type InGaN insert layers 70 be pulsed Mg doping (Delta Mg doping), wherein In component from 0% to
7% gradual change；The thickness of p-type InGaN insert layers 70 is 3nm~12nm, e.g. 8nm, and Mg doping concentration scopes are 1e18cm-3~
1e19cm-3.The activation rate of the magnesium of p-type InGaN insert layers 70 can be improved using the Mg doping of delta formulas, while can also reduce
Magnesium makes its performance in low current also not dislike to the diffusion in multiple quantum well layer 50 last potential barrier (Last barrier)
Change.If epitaxial structure is used for making the chip under low current, can not be magnesium-doped in p-type InGaN insert layers 70.P-type
The component of indium is 0 in the one side that InGaN insert layers 70 are in contact with multiple quantum well layer 50, p-type InGaN insert layers 70 with it is follow-up
The component of indium is 7% in the one side that the electronic barrier layer of formation is in contact, in p-type InGaN insert layers 70 component of indium by 0 to
7% gradual change.Because indium content gradually variational reduces and can improve last barrier and p-type InGaN and insert in p-type InGaN insert layers 70
Enter polarized electric field caused by the lattice mismatch between layer 70, additionally due on the one hand InGaN has smaller energy gap
The barrier height revealed to P ends electronics is increased, on the other hand the barrier height that hole is injected to N bottoms is reduced again, because
And hole injection efficiency can be increased, prevent electronics from being revealed to P ends, improve luminous efficiency.
The present embodiment only can improve phenomenon inefficient under high current by one layer of p-type InGaN insert layer 70, have
It is simple to operate, it is easy to accomplish the advantages of.
Fig. 2 is refer to, the present embodiment proposes a kind of manufacture for the epitaxial structure that can improve the decline of GaN base LED efficiency
Method, including step：
S100：Substrate 10 is provided, GaN cushions 20 are formed on substrate, the growth thickness of GaN cushions 20 be about 15nm~
50nm, as shown in Figure 3；
S200：Undoped gallium nitride layer 30 and n-type silicon doped gallium nitride layer 40 are sequentially formed on GaN cushions 20；
The total thickness of undoped gallium nitride layer 30 and n-type silicon doped gallium nitride layer 40 is 1.5~4.5um, is, for example,
3um。
S300：Superlattices stress release layer 50 is formed in n-type silicon doped gallium nitride layer 40, as shown in Figure 4；
Wherein, superlattices stress release layer 50 is that InGaN and GaN is alternately constituted, and the InGaN and GaN of one are a week
Between In change of component scope is 0%-7% in phase pair, InGaN, superlattices stress release layer 50 is 3~20 cycles pair, example
10 cycles pair in this way.
S400：Multiple quantum well layer 60 is formed on superlattices stress release layer 50, as shown in Figure 5；
Multiple quantum well layer 60 is alternately made up of potential well and potential barrier, and a potential well and potential barrier are a cycle pair, same period
Internally, potential barrier is formed on potential well, and multiple quantum well layer 60 includes 5~18 cycles pair, e.g. 8 cycles pair.Potential well
Material is InGaN, and the thickness range of potential well is 2nm~5nm, and the material of potential barrier is gallium nitride, and the thickness range of potential barrier is
6nm~14nm；Other potential barriers carry out n-type silicon doping in addition to last potential barrier in multiple quantum well layer 6, and doping scope is
1e17cm-3~2e18cm-3。
S500：P-type InGaN insert layers 70 are formed on multiple quantum well layer 60, as shown in Figure 6；
P-type InGaN insert layers 70 are using pulsed doping magnesium elements (Delta Mg doping), and doping concentration scope is 2e18
The thickness of~1e19, p-type InGaN insert layer 70 is 3nm~12nm, e.g. 8nm.S600：In p-type InGaN insert layers 70
Electronic barrier layer 80 and p-type GaN layer 90 are sequentially formed, epitaxial structure is constituted, as shown in Figure 1.
The electronic barrier layer 80 formed in p-type InGaN insert layers 70 is the gallium nitride (pAlGaN) of p-type adulterated al, p-type
The superlattice structure of gallium nitride (pGaN) or both combination (pAlGaN-GaN), the thickness of electronic barrier layer 80 for 30nm~
80nm, e.g. 50nm, electronic barrier layer 80 can increase the stop to electronics, prevent electronics from being revealed to P ends, further
Raising luminous efficiency.
The p-type GaN layer 90 formed on electronic barrier layer 80 is the magnesium-doped gallium nitride of p-type, the doping concentration scope of magnesium
It is 1e19~6e19cm-3, the thickness of p-type GaN layer 90 is 30nm~50nm, e.g. 40nm, is consequently formed epitaxial structure.
To sum up, in the epitaxial structure that improvement GaN base LED efficiency provided in an embodiment of the present invention declines, in MQW
P-type InGaN insert layers are formed between layer and P-type electron barrier layer, due to indium content gradually variational in p-type InGaN insert layers, so energy
Enough improve polarized electric field caused by the lattice mismatch between GaN potential barriers and insert layer, in addition, compared with conditional electronic barrier layer,
Indium gallium nitrogen has smaller energy gap；Hole injection efficiency can thus be increased, prevent electronics from being revealed to P ends, GaN is improved
The luminous efficiencies of base LED under conditions of high current.
The preferred embodiments of the present invention are above are only, any restriction effect is not played to the present invention.Belonging to any
Those skilled in the art, in the range of technical scheme is not departed from, to the invention discloses technical scheme and
Technology contents make the variation such as any type of equivalent substitution or modification, belong to the content without departing from technical scheme, still
Belong within protection scope of the present invention.
Claims (3)
1. a kind of improve the epitaxial structure that GaN base LED efficiency declines, the structure includes substrate and is sequentially stacked on substrate
GaN bottoms, superlattices stress release layer, multiple quantum well layer, p-type InGaN insert layers, P-type electron barrier layer and p-type GaN layer,
The p-type InGaN insert layers are pulsed Mg doping, and In component is from 0% to 7% gradual change；The p-type InGaN insert layers
Thickness is 3nm~12nm, and Mg doping concentration scopes are 1e18cm-3~1e19cm-3。
2. improve the epitaxial structure that GaN base LED efficiency declines as claimed in claim 1, it is characterised in that the electronic blocking
Layer is pAlGaN or the superlattice structure being made up of pAlGaN/pGaN, and the thickness of the electronic barrier layer is 30~80nm.
3. improve the epitaxial structure that GaN base LED efficiency declines as claimed in claim 1, it is characterised in that the p-type GaN layer
The doping concentration scope of middle magnesium is 1e19cm-3~6e20cm-3, the thickness of the p-type GaN layer is 30nm~50nm.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410356966.9A CN104134732B (en) | 2014-07-24 | 2014-07-24 | It is a kind of to improve the epitaxial structure that GaN base LED efficiency declines |
| GB1700942.4A GB2543682B (en) | 2014-07-24 | 2015-07-20 | Epitaxial structure for improving efficiency drop of GaN-based LED |
| DE112015003419.6T DE112015003419T5 (en) | 2014-07-24 | 2015-07-20 | Epitaxy structure to improve the efficiency of GaN-based LEDs |
| PCT/CN2015/084486 WO2016011924A1 (en) | 2014-07-24 | 2015-07-20 | EPITAXIAL STRUCTURE FOR IMPROVING EFFICIENCY DROP OF GaN-BASED LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410356966.9A CN104134732B (en) | 2014-07-24 | 2014-07-24 | It is a kind of to improve the epitaxial structure that GaN base LED efficiency declines |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104134732A CN104134732A (en) | 2014-11-05 |
| CN104134732B true CN104134732B (en) | 2017-09-19 |
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| CN201410356966.9A Expired - Fee Related CN104134732B (en) | 2014-07-24 | 2014-07-24 | It is a kind of to improve the epitaxial structure that GaN base LED efficiency declines |
Country Status (4)
| Country | Link |
|---|---|
| CN (1) | CN104134732B (en) |
| DE (1) | DE112015003419T5 (en) |
| GB (1) | GB2543682B (en) |
| WO (1) | WO2016011924A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104134732B (en) * | 2014-07-24 | 2017-09-19 | 映瑞光电科技(上海)有限公司 | It is a kind of to improve the epitaxial structure that GaN base LED efficiency declines |
| CN104638082B (en) * | 2015-02-04 | 2017-10-13 | 映瑞光电科技(上海)有限公司 | The preparation method of low-voltage GaN base LED epitaxial structures |
| CN105405939B (en) * | 2015-12-02 | 2018-01-12 | 华灿光电(苏州）有限公司 | A kind of light emitting diode and its manufacture method |
| CN105514235A (en) * | 2015-12-25 | 2016-04-20 | 扬州德豪润达光电有限公司 | Multiple-quantum well structure for optoelectronic device |
| CN105789391B (en) * | 2016-04-28 | 2018-06-26 | 聚灿光电科技（宿迁）有限公司 | GaN base LED epitaxial structure and its manufacturing method |
| CN105870269B (en) * | 2016-05-26 | 2018-08-28 | 湘能华磊光电股份有限公司 | Improve the LED epitaxial growing method of hole injection |
| CN105932118B (en) * | 2016-06-13 | 2018-01-30 | 湘能华磊光电股份有限公司 | Improve the LED epitaxial growth methods of hole injection |
| CN106299052B (en) * | 2016-09-22 | 2018-11-27 | 绍兴市上虞宜美照明电器有限公司 | A kind of GaN epitaxial structure and preparation method for LED |
| CN107204391B (en) * | 2017-05-24 | 2018-12-28 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial growth method |
| CN107146836A (en) * | 2017-05-26 | 2017-09-08 | 华南理工大学 | GaN base green light LED epitaxial structure with gradual change In component p-type InGaN conductive layers and preparation method thereof |
| CN110098293B (en) * | 2019-04-26 | 2021-03-19 | 中国电子科技集团公司第三十八研究所 | LED structure with heteroepitaxy NIP junction type multi-quantum well light-emitting layer terminal |
| CN110783432B (en) * | 2019-11-04 | 2022-02-22 | 马鞍山杰生半导体有限公司 | Ultraviolet LED epitaxial wafer and preparation method thereof |
| CN111710762B (en) * | 2020-06-28 | 2021-10-15 | 中国科学院半导体研究所 | Group III nitride optoelectronic devices with p-type polarization doping |
| CN112436079A (en) * | 2020-10-31 | 2021-03-02 | 扬州大学 | GaN-based LED epitaxial structure of inverted triangular potential barrier and growth method thereof |
| CN112467004B (en) * | 2020-10-31 | 2022-06-07 | 扬州大学 | GaN-based LED epitaxial structure containing electronic storage layer and growth method thereof |
| CN114038956A (en) * | 2021-03-16 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Light emitting chip and epitaxial structure thereof |
| CN113410345B (en) * | 2021-06-15 | 2022-08-26 | 厦门士兰明镓化合物半导体有限公司 | Ultraviolet semiconductor light emitting element |
| CN115224171B (en) * | 2022-09-20 | 2022-11-29 | 江西兆驰半导体有限公司 | High-light-efficiency light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
| CN115347097B (en) * | 2022-10-18 | 2023-03-14 | 江西兆驰半导体有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN117410413B (en) * | 2023-12-14 | 2024-03-08 | 江西兆驰半导体有限公司 | LED epitaxial wafer and preparation method thereof |
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-
2014
- 2014-07-24 CN CN201410356966.9A patent/CN104134732B/en not_active Expired - Fee Related
-
2015
- 2015-07-20 GB GB1700942.4A patent/GB2543682B/en not_active Expired - Fee Related
- 2015-07-20 DE DE112015003419.6T patent/DE112015003419T5/en not_active Withdrawn
- 2015-07-20 WO PCT/CN2015/084486 patent/WO2016011924A1/en active Application Filing
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| CN101740681A (en) * | 2008-11-07 | 2010-06-16 | 三星电机株式会社 | Nitride semiconductor device |
| CN102157646A (en) * | 2011-05-03 | 2011-08-17 | 映瑞光电科技(上海)有限公司 | Nitride LED structure and preparation method thereof |
| CN103681999A (en) * | 2012-09-14 | 2014-03-26 | 台积固态照明股份有限公司 | Photonic Devices with Embedded Hole Injection Layer to Improve Efficiency and Droop Rate |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2543682A (en) | 2017-04-26 |
| GB2543682B (en) | 2019-04-17 |
| CN104134732A (en) | 2014-11-05 |
| DE112015003419T5 (en) | 2017-05-11 |
| WO2016011924A1 (en) | 2016-01-28 |
| GB201700942D0 (en) | 2017-03-08 |
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