KR20130124718A - Light emitting diode - Google Patents

Light emitting diode Download PDF

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Publication number
KR20130124718A
KR20130124718A KR1020120048046A KR20120048046A KR20130124718A KR 20130124718 A KR20130124718 A KR 20130124718A KR 1020120048046 A KR1020120048046 A KR 1020120048046A KR 20120048046 A KR20120048046 A KR 20120048046A KR 20130124718 A KR20130124718 A KR 20130124718A
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KR
South Korea
Prior art keywords
layer
type semiconductor
light emitting
active layer
emitting diode
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KR1020120048046A
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Korean (ko)
Inventor
한유대
최주원
허정훈
이충민
이관현
신수진
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서울바이오시스 주식회사
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Priority to KR1020120048046A priority Critical patent/KR20130124718A/en
Publication of KR20130124718A publication Critical patent/KR20130124718A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

The present invention relates to a light emitting diode. According to the present invention, a P-type semiconductor layer, an active layer and an N-type semiconductor layer, including an electron deceleration layer between the active layer and the N-type semiconductor layer, the active layer is a quantum well with a well layer and a barrier layer is repeatedly provided A light emitting diode is provided, wherein the electron deceleration layer includes Al (1-x) In x N.

Description

[0001] LIGHT EMITTING DIODE [0002]

The present invention relates to a light emitting diode.

The light emitting diode is basically a PN junction diode which is a junction between a P-type semiconductor and an N-type semiconductor.

When the P-type semiconductor and the N-type semiconductor are bonded to each other by applying a voltage to the P-type semiconductor and the N-type semiconductor, the light emitting diode (LED) Type semiconductor and the electrons of the N type semiconductor migrate toward the P type semiconductor, and the electrons and the holes move to the PN junction.

The electrons moved to the PN junction are combined with holes as they fall from the conduction band to the valence band. At this time, energy corresponding to a height difference between the conduction band and the electromotive band, that is, an energy difference, is emitted, and the energy is emitted in the form of light.

In this case, the mobility of the electrons is about 10 times larger than that of the holes, and the activation energy of the electrons is only 1/10 of that of the holes.

As a result, electrons diffuse more strongly than holes, and regions where electrons and holes combine are concentrated on the P-type semiconductor side. In order to prevent such a problem, that is, the diffusion of electrons strongly in the hole region, an electron blocking layer is conventionally formed on the P-type semiconductor side.

However, despite having the electron barrier layer, the recombination point of the electron and the hole is biased toward the P-type semiconductor in the active layer, so that the recombination of electrons and holes injected from the outside is biased to the P-type semiconductor, and thus Auger recombination There is a problem that increases, thereby lowering the efficiency.

An object of the present invention is to provide a light emitting diode having high luminous efficiency.

In order to achieve the above object, according to an aspect of the present invention, including a P-type semiconductor layer, an active layer and an N-type semiconductor layer, provided with an electron deceleration layer between the active layer and the N-type semiconductor layer, the active layer is a well layer And a barrier layer is repeatedly provided, and the electron deceleration layer is provided with a light emitting diode comprising Al (1-x) In x N.

The lattice constant of the predetermined region of the electron deceleration layer in contact with the N-type semiconductor layer may be the same as the N-type semiconductor layer.

The lattice constant of a certain region of the electron deceleration layer in contact with the active layer may be the same as the well layer of the active layer.

The electron deceleration layer may have a greater band gap energy than the active layer.

The content of In in the electron deceleration layer increases continuously as it approaches the active layer, or decreases continuously as it approaches a predetermined position between the N-type semiconductor layer and the active layer, and continuously increases after the predetermined position. Alternatively, the step may be stepped closer to the active layer.

The electron deceleration layer further includes In y Ga (1-y) N, wherein the layer including Al (1-x) In x N and the layer including In y Ga (1-y) N are mutually different. It may be provided repeatedly alternately.

A layer including Al (1-x) In x N of the electron deceleration layer closest to the N-type semiconductor layer may have the same lattice constant as the N-type semiconductor layer.

The layer including In y Ga (1-y) N of the electron deceleration layer closest to the active layer may have a lattice constant equal to that of the well layer of the active layer.

Well layer of the active layer is made of, including .15 In 0 Ga 0 .85 N, the barrier layer of the active layer can be made, including GaN.

An electron barrier layer may be further included between the active layer and the P-type semiconductor layer.

According to the present invention, there is an effect of providing a light emitting diode having high luminous efficiency.

1 is a conceptual diagram depicting a light emitting diode according to embodiments of the present invention.
2 is a graph illustrating lattice constants and band gap energies of materials constituting the light emitting diodes according to example embodiments.
3 is a conceptual diagram illustrating a band diagram of a light emitting diode according to an embodiment of the present invention.
4 is a conceptual diagram illustrating a band diagram for explaining the concept of 2DEG.
5 is a conceptual diagram illustrating a band diagram of a light emitting diode according to another embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a conceptual diagram depicting a light emitting diode according to embodiments of the present invention.

Referring to FIG. 1, a light emitting diode 100 according to an embodiment of the present invention includes a substrate 110, an N-type semiconductor layer 120, an electron deceleration layer 130, an active layer 140, and an electron barrier layer ( 150, the P-type semiconductor layer 160, the transparent electrode layer 170, the N-type electrode 180, and the P-type electrode 190 may be included.

The substrate 110 may be a growth substrate, and the growth substrate is not particularly limited. For example, the substrate 110 may be a sapphire substrate, a GaN substrate, a silicon carbide substrate, or a silicon substrate.

The substrate 110 includes a plurality of N-type semiconductor layers 120, an electron deceleration layer 130, an active layer 140, an electron barrier layer 150, and a P-type semiconductor layer 160 on one surface thereof. A semiconductor layer may be provided, and the semiconductor layers may be formed by using a chemical vapor deposition device or a physical vapor deposition device, or a chemical vapor device such as metalorganic chemical vapor deposition (MOCVD). It can be provided by using epi growth.

A portion of the semiconductor layers, for example, the electron deceleration layer 130, the active layer 140, the electron barrier layer 150, and a portion of the P-type semiconductor layer 160 may be mesa-etched to form the P-type semiconductor layer 120. A portion of may be provided in an exposed form.

The N-type semiconductor layer 120 may include a III-N-based compound semiconductor doped with N-type impurities, such as (Al, Ga, In) N-based Group III nitride semiconductor layer. The N-type semiconductor layer 120 may be formed of a single layer or multiple layers, for example, a superlattice structure, but the N-type semiconductor layer 120 is doped with N-type impurities in a region in contact with the electron deceleration layer 130. It is preferable that it is a GaN layer, ie, an N-GaN layer. In addition, the N-type semiconductor layer 120 may be an InGaN layer.

The electron deceleration layer 130 may be formed of an AlInN layer including AlInN, and the electron deceleration layer 130 may be formed of an InGaN layer including the AlInN layer and InGaN, and the AlInN layer and InGaN. The layers may be alternately repeated, that is, provided in a structure consisting of multiple layers. The electron deceleration layer 130 will be described in detail later with reference to FIGS. 2 to 5.

The active layer 140 may be formed of a compound semiconductor of III-N series, for example, (Al, Ga, In) N semiconductor layer, and the active layer 140 may be formed of a single layer or a plurality of layers, It can emit light. In addition, the active layer 140 may have a single quantum well structure including one well layer (not shown), or a multiple quantum well having a structure in which a well layer (not shown) and a barrier layer (not shown) are alternately stacked. It may be provided in a structure. In this case, the well layer (not shown) or the barrier layer (not shown) may be formed of a superlattice structure, respectively or both.

The active layer 140 may have a multi-quantum well structure in which a well layer including InGaN and a berry layer including GaN are alternately stacked. In particular, the well layer includes 15% of In to Ga. It may be made, including 0 .15 Ga 0 .85 N.

The electron breaking layer 150 may be provided to increase recombination efficiency of electrons and holes, and may be formed of a material having a relatively wide band gap energy. The electron blocking layer 150 may be formed of a (Al, In, Ga) N-based group III nitride semiconductor, and may be formed of a P-AlGaN layer doped with Mg.

The P-type semiconductor layer 160 may be a III-N-based compound semiconductor doped with P-type impurities, such as (Al, In, Ga) N-based Group III nitride semiconductor. The P-type semiconductor layer 160 may be a GaN layer doped with P-type impurities, that is, a P-GaN layer. In addition, the P-type semiconductor layer 160 may be formed of a single layer or multiple layers. For example, the P-type semiconductor layer 160 may have a superlattice structure.

Meanwhile, the semiconductor layers provided on one surface of the substrate 110 may include a buffer layer (not shown).

The buffer layer (not shown) may be provided to mitigate lattice mismatch between the substrate 110 and the N-type semiconductor layer 120. In addition, the buffer layer (not shown) may be formed of a single layer or a plurality of layers, when formed of a plurality of layers, it may be made of a low temperature buffer layer and a high temperature buffer layer. The buffer layer (not shown) may be made of GaN or AlN.

The transparent electrode layer 170 may be provided on the semiconductor layers, preferably the P-type semiconductor layer 160, and may include a contact material such as TCO or Ni / Au such as ITO, ZnO, or IZO. In addition, the P-type semiconductor layer 160 may be in ohmic contact.

The N-type electrode 180 may be provided on a surface of the N-type semiconductor layer 120 in which some of the half layers are mesa-etched and exposed. The N-type electrode 180 may include a conductive material such as Ni, Cr, Ti, Al, Au, Ag, or an alloy containing the same.

The P-type electrode 190 may be provided on the transparent electrode layer 170 and may be made of a conductive material such as Ni, Cr, Ti, Al, Au, or Ag.

2 is a graph illustrating lattice constants and band gap energies of materials constituting the light emitting diodes according to example embodiments.

3 is a conceptual diagram illustrating a band diagram of a light emitting diode according to an embodiment of the present invention.

4 is a conceptual diagram illustrating a band diagram for explaining the concept of 2DEG.

2 to 4, a light emitting diode according to an embodiment of the present invention may be provided as the light emitting diode 100 described with reference to FIG. 1.

3 illustrates a band gap energy of the N-type semiconductor layer 120, the electron deceleration layer 130, the active layer 140, the electron barrier layer 150, and the P-type semiconductor layer 160. Conceptually illustrated band diagram.

At this time, the electron deceleration layer 130 of the light emitting diode 100 according to the present embodiment in more detail, the electron deceleration layer 130 is Al (1-x) In which the ratio of In to Al continuously increases. x N layer. At this time, the x may be in the range of 0.19 to 0.31, that is, the content of In to the Al in a ratio of 19 to 31%.

In this case, as shown in FIG. 3, the electron deceleration layer 130 is provided in a form in which the ratio of In to Al increases continuously from the N-type semiconductor layer 120 toward the active layer 140. Can be. In other words, the electron deceleration layer 130 may be provided in a form in which the band gap energy continuously decreases from the N-type semiconductor layer 120 toward the active layer 140.

In addition, although not illustrated in FIG. 3, the electron deceleration layer 130 continuously decreases the ratio of In to Al until a predetermined position between the N-type semiconductor layer 120 and the active layer 140. After a predetermined position between the N-type semiconductor layer 120 and the active layer 140 may be provided in a form that continuously increases. In other words, in the electron deceleration layer 130, the band gap energy continuously increases to a predetermined position between the N-type semiconductor layer 120 and the active layer 140, and the N-type semiconductor layer 120 and the active layer ( Since the band gap energy is continuously reduced toward the active layer 140 after a predetermined position between the 140 may be provided in the form.

In addition, although not shown in FIG. 3, the electron deceleration layer 130 increases in a step-to-Al ratio in a stepped shape from the N-type semiconductor layer 120 toward the active layer 140. It may be provided. In other words, the electron deceleration layer 130 may be provided in a form in which the band gap energy decreases in a step shape from the N-type semiconductor layer 120 toward the active layer 140.

As shown in FIG. 2, the electron deceleration layer 130 may have a lattice constant having a lattice constant equal to that of the N-type semiconductor layer 120. have. This is because the electron deceleration layer 130 in contact with the N-type semiconductor layer 120 is made of the content of In to the Al in a ratio of 19% and GaN which is a material forming the N-type semiconductor layer 120 and This is because they have the same lattice constant.

In addition, as shown in FIG. 2, the electron deceleration layer 130 may have a lattice constant of a predetermined region in contact with the active layer 140 with the same lattice constant as the well layer of the active layer 140. This is In .15 Ga 0 0 material is made, the content of In in the Al deceleration the electronic layer 130 in contact with the active layer 140 is included in a ratio of 31% form a well layer of the active layer 140 This is because it has the same lattice constant as .85 N.

Therefore, the light emitting diode according to the embodiment may include the electron deceleration layer 130 between the N-type semiconductor layer 120 and the active layer 140. In this case, the electron deceleration layer 130 has a lattice constant equal to or similar to a lattice constant of the N-type semiconductor layer 120 in a certain region, in particular, a region in contact with the N-type semiconductor layer 120. A predetermined region in contact with 140 may be provided to have a lattice constant that is the same as or similar to that of the well layer of the active layer 140. The electron deceleration layer 130 may be provided with a lattice constant within a section that is greater than or equal to the lattice constant of the bare layer of the active layer 140 and less than or equal to the top of the lattice of the well layer of the active layer 140.

In addition, the electron deceleration layer 130 has a higher band gap energy than the region in contact with the N-type semiconductor layer 120 compared to the region in contact with the active layer 140, precisely, the barrier layer of the active layer 140. The N-type semiconductor layer 120 may be provided to be continuously lowered toward the active layer 140.

Therefore, the light emitting diode according to an embodiment of the present invention may have a structure in which spreading uniformity of electrons in a horizontal direction is improved. As shown in FIG. 4, electrons injected from the N-type semiconductor layer 120 have a low 2DEG (two energy) due to low potential energy at an interface between the N-type semiconductor layer 120 and the electron deceleration layer 130. This is because a shape spreading horizontally from the N-type semiconductor layer 120 is caused by -dimensional electron gas 122.

Further, the electronic speed reduction layer 130, if the content of the well layer of the active layer 140 made of In 0 .15 Ga 0 .85 N, Al (1-x) In x N layer In the 19 to 31 When the amount of In is included in 19%, the barrier layer of the active layer 140 and the lattice constant coincide with each other to minimize strain with the barrier layer, and the content of In is 31%. If included, the well layer and the lattice constant of the active layer 140 may be matched to minimize the strain with the well layer. However, since In tends to agglomerate with each other due to its physical properties, when the AlInN layer of the electron deceleration layer 130 is grown, even when the In is evenly applied, the In is bound to each other at a local site. The concentration of becomes high, which causes the top of the topical portion to strain more strongly than the surroundings, and this tendency leads to the active layer 140. If the strain in the active layer 140 is stronger than the surroundings, crystals in the active layer 140 are pressed to generate a piezo electric field, which causes a portion having a low potential energy due to a quantum-confined stark effect (QCSE). And a phenomenon in which carriers accumulate electrons at a local site. As a result, the active layer 140 may increase the possibility of overlapping holes and electrons, thereby increasing luminous efficiency.

5 is a conceptual diagram illustrating a band diagram of a light emitting diode according to another embodiment of the present invention.

2 and 5, a light emitting diode according to another embodiment of the present invention may be provided as the light emitting diode 100 described with reference to FIG. 1.

5 illustrates a band gap energy of the N-type semiconductor layer 120, the electron deceleration layer 130, the active layer 140, the electron barrier layer 150, and the P-type semiconductor layer 160. Conceptually illustrated band diagram.

At this time, the electron deceleration layer 130 of the light emitting diode 100 according to the present embodiment in more detail, the electron deceleration layer 130 is a plurality of Al (1-x) In x N layer 132 and a plurality of In y Ga (1-y) of the N layer 134 may be included.

In this case, the electron deceleration layer 130 may be provided by alternately repeating the Al (1-x) In x N layers 132 and the In y Ga (1-y) N layers 134. .

At this time, the x may be in the range of 0.19 to 0.31, that is, the content of In to the Al in a ratio of 19 to 31%. In addition, y may be greater than 0 and less than 0.15, that is, the content of In to Ga is greater than 0 and less than 0.15%.

The electron deceleration layer 130 is provided with alternating Al (1-x) In x N layers 132 and the In y Ga (1-y) N layers 134 alternately with each other, respectively, The content of In for Al is 19 to 31% and the content of In for Ga is greater than 0 and less than 0.15%.

In this case, among the Al (1-x) In x N layers 132 and the In y Ga (1-y) N layers 134, layers having a small In ratio to Al or Ga are the N-type semiconductors. Layers provided close to the layer 120 and having a large ratio of In to Ga or Al may be provided close to the active layer 140.

Meanwhile, among the Al (1-x) In x N layers 132 and the In y Ga (1-y) N layers 134 of the electron deceleration layer 130, the N-type semiconductor layer 120 is the most. One layer located close to each other, that is, a layer having a ratio of In to Al of about 19% among the Al (1-x) In x N layers 132 and the In y Ga (1-y) N layer 134 The ratio of In to Al is greater than 0 but the smallest ratio to other layers may be provided with layers whose lattice constant is the same as or similar to that of the N-type semiconductor layer 120.

In addition, one of the Al (1-x) In x N layers 132 and the In y Ga (1-y) N layers 134 of the electron deceleration layer 130 that is closest to the active layer 140. Of the Al (1-x) In x N layers 132, that is, a layer whose In to Al ratio is about 31%, and the In y Ga (1-y) N layer 134. A layer having a ratio of In to Ga of less than 15% may be provided with layers whose lattice constant is the same as or similar to that of the well layer of the active layer 140.

In this case, the Al (1-x) In x N layers 132 and the In y Ga (1-y) N layers 134 of the electron deceleration layer 130 are, as shown in FIG. In the semiconductor layer 120, the ratio of In to Al or Ga may increase in a direction toward the active layer 140. In other words, the Al (1-x) In x N layers 132 and the In y Ga (1-y) N layers 134 of the electron deceleration layer 130 are formed in the N-type semiconductor layer 120. The band gap energy may be gradually decreased in the direction toward the active layer 140.

Therefore, the LED according to another embodiment of the present invention may include the electron deceleration layer 130 between the N-type semiconductor layer 120 and the active layer 140. In this case, the electron deceleration layer 130 is provided with the Al (1-x) In x N layer 132 and the In y Ga (1-y) N layer 134 are alternately provided with each other, respectively The content of In for Al is 19 to 31% and the content of In for Ga is greater than 0 and less than 0.15%, and may be close to the N-type semiconductor layer 120. The lattice constant of the same or similar to the lattice constant of the N-type semiconductor layer 120, and the closer to the active layer 140, the lattice constant of the same or similar to the lattice constant of the well layer of the active layer 140 It may be provided to have.

In addition, the Al (1-x) In x N layers 132 of the electron deceleration layer 130 may have a layer closest to the N-type semiconductor layer 120 compared to a layer closest to the active layer 140. The band gap energy is high, and layers in the middle thereof may be provided to be gradually lowered from the N-type semiconductor layer 120 toward the active layer 140, and the in y ga of the electron deceleration layer 130 may be provided. (1-y) The N layers 134 have a higher band gap energy than the layer closest to the N-type semiconductor layer 120 compared to the layer closest to the active layer 140, and the layers in the middle of the It may be provided to be lowered step by step toward the active layer 140 in the type semiconductor layer 120.

Therefore, the light emitting diode according to another embodiment of the present invention may have a structure in which the spreading uniformity of electrons in the horizontal direction is improved. As described above, the electrons injected from the N-type semiconductor layer 120 have low potential energy at the interface between the N-type semiconductor layer 120 and the electron deceleration layer 130, and thus, the 2DEG 122 has a high concentration of electrons. This is because the shape spreading horizontally in the N-type semiconductor layer 120 occurs.

Further, the electronic speed reduction layer 130, the content of In in the case where the well layer of the active layer 140 made of In 0 .15 Ga 0 .85 N, the Al (1-x) N layer 19 to In x If the content of In is contained at 19%, the barrier layer of the active layer 140 and the lattice constant coincide to minimize the strain with the barrier layer, the content of In is contained at 31% When the well layer and the lattice constant of the active layer 140 match, the strain may be provided to minimize the strain with the well layer. However, since In tends to agglomerate with each other due to its physical properties, when the AlInN layer of the electron deceleration layer 130 is grown, even when the In is evenly applied, the In is bound to each other at a local site. The concentration of becomes high, which causes the top of the topical portion to strain more strongly than the surroundings, and this tendency leads to the active layer 140. When the strain in the active layer 140 is stronger than the surroundings, crystals in the active layer 140 are pressed to generate a piezo electric field, which causes a portion of low potential energy due to QCSE, and the carrier has electrons at the local site. This phenomenon occurs. As a result, the active layer 140 may increase the possibility of overlapping holes and electrons, thereby increasing light emission efficiency.

The present invention has been described above with reference to the above embodiments, but the present invention is not limited thereto. Those skilled in the art will appreciate that modifications and variations can be made without departing from the spirit and scope of the present invention and that such modifications and variations also fall within the present invention.

110 substrate 120 N-type semiconductor layer
130: electron deceleration layer 140: active layer
150: electron barrier layer 160: P-type semiconductor layer
170: transparent electrode layer 180: N-type electrode
190: P-type electrode

Claims (10)

Including a P-type semiconductor layer, an active layer and an N-type semiconductor layer,
An electron deceleration layer is provided between the active layer and the N-type semiconductor layer.
The active layer is formed of a quantum well structure in which the well layer and the barrier layer are repeatedly provided.
The electron deceleration layer comprises Al (1-x) In x N, wherein the light emitting diode.
The light emitting diode of claim 1, wherein a predetermined lattice constant of the electron deceleration layer in contact with the N-type semiconductor layer is the same as that of the N-type semiconductor layer.
The light emitting diode of claim 1, wherein a predetermined region of the electron deceleration layer in contact with the active layer has the same lattice constant as a well layer of the active layer.
The light emitting diode of claim 1, wherein the electron deceleration layer has a greater band gap energy than the active layer.
The method of claim 1, wherein the In content of the electron deceleration layer continuously increases as it approaches the active layer, or gradually decreases as it approaches a predetermined position between the N-type semiconductor layer and the active layer, and then the predetermined position. Subsequently, the light emitting diode is characterized in that it continuously grows, or grows stepwise as it approaches the active layer.
The method according to claim 1, wherein the electron deceleration layer further comprises In y Ga (1-y) N,
The light emitting diode of claim 1, wherein the Al (1-x) In x N layer and the In y Ga (1-y) N layer are alternately provided.
The light emitting diode of claim 6, wherein a layer including Al (1-x) In x N of the electron deceleration layer closest to the N-type semiconductor layer has the same lattice constant as the N-type semiconductor layer.
The light emitting diode of claim 6, wherein a layer including In y Ga (1-y) N of the electron deceleration layer closest to the active layer has a lattice constant equal to a well layer of the active layer.
The method according to claim 1, 5 or 6, the well layer of the active layer is made, including the Ga 0 .85 In 0 .15 N, the barrier layer of the active layer is a light emitting diode comprising the GaN.
The light emitting diode of claim 1, 5 or 6, further comprising an electron barrier layer between the active layer and the P-type semiconductor layer.
KR1020120048046A 2012-05-07 2012-05-07 Light emitting diode KR20130124718A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109659409A (en) * 2018-12-05 2019-04-19 湖北深紫科技有限公司 A kind of LED epitaxial structure and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109659409A (en) * 2018-12-05 2019-04-19 湖北深紫科技有限公司 A kind of LED epitaxial structure and preparation method thereof

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