CN103633207A - Epitaxial growth method for light emitting diode - Google Patents
Epitaxial growth method for light emitting diode Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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Abstract
The invention provides an epitaxial growth method for a light emitting diode. The method comprises the step of sequentially growing a buffer layer, a non-doped layer, an N-type doped layer, a quantum well light emitting layer and a P-type doped layer on a substrate, wherein the quantum well light emitting layer includes an indium gallium nitride InGaN quantum well layer and an aluminum gallium nitride AlGaN quantum barrier layer and is grown in a periodic growth mode. According to the epitaxial growth method, provided by the invention, for the light emitting diode, the quantum well light emitting layer is grown in a periodic growth mode, which enables the dislocation density of the quantum well light emitting layer to be reduced by one order of magnitude to 10<6>cm<-2>, greatly reduces the carrier overflow effect and improves the number of radiative recombination centers in the quantum well light emitting layer. The phenomenon of efficiency decline of the LED at high current density is effectively restrained, for example, the efficiency decline of the LED is no more than 5% when test is carried out with the use of high current under the condition of large size (1mm<2>).
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to a kind of epitaxial growth method of light-emitting diode.
Background technology
The wide-band gap material that the gallium nitride GaN of take is representative, is the third generation semi-conducting material after silicon Si and GaAs GaAs, is used for making the electronic devices such as light-emitting diode, laser, detector, high-frequency high-power transistor.
GaN prepares material as light source of new generation, in luminous field, has status special and that do not replace.The visible ray light-emitting zones such as GaN system material can be prepared from ultraviolet to purple light, blue light, green glow, and the introducing of indium gallium nitrogen InGaN makes GaN system material have outstanding performance in green glow section, the band gap of having filled up green glow is blank, impel GaN base LED to be widely used, strong on lighting field one tunnel, and be expected in recent years replace fluorescent lamp and become traditional lighting light source.
Two-step method low temperature growth buffer layer technology be pass into source reactant low-temperature epitaxy skim after, carry out high annealing, make low temperature buffer layer become low-density nucleus.Two-step method low temperature growth buffer layer technology can effectively be lowered into cuclear density, and its nucleation density can reach 2.0 * 10
8cm
-2.While merging as nuclear island, dislocation can be from the generation of interfaces merging, and extends to whole body material.
The LED that adopts traditional InGaN/GaN quantum well structure for mqw light emitting layer, the dislocation of resilient coating is amplified in InGaN/GaN quantum well region, damages the luminescent properties in the district of having chance with.In addition, due to the lower problem of quantum well barrier height, cause easily producing charge carrier spillover after electronics CongNXing district injection quantum well.The consequence that charge carrier overflows is that electronics and hole are compound outside the district of having chance with, and for non-radiative compound, has greatly affected the radiation recombination efficiency in quantum well, cause the decrease in efficiency problem of LED, and decrease in efficiency problem is particularly evident under high current density.Because illuminating LED major part is to use under high current density, thereby decrease in efficiency problem has greatly limited extension and the development of LED at lighting field.
Summary of the invention
The invention provides a kind of epitaxial growth method of light-emitting diode, object is to overcome above-mentioned existing methods defect, solve the dislocation density that exists in traditional quantum well structure large, under high current density, easily produce charge carrier and overflow, non-radiative compound quantity mainly with and the problem of LED decrease in efficiency.
The present invention realizes in the following manner:
The epitaxial growth method that the invention provides a kind of light-emitting diode, comprising:
On substrate, grown buffer layer, non-doped layer, N-type doped layer, mqw light emitting layer and P type doped layer successively, described mqw light emitting layer comprises indium gallium nitrogen InGaN quantum well layer and aluminum gallium nitride AlGaN quantum barrier layer, and described mqw light emitting layer adopts cycle growth pattern to grow.
In method as above, described substrate is sapphire, silicon, carborundum, glass, copper, nickel or chromium;
Described resilient coating comprises one or more in following material: gallium nitride GaN, indium nitride InN and aluminium nitride AlN.
In method as above, described aluminum gallium nitride AlGaN quantum barrier layer is GaN/AlxGayN/GaN layer structure, and described GaN/AlxGayN/GaN layer structure comprises: a GaN quantum barrier layer, AlxGayN quantum barrier layer and the 2nd GaN quantum barrier layer;
Wherein, x is between 0～1, and y is between 0～1.
In method as above, described mqw light emitting layer adopts period 1 growth pattern to grow, and comprising:
The described indium gallium nitrogen InGaN quantum well layer of growing;
The described GaN quantum barrier layer of growing;
The described AlxGayN quantum barrier layer of growing;
Described the 2nd GaN quantum barrier layer of growing.
In method as above, described mqw light emitting layer adopts X described period 1 growth pattern to grow;
Wherein, X is between 2～20.
In method as above, described aluminum gallium nitride AlGaN quantum barrier layer is GaN/AlmGanN superlattice structure, and described GaN/AlmGanN superlattice structure comprises: the 3rd GaN quantum barrier layer and AlmGanN layer;
Wherein, m is between 0～1, and n is between 0～1.
In method as above, described mqw light emitting layer employing growth pattern second round is grown, and comprising:
The described indium gallium nitrogen InGaN quantum well layer of growing;
Adopt the period 3 mode described AlGaN quantum barrier layer of growing, comprising:
Described the 3rd GaN quantum barrier layer of growing;
The described AlmGanN quantum barrier layer of growing.
In method as above, described AlGaN quantum barrier layer adopts Y described period 3 growth pattern to grow;
Wherein, Y is between 2～20.
In method as above, described mqw light emitting layer adopt Z time described second round growth pattern grow;
Wherein, Z is between 2～20.
In method as above, the energy band diagram indention of described AlGaN quantum barrier layer distributes.
The present invention has following outstanding advantages:
The epitaxial growth method of light-emitting diode provided by the invention, adopts cycle growth pattern grown quantum trap luminescent layer, makes the dislocation density of mqw light emitting layer can reduce an order of magnitude to 10
6cm
-2, greatly reduce charge carrier and overflow effect, improve the radiation recombination centric quantity in mqw light emitting layer, under high current density, the decrease in efficiency phenomenon of LED is effectively suppressed, for example (1mm under large scale
2) use high-current test, the decrease in efficiency of LED is no more than 5%.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of an embodiment of epitaxial growth method of light-emitting diode provided by the invention;
Fig. 2 is for adopting the structural representation of the mqw light emitting layer of GaN/AlxGayN/GaN layer structure;
Fig. 3 adopts the energy band diagram of the mqw light emitting layer of GaN/AlxGayN/GaN layer structure shown in Fig. 2;
Fig. 4 is for adopting the structural representation of the mqw light emitting layer of GaN/AlmGanN superlattice structure;
Fig. 5 adopts the energy band diagram of the mqw light emitting layer of GaN/AlmGanN superlattice structure shown in Fig. 4.
Embodiment
Below by specific embodiment and accompanying drawing, technical scheme of the present invention is described in further detail.
Fig. 1 is the schematic flow sheet of an embodiment of epitaxial growth method of light-emitting diode provided by the invention.As shown in Figure 1, the method specifically can comprise:
S101, on substrate, grown buffer layer, non-doped layer, N-type doped layer, mqw light emitting layer and P type doped layer successively, mqw light emitting layer comprises indium gallium nitrogen InGaN quantum well layer and aluminum gallium nitride AlGaN quantum barrier layer, mqw light emitting layer adopts cycle growth pattern to grow.
Concrete, in the present embodiment, substrate is specifically as follows sapphire, silicon, carborundum, glass, copper, nickel or chromium etc., and resilient coating specifically can comprise one or more in following material: gallium nitride GaN, indium nitride InN and aluminium nitride AlN.Can adopt existing the whole bag of tricks, metal organic chemical vapor deposition (Metal-Organic Chemical Vapor Deposition for example, abbreviation MOCVD), molecular beam epitaxy (Molecular beam epitaxy, abbreviation MBE), hydride gas-phase epitaxy (Hydride Vapor Phase Epitaxy, be called for short HVPE), at Grown resilient coating, non-doped layer, N-type doped layer and P type doped layer, mqw light emitting layer adopts cycle growth pattern to grow, and the energy band diagram indention of AlGaN quantum barrier layer is distributed.
As a kind of feasible execution mode, AlGaN quantum barrier layer is specifically as follows GaN/AlxGayN/GaN layer structure, and this GaN/AlxGayN/GaN layer structure comprises: a GaN quantum barrier layer, AlxGayN quantum barrier layer and the 2nd GaN quantum barrier layer; Wherein, x is between 0～1, and y is between 0～1.
The mqw light emitting layer that adopts GaN/AlxGayN/GaN layer structure, can adopt a period 1 growth pattern to grow, and the mqw light emitting layer of generation comprises one-period, and this process is specially:
S1011, growth indium gallium nitrogen InGaN quantum well layer;
S1012, the GaN quantum barrier layer of growing;
S1013, growth AlxGayN quantum barrier layer;
S1014, the 2nd GaN quantum barrier layer of growing.
Wherein, the thickness of AlxGayN quantum barrier layer can be 0～50nm, and the thickness of a GaN quantum barrier layer can be 0～50nm, and the thickness of the 2nd GaN quantum barrier layer can be 0～50nm, the thickness of the thickness of the one GaN quantum barrier layer and the 2nd GaN quantum barrier layer can be identical, also can be not identical.
Adopt the mqw light emitting layer of GaN/AlxGayN/GaN layer structure, can also adopt X(X between 2～20) inferior period 1 growth pattern as above grows, after step S1014, repeated execution of steps S1011-S1014(X-1) inferior, the mqw light emitting layer of generation comprises X cycle.
As another feasible execution mode, AlGaN quantum barrier layer is specifically as follows GaN/AlmGanN superlattice structure, and this GaN/AlmGanN superlattice structure comprises: the 3rd GaN quantum barrier layer and AlmGanN layer; Wherein, m is between 0～1, and n is between 0～1.
Adopt the mqw light emitting layer of GaN/AlmGanN superlattice structure, can adopt one time second round growth pattern grow, the mqw light emitting layer of generation comprises one-period, this process is specially:
S201, growth indium gallium nitrogen InGaN quantum well layer;
S202, adopts the period 3 mode AlGaN quantum barrier layer of growing.
Wherein, in step S202, AlGaN quantum barrier layer can adopt a period 3 mode to grow, and the AlGaN quantum barrier layer of generation comprises one-period, and this process is specially:
S2021, growth regulation three GaN quantum barrier layers;
S2022, growth AlmGanN quantum barrier layer.
Wherein, the thickness of the 3rd GaN quantum barrier layer can be 0～10nm, and the thickness of AlmGanN quantum barrier layer can be 0～10nm.
In step S202, AlGaN quantum barrier layer can also adopt Y(Y between 2～20) inferior period 3 mode as above grows, after step S2022, repeated execution of steps S2021-S2022(Y-1) inferior, the AlGaN quantum barrier layer of generation comprises Y cycle.
Adopt the mqw light emitting layer of GaN/AlmGanN superlattice structure, can also adopt Z(Z between 2～20) inferior second round as above growth pattern grow, after step S202, repeated execution of steps S201-S202(Z-1) inferior, the mqw light emitting layer of generation comprises Z cycle.
The epitaxial growth method of the light-emitting diode that the present embodiment provides, adopts cycle growth pattern grown quantum trap luminescent layer, makes the dislocation density of mqw light emitting layer can reduce an order of magnitude to 10
6cm
-2, greatly reduce charge carrier and overflow effect, improve the radiation recombination centric quantity in mqw light emitting layer, under high current density, the decrease in efficiency phenomenon of LED is effectively suppressed, for example (1mm under large scale
2) use high-current test, the decrease in efficiency of LED is no more than 5%.
Below by two specific embodiments, respectively to adopting the LED epitaxial process of GaN/AlxGayN/GaN layer structure and GaN/AlmGanN superlattice structure to be described in detail.
Specific embodiment one:
Fig. 2 is for adopting the structural representation schematic diagram of the mqw light emitting layer of GaN/AlxGayN/GaN layer structure.Fig. 3 adopts the energy band diagram of the mqw light emitting layer of GaN/AlxGayN/GaN layer structure shown in Fig. 2.The epitaxial growth method of Light-Emitting Diode the present embodiment being provided below in conjunction with Fig. 2 and Fig. 3 is elaborated, and the method comprises:
1, MOCVD reaction chamber temperature rises to 520 ℃, and pressure is 600 millibars of mbar, passes into trimethyl gallium (150ml/min) and ammonia NH simultaneously
33 minutes, on graphic sapphire (Patterned Sapphire Substrate is called for short PSS) substrate, react, form the GaN resilient coating of 25nm;
2, through 10 minutes, temperature is elevated to 1030 ℃, Pressure Drop is to 500mbar, GaN resilient coating generation decomposition reaction, and after GaN resilient coating decomposes, at substrate surface diffusive migration, and to form density be 2.3 * 10
6cm
-2the nucleation island of the GaN of left and right;
3, temperature is maintained to 1030 ℃, pressure keeps 500mbar, passes into hydrogen, trimethyl gallium (200ml/min) and NH
340 minutes, gallium nitride nucleus formed and grows up in gold grain bottom, and GaN longitudinal growth, forms three-dimensional GaN island structure;
4, reaction chamber temperature is increased to 1050 ℃, passes into hydrogen, trimethyl gallium (280ml/min) and ammonia 30 minutes, and pressure keeps 200mbar, and gallium nitride nucleus becomes cross growth pattern by longitudinally growing up, the thick non-Doped GaN layer of growth one deck 1200nm;
5, temperature maintains 1050 ℃, and pressure maintains 200mbar, passes into hydrogen, trimethyl gallium (300ml/min) and ammonia 40 minutes, and mixes silane.Wherein V/III ratio is 1350, the N-type GaN layer that growth a layer thickness is 1500nm, and the doping content of N-type GaN layer is 1 * 10
19cm
-3;
6, reaction chamber temperature is down to 800 ℃, passes into nitrogen, triethyl-gallium (120ml/min), triethylindium (400ml/min) and ammonia, growing InGaN quantum well layer 21 under nitrogen atmosphere, corresponding potential well 31, growth time is 1 minute and 30 seconds, thickness is 3nm;
7, reaction chamber temperature is down to 880 ℃, passes into nitrogen, triethyl-gallium (400ml/min) and ammonia, the GaN quantum barrier layer 22 of growing under nitrogen atmosphere, corresponding potential barrier 32, growth time is 30 seconds, thickness is 4nm; Pass into subsequently trimethyl aluminium (50ml/min), the time is 1 minute simultaneously, the AlxGayN quantum barrier layer 23 that growth thickness is 8nm, corresponding potential barrier 33; Finally trimethyl aluminium is closed, continued growth 30 seconds, obtaining thickness is the 2nd GaN quantum barrier layer 24 of 4nm, corresponding potential barrier 34,, this three-decker forms the AlGaN quantum barrier layer of GaN/AlxGayN/GaN layer structure, and wherein the Al content in AlxGayN is 15%;
8, recirculation repetition the 6th step and the 7th step are X-1 time, and quantum well layer and the quantum barrier layer of generation and 21-24 same structure, as 25-28, form the InGaN/(GaN/AlxGayN/GaN in X cycle) mqw light emitting layer structure;
9, on this basis the temperature of reative cell is increased to 1000 ℃, passes into hydrogen, trimethyl gallium (180ml/min) and ammonia 20 minutes, and mix magnesium addition, use two luxuriant magnesium metal organic sources; The thickness of this layer is 400nm, and the doping content of Mg is 1 * 10
19cm
-3, form the P type doped layer of this structure;
All structures have formed InGaN/(GaN1/AlxGayN/GaN2 together above) LED of mqw light emitting layer structure, this structure forms as shown in Figure 3 zigzag can band.
The epitaxial growth method of the light-emitting diode that the present embodiment provides, adopts cycle growth pattern grown quantum trap luminescent layer, makes the dislocation density of mqw light emitting layer can reduce an order of magnitude to 10
6cm
-2, greatly reduce charge carrier and overflow effect, improve the radiation recombination centric quantity in mqw light emitting layer, under high current density, the decrease in efficiency phenomenon of LED is effectively suppressed, for example (1mm under large scale
2) use high-current test, the decrease in efficiency of LED is no more than 5%.
Specific embodiment two:
Fig. 4 is for adopting the structural representation schematic diagram of the mqw light emitting layer of GaN/AlmGanN superlattice structure.Fig. 5 adopts the energy band diagram of the mqw light emitting layer of GaN/AlmGanN superlattice structure shown in Fig. 4.The epitaxial growth method of Light-Emitting Diode the present embodiment being provided below in conjunction with Fig. 4 and Fig. 5 is elaborated, and the method comprises:
1, MOCVD reaction chamber temperature rises to 520 ℃, and pressure is 600mbar, passes into trimethyl gallium (150ml/min) and NH simultaneously
33 minutes, on graphic sapphire PSS substrate, react, form the GaN resilient coating of 25nm;
2, through 10 minutes, temperature is elevated to 1030 ℃, Pressure Drop is to 500mbar, GaN resilient coating generation decomposition reaction, and after GaN resilient coating decomposes, at substrate surface diffusive migration, and to form density be 2.3 * 10
6cm
-2the nucleation island of the GaN of left and right;
3, temperature is maintained to 1030 ℃, pressure keeps 500mbar, passes into hydrogen, trimethyl gallium (200ml/min) and NH340 minute, and gallium nitride nucleus forms and grows up in gold grain bottom, and GaN longitudinal growth, forms three-dimensional GaN island structure;
4, reaction chamber temperature is increased to 1050 ℃, passes into hydrogen, trimethyl gallium (280ml/min) and ammonia 30 minutes, and pressure keeps 200mbar, and gallium nitride nucleus becomes cross growth pattern by longitudinally growing up, the thick non-Doped GaN layer of growth one deck 1200nm;
5, temperature maintains 1050 ℃, and pressure maintains 200mbar, passes into hydrogen, trimethyl gallium (300ml/min) and ammonia 40 minutes, and mixes silane.Wherein V/III ratio is 1350, the N-type GaN layer that growth a layer thickness is 1500nm, and the doping content of N-type GaN layer is 1 * 10
19cm
-3;
6, reaction chamber temperature is down to 800 ℃, passes into nitrogen, triethyl-gallium (120ml/min), triethylindium (400ml/min) and ammonia, growing InGaN quantum well layer 41 under nitrogen atmosphere, corresponding potential well 51, growth time is 1 minute and 30 seconds, thickness is 3nm;
7, reaction chamber temperature is down to 880 ℃, passes into nitrogen, triethyl-gallium (400ml/min) and ammonia, growth regulation three GaN quantum barrier layers 42 under nitrogen atmosphere, corresponding potential barrier 52, growth time is 8 seconds, thickness is 1nm; Pass into subsequently trimethyl aluminium (50ml/min), the time is 15 seconds simultaneously, the AlmGanN quantum barrier layer 43 that growth thickness is 2nm, and corresponding potential barrier 53, wherein, in AlmGanN, Al content is 15%;
8, recirculation repeats the 7th step Y-1 time, generates and the superlattice quantum barrier layer of 42 and 43 same structures, as 44 and 45;
9, recirculation repeats the 6th step, the 7th step and the 8th step Z-1 time, generate and 41/(42/43 ... 44/45) quantum well layer of same structure and quantum barrier layer, as 46/(47/48 ... 49/50), form the InGaN/(GaN/AlmGanN in Z cycle) mqw light emitting layer structure;
10, on this basis the temperature of reative cell is increased to 1000 ℃, passes into hydrogen, trimethyl gallium (180ml/min) and ammonia 20 minutes, and mix magnesium addition, use two luxuriant magnesium metal organic sources; The thickness of this layer is 400nm, and the doping content of Mg is 1 * 1019cm-3, forms the P type doped layer of this structure;
All structures have formed the LED of InGaN/ (GaN/AlmGanN superlattice) mqw light emitting layer structure together above, and this structure forms zigzag can being with as shown in Figure 5.
The epitaxial growth method of the light-emitting diode that the present embodiment provides, adopts cycle growth pattern grown quantum trap luminescent layer, makes the dislocation density of mqw light emitting layer can reduce an order of magnitude to 10
6cm
-2, greatly reduce charge carrier and overflow effect, improve the radiation recombination centric quantity in mqw light emitting layer, under high current density, the decrease in efficiency phenomenon of LED is effectively suppressed, for example (1mm under large scale
2) use high-current test, the decrease in efficiency of LED is no more than 5%.
Finally it should be noted that: each embodiment, only in order to technical scheme of the present invention to be described, is not intended to limit above; Although the present invention is had been described in detail with reference to aforementioned each embodiment, those of ordinary skill in the art is to be understood that: its technical scheme that still can record aforementioned each embodiment is modified, or some or all of technical characterictic is wherein equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.
Claims (10)
1. an epitaxial growth method for light-emitting diode, is characterized in that, comprising:
On substrate, grown buffer layer, non-doped layer, N-type doped layer, mqw light emitting layer and P type doped layer successively, described mqw light emitting layer comprises indium gallium nitrogen InGaN quantum well layer and aluminum gallium nitride AlGaN quantum barrier layer, and described mqw light emitting layer adopts cycle growth pattern to grow.
2. method according to claim 1, is characterized in that, described substrate is sapphire, silicon, carborundum, glass, copper, nickel or chromium;
Described resilient coating comprises one or more in following material: gallium nitride GaN, indium nitride InN and aluminium nitride AlN.
3. method according to claim 1, it is characterized in that, described aluminum gallium nitride AlGaN quantum barrier layer is GaN/AlxGayN/GaN layer structure, and described GaN/AlxGayN/GaN layer structure comprises: a GaN quantum barrier layer, AlxGayN quantum barrier layer and the 2nd GaN quantum barrier layer;
Wherein, x is between 0～1, and y is between 0～1.
4. method according to claim 3, is characterized in that, described mqw light emitting layer adopts period 1 growth pattern to grow, and comprising:
The described indium gallium nitrogen InGaN quantum well layer of growing;
The described GaN quantum barrier layer of growing;
The described AlxGayN quantum barrier layer of growing;
Described the 2nd GaN quantum barrier layer of growing.
5. method according to claim 4, is characterized in that, described mqw light emitting layer adopts X described period 1 growth pattern to grow;
Wherein, X is between 2～20.
6. method according to claim 1, is characterized in that, described aluminum gallium nitride AlGaN quantum barrier layer is GaN/AlmGanN superlattice structure, and described GaN/AlmGanN superlattice structure comprises: the 3rd GaN quantum barrier layer and AlmGanN layer;
Wherein, m is between 0～1, and n is between 0～1.
7. method according to claim 6, is characterized in that, described mqw light emitting layer employing growth pattern second round is grown, and comprising:
The described indium gallium nitrogen InGaN quantum well layer of growing;
Adopt the period 3 mode described AlGaN quantum barrier layer of growing, comprising:
Described the 3rd GaN quantum barrier layer of growing;
The described AlmGanN quantum barrier layer of growing.
8. method according to claim 7, is characterized in that, described AlGaN quantum barrier layer adopts Y described period 3 growth pattern to grow;
Wherein, Y is between 2～20.
9. method according to claim 8, is characterized in that, described mqw light emitting layer adopt Z time described second round growth pattern grow;
Wherein, Z is between 2～20.
10. according to the method described in claim 1-9 any one, it is characterized in that, the energy band diagram indention of described AlGaN quantum barrier layer distributes.
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