CN104091870B - The growing method of the LED with SQW barrier layer - Google Patents
The growing method of the LED with SQW barrier layer Download PDFInfo
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- CN104091870B CN104091870B CN201410369108.8A CN201410369108A CN104091870B CN 104091870 B CN104091870 B CN 104091870B CN 201410369108 A CN201410369108 A CN 201410369108A CN 104091870 B CN104091870 B CN 104091870B
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 230000004888 barrier function Effects 0.000 title claims abstract description 34
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- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 56
- 238000010792 warming Methods 0.000 claims description 23
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- 239000011777 magnesium Substances 0.000 description 44
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 44
- -1 TEGa Chemical compound 0.000 description 41
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 35
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
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- 238000005229 chemical vapour deposition Methods 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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Abstract
This application discloses the LED with SQW barrier layer, growing method and LED structure, the LED with SQW barrier layer, its structure is sequentially consisted of：Substrate, GaN cushions, undoped GaN layer, n-type GaN layer, luminescent layer MQW, p-type AlGaN layer, p-type GaN layer, luminescent layer MQW includes：InxGa(1‑x)N/InyGa(1‑y)N quantum well layers and InmGa(1‑m)N/AlnGa(1‑n)The combination of N quantum well layers, wherein, x=0.15~0.25, y=0.05~0.10；M=0.15~0.25, n=0.10~0.15.The present invention reduces spilling of the electronics in SQW, increases injection of the hole to SQW, improves the concentration of electronics and hole in SQW, increases device light emitting efficiency so that light output lifting about 8%.
Description
Technical field
The invention belongs to technical field of semiconductors, it is related to a kind of growing method of the LED with SQW barrier layer.
Background technology
Gallium nitride-based material, including InGaN, GaN, AlGaN alloy, are direct band-gap semicondictor, and band gap is from 1.8-
6.2eV continuously adjustabes, are that production shortwave grows tall with the premium properties such as direct band gap wide, strong chemical bond, high temperature resistant, anticorrosive
The ideal material of brightness light emitting device, ultraviolet light detector and high-temperature high-frequency microelectronic component, is widely used in full-color giant-screen
The fields such as display, LCD backlight, signal lamp, illumination.The making of domestic GaN base LED blue green light luminescent devices is related to luminescent layer
All it is the multiple quantum well layer composition formed using InGaN/GaN superlattices, traditional SQW can be with straight, the concentration of electronics
It is high, determine that electronics is excessive in the distribution of SQW the features such as mobility is high, the shortcoming for causing is that electronics easily leaks to P layers
Consumption hole, causes the implantation concentration in hole to reduce；The hole and opposite concentration of electronic characteristicses is low, mobility is low, injection efficiency is low,
Concentration of the hole in SQW is gradually successively decreased near n-layer quantum well layer near P layers of quantum well layer.
Publication No. discloses a kind of LED structure epitaxial growth containing superlattice layer for the patent document of CN103474539A
Method and its structure, its structure include：Substrate, gallium nitride base cushion, undoped gallium nitride layer, n-type gallium nitride layer, luminescent layer
MQW, p-type gallium nitride layer and p-type gallium nitride layer.Its growing method includes：Treatment substrate, low temperature growth buffer GaN layer, growth is not
The GaN layer of Si is mixed in doped gan layer, growth, the step of grow luminescent layer MQW, growing P-type AlGaN layer, growth P-type GaN layer,
Between growth luminescent layer MQW steps and growing P-type AlGaN layer step, including the step of growth InN/GaN superlattice layers, in temperature
It is 740~770 DEG C to spend, and in the reative cell of 100mbar pressure, using hydrogen and/or nitrogen as carrier gas, growth InN/GaN surpasses
Lattice layer, every layer of InN thickness is 1~2nm, and every layer of GaN thickness is 1~nm, and the periodicity of the InN/GaN superlattice layers is 10
~15 layers, gross thickness is 20-30nm.The epitaxial growth method smoothly transits to AlGaN using the lattice coefficient of InN from GaN, subtracts
Small stress, increases the hole concentration of SQW, but has the disadvantage that means are complex.
The content of the invention
It is an object of the invention to overcome above-mentioned deficiency, there is provided a kind of LED with SQW barrier layer, it passes through energy
Improve the injection in hole with design, prevent electronics excessive.
To achieve these goals, the technical solution adopted by the present invention is：A kind of LED with SQW barrier layer,
Its structure is sequentially consisted of：Substrate, GaN cushions, undoped GaN layer, n-type GaN layer, luminescent layer MQW, p-type AlGaN
Layer, p-type GaN layer, it is characterised in that
Described luminescent layer MQW includes：InxGa(1-x)N/InyGa(1-y)N quantum well layers and InmGa(1-m)N/AlnGa(1-n)N
The combination of quantum well layer, wherein, x=0.15~0.25, y=0.05~0.10；M=0.15~0.25, n=0.10~0.15.
Preferably, wherein,
Described InxGa(1-x)N/InyGa(1-y)The periodicity of N quantum well layers is 5~6, wherein, InxGa(1-x)The In of N mixes
Miscellaneous concentration is 1E+20~3E+20atom/cm3, InyGa(1-y)The In doping concentrations of N are 1E+18~2E+18atom/cm3；
Described InmGa(1-m)N/AlnGa(1-n)The periodicity of N quantum well layers is 5~6, wherein, InmGa(1-m)The In of N mixes
Miscellaneous concentration is 1E+20~3E+20atom/cm3, AlnGa(1-n)The Al doping concentrations 1E+18-2E+18atom/cm of N3。
Preferably, wherein,
Described InxGa(1-x)N/InyGa(1-y)N quantum well layers, wherein, InxGa(1-x)The thickness of N is 2.8~3.5nm；
InyGa(1-y)The thickness of N is 10~15nm；
Described InmGa(1-m)N/AlnGa(1-n)N quantum well layers, wherein, InmGa(1-m)The thickness of N is 2.8~3.5nm,
AlnGa(1-n)The thickness of N is 10~15nm.
To achieve these goals, the technical scheme that also uses of the present invention for：A kind of LED with SQW barrier layer
Growing method, successively including treatment substrate, growing low temperature GaN cushions grow undoped GaN layer, and growing n-type GaN layer is raw
The step of luminescent layer MQW long, growth p-type AlGaN layer, growth p-type GaN layer, it is characterised in that
The step of described growth luminescent layer MQW, includes：Growth InxGa(1-x)N/InyGa(1-y)N quantum well layers with
InmGa(1-m)N/AlnGa(1-n)The combination of N quantum well layers, wherein, x=0.15~0.25, y=0.05~0.10；M=0.15~
0.25, n=0.10~0.15.
Preferably, wherein,
Described growth InxGa(1-x)N/InyGa(1-y)The periodicity of N quantum well layers is 5~6, wherein, InxGa(1-x)N's
In doping concentrations are 1E+20~3E+20atom/cm3, thickness is 2.8~3.5nm；InyGa(1-y)The In doping concentrations of N are 1E+
18~2E+18atom/cm3, thickness is 10~15nm.
Preferably, wherein,
Described growth InmGa(1-m)N/AlnGa(1-n)The periodicity of N quantum well layers is 5~6, wherein, InmGa(1-m)N's
In doping concentrations are 1E+20~3E+20atom/cm3, thickness is 2.8~3.5nm, AlnGa(1-n)The Al doping concentrations 1E+18- of N
2E+18atom/cm3, thickness is 10~15nm.
Preferably, wherein,
Described growth InxGa(1-x)N/InyGa(1-y)The reaction cavity pressure of N quantum well layers is in 300~400mbar, temperature
At 700~750 DEG C；
Described growth InmGa(1-m)N/AlnGa(1-n)The reaction cavity pressure of N quantum well layers is in 300~400mbar, temperature
At 700~750 DEG C.
Preferably, wherein,
The reaction cavity pressure of substrate is processed in 150~200mbar, temperature is at 1000~1100 DEG C；
The reaction cavity pressure of GaN cushions is grown in 300~600mbar, and temperature is at 550~750 DEG C；
The reaction cavity pressure of undoped GaN layer is grown in 200~400mbar, and temperature is at 1100~1300 DEG C；
The reaction cavity pressure of p-type AlGaN layer is grown in 200~300mbar, and temperature is at 900~1000 DEG C；
The reaction cavity pressure of p-type GaN layer is grown in 600~900mbar, and temperature is at 1000~1100 DEG C.
Preferably, wherein,
The thickness of described low temperature GaN buffer is 50nm；
The thickness of described undoped GaN layer is 2~4 μm；
Described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 2~4 μm；
Described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations be 5E+18~
1E+19atom/cm3, thickness is 20~50nm；
Described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 100~200nm.
To achieve these goals, the technical scheme that also uses of the present invention for：A kind of LED structure, including substrate, are arranged on
Epitaxial wafer on the substrate, and it is arranged on P electrode and N electrode on the epitaxial wafer, it is characterised in that described extension
Piece is the epitaxial wafer any one of claims 1 to 3.
Beneficial effects of the present invention are：
First, luminescent layer SQW barrier layer is designed as In by traditional InGaN/GaN super crystal lattice materialsmGa(1-m)N/
AlnGa(1-n)The combination of N quantum well layers, reduces spilling of the electronics in SQW, increases injection of the hole to SQW, improves electricity
Son and concentration of the hole in SQW, increase device light emitting efficiency so that light output lifting about 8%.
Second, do not change potential well, potential barrier GaN becomes the raising of AlGaN conduction bands, can suitably reduce the mobility of electronics so that
The electronics of potential well will not leak to p layers of consumption hole due to excessive；The reduction of movement of hole potential barrier, beneficial to the motion in hole,
Improve the injection in hole.
Brief description of the drawings
Accompanying drawing described herein is used for providing further understanding of the present application, constitutes the part of the application, this Shen
Schematic description and description please does not constitute the improper restriction to the application for explaining the application.In the accompanying drawings：
Fig. 1 is the structural representation of the LED with SQW barrier layer of the invention；
Fig. 2 is the energy band schematic diagram of SQW barrier layer of the invention；
Fig. 3 is the LED luminance test data distribution schematic diagram of the experiment that the present invention is compared with the prior art.
Reference is illustrated：
100-substrate, 102-low temperature GaN buffer, 103-undoped GaN layer
104-n-type GaN layer, 105-luminescent layer MQW, 107-p-type AlGaN layer
109-p-type GaN layer, 1051-InxGa(1-x)N/InyGa(1-y)N quantum well layers
1052—InmGa(1-m)N/AlnGa(1-n)The combination of N quantum well layers
Specific embodiment
Some vocabulary have such as been used to censure specific components in the middle of specification and claim.Those skilled in the art should
It is understood that hardware manufacturer may call same component with different nouns.This specification and claims are not with name
The difference of title is used as distinguishing the mode of component, but the difference with component functionally is used as the criterion distinguished.Such as logical
The "comprising" of piece specification and claim mentioned in is an open language, therefore should be construed to " include but do not limit
In "." substantially " refer to that in receivable error range, those skilled in the art can solve described in the range of certain error
Technical problem, basically reaches the technique effect.Specification subsequent descriptions are to implement the better embodiment of the application, so described
Description is for the purpose of the rule for illustrating the application, to be not limited to scope of the present application.The protection domain of the application
It is defined when depending on the appended claims person of defining.
Embodiment 1
The present invention is using metal-organic chemical vapor deposition equipment method (MOCVD, Metalorganic Chemical Vapor
Deposition) grow, it is preferable that substrate selects the sapphire of (0001) crystal orientation, high-purity H2Or high-purity N2Or high-purity H2With it is high-purity
N2Mixed gas as carrier gas, metal organic source and nitrogen source are respectively trimethyl gallium (TMGa), trimethyl indium (TMIn), three second
Base gallium (TEGa), trimethyl aluminium (TMAl) and ammonia (NH3), n-type dopant is silane (SiH4), p-type dopant is two luxuriant magnesium
(Cp2Mg)。
The growing method of the described LED with SQW barrier layer, carries out following growth step successively：
A. high-temperature process Sapphire Substrate 5 minutes under 50L~60L hydrogen atmospheres are passed through；
B. growing low temperature GaN cushions on a sapphire substrate；
C. continued propagation undoped GaN layer；
D. growing n-type GaN layer；
E. reaction cavity pressure maintains 300mbar, and 700 DEG C of low temperature is passed through NH3, the thickness of TEGa, TMIn growth doping In
It is the In of 2.8nmxGa(1-x)N layers (x=0.15~0.25), In doping concentrations 1E+20~3E+20atom/cm3, it is warming up to 800
DEG C it is passed through NH3, TEGa, TMIn growth thickness are the In of 10nmyGa(1-y)N layers (y=0.05~0.10), In doping concentrations 1E+18
~2E+18atom/cm3；InxGa(1-x)N/InyGa(1-y)N quantum well layers periodicity is 5；
Then, reaction cavity pressure maintains 300mbar, and 700 DEG C of low temperature is passed through NH3, TEGa, TMIn growth doping In's
Thickness is the In of 2.8nmmGa(1-m)N layers (m=0.15-0.25), In doping concentrations 1E+20~3E+20atom/cm3, it is warming up to
800 DEG C, it is passed through NH3, TEGa, TMAl growth thickness are the Al of 10nmnGa(1-n)N layers (n=0.10~0.15), Al doping concentrations
1E+18~2E+18atom/cm3；InmGa(1-m)N/AlnGa(1-n)N quantum well layers periodicity is 5；
F. growing P-type AlGaN layer；
G. continued propagation p-type GaN layer；
H. 700~800 DEG C are cooled to, 20~30min is incubated, then cooling in stove.
Preferably, in 150mbar, temperature is at 1000 DEG C for the reaction cavity pressure for the treatment of substrate.
Preferably, in 300mbar, temperature is at 550 DEG C for the reaction cavity pressure of growth GaN cushions.
Preferably, in 200mbar, temperature is at 1100 DEG C for the reaction cavity pressure of growth undoped GaN layer.
Preferably, in 200mbar, temperature is at 900 DEG C for the reaction cavity pressure of growth p-type AlGaN layer.
Preferably, in 600mbar, temperature is at 1000 DEG C for the reaction cavity pressure of growth p-type GaN layer.
Preferably, the thickness of described low temperature GaN buffer is 50nm.
Preferably, the thickness of described undoped GaN layer is 2 μm.
Preferably, described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 2 μm.
Preferably, described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations are
5E+18~1E+19atom/cm3, thickness is 20nm.
Preferably, described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 100nm.
The present embodiment also provides a kind of LED structure, including substrate, sets epitaxial wafer over the substrate, and set
P electrode and N electrode on the epitaxial wafer, it is characterised in that described epitaxial wafer is the epitaxial wafer with SQW barrier layer.
Embodiment 2
The growing method of the present embodiment and a of embodiment 1, b, c, d, f, g, h growth step are identical, step e：
Reaction cavity pressure maintains 400mbar, and 750 DEG C of low temperature is passed through NH3, TEGa, TMIn growth doping In thickness be
The In of 3.5nmxGa(1-x)N layers (x=0.15~0.25), In doping concentrations 1E+20~3E+20atom/cm3, it is warming up to 850 DEG C
It is passed through NH3, TEGa, TMIn growth thickness are the In of 15nmyGa(1-y)N layers (y=0.05~0.10), In doping concentrations 1E+18~
2E+18atom/cm3；InxGa(1-x)N/InyGa(1-y)N quantum well layers periodicity is 5.
Then, reaction cavity pressure maintains 400mbar, and 700~750 DEG C of low temperature is passed through NH3, TEGa, TMIn growth doping
The thickness of In is the In of 3.5nmmGa(1-m)N layers (m=0.15-0.25), In doping concentrations 1E+20~3E+20atom/cm3, rise
Temperature is passed through NH to 850 DEG C3, TEGa, TMAl growth thickness are the Al of 15nmnGa(1-n)N layers (n=0.10~0.15), Al doping
Concentration 1E+18~2E+18atom/cm3；InmGa(1-m)N/AlnGa(1-n)N quantum well layers periodicity is 5.
Preferably, in 200mbar, temperature is at 1100 DEG C for the reaction cavity pressure for the treatment of substrate.
Preferably, in 600mbar, temperature is at 750 DEG C for the reaction cavity pressure of growth GaN cushions.
Preferably, in 400mbar, temperature is at 1300 DEG C for the reaction cavity pressure of growth undoped GaN layer.
Preferably, in 300mbar, temperature is at 1000 DEG C for the reaction cavity pressure of growth p-type AlGaN layer.
Preferably, in 900mbar, temperature is at 1100 DEG C for the reaction cavity pressure of growth p-type GaN layer.
Preferably, the thickness of described low temperature GaN buffer is 50nm.
Preferably, the thickness of described undoped GaN layer is 4 μm.
Preferably, described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 4 μm.
Preferably, described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations are
5E+18~1E+19atom/cm3, thickness is 50nm.
Preferably, described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 200nm.
The present embodiment also provides a kind of LED structure, including substrate, sets epitaxial wafer over the substrate, and set
P electrode and N electrode on the epitaxial wafer, it is characterised in that described epitaxial wafer is the epitaxial wafer with SQW barrier layer.
Embodiment 3
The growing method of the present embodiment and a of embodiment 1, b, c, d, f, g, h growth step are identical, step e：
Reaction cavity pressure maintains 300mbar, and 750 DEG C of low temperature is passed through NH3, TEGa, TMIn growth doping In thickness be
The In of 2.8nmxGa(1-x)N layers (x=0.15~0.25), In doping concentrations 1E+20~3E+20atom/cm3, it is warming up to 850 DEG C
It is passed through NH3, TEGa, TMIn growth thickness are the In of 10nmyGa(1-y)N layers (y=0.05~0.10), In doping concentrations 1E+18~
2E+18atom/cm3；InxGa(1-x)N/InyGa(1-y)N quantum well layers periodicity is 6.
Then, reaction cavity pressure maintains 300mbar, and 750 DEG C of low temperature is passed through NH3, TEGa, TMIn growth doping In's
Thickness is the In of 2.8nmmGa(1-m)N layers (m=0.15-0.25), In doping concentrations 1E+20~3E+20atom/cm3, it is warming up to
850 DEG C, it is passed through NH3, TEGa, TMAl growth thickness are the Al of 10-15nmnGa(1-n)N layers (n=0.10~0.15), Al doping is dense
Degree 1E+18~2E+18atom/cm3；InmGa(1-m)N/AlnGa(1-n)N quantum well layers periodicity is 5.
Preferably, in 155mbar, temperature is at 1000 DEG C for the reaction cavity pressure for the treatment of substrate.
Preferably, in 350mbar, temperature is at 550 DEG C for the reaction cavity pressure of growth GaN cushions.
Preferably, in 250mbar, temperature is at 1100 DEG C for the reaction cavity pressure of growth undoped GaN layer.
Preferably, in 250mbar, temperature is at 900 DEG C for the reaction cavity pressure of growth p-type AlGaN layer.
Preferably, in 650mbar, temperature is at 1000 DEG C for the reaction cavity pressure of growth p-type GaN layer.
Preferably, the thickness of described low temperature GaN buffer is 50nm.
Preferably, the thickness of described undoped GaN layer is 2.5 μm.
Preferably, described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 2.5 μ
m。
Preferably, described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations are
5E+18~1E+19atom/cm3, thickness is 28nm.
Preferably, described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 120nm.
The present embodiment also provides a kind of LED structure, including substrate, sets epitaxial wafer over the substrate, and set
P electrode and N electrode on the epitaxial wafer, it is characterised in that described epitaxial wafer is the epitaxial wafer with SQW barrier layer.
Embodiment 4
The growing method of the present embodiment is identical with the growth step of embodiment 1.
Preferably, in 190mbar, temperature is at 1030 DEG C for the reaction cavity pressure for the treatment of substrate.
Preferably, in 330mbar, temperature is at 580 DEG C for the reaction cavity pressure of growth GaN cushions.
Preferably, in 230mbar, temperature is at 1130 DEG C for the reaction cavity pressure of growth undoped GaN layer.
Preferably, in 230mbar, temperature is at 930 DEG C for the reaction cavity pressure of growth p-type AlGaN layer.
Preferably, in 630mbar, temperature is at 1030 DEG C for the reaction cavity pressure of growth p-type GaN layer.
Preferably, the thickness of described low temperature GaN buffer is 50nm.
Preferably, the thickness of described undoped GaN layer is 2.7 μm.
Preferably, described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 2.7 μ
m。
Preferably, described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations are
5E+18~1E+19atom/cm3, thickness is 28nm.
Preferably, described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 110nm.
The present embodiment also provides a kind of LED structure, including substrate, sets epitaxial wafer over the substrate, and set
P electrode and N electrode on the epitaxial wafer, it is characterised in that described epitaxial wafer is the epitaxial wafer with SQW barrier layer.
Embodiment 5
The growing method of the present embodiment and a of embodiment 1, b, c, d, f, g, h growth step are identical, step e：
Reaction cavity pressure maintains 360mbar, and 710 DEG C of low temperature is passed through NH3, TEGa, TMIn growth doping In thickness be
The In of 2.9nmxGa(1-x)N layers (x=0.15~0.25), In doping concentrations 1E+20~3E+20atom/cm3, it is warming up to 820 DEG C
It is passed through NH3, TEGa, TMIn growth thickness are the In of 11nmyGa(1-y)N layers (y=0.05~0.10), In doping concentrations 1E+18~
2E+18atom/cm3；InxGa(1-x)N/InyGa(1-y)N quantum well layers periodicity is 5.
Then, reaction cavity pressure maintains 360mbar, and 710 DEG C of low temperature is passed through NH3, TEGa, TMIn growth doping In's
Thickness is the In of 2.9nmmGa(1-m)N layers (m=0.15-0.25), In doping concentrations 1E+20~3E+20atom/cm3, it is warming up to
820 DEG C, it is passed through NH3, TEGa, TMAl growth thickness are the Al of 11nmnGa(1-n)N layers (n=0.10~0.15), Al doping concentrations
1E+18~2E+18atom/cm3；InmGa(1-m)N/AlnGa(1-n)N quantum well layers periodicity is 6.
Preferably, in 170mbar, temperature is at 1010 DEG C for the reaction cavity pressure for the treatment of substrate.
Preferably, in 305mbar, temperature is at 560 DEG C for the reaction cavity pressure of growth GaN cushions.
Preferably, in 240mbar, temperature is at 1100 DEG C for the reaction cavity pressure of growth undoped GaN layer.
Preferably, in 240mbar, temperature is at 1000 DEG C for the reaction cavity pressure of growth p-type AlGaN layer.
Preferably, in 620mbar, temperature is at 1100 DEG C for the reaction cavity pressure of growth p-type GaN layer.
Preferably, the thickness of described low temperature GaN buffer is 50nm.
Preferably, the thickness of described undoped GaN layer is 4 μm.
Preferably, described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 4 μm.
Preferably, described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations are
5E+18~1E+19atom/cm3, thickness is 50nm.
Preferably, described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 109nm.
The present embodiment also provides a kind of LED structure, including substrate, sets epitaxial wafer over the substrate, and set
P electrode and N electrode on the epitaxial wafer, it is characterised in that described epitaxial wafer is the epitaxial wafer with SQW barrier layer.
Embodiment 6
The growing method of the present embodiment is identical with the growth step of embodiment 1.
Preferably, in 180mbar, temperature is at 1000 DEG C for the reaction cavity pressure for the treatment of substrate.
Preferably, in 350mbar, temperature is at 750 DEG C for the reaction cavity pressure of growth GaN cushions.
Preferably, in 220mbar, temperature is at 1100 DEG C for the reaction cavity pressure of growth undoped GaN layer.
Preferably, in 300mbar, temperature is at 990 DEG C for the reaction cavity pressure of growth p-type AlGaN layer.
Preferably, in 600mbar, temperature is at 1100 DEG C for the reaction cavity pressure of growth p-type GaN layer.
Preferably, the thickness of described low temperature GaN buffer is 50nm.
Preferably, the thickness of described undoped GaN layer is 2.2 μm.
Preferably, described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 2.2 μ
m。
Preferably, described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations are
5E+18~1E+19atom/cm3, thickness is 20nm.
Preferably, described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 200nm.
The present embodiment also provides a kind of LED structure, including substrate, sets epitaxial wafer over the substrate, and set
P electrode and N electrode on the epitaxial wafer, it is characterised in that described epitaxial wafer is the epitaxial wafer with SQW barrier layer.
Embodiment 7
The growing method of the present embodiment and a of embodiment 1, b, c, d, f, g, h growth step are identical, step e：
Reaction cavity pressure maintains 400mbar, and 700-750 DEG C of low temperature is passed through NH3, the thickness of TEGa, TMIn growth doping In
Spend the In for 3.5nmxGa(1-x)N layers (x=0.15~0.25), In doping concentrations 1E+20~3E+20atom/cm3, it is warming up to
850 DEG C are passed through NH3, TEGa, TMIn growth thickness are the In of 15nmyGa(1-y)N layers (y=0.05~0.10), In doping concentrations 1E
+ 18~2E+18atom/cm3；InxGa(1-x)N/InyGa(1-y)N quantum well layers periodicity is 5.
Then, reaction cavity pressure maintains 400mbar, and 750 DEG C of low temperature is passed through NH3, TEGa, TMIn growth doping In's
Thickness is the In of 3.5nmmGa(1-m)N layers (m=0.15-0.25), In doping concentrations 1E+20~3E+20atom/cm3, it is warming up to
850 DEG C, it is passed through NH3, TEGa, TMAl growth thickness are the Al of 15nmnGa(1-n)N layers (n=0.10~0.15), Al doping concentrations
1E+18~2E+18atom/cm3；InmGa(1-m)N/AlnGa(1-n)N quantum well layers periodicity is 6.
Preferably, in 170mbar, temperature is at 1020 DEG C for the reaction cavity pressure for the treatment of substrate.
Preferably, in 320mbar, temperature is at 570 DEG C for the reaction cavity pressure of growth GaN cushions.
Preferably, in 220mbar, temperature is at 1120 DEG C for the reaction cavity pressure of growth undoped GaN layer.
Preferably, in 220mbar, temperature is at 920 DEG C for the reaction cavity pressure of growth p-type AlGaN layer.
Preferably, in 620mbar, temperature is at 1020 DEG C for the reaction cavity pressure of growth p-type GaN layer.
Preferably, the thickness of described low temperature GaN buffer is 50nm.
Preferably, the thickness of described undoped GaN layer is 3.9 μm.
Preferably, described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 3.9 μ
m。
Preferably, described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations are
5E+18~1E+19atom/cm3, thickness is 49nm.
Preferably, described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 198nm.
The present embodiment also provides a kind of LED structure, including substrate, sets epitaxial wafer over the substrate, and set
P electrode and N electrode on the epitaxial wafer, it is characterised in that described epitaxial wafer is the epitaxial wafer with SQW barrier layer.
Embodiment 8
The growing method of the present embodiment is identical with the growth step of embodiment 1.
Preferably, in 200mbar, temperature is at 1080 DEG C for the reaction cavity pressure for the treatment of substrate.
Preferably, in 600mbar, temperature is at 550 DEG C for the reaction cavity pressure of growth GaN cushions.
Preferably, in 380mbar, temperature is at 1300 DEG C for the reaction cavity pressure of growth undoped GaN layer.
Preferably, in 300mbar, temperature is at 1000 DEG C for the reaction cavity pressure of growth p-type AlGaN layer.
Preferably, in 900mbar, temperature is at 1080 DEG C for the reaction cavity pressure of growth p-type GaN layer.
Preferably, the thickness of described low temperature GaN buffer is 50nm.
Preferably, the thickness of described undoped GaN layer is 4 μm.
Preferably, described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 4 μm.
Preferably, described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations are
5E+18~1E+19atom/cm3, thickness is 48nm.
Preferably, described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 170nm.
The present embodiment also provides a kind of LED structure, including substrate, sets epitaxial wafer over the substrate, and set
P electrode and N electrode on the epitaxial wafer, it is characterised in that described epitaxial wafer is the epitaxial wafer with SQW barrier layer.
Embodiment 9
The growing method of the present embodiment and a of embodiment 1, b, c, d, f, g, h growth step are identical, step e：
Reaction cavity pressure maintains 390mbar, and 740 DEG C of low temperature is passed through NH3, TEGa, TMIn growth doping In thickness be
The In of 2.8nmxGa(1-x)N layers (x=0.15~0.25), In doping concentrations 1E+20~3E+20atom/cm3, it is warming up to 850 DEG C
It is passed through NH3, TEGa, TMIn growth thickness are the In of 13nmyGa(1-y)N layers (y=0.05~0.10), In doping concentrations 1E+18~
2E+18atom/cm3；InxGa(1-x)N/InyGa(1-y)N quantum well layers periodicity is 5.
Then, reaction cavity pressure maintains 390mbar, and 740 DEG C of low temperature is passed through NH3, TEGa, TMIn growth doping In's
Thickness is the In of 2.8nmmGa(1-m)N layers (m=0.15-0.25), In doping concentrations 1E+20~3E+20atom/cm3, it is warming up to
850 DEG C, it is passed through NH3, TEGa, TMAl growth thickness are the Al of 13nmnGa(1-n)N layers (n=0.10~0.15), Al doping concentrations
1E+18~2E+18atom/cm3；InmGa(1-m)N/AlnGa(1-n)N quantum well layers periodicity is 6.
Preferably, in 200mbar, temperature is at 1100 DEG C for the reaction cavity pressure for the treatment of substrate.
Preferably, in 300mbar, temperature is at 555 DEG C for the reaction cavity pressure of growth GaN cushions.
Preferably, in 209mbar, temperature is at 1300 DEG C for the reaction cavity pressure of growth undoped GaN layer.
Preferably, in 300mbar, temperature is at 1000 DEG C for the reaction cavity pressure of growth p-type AlGaN layer.
Preferably, in 680mbar, temperature is at 1000 DEG C for the reaction cavity pressure of growth p-type GaN layer.
Preferably, the thickness of described low temperature GaN buffer is 50nm.
Preferably, the thickness of described undoped GaN layer is 2.1 μm.
Preferably, described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 2.1 μ
m。
Preferably, described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations are
5E+18~1E+19atom/cm3, thickness is 22nm.
Preferably, described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 100nm.
The present embodiment also provides a kind of LED structure, including substrate, sets epitaxial wafer over the substrate, and set
P electrode and N electrode on the epitaxial wafer, it is characterised in that described epitaxial wafer is the epitaxial wafer with SQW barrier layer.
Embodiment 10
The growing method of the present embodiment is identical with the growth step of embodiment 1.
Preferably, in 200mbar, temperature is at 1050 DEG C for the reaction cavity pressure for the treatment of substrate.
Preferably, in 4550mbar, temperature is at 750 DEG C for the reaction cavity pressure of growth GaN cushions.
Preferably, in 335mbar, temperature is at 1300 DEG C for the reaction cavity pressure of growth undoped GaN layer.
Preferably, in 300mbar, temperature is at 900 DEG C for the reaction cavity pressure of growth p-type AlGaN layer.
Preferably, in 900mbar, temperature is at 1100 DEG C for the reaction cavity pressure of growth p-type GaN layer.
Preferably, the thickness of described low temperature GaN buffer is 50nm.
Preferably, the thickness of described undoped GaN layer is 2.1 μm.
Preferably, described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 2.1 μ
m。
Preferably, described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations are
5E+18~1E+19atom/cm3, thickness is 20nm.
Preferably, described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 200nm.
The present embodiment also provides a kind of LED structure, including substrate, sets epitaxial wafer over the substrate, and set
P electrode and N electrode on the epitaxial wafer, it is characterised in that described epitaxial wafer is the epitaxial wafer with SQW barrier layer.
Embodiment 11
The growing method of the present embodiment and a of embodiment 1, b, c, d, f, g, h growth step are identical, step e：
Reaction cavity pressure maintains 385mbar, and 710 DEG C of low temperature is passed through NH3, TEGa, TMIn growth doping In thickness be
The In of 3.5nmxGa(1-x)N layers (x=0.15~0.25), In doping concentrations 1E+20~3E+20atom/cm3, it is warming up to 810 DEG C
It is passed through NH3, TEGa, TMIn growth thickness are the In of 11nmyGa(1-y)N layers (y=0.05~0.10), In doping concentrations 1E+18~
2E+18atom/cm3；InxGa(1-x)N/InyGa(1-y)N quantum well layers periodicity is 6.
Then, reaction cavity pressure maintains 385mbar, and 710 DEG C of low temperature is passed through NH3, TEGa, TMIn growth doping In's
Thickness is the In of 3.5nmmGa(1-m)N layers (m=0.15-0.25), In doping concentrations 1E+20~3E+20atom/cm3, it is warming up to
810 DEG C, it is passed through NH3, TEGa, TMAl growth thickness are the Al of 11nmnGa(1-n)N layers (n=0.10~0.15), Al doping concentrations
1E+18~2E+18atom/cm3；InmGa(1-m)N/AlnGa(1-n)N quantum well layers periodicity is 6.
Preferably, in 200mbar, temperature is at 1100 DEG C for the reaction cavity pressure for the treatment of substrate.
Preferably, in 600mbar, temperature is at 750 DEG C for the reaction cavity pressure of growth GaN cushions.
Preferably, in 400mbar, temperature is at 1290 DEG C for the reaction cavity pressure of growth undoped GaN layer.
Preferably, in 300mbar, temperature is at 1000 DEG C for the reaction cavity pressure of growth p-type AlGaN layer.
Preferably, in 650mbar, temperature is at 1100 DEG C for the reaction cavity pressure of growth p-type GaN layer.
Preferably, the thickness of described low temperature GaN buffer is 50nm.
Preferably, the thickness of described undoped GaN layer is 4 μm.
Preferably, described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 4 μm.
Preferably, described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations are
5E+18~1E+19atom/cm3, thickness is 50nm.
Preferably, described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 190nm.
The present embodiment also provides a kind of LED structure, including substrate, sets epitaxial wafer over the substrate, and set
P electrode and N electrode on the epitaxial wafer, it is characterised in that described epitaxial wafer is the epitaxial wafer with SQW barrier layer.
Embodiment 12
The growing method of the present embodiment is identical with the growth step of embodiment 1.
Preferably, in 200mbar, temperature is at 1000~1100 DEG C for the reaction cavity pressure for the treatment of substrate.
Preferably, in 300mbar, temperature is at 550~750 DEG C for the reaction cavity pressure of growth GaN cushions.
Preferably, in 300mbar, temperature is at 1200~1300 DEG C for the reaction cavity pressure of growth undoped GaN layer.
Preferably, in 300mbar, temperature is at 980 DEG C for the reaction cavity pressure of growth p-type AlGaN layer.
Preferably, in 600~900mbar, temperature is at 1050 DEG C for the reaction cavity pressure of growth p-type GaN layer.
Preferably, the thickness of described low temperature GaN buffer is 50nm.
Preferably, the thickness of described undoped GaN layer is 3.4 μm.
Preferably, described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 3.4 μ
m。
Preferably, described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations are
5E+18~1E+19atom/cm3, thickness is 38nm.
Preferably, described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 177nm.
The present embodiment also provides a kind of LED structure, including substrate, sets epitaxial wafer over the substrate, and set
P electrode and N electrode on the epitaxial wafer, it is characterised in that described epitaxial wafer is the epitaxial wafer with SQW barrier layer.
Embodiment 13
The growing method of the present embodiment and a of embodiment 1, b, c, d, f, g, h growth step are identical, step e：
Reaction cavity pressure maintains 310mbar, and 745 DEG C of low temperature is passed through NH3, TEGa, TMIn growth doping In thickness be
The In of 2.8nmxGa(1-x)N layers (x=0.15~0.25), In doping concentrations 1E+20~3E+20atom/cm3, it is warming up to 850 DEG C
It is passed through NH3, TEGa, TMIn growth thickness are the In of 15nmyGa(1-y)N layers (y=0.05~0.10), In doping concentrations 1E+18~
2E+18atom/cm3；InxGa(1-x)N/InyGa(1-y)N quantum well layers periodicity is 6.
Then, reaction cavity pressure maintains 310mbar, and 745 DEG C of low temperature is passed through NH3, TEGa, TMIn growth doping In's
Thickness is the In of 2.8nmmGa(1-m)N layers (m=0.15-0.25), In doping concentrations 1E+20~3E+20atom/cm3, it is warming up to
850 DEG C, it is passed through NH3, TEGa, TMAl growth thickness are the Al of 15nmnGa(1-n)N layers (n=0.10~0.15), Al doping concentrations
1E+18~2E+18atom/cm3；InmGa(1-m)N/AlnGa(1-n)N quantum well layers periodicity is 6.
Preferably, in 200mbar, temperature is at 1100 DEG C for the reaction cavity pressure for the treatment of substrate.
Preferably, in 600mbar, temperature is at 590 DEG C for the reaction cavity pressure of growth GaN cushions.
Preferably, in 290mbar, temperature is at 1300 DEG C for the reaction cavity pressure of growth undoped GaN layer.
Preferably, in 300mbar, temperature is at 1000 DEG C for the reaction cavity pressure of growth p-type AlGaN layer.
Preferably, in 880mbar, temperature is at 1090 DEG C for the reaction cavity pressure of growth p-type GaN layer.
Preferably, the thickness of described low temperature GaN buffer is 50nm.
Preferably, the thickness of described undoped GaN layer is 2.6 μm.
Preferably, described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 2.6 μ
m。
Preferably, described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations are
5E+18~1E+19atom/cm3, thickness is 50nm.
Preferably, described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 200nm.
The present embodiment also provides a kind of LED structure, including substrate, sets epitaxial wafer over the substrate, and set
P electrode and N electrode on the epitaxial wafer, it is characterised in that described epitaxial wafer is the epitaxial wafer with SQW barrier layer.
Embodiment 14
The growing method of the present embodiment is identical with the growth step of embodiment 1.
Preferably, in 150mbar, temperature is at 1010 DEG C for the reaction cavity pressure for the treatment of substrate.
Preferably, in 300mbar, temperature is at 540 DEG C for the reaction cavity pressure of growth GaN cushions.
Preferably, in 200mbar, temperature is at 1100~1300 DEG C for the reaction cavity pressure of growth undoped GaN layer.
Preferably, in 250~300mbar, temperature is at 950~1000 DEG C for the reaction cavity pressure of growth p-type AlGaN layer.
Preferably, in 700~900mbar, temperature is at 1080 DEG C for the reaction cavity pressure of growth p-type GaN layer.
Preferably, the thickness of described low temperature GaN buffer is 50nm.
Preferably, the thickness of described undoped GaN layer is 3.1 μm.
Preferably, described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 3.1 μ
m。
Preferably, described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations are
5E+18~1E+19atom/cm3, thickness is 44nm.
Preferably, described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 177nm.
The present embodiment also provides a kind of LED structure, including substrate, sets epitaxial wafer over the substrate, and set
P electrode and N electrode on the epitaxial wafer, it is characterised in that described epitaxial wafer is the epitaxial wafer with SQW barrier layer.
Embodiment 15
The growing method of the present embodiment and a of embodiment 1, b, c, d, f, g, h growth step are identical, step e：
Reaction cavity pressure maintains 355mbar, and 750 DEG C of low temperature is passed through NH3, TEGa, TMIn growth doping In thickness be
The In of 3.5nmxGa(1-x)N layers (x=0.15~0.25), In doping concentrations 1E+20~3E+20atom/cm3, it is warming up to 800 DEG C
It is passed through NH3, TEGa, TMIn growth thickness are the In of 10nmyGa(1-y)N layers (y=0.05~0.10), In doping concentrations 1E+18~
2E+18atom/cm3；InxGa(1-x)N/InyGa(1-y)N quantum well layers periodicity is 6.
Then, reaction cavity pressure maintains 355mbar, and 750 DEG C of low temperature is passed through NH3, TEGa, TMIn growth doping In's
Thickness is the In of 3.5nmmGa(1-m)N layers (m=0.15-0.25), In doping concentrations 1E+20~3E+20atom/cm3, it is warming up to
800 DEG C, it is passed through NH3, TEGa, TMAl growth thickness are the Al of 10nmnGa(1-n)N layers (n=0.10~0.15), Al doping concentrations
1E+18~2E+18atom/cm3；InmGa(1-m)N/AlnGa(1-n)N quantum well layers periodicity is 6.
Preferably, in 200mbar, temperature is at 1100 DEG C for the reaction cavity pressure for the treatment of substrate.
Preferably, in 300~500mbar, temperature is at 750 DEG C for the reaction cavity pressure of growth GaN cushions.
Preferably, in 400mbar, temperature is at 1300 DEG C for the reaction cavity pressure of growth undoped GaN layer.
Preferably, in 300mbar, temperature is at 900 DEG C for the reaction cavity pressure of growth p-type AlGaN layer.
Preferably, in 900mbar, temperature is at 1100 DEG C for the reaction cavity pressure of growth p-type GaN layer.
Preferably, the thickness of described low temperature GaN buffer is 50nm.
Preferably, the thickness of described undoped GaN layer is 4 μm.
Preferably, described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 4 μm.
Preferably, described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations are
5E+18~1E+19atom/cm3, thickness is 50nm.
Preferably, described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 200nm.
The present embodiment also provides a kind of LED structure, including substrate, sets epitaxial wafer over the substrate, and set
P electrode and N electrode on the epitaxial wafer, it is characterised in that described epitaxial wafer is the epitaxial wafer with SQW barrier layer.
Embodiment 16
The growing method of the present embodiment is identical with the growth step of embodiment 1.
Preferably, in 199mbar, temperature is at 1000 DEG C for the reaction cavity pressure for the treatment of substrate.
Preferably, in 600mbar, temperature is at 750 DEG C for the reaction cavity pressure of growth GaN cushions.
Preferably, in 200mbar, temperature is at 1300 DEG C for the reaction cavity pressure of growth undoped GaN layer.
Preferably, in 300mbar, temperature is at 900 DEG C for the reaction cavity pressure of growth p-type AlGaN layer.
Preferably, in 600mbar, temperature is at 1090 DEG C for the reaction cavity pressure of growth p-type GaN layer.
Preferably, the thickness of described low temperature GaN buffer is 50nm.
Preferably, the thickness of described undoped GaN layer is 4 μm.
Preferably, described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 4 μm.
Preferably, described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations are
5E+18~1E+19atom/cm3, thickness is 50nm.
Preferably, described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 199nm.
The present embodiment also provides a kind of LED structure, including substrate, sets epitaxial wafer over the substrate, and set
P electrode and N electrode on the epitaxial wafer, it is characterised in that described epitaxial wafer is the epitaxial wafer with SQW barrier layer.
Embodiment 17
The growing method of the present embodiment and a of embodiment 1, b, c, d, f, g, h growth step are identical, step e：
Reaction cavity pressure maintains 397mbar, and 715 DEG C of low temperature is passed through NH3, TEGa, TMIn growth doping In thickness be
The In of 3.2nmxGa(1-x)N layers (x=0.15~0.25), In doping concentrations 1E+20~3E+20atom/cm3, it is warming up to 850 DEG C
It is passed through NH3, TEGa, TMIn growth thickness are the In of 14nmyGa(1-y)N layers (y=0.05~0.10), In doping concentrations 1E+18~
2E+18atom/cm3；InxGa(1-x)N/InyGa(1-y)N quantum well layers periodicity is 6.
Then, reaction cavity pressure maintains 397mbar, and 715 DEG C of low temperature is passed through NH3, TEGa, TMIn growth doping In's
Thickness is the In of 3.2nmmGa(1-m)N layers (m=0.15-0.25), In doping concentrations 1E+20~3E+20atom/cm3, it is warming up to
850 DEG C, it is passed through NH3, TEGa, TMAl growth thickness are the Al of 14nmnGa(1-n)N layers (n=0.10~0.15), Al doping concentrations
1E+18~2E+18atom/cm3；InmGa(1-m)N/AlnGa(1-n)N quantum well layers periodicity is 5.
Preferably, in 200mbar, temperature is at 1100 DEG C for the reaction cavity pressure for the treatment of substrate.
Preferably, in 600mbar, temperature is at 740 DEG C for the reaction cavity pressure of growth GaN cushions.
Preferably, in 400mbar, temperature is at 1300 DEG C for the reaction cavity pressure of growth undoped GaN layer.
Preferably, in 300mbar, temperature is at 900 DEG C for the reaction cavity pressure of growth p-type AlGaN layer.
Preferably, in 900mbar, temperature is at 1000 DEG C for the reaction cavity pressure of growth p-type GaN layer.
Preferably, the thickness of described low temperature GaN buffer is 50nm.
Preferably, the thickness of described undoped GaN layer is 2 μm.
Preferably, described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 4 μm.
Preferably, described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations are
5E+18~1E+19atom/cm3, thickness is 40nm.
Preferably, described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 160nm.
The present embodiment also provides a kind of LED structure, including substrate, sets epitaxial wafer over the substrate, and set
P electrode and N electrode on the epitaxial wafer, it is characterised in that described epitaxial wafer is the epitaxial wafer with SQW barrier layer.
Embodiment 18
The growing method of the present embodiment is identical with the growth step of embodiment 1.
Preferably, in 190mbar, temperature is at 1090 DEG C for the reaction cavity pressure for the treatment of substrate.
Preferably, in 590mbar, temperature is at 7000 DEG C for the reaction cavity pressure of growth GaN cushions.
Preferably, in 200mbar, temperature is at 1300 DEG C for the reaction cavity pressure of growth undoped GaN layer.
Preferably, in 300mbar, temperature is at 900 DEG C for the reaction cavity pressure of growth p-type AlGaN layer.
Preferably, in 600mbar, temperature is at 1000 DEG C for the reaction cavity pressure of growth p-type GaN layer.
Preferably, the thickness of described low temperature GaN buffer is 50nm.
Preferably, the thickness of described undoped GaN layer is 2 μm.
Preferably, described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 2 μm.
Preferably, described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations are
5E+18~1E+19atom/cm3, thickness is 22nm.
Preferably, described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 133nm.
The present embodiment also provides a kind of LED structure, including substrate, sets epitaxial wafer over the substrate, and set
P electrode and N electrode on the epitaxial wafer, it is characterised in that described epitaxial wafer is the epitaxial wafer with SQW barrier layer.
Embodiment 19
The growing method of the present embodiment and a of embodiment 1, b, c, d, f, g, h growth step are identical, step e：
Reaction cavity pressure maintains 400mbar, and 700 DEG C of low temperature is passed through NH3, TEGa, TMIn growth doping In thickness be
The In of 3.1nmxGa(1-x)N layers (x=0.15~0.25), In doping concentrations 1E+20~3E+20atom/cm3, it is warming up to 810 DEG C
It is passed through NH3, TEGa, TMIn growth thickness are the In of 13nmyGa(1-y)N layers (y=0.05~0.10), In doping concentrations 1E+18~
2E+18atom/cm3；InxGa(1-x)N/InyGa(1-y)N quantum well layers periodicity is 6.
Then, reaction cavity pressure maintains 400mbar, and 700 DEG C of low temperature is passed through NH3, TEGa, TMIn growth doping In's
Thickness is the In of 3.1nmmGa(1-m)N layers (m=0.15-0.25), In doping concentrations 1E+20~3E+20atom/cm3, it is warming up to
810 DEG C, it is passed through NH3, TEGa, TMAl growth thickness are the Al of 13nmnGa(1-n)N layers (n=0.10~0.15), Al doping concentrations
1E+18~2E+18atom/cm3；InmGa(1-m)N/AlnGa(1-n)N quantum well layers periodicity is 5.
Preferably, in 200mbar, temperature is at 1100 DEG C for the reaction cavity pressure for the treatment of substrate.
Preferably, in 300~600mbar, temperature is at 550~750 DEG C for the reaction cavity pressure of growth GaN cushions.
Preferably, in 300~400mbar, temperature is at 1100~1300 DEG C for the reaction cavity pressure of growth undoped GaN layer.
Preferably, in 300mbar, temperature is at 970 DEG C for the reaction cavity pressure of growth p-type AlGaN layer.
Preferably, in 600~900mbar, temperature is at 1000~1100 DEG C for the reaction cavity pressure of growth p-type GaN layer.
Preferably, the thickness of described low temperature GaN buffer is 50nm.
Preferably, the thickness of described undoped GaN layer is 3.4 μm.
Preferably, described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 3.5 μ
m。
Preferably, described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations are
5E+18~1E+19atom/cm3, thickness is 31nm.
Preferably, described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 111nm.
The present embodiment also provides a kind of LED structure, including substrate, sets epitaxial wafer over the substrate, and set
P electrode and N electrode on the epitaxial wafer, it is characterised in that described epitaxial wafer is the epitaxial wafer with SQW barrier layer.
Embodiment 20
The growing method of the present embodiment is identical with the growth step of embodiment 1.
Preferably, in 200mbar, temperature is at 1100 DEG C for the reaction cavity pressure for the treatment of substrate.
Preferably, in 305~590mbar, temperature is at 750 DEG C for the reaction cavity pressure of growth GaN cushions.
Preferably, in 205~300mbar, temperature is at 1300 DEG C for the reaction cavity pressure of growth undoped GaN layer.
Preferably, in 200~300mbar, temperature is at 1000 DEG C for the reaction cavity pressure of growth p-type AlGaN layer.
Preferably, in 900mbar, temperature is at 1100 DEG C for the reaction cavity pressure of growth p-type GaN layer.
Preferably, the thickness of described low temperature GaN buffer is 50nm.
Preferably, the thickness of described undoped GaN layer is 3.9 μm.
Preferably, described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 3.9 μ
m。
Preferably, described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations are
5E+18~1E+19atom/cm3, thickness is 29nm.
Preferably, described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 150nm.
The present embodiment also provides a kind of LED structure, including substrate, sets epitaxial wafer over the substrate, and set
P electrode and N electrode on the epitaxial wafer, it is characterised in that described epitaxial wafer is the epitaxial wafer with SQW barrier layer.
Experiment one
Sample 1 is prepared according to prior art, the method according to the invention prepares sample 2；Sample 1 and the difference of sample 2 exist
It is different in luminous layer parameter, grow other outer layer growth conditions just the same.The sample 1 of table 1 and sample 2 be refer in identical
ITO layer 2300 is plated under preceding process conditions about angstrom, about 1500 angstroms of Cr/Pt/Au electrodes are plated under the conditions of identical, plated under the conditions of identical
Protective layer SiO2About 500 angstroms, then at identical conditions by sample grinding and cutting into 762 μm * 762 μm (30mi*30mil)
Chip particle, then sample 1 and sample 2 each select 150 crystal grain in same position, under identical packaging technology, encapsulation
Into white light LEDs.Then using the photoelectric properties of integrating sphere test sample 1 and sample 2 under the conditions of driving current 350mA.
Described InxGa(1-x)N/InyGa(1-y)N quantum well layers, wherein, InxGa(1-x)The thickness of N is 2.8~3.5nm；
InyGa(1-y)The thickness of N is 10~15nm；
Described InmGa(1-m)N/AlnGa(1-n)N quantum well layers, wherein, InmGa(1-m)The thickness of N is 2.8~3.5nm,
AlnGa(1-n)The thickness of N is 10~15nm.
Table 1
Show that the light output of LED structure of the invention is higher by about 8% from the data in Fig. 3.
Beneficial effects of the present invention are：
First, luminescent layer SQW barrier layer is designed as In by traditional InGaN/GaN super crystal lattice materialsmGa(1-m)N/
AlnGa(1-n)The combination of N quantum well layers, reduces spilling of the electronics in SQW, increases injection of the hole to SQW, improves electricity
Son and concentration of the hole in SQW, increase device light emitting efficiency.
Second, do not change potential well, potential barrier GaN becomes the raising of AlGaN conduction bands, can suitably reduce the mobility of electronics so that
The electronics of potential well will not leak to p layers of consumption hole due to excessive；The reduction of movement of hole potential barrier, beneficial to the motion in hole,
Improve the injection in hole.
Described above has shown and described some preferred embodiments of the application, but as previously described, it should be understood that the application
Be not limited to form disclosed herein, be not to be taken as the exclusion to other embodiment, and can be used for various other combinations,
Modification and environment, and can be in application contemplated scope described herein, by above-mentioned teaching or the technology or knowledge of association area
It is modified.And the change and change that those skilled in the art are carried out do not depart from spirit and scope, then all should be in this Shen
Please be in the protection domain of appended claims.
Claims (5)
1. a kind of growing method of the LED with SQW barrier layer, successively including treatment substrate, growing low temperature GaN bufferings
Layer, grows undoped GaN layer, and growing n-type GaN layer grows luminescent layer MQW, grows p-type AlGaN layer, grows the step of p-type GaN layer
Suddenly, it is characterised in that
The step of described growth luminescent layer MQW, includes：Cyclical growth InxGa(1-x)N/InyGa(1-y)N quantum well layers with
InmGa(1-m)N/AlnGa(1-n)The combination of N quantum well layers, wherein, x=0.15~0.25, y=0.05~0.10；M=0.15~
0.25, n=0.10~0.15, wherein,
Described growth InxGa(1-x)N/InyGa(1-y)The reaction cavity pressure of N quantum well layers is in 310,355 or 360mbar, growth
Periodicity is 5~6, and temperature is passed through NH at 710 or 745 DEG C3, TEGa, TMIn growth doping In thickness for 2.9,3.1 or
The In of 3.2nmxGa(1-x)N, In doping concentration are 1E+20~3E+20atom/cm3, 810 DEG C are warming up to, it is passed through NH3、TEGa、
TMIn growth thickness is the In of 11,13 or 14nmyGa(1-y)N, In doping concentration are 1E+18~2E+18atom/cm3；
Described growth InmGa(1-m)N/AlnGa(1-n)The reaction cavity pressure of N quantum well layers is in 310,355 or 360mbar, growth
Periodicity is 5~6, and temperature is passed through NH at 710 or 745 DEG C3, TEGa, TMIn growth doping In thickness for 2.9,3.1 or
The In of 3.2nmmGa(1-m)N, In doping concentration are 1E+20~3E+20atom/cm3, 810 DEG C are warming up to, it is passed through NH3、TEGa、
TMIn growth thickness is the Al of 11,13 or 14nmnGa(1-n)N, In doping concentration are 1E+18~2E+18atom/cm3。
2. growing method according to claim 1, it is characterised in that：
Described growth InxGa(1-x)N/InyGa(1-y)The periodicity of N quantum well layers is 5~6, wherein, InxGa(1-x)The In of N mixes
Miscellaneous concentration is 1E+20~3E+20atom/cm3, thickness is 2.8~3.5nm；InyGa(1-y)The In doping concentrations of N be 1E+18~
2E+18atom/cm3, thickness is 10~15nm.
3. growing method according to claim 2, it is characterised in that：
Described growth InmGa(1-m)N/AlnGa(1-n)The periodicity of N quantum well layers is 5~6, wherein, InmGa(1-m)The In of N mixes
Miscellaneous concentration is 1E+20~3E+20atom/cm3, thickness is 2.8~3.5nm, AlnGa(1-n)The Al doping concentrations 1E+18-2E+ of N
18atom/cm3, thickness is 10~15nm.
4. growing method according to claim 1, it is characterised in that：
The reaction cavity pressure of substrate is processed in 150~200mbar, temperature is at 1000~1100 DEG C；
The reaction cavity pressure of GaN cushions is grown in 300~600mbar, and temperature is at 550~750 DEG C；
The reaction cavity pressure of undoped GaN layer is grown in 200~400mbar, and temperature is at 1100~1300 DEG C；
The reaction cavity pressure of p-type AlGaN layer is grown in 200~300mbar, and temperature is at 900~1000 DEG C；
The reaction cavity pressure of p-type GaN layer is grown in 600~900mbar, and temperature is at 1000~1100 DEG C.
5. growing method according to claim 4, it is characterised in that：
The thickness of described low temperature GaN buffer is 50nm；
The thickness of described undoped GaN layer is 2~4 μm；
Described n-type GaN layer doping Si, Si doping concentrations 5E+18~1E+19atom/cm3, thickness is 2~4 μm；
Described p-type AlGaN layer, Al doping concentrations are 1E+20~3E+20atom/cm3, Mg doping concentrations are 5E+18~1E+
19atom/cm3, thickness is 20~50nm；
Described p-type GaN layer, Mg doping concentrations 1E+19~1E+20atom/cm3, thickness is 100~200nm.
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