CN106129209B - A kind of epitaxial wafer and its growing method of high LED luminous efficiency - Google Patents
A kind of epitaxial wafer and its growing method of high LED luminous efficiency Download PDFInfo
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- CN106129209B CN106129209B CN201610705933.XA CN201610705933A CN106129209B CN 106129209 B CN106129209 B CN 106129209B CN 201610705933 A CN201610705933 A CN 201610705933A CN 106129209 B CN106129209 B CN 106129209B
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- 238000000034 method Methods 0.000 title claims abstract description 9
- 238000010276 construction Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims abstract description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 238000002347 injection Methods 0.000 abstract description 8
- 239000007924 injection Substances 0.000 abstract description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 abstract description 8
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 229910002601 GaN Inorganic materials 0.000 description 71
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005562 fading Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 208000035859 Drug effect increased Diseases 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000005701 quantum confined stark effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
A kind of epitaxial wafer and its growing method of high LED luminous efficiency, belong to technical field of semiconductors, in the same side of substrate successively epitaxial growth buffer, unintentional doped gan layer, n-type doping GaN layer, MQB layers of AlN/GaN laminated construction, multiple quantum well layer, electronic barrier layer and p-type doped gan layer, under conditions of temperature is 1100~1200 DEG C, pressure is 50~400mbar, growth forms MQB layers of AlN/GaN laminated construction in n-type doping GaN layer.Production method of the present invention is simple, in growing AIN/MQB layers of GaN, stablize the temperature and pressure of reaction chamber, it can be realized by the time and flow of control trimethyl gallium (TMGa) and trimethyl aluminium (TMAl) injection reaction chamber, it can be obviously improved current expansion, improve the brightness of LED light emitting diode.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to the production technical field of light emitting diode epitaxial structure.
Technical background
In recent years, nitride substrate LED is widely used in the various fields such as display screen, backlight, illumination and street lamp,
With the large-scale application of higher-wattage LED, market puts forward higher requirements brightness, the luminous efficiency etc. of LED.
LED luminous efficiency is improved by epitaxial structure at present and mainly improves its internal quantum efficiency: first is that quantum well structure
Optimization, mostly use gradual change In component, gradual change quantum well thickness, AlInGaN superlattices, Delta doping Si element etc. greatly, alleviate
The influence of stress, reduction quantum confined stark effect in active area, improves the overlapping of electrons and holes Spatial Wave Function；Two
It is to be optimized to p-type GaN material, by adjusting growth pressure, Delta adulterates the elements such as Al, In and improves effective hole concentration,
Final purpose is provided to increase electrons and holes radiation recombination efficiency in Quantum Well, improves brightness.The invention proposes one kind
The structure of N-type AlN/GaN MQB is inserted into after n type gallium nitride, the structural improvement uniformity of Carrier Profile increases load
The extending transversely of son is flowed, keeps electronics sufficiently compound in active area, reduces electronics leakage, which is easily achieved, and is suitble to
Scale of mass production.
Summary of the invention
In order to overcome the above defect of the existing technology, the first object of the present invention is to propose that a kind of high LED shines
The epitaxial wafer of efficiency.
The present invention sets gradually buffer layer, unintentional doped gan layer, n-type doping GaN layer, AlN/ in the same side of substrate
GaN laminated construction MQB(Multi Quantum Barrier) layer, multiple quantum well layer, electronic barrier layer and p-type doped gan layer.
The present invention is inserted into N-type AlN/GaN MQB structure between n type gallium nitride layer and multiple quantum well layer.Pass through the N of insertion
Type AlN/GaN MQB structure increases the extension of electric current, can be effectively improved carrier and enter the uniformity before Quantum Well, make electronics
Can be sufficiently compound in active area, active area Quantum Well can be fully utilized, and reduce electronics leakage, greatly improve light-emitting diodes
The internal quantum efficiency of pipe, and then the photoelectric characteristic of LED device is improved, improve the brightness of light emitting diode.
In addition, MQB layers of AlN/GaN laminated construction of the present invention are formed by 1~8 pair AlN/GaN layers.The forbidden band of AlN is wide
Degree is greater than the forbidden bandwidth of GaN, plays the role of potential barrier and electronics is stopped carrier to be made preferably to expand using multilayer MQB structure
Exhibition.
Described AlN/GaN layers at least two pairs, each pair of AlN/GaN layers of overall thickness be 1~10nm, it is AlN/GaN layers each pair of in
The thickness ratio of AlN and GaN is 0.2~5: 1, and the thickness of adjacent pairs of AlN and GaN change than in gradient.The present invention passes through variation
AlN thickness degree, adjustable barrier width, optimization stops the effect of electronics, thus the effect of REINFORCED Al N/GaN MQB structure.
In addition, MQB layers of AlN/GaN laminated construction of overall thickness control of the present invention is in 30 ± 10nm.Using relatively thin
MQB layers while increasing current expansion, also can be improved injection efficiency of the electronics to multiple quantum wells.
It is another object of the present invention to propose the production method of the above product.
The present invention the same side of substrate successively epitaxial growth buffer, unintentional doped gan layer, n-type doping GaN layer,
MQB layers of AlN/GaN laminated construction, multiple quantum well layer, electronic barrier layer and p-type doped gan layer, it is characterised in that be in temperature
1100~1200 DEG C, pressure be 50~400mbar under conditions of, in n-type doping GaN layer growth form AlN/GaN lamination knot
MQB layers of structure.
Production method of the present invention is simple, in growing AIN/MQB layers of GaN, stablizes the temperature and pressure of reaction chamber, passes through
The time for controlling trimethyl gallium (TMGa) and trimethyl aluminium (TMAl) injection reaction chamber and flow are it is achieved that can be obviously improved
Current expansion improves the brightness of LED light emitting diode, is suitble to scale of mass production.
In growing AIN/MQB layers of GaN laminated construction, at least one layer of progress n-type doping in AlN or GaN.Using N
Type doping can make MQB layers of AlN/GaN playing the injection effect increased in the sub- trap of current-carrying subvector while current expansion effect
Rate.Single pair AlN carries out n-type doping or single pair GaN carries out n-type doping and can act as the sub- trap injection of increase current-carrying subvector
Effect.
In growing AIN/MQB layers of GaN laminated construction, growth forms 1~8 pair AlN/GaN layers.
Growth forms at least two pairs AlN/GaN layers, and each pair of AlN/GaN layers of overall thickness is 1~10nm, each pair of AlN/GaN
The growth thickness ratio of AlN and GaN is 0.2~5: 1 in layer.By adjusting the thickness of every AlN/GaN layers of a pair of, electric current can control
The efficiency of the sub- trap injection of the intensity and current-carrying subvector of extension.
MQB layers of the AlN/GaN laminated construction of the overall thickness that growth is formed is 30 ± 10nm.
Detailed description of the invention
Fig. 1 is epitaxial structure schematic diagram of the invention.
In figure, L00: substrate；L01: buffer layer；L02: unintentional doped gan layer；L03:N type doped gan layer；L04:
MQB layers of AlN/GaN；L05: multiple quantum well layer；L06: electronic barrier layer；L07:P type doped gan layer.
Fig. 2 is AlN/GaN MQB layers of energy band schematic diagram (phase adjacency pair AlN/GaN thickness ratio successively decreases).
Fig. 3 is AlN/GaN MQB layers of energy band schematic diagram (phase adjacency pair AlN/GaN thickness is than being incremented by).
Fig. 4 is the Injection Current of different light emitting diodes and the relationship comparison diagram of lumen fraction.
Specific embodiment
To keep the contents of the present invention more clear and easy to understand, below in conjunction with Figure of description, the contents of the present invention are done into one
Walk explanation.Certainly the invention is not limited to the specific embodiment, general replacement known to those skilled in the art
It is included within the scope of protection of the present invention.
One, production technology:
Epitaxial structure of the present invention is grown using MOCVD, H2、N2As the carrier gas of organometallic sources, SiH4N-type doping is provided,
Two luxuriant magnesium (Cp2Mg) p-type doping, NH are provided3As V clan source, trimethyl gallium (TMGa), triethyl-gallium (TEGa), trimethyl aluminium
(TMAl), trimethyl indium (TMIn), as III race's organometallic sources, as shown in Figure 1, growth step is as follows:
Step 1: in H2Under environment, temperature is increased to 1150 DEG C, high-temperature cleaning processing is carried out to the surface substrate L00, it
After cool to 600 DEG C, lead to NH3Surfaces nitrided processing is carried out, substrate L00 can select sapphire, Si, SiC, GaN etc., this example
In preferred Sapphire Substrate.
Step 2: being passed through trimethyl gallium (TMGa) growth formation with a thickness of the GaN buffer layer L01 of 30nm, growth pressure is
600mbar。
Step 3: 1180 DEG C are warming up to, reduces growth pressure to 300mbar, growth forms unintentional doped gan layer L02,
With a thickness of 2.5 μm.
Step 4: being passed through SiH4N-type doping is carried out, under conditions of temperature is 1180 DEG C, forms n-type doping GaN layer L03,
With a thickness of 3 μm.
Step 5: 1100~1200 DEG C (preferably 1150 DEG C of this example) are cooled to, on n-type doping GaN layer L03, using 50~
The pressure growth of 400mbar (the preferred 150mbar of this example) forms AlN/GaN MQB layers of L04.
Form that there are many MQB layers of L04 of AlN/GaN, two exemplified below:
Mode one: the AlN thickness in variation growing AIN/MQB layers of GaN, AlN thickness is from thickness to thin, energy band as shown in Figure 2
The thickness ratio of schematic diagram, every centering AlN and GaN successively decreases, and the overall thickness for fading to MQB layers of L04 of 1: 1, AlN/GaN by 5: 1 is
30nm。
Mode two: variation growing AIN/MQB layers of GaN in AlN thickness, AlN thickness from thin to thick, energy band as shown in Figure 3
Schematic diagram, than being incremented by, the overall thickness for fading to MQB layers of L04 of 5: 1, AlN/GaN by 1: 1 is the thickness of every centering AlN and GaN
30nm。
In both the above mode, MQB layers of AlN/GaN only can carry out n-type doping to AlN, or only carry out N-type to GaN
Doping can also carry out n-type doping to AlN and GaN simultaneously respectively.Each pair of AlN/GaN layers of overall thickness control is in 1~10nm.
Step 6: reducing growth temperature to 740 DEG C, grow multiple quantum well layer L05, it is raw that low temperature is passed through trimethyl indium (TMIn)
Long InGaN Quantum Well increases the temperature to 840 DEG C of growth GaN quantum and builds.
Step 7: temperature continues to rise to 950 DEG C, is passed through trimethyl aluminium (TMAl), and growth forms AlGaN electronic barrier layer
L06。
Step 8: continuing to be warming up to 1050 DEG C, be passed through two luxuriant magnesium (Cp2Mg), growing P-type doped gan layer L07.
Two, the product structure feature formed:
It is mixed as shown in Figure 1, setting gradually buffer layer L01, unintentional doped gan layer L02, N-type in the same side of substrate L00
MQB layers of L04 of miscellaneous GaN layer L03, AlN/GaN laminated construction, multiple quantum well layer L05, electronic barrier layer L06 and p-type doped gan layer
L07。
Wherein:
MQB layers of L04 of AlN/GaN laminated construction are constituted by 2~8 pairs AlN/GaN layers.
Every AlN/GaN layers of a pair of with a thickness of 1~10nm in MQB layers of L04 of AlN/GaN laminated construction.
Every a pair of AlN is different from the thickness of GaN in MQB layers of L04 of AlN/GaN laminated construction, it is AlN/GaN layers each pair of in AlN
Thickness with GaN is than controlling between 0.2~5: 1.
The overall thickness of MQB layers of L04 of AlN/GaN laminated construction is controlled in 30 ± 10nm.
In order to illustrate structure feature of the invention, Fig. 2,3 are energy band schematic diagram, from Fig. 2,3 visible in growing AIN/GaN
At MQB layers, realize that energy band changes by controlling the thickness of every centering AlN.
Three, product test:
The epitaxial wafer of the epitaxial wafer of traditional handicraft production and above method of the present invention production is made respectively by identical method
At LED, after tested, the Injection Current of corresponding LED and the relational graph of lumen fraction are obtained respectively, as shown in Figure 4.In Fig. 4
Structure 1 is the epitaxial wafer made using the present invention, and structure 2 is the epitaxial wafer of traditional handicraft production.
It tests electric current and is stepped up 250mA by 0, test lumen fraction at interval of 10mA, can be seen by Fig. 4
Out, it as electric current is stepped up, is substantially improved using the epitaxial wafer luminous efficiency that the present invention makes, in 250mA, brightness is relatively passed
Technique of uniting promotes about 10%.By being inserted into AlN/GaN MQB layers in n-type doping GaN layer, the luminance of LED can be significantly improved
Degree.
Claims (5)
1. a kind of epitaxial wafer of high LED luminous efficiency, the same side of substrate set gradually buffer layer, unintentional doped gan layer,
N-type doping GaN layer, MQB layers of N-type AlN/GaN laminated construction, multiple quantum well layer, electronic barrier layer and p-type doped gan layer；It is special
Sign is that MQB layers of the N-type AlN/GaN laminated construction are formed by 2~8 pairs AlN/GaN layers；Each pair of AlN/GaN layers of overall thickness
For 1~10nm, it is AlN/GaN layers each pair of in the thickness ratio of AlN and GaN be 0.2~5: 1, the thickness ratio of adjacent pairs of AlN and GaN
Change in gradient.
2. the epitaxial wafer of high LED luminous efficiency according to claim 1, it is characterised in that the N-type AlN/GaN laminated construction
MQB layers of overall thickness is 30 ± 10nm.
3. the growing method of the epitaxial wafer of high LED luminous efficiency as described in claim 1, including successively outer in the same side of substrate
Prolong grown buffer layer, unintentional doped gan layer, n-type doping GaN layer, MQB layers of N-type AlN/GaN laminated construction, multiple quantum well layer,
Electronic barrier layer and p-type doped gan layer, it is characterised in that growth forms AlN/GaN laminated construction MQB in n-type doping GaN layer
Layer, the MQB layers of growth temperature is 1100~1200 DEG C, growth pressure is 50~400mbar；In growing AIN/GaN lamination knot
At MQB layers of structure, growth forms 2~8 pairs AlN/GaN layers；Each pair of AlN/GaN layers of overall thickness is 1~10nm, each pair of AlN/GaN
The growth thickness ratio of AlN and GaN is 0.2~5: 1 in layer.
4. the growing method of the epitaxial wafer of high LED luminous efficiency according to claim 3, it is characterised in that grown in N-type
At MQB layers of AlN/GaN laminated construction, at least one layer of progress n-type doping in AlN or GaN.
5. the growing method of the epitaxial wafer of high LED luminous efficiency according to claim 3, it is characterised in that grow the institute of formation
The overall thickness for stating MQB layers of AlN/GaN laminated construction is 30 ± 10nm.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101692477A (en) * | 1999-12-02 | 2010-04-07 | 美商克立股份有限公司 | High efficiency light emitters with reduced polarization-induced charges |
| CN103681985A (en) * | 2013-11-21 | 2014-03-26 | 华灿光电(苏州）有限公司 | Light-emitting diode epitaxial wafer and manufacture method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101692477A (en) * | 1999-12-02 | 2010-04-07 | 美商克立股份有限公司 | High efficiency light emitters with reduced polarization-induced charges |
| CN103681985A (en) * | 2013-11-21 | 2014-03-26 | 华灿光电(苏州）有限公司 | Light-emitting diode epitaxial wafer and manufacture method thereof |
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