CN105355725B - With the gallium nitride semiconductor light emitting diode and its preparation method for tilting quantum base structure - Google Patents
With the gallium nitride semiconductor light emitting diode and its preparation method for tilting quantum base structure Download PDFInfo
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- CN105355725B CN105355725B CN201410408878.9A CN201410408878A CN105355725B CN 105355725 B CN105355725 B CN 105355725B CN 201410408878 A CN201410408878 A CN 201410408878A CN 105355725 B CN105355725 B CN 105355725B
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 101
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 97
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 86
- 229910052738 indium Inorganic materials 0.000 claims abstract description 72
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 72
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 55
- 230000004888 barrier function Effects 0.000 claims abstract description 44
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 43
- 230000003247 decreasing effect Effects 0.000 claims abstract description 14
- 230000007423 decrease Effects 0.000 claims description 12
- 150000004767 nitrides Chemical class 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 4
- 230000004907 flux Effects 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 8
- 230000005012 migration Effects 0.000 abstract description 5
- 238000013508 migration Methods 0.000 abstract description 5
- 238000005036 potential barrier Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 230000005684 electric field Effects 0.000 abstract description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 2
- 230000008859 change Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 6
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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Abstract
The invention discloses a kind of gallium nitride semiconductor light emitting diode and its preparation method for having and tilting quantum and building structure.The light emitting diode includes n type gallium nitride layer, multi-quantum pit structure layer and the p-type gallium nitride layer stacked gradually, the multi-quantum pit structure layer includes alternately laminated plural indium gallium nitrogen well layer and plural indium gallium nitrogen barrier layer, and the molar content of indium is gradually successively decreased along the direction that n type gallium nitride layer is pointed to by p-type gallium nitride layer in each indium gallium nitrogen barrier layer.The light emitting diode can grow to be formed by MOCVD homepitaxy techniques.By technical scheme, polarized electric field caused by polarity effect in SQW can not only be reduced, combined efficiency of the electron hole in SQW can be increased, reduce the potential barrier of hole migration, electronics and hole is set to be more equally distributed in multiple SQWs, the leakage of electronics can also be effectively reduced, so as to improve luminous efficiency of the light emitting diode under high current density, solves the problems, such as that efficiency declines in light emitting diode.
Description
Technical field
It is more particularly to a kind of that there is the gallium nitride semiconductor for tilting quantum base structure the present invention relates to a kind of light emitting diode
Light emitting diode, belong to gallium nitride semiconductor device design and art of epitaxial growth.
Background technology
In gallium nitride based light emitting diode, because hole effective mass is big, carrier is caused to be distributed in MQW
It is uneven.The luminous of usual MQW is mainly derived from 1-2 SQW of P-type layer.When injected current density compared with
The problem of efficiency declines occurs in Gao Shi, light emitting diode.A pole in the light emitting diode SQW grown on C faces also be present
Change potential field so that the run-off the straight in trap of conduction band and valence band, electronics and hole are spatially separated from, and reduce radiation recombination in trap
Efficiency.
In specific words, when injected current density is higher, because hole is mainly distributed in 1-2 trap of P-type layer,
Carrier density so in these traps can increase with the increase of injected current density.The speed and carrier of auger recombination
3 powers of density are directly proportional, then high carrier density can cause auger recombination to increase sharply, and such luminous efficiency can be with
The increase of injected current density and decline.Meanwhile electronics leakage can also aggravate the decline of luminous efficiency.
It is traditional indium gallium nitrogen/nitride multi-quantum well conduction band schematic diagram to refer to shown in Fig. 1, and well layer 101 uses indium
Gallium nitrogen, barrier layer 102 use gallium nitride.In this configuration, due to building the stop restriction effect to hole, generally main, hole
It is distributed in 1-2 SQW of p-type.Electronic barrier layer 103 and the band jump of MQW result are small, and electronics is revealed
Barrier effect it is limited.
The content of the invention
In view of the shortcomings of the prior art, it is an object of the invention to provide a kind of gallium nitride for having and tilting quantum and building structure
Semiconductor light-emitting-diode, it is reduced polarity effect, is reduced the potential barrier of hole migration, made by the optimization of multi-quantum pit structure
Electronics and hole are more equally distributed in multiple SQWs, reduce the leakage of electronics, so as to suppress under high current density injection
The decline of combined efficiency, solve the problems, such as that efficiency declines in light emitting diode.
To realize aforementioned invention purpose, the technical solution adopted by the present invention is as follows：
N-type nitridation that is a kind of that there is the gallium nitride semiconductor light emitting diode for tilting quantum base structure, including stacking gradually
Gallium layer, multi-quantum pit structure layer and p-type gallium nitride layer, the multi-quantum pit structure layer include alternately laminated plural indium gallium nitrogen trap
Layer and plural indium gallium nitrogen barrier layer, and in the multi-quantum pit structure layer, n type gallium nitride is pointed to along by p-type gallium nitride layer
The direction of layer, the molar content of indium is gradually successively decreased in each indium gallium nitrogen barrier layer.
Further, the multi-quantum pit structure layer includes several to quantum well structure, and each of which is to quantum well structure bag
Containing the indium gallium nitrogen barrier layer and an indium gallium nitrogen being cascading along the direction by p-type gallium nitride layer sensing n type gallium nitride layer
Well layer.
Further, it is additionally provided with electronic barrier layer between the multi-quantum pit structure layer and the p-type gallium nitride layer.
It is described that there is the gallium nitride semiconductor luminous two for tilting quantum base structure as more one of preferred embodiment
Pole pipe includes low temperature nitride gallium layer, undoped gallium nitride layer, n type gallium nitride layer, the MQW set gradually along direction initialization
Structure sheaf, aluminum gallium nitride electronic barrier layer, p-type gallium nitride layer and p-type gallium nitride contact layer.
Further, it is described that there is the gallium nitride semiconductor light emitting diode for tilting quantum base structure also to include substrate.
Further, in the multi-quantum pit structure layer, the molar content of indium is successively decreased in each indium gallium nitrogen barrier layer form bag
Include it is linear successively decrease, it is Parabolic successively decrease, successively decreasing for step or successively decreasing for other forms.
Further, described inclination quantum, which builds structure, also includes its derived structure, such as close to the portion of n type gallium nitride layer
Component, which is built, uses gallium nitride, and uses inclined structure close to the part quantum base of p-type gallium nitride.
A kind of preparation method with the gallium nitride semiconductor light emitting diode for tilting quantum base structure, including：In substrate
On successively growth form n type gallium nitride layer, multi-quantum pit structure layer and p-type gallium nitride layer, the multi-quantum pit structure layer includes
Alternately laminated plural indium gallium nitrogen well layer and plural indium gallium nitrogen barrier layer,
Wherein, during growth forms multi-quantum pit structure layer, also by adjusting epitaxial growth parameters, make described more
In quantum well structure layer in each indium gallium nitrogen barrier layer indium molar content along by p-type gallium nitride layer point to n type gallium nitride layer side
To gradually successively decreasing.
Further, growth temperature of the epitaxial growth parameters including barrier layer, gallium source flux, indium source flux, reative cell
Pressure etc. can adjust the growth parameter(s) of indium molar content.
Further, the indium source may be selected from but be not limited to trimethyl indium（TMIn）.
Compared with prior art, advantages of the present invention includes：Polarity effect, drop are reduced using inclined multi-quantum pit structure
The potential barrier of low hole migration, makes electronics and hole be more equally distributed in multiple SQWs, reduces the leakage of electronics, so as to press down
The decline of the lower combined efficiency of high current density injection processed, solves the problems, such as that efficiency declines in light emitting diode.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments described in invention, for those of ordinary skill in the art, on the premise of not paying creative work,
Other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is that traditional indium gallium nitrogen/nitride multi-quantum well can band schematic diagram；
Fig. 2 is a kind of structural representation of the typical gallium nitride light-emitting diode that there is inclination quantum to build structure in the present invention
Figure；
Fig. 3 is a kind of typical MQW energy band schematic diagram for tilting quantum and building structure, indium during quantum is built in the present invention
Molar content version be step；
Fig. 4 is a kind of typical MQW energy band schematic diagram for tilting quantum and building structure, indium during quantum is built in the present invention
Molar content version be linear change；
Fig. 5 tilts the temperature and TMIn of quantum base structure to be grown among a typical embodiments of the invention using MOCVD
Flow control schematic diagram.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the accompanying drawings to the specific reality of the present invention
The mode of applying is described in detail.The example of these preferred embodiments is illustrated in the accompanying drawings.Shown in accompanying drawing and according to
What the embodiments of the present invention of accompanying drawing description were merely exemplary, and the present invention is not limited to these embodiments.
Here, it should also be noted that, in order to avoid having obscured the present invention because of unnecessary details, in the accompanying drawings only
Show and according to the solution of the present invention closely related structure and/or processing step, and eliminate little with relation of the present invention
Other details.
As it was previously stated, in view of the defects of existing gallium nitride semiconductor light emitting diode, inventor through studying for a long period of time and
A large amount of practices, it is able to propose technical scheme, it is mainly built by using the indium gallium nitrogen of gradual change component as quantum,
The energy band of indium gallium nitrogen MQW is designed as inclined structure, reduces polarized electric field caused by polarity effect in SQW, is increased
Add combined efficiency of the electron hole in SQW, reduce the potential barrier of hole migration, be more equally distributed in electronics and hole
In multiple SQWs, the leakage of electronics is reduced, so as to realize height of the gallium nitride semiconductor light emitting diode under high current density
Effect is luminous, solves the problems, such as that efficiency declines in light emitting diode.
Concretely, one aspect of the present invention provides a kind of gallium nitride semiconductor hair for having and tilting quantum base structure
Optical diode, including n type gallium nitride layer, multi-quantum pit structure layer and the p-type gallium nitride layer stacked gradually, the MQW knot
Structure layer includes alternately laminated plural indium gallium nitrogen well layer and plural indium gallium nitrogen barrier layer, and in the multi-quantum pit structure layer,
Along the direction that n type gallium nitride layer is pointed to by p-type gallium nitride layer, the molar content of indium is gradually successively decreased in each indium gallium nitrogen barrier layer.
Further, the multi-quantum pit structure layer includes several to quantum well structure, and each of which is to quantum well structure bag
Containing the indium gallium nitrogen barrier layer and an indium gallium nitrogen being cascading along the direction by p-type gallium nitride layer sensing n type gallium nitride layer
Well layer.
Another aspect of the present invention provides a kind of gallium nitride semiconductor light-emitting diodes for having and tilting quantum base structure
The preparation method of pipe, including：Growth forms n type gallium nitride layer, multi-quantum pit structure layer and p-type gallium nitride successively on substrate
Layer, the multi-quantum pit structure layer include alternately laminated plural indium gallium nitrogen well layer（Hereinafter referred to as " well layer "）With plural indium gallium nitrogen
Barrier layer（Hereinafter referred to as " barrier layer "）；
Also, during growth forms multi-quantum pit structure layer, also by adjusting epitaxial growth parameters, make described more
In quantum well structure layer in each indium gallium nitrogen barrier layer indium molar content along by p-type gallium nitride layer point to n type gallium nitride layer side
To gradually successively decreasing.
Wherein, in each indium gallium nitrogen barrier layer, indium constituent content successively decreases with various ways, including linear
Successively decrease, it is Parabolic successively decrease, step successively decreases, and other forms are successively decreased.
Further, described inclination quantum, which builds structure, also includes its derived structure, such as close to the portion of n type gallium nitride layer
Component, which is built, uses gallium nitride, and uses inclined structure close to the part quantum base of p-type gallium nitride.
Further, the indium constituent content successively decreases, and can be realized by epitaxy technology means, as grown in trap
The regulation of temperature, trimethyl indium flow, regulation of flow velocity and chamber pressure etc., but it is not limited to certain specific method.
As the typical embodiments of the present invention, one of which, which has, tilts the gallium nitride semiconductor hair that quantum builds structure
The epitaxial structure of optical diode is followed successively by from bottom to top：One layer of low temperature nitride gallium layer, one layer of undoped gallium nitride layer, one layer of N-type
Gallium nitride layer, several multi-quantum pit structure, one layer of aluminum gallium nitride electronic barrier layer, one layer of p-type nitrogen formed to indium gallium nitrogen and gallium nitride
Change gallium layer, one layer of p-type gallium nitride contact layer；In the multi-quantum pit structure of indium gallium nitrogen composition, indium mole contains in SQW
Measure it is constant, quantum build in indium gallium nitrogen indium molar content from close to P-type layer quantum build to close to N-type layer quantum build gradually pass
Subtract.
It is a kind of that there is the gallium nitride for tilting quantum base structure partly to lead in one more specifically case study on implementation refering to Fig. 2-Fig. 4
Body light emitting diode can be based on Sapphire Substrate 201 and be formed, wherein, one layer of low temperature nitride is grown in Sapphire Substrate 201
Gallium layer 202, its thickness are about 20-30 nm, to alleviate the stress that lattice mismatch is brought.One is grown on low temperature nitride gallium layer 202
The undoped gallium nitride layer 203 of layer, thickness 1000-2500nm；One layer of n type gallium nitride is grown on undoped gallium nitride layer 203
Layer 204, mixes elemental silicon, doping concentration is about 1el8-le20 per cubic centimeter, thickness 1000-2500nm, there is provided electronics is noted
Enter.It is some quantum well structures 205 to being made up of indium gallium nitrogen on n type gallium nitride layer 204, the thickness of wherein trap is about 2.5-
3nm, the thickness at base is about 3-15nm, is undoped.It is p-type aluminum gallium nitride electronic barrier layer 206 on quantum well structure 205, gold doping
Belong to magnesium, concentration is about 1el9-le21 per cubic centimeter, thickness about 20-40nm, to stop the spilling in the lower SQW of high injection
Electronics.It is p-type gallium nitride layer 207 on P-type electron barrier layer 206, mixes magnesium metal, doping concentration is about that le19-le20 is often stood
Square centimetre, thickness is about 100-200nm, to provide hole injection.It is a gallium nitride contact layer on p-type gallium nitride layer 207
208, also it is p-type, mixes magnesium metal, doping concentration is that le20 is per cubic centimeter, thickness 10-30nm, and it, which is acted on, provides high sky
Cave concentration, to form the Ohmic contact of p-type.
In the multi-quantum pit structure, well layer is indium gallium nitrogen, and barrier layer is also indium gallium nitrogen, from P-type layer to N-type layer, in barrier layer
The molar content of indium is from low to high.In band structure, an inclined multi-quantum pit structure is formed, close to N-type region, the taboo at base
Bandwidth is wider, narrower close to p type island region, the energy gap at base.The indium molar content of last barrier layer should rub according to the indium of well layer
Your content is appropriately designed so that SQW has enough limitations.For example for blue-ray LED, the molar content of indium is in trap
0.16（If not following special instruction, refers both to degree）, then the indium molar content of last barrier layer may be designed as
0.1。
Please continue to refer to Fig. 3 show a kind of 5 pairs of inclinations MQW in the implementation case can band schematic diagram, from close
It is well layer that p-type is followed successively by 301,302,303,304,305,306 to the numbering close to N-type, barrier layer, and 307 be electronic barrier layer.Amount
The molar content variation pattern of indium is step during son is built.It should be appreciated that the present embodiment is only illustrating in each base
One specific mode of indium molar content change, the invention is not limited in the present embodiment.
Please continue to refer to Fig. 4 show in the implementation case another 5 pairs of inclinations MQWs can band schematic diagram, from by
It is well layer that nearly p-type is followed successively by 401,402,403,404,405,406 to the numbering close to N-type, barrier layer, and 407 be electronic barrier layer.
The molar content variation pattern of indium is linear change during quantum is built.It should be appreciated that the present embodiment is only each to illustrate
The specific mode that indium molar content changes in base, the invention is not limited in the present embodiment.
By technical scheme, polarized electric field caused by polarity effect in SQW can be not only reduced, can be increased
Combined efficiency of the electron hole in SQW, reduce the potential barrier of hole migration, make electronics and hole be more equally distributed in it is more
In individual SQW, moreover it is possible to the leakage of electronics is effectively reduced, so as to improve luminous efficiency of the light emitting diode under high current density,
Solve the problems, such as that efficiency declines in light emitting diode.
Have the gallium nitride semiconductor light emitting diode for tilting quantum base structure can be with a variety of extension sides in the implementation case
Method is formed, and will illustrate the preparation of the light emitting diode by taking the scheme of metallo-organic compound deposition growing epitaxial layer as an example below
Journey, it can include：
I) the low temperature nitride gallium layer 202 that growth thickness is about 25nm in Sapphire Substrate 201, growth temperature control exist
Between 500-550 degrees Celsius, growth pressure is between 300-700mbar；
2) on low temperature nitride gallium layer 202 growth thickness be 1500nm undoped gallium nitride layer 203, growth temperature control
System is at 1000-1100 degrees Celsius, and growth pressure is between 200-500mbar；
3) growth thickness is 2000nm n type gallium nitride layer 204 on undoped gallium nitride layer 203, and growth temperature controls
At 1000-1200 degrees Celsius, for growth pressure between 100-500Torr, impurity is elemental silicon, and doping concentration is that 5el8 is every
Cubic centimetre；
4) five pairs of SQWs 205 being made up of indium gallium nitrogen, wherein indium gallium nitrogen well layer are grown on the gallium nitride layer 204 of N-type
Thickness be 2.5 nm, the thickness of indium gallium nitrogen barrier layer is 5 nm, the molar content point of indium in barrier layer 301,302,303,304,305
Wei 0.1,0.08,0.06,0.04,0.02；
Wherein, the change of indium molar constituent content is controlled to change by the flow of trimethyl indium, realizes that indium contains in barrier layer
The change of amount.Refer to shown in Fig. 5,501 be SQW（Well layer）The change of the flow of trimethyl indium in growth course, 502 are
Quantum is built（Barrier layer）The change of trimethyl indium flow in growth course；
5) on SQW 205 growing P-type gallium nitride layer 206, thickness 20nm mixes magnesium metal, and doping concentration is
3e19 is per cubic centimeter, and the molar content of aluminium is 0.2, between growth temperature is 950-1000 degrees Celsius, growth pressure 150-
Between 400mbar；
6) on gallium nitride layer 206 growing P-type gallium nitride layer 207, thickness 100nm mixes magnesium metal, and doping concentration is
3e19 is per cubic centimeter, and growth temperature is 900-1000 degrees Celsius, and growth pressure is between 100-500mbar；
7) contact layer gallium nitride 208, thickness 20nm are grown on the gallium nitride layer 207 of p-type, mixes magnesium metal, doping is dense
Spend for le20 it is per cubic centimeter, growth temperature be 800-900 degrees Celsius between, growth pressure is between 100-400mbar.
It is pointed out that the technical concepts and features of above-described embodiment only to illustrate the invention, ripe its object is to allow
Present disclosure can be understood and implement according to this by knowing the personage of technique, and the protection model of the present invention can not be limited with this
Enclose.Any equivalent change or modification in accordance with the spirit of the invention, it should all be included within the scope of the present invention.
Claims (6)
1. it is a kind of have tilt the gallium nitride semiconductor light emitting diode that quantum builds structure, it is characterised in that including along direction initialization
Undoped gallium nitride layer, the thickness that low temperature nitride gallium layer that the thickness stacked gradually is 20-30nm, thickness are 1000-2500nm
Aluminum gallium nitride electronic barrier layer that n type gallium nitride layer, multi-quantum pit structure layer, thickness for 1000-2500nm are 20-40nm, thickness
Spend the p-type gallium nitride contact layer for being 10-30nm for 100-200nm p-type gallium nitride layer and thickness, the multi-quantum pit structure layer
Quantum well structure, each of which are included along by p-type gallium nitride layer to quantum well structure and point to n type gallium nitride layer comprising plural number
The thickness that is cascading of direction be 3-15nm indium gallium nitrogen barrier layer and a thickness be 2.5-3nm indium gallium nitrogen well layer,
In the multi-quantum pit structure layer, along the direction that n type gallium nitride layer is pointed to by p-type gallium nitride layer, in each indium gallium nitrogen barrier layer
The molar content of indium is gradually successively decreased.
2. according to claim 1 have the gallium nitride semiconductor light emitting diode for tilting quantum base structure, its feature exists
In it also includes substrate.
3. according to claim 1 have the gallium nitride semiconductor light emitting diode for tilting quantum base structure, its feature exists
In in the multi-quantum pit structure layer, the form that the molar content of indium is successively decreased in each indium gallium nitrogen barrier layer is successively decreased, thrown including linear
Successively decreasing for thing line style or successively decreasing for step.
4. having according to any one of claim 1,2,3 tilts the gallium nitride semiconductor light-emitting diodes that quantum builds structure
Pipe, it is characterised in that：The quantum that tilts builds the derived structure that structure is replaced with the inclination quantum base structure, described
In derived structure, built close to the part quantum of n type gallium nitride layer and use gallium nitride, and the part quantum close to p-type gallium nitride is built
Structure is built using described inclination quantum.
5. a kind of have the preparation method for tilting the gallium nitride semiconductor light emitting diode that quantum builds structure, it is characterised in that including：
Growth forms low temperature nitride gallium layer, undoped gallium nitride layer, n type gallium nitride layer, multi-quantum pit structure layer, gallium aluminium successively on substrate
Nitrogen electronic barrier layer, p-type gallium nitride layer and p-type gallium nitride contact layer, the multi-quantum pit structure layer include alternately laminated answer
Number indium gallium nitrogen well layer and plural indium gallium nitrogen barrier layer；It is also, outer by adjusting during growth forms multi-quantum pit structure layer
Epitaxial growth parameter, make the molar content of indium in each indium gallium nitrogen barrier layer in the multi-quantum pit structure layer along by p-type gallium nitride layer
Gradually successively decrease in the direction for pointing to n type gallium nitride layer.
6. according to claim 5 have the preparation method for tilting the gallium nitride semiconductor light emitting diode that quantum builds structure, its
It is characterised by that the epitaxial growth parameters include growth temperature, gallium source flux, indium source flux or the chamber pressure of barrier layer.
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| CN107305919A (en) * | 2016-04-18 | 2017-10-31 | 中国科学院半导体研究所 | P-type gallium nitride and preparation method thereof, the semiconductor devices comprising it |
| CN108649108B (en) * | 2018-05-15 | 2019-10-18 | 芜湖德豪润达光电科技有限公司 | Mqw light emitting layer and light emitting diode and preparation method thereof |
| CN109390443B (en) * | 2018-12-04 | 2024-02-09 | 西安赛富乐斯半导体科技有限公司 | Semi-polar gallium nitride single quantum well layer light-emitting device and manufacturing method thereof |
| CN112436082A (en) * | 2020-10-31 | 2021-03-02 | 扬州大学 | LED epitaxial structure for improving distribution uniformity of current carriers in luminous zone and growth method thereof |
| CN114038961B (en) * | 2021-10-26 | 2023-06-16 | 重庆康佳光电技术研究院有限公司 | Light emitting diode and display panel |
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