CN108321267A - Nitride semiconductor structure and semiconductor light-emitting elements - Google Patents
Nitride semiconductor structure and semiconductor light-emitting elements Download PDFInfo
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- CN108321267A CN108321267A CN201810450545.0A CN201810450545A CN108321267A CN 108321267 A CN108321267 A CN 108321267A CN 201810450545 A CN201810450545 A CN 201810450545A CN 108321267 A CN108321267 A CN 108321267A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 161
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 53
- 230000004888 barrier function Effects 0.000 claims description 43
- 238000010276 construction Methods 0.000 claims description 26
- 229910002704 AlGaN Inorganic materials 0.000 claims description 15
- 239000011777 magnesium Substances 0.000 claims description 14
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 166
- 239000011229 interlayer Substances 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 8
- 230000004913 activation Effects 0.000 abstract description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 229910002601 GaN Inorganic materials 0.000 description 15
- 239000000956 alloy Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000004411 aluminium Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910019080 Mg-H Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention is about a kind of nitride semiconductor structure and semiconductor light-emitting elements.The nitride semiconductor structure includes a n type semiconductor layer and a p type semiconductor layer, is configured with a luminescent layer in n type semiconductor layer and P-type semiconductor interlayer, luminescent layer provides layer with P-type semiconductor interlayer configured with a hole, and it is InGaN In that hole, which provides layer,xGa1‑xN(0<x<1), and hole provides layer doped with a concentration of 1017‑1020cm‑3The 4th major element.The semiconductor light-emitting elements are in the N-type electrode and P-type electrode that cooperatively provide electric energy on a substrate comprising above-mentioned nitride semiconductor structure and two.Hole concentration can be improved by adulterating the 4th major element, and reduce the not activation phenomenon caused by Mg H bonds, so that Mg is activated and the useful effect with receptor, and then increase luminous efficiency.
Description
The present invention be proposed on 01 25th, 2013 application No. is 201310029644.9, it is entitled《Nitridation
Object semiconductor structure and semiconductor light-emitting elements》Application for a patent for invention divisional application.
Technical field
The present invention refers in particular to a kind of with hole about a kind of nitride semiconductor structure and semiconductor light-emitting elements
The nitride semiconductor structure and semiconductor light-emitting elements for providing layer, belong to technical field of semiconductors.
Background technology
In recent years, the application surface of light emitting diode is increasingly extensive, it has also become indispensable critical elements in daily life；
And light emitting diode is expected to replace lighting apparatus now, becomes the solid-state lighting elements of the following new generation, therefore develop Gao Jie
The light emitting diode of energy high efficiency and higher power will be future trend；Nitride LED is due to, mercury-free small with component size
The advantages that pollution, luminous efficiency height and long lifespan, it has also become one of most emerging photoelectric semiconductor material, and third main group nitride
Emission wavelength almost cover the range of visible light, more become the light LED material of great potential.
The third main group nitride such as materials such as indium nitride (InN), gallium nitride (GaN) and aluminium nitride (AlN) are wide with one
Band gap, plays the part of considerable role in optoelectronic semiconductor component, energy band range from direct band gap be 0.7eV's
InN, arrives the GaN of 3.4eV, the even AlN of 6.2eV, the optical wavelength range sent out from red, green, blue, to deep UV；And the
Three main group nitride-based semiconductors need PN to engage on as light-emitting component, specifically, necessarily being formed N-type nitride-based semiconductor
Layer and P-type nitride semiconductor, and be usually to adulterate such as Si or Sn N-types admixture to form N-type nitride-based semiconductor
Layer, and on forming P-type nitride semiconductor, usually use Mg as p-type admixture；However, Mg is easy to be bonded with H, shape
At magnesium-hydrogen compound (Mg-H Complexes), cause above-mentioned p-type admixture that can not play the property of receptor, offer is provided
Hole concentration is greatly reduced so that therefore the efficiency that light-emitting component can not bring into normal play also has Low ESR (low-
Resistance P-type nitride semiconductor) is not easy to be formed by traditional technology.
For example, when forming semiconductor layer (such as the gallium nitride) being made of p-type nitride, it will usually make
Use NH3Gas is used as the source of nitrogen, and during epitaxy (such as vapor deposition etc.), high temperature can make NH3It decomposes and generates nitrogen original
Son and hydrogen atom, hydrogen atom can be formed with the p-type admixture (such as Mg) for being used as receptor in above-mentioned semiconductor layer and are bonded, make
It is ineffective to obtain above-mentioned p-type admixture, doping concentration is caused not promoted effectively；Furthermore the and work due to magnesium in gallium nitride
Changing can be very big so that extremely inefficient (less than 10%) of hole activation；So the hole concentration of p-type gallium nitride is difficult to improve；
Therefore, high hole concentration in order to obtain, it is necessary to reduce Mg and H and combine so that p-type gallium nitride can show it is sufficiently low
Impedance, and then reach more preferably luminous efficiency.
Still there is in view of above-mentioned existing nitride semiconductor luminescent element in actual implementation the missing of many places, therefore,
It is still one of this field urgent problem to be solved to develop a kind of novel nitride semiconductor luminescent element.
Invention content
In order to solve the above technical problems, the main object of the present invention is to provide a kind of nitride semiconductor structure, pass through
Hole provides layer and adulterates the 4th major element to improve hole concentration, and reduces the not activation phenomenon caused by Mg-H is bonded,
So that Mg is activated and the useful effect with receptor, so that hole, which provides layer, has more high hole concentration, thus provides more
Hole enter luminescent layer, increase the case where electron hole combines, to obtain good luminous efficiency.
Another object of the present invention is to provide a kind of semiconductor light-emitting elements, and including at least has above-mentioned nitride partly to lead
Body structure.
In order to achieve the above object, the present invention provides a kind of nitride semiconductor structure, it includes a n type semiconductor layer and one
P type semiconductor layer is configured with a luminescent layer, the luminescent layer and institute in the n type semiconductor layer and the P-type semiconductor interlayer
It states P-type semiconductor interlayer and provides layer configured with a hole, it is InGaN In that the hole, which provides layer,xGa1-xN, wherein 0<x<1,
And the hole provides layer doped with a concentration of 1017-1020cm-3The 4th major element.
Specific implementation mode according to the present invention, it is preferable that in above-mentioned nitride semiconductor structure, the 4th main group
Element is carbon.
Specific implementation mode according to the present invention, it is preferable that in above-mentioned nitride semiconductor structure, the hole provides
Layer is more than 10 doped with concentration18cm-3P-type admixture.
Specific implementation mode according to the present invention, it is preferable that in above-mentioned nitride semiconductor structure, the p-type admixture
For magnesium.
Specific implementation mode according to the present invention, it is preferable that in above-mentioned nitride semiconductor structure, the luminescent layer tool
There is multiple quantum well construction, and the energy gap of hole offer layer is more than the energy gap of the well layer of the multiple quantum well construction.
Specific implementation mode according to the present invention, it is preferable that in above-mentioned nitride semiconductor structure, the hole provides
The thickness of layer is 1-100nm.
Specific implementation mode according to the present invention, it is preferable that in above-mentioned nitride semiconductor structure, the hole provides
Layer is InGaN InxGa1-xN, wherein x are 0<x≤0.1.
Specific implementation mode according to the present invention, it is preferable that in above-mentioned nitride semiconductor structure, the hole provides
Layer is configured with a p-type carrier barrier layer with the P-type semiconductor interlayer, and the p-type carrier barrier layer is by having higher than described
Made by the material of the energy gap of luminescent layer.
Specific implementation mode according to the present invention, it is preferable that in above-mentioned nitride semiconductor structure, the luminescent layer with
The N-type semiconductor interlayer is configured with a N-type carrier barrier layer, and the N-type carrier barrier layer is higher than described shine by having
Made by the material of the energy gap of layer.
Specific implementation mode according to the present invention, it is preferable that in above-mentioned nitride semiconductor structure, the luminescent layer with
The N-type semiconductor interlayer is configured with a N-type carrier barrier layer, and the N-type carrier barrier layer is higher than described shine by having
Made by the material of the energy gap of layer.
In the present invention, which includes a n type semiconductor layer and a p type semiconductor layer, in the N
Type semiconductor layer is configured with a luminescent layer with the P-type semiconductor interlayer, and the luminescent layer is configured with the P-type semiconductor interlayer
There is a hole to provide layer, it is InGaN In that the hole, which provides layer,xGa1-xN, wherein 0<x<1, it is preferable that the numberical range of x
It is 0<x≤0.1；In addition, the hole provides layer doped with a concentration of 1017-1020cm-3The 4th major element, if the 4th master
Race's element doping concentration is less than 1017cm-3, can not have the effect of hole offer, if the 4th major element doping concentration is more than
1020cm-3, then the problem of resistance value is got higher is will produce, preferred doping concentration is 8 × 1017-5×1018cm-3, wherein described
Four major elements may be, for example, carbon.
In addition, above-mentioned hole provides layer is more than 10 doped with concentration18cm-3P-type admixture, and hole provide layer thickness
Degree is 1-100nm；Wherein p-type admixture may be, for example, magnesium.
In one embodiment of this invention, multiple quantum well construction can be by the well layer of InGaN and the barrier layer of gallium nitride
Alternately storehouse is formed；And the energy gap of hole offer layer is greater than the energy gap of the well layer of multiple quantum well construction so that hole can
Into in the well layer of multiple quantum well construction, probability, further improving luminous efficiency are combined with hole to increase electronics.
In addition, in one embodiment of this invention, hole provides layer and may be configured with a p-type carrier with P-type semiconductor interlayer
Barrier layer (being, for example, p-type aluminium gallium nitride alloy etc.), and p-type carrier barrier layer is by made with the material more than the energy gap of luminescent layer
At, for example, when luminescent layer is multiple quantum well construction, then the energy gap of p-type carrier barrier layer is more than multiple quantum trap knot
The energy gap of the barrier layer of structure, enters to avoid electron escape in p type semiconductor layer, has and slows down electronics rate travel, and increases
The effect of being stranded in the luminescent layer time；And it also may be configured with a N-type carrier barrier layer (example in luminescent layer and N-type semiconductor interlayer
Such as it is N-type aluminium gallium nitride alloy), and N-type carrier barrier layer is made by the material with the energy gap more than luminescent layer, similarly, N-type
Carrier barrier layer escapes into avoid hole in n type semiconductor layer made by the material with the energy gap higher than luminescent layer,
To improve the probability of electron hole combination.
The present invention also provides a kind of semiconductor light-emitting elements, and including at least has：
One substrate；
One n type semiconductor layer, is disposed on the substrate；
One luminescent layer is configured on the n type semiconductor layer；
One hole provides layer, is configured on the luminescent layer, and it is InGaN In that the hole, which provides layer,xGa1-xN,
In 0<x<1, and the hole provides layer doped with a concentration of 1017-1020cm-3The 4th major element；
One p type semiconductor layer is configured at the hole and provides on layer；
One N-type electrode is configured at Ohmic contact on the n type semiconductor layer；And
One P-type electrode is configured at Ohmic contact on the p type semiconductor layer.
The present invention semiconductor light-emitting elements on a substrate include above-mentioned nitride semiconductor structure and two match
Close N-type electrode and P-type electrode that ground provides electric energy；Hole provides the 4th major element raising hole concentration of layer as a result, and drops
The low not activation phenomenon caused by Mg-H is bonded makes Mg activate and the useful effect with receptor, so that hole provides
Layer has higher hole concentration, thus provides more holes and enters luminescent layer, to increase the case where electron hole combines, with
Just semiconductor light-emitting elements can show sufficiently low impedance, and then obtain good luminous efficiency.
Furthermore to solve to arrange phenomenon because of epitaxy difference caused by crystal lattice difference, also it can be formed with a buffering in substrate surface
Layer, the buffer layer are aluminium gallium nitride alloy AlGayN1-yMaterial, wherein 0<y<1.
Description of the drawings
Fig. 1 is the diagrammatic cross-section for the nitride semiconductor structure that a preferred embodiment of the present invention provides.
Fig. 2 is the semiconductor light emitting element made by the nitride semiconductor structure that is provided according to the preferred embodiment of the present invention
The diagrammatic cross-section of part.
Reference sign：
1 substrate, 2 n type semiconductor layer
21 N-type electrode, 3 p type semiconductor layer
31 P-type electrode, 4 luminescent layer
5 holes provide 6 p-type carrier barrier layer of layer
8 buffer layer of 7N type carriers barrier layer
Specific implementation mode
The purpose of the present invention and its structure design functionally the advantages of, will be said according to the following drawings and preferred embodiment
It is bright, to have deeper into the present invention and specifically understand.
First, in the following description, it should be understood that when point out one layer (or film) or a structure configuration another
When "above" or "below" a substrate, another layer (or film) or another structure, can it is " direct " be located at other substrates, layer (or film) or
Another structure also or between the two there is more than one middle layer to be configured in a manner of " indirect ", it is each to can refer to description of the drawings
Layer position.
Show refering to Figure 1, it is the section for the nitride semiconductor structure that a preferred embodiment of the present invention provides
It is intended to, it includes having a n type semiconductor layer 2 and a p type semiconductor layer 3, between n type semiconductor layer 2 and p type semiconductor layer 3
Configured with a luminescent layer 4 (active layer), layer 5, hole are provided configured with a hole between luminescent layer 4 and p type semiconductor layer 3
Offer layer 5 is InGaN InxGa1-xN, wherein 0<x<The numberical range of 1, preferred x are 0<x≤0.1；In addition, hole provides
Layer 5 is doped with a concentration of 1017-1020cm-3The 4th major element (preferably carbon)；In this present embodiment, n type semiconductor layer 2
It is n type gallium nitride based semiconductor layer, and p type semiconductor layer 3 is the gallium nitride semiconductor layer of p-type.
In addition, above-mentioned hole provides layer 5 is more than 10 doped with concentration18cm-3P-type admixture (may be, for example, magnesium), and it is empty
The preferred thickness that cave provides layer 5 is 1-100nm.
Furthermore above-mentioned luminescent layer 4 has multiple quantum well construction (multiple quantum well, MQW)；Wherein,
Multiple quantum well construction can be by the well layer (well) of InGaN and barrier layer (barrier) the alternating storehouse institute shape of gallium nitride
At；And the energy gap (bandgap energy) of hole offer layer 5 is more than the energy gap of the well layer of multiple quantum well construction so that hole
It can enter in the well layer of multiple quantum well construction, probability, further improving luminous efficiency are combined with hole to increase electronics.
In addition, hole, which provides, may be configured with a p-type carrier barrier layer 6 between layer 5 and p type semiconductor layer 3, and p-type carrier hinders
Interlayer 6 is made by the material with the energy gap more than luminescent layer 4；In this present embodiment, it is p-type aluminium gallium nitride alloy (P-
AlGaN), enter in p type semiconductor layer 3 to avoid electron escape, have and slow down electronics rate travel, and increase and be stranded in hair
The time of photosphere 4；And also may be configured with a N-type carrier barrier layer 7 between luminescent layer 4 and n type semiconductor layer 2, and N-type carrier hinders
Interlayer 7 is made by the material with the energy gap higher than luminescent layer 4；In this present embodiment, it is N-type aluminium gallium nitride alloy (N-
AlGaN), hole is thus avoided to escape into n type semiconductor layer 2.
According to the nitride semiconductor structure of above-described embodiment in actual implementation in use, being adulterated since hole provides layer 5
Have a concentration of 1017-1020cm-3The 4th major element, the nitrogen-atoms of pentavalent is replaced using the 4th major element, thus more one
Positively charged hole so that hole, which provides layer, can have high hole concentration, and the 4th above-mentioned major element may be, for example, carbon (C), silicon
(Si), germanium (Ge), tin (Sn), lead (Pb) etc., wherein preferably carbon, the reason for this is that：During epitaxy, carbon can with by ammonia
The hydrogen that qi leel solves reacts and forms stable compound CH4, and it is detached from nitride-based semiconductor, therefore the content of H reduces, it is also related
So that therefore the case where Mg-H bonds reduces, cause Mg that there is the useful effect of ion kenel, therefore, hole, which provides layer 5, to be had
There is high hole concentration, thus more holes are provided enter luminescent layer 4, and then increase the case where electron hole combines.
It please refers to shown in Fig. 2, above-mentioned nitride semiconductor structure can be applied in semiconductor light-emitting elements, and Fig. 2 is root
The diagrammatic cross-section of the semiconductor light-emitting elements made by nitride semiconductor structure provided according to the preferred embodiment of the present invention,
The semiconductor light-emitting elements, which include at least, to be had：
One substrate 1；
One n type semiconductor layer 2, is configured on substrate 1；
One luminescent layer 4, is configured on n type semiconductor layer 2；Wherein, luminescent layer 4 has multiple quantum well construction；
One hole provides layer 5, is configured on luminescent layer 4, and it is InGaN In that hole, which provides layer 5,xGa1-xN, wherein 0<x
<1, preferably 0<x≤0.1；Furthermore hole provides layer 5 doped with a concentration of 1017-1020cm-3The 4th major element (preferably
For carbon)；Wherein, the thickness that hole provides layer 5 is preferably 1-100nm, and can be more than 10 doped with concentration18cm-3P-type admixture
(may be, for example, magnesium), and the energy gap of hole offer layer 5 is more than the energy gap of the well layer of multiple quantum well construction；
One p type semiconductor layer 3 is configured at hole and provides on layer 5；
One N-type electrode 21, is configured at Ohmic contact on n type semiconductor layer 2；And
One P-type electrode 31, is configured at Ohmic contact on p type semiconductor layer 3；Wherein, N-type electrode 21, P-type electrode 31
Electric energy is cooperatively provided, and with llowing group of materials but can be not limited only to made by these materials：Titanium, aluminium, gold, chromium, nickel, platinum and
Its alloy etc., and its production method is and the simultaneously emphasis of non-present invention well known to persons skilled in the art, therefore, no
It is repeated here in the present invention again.
In addition, hole provides may be configured with a p-type carrier barrier layer 6 between layer 5 and p type semiconductor layer 3, and in luminescent layer 4
A N-type carrier barrier layer 7 is configured between n type semiconductor layer 2, and N-type carrier barrier layer 7, p-type carrier barrier layer 6 are all by having
Have made by the material higher than the energy gap of luminescent layer 4；Furthermore to solve to arrange phenomenon because of epitaxy difference caused by crystal lattice difference, also
It can be formed with a buffer layer 8 in 1 surface of substrate, buffer layer 8 is aluminium gallium nitride alloy AlGayN1-yMaterial, wherein 0<y<1.
As a result, by the implementation explanation of above-mentioned nitride semiconductor structure it is found that the semiconductor light-emitting elements of the present invention are logical
It crosses hole and not activation phenomenon of the 4th major element admixture reduction of layer 5 caused by Mg-H is bonded is provided, Mg is made to activate and have
There is the useful effect of receptor, so that hole, which provides layer 5, has high hole concentration, more holes be provided and enter luminescent layer,
Increase the case where electron hole combines, so that semiconductor light-emitting elements can show sufficiently low impedance, and then obtains good
Luminous efficiency.
In conclusion the nitride semiconductor structure and semiconductor light-emitting elements of the present invention, can be taken off really by above-mentioned
The embodiment of dew reaches desired use effect.
Above-mentioned disclosed attached drawing and explanation, are merely a preferred embodiment of the present invention, not the protection to limit of the invention
Range；Persons skilled in the art, feature according to the present invention, the other equivalent change or modifications done all should be regarded as not
It is detached from protection scope of the present invention.
Claims (12)
1. a kind of nitride semiconductor structure, which is characterized in that including：
One first type doping semiconductor layer；
One luminescent layer, including a multiple quantum well construction；
One second type doping semiconductor layer, wherein luminescent layer configuration is in the first type doping semiconductor layer and described second
Between type doping semiconductor layer；
(AlGaN based) the second type carrier barrier layer on the bases one AlGaN, be configured at the second type doping semiconductor layer with
Between the luminescent layer, and the multiple quantum well construction includes the barrier layers of the multiple GaN base plinth being alternately stacked and multiple
The well layer on the bases InGaN；And
The electric hole on the bases one InGaN provides layer, is configured at the second type carrier barrier layer of the luminescent layer and the bases the AlGaN
Between, the electric hole on the bases InGaN is provided in layer is more than 10 doped with concentration17cm-3Column IV element.
2. a kind of nitride semiconductor structure, which is characterized in that including：
One first type doping semiconductor layer；
One luminescent layer, including a multiple quantum well construction；
One second type doping semiconductor layer, wherein the luminescent layer is configured at the first type doping semiconductor layer and described second
Between type doping semiconductor layer；And
The electric hole on the bases one InGaN provides layer, is configured between the luminescent layer and the second type doping semiconductor layer, and institute
The electric hole for stating the bases InGaN is provided in layer doped with concentration more than 1017cm-3Column IV element, wherein the multiple quantum trap knot
Structure includes the barrier layer for the multiple GaN base plinth being alternately stacked and the well layer on the bases multiple InGaN, and the bases the InGaN
The energy gap of electric hole offer layer is more than the energy gap of the well layer on the bases InGaN of the multiple quantum well construction.
3. a kind of nitride semiconductor structure, which is characterized in that including：
One first type doping semiconductor layer；
The first type carrier barrier layer on the bases one AlGaN；
One luminescent layer, including a multiple quantum well construction；
The second type carrier barrier layer on the bases one AlGaN；
One second type doping semiconductor layer, wherein the luminescent layer is configured at the first type doping semiconductor layer and described second
Between type doping semiconductor layer, the first type carrier barrier layer on the bases AlGaN is configured at the first type doped semiconductor
Between layer and the luminescent layer, the second type carrier barrier layer on the bases AlGaN is configured at the second type doped semiconductor
Layer the luminescent layer between, and the multiple quantum well construction include the multiple GaN base plinth being alternately stacked barrier layer and
The well layer on multiple bases InGaN；And
The electric hole on the bases one InGaN provides layer, the electric hole offer layer on the bases InGaN be configured at the luminescent layer with it is described
Between the second type carrier barrier layer on the bases AlGaN, the electric hole on the bases InGaN, which provides, to be more than in layer doped with concentration
1017cm-3Column IV element.
4. a kind of nitride semiconductor structure, which is characterized in that including：
One first type doping semiconductor layer；
One luminescent layer, including a multiple quantum well construction；
One second type doping semiconductor layer, wherein the luminescent layer is configured at the first type doping semiconductor layer and described second
Between type doping semiconductor layer and the luminescent layer, and the multiple quantum well construction includes the multiple GaN base plinth being alternately stacked
Barrier layer and the bases multiple InGaN well layer；
The second type carrier barrier layer on the bases one AlGaN, be configured at the second type doping semiconductor layer and the luminescent layer it
Between；And
The electric hole on the bases one InGaN provides layer, is configured between the luminescent layer and the second type doping semiconductor layer,
The electric hole on the wherein described bases InGaN is provided in layer is more than 10 doped with concentration18cm-3Second type admixture and concentration be more than
1017cm-3Carbon.
5. a kind of nitride semiconductor structure, which is characterized in that including：
One first type doping semiconductor layer；
One luminescent layer, including a multiple quantum well construction；
The electric hole on the bases one InGaN provides layer；And
One second type doping semiconductor layer, wherein the luminescent layer be configured at the first type doping semiconductor layer with it is described
Between the electric hole on the bases InGaN provides layer, and the electric hole on the bases the InGaN provides layer and is configured at the luminescent layer and described the
Between two type doping semiconductor layers, the multiple quantum well construction include the multiple GaN base plinth being alternately stacked barrier layer and
The well layer on multiple bases InGaN, and the bases the InGaN electric hole provide layer energy gap be more than the multiple quantum well construction it
The energy gap of the well layer on the bases InGaN, the electric hole on the bases InGaN is provided in layer is more than the second of 1018cm-3 doped with concentration
Type admixture and concentration are more than 1017cm-3Carbon.
6. a kind of nitride semiconductor structure, which is characterized in that including：
One first type doping semiconductor layer；
One luminescent layer, including a multiple quantum well construction；
One second type doping semiconductor layer, wherein the luminescent layer is configured at the first type doping semiconductor layer and described second
Between type doping semiconductor layer, and the multiple quantum well construction include the multiple GaN base plinth being alternately stacked barrier layer and
The well layer on multiple bases InGaN；
The first type carrier barrier layer on the bases one AlGaN, be configured at the first type doping semiconductor layer and the luminescent layer it
Between；
The second type carrier barrier layer on the bases one AlGaN, be configured at the luminescent layer and the second type doping semiconductor layer it
Between；And
The electric hole on the bases one InGaN provides layer, is configured between the luminescent layer and the second type doping semiconductor layer, described
The electric hole on the bases InGaN is provided in layer is more than 10 doped with concentration18cm-3Second type admixture and concentration be more than 1017cm-3's
Carbon.
7. a kind of nitride semiconductor structure, which is characterized in that including：
One first type doping semiconductor layer；
One luminescent layer, including a multiple quantum well construction, wherein the multiple quantum trap structure includes the multiple resistances being alternately stacked
Barrier layer and multiple well layers；
One includes that the second type electric hole of the GaN base plinth of indium provides layer, the second type electric hole of the GaN base plinth provide in layer doped with
Concentration is more than 1018cm-3Second type admixture and concentration be more than 1017cm-3Carbon；And
One second type doping semiconductor layer, wherein luminescent layer are configured at the first type doping semiconductor layer and the second type
Between the electric hole of GaN base plinth provides layer, the second type electric hole of the second type GaN base plinth provide layer be configured at the luminescent layer with
And the second type doping semiconductor layer.
8. nitride semiconductor structure as claimed in claim 1,2 or 3, which is characterized in that the column IV element includes carbon.
9. the nitride semiconductor structure as described in claim 4,5,6 or 7, which is characterized in that the second type admixture includes
Magnesium.
10. the nitride semiconductor structure as described in claim 1,2,4,5 or 7, which is characterized in that further include an AlGaN bases
First type carrier barrier layer of plinth, is configured between the first type doping semiconductor layer and the luminescent layer.
11. the nitride semiconductor structure as described in claim 2,5 or 7, which is characterized in that further include the bases an AlGaN
Second type carrier barrier layer is configured between the second type doping semiconductor layer and the luminescent layer.
12. the nitride semiconductor structure as described in claim 1,2,4,5,6 or 7, which is characterized in that relative to described second
Type doping semiconductor layer or the second type layer, the electric hole on the bases InGaN, which provides layer, has a relatively low hydrogen concentration.
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| DE102016123262A1 (en) * | 2016-12-01 | 2018-06-07 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor body and method for producing a semiconductor layer sequence |
| CN107591466A (en) * | 2017-08-17 | 2018-01-16 | 华灿光电（浙江）有限公司 | Epitaxial wafer of light emitting diode and preparation method thereof |
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| CN103972340B (en) | 2018-06-08 |
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| CN108550670A (en) | 2018-09-18 |
| CN108550670B (en) | 2020-10-27 |
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