CN108305922A - Nitride semiconductor structure and semiconductor light-emitting elements - Google Patents
Nitride semiconductor structure and semiconductor light-emitting elements Download PDFInfo
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- CN108305922A CN108305922A CN201810344250.5A CN201810344250A CN108305922A CN 108305922 A CN108305922 A CN 108305922A CN 201810344250 A CN201810344250 A CN 201810344250A CN 108305922 A CN108305922 A CN 108305922A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 118
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 44
- 230000004888 barrier function Effects 0.000 claims abstract description 79
- 229910052738 indium Inorganic materials 0.000 claims description 16
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 271
- 239000000463 material Substances 0.000 abstract description 37
- 230000006835 compression Effects 0.000 abstract description 11
- 238000007906 compression Methods 0.000 abstract description 11
- 239000011229 interlayer Substances 0.000 abstract description 11
- 239000013078 crystal Substances 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 description 15
- 230000005611 electricity Effects 0.000 description 12
- 229910002601 GaN Inorganic materials 0.000 description 11
- 239000000126 substance Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000000605 extraction Methods 0.000 description 6
- 238000010030 laminating Methods 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention is about a kind of nitride semiconductor structure and semiconductor light-emitting elements.The nitride semiconductor structure is mainly configured with a stress control layer in luminescent layer and p-type carrier barrier interlayer, and p-type carrier barrier layer is by AlxGa1‑xThe material that N is indicated constitutes (0<x<1), and stress control layer is by AlxInyGa1‑x‑yThe material that N is indicated constitutes (0<x<1、0<y<1、0<x+y<1), and luminescent layer has the well layer of multiple storehouses alternating with each other and the multiple quantum trap structure of barrier layer, and every two layers of barrier interlayer has a well layer.The semiconductor light-emitting elements cooperatively provide the n-type electrode and p-type electrode of electric energy including at least such as above-mentioned nitride semiconductor structure and two.The problem of stress control layer can not only improve p-type carrier barrier layer and luminescent layer crystal quality deteriorates caused by lattice mismatch as a result,；Meanwhile it can more lower well layer because of the compression stress suffered by materials variances.
Description
The present invention be proposed on 01 25th, 2013 application No. is 201310029711.7, it is entitled《Nitridation
Object semiconductor structure and semiconductor light-emitting elements》Application for a patent for invention divisional application.
Technical field
The present invention refers in particular to one kind in luminescent layer about a kind of nitride semiconductor structure and semiconductor light-emitting elements
It is configured with Al with p-type carrier barrier interlayerxInyGa1-x-yThe nitride semiconductor structure for the stress control layer that N materials are constituted
And semiconductor light-emitting elements, belong to technical field of semiconductors.
Background technology
In recent years, the application surface of light emitting diode is increasingly extensive, it has also become indispensable critical elements in daily life；
And light emitting diode is expected to replace lighting apparatus now, becomes the solid-state lighting elements of the following new generation, therefore develop Gao Jie
The light emitting diode of energy, high efficiency and higher power will be future trend；Nitride LED is due to, nothing small with component size
The advantages that mercury pollution, luminous efficiency height and long lifespan, it has also become one of most emerging photoelectric semiconductor material, and third main group nitrogenizes
The emission wavelength of object almost covers the range of visible light, more becomes the light LED material of great potential.
In general, iii-nitride light emitting devices are that a buffer layer is initially formed on substrate, on buffer layer sequentially
Epitaxy growth n-type semiconductor layer, luminescent layer and p-type semiconductor layer；Then, the p of part is removed using lithographic and etch process
Type semiconductor layer, part luminescent layer, until exposing the n-type semiconductor layer of part；Then, respectively at n-type semiconductor
N-type electrode and p-type electrode are formed on the expose portion and p-type semiconductor layer of layer, and produces light emitting diode；Wherein, it sends out
Photosphere is multiple quantum trap structure (MQW), and multiple quantum trap structure includes the quantum well layer being arranged alternately in a repetitive fashion
(well) and quantum barrier layer (barrier), because quantum well layer has the lower energy gap of relative quantum barrier layer so that upper
Electronics and electric hole can be limited on quantum mechanics by stating each quantum well layer in multiple quantum trap structure, cause electronics and electricity
Hole is injected from n-type semiconductor layer and p-type semiconductor layer respectively, and is combined in quantum well layer, and launches photon.
However, above-mentioned light emitting diode because factors (such as：Electric current congestion (current crowding), difference row
Defect (dislocation) etc.), and then influence its luminous efficiency；Theoretically, the luminous efficiency of light emitting diode depends on outside
Quantum efficiency internal quantum (internal quantum efficiency) with itself and light extraction efficiency
(light-extraction efficiency)；So-called internal quantum is determined by material property and quality, as
Light extraction efficiency is sent out inside element to the radiation proportion of surrounding air, and light extraction efficiency when radiation depending on leaving member
The loss occurred when inside part, one of the main reason for causing above-mentioned loss are the semiconductors of the superficial layer due to forming element
Material has high refractive index (refraction coefficient), and light is caused to generate total reflection (total in the material surface
Reflection) can not launch, and if light extraction efficiency promoted, the external quantum efficiency of semiconductor light-emitting elements is also
It is promoted therewith；Therefore, for internal quantum and light extraction efficiency is promoted, many technologies had been developed in recent years, such as
Use indium tin oxide (Indium Tin Oxide；ITO) when electric current transport layer, using flip chip structure (flip-chip), utilization
The graphically sapphire substrate of (PSS), and use current barrier layer (current block layer；CBL) etc.；Wherein, in
In the technology for promoting internal quantum, also there is dealer to be configured with one layer between multiple quantum trap structure and p-type semiconductor layer
The p-type carrier barrier layer (p-AlGaN) of high energy gap (band gap) so that more carriers are limited in quantum well layer, with
The laminating probability of electronics electricity hole is improved, luminous efficiency is increased, and then reaches the effect of light-emitting diode luminance is promoted.
And though carrier can be effectively limited in quantum well layer using p-AlGaN as the method for p-type carrier barrier layer,
To promote the internal quantum of light emitting diode；However, since multiple quantum trap structure is usually with the quantum well layer of InGaN
And the quantum barrier layer of GaN is formed, and substantially, the p-type carrier barrier layer of p-AlGaN and the quantum barrier layer tool of GaN
Have very high lattice misfit so that InGaN quantum well layers because lattice misfit can seriously be acted on by compression stress, and this
Kind of compression stress changes the band structure of each quantum well layer, to make electronics in quantum well layer and electric hole in space
On be separated from each other, cause the luminous efficiency of light emitting diode to reduce；Furthermore above-mentioned compression stress can also deteriorate adjacent GaN amounts
Interfacial characteristics between sub- barrier layer and InGaN quantum well layers also influence light emitting diode to lose carrier in interface
Luminous efficiency.
The missing still in actual implementation in view of above-mentioned existing nitride semiconductor LED with many places, because
This, develop a kind of novel nitride semiconductor structure and semiconductor light-emitting elements be still this field urgent problem to be solved it
One.
Invention content
In order to solve the above technical problems, the main object of the present invention is to provide a kind of nitride semiconductor structure, in hair
Photosphere is configured with Al with p-type carrier barrier interlayerxInyGa1-x-yThe stress control layer that N materials are constituted, to improve p-type carrier
The problem of barrier layer causes crystal quality to deteriorate with lattice mismatch caused by luminescent layer increases epitaxy yield, and further subtracts
Low quantum well layer is influenced by compression stress, and effectively electronics electricity hole is confined in each quantum well layer, is thus promoted
Internal quantum so that semiconductor light-emitting elements can get good luminous efficiency.
Another object of the present invention is to provide a kind of semiconductor light-emitting elements, and including at least has above-mentioned nitride partly to lead
Body structure.
In order to achieve the above object, the present invention provides a kind of nitride semiconductor structure, mainly in luminescent layer and a p-type carrier
It obstructs interlayer and is configured with a stress control layer, the luminescent layer has multiple quantum trap structure, and the multiple quantum trap structure
Include the well layer and barrier layer of multiple storehouses alternating with each other, and every two layers of barrier interlayer has a well layer, the p-type
Carrier barrier layer is by chemical formula AlxGa1-xThe material that N is indicated is constituted, wherein 0<x<1, and the stress control layer is
AlxInyGa1-x-yThe material that N is indicated is constituted, wherein x and y meets 0<x<1、0<y<1、0<x+y<1 numerical value.
Specific implementation mode according to the present invention, it is preferable that in above-mentioned nitride semiconductor structure, the stress control
Preparative layer is less than 10 doped with concentration19cm-3P-doping.
Specific implementation mode according to the present invention, it is preferable that in above-mentioned nitride semiconductor structure, the stress control
Preparative layer is less than 10 doped with concentration19cm-3N-shaped admixture.
Specific implementation mode according to the present invention, it is preferable that in above-mentioned nitride semiconductor structure, the stress control
The indium content of preparative layer is equal to or less than the indium content of the well layer of the multiple quantum trap structure.
Specific implementation mode according to the present invention, it is preferable that in above-mentioned nitride semiconductor structure, the stress control
The thickness of preparative layer is 2-15nm.
Specific implementation mode according to the present invention, it is preferable that in above-mentioned nitride semiconductor structure, the stress control
The thickness of preparative layer is less than the thickness of the well layer of the multiple quantum trap structure.
Specific implementation mode according to the present invention, it is preferable that in above-mentioned nitride semiconductor structure, the barrier layer
Doped with a concentration of 1016-1018cm-3N-shaped admixture.
The nitride semiconductor structure of the present invention is mainly configured with a stress control in luminescent layer and p-type carrier barrier interlayer
Preparative layer, luminescent layer has multiple quantum trap structure (MQW), and multiple quantum trap structure includes the well layer of multiple storehouses alternating with each other
And barrier layer, and every two layers of barrier interlayer has a well layer, wherein barrier layer can be doped with a concentration of 1016-1018cm-3N-shaped
Admixture so that barrier layer can reduce carrier shadowing effect, more increase carrier confinement effect, and p-type carrier barrier layer is by chemistry
Formula AlxGa1-xThe material that N is indicated is constituted, wherein 0<x<1, and stress control layer is by AlxInyGa1-x-yThe material institute that N is indicated
It constitutes, wherein x and y meets 0<x<1、0<y<1、0<x+y<1 numerical value；In addition, can further indium in proof stress control layer
Content makes the indium content of stress control layer be equal to or less than the indium content of the well layer of multiple quantum trap structure, and then forms energy gap
More than the stress control layer of well layer so that carrier can be confined in the well layer of multiple quantum trap structure, be covered with increasing electronics electricity hole
The probability of conjunction promotes internal quantum.
Furthermore above-mentioned stress control layer is less than 10 doped with concentration respectively19cm-3P-doping and concentration be less than
1019cm-3N-shaped admixture, and the thickness of stress control layer be 2-15nm, it is preferable that the thickness of stress control layer be less than weight
The thickness of the well layer of sub- well structure, by slim stress control layer, more avoidable cumulative stress and poor misarrangement position (misfit
Dislocation) the phenomenon that.
Specific implementation mode according to the present invention, it is preferable that above-mentioned nitride semiconductor structure can further include one
Substrate, a p-type semiconductor layer and a n-type semiconductor layer；Wherein, in being configured with the p-type half on the p-type carrier barrier layer
Conductor layer, and the n-type semiconductor layer is configured between the luminescent layer and the substrate.
Specific implementation mode according to the present invention, it is preferable that in above-mentioned nitride semiconductor structure, the p-type half
Conductor layer is more than 5 × 10 doped with concentration19cm-3P-doping, and its thickness be less than 30nm.
In one embodiment of this invention, can on p-type carrier barrier layer be configured with a p-type semiconductor layer, and in shine
A n-type semiconductor layer is configured between layer and substrate, wherein p-type semiconductor layer can be more than 5 × 10 doped with concentration19cm-3P-type
Admixture, and its thickness is less than 30nm.
Specific implementation mode according to the present invention, it is preferable that, can be in luminescent layer in above-mentioned nitride semiconductor structure
It is configured with N-shaped carrier barrier layer with n-type semiconductor interlayer, N-shaped carrier barrier layer is by chemical formula AlxGa1-xThe material institute that N is indicated
It constitutes, wherein 0<x<1.
Specific implementation mode according to the present invention, it is preferable that in above-mentioned nitride semiconductor structure, the luminescent layer
Multiple quantum trap structure can well layer and barrier layer be formed by InGaN and GaN respectively, there is opposite GaN by the well layer of InGaN
The lower energy gap of barrier layer so that electronics and electric hole are easier to be confined in well layer, to increase the laminating probability of electronics electricity hole.
Specific implementation mode according to the present invention, it is preferable that, can be in luminescent layer in above-mentioned nitride semiconductor structure
A superlattice layer is configured with N-shaped carrier barrier interlayer, the difference of luminescent layer and N-shaped carrier barrier layer is thus buffered, it is poor to reduce it
Arrange density.
The present invention also provides a kind of semiconductor light-emitting elements, and including at least has：
One substrate；
One n-type semiconductor layer, is disposed on the substrate；
One luminescent layer is configured in the n-type semiconductor layer, and the luminescent layer has multiple quantum trap structure, and institute
Well layer and barrier layer that multiple quantum trap structure includes multiple storehouses alternating with each other are stated, and every two layers of barrier interlayer has one
The well layer；
One stress control layer is configured on the luminescent layer, and the stress control layer is AlxInyGa1-x-yWhat N was indicated
Material is constituted, and wherein x and y meet 0<x<1、0<y<1、0<x+y<1 numerical value；
One p-type carrier barrier layer, is configured on the stress control layer, and the p-type carrier barrier layer is by chemical formula
AlxGa1-xThe material that N is indicated is constituted, wherein 0<x<1；
One p-type semiconductor layer is configured on the p-type carrier barrier layer；
One n-type electrode is configured at Ohmic contact in the n-type semiconductor layer；And
One p-type electrode, is configured at Ohmic contact in the p-type semiconductor layer.
The semiconductor light-emitting elements of the present invention are included at least such as above-mentioned nitride semiconductor structure and two cooperatively
The n-type electrode and p-type electrode of electric energy are provided；Al as a result,xInyGa1-x-yN stress control layers can not only improve p-type carrier barrier layer
The problem of crystal quality deteriorates caused by lattice mismatch with luminescent layer；Meanwhile it can more lower InGaN quantum well layers because material is poor
Different suffered compression stress so that in quantum well layer electronics and electric hole spatially more assemble, effectively by electronics electricity
Hole is confined in quantum well layer, thus promotes internal quantum.
In addition, because the reduction of compression stress can also enhance the interfacial characteristics between adjacent barrier layer and well layer, improve interface
The carrier at place is lost, and thus increases internal quantum so that semiconductor light-emitting elements can get good luminous efficiency.
Description of the drawings
Fig. 1 is the diagrammatic cross-section for the nitride semiconductor structure that a preferred embodiment of the present invention provides.
Fig. 2 is the semiconductor light emitting element made by the nitride semiconductor structure that is provided according to the preferred embodiment of the present invention
The diagrammatic cross-section of part.
Reference sign：
1 substrate, 2 buffer layer
3 n-type semiconductor layer, 31 n-type electrode
4 N-shaped carrier barrier layer, 5 luminescent layer
51 well layer, 52 barrier layer
6 stress control layer, 7 p-type carrier barrier layer
8 p-type semiconductor layer, 81 p-type electrode
9 superlattice layers
Specific implementation mode
The purpose of the present invention and its structure design functionally the advantages of, will be said according to the following drawings and preferred embodiment
It is bright, to have deeper into the present invention and specifically understand.
First, in the following description, it should be understood that when point out one layer (or film) or a structure configuration another
When "above" or "below" a substrate, another layer (or film) or another structure, can it is " direct " be located at other substrates, layer (or film) or
Another structure also or between the two there is more than one middle layer to be configured in a manner of " indirect ", it is each to can refer to description of the drawings
Layer position.
Show refering to Figure 1, it is the section for the nitride semiconductor structure that a preferred embodiment of the present invention provides
It is intended to, a stress control layer 6 is mainly configured between luminescent layer 5 and a p-type carrier barrier layer 7, luminescent layer 5 has weight
Sub- well structure (MQW), and multiple quantum trap structure includes the well layer 51 and barrier layer 52 of multiple storehouses alternating with each other, and every two layers
There is a well layer 51, p-type carrier barrier layer 7 is by chemical formula Al between barrier layer 52xGa1-xThe material that N is indicated is constituted, wherein 0<x
<1, and stress control layer 6 is by AlxInyGa1-x-yThe material that N is indicated is constituted, wherein x and y meets 0<x<1、0<y<1、0<x+y
<1 numerical value.
In addition, in above-mentioned nitride semiconductor structure, barrier layer 52 is doped with a concentration of 1016-1018cm-3N-shaped mix
Matter, and can be in being configured with a p-type semiconductor layer 8 on p-type carrier barrier layer 7, wherein p-type semiconductor layer 8 is more than 5 doped with concentration
×1019cm-3P-doping, and its thickness be less than 30nm, and between luminescent layer 5 and substrate 1 be configured with a n-type semiconductor layer 3；
Furthermore it in this present embodiment, also may be configured with N-shaped carrier barrier layer 4 between luminescent layer 5 and n-type semiconductor layer 3, the barrier of N-shaped carrier
Layer 4 is by chemical formula AlxGa1-xThe material that N is indicated is constituted, wherein 0<x<1；In addition, between luminescent layer 5 and N-shaped carrier barrier layer 4
A superlattice layer (super lattice structure) 9 is configured, to buffer the lattice of luminescent layer 5 and N-shaped carrier barrier layer 4
Difference reduces its difference row's density.
Furthermore in this present embodiment, stress control layer 6 is less than 10 doped with concentration respectively19cm-3P-doping (preferably
For magnesium) and concentration be less than 1019cm-3N-shaped admixture (preferably silicon), as a receptor, can increase has above-mentioned p-doping
Electric hole concentration is imitated, and N-shaped admixture is as a donor, donor is to improve the crystallization property of gallium nitride semiconductor layer, is passed through
N-shaped admixture is adulterated simultaneously with p-doping to generate good photoelectric characteristic, the thickness of above-mentioned stress control layer 6 is 2-15nm,
Preferably, the thickness of stress control layer 6 is the thickness of the well layer 51 less than multiple quantum trap structure.
The nitride semiconductor structure of above-described embodiment is in actual implementation in use, the material of n-type semiconductor layer 3 can be such as
For silicon doping gallium nitride series material, and the material of p-type semiconductor layer 8 may be, for example, magnesium doping gallium nitride series material,
The multiple quantum trap structure of luminescent layer 5 preferably can be respectively by InGaN and the GaN well layer 51 formed and barrier layer 52；And due to
AlxInyGa1-x-yN materials are formed by stress control layer 6 and are located between p-type carrier barrier layer 7 and luminescent layer 5, are answered by control
The content of indium in power control layer so that the indium content of stress control layer 6 is equal to or less than the well layer 51 of multiple quantum trap structure
Indium content, and then form the stress control layer 6 that energy gap is more than well layer so that carrier can be confined to the well layer of multiple quantum trap structure
In 51, to increase the laminating probability of electronics electricity hole, and then internal quantum is promoted, reaches effectively enhancing semiconductor light-emitting elements
The effect of luminous efficiency；In addition, the Al of the present inventionxInyGa1-x-yN stress control layers 6 can be used as p-type carrier barrier layer 7 with
Buffer layer 2 between luminescent layer 5, and the band gap of the InGaN due to typically containing indium is low compared with GaN, and the AlGaN containing aluminium
Band gap wants high compared with GaN；Therefore, stress control layer 6 through the invention can not only improve p-type carrier barrier layer 7 and luminescent layer 5
The problem of generated lattice mismatch causes crystal quality to deteriorate；Meanwhile it can more lower quantum well layer 51 by compression stress
Influence so that in quantum well layer 51 electronics and electric hole spatially more assemble, effectively electronics electricity hole is confined to often
In one quantum well layer 51, internal quantum is thus promoted；In addition, the reduction of compression stress also enhances adjacent GaN quantum
Interfacial characteristics between barrier layer 52 and InGaN quantum well layers 51 improve the carrier loss of interface, can also increase Internal Quantum
Efficiency.
It please refers to shown in Fig. 2, above-mentioned nitride semiconductor structure can be applied in semiconductor light-emitting elements, and Fig. 2 is root
The diagrammatic cross-section of the semiconductor light-emitting elements made by nitride semiconductor structure provided according to the preferred embodiment of the present invention,
The semiconductor light-emitting elements, which include at least, to be had：
One substrate 1；
One n-type semiconductor layer 3, is configured on substrate 1；Wherein, the material of n-type semiconductor layer 3 may be, for example, silicon doping
Gallium nitride series material；
One luminescent layer 5, is configured in n-type semiconductor layer 3, and luminescent layer 5 has multiple quantum trap structure, and multiple quantum
Well structure includes the well layer 51 and barrier layer 52 of multiple storehouses alternating with each other, and has a well layer 51 between every two layers of barrier layer 52；
Wherein, well layer 51 can be formed by InGaN and GaN respectively with barrier layer 52, and electronics and electric hole is thus made to be easier to be confined to trap
In layer 51, to increase the laminating probability of electronics electricity hole, internal quantum is promoted；
One stress control layer 6, is configured on luminescent layer 5, and stress control layer 6 is by AlxInyGa1-x-yThe material institute that N is indicated
It constitutes, wherein x and y meet 0<x<1、0<y<1、0<x+y<1 numerical value；In this present embodiment, stress control layer 6 respectively doped with
Concentration is less than 1019cm-3P-doping (preferably magnesium) and concentration be less than 1019cm-3N-shaped admixture (preferably silicon), and its
Thickness is 2-15nm, and its thickness is less than the thickness of well layer 51, and is answered since the aluminium ion of p-type carrier barrier layer 7 can diffuse into
In power control layer 6, the indium content of stress control layer 6 is caused to be equal to or less than the indium content of the well layer 51 of multiple quantum trap structure,
And then forming the stress control layer 6 that energy gap is more than well layer so that carrier can be confined in the well layer 51 of multiple quantum trap structure, with
Increase the laminating probability of electronics electricity hole, promotes internal quantum；
One p-type carrier barrier layer 7, is configured on stress control layer 6, and p-type carrier barrier layer 7 is by chemical formula AlxGa1-xN
The material of expression is constituted, wherein 0<x<1；
One p-type semiconductor layer 8 is configured on p-type carrier barrier layer 7；Wherein, the material of p-type semiconductor layer 8 can be such as
For the gallium nitride series material of magnesium doping；
One n-type electrode 31, is configured at Ohmic contact in n-type semiconductor layer 3；And
One p-type electrode 81, is configured at Ohmic contact in p-type semiconductor layer 8；Wherein, n-type electrode 31 and p-type electrode
81 cooperatively provide electric energy, and with llowing group of materials but can be not limited only to made by these materials：Titanium, aluminium, gold, chromium, nickel, platinum
And its alloy etc.；Its production method is and the simultaneously emphasis of non-present invention well known to persons skilled in the art, therefore, no
It is repeated here in the present invention again.
In addition, may be configured with N-shaped carrier barrier layer 4 between luminescent layer 5 and n-type semiconductor layer 3, and N-shaped carrier barrier layer 4 by
Chemical formula AlxGa1-xThe material that N is indicated is constituted, wherein 0<x<1, so that carrier can be confined in quantum well layer 51, to carry
The laminating probability of high electronics electricity hole increases luminous efficiency, and then the effect of reach semiconductor light-emitting elements luminance raising；Furthermore
A buffer layer 2 is configured between substrate 1 and n-type semiconductor layer 3, buffer layer 2 is by chemical formula AlxGa1-xThe material that N is indicated is constituted,
Wherein 0<x<1, to solve because between substrate 1 and n-type semiconductor layer 3 because caused by crystal lattice difference epitaxy difference arrange phenomenon.
As a result, by the above-mentioned nitride semiconductor structure with stress control layer 6 implementation explanation it is found that the present invention
Semiconductor light-emitting elements pass through AlxInyGa1-x-yN stress control layers 6 can not only improve p-type carrier barrier layer 7 and luminescent layer 5 because
The problem of crystal quality caused by lattice mismatch deteriorates, to increase the yield of epitaxy；Meanwhile it can more lower InGaN quantum well layers
51 because of the compression stress suffered by materials variances so that in quantum well layer 51 electronics and electric hole spatially more assemble, have
Electronics electricity hole is confined in quantum well layer 51 by effect ground, thus promotes internal quantum；In addition, because compression stress reduction also
The interfacial characteristics between adjacent barrier layer 52 and well layer 51 can be enhanced, improve the carrier loss of interface, thus increase internal amount
Sub- efficiency so that semiconductor light-emitting elements can get good luminous efficiency.
In conclusion the nitride semiconductor structure and semiconductor light-emitting elements of the tool stress control layer of the present invention, really
Desired use effect can be reached by above-mentioned disclosed embodiment.
Above-mentioned disclosed attached drawing and explanation, are merely a preferred embodiment of the present invention, not the protection to limit of the invention
Range；Persons skilled in the art, feature according to the present invention, the other equivalent change or modifications done all should be regarded as not
It is detached from protection scope of the present invention.
Claims (9)
1. a kind of nitride semiconductor structure, including：
One first type semiconductor layer；
There is one luminescent layer a multiple quantum trap structure, the multiple quantum trap structure to include multiple well layer of stacking alternating with each other
And multiple barrier layers；
One stress control layer, the wherein energy gap of the stress control layer are more than the energy gap of those well layer；
One carrier barrier layer, including the semi-conducting material of GaN base plinth and containing aluminium；And
One second type semiconductor layer, the wherein stress control layer are configured between the luminescent layer and the carrier barrier layer, the carrier
Barrier layer is configured between second type semiconductor layer and the stress control layer.
2. a kind of nitride semiconductor structure, including：
One first type semiconductor layer；
One luminescent layer, including a multiple quantum trap structure, the wherein multiple quantum trap structure include the multiple of stacking alternating with each other
Well layer and multiple barrier layers；
One superlattice layer is configured between the luminescent layer and first type semiconductor layer；
One second type semiconductor layer；
One carrier barrier layer including the semi-conducting material of GaN base plinth and containing aluminium, and is configured at the luminescent layer and the second type half
Between conductor layer；And
One stress control layer including the semi-conducting material of GaN base plinth and containing indium, and is configured at the luminescent layer and is obstructed with the carrier
Between layer, the indium concentration wherein in the stress control layer is equal to or less than the indium in those well layer in the multiple quantum trap structure
Concentration.
3. nitride semiconductor structure as claimed in claim 1 or 2, wherein the stress control layer is doped with N-shaped admixture and p
Type admixture.
4. nitride semiconductor structure as claimed in claim 1 or 2, wherein the stress control layer is less than doped with concentration
1019cm-3P-doping.
5. nitride semiconductor structure as claimed in claim 1 or 2, wherein the stress control layer is less than doped with concentration
1019cm-3N-shaped admixture.
6. nitride semiconductor structure as claimed in claim 1 or 2, wherein the indium content of the stress control layer is equal to or low
In the indium content of the well layer of the multiple quantum trap structure.
7. nitride semiconductor structure as claimed in claim 1 or 2, wherein the thickness of the stress control layer is 2-15nm.
8. nitride semiconductor structure as claimed in claim 1 or 2, wherein the thickness of the stress control layer is less than described more
The thickness of the well layer of weight quantum well structure.
9. nitride semiconductor structure as claimed in claim 1 or 2, wherein the barrier layer is doped with a concentration of 1016-
1018cm-3N-shaped admixture.
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| CN111180559A (en) * | 2018-11-12 | 2020-05-19 | 晶元光电股份有限公司 | Semiconductor device with a plurality of semiconductor chips |
| CN111987196A (en) * | 2019-05-24 | 2020-11-24 | 晶元光电股份有限公司 | Semiconductor device with a plurality of semiconductor chips |
| CN114964569A (en) * | 2022-05-19 | 2022-08-30 | 电子科技大学 | Quantum well bias and stress sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106057997B (en) * | 2016-06-28 | 2018-10-09 | 华灿光电(苏州）有限公司 | A kind of epitaxial wafer and preparation method of yellowish green light-emitting diode |
| CN109545918B (en) * | 2018-09-27 | 2020-11-27 | 华灿光电（浙江）有限公司 | Gallium nitride-based light emitting diode epitaxial wafer and preparation method thereof |
| CN109950375B (en) * | 2019-01-31 | 2021-04-02 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and growth method thereof |
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Also Published As
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| CN108305922B (en) | 2020-04-28 |
| CN108550669B (en) | 2020-10-09 |
| CN108565319B (en) | 2020-10-02 |
| CN108550669A (en) | 2018-09-18 |
| CN103972345B (en) | 2018-05-15 |
| CN108565319A (en) | 2018-09-21 |
| CN103972345A (en) | 2014-08-06 |
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