KR20090108505A - Group 3 nitride-based semiconductor light emitting diodes and methods to fabricate them - Google Patents

Abstract

PURPOSE: A group III nitride-based semiconductor light emitting diode is provided to improve a whole luminance property of an LED device by minimizing a light reflected to an inner part of a light emitting structure for the LED device. CONSTITUTION: A group III nitride-based semiconductor light emitting diode includes a growing substrate(10), a light emitting structure for an LED device, a super lattice structure(90), an ohmic contact current spreading layer(100), a p-type schottky contact electrode pad, and an n-type ohmic contact electrode pad. The light emitting structure includes a bottom nitride-based clad layer(20), a nitride-based active layer(30), and a top nitride-based clad layer(40). The bottom nitride-based clad layer is made of an n-type conductive semiconductor material including a buffer layer formed on a top surface of the growing substrate.

Description

Group 3 nitride-based semiconductor light emitting diodes and a method for manufacturing the same {group 3 nitride-based semiconductor light emitting diodes and methods to fabricate them}

The present invention provides a p-type In x Al y Ga 1-xy N (0≤x, 0≤y, x + y≤1) semiconductor upper surface of the light emitting diode-emitting light emitting structure of the light emitting structure, which is 50 Ω / □ or less Prior to growing and forming an ohmic contact current spreading layer composed of a group III-nitride-based conductive thin film structure having a sheet resistance of p-type In x Al y Ga 1-xy N ( 0≤x, 0≤y, x + y≤1) Inserting a superlattice structure between the semiconductor and the ohmic contact current spreading layer composed of a group III-nitride-based conductive thin film structure to inject current in the vertical direction In addition to facilitating current injection, a surface uneven process may be introduced on the upper surface of the ohmic contact current spreading layer to effectively improve the overall performance of the light emitting diode device, including driving voltage and external light emitting efficiency.

A light emitting diode (LED) device generates light by applying a current of a predetermined magnitude to convert current into light in an active layer in a solid light emitting structure. Early research and development of LED devices formed compound semiconductors such as indium phosphorus (InP), gallium arsenide (GaAs), and gallium phosphorus (GaP) with p-i-n junction structure. While the LED emits light in the visible light region longer than the wavelength of green light, the device that emits blue and ultraviolet light has also been commercialized in recent years thanks to the research and development of group III nitride semiconductor materials. It is widely used in devices, light source devices, and environmental applications, and furthermore, it is possible to combine red, green, and blue LED device chips, or to use a phosphor in a short wavelength pumping LED device. A white light source LED that emits white light by grafting has been developed, and its application range is widening as a lighting device. In particular, LED devices using solid single crystal semiconductors are highly efficient in converting electrical energy to light energy, have an average lifespan of more than 5 years, and can greatly reduce energy consumption and maintenance costs. It is attracting attention.

Since a light emitting diode (hereinafter, referred to as a group III nitride semiconductor light emitting diode) device made of such a group III nitride semiconductor material system is generally grown on top of an insulating growth substrate (typically, sapphire), another group 3 Since two electrodes facing each other of the growth substrate cannot be provided like the Group-5 compound semiconductor light emitting diode device, two electrodes of the LED device must be formed on the crystal-grown semiconductor material system. A conventional structure of such a group III nitride semiconductor light emitting diode device is schematically illustrated in FIGS. 5 and 7.

First, referring to FIG. 5, a group III-nitride semiconductor light emitting diode device includes a lower nitride-based cladding made of a sapphire growth substrate 10 and an n-type conductive semiconductor material sequentially grown on the top surface of the growth substrate 10. A layer 20, a nitride based active layer 30 and an upper nitride based cladding layer 40 made of a p-type conductive semiconductor material. The lower nitride-based cladding layer 20 may be formed of an n-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor multilayer, and the nitride based active layer 30 Is composed of a multi-quantum well-structured semiconductor in which Group III-nitride-based In x Al y Ga 1-xy N (0≤x, 0≤y, x + y≤1) Can be. In addition, the upper nitride-based cladding layer 40 may be formed of a p-type In x Al y Ga 1-x-y N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor multilayer. In general, the lower nitride-based cladding layer / nitride-based active layer / upper nitride-based cladding layer 20, 30, or 40 formed of the group III-nitride-based semiconductor single crystal is a device such as MOCVD, MBE, HVPE, sputter, or PLD. Can be grown using. At this time, prior to growing the n-type In x Al y Ga 1-xy N semiconductor, which is the lower nitride-based cladding layer 20, in order to improve lattice matching with the sapphire growth substrate 10, such as AlN or GaN The buffer layer 201 may be formed therebetween.

As described above, since the sapphire growth substrate 10 is an electrically insulating material, both electrodes of the LED element should be formed on the same upper surface of the single crystal semiconductor growth direction. For this purpose, the upper nitride-based cladding layer 40 and the nitride-based A portion of the active layer 30 is etched (ie, etched) to expose a portion of the upper nitride cladding layer 20 to the atmosphere, and the n-type In, the lower nitride-based cladding layer 20 exposed to the atmosphere, is exposed. An n-type ohmic contact interface electrode and an electrode pad 80 are formed on the x Al y Ga 1-xy N semiconductor upper surface.

In particular, since the upper nitride-based cladding layer 40 has a relatively high sheet resistance due to low carrier concentration and small mobility, prior to forming the p-type electrode 70, There is a need for an additional material capable of forming the ohmic contact current spreading layer 50. In contrast, US Pat. No. 5,563,422 discloses a p-type In x Al y Ga 1-xy N (40) semiconductor, which is an upper nitride-based cladding layer 40 positioned on an upper layer of a light emitting structure for a group III nitride semiconductor light emitting diode device. Before forming the p-type electrode 80 on the upper surface, nickel-gold oxidized to form an ohmic contact current spreading layer 50 forming an ohmic contact interface having a low specific contact resistance in the vertical direction. A material composed of (Ni-O-Au) has been proposed.

The ohmic contact current spreading layer 50 is positioned on the upper surface of the p-type In x Al y Ga 1-xy N semiconductor, which is the upper nitride-based cladding layer 40, while simultaneously improving current spreading in the horizontal direction. In addition, by forming an ohmic contact interface having a low specific contact resistance in the vertical direction, an effective current injection can be performed, thereby improving the electrical characteristics of the light emitting diode device. However, the ohmic contact current spreading layer 50 composed of oxidized nickel-gold has a low transmittance of 70% on average even after the heat treatment, and this low light transmittance is when the light emitted from the light emitting diode device is emitted to the outside. It absorbs large amounts of light, reducing the overall external luminous efficiency.

As described above, in order to obtain a high-brightness light emitting diode device through high light transmittance of the ohmic contact current spreading layer 50, various kinds of materials including the recently oxidized nickel-gold (Ni-O-Au) material Instead of the ohmic contact current spreading layer 50 formed of a transparent metal or alloy, a method of forming a transparent conductive material such as indium tin oxide (ITO) or zinc oxide (ZnO), which has a transmittance of 90% or more, has been proposed. However, the transparent conductive material is a p-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor, which is the upper nitride-based cladding layer 40 (~ 7.5 eV or more). Small work function (4.7 ~ 6.1eV), and direct deposition on top of p-type In x Al y Ga 1-xy N semiconductor and subsequent process including heat treatment, Shoki with large specific contact resistance instead of ohmic contact interface The formation of a schottky contact interface requires a new transparent conductive material or fabrication process that can solve the above problems.

The transparent conductive material such as ITO or ZnO is formed on the upper surface of the p-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor of the upper nitride-based cladding layer 40. In order to fulfill its role as a good ohmic contact current spreading layer 50, YK Su et al. Have recently described the transparent electroconductive material described above in various literatures as the p-type In x Al y as the upper nitride-based cladding layer 40. Prior to the direct deposition of Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductors, a current spreading layer having an ohmic contact interface via a superlattice structure 50) A formation technique was proposed.

As shown in FIG. 6, the superlattice structure includes two layers a1 and b1 of a well and b1 and a barrier a1 in a multi-quantum well structure. Although the points repeated periodically in one pair are similar, the barrier (a1) thickness of the multi-quantum well structure is relatively thicker than the thickness of the well (b1), while the two layers constituting the superlattice structure. (a2, b2) all have a thin thickness of 5 nm or less. Due to the above characteristics, the multi-quantum well structure is different from the role of confining electrons or holes, which are carriers, to the well b1 located between the thick barriers a1. It helps to facilitate transport.

Using the superlattice structure proposed by YK Su et al., A light emitting diode device having an ohmic contact current spreading layer 60 will be described with reference to FIG. 7. A group III nitride semiconductor light emitting diode device is a sapphire growth substrate ( 10) an upper nitride-based cladding layer formed of a lower nitride-based cladding layer 20 formed of an n-type conductive semiconductor material, an nitride-based active layer 30, and a p-type conductive semiconductor material formed on an upper surface of the growth substrate 10 ( 40), and superlattice structure 90. In particular, the superlattice structure 90 is in-situ with the same growth equipment as the lower nitride-based cladding layer 20, the nitride-based active layer 30, and the upper nitride-based cladding layer 40. To grow and form. The lower nitride-based cladding layer 20 may be formed of an n-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor multilayer, and the nitride based active layer 30 Is a group III-nitride based In x Al y Ga 1-xy N (0≤x, 0≤y, x + y≤1) semiconductor multilayer composed of different composition of multi-quantum well structure. have. The upper nitride cladding layer 40 may be formed of a p-type In x Al y Ga 1-x-y N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor multilayer. In addition, the superlattice structure 90 is a group III-nitride-based In x Al y Ga 1-xy N (0≤x, 0≤y, x + y≤1) semiconductor or other conductive plate composed of different compositions. A group III-nitride-based In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor layer having a dopant may be formed.

P-type In x Al y Ga 1-xy N (0 ≦ x, 0), which is the upper nitride-based cladding layer 40, according to the composition and dopant type of the superlattice structure 90 ≤y, x + y≤1) Lower the dopant activation energy of the semiconductor to increase the net effective hole concentration, or through quantum mechanical tunneling conduction through energy bandgap engineering It is known to form an ohmic contact interface through a mechanical tunneling transport phenomenon.

In general, the lower nitride-based cladding layer / nitride-based active layer / the upper nitride-based cladding layer / superlattice structure 20, 30, 40, or 90 formed of the group III-nitride semiconductor single crystal is MOCVD, MBE, HVPE, or sputter. Or a device such as a PLD. At this time, prior to growing the n-type In x Al y Ga 1-xy N semiconductor of the lower nitride-based cladding layer 20, in order to improve lattice matching with the sapphire growth substrate 10, such as AlN or GaN The buffer layer 201 may be formed therebetween.

In addition, the energy conversion efficiency (lm / W) of the packaged light emitting diode device may be increased by drawing out the light generated in the active layer in the light emitting structure for the group III nitride semiconductor light emitting diode device to the outside. In general, the external luminous efficiency of group III-nitride semiconductor light emitting diodes is surprisingly low. The reason for this is that a large amount of light generated in the LED structure is emitted to the outside due to a large refractive index difference between the group III-nitride semiconductor including GaN or the ohmic contact current spreading layer such as ITO or ZnO and the molding material. Instead, it is totally reflected and goes back to the inside of the LED and disappears. For example, assuming that the refractive index of gallium nitride (GaN) is about 2.3 and the refractive index of the molding material is about 1.5, the amount of light totally reflected at the joint surface of the two materials is about 90%. To solve this problem, the p-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y), which is the upper nitride-based cladding layer 40 of the light emitting structure for group III-nitride semiconductor light emitting diode devices, is solved. ≤ 1) By performing an etching process on the surface of the semiconductor or ohmic contact current spreading layer 60 to introduce a surface texture having a predetermined shape and dimensions on the surface. In this case, it was confirmed that the light extraction efficiency is significantly improved.

However, p-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1), which is the upper nitride-based cladding layer 40, is formed on the surface of the semiconductor or ohmic contact current spreading layer 60. The step of introducing the unevenness is a p-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor or ohmic contact current spreading layer, which is the upper nitride cladding layer 40. (60) There is a possibility that electrical damage to the surface may be caused to increase driving voltage and leakage current of the LED element, thereby deteriorating energy conversion efficiency.

The present invention relates to an upper surface of a p-type In x Al y Ga 1-xy N (0≤x, 0≤y, x + y≤1), which is an upper nitride-based cladding layer of a light emitting structure for a group III nitride semiconductor light emitting diode device. In order to recognize and solve the problems caused by the formation of the ohmic contact current spreading layer and the surface irregularities, p-type In x Al y Ga, an upper nitride-based cladding layer of the light emitting structure for group III nitride semiconductor light emitting diode devices 1-xy N (0≤x, 0≤y, x + y≤1) A group III-nitride-based conductive thin film structure having a superlattice structure and a sheet resistance of 50 Ω / □ or less is sequentially formed on the upper surface of the semiconductor. SUMMARY To provide a light emitting diode device having low driving voltage, low leakage current, and high external light emitting efficiency, and a method of manufacturing the same.

The present invention is a growth substrate; A lower nitride cladding layer made of an n-type conductive group III-nitride semiconductor on the upper surface of the growth substrate, a nitride active layer made of another group III-nitride-based semiconductor material, and a group III nitride-based semiconductor of p-type conductivity A light emitting structure for a light emitting diode device composed of an upper nitride cladding layer; A superlattice structure formed on an upper surface of the light emitting structure for the light emitting diode device; In the group III nitride semiconductor light emitting diode device comprising a; ohmic contact current spreading layer formed on the superlattice structure,

The superlattice structure is a multi-layer composed of group 2, 3, or 4 nitrides having different dopants and composition elements,

The ohmic contact current spreading layer proposes a group III nitride semiconductor light emitting diode device comprising a group III nitride-based conductive thin film structure having a sheet resistance of 50 Ω / □ or less.

The present invention is a growth substrate; A lower nitride cladding layer made of an n-type conductive group III-nitride semiconductor on the upper surface of the growth substrate, a nitride active layer made of another group III-nitride-based semiconductor material, and a group III nitride-based semiconductor of p-type conductivity A light emitting structure for a light emitting diode device composed of an upper nitride cladding layer; A superlattice structure formed on an upper surface of the light emitting structure for the light emitting diode device; In the group III nitride semiconductor light emitting diode device comprising a; ohmic contact current spreading layer formed on the superlattice structure,

The superlattice structure is a multi-layer composed of group 2, 3, or 4 nitrides having different dopants and composition elements,

The ohmic contact current spreading layer is composed of a group III nitride-based conductive thin film structure having a sheet resistance of 50 Ω / □ or less.

In order to improve the light extraction efficiency by changing the incident angle of the light generated by the light emitting diode device, another group of group 3, characterized in that the light extraction structure having a surface uneven process is introduced on the upper surface of the ohmic contact current spreading layer A nitride based semiconductor light emitting diode device is proposed.

The present invention provides a light emitting device using a group III nitride-based semiconductor represented by the formula In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) as a structural means for achieving the above object. In the method of manufacturing a diode (hereinafter, group 3 nitride-based semiconductor light emitting diode) device,

Preparing a growth substrate for growing a light emitting structure for a group III nitride semiconductor light emitting diode device;

A lower nitride cladding layer made of an n-type conductive group III nitride semiconductor material on the upper surface of the growth substrate, a nitride active layer made of a group III nitride semiconductor material composed of a different composition, and a group 3 p-conductive conductivity; Forming a light emitting structure for a group III nitride semiconductor light emitting diode device in which an upper nitride cladding layer made of a nitride semiconductor material is sequentially stacked and grown;

Forming a superlattice structure on an upper surface of a p-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor, which is an upper nitride-based cladding layer of the light emitting structure for the light emitting diode device ;

Forming an ohmic contact current spreading layer on an upper surface of the superlattice structure;

A portion of the ohmic contact current spreading layer, a superlattice structure, an upper nitride-based cladding layer, and a lower nitride-based cladding layer is removed, and the lower nitride-based cladding layer is exposed to the atmosphere, and then a portion of the lower nitride-based cladding layer is removed. Forming an n-type ohmic contact electrode and an electrode pad on the region; And

And forming a p-type schottky contact electrode and an electrode pad on an upper surface of a portion of the ohmic contact current spreading layer.

The present invention provides a group III nitride-based semiconductor represented by the chemical formula In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) as another means for achieving the above object. In the light emitting diode (hereinafter referred to as group III nitride semiconductor light emitting diode) device manufacturing method,

Preparing a growth substrate for growing a light emitting structure for a group III nitride semiconductor light emitting diode device;

A lower nitride cladding layer made of an n-type conductive group III nitride semiconductor material on the upper surface of the growth substrate, a nitride active layer made of a group III nitride semiconductor material composed of a different composition, and a group 3 p-conductive conductivity; Forming a light emitting structure for a group III nitride semiconductor light emitting diode device in which an upper nitride cladding layer made of a nitride semiconductor material is sequentially stacked and grown;

Forming a superlattice structure on an upper surface of a p-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor, which is an upper nitride-based cladding layer of the light emitting structure for the light emitting diode device ;

Forming an ohmic contact current spreading layer on an upper surface of the superlattice structure;

Forming a light extraction structure in which a surface irregularities process is introduced on an upper surface of the ohmic contact current spreading layer;

After removing the light extraction structure, the ohmic contact current spreading layer, the superlattice structure, the upper nitride-based cladding layer, and a portion of the lower nitride-based cladding layer, and exposing the lower nitride-based cladding layer to the atmosphere, the lower nitride Forming an n-type ohmic contact electrode and an electrode pad on a portion of the cladding layer; And

And forming a p-type schottky contact electrode and an electrode pad on an upper surface of a portion of the light extraction structure or the ohmic contact current spreading layer.

Instead of the superlattice structure composed of the multilayer, a superlattice structure of n-type conductive InGaN single layer or p-type conductive InGaN single layer having a thickness of 5 nm or less may be formed.

The ohmic contact current spreading layer is composed of a group III nitride-based conductive thin film structure having a sheet resistance of 50 Ω / □ or less.

The lower nitride-based cladding layer, the nitride-based active layer, the upper nitride-based cladding layer, the superlattice structure, and the ohmic contact current spreading layer are continuously in-situ using MOCVD, MBE, or HVPE equipment. To grow and form.

In addition, the lower nitride-based cladding layer, the nitride-based active layer, the upper nitride-based cladding layer, and the superlattice structure is continuously grown in-situ state using MOCVD, MBE, or HVPE equipment, and then The ohmic contact current spreading layer may be formed in an ex-situ state using MOCVD, MBE, HVPE, sputter, or PLD equipment.

As described above, the present invention is a p-type In x Al y Ga 1-xy N (0) which is an upper nitride cladding layer of a light emitting structure for a light emitting diode device in a Group III nitride semiconductor light emitting device (light emitting diode) device. ≤x, 0≤y, x + y≤1) Good electrical performance of the entire LED device by incorporating an ohmic contact current spreading layer composed of a group 3 nitride based conductive thin film structure having excellent superlattice structure and excellent electrical conductivity on the upper surface of the semiconductor In addition to the characteristics, there is an excellent effect of improving the brightness of the light emitting device having improved light transmittance characteristics.

In addition, in the group III nitride semiconductor light emitting diode device having the light extraction structure, surface irregularities are formed on the upper surface of the ohmic contact current spreading layer composed of the group III nitride conductive thin film structure having excellent electrical conductivity by wet or dry etching. Since it can be easily formed, there is an excellent effect of further improving the overall brightness characteristics of the LED device by minimizing the light totally reflected inside the light emitting structure structure for the LED device.

Hereinafter, with reference to the accompanying drawings, it will be described in more detail with respect to the Group III nitride semiconductor light emitting diode device manufactured according to the present invention.

1 is a cross-sectional view showing a first embodiment of a light emitting structure for a group III nitride semiconductor light emitting diode device invented by the present invention.

Referring to FIG. 1, a light emitting structure A for a light emitting diode device according to a first embodiment of the present invention, which is formed on a growth substrate 10, and has a buffer layer on an upper surface of the growth substrate 10. A lower nitride-based cladding layer 20 made of an n-type conductive semiconductor material, a nitride-based active layer 30, an upper nitride-based cladding layer 40 made of a p-type conductive semiconductor material, and a superlattice structure ( 90 and an ohmic contact current spreading layer 100.

The growth substrate 10 may be made of a material such as sapphire or silicon carbide (SiC).

The lower nitride-based cladding layer 20 formed of the n-type conductive semiconductor material may be formed of an In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor multilayer. The growth substrate 10 may include a buffer layer (not shown) formed on the top surface. The lower nitride cladding layer 20 may be formed by doping silicon (Si).

The nitride-based active layer 30 is a region where electrons and holes, which are carriers, are recombined and include InGaN, AlGaN, GaN, AlInGaN, and the like.

In addition, the nitride-based active layer 30 may be a multilayer film in which a quantum well layer and a barrier layer are repeatedly formed. The energy bandgap of the material constituting the barrier layer of the nitride based active layer 30 is larger than that of the material constituting the well layer, and the thickness of the barrier layer is greater than the thickness of the well layer. Thick is common. The barrier layer and the well layer may be a binary, ternary, or quaternary compound nitride-based semiconductor represented by the formula In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1). have. Furthermore, the barrier layer and the well layer may be formed by doping silicon (Si) or magnesium (Mg). The emission wavelength of light emitted from the light emitting diode device is determined according to the kind of material constituting the quantum well layer of the nitride based active layer 30.

The upper nitride-based cladding layer 40 formed of the p-type conductive semiconductor material may be formed of a p-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor multilayer. have. The upper nitride cladding layer 40 may be formed by doping zinc (Zn) or magnesium (Mg).

The superlattice structure 90 is positioned on the upper nitride-based cladding layer 40 made of the p-type conductive semiconductor material, and has a p-type p-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y≤1) Lower the dopant activation energy of the semiconductor to increase the effective hole concentration, or quantum-mechanical tunneling transport through energy band-gap engineering Can cause.

The superlattice structure 90 is generally formed in multiple layers, and the thickness of each layer constituting the superlattice structure is 5 nm or less, and each layer is formed of InN, InGaN, InAlN, AlGaN, GaN, AlInGaN, AlN, SiC, SiCN. , MgN, ZnN, or SiN. In one example, the superlattice structure 90 includes InGaN / GaN, AlGaN / GaN, InGaN / GaN / AlGaN, AlGaN / GaN / InGaN.

Furthermore, each layer of the superlattice structure 90 may be formed by doping silicon (Si), magnesium (Mg), zinc (Zn), or the like.

The superlattice structure 90 composed of an n-type conductive InGaN single layer or a p-type conductive InGaN single layer having a thickness of 5 nm or less may be substituted for the superlattice structure 90 having a multilayer structure. have.

The ohmic contact current spreading layer 100 is composed of a group III nitride-based conductive thin film structure having a sheet resistance of 50 Ω / □ or less. The group III-nitride-based conductive thin film structure of the ohmic contact current spreading layer 100 has a thickness of 6 nm or more represented by the formula In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1). It may be composed of a single layer or a multi-layer having a. Further, the ohmic contact current spreading layer 100 may be formed by doping silicon (Si), magnesium (Mg), zinc (Zn), or the like.

The light emitting structure A for the light emitting diode device is continuously formed in an in-situ state by using a device such as a MOCVD, MBE, HVPE, sputter, or PLD. Furthermore, the lower nitride-based cladding layer 20, the nitride-based active layer 30, the upper nitride-based cladding layer 40, and the superlattice structure 90 of the light emitting structure A for a light emitting diode device are continuously phosphorus. First, the growth state may be first formed in the situ state, and then the ohmic contact current spreading layer 100 may be formed on the upper surface of the superlattice structure 90 in the ex-situ state.

2 is a cross-sectional view showing a second embodiment of a light emitting structure for a group III nitride semiconductor light emitting diode device invented by the present invention.

Referring to FIG. 2, a light emitting structure (B) for a light emitting diode device according to a first embodiment of the present invention, which is formed on a growth substrate 10 and is formed on a top surface of the growth substrate 10. A lower nitride cladding layer 20 made of an n-type conductive semiconductor material, a nitride active layer 30, and an upper nitride cladding layer 40 made of a p-type conductive semiconductor material. And a superlattice structure 90 and an ohmic contact current spreading layer 100.

The growth substrate 10 may be made of a material such as sapphire or silicon carbide (SiC).

The lower nitride-based cladding layer 20 formed of the n-type conductive semiconductor material may be formed of an In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor multilayer. The growth substrate 10 may include a buffer layer (not shown) formed on the top surface. The lower nitride cladding layer 20 may be formed by doping silicon (Si).

The nitride-based active layer 30 is a region where electrons and holes, which are carriers, are recombined and include InGaN, AlGaN, GaN, AlInGaN, and the like.

In addition, the nitride-based active layer 30 may be a multilayer film in which a quantum well layer and a barrier layer are repeatedly formed. The energy bandgap of the material constituting the barrier layer of the nitride based active layer 30 is larger than that of the material constituting the well layer, and the thickness of the barrier layer is greater than the thickness of the well layer. Thick is common. The barrier layer and the well layer may be a binary, ternary, or quaternary compound nitride-based semiconductor represented by the formula In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1). have. Furthermore, the barrier layer and the well layer may be formed by doping silicon (Si) or magnesium (Mg). The emission wavelength of light emitted from the light emitting diode device is determined according to the kind of material constituting the quantum well layer of the nitride based active layer 30.

The upper nitride cladding layer 40 made of the p-type conductive semiconductor material may be formed of a p-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor multilayer. have. The upper nitride cladding layer 40 may be formed by doping zinc (Zn) or magnesium (Mg).

The superlattice structure 90 repeatedly stacked on the upper nitride cladding layer 40 is disposed on an upper surface of the upper nitride cladding layer 40 made of the p-type conductive semiconductor material. x Al y Ga 1-xy N (0≤x, 0≤y, x + y≤1) Lower the dopant activation energy of the semiconductor to increase the effective hole concentration, or band-gap engineering This can lead to quantum-mechanical tunneling transport.

The superlattice structure 90 is generally formed in multiple layers, and the thickness of each layer constituting the superlattice structure is 5 nm or less, and each layer is formed of InN, InGaN, InAlN, AlGaN, GaN, AlInGaN, AlN, SiC, SiCN. , MgN, ZnN, or SiN. In one example, the superlattice structure 90 includes InGaN / GaN, AlGaN / GaN, InGaN / GaN / AlGaN, AlGaN / GaN / InGaN.

Furthermore, each layer of the superlattice structure 90 may be formed by doping silicon (Si), magnesium (Mg), zinc (Zn), or the like.

The superlattice structure 90 composed of an n-type conductive InGaN single layer or a p-type conductive InGaN single layer having a thickness of 5 nm or less may be substituted for the superlattice structure 90 having a multilayer structure. have.

The ohmic contact current spreading layer 100 repeatedly stacked on the upper surface of the superlattice structure 90 is composed of a group III nitride-based conductive thin film structure having a sheet resistance of 50 Ω / □ or less. The group III-nitride-based conductive thin film structure of the ohmic contact current spreading layer 100 is 6 nm or more represented by the formula In x Al y Ga 1-xy N (0≤x, 0≤y, x + y≤1). It may be composed of a single layer or a multi-layer having a thickness. Further, the ohmic contact current spreading layer 100 may be formed by doping silicon (Si), magnesium (Mg), zinc (Zn), or the like.

The light emitting structure A for the light emitting diode device is continuously formed in an in-situ state by using a device such as a MOCVD, MBE, HVPE, sputter, or PLD. Furthermore, the lower nitride-based cladding layer 20, the nitride-based active layer 30, the upper nitride-based cladding layer 40, and the superlattice structure 90 of the light emitting structure A for a light emitting diode device are continuously phosphorus. First, in the in-situ state, the growth may be first formed, and then, in the ex-situ state, the ohmic contact current spreading layer 100 may be grown and formed on the upper surface of the superlattice structure 90.

3 is a cross-sectional view of a group III-nitride semiconductor light emitting diode device shown as a first embodiment manufactured by the present invention.

Referring to FIG. 3, a light emitting structure A for a light emitting diode device according to the first embodiment of the present invention is grown and formed on an upper surface of the growth substrate 10. In other words, the lower nitride-based cladding layer 20 made of an n-type conductive semiconductor material including a buffer layer (not shown) on the upper surface of the growth substrate 10, the nitride-based active layer 30, and an upper portion made of a p-type conductive semiconductor material The nitride cladding layer 40, the superlattice structure 90, the ohmic contact current spraying layer 100, the p-type schottky contact electrode and electrode pad 70, and the n-type ohmic contact electrode and electrode pad 80 are Include.

The growth substrate 10 may be made of a material such as sapphire or silicon carbide (SiC).

The lower nitride-based cladding layer 20 formed of the n-type conductive semiconductor material may be formed of an In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor multilayer. The growth substrate 10 may include a buffer layer (not shown) formed on the top surface. The lower nitride cladding layer 20 may be formed by doping silicon (Si).

The nitride-based active layer 30 is a region where electrons and holes, which are carriers, are recombined and include InGaN, AlGaN, GaN, AlInGaN, and the like.

In addition, the nitride-based active layer 30 may be a multilayer film in which a quantum well layer and a barrier layer are repeatedly formed. The energy bandgap of the material constituting the barrier layer of the nitride based active layer 30 is larger than that of the material constituting the well layer, and the thickness of the barrier layer is greater than the thickness of the well layer. Thick is common. The barrier layer and the well layer may be a binary, ternary, or quaternary compound nitride-based semiconductor represented by the formula In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1). have. Furthermore, the barrier layer and the well layer may be formed by doping silicon (Si) or magnesium (Mg). The emission wavelength of light emitted from the light emitting diode device is determined according to the kind of material constituting the quantum well layer of the nitride based active layer 30.

The upper nitride-based cladding layer 40 formed of the p-type conductive semiconductor material may be formed of a p-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor multilayer. have. The upper nitride cladding layer 40 may be formed by doping zinc (Zn) or magnesium (Mg).

The light emitting diode device has a structure in which the lower nitride based cladding layer 20, the nitride based active layer 30, and the upper nitride based cladding layer 40 are sequentially stacked. The nitride-based active layer 30 is formed on a portion of the lower nitride-based cladding layer 20 formed of the n-type conductive semiconductor material, and is formed of a p-type conductive semiconductor material on the nitride-based active layer 30. An upper nitride cladding layer 40 is formed. Therefore, a portion of the upper surface of the lower nitride based cladding layer 20 is bonded to the nitride based active layer 30, and the remaining portion of the upper surface of the lower nitride clad layer 20 is exposed to the outside.

The superlattice structure 90 is located on a part or the entire region of the upper nitride-based cladding layer 40, and is generally formed in multiple layers. The thickness of each layer constituting the superlattice structure 90 is 5 nm or less. May be composed of InN, InGaN, InAlN, AlGaN, GaN, AlInGaN, AlN, SiC, SiCN, MgN, ZnN, or SiN. For example, the superlattice structure 90 may include silicon (Si) doped InGaN / GaN, AlGaN / GaN, or the like.

Furthermore, each layer of the superlattice structure 90 may be formed by doping silicon (Si), magnesium (Mg), zinc (Zn), or the like.

Instead of the superlattice structure 90, the n-type conductive InGaN single layer or the p-type InGaN single layer may be formed instead of the superlattice structure 90.

The ohmic contact current spreading layer 100 is formed of a group III nitride-based conductive thin film structure having a sheet resistance of 50 Ω / □ or less on a part or the entire area of the superlattice structure 90, and the nitride-based The light emitted from the active layer 30 is transmitted to the outside. For example, MOCVD consists of group III nitride-based conductive materials such as silicon (Si) doped gallium nitride (GaN) and silicon (Si) doped aluminum gallium nitride (AlGaN) having a sheet resistance of 50 Ω / □ or less. , MBE, HVPE, sputter, or a single layer or multilayer thin film having a thickness of more than 6nm formed by using a device, such as PLD, the light emitted by uniformly dispersing the current input through the p-type schottky contact electrode and electrode pad 70 It plays a role of increasing efficiency.

The p-type schottky contact electrode and the electrode pad 70 are positioned on a portion of an upper surface of the ohmic contact current spreading layer 100, and a material for forming a schottky contact interface with the ohmic contact current spreading layer 100; For example, it is made of a metal such as Pd / Au and may be formed by a lift off method. Pd / Au may be used to not only improve adhesion to the ohmic contact current spreading layer 100, but also to obtain a preferred schottky contact interface of the ohmic contact current spreading layer 100.

The n-type ohmic contact electrode and the electrode pad 80 are formed on the exposed surface of the lower nitride-based cladding layer 20 made of an n-type conductive semiconductor material and may be formed using a lift-off method. The n-type ohmic contact electrode and the electrode pad 80 are made of a material for forming an ohmic contact interface with the lower nitride-based cladding layer 20, for example, a metal such as Cr / Al, and using Cr metal. In addition to improving adhesion, a desirable ohmic contact interface with the lower nitride-based cladding layer 20 can be obtained.

4 is a cross-sectional view of a group III-nitride semiconductor light emitting diode device shown as a second embodiment produced by the present invention.

Referring to FIG. 4, the light emitting structure A for the light emitting diode device according to the first exemplary embodiment of the present invention is grown and formed on an upper surface of the growth substrate 10. In other words, the lower nitride-based cladding layer 20 made of an n-type conductive semiconductor material including a buffer layer (not shown) on the upper surface of the growth substrate 10, the nitride-based active layer 30, and an upper portion made of a p-type conductive semiconductor material The nitride cladding layer 40, the superlattice structure 90, the ohmic contact current spreading layer 100, the light extraction structure 110, the p-type schottky contact electrode and electrode pad 70 and the n-type ohmic contact electrode and An electrode pad 80 is included.

The growth substrate 10 may be made of a material such as sapphire or silicon carbide (SiC).

The lower nitride-based cladding layer 20 formed of the n-type conductive semiconductor material may be formed of an In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor multilayer. The growth substrate 10 may include a buffer layer (not shown) formed on the top surface. The lower nitride cladding layer 20 may be formed by doping silicon (Si).

The nitride-based active layer 30 is a region where electrons and holes, which are carriers, are recombined and include InGaN, AlGaN, GaN, AlInGaN, and the like.

In addition, the nitride based active layer 30 may be a multilayer film in which a quantum well layer and a barrier layer are repeatedly formed. The energy bandgap of the material constituting the barrier layer of the nitride based active layer 30 is larger than that of the material constituting the well layer, and the thickness of the barrier layer is greater than the thickness of the well layer. Thick is common. The barrier layer and the well layer may be a binary, ternary, or quaternary compound nitride-based semiconductor represented by the formula In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1). have. Furthermore, the barrier layer and the well layer may be formed by doping silicon (Si) or magnesium (Mg). The emission wavelength of light emitted from the light emitting diode device is determined according to the kind of material constituting the quantum well layer of the nitride based active layer 30.

The upper nitride cladding layer 40 made of the p-type conductive semiconductor material may be formed of a p-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor multilayer. have. The upper nitride cladding layer 40 may be formed by doping zinc (Zn) or magnesium (Mg).

The light emitting diode device has a structure in which the lower nitride based cladding layer 20, the nitride based active layer 30, and the upper nitride based cladding layer 40 are sequentially stacked. The nitride-based active layer 30 is formed on a portion of the lower nitride-based cladding layer 20 formed of the n-type conductive semiconductor material, and is formed of a p-type conductive semiconductor material on the nitride-based active layer 30. An upper nitride cladding layer 40 is formed. Therefore, a portion of the upper surface of the lower nitride based cladding layer 20 is bonded to the nitride based active layer 30, and the remaining portion of the upper surface of the lower nitride clad layer 20 is exposed to the outside.

The superlattice structure 90 is located on a part or the entire region of the upper nitride-based cladding layer 40, and is generally formed in multiple layers. The thickness of each layer constituting the superlattice structure 90 is 5 nm or less. May be composed of InN, InGaN, InAlN, AlGaN, GaN, AlInGaN, AlN, SiC, SiCN, MgN, ZnN, or SiN. For example, the superlattice structure 90 may include silicon (Si) doped InGaN / GaN, AlGaN / GaN, or the like.

Furthermore, each layer of the superlattice structure 90 may be formed by doping silicon (Si), magnesium (Mg), zinc (Zn), or the like.

Instead of the superlattice structure 90, the n-type conductive InGaN single layer or the p-type InGaN single layer may be formed instead of the superlattice structure 90.

The ohmic contact current spreading layer 100 is formed of a group III nitride-based conductive thin film structure having a sheet resistance of 50 Ω / □ or less on a part or entire region of the superlattice structure 90, and the nitride-based active layer The light emitted from 30 is transmitted to the outside. For example, MOCVD consists of group III nitride-based conductive materials such as silicon (Si) doped gallium nitride (GaN) and silicon (Si) doped aluminum gallium nitride (AlGaN) having a sheet resistance of 50 Ω / □ or less. , MBE, HVPE, sputter, or a single layer or multilayer thin film having a thickness of more than 6nm formed by using a device, such as PLD, the light emitted by uniformly dispersing the current input through the p-type schottky contact electrode and electrode pad 70 It plays a role of increasing efficiency.

The light extraction structure 110 is a surface texture introduced on the upper surface of the ohmic contact current spreading layer 100 in order to emit as much of the light generated from the nitride-based active layer 30 as possible into the atmosphere. The light extraction structure 110 forms an unevenness having a predetermined shape and dimension on the surface of the ohmic contact current spreading layer 100 in contact with the atmosphere by using wet or dry etching to form an internal light emitting structure for a light emitting diode device. By minimizing total reflection of light, the overall brightness characteristics of LED devices can be further improved.

The p-type schottky contact electrode and the electrode pad 70 are positioned on a portion of the upper surface of the light extraction structure 110 or the ohmic contact current spreading layer 100, and the schottky contact with the ohmic contact current spreading layer 100. It is made of a material for forming an interface, for example a metal such as Pd / Au, and can be formed by a lift off method. Pd / Au may be used to not only improve adhesion to the ohmic contact current spreading layer 100, but also to obtain a preferred schottky contact interface of the ohmic contact current spreading layer 100.

The n-type ohmic contact electrode and the electrode pad 80 are formed on the exposed surface of the lower nitride-based cladding layer 20 made of an n-type conductive semiconductor material and may be formed using a lift-off method. The n-type ohmic contact electrode and the electrode pad 80 are made of a material for forming an ohmic contact interface with the lower nitride-based cladding layer 20, for example, a metal such as Cr / Al, and using Cr metal. In addition to improving adhesion, a desirable ohmic contact interface with the lower nitride-based cladding layer 20 can be obtained.

Although the preferred embodiments of the present invention have been described in detail above, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Accordingly, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concept of the present invention as defined in the following claims also fall within the scope of the present invention.

1 is a cross-sectional view showing a first embodiment of a light emitting structure for a group III nitride semiconductor light emitting diode device invented by the present invention,

2 is a cross-sectional view showing a second embodiment of a light emitting structure for a group III nitride semiconductor light emitting diode device invented by the present invention;

3 is a cross-sectional view showing a first embodiment of a group III nitride semiconductor light emitting diode device manufactured according to the present invention;

4 is a cross-sectional view showing a second embodiment of a group III nitride semiconductor light emitting diode device manufactured according to the present invention;

5 is a cross-sectional view showing a typical example of a group III-nitride semiconductor light emitting diode device according to the related art;

6 is a cross-sectional view for comparing and comparing a multi-quantum well structure and a superlattice structure,

7 is a cross-sectional view showing a representative example of a conventional Group 3 nitride-based semiconductor light emitting diode device.

Claims (31)

A growth substrate; A light emitting structure for a light emitting diode device comprising a lower nitride-based cladding layer made of an n-type conductive semiconductor material including a buffer layer formed on an upper surface of the growth substrate, a nitride-based active layer, and an upper nitride-based cladding layer made of a p-type conductive semiconductor material; ; A superlattice structure formed on a portion or the entire area of the upper nitride-based cladding layer of the light emitting structure for the light emitting diode device; An ohmic contact current spreading layer formed on a portion or an entire area of the upper lattice structure; A p-type schottky contact electrode and an electrode pad formed on a portion of an upper surface of the ohmic contact current spreading layer; And A group III nitride semiconductor light emitting diode device comprising: an n-type ohmic contact electrode and an electrode pad formed on a portion of an upper surface of a lower nitride-based clad layer of the light emitting structure for the light emitting diode device. The method of claim 1, The superlattice structure is a group III-nitride semiconductor light emitting diode device, characterized in that two or three layers are a multi-layered film that is periodically repeated in one pair. The method of claim 2, Each layer constituting the superlattice structure is a group III nitride semiconductor characterized in that it is InN, InGaN, InAlN, AlGaN, GaN, AlInGaN, AlN, SiC, SiCN, MgN, ZnN, or SiN material. Light emitting diode device. The method of claim 3, Each group of the superlattice structure is a group III nitride semiconductor light emitting diode device, characterized in that the material doped with silicon (Si), magnesium (Mg), or zinc (Zn). The method of claim 1, The superlattice structure is a group III nitride semiconductor light emitting diode device, which can be replaced with an InGaN single layer of n type conductivity or InGaN single layer of p type conductivity having a thickness of 5 nm or less. The method of claim 1, The group ohmic contact spreading layer is a group III nitride semiconductor light emitting diode device, characterized in that formed of a group III nitride-based conductive thin film structure having a sheet resistance of 50 Ω / □ or less. The method of claim 6, The group III nitride-based conductive thin film structure constituting the ohmic contact current spreading layer has a thickness of 6 nm or more represented by the formula In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1). A group III nitride semiconductor light emitting diode device characterized in that it is a single layer or multilayer film of a nitride having a film. A growth substrate; A light emitting structure for a light emitting diode device comprising a lower nitride-based cladding layer made of an n-type conductive semiconductor material including a buffer layer formed on an upper surface of the growth substrate, a nitride-based active layer, and an upper nitride-based cladding layer made of a p-type conductive semiconductor material; ; A superlattice structure formed on a portion or the entire area of the upper nitride-based cladding layer of the light emitting structure for the light emitting diode device; An ohmic contact current spreading layer formed on a portion or an entire area of the upper lattice structure; A light extraction structure in which surface irregularities are introduced into an upper surface of the ohmic contact current spreading layer; A p-type schottky contact electrode and an electrode pad formed on a portion of the upper surface of the light extraction structure or the ohmic contact current spreading layer; And A group III nitride semiconductor light emitting diode device comprising: an n-type ohmic contact electrode and an electrode pad formed on a portion of an upper surface of a lower nitride-based clad layer of the light emitting structure for the light emitting diode device. The method of claim 8, The superlattice structure is a group III-nitride semiconductor light emitting diode device, characterized in that two or three layers are a multi-layered film that is periodically repeated in one pair. The method of claim 9, Each layer constituting the superlattice structure is a group III nitride semiconductor characterized in that it is InN, InGaN, InAlN, AlGaN, GaN, AlInGaN, AlN, SiC, SiCN, MgN, ZnN, or SiN material. Light emitting diode device. The method of claim 10, Each group of the superlattice structure is a group III nitride semiconductor light emitting diode device, characterized in that the material doped with silicon (Si), magnesium (Mg), or zinc (Zn). The method of claim 8, The superlattice structure is a group III nitride semiconductor light emitting diode device which can be replaced with an n type conductive InGaN single layer or a p type conductive InGaN single layer having a thickness of 5 nm or less. . The method of claim 8, The group ohmic contact spreading layer is a group III nitride semiconductor light emitting diode device, characterized in that formed of a group III nitride-based conductive thin film structure having a sheet resistance of 50 Ω / □ or less. The method of claim 13, The group III nitride-based conductive thin film structure constituting the ohmic contact current spreading layer has a thickness of 6 nm or more represented by the formula In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1). A group III-nitride semiconductor light emitting diode device characterized in that it is a single layer or multilayer film of a nitride. The method of claim 8, The light extraction structure is a group III nitride semiconductor light emitting diode device, characterized in that the irregularities (texture) having a predetermined shape and dimensions are formed on the surface of the ohmic contact current spreading layer. Preparing a growth substrate for growing a light emitting structure for a group III nitride semiconductor light emitting diode device; A lower nitride cladding layer made of an n-type conductive group III nitride semiconductor material on the upper surface of the growth substrate, a nitride active layer made of a group III nitride semiconductor material composed of a different composition, and a group 3 p-conductive conductivity; Forming a light emitting structure for a group III nitride semiconductor light emitting diode device in which an upper nitride cladding layer made of a nitride semiconductor material is sequentially stacked and grown; Forming a superlattice structure on an upper surface of a p-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor, which is an upper nitride-based cladding layer of the light emitting structure for the light emitting diode device ; Forming an ohmic contact current spreading layer on an upper surface of the superlattice structure; A portion of the ohmic contact current spreading layer, the superlattice structure, the upper nitride-based cladding layer, and the lower nitride-based cladding layer is removed, and the lower nitride-based cladding layer is exposed to the air, and then the upper surface of the lower nitride-based cladding layer Forming an n-type ohmic contact electrode and an electrode pad in a portion of the region; And And forming a p-type schottky contact electrode and an electrode pad on a portion of the top surface of the ohmic contact current spreading layer. Preparing a growth substrate for growing a light emitting structure for a group III nitride semiconductor light emitting diode device; A lower nitride cladding layer made of an n-type conductive group III nitride semiconductor material on the upper surface of the growth substrate, a nitride active layer made of a group III nitride semiconductor material composed of a different composition, and a group 3 p-conductive conductivity; Forming a light emitting structure for a group III nitride semiconductor light emitting diode device in which an upper nitride cladding layer made of a nitride semiconductor material is sequentially stacked and grown; Forming a superlattice structure on an upper surface of a p-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) semiconductor, which is an upper nitride-based cladding layer of the light emitting structure for the light emitting diode device ; Removing a portion of the superlattice structure, the upper nitride-based cladding layer, and the lower nitride-based cladding layer, and exposing the lower nitride-based cladding layer to the atmosphere; Forming an ohmic contact current spreading layer on an upper surface of the superlattice structure; Forming an n-type ohmic contact electrode and an electrode pad on a portion of an upper surface of the lower nitride-based cladding layer; And And forming a p-type schottky contact electrode and an electrode pad on a portion of the top surface of the ohmic contact current spreading layer. The method of claim 16, And forming a light extraction structure by introducing surface irregularities on the upper surface of the ohmic contact current spreading layer. The method of claim 17, And forming a light extraction structure by introducing surface irregularities on an upper surface of the ohmic contact current spreading layer. The method of claim 16, The lower nitride-based cladding layer, the nitride-based active layer, the upper nitride-based cladding layer, the superlattice structure, and the ohmic contact current spreading layer are formed in-situ using MOCVD, MBE, or HVPE equipment. A group 3 nitride-based semiconductor light emitting diode device manufacturing method characterized by the above-mentioned. The method of claim 17, The lower nitride-based cladding layer, the nitride-based active layer, the upper nitride-based cladding layer, and the superlattice structure are formed in-situ state using MOCVD, MBE, or HVPE equipment, and the ohmic contact current soup is formed. The method of manufacturing a group III nitride semiconductor light emitting diode device, characterized in that the reading layer is formed in an ex-situ state using MOCVD, MBE, sputter, PLD, or HVPE equipment. A growth substrate; A lower nitride cladding layer made of an n-type conductive group III-nitride semiconductor on the upper surface of the growth substrate, a nitride active layer made of another group III-nitride-based semiconductor material, and a group III nitride-based semiconductor of p-type conductivity A light emitting structure for a light emitting diode device composed of an upper nitride cladding layer; A superlattice structure formed on an upper surface of the light emitting structure for the light emitting diode device; A thin film structure for a group III nitride semiconductor light emitting diode device comprising a; ohmic contact current spreading layer formed on an upper surface of the superlattice structure. The method of claim 22, A thin film structure for a group III nitride semiconductor light emitting diode device having a multi-layer film formed by alternating superlattice structure and an ohmic contact current spreading layer on an upper surface of the light emitting structure for a light emitting diode device. The method of claim 22, The superlattice structure is a thin film structure for a group III-nitride semiconductor light emitting diode device, characterized in that two or three layers form a pair of periodically repeated multi-layer films. The method of claim 24, Each layer constituting the superlattice structure is a group III nitride semiconductor characterized in that it is InN, InGaN, InAlN, AlGaN, GaN, AlInGaN, AlN, SiC, SiCN, MgN, ZnN, or SiN material. Thin film structure for light emitting diode device. The method of claim 25, Each layer constituting the superlattice structure is a thin film structure for a group III nitride semiconductor light emitting diode device, characterized in that the material doped with silicon (Si), magnesium (Mg), or zinc (Zn). The method of claim 22, The superlattice structure is a group III nitride semiconductor light emitting diode device, which can be replaced with an InGaN single layer of n type conductivity or InGaN single layer of p type conductivity having a thickness of 5 nm or less. The method of claim 22, The ohmic contact current spreading layer is a thin film structure for a group III nitride semiconductor light emitting diode device, characterized in that formed of a group III nitride-based conductive thin film structure having a sheet resistance of 50 Ω / □ or less. The method of claim 28, The group III nitride-based conductive thin film structure constituting the ohmic contact current spreading layer has a thickness of 6 nm or more represented by the formula In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1). A thin film structure for a group III nitride-based semiconductor light emitting diode device, characterized in that it is a single layer or a multilayer film of a nitride. The method of claim 22, The light emitting diode structure, the superlattice structure, and the ohmic contact current spreading layer for the light emitting diode device are group III nitride semiconductors that are continuously formed in-situ using MOCVD, MBE, or HVPE growth equipment. Thin film structure for light emitting diode device. The method of claim 22, The light emitting diode structure and the superlattice structure for the light emitting diode device are continuously formed in-situ using MOCVD, MBE, or HVPE growth equipment, and the ohmic contact current spreading layer is formed of the superlattice structure. A thin film structure for a group III-nitride semiconductor light emitting diode device formed in an ex-situ state using MOCVD, MBE, HVPE, sputter, or PLD growth equipment on an upper surface thereof.

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