CN102185053A - Light-emitting diode and manufacturing method thereof - Google Patents
Light-emitting diode and manufacturing method thereof Download PDFInfo
- Publication number
- CN102185053A CN102185053A CN2011100842010A CN201110084201A CN102185053A CN 102185053 A CN102185053 A CN 102185053A CN 2011100842010 A CN2011100842010 A CN 2011100842010A CN 201110084201 A CN201110084201 A CN 201110084201A CN 102185053 A CN102185053 A CN 102185053A
- Authority
- CN
- China
- Prior art keywords
- layer
- type semiconductor
- semiconductor layer
- light
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a light-emitting diode and a manufacturing method thereof. The light-emitting diode comprises a substrate, an n type semiconductor layer, an active layer, a p type semiconductor layer, an insertion layer and a current diffusion layer, wherein the n type semiconductor layer, the active layer, the p type semiconductor layer, the insertion layer and the current diffusion layer are sequentially positioned on the substrate; the insertion layer comprises at least one layer of superlattice structure; the superlattice structure consists of an Inx1Aly1Ga1-x1-y1N layer and an Inx2Aly2Ga1-x2-y2N layer; and the In content of the Inx2Aly2Ga1-x2-y2N layer is less than the In content of the Inx1Aly1Ga1-x1-y1N layer. Because the superlattice structure has a certain buffering effect on carrier mobility and a carrier can be effectively tunneled, current is re-distributed in the contact face between a current diffusion layer and the insertion layer, and in the insertion layer and then the current is prevented from being congested. Because the insertion layer has a certain tunneling effect, a forward voltage is not obviously increased. At the same time, because the insertion layer plays a role of buffering on the current between the p type semiconductor layer and the current diffusion layer, the electro-static discharge (ESD) performance of the device is increased.
Description
Technical field
The present invention relates to the semiconductor light emitting field, particularly relate to a kind of light-emitting diode and manufacture method thereof.
Background technology
Light-emitting diode (LED, Light Emitting Diode) is applied to various fields owing to have long, advantage such as power consumption is low of life-span, especially day by day significantly improves along with its illumination performance index, and LED is commonly used for light-emitting device at lighting field.Wherein, be the III-V compound semiconductor of representative with gallium nitride (GaN) because have that band gap is wide, luminous efficiency is high, characteristics such as electronics saturation drift velocity height, chemical property are stable, in field of optoelectronic devices such as high brightness blue light-emitting diode, blue lasers huge application potential is arranged, caused people's extensive concern.At present, general LED structure has adopted at p type semiconductor layer (normally p type nitride such as p type gallium nitride) direct growth current-diffusion layer (Spreading layer) afterwards, for example indium gallium nitride layer (InGaN layer) or indium tin oxide layer (ITO layer), traditional gallium nitride based LED can be because the distribution of the low current in the p type semiconductor layer meet with inhomogeneous light radiation.General, this shortcoming can be overcome by the interdigitated electrode arrays of translucent contact layer or device transverse current.
Yet, in traditional LED structural design, because the high relatively resistance of p type nitride itself caused the dispersion of its electric current to have jam, electric current mainly concentrate on can not be effectively luminous p type electrode under, thereby caused the decline of luminous inhomogeneous and luminous efficiency.The solution of current main proposition is the current-diffusion layer (as ITO or Ni/Au) of deposit transparent on p type nitride for this reason, so that electric current is diffused into the light-emitting zone outside the electrode as much as possible; Perhaps, the direct gallium nitride of growing n-type on p section bar material form the structure of tunnel junction with the high conductivity of utilizing the n type, but this is not obtained desirable effect.
The CN101694858A patent has proposed a kind of LED epitaxial structure and manufacture method thereof, and this structure is inserted by plain Al in the middle of luminescent layer and p type nitride layer
xIn
yGa
1-x-yN layer and p type Al
xIn
yGa
1-x-yThe insert layer that the n layer alternately constitutes has played protective effect for the ESD barrier propterty of material, and do not reduced other performances of material, but obvious effects is not played in its even diffusion for electric current.
The CN101183642A patent has proposed a kind of preparation method of p-GaN low resistance ohmic contact, this method is used the top layer of p-InGaN/p-AlGaN superlattice layer as p-GaN, with the reduction contact resistance, but this method does not play desirable effect for the even diffusion of electric current yet.
Summary of the invention
The invention provides a kind of light-emitting diode and manufacture method thereof,, but do not reduce other performance of material when improving luminous efficiency, and can increase the ESD barrier propterty of device to realize effective dispersion of electric current.
For solving the problems of the technologies described above, the invention provides a kind of light-emitting diode, comprising: substrate; Be positioned at n type semiconductor layer, active layer, p type semiconductor layer, insert layer and current-diffusion layer on the substrate successively; Described insert layer comprises one deck superlattice structure at least, and described superlattice structure is by In
X1Al
Y1Ga
1-x1-y1N layer and In
X2Al
Y2Ga
1-x2-y2The N layer is formed, described In
X2Al
Y2Ga
1-x2-y2The In content of N layer is less than In
X1Al
Y1Ga
1-x1-y1The In content of N layer.
Optionally, in described light-emitting diode, 0.01＜x1＜0.3,0≤y1＜0.2,0≤x2＜0.1,0≤y2＜0.2; Described insert layer comprises 2～40 layers of superlattice structure.
Optionally, in described light-emitting diode, described In
X1Al
Y1Ga
1-x1-y1The N layer is near described p type semiconductor layer, described In
X2Al
Y2Ga
1-x2-y2The N layer is near described current-diffusion layer.
Optionally, in described light-emitting diode, described In
X1Al
Y1Ga
1-x1-y1The N layer is near described current-diffusion layer, described In
X2Al
Y2Ga
1-x2-y2The N layer is near described p type semiconductor layer.
Optionally, in described light-emitting diode, the thickness of described insert layer is between 5nm to 200nm.
Optionally, in described light-emitting diode, also comprise the resilient coating and the non-doped nitride layer that are formed at successively between described substrate and the n type semiconductor layer.
Optionally, in described light-emitting diode, also comprise: the degree of depth extends to the opening of described n type semiconductor layer; Be formed at the n type electrode in the described opening, described n type semiconductor layer is electrically connected with a power cathode by described n type electrode; Be formed at the p type electrode on the described current-diffusion layer, described p type semiconductor layer is electrically connected with a positive source by described p type electrode.
Optionally, in described light-emitting diode, also comprise: be formed at described substrate away from the lip-deep n type of described n type semiconductor layer electrode, described n type semiconductor layer is electrically connected with a power cathode by described n type electrode; Be formed at the p type electrode on the described current-diffusion layer, described p type semiconductor layer is electrically connected with a positive source by described p type electrode.
Accordingly, the present invention also provides a kind of manufacturing method for LED, comprising: a substrate is provided; Form n type semiconductor layer, active layer, p type semiconductor layer, insert layer and current-diffusion layer on described substrate successively, wherein, described insert layer comprises one deck superlattice structure at least, and described superlattice structure is by In
X1Al
Y1Ga
1-x1-y1N layer and In
X2Al
Y2Ga
1-x2-y2The N layer is formed, described In
X2Al
Y2Ga
1-x2-y2The In content of N layer is less than described In
X1Al
Y1Ga
1-x1-y1The In content of N layer.
Optionally, in described method for manufacturing light-emitting, 0.01＜x1＜0.3,0≤y1＜0.2,0≤x2＜0.1,0≤y2＜0.2, described insert layer comprises 2～40 layers of superlattice structure.
Optionally, in described method for manufacturing light-emitting, described In
X1Al
Y1Ga
1-x1-y1The N layer is near described p type semiconductor layer, described In
X2Al
Y2Ga
1-x2-y2The N layer is near described current-diffusion layer.
Optionally, in described method for manufacturing light-emitting, described In
X1Al
Y1Ga
1-x1-y1The N layer is near described current-diffusion layer, described In
X2Al
Y2Ga
1-x2-y2The N layer is near described p type semiconductor layer.
Optionally, in described method for manufacturing light-emitting, the thickness of described insert layer is between 5nm to 200nm.
Optionally, in described method for manufacturing light-emitting, also be included in and form resilient coating and non-doped nitride layer between described substrate and the n type semiconductor layer successively.
Optionally, in described method for manufacturing light-emitting, also comprise: form the opening that the degree of depth extends to described n type semiconductor layer; Form n type electrode in described opening, described n type semiconductor layer is electrically connected with a power cathode by n type electrode; Form p type electrode on described current-diffusion layer, described p type semiconductor layer is electrically connected with a positive source by p type electrode.
Optionally, in described method for manufacturing light-emitting, also comprise: form n type electrode at described substrate on away from the surface of described n type semiconductor layer, described n type semiconductor layer is electrically connected with a power cathode by described n type electrode; Form p type electrode on described current-diffusion layer, described p type semiconductor layer is electrically connected with a positive source by described p type electrode.
Compared with prior art, the present invention is provided with insert layer between p type semiconductor layer and current-diffusion layer, and described insert layer comprises one deck superlattice structure at least, and described superlattice structure is by In
X1Al
Y1Ga
1-x1-y1N layer and In
X2Al
Y2Ga
1-x2-y2The N layer is formed, described In
X2Al
Y2Ga
1-x2-y2The In content of N layer is less than described In
X1Al
Y1Ga
1-x1-y1The In content of N layer, therefore described In
X2Al
Y2Ga
1-x2-y2The bandwidth of N layer is greater than In
X1Al
Y1Ga
1-x1-y1The bandwidth of N layer, there is certain cushioning effect in described superlattice structure for carrier mobility, simultaneously therefore charge carrier effective tunnelling again can cause electric current to redistribute in the contact-making surface and the insert layer inside of current-diffusion layer and insert layer, prevents that electric current from blocking up; And, because there is certain effect of wearing then in insert layer itself, therefore can not cause the obvious rising of forward voltage; Simultaneously, because insert layer plays the effect of buffering to electric current between p type semiconductor layer and current-diffusion layer, and increased the ESD performance of device.
Description of drawings
Fig. 1 is the light-emitting diode structure schematic diagram of one embodiment of the invention;
Fig. 2 is the schematic diagram of the insert layer of light-emitting diode shown in Figure 1;
Fig. 3 is the schematic flow sheet of the method for manufacturing light-emitting of one embodiment of the invention;
Fig. 4 A～4B is the cross-sectional view of the device of each step correspondence in the method for manufacturing light-emitting of one embodiment of the invention;
Fig. 5 is the light-emitting diode structure schematic diagram of another embodiment of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments light-emitting diode and the manufacture method thereof that the present invention proposes is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only be used for conveniently, the purpose of the aid illustration embodiment of the invention lucidly.
Please refer to Fig. 1, it is the light-emitting diode structure schematic diagram of one embodiment of the invention.Is example at this with gallium nitrate based blue light diode, and described light-emitting diode comprises: substrate 100; Be positioned at n type semiconductor layer 120, active layer 130, p type semiconductor layer 140, insert layer 150 and current-diffusion layer 160 on the described substrate 100 successively.
As shown in Figure 2, described insert layer 150 comprises one deck superlattice structure 151 at least, and described superlattice structure 151 is by In
X1Al
Y1Ga
1-x1-y1N layer 151a and In
X2Al
Y2Ga
1-x2-y2N layer 151b forms, wherein, and described In
X2Al
Y2Ga
1-x2-y2The In content of N layer 151b is less than described In
X1Al
Y1Ga
1-x1-y1The In content of N layer 151a, so In
X2Al
Y2Ga
1-x2-y2The bandwidth of N layer 151b is greater than In
X1Al
Y1Ga
1-x1-y1The bandwidth of N layer 151a.The people repeatedly experimental results show that through the present application, there is certain cushioning effect in described superlattice structure for carrier mobility, charge carrier effective tunnelling again simultaneously, therefore can cause electric current in the contact-making surface and the insert layer 150 inner redistributions of current-diffusion layer 160, prevent that electric current from blocking up with insert layer 150; And, because itself there is certain effect of wearing then in insert layer 150, therefore can not cause the obvious rising of forward voltage; Simultaneously, because insert layer 150 plays the effect of buffering to electric current between p type semiconductor layer 140 and current-diffusion layer 160, and increased the ESD performance of device.
Wherein, 0.01＜x1＜0.3,0≤y1＜0.2,0≤x2＜0.1,0≤y2＜0.2.In the present embodiment, described In
X1Al
Y1Ga
1-x1-y1N layer 151a is preferably In
0.1Al
0.025Ga
0.875N (be x1=0.1, y1=0.025), described In
X2Al
Y2Ga
1-x2-y2N layer 151b is preferably Al
0.025Ga
0.975(be x2=0, y2=0.025), the above-mentioned material ratio is easier to utilize existing board processing and fabricating to N, can reduce production costs and technology difficulty.
Wherein, described insert layer 150 can comprise 2～40 layers of superlattice structure 151.As shown in Figure 2, in the present embodiment, the quantity of described superlattice structure 151 is 5 layers, and this setting can obtain comparatively desirable effect, also can avoid the number of plies too much to increase production cost simultaneously.
In the present embodiment, described In
X1Al
Y1Ga
1-x1-y1N layer 151a is near p type semiconductor layer 140, described In
X2Al
Y2Ga
1-x2-y2N layer 151b is near current-diffusion layer 160.Certainly, in another specific embodiment of the present invention, described In
X1Al
Y1Ga
1-x1-y1N layer 151a also can be near described current-diffusion layer 160, described In
X2Al
Y2Ga
1-x2-y2N layer 151b can realize purpose of the present invention equally near p type semiconductor layer 140.
Preferably, the thickness of described insert layer 150 is between 5nm to 200nm, promptly, the gross thickness of a plurality of superlattice structures 151 is between 5nm to 200nm, insert layer 150 is set to above-mentioned thickness, in that guarantee can be owing to insert layer is too thin when can not effectively not improve the electric current diffusion effect, can guarantee again can be not influenced when electronics injects.It is emphasized that the number of plies of described insert layer 150 and thickness also can slightly adjust in other specific embodiments of the present invention.
Further, described light-emitting diode also comprises resilient coating 111 and the non-doped nitride layer 112 that is formed at successively between substrate 100 and the n type semiconductor layer 120.Described resilient coating 111 and non-doped nitride layer 112 help solving the lattice constant mismatch between substrate 100 and the gallium nitride material and the problem of stress, reduce to be formed at the crystal defect of other rete on the substrate, improve the internal quantum efficiency of light-emitting diode.
In the present embodiment, described light-emitting diode is the light-emitting diode of horizontal structure, as shown in Figure 1, described light-emitting diode also comprises: the degree of depth extend to n type semiconductor layer 120 opening, be formed at the n type electrode 170 in the opening and be formed at p type electrode 180 on the current-diffusion layer 160.Wherein, described opening runs through current-diffusion layer 160, insert layer 150, p type semiconductor layer 140, active layer 130 and part n type semiconductor layer 120, described n type semiconductor layer 120 is electrically connected with power cathode by n type electrode 170, and described p type semiconductor layer 140 is electrically connected with positive source by p type electrode 180.
In another embodiment of the present invention, described light-emitting diode is the light-emitting diode of vertical stratification, as shown in Figure 5, described light-emitting diode also comprises: be formed at described substrate 200 away from described n type semiconductor layer 220 lip-deep n type electrodes 270 and the p type electrode 280 that is formed at described current-diffusion layer 260 tops.Wherein, insert layer 250 is between p type semiconductor layer 240 and current-diffusion layer 260.Described n type semiconductor layer 220 is electrically connected with power cathode by n type electrode 270; Described p type semiconductor layer 240 is electrically connected with positive source by p type electrode 280.Described light-emitting diode is used for when luminous, with p type electrode 280 be connected to positive source, n type electrode 270 is connected to power cathode, the active layer 230 in the LED core is luminous under the function of current.
Accordingly, the embodiment of the invention also provides a kind of method for manufacturing light-emitting, and with reference to figure 3, and in conjunction with Fig. 4 A to Fig. 4 B and Fig. 1, this method for manufacturing light-emitting comprises the steps:
S300 provides a substrate;
Shown in Fig. 4 A, provide substrate 100, because the light-emitting diode that present embodiment provides is horizontal structure (being also referred to as L shaped structure), therefore, described substrate 100 can be nonconducting Sapphire Substrate, and certainly, it also can be gallium nitride substrate or silicon carbide substrates or silicon substrate.
Continue with reference to figure 4A, before forming n type semiconductor layer 120, can also form resilient coating 111 and non-doped nitride layer 112 on described substrate 100 successively, described resilient coating 111 for example is the gallium nitride of low-temperature epitaxy, the gallium nitride material that described non-doped nitride layer 112 for example is non-doping.
S310 forms n type semiconductor layer, active layer, p type semiconductor layer, insert layer and p type semiconductor layer successively on described substrate, wherein, described insert layer comprises one deck superlattice structure at least, and described superlattice structure is by In
X1Al
Y1Ga
1-x1-y1N layer and In
X2Al
Y2Ga
1-x2-y2The N layer is formed, described In
X2Al
Y2Ga
1-x2-y2The In content of N layer is less than described In
X1Al
Y1Ga
1-x1-y1The In content of N layer.
Specifically shown in Fig. 4 B, on non-doped nitride layer 112, form n type semiconductor layer 120, active layer 130, p type semiconductor layer 140, insert layer 150 and current-diffusion layer 160 successively.Specifically, can utilize metal organic chemical vapor deposition (MOCVD) technology to form n type semiconductor layer 120, active layer 130, p type semiconductor layer 140, insert layer 150 and current-diffusion layer 160.Preferable, can in same chamber, finish above-mentioned technology, only need to change different programs (feeding different gas, control gaseous flow), above-mentioned purpose can be realized, and production capacity can be improved.Those skilled in the art can adjust reacting gas and every technological parameter accordingly according to the actual conditions of metallo-organic compound chemical vapour deposition (CVD) board, do not repeat them here, but those skilled in the art should know.
In a specific embodiment of the present invention, after forming described current-diffusion layer 160, utilize the method for photoetching and etching, form the opening that the degree of depth extends to n type semiconductor layer 120; Then, form n type electrode 170 in opening, described n type semiconductor layer 120 is electrically connected with power cathode by n type electrode 170; And on current-diffusion layer 160, forming p type electrode 180, described p type semiconductor layer 140 is electrically connected with positive source by p type electrode 180, and is final, can form the light-emitting diode of horizontal structure shown in Figure 1.
In another specific embodiment of the present invention, as shown in Figure 5, after forming current-diffusion layer 260, can form n type electrode 270 on away from the surface of n type semiconductor layer 220 at described substrate 200, and above described current-diffusion layer 260, form p type electrode 280.Wherein, described n type semiconductor layer 220 is electrically connected with power cathode by n type electrode 270, and p type semiconductor layer 240 is electrically connected with positive source by p type electrode 280, and is final, can form the light-emitting diode of vertical stratification.
Need to prove, the foregoing description is an example with the blue LED, but the present invention is not restricted to this, and the foregoing description can also be red light emitting diodes, yellow light-emitting diode, those skilled in the art can make amendment, replace and be out of shape the present invention according to the foregoing description.
Claims (18)
1. light-emitting diode comprises:
Substrate;
Be positioned at n type semiconductor layer, active layer, p type semiconductor layer, insert layer and current-diffusion layer on the described substrate successively;
Wherein, described insert layer comprises one deck superlattice structure at least, and described superlattice structure is by In
X1Al
Y1Ga
1-x1-y1N layer and In
X2Al
Y2Ga
1-x2-y2The N layer is formed, described In
X2Al
Y2Ga
1-x2-y2The In content of N layer is less than described In
X1Al
Y1Ga
1-x1-y1The In content of N layer.
2. light-emitting diode as claimed in claim 1 is characterized in that, 0.01＜x1＜0.3,0≤y1＜0.2,0≤x2＜0.1,0≤y2＜0.2.
3. light-emitting diode as claimed in claim 1 is characterized in that, described insert layer comprises 2～40 layers of superlattice structure.
4. light-emitting diode as claimed in claim 1 is characterized in that, described In
X1Al
Y1Ga
1-x1-y1The N layer is near described p type semiconductor layer, described In
X2Al
Y2Ga
1-x2-y2The N layer is near described current-diffusion layer.
5. light-emitting diode as claimed in claim 1 is characterized in that, described In
X1Al
Y1Ga
1-x1-y1The N layer is near described current-diffusion layer, described In
X2Al
Y2Ga
1-x2-y2The N layer is near described p type semiconductor layer.
6. light-emitting diode as claimed in claim 1 is characterized in that the thickness of described insert layer is between 5nm to 200nm.
7. light-emitting diode as claimed in claim 1 is characterized in that, also comprises the resilient coating and the non-doped nitride layer that are formed at successively between described substrate and the n type semiconductor layer.
8. as each described light-emitting diode in the claim 1 to 7, it is characterized in that, also comprise:
The degree of depth extends to the opening of described n type semiconductor layer;
Be formed at the n type electrode in the described opening, described n type semiconductor layer is electrically connected with a power cathode by described n type electrode;
Be formed at the p type electrode on the described current-diffusion layer, described p type semiconductor layer is electrically connected with a positive source by described p type electrode.
9. as each described light-emitting diode in the claim 1 to 7, it is characterized in that, also comprise:
Be formed at described substrate away from the lip-deep n type of described n type semiconductor layer electrode, described n type semiconductor layer is electrically connected with a power cathode by described n type electrode;
Be formed at the p type electrode on the described current-diffusion layer, described p type semiconductor layer is electrically connected with a positive source by described p type electrode.
10. a manufacturing method for LED is characterized in that, comprising:
One substrate is provided;
Form n type semiconductor layer, active layer, p type semiconductor layer, insert layer and current-diffusion layer on described substrate successively, wherein, described insert layer comprises one deck superlattice structure at least, and described superlattice structure is by In
X1Al
Y1Ga
1-x1-y1N layer and In
X2Al
Y2Ga
1-x2-y2The N layer is formed, described In
X2Al
Y2Ga
1-x2-y2The In content of N layer is less than described In
X1Al
Y1Ga
1-x1-y1The In content of N layer.
11. manufacturing method for LED as claimed in claim 10 is characterized in that, 0.01＜x1＜0.3,0≤y1＜0.2,0≤x2＜0.1,0≤y2＜0.2.
12. manufacturing method for LED as claimed in claim 10 is characterized in that, described insert layer comprises 2～40 layers of superlattice structure.
13. manufacturing method for LED as claimed in claim 10 is characterized in that, described In
X1Al
Y1Ga
1-x1-y1The N layer is near described p type semiconductor layer, described In
X2Al
Y2Ga
1-x2-y2The N layer is near described current-diffusion layer.
14. manufacturing method for LED as claimed in claim 10 is characterized in that, described In
X1Al
Y1Ga
1-x1-y1The N layer is near described current-diffusion layer, described In
X2Al
Y2Ga
1-x2-y2The N layer is near described p type semiconductor layer.
15. manufacturing method for LED as claimed in claim 10 is characterized in that, the thickness of described insert layer is between 5nm to 200nm.
16. manufacturing method for LED as claimed in claim 10 is characterized in that, also is included in and forms resilient coating and non-doped nitride layer between described substrate and the n type semiconductor layer successively.
17. as each described manufacturing method for LED in the claim 10 to 16, it is characterized in that, also comprise:
Form the opening that the degree of depth extends to described n type semiconductor layer;
Form n type electrode in described opening, described n type semiconductor layer is electrically connected with a power cathode by described n type electrode;
Form p type electrode on described current-diffusion layer, described p type semiconductor layer is electrically connected with a positive source by described p type electrode.
18. as each described manufacturing method for LED in the claim 10 to 16, it is characterized in that, also comprise:
Form n type electrode at described substrate on away from the surface of described n type semiconductor layer, described n type semiconductor layer is electrically connected with a power cathode by described n type electrode;
Form p type electrode on described current-diffusion layer, described p type semiconductor layer is electrically connected with a positive source by described p type electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100842010A CN102185053A (en) | 2011-04-02 | 2011-04-02 | Light-emitting diode and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100842010A CN102185053A (en) | 2011-04-02 | 2011-04-02 | Light-emitting diode and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102185053A true CN102185053A (en) | 2011-09-14 |
Family
ID=44571187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100842010A Pending CN102185053A (en) | 2011-04-02 | 2011-04-02 | Light-emitting diode and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102185053A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103337568A (en) * | 2013-05-22 | 2013-10-02 | 西安交通大学 | Strained superlattice tunnel junction ultraviolet LED (light emitting diode) epitaxial structure and production method thereof |
| CN103367581A (en) * | 2013-07-26 | 2013-10-23 | 东南大学 | Light emitting diode with electronic barrier layer structure |
| CN103367574A (en) * | 2012-03-30 | 2013-10-23 | 华夏光股份有限公司 | Light emitting diode device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1377095A (en) * | 2001-03-23 | 2002-10-30 | 洲磊科技股份有限公司 | Semiconductor LED on oblique substrate |
| KR100661606B1 (en) * | 2005-10-11 | 2006-12-26 | 삼성전기주식회사 | Nitride semiconductor device |
| CN101183642A (en) * | 2007-12-10 | 2008-05-21 | 厦门大学 | Method of producing p-GaN low-resistance Ohm contact |
| US20080303055A1 (en) * | 2005-12-27 | 2008-12-11 | Seong Tae-Yeon | Group-III Nitride-Based Light Emitting Device |
| CN101645480A (en) * | 2009-06-22 | 2010-02-10 | 武汉华灿光电有限公司 | Method for enhancing antistatic ability of GaN-based light-emitting diode |
| CN101694858A (en) * | 2009-10-15 | 2010-04-14 | 上海蓝光科技有限公司 | LED epitaxy structure and manufacturing method thereof |
| CN101894895A (en) * | 2009-05-21 | 2010-11-24 | Lg伊诺特有限公司 | Light emitting device and light emitting device package having the same |
-
2011
- 2011-04-02 CN CN2011100842010A patent/CN102185053A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1377095A (en) * | 2001-03-23 | 2002-10-30 | 洲磊科技股份有限公司 | Semiconductor LED on oblique substrate |
| KR100661606B1 (en) * | 2005-10-11 | 2006-12-26 | 삼성전기주식회사 | Nitride semiconductor device |
| US20080303055A1 (en) * | 2005-12-27 | 2008-12-11 | Seong Tae-Yeon | Group-III Nitride-Based Light Emitting Device |
| CN101183642A (en) * | 2007-12-10 | 2008-05-21 | 厦门大学 | Method of producing p-GaN low-resistance Ohm contact |
| CN101894895A (en) * | 2009-05-21 | 2010-11-24 | Lg伊诺特有限公司 | Light emitting device and light emitting device package having the same |
| CN101645480A (en) * | 2009-06-22 | 2010-02-10 | 武汉华灿光电有限公司 | Method for enhancing antistatic ability of GaN-based light-emitting diode |
| CN101694858A (en) * | 2009-10-15 | 2010-04-14 | 上海蓝光科技有限公司 | LED epitaxy structure and manufacturing method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367574A (en) * | 2012-03-30 | 2013-10-23 | 华夏光股份有限公司 | Light emitting diode device |
| CN103367574B (en) * | 2012-03-30 | 2016-06-01 | 华夏光股份有限公司 | Light-emitting diode assembly |
| CN103337568A (en) * | 2013-05-22 | 2013-10-02 | 西安交通大学 | Strained superlattice tunnel junction ultraviolet LED (light emitting diode) epitaxial structure and production method thereof |
| CN103337568B (en) * | 2013-05-22 | 2016-01-20 | 西安交通大学 | Strained super lattice tunnel junction ultraviolet LED epitaxial structure and preparation method thereof |
| CN103367581A (en) * | 2013-07-26 | 2013-10-23 | 东南大学 | Light emitting diode with electronic barrier layer structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102185055A (en) | Light-emitting diode and manufacturing method thereof | |
| CN103650173A (en) | Semiconductor light-emitting device | |
| CN102760808B (en) | A kind of epitaxial wafer of light-emitting diode and manufacture method thereof | |
| CN111599902B (en) | Light-emitting diode with hole injection structure electron barrier layer | |
| CN104681676B (en) | A kind of LED epitaxial slice | |
| CN104638083A (en) | GaN-based LED (Light-Emitting Diode) epitaxial structure and manufacturing method thereof | |
| CN204407349U (en) | A kind of gallium nitride based light emitting diode | |
| KR20130012375A (en) | Semiconductor light emitting device and manufacturing method of the same | |
| CN103594579B (en) | A kind of epitaxial structure of iii-nitride light emitting devices | |
| CN103972340B (en) | Nitride semiconductor structure and semiconductor light-emitting elements | |
| CN102142492B (en) | Multiple quantum well structure, manufacturing method thereof and light emitting diode | |
| CN109962132A (en) | LED epitaxial slice and its manufacturing method | |
| CN105514239B (en) | A kind of light emitting diode | |
| CN102185053A (en) | Light-emitting diode and manufacturing method thereof | |
| CN107833956B (en) | Nitride semiconductor structure and semiconductor light emitting element | |
| CN103035790A (en) | Light emitting diode epitaxial wafer and preparation method thereof | |
| CN103165772A (en) | Group III nitride semiconductor light-emitting device | |
| CN108417680B (en) | Semiconductor LED chip with high current diffusion efficiency | |
| CN103985799A (en) | Light-emitting diode and manufacturing method thereof | |
| CN102185054A (en) | Light-emitting diode (LED) and manufacturing method thereof | |
| CN103715317A (en) | Light emitting diode device | |
| CN108598235B (en) | GaN-based LED structure and preparation method thereof | |
| TWI449224B (en) | Light emitting semiconductor device | |
| CN111640829A (en) | Light-emitting diode with composite electron blocking layer and preparation method thereof | |
| CN105355649A (en) | Light emitting diode epitaxial wafer and fabrication method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20110914 |