CN107086257B - A kind of epitaxial wafer of gallium nitride based light emitting diode and preparation method thereof - Google Patents
A kind of epitaxial wafer of gallium nitride based light emitting diode and preparation method thereof Download PDFInfo
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Abstract
The invention discloses epitaxial wafers of a kind of gallium nitride based light emitting diode and preparation method thereof, belong to technical field of semiconductors.Epitaxial wafer includes Sapphire Substrate, nitride buffer layer, undoped gallium nitride layer, n type gallium nitride layer, multiple quantum well layer, p-type gallium nitride layer and p-type gallium nitride layer, n type gallium nitride layer includes n type gallium nitride layer ontology and multiple protrusions, n type gallium nitride layer ontology is column structure, the bottom surface of n type gallium nitride layer ontology is arranged on undoped gallium nitride layer, and multiple protrusions are arranged on the top surface of n type gallium nitride layer ontology with array manner；Multiple quantum well layer includes multiple quantum well layer ontology and fill part, fill part is arranged on the n type gallium nitride layer ontology exposed between multiple protrusions and fills up the space between multiple protrusions, fill part and multiple protrusion composition column structures, multiple quantum well layer ontology is column structure, and multiple quantum well layer ontology is arranged on the column structure of fill part and multiple protrusion compositions.Luminous efficiency of the present invention is high.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to the epitaxial wafer and its system of a kind of gallium nitride based light emitting diode
Preparation Method.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is that one kind can effectively turn electric energy
Turn to the semiconductor devices of luminous energy, LED includes gallium nitride based LED and AlGaInP-based LED at present, wherein gallium nitride based LED by
To more and more concerns and research.
The epitaxial wafer of gallium nitride based LED includes Sapphire Substrate and stacks gradually gallium nitride on a sapphire substrate
Buffer layer, undoped gallium nitride layer, n type gallium nitride layer, multiple quantum well layer (English: Multiple Quantum Well, referred to as:
MQW), p-type gallium nitride layer and p-type gallium nitride layer.When there is electric current to pass through gallium nitride based LED, the electronics and P of n type gallium nitride layer
The hole of type gallium nitride layer enters multiple quantum well layer recombination luminescence.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
The light that multiple quantum well layer issues can be projected LED by all directions, but Sapphire Substrate is to be fixed on pedestal in the led
On, multiple quantum well layer is substantially all to the light that Sapphire Substrate direction is projected to be absorbed and wasted by pedestal, and LED is caused
Luminous efficiency it is lower.
Summary of the invention
It absorbs to solve pedestal in the prior art to Sapphire Substrate injection light, causes the luminous efficiency of light emitting diode
Low problem, the embodiment of the invention provides epitaxial wafers of a kind of gallium nitride based light emitting diode and preparation method thereof.The skill
Art scheme is as follows:
On the one hand, the embodiment of the invention provides a kind of epitaxial wafer of gallium nitride based light emitting diode, the epitaxial wafer packets
Include Sapphire Substrate and the nitride buffer layer being sequentially laminated in the Sapphire Substrate, undoped gallium nitride layer, N-type
Gallium nitride layer, multiple quantum well layer, p-type gallium nitride layer and p-type gallium nitride layer, the n type gallium nitride layer include n type gallium nitride layer sheet
Body and multiple protrusions, the n type gallium nitride layer ontology are column structure, and the bottom surface of the n type gallium nitride layer ontology is arranged in institute
It states on undoped gallium nitride layer, the multiple protrusion is arranged on the top surface of the n type gallium nitride layer ontology with array manner；Institute
Stating multiple quantum well layer includes multiple quantum well layer ontology and fill part, and the fill part setting is revealed between the multiple protrusion
It is filled up on the n type gallium nitride layer ontology out and by the space between the multiple protrusion, the fill part and described more
A protrusion composition column structure, the multiple quantum well layer ontology are column structure, and the multiple quantum well layer ontology is arranged described
On the column structure of fill part and the multiple protrusion composition.
Optionally, the protrusion is cylinder or centrum.
Optionally, the height of the protrusion is 50~300nm.
Optionally, the maximum distance between the two o'clock on the part of the protrusion and the n type gallium nitride layer body contacts
For 100~350nm.
Optionally, the minimum distance between two protrusions is 2~4 μm.
On the other hand, the embodiment of the invention provides a kind of preparation method of the epitaxial wafer of gallium nitride based light emitting diode,
The preparation method includes:
Growing gallium nitride buffer layer on a sapphire substrate；
Undoped gallium nitride layer is grown on the nitride buffer layer；
The gallium nitride of one layer of n-type doping is grown on the undoped gallium nitride layer；
The gallium nitride of the n-type doping is patterned, obtains n type gallium nitride layer, the n type gallium nitride layer includes N
Type gallium nitride layer ontology and multiple protrusions, the n type gallium nitride layer ontology are column structure, the n type gallium nitride layer ontology
Bottom surface is arranged on the undoped gallium nitride layer, and the multiple protrusion is arranged in the n type gallium nitride layer sheet with array manner
On the top surface of body；
Multiple quantum well layer, the multiple quantum well layer packet are grown on the n type gallium nitride layer ontology and the multiple protrusion
Multiple quantum well layer ontology and fill part are included, the N-type nitrogen exposed between the multiple protrusion is arranged in the fill part
Change on gallium layer ontology and fills up the space between the multiple protrusion, the fill part and the multiple protrusion composition cylinder
Structure, the multiple quantum well layer ontology are column structure, and multiple quantum well layer ontology setting is in the fill part and described
On the column structure of multiple protrusion compositions；
The growing P-type gallium nitride layer on the multiple quantum well layer ontology；
The growing P-type gallium nitride layer on the p-type gallium nitride layer.
Optionally, the protrusion is cylinder or centrum.
In one possible implementation of the present invention, when the protrusion is cylinder, the nitrogen to the n-type doping
Change gallium to be patterned, obtain n type gallium nitride layer, comprising:
Mask plate is arranged on the n type gallium nitride layer；
Under the protection of the mask plate, it is patterned using gallium nitride of the dry etching technology to the n-type doping,
Obtain n type gallium nitride layer.
It is described to the n-type doping when the protrusion is centrum in the alternatively possible implementation of the present invention
Gallium nitride is patterned, and obtains n type gallium nitride layer, comprising:
The photoresist with certain figure is formed on the n type gallium nitride layer using photoetching technique；
Under the protection of the photoresist, it is patterned using gallium nitride of the dry etching technology to the n-type doping,
Obtain n type gallium nitride layer.
It is described to the n-type doping when the protrusion is cylinder in another of the invention possible implementation
Gallium nitride is patterned, and obtains n type gallium nitride layer, comprising:
The photoresist with certain figure is formed on the n type gallium nitride layer using photoetching technique；
Under the protection of the photoresist, it is patterned using gallium nitride of the wet etching technique to the n-type doping,
Obtain n type gallium nitride layer.
Technical solution provided in an embodiment of the present invention has the benefit that
By arranging multiple protrusions in the form of an array on n type gallium nitride layer ontology, then in multiple protrusions and multiple convex
Multiple quantum well layer is set on the n type gallium nitride layer ontology exposed between rising, due to above protrusion (one far from n type gallium nitride layer
Face) it is different with position with the crystal orientation of convex side faceted crystal, multiple quantum well layer had both been grown in the polar surface above protrusion, was also grown
On the semi-polarity face of raised side and non-polar plane, the multiple quantum well layer only grown in polar surface just has polarization to cause
Crystal defect, therefore part multiple quantum well layer is grown to replace with from polar surface and is grown on semi-polarity face and non-polar plane, it can
To improve crystal quality, and then removes to make up indium content in multiple quantum well layer to the raising of crystal quality using this and increase to crystal matter
The adverse effect of amount, to realize the indium content increased in multiple quantum well layer in the case where keeping crystal quality, multiple quantum wells
Differ farther between the composition material of layer and the composition material of n type gallium nitride layer, the refractive index and n type gallium nitride of multiple quantum well layer
Difference between the refractive index of layer increases with it, and the light for being conducive to project towards Sapphire Substrate direction is in multiple quantum well layer and N
It is totally reflected on the interface of type gallium nitride layer, to reduce the light projected towards Sapphire Substrate direction, improves the hair of LED
Light efficiency.And increase the indium content in multiple quantum well layer in the case where not reducing crystal quality, Multiple-quantum can also be improved
Band difference in well layer between indium gallium nitrogen Quantum Well and gallium nitride quantum base is conducive to gallium nitride quantum base and is strapped in carrier
Recombination luminescence is carried out in indium gallium nitrogen Quantum Well, further increases the luminous efficiency of LED.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of the epitaxial wafer for gallium nitride based light emitting diode that the embodiment of the present invention one provides；
Fig. 2 is a kind of stream of the preparation method of the epitaxial wafer of gallium nitride based light emitting diode provided by Embodiment 2 of the present invention
Cheng Tu.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
The embodiment of the invention provides a kind of epitaxial wafers of gallium nitride based light emitting diode, and referring to Fig. 1, which includes
Sapphire Substrate 1 and the nitride buffer layer 2 being sequentially laminated in Sapphire Substrate 1, undoped gallium nitride layer 3, N-type nitrogen
Change gallium layer 4, multiple quantum well layer 5, p-type gallium nitride layer 6 and p-type gallium nitride layer 7.
In the present embodiment, n type gallium nitride layer 4 includes n type gallium nitride layer ontology 41 and multiple raised 42, n type gallium nitride
Layer ontology 41 is column structure, and the bottom surface of n type gallium nitride layer ontology 41 is arranged on undoped gallium nitride layer 3, multiple raised 42
It is arranged in array manner on the top surface of n type gallium nitride layer ontology 41.Multiple quantum well layer 5 includes multiple quantum well layer ontology 51 and fills out
Fill part 52, fill part 52 is arranged on the n type gallium nitride layer ontology 41 exposed between multiple raised 42 and by multiple protrusions
Space between 42 is filled up, and fill part 52 and multiple raised 42 composition column structures, multiple quantum well layer ontology 51 is cylinder knot
Structure, multiple quantum well layer ontology 51 are arranged on the column structure of fill part 52 and multiple raised 42 compositions.
Wherein, the bottom surface and top surface of n type gallium nitride layer ontology are defined according to the stacking direction of epitaxial wafer, N-type nitridation
The bottom surface of gallium layer ontology is with Sapphire Substrate in n type gallium nitride layer ontology apart from nearest surface, n type gallium nitride layer ontology
Top surface is with Sapphire Substrate in n type gallium nitride layer ontology apart from farthest surface.
The embodiment of the present invention by arranging multiple protrusions in the form of an array on n type gallium nitride layer ontology, then multiple convex
Rise and multiple protrusions between multiple quantum well layer is set on the n type gallium nitride layer ontology that exposes, due to above protrusion (far from N-type
The one side of gallium nitride layer) it is different with position with the crystal orientation of convex side faceted crystal, multiple quantum well layer had both been grown in the pole above protrusion
Property face on, be also grown on the semi-polarity face and non-polar plane of raised side, the multiple quantum well layer that only grows in polar surface is
There is polarization to cause crystal defect, therefore part multiple quantum well layer is grown from polar surface and replaces with semi-polarity face and non-pole
Property is grown on face, crystal quality can be improved, and then remove to make up indium in multiple quantum well layer to the raising of crystal quality using this and contain
Amount increases the adverse effect to crystal quality, to realize the indium increased in multiple quantum well layer in the case where keeping crystal quality
Content differs farther between the composition material of multiple quantum well layer and the composition material of n type gallium nitride layer, the refraction of multiple quantum well layer
Difference between rate and the refractive index of n type gallium nitride layer increases with it, and is conducive to exist towards the light that Sapphire Substrate direction is projected
It is totally reflected on the interface of multiple quantum well layer and n type gallium nitride layer, thus what reduction was projected towards Sapphire Substrate direction
Light improves the luminous efficiency of LED.And increase the indium content in multiple quantum well layer in the case where not reducing crystal quality, also
The band difference in multiple quantum well layer between indium gallium nitrogen Quantum Well and gallium nitride quantum base can be improved, be conducive to gallium nitride quantum base
Carrier is strapped in indium gallium nitrogen Quantum Well and carries out recombination luminescence, further increases the luminous efficiency of LED.
Optionally, protrusion can be cylinder or centrum.Cylinder or centrum are set by protrusion, is realized simple and convenient.
Specifically, cylinder can be that perhaps prism centrum can be circular cone or pyramid to cylinder.
Optionally, raised height can be 50~300nm.If the height of protrusion is lower than 50nm, n type gallium nitride layer
The intimate plane in surface is unable to reach the effect for improving LED luminous efficiency；If the height of protrusion is higher than 300nm, multiple quantum well layer
Protrusion cannot be filled and led up, also there is protrusion on the surface of multiple quantum well layer, impacts to the growth of p-type gallium nitride layer.Wherein, raised
Height refer to the maximum distance in protrusion between each point and n type gallium nitride layer ontology.
Preferably, raised height can be 175nm.
Optionally, the maximum distance between the two o'clock on the part of protrusion and n type gallium nitride layer body contacts can be 100
~350nm.If the maximum distance between two o'clock on the part of protrusion and n type gallium nitride layer body contacts is lower than 100nm, convex
Too small, the intimate plane in the surface of n type gallium nitride layer is played, the effect for improving LED luminous efficiency is unable to reach；If protrusion and N-type nitrogen
The maximum distance changed between the two o'clock on the part of gallium layer body contacts is higher than 500nm, then protrusion is too big, n type gallium nitride layer
Surface is also intimate plane, is unable to reach the effect for improving luminous efficiency.Wherein, protrusion and n type gallium nitride layer body contacts
The maximum distance between two o'clock on part refers to the protrusion two o'clock farthest with distance on the part of n type gallium nitride layer body contacts
The distance between.
Preferably, the maximum distance between the two o'clock on the part of protrusion and n type gallium nitride layer body contacts can be
225nm。
Optionally, the minimum distance between two protrusions can be 2~4 μm.If the minimum distance between two protrusions is low
In 2 μm, then the area that protrusion occupies is too big, and the intimate plane in the surface of n type gallium nitride layer is unable to reach and improves LED luminous efficiency
Effect；If the minimum distance between two protrusions is higher than 4 μm, the area that protrusion occupies is too small, the surface of n type gallium nitride layer
It is also intimate plane, is unable to reach the effect for improving luminous efficiency.Wherein, the minimum distance between two protrusions refers to distance most
The distance between two close protrusions.
Preferably, the minimum distance between two protrusions can be 3 μm.
Specifically, Sapphire Substrate can use [0001] crystal orientation sapphire.
Optionally, the thickness of nitride buffer layer can be 15~35nm.
Optionally, the thickness of undoped gallium nitride layer can be 1~5 μm.
Optionally, the thickness of n type gallium nitride layer can be 1~5 μm.
Optionally, the doping concentration of n type gallium nitride layer can be 1018~1019cm-3。
Specifically, multiple quantum well layer includes that multiple indium gallium nitrogen Quantum Well and multiple gallium nitride quantum are built, multiple indium gallium nitrogen quantity
Sub- trap and multiple gallium nitride quantum build alternately laminated setting.
Optionally, the thickness of indium gallium nitrogen Quantum Well can be 3nm, and the thickness that gallium nitride quantum is built can be 9~20nm.
Optionally, the number of plies that indium gallium nitrogen Quantum Well and gallium nitride quantum are built is identical, and the number of plies that gallium nitride quantum is built can be 3
~15 layers.
Specifically, p-type aluminum gallium nitride (AlGaN) layer can be AlxGa1-xN layers, 0.1 < x < 0.5.
Optionally, the thickness of p-type gallium nitride layer can be 50~150nm.
Optionally, the thickness of p-type gallium nitride layer can be 105~500nm.
Embodiment two
The embodiment of the invention provides a kind of preparation methods of the epitaxial wafer of gallium nitride based light emitting diode, are suitable for preparation
The epitaxial wafer that embodiment one provides, referring to fig. 2, which includes:
Step 200: controlled at 1000~1200 DEG C, Sapphire Substrate being annealed 8 minutes in hydrogen atmosphere, is gone forward side by side
Row nitrogen treatment.
It is to be appreciated that step 200 can play the role of cleaning sapphire substrate surface.
In the present embodiment, control temperature, pressure each mean temperature, pressure in the reaction chamber of control growth epitaxial wafer,
It repeats no more hereinafter.
In the present embodiment, Sapphire Substrate uses [0001] crystal orientation sapphire.
Step 201: controlled at 400~600 DEG C, pressure is 400~600Torr, grows nitrogen on a sapphire substrate
Change gallium buffer layer.
Optionally, the thickness of nitride buffer layer can be 15~35nm.
Optionally, after step 201, which can also include:
Controlled at 1000~1200 DEG C, pressure is 400~600Torr, and the duration is 5~10 minutes, to nitridation
Gallium buffer layer carries out in-situ annealing processing.
Step 202: controlled at 1000~1100 DEG C, pressure is 100~500Torr, raw on nitride buffer layer
Long undoped gallium nitride layer.
Optionally, the thickness of undoped gallium nitride layer can be 1~5 μm.
Step 203: controlled at 1000~1200 DEG C, pressure is 100~500Torr, on undoped gallium nitride layer
Grow the gallium nitride of one layer of n-type doping.
Optionally, the thickness of the gallium nitride of n-type doping can be 1~5 μm.
Optionally, the doping concentration of N type dopant can be 10 in the gallium nitride of n-type doping18~1019cm-3。
Step 204: the gallium nitride of n-type doping being patterned, n type gallium nitride layer is obtained.
In the present embodiment, n type gallium nitride layer includes n type gallium nitride layer ontology and multiple protrusions, n type gallium nitride layer ontology
Bottom surface for column structure, n type gallium nitride layer ontology is arranged on undoped gallium nitride layer, and multiple protrusions are arranged with array manner
On the top surface of n type gallium nitride layer ontology.
Optionally, protrusion can be cylinder or centrum.
In a kind of implementation of the present embodiment, when protrusion is cylinder, which may include:
Mask plate is arranged on n type gallium nitride layer；
Under the protection of mask plate, it is patterned using gallium nitride of the dry etching technology to n-type doping, obtains N-type
Gallium nitride layer.
Specifically, dry etching can be plasma etching technology.
In another implementation of the present embodiment, when protrusion is centrum, which may include:
The photoresist with certain figure is formed on n type gallium nitride layer using photoetching technique；
Under the protection of photoresist, it is patterned using gallium nitride of the dry etching technology to n-type doping, obtains N-type
Gallium nitride layer.
Wherein, being formed on n type gallium nitride layer has certain figure photoresist, the shape of the shape of the figure and protrusion and
It is distributed corresponding.
It should be noted that under the protection of photoresist, using the gallium nitride of the graphical n-type doping of dry etching technology
When, protrusion that plasma is reduced with the increase of depth to the etch rate of the gallium nitride of n-type doping, therefore eventually formed
It is cone.
In another implementation of the present embodiment, when protrusion is cylinder, which may include:
The photoresist with certain figure is formed on n type gallium nitride layer using photoetching technique；
Under the protection of photoresist, it is patterned using gallium nitride of the wet etching technique to n-type doping, obtains N-type
Gallium nitride layer.
Optionally, raised height can be 50~300nm.If the height of protrusion is lower than 50nm, n type gallium nitride layer
The intimate plane in surface is unable to reach the effect for improving LED luminous efficiency；If the height of protrusion is higher than 300nm, multiple quantum well layer
Protrusion cannot be filled and led up, also there is protrusion on the surface of multiple quantum well layer, impacts to the growth of p-type gallium nitride layer.Wherein, raised
Height refer to the maximum distance in protrusion between each point and n type gallium nitride layer ontology.
Preferably, raised height can be 175nm.
Optionally, the maximum distance between the two o'clock on the part of protrusion and n type gallium nitride layer body contacts can be 100
~350nm.If the maximum distance between two o'clock on the part of protrusion and n type gallium nitride layer body contacts is lower than 100nm, convex
Too small, the intimate plane in the surface of n type gallium nitride layer is played, the effect for improving LED luminous efficiency is unable to reach；If protrusion and N-type nitrogen
The maximum distance changed between the two o'clock on the part of gallium layer body contacts is higher than 500nm, then protrusion is too big, n type gallium nitride layer
Surface is also intimate plane, is unable to reach the effect for improving luminous efficiency.
Preferably, the maximum distance between the two o'clock on the part of protrusion and n type gallium nitride layer body contacts can be
225nm。
Optionally, the minimum distance between two protrusions can be 2~4 μm.If the minimum distance between two protrusions is low
In 2 μm, then the area that protrusion occupies is too big, and the intimate plane in the surface of n type gallium nitride layer is unable to reach and improves LED luminous efficiency
Effect；If the minimum distance between two protrusions is higher than 4 μm, the area that protrusion occupies is too small, the surface of n type gallium nitride layer
It is also intimate plane, is unable to reach the effect for improving luminous efficiency.
Preferably, the minimum distance between two protrusions can be 3 μm.
Step 205: growing multiple quantum well layer on n type gallium nitride layer ontology and multiple protrusions.
Multiple quantum well layer, p-type gallium nitride layer and p-type gallium nitride layer are successively grown on n type gallium nitride layer.
In the present embodiment, multiple quantum well layer includes that multiple indium gallium nitrogen Quantum Well and multiple gallium nitride quantum are built, multiple indiums
Gallium nitrogen Quantum Well and multiple gallium nitride quantum build alternately laminated setting.The thickness of indium gallium nitrogen Quantum Well can be 3nm, growth temperature
It is 720~829 DEG C, growth pressure is 100~500Torr；The thickness that gallium nitride quantum is built can be 9~20nm, growth temperature
It is 850~959 DEG C, growth pressure is 100~500Torr.The number of plies that indium gallium nitrogen Quantum Well and gallium nitride quantum are built is identical, nitridation
The number of plies that gallium quantum is built can be 3~15 layers.
Step 206: controlled at 850~1080 DEG C, pressure is 200~500Torr, raw on multiple quantum well layer ontology
Long p-type gallium nitride layer.
Specifically, p-type aluminum gallium nitride (AlGaN) layer can be AlxGa1-xN layers, 0.1 < x < 0.5.
Optionally, the thickness of p-type gallium nitride layer can be 50~150nm.
Step 207: controlled at 750~1080 DEG C, pressure is 200~500Torr, grows P on p-type gallium nitride layer
Type gallium nitride layer.
Optionally, the thickness of p-type gallium nitride layer can be 105~500nm.
Step 208: controlled at 650~850 DEG C, the duration is 5~15 minutes, is annealed in nitrogen atmosphere
Processing.
The embodiment of the present invention by arranging multiple protrusions in the form of an array on n type gallium nitride layer ontology, then multiple convex
Rise and multiple protrusions between multiple quantum well layer is set on the n type gallium nitride layer ontology that exposes, due to above protrusion (far from N-type
The one side of gallium nitride layer) it is different with position with the crystal orientation of convex side faceted crystal, multiple quantum well layer had both been grown in the pole above protrusion
Property face on, be also grown on the semi-polarity face and non-polar plane of raised side, the multiple quantum well layer that only grows in polar surface is
There is polarization to cause crystal defect, therefore part multiple quantum well layer is grown from polar surface and replaces with semi-polarity face and non-pole
Property is grown on face, crystal quality can be improved, and then remove to make up indium in multiple quantum well layer to the raising of crystal quality using this and contain
Amount increases the adverse effect to crystal quality, to realize the indium increased in multiple quantum well layer in the case where keeping crystal quality
Content differs farther between the composition material of multiple quantum well layer and the composition material of n type gallium nitride layer, the refraction of multiple quantum well layer
Difference between rate and the refractive index of n type gallium nitride layer increases with it, and is conducive to exist towards the light that Sapphire Substrate direction is projected
It is totally reflected on the interface of multiple quantum well layer and n type gallium nitride layer, thus what reduction was projected towards Sapphire Substrate direction
Light improves the luminous efficiency of LED.And increase the indium content in multiple quantum well layer in the case where not reducing crystal quality, also
The band difference in multiple quantum well layer between indium gallium nitrogen Quantum Well and gallium nitride quantum base can be improved, be conducive to gallium nitride quantum base
Carrier is strapped in indium gallium nitrogen Quantum Well and carries out recombination luminescence, further increases the luminous efficiency of LED.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of epitaxial wafer of gallium nitride based light emitting diode, the epitaxial wafer include Sapphire Substrate and are sequentially laminated on
Nitride buffer layer, undoped gallium nitride layer, n type gallium nitride layer, multiple quantum well layer, p-type gallium aluminium in the Sapphire Substrate
Nitrogen layer, p-type gallium nitride layer, which is characterized in that the n type gallium nitride layer includes n type gallium nitride layer ontology and multiple protrusions, described
N type gallium nitride layer ontology is column structure, and the bottom surface of the n type gallium nitride layer ontology is arranged in the undoped gallium nitride layer
On, the multiple protrusion is arranged on the top surface of the n type gallium nitride layer ontology with array manner；The multiple quantum well layer includes
The N-type nitridation exposed between the multiple protrusion is arranged in multiple quantum well layer ontology and fill part, the fill part
It is filled up on gallium layer ontology and by the space between the multiple protrusion, the fill part and the multiple protrusion composition cylinder knot
Structure, the multiple quantum well layer ontology are column structure, and multiple quantum well layer ontology setting is in the fill part and described more
On the column structure of a protrusion composition.
2. epitaxial wafer according to claim 1, which is characterized in that the protrusion is cylinder or centrum.
3. epitaxial wafer according to claim 1 or 2, which is characterized in that the height of the protrusion is 50~300nm.
4. epitaxial wafer according to claim 1 or 2, which is characterized in that the protrusion connects with the n type gallium nitride layer ontology
The maximum distance between two o'clock on the part of touching is 100~350nm.
5. epitaxial wafer according to claim 1 or 2, which is characterized in that two it is described protrusion between minimum distance be 2~
4μm。
6. a kind of preparation method of the epitaxial wafer of gallium nitride based light emitting diode, which is characterized in that the preparation method includes:
Growing gallium nitride buffer layer on a sapphire substrate；
Undoped gallium nitride layer is grown on the nitride buffer layer；
The gallium nitride of one layer of n-type doping is grown on the undoped gallium nitride layer；
The gallium nitride of the n-type doping is patterned, n type gallium nitride layer is obtained, the n type gallium nitride layer includes N-type nitrogen
Change gallium layer ontology and multiple protrusions, the n type gallium nitride layer ontology is column structure, the bottom surface of the n type gallium nitride layer ontology
It is arranged on the undoped gallium nitride layer, the multiple protrusion is arranged in the n type gallium nitride layer ontology with array manner
On top surface；
Multiple quantum well layer is grown on the n type gallium nitride layer ontology and the multiple protrusion, the multiple quantum well layer includes more
The n type gallium nitride exposed between the multiple protrusion is arranged in quantum well layer ontology and fill part, the fill part
It is filled up on layer ontology and by the space between the multiple protrusion, the fill part and the multiple protrusion composition cylinder knot
Structure, the multiple quantum well layer ontology are column structure, and multiple quantum well layer ontology setting is in the fill part and described more
On the column structure of a protrusion composition；
The growing P-type gallium nitride layer on the multiple quantum well layer ontology；
The growing P-type gallium nitride layer on the p-type gallium nitride layer.
7. preparation method according to claim 6, which is characterized in that the protrusion is cylinder or centrum.
8. preparation method according to claim 7, which is characterized in that described to the N-type when the protrusion is cylinder
The gallium nitride of doping is patterned, and obtains n type gallium nitride layer, comprising:
Mask plate is arranged on the n type gallium nitride layer；
Under the protection of the mask plate, it is patterned, is obtained using gallium nitride of the dry etching technology to the n-type doping
N type gallium nitride layer.
9. preparation method according to claim 7, which is characterized in that described to the N-type when the protrusion is centrum
The gallium nitride of doping is patterned, and obtains n type gallium nitride layer, comprising:
The photoresist with certain figure is formed on the n type gallium nitride layer using photoetching technique；
Under the protection of the photoresist, it is patterned, is obtained using gallium nitride of the dry etching technology to the n-type doping
N type gallium nitride layer.
10. preparation method according to claim 7, which is characterized in that described to the N when the protrusion is cylinder
The gallium nitride of type doping is patterned, and obtains n type gallium nitride layer, comprising:
The photoresist with certain figure is formed on the n type gallium nitride layer using photoetching technique；
Under the protection of the photoresist, it is patterned, is obtained using gallium nitride of the wet etching technique to the n-type doping
N type gallium nitride layer.
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| EP2400563A2 (en) * | 2010-06-25 | 2011-12-28 | Invenlux Corporation | Light-emitting devices with improved active-region |
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| CN102299222A (en) * | 2010-06-25 | 2011-12-28 | 亚威朗(美国) | Light-emitting devices with improved active-region |
| CN101937953A (en) * | 2010-09-29 | 2011-01-05 | 苏州纳晶光电有限公司 | GaN-based light emitting diode and preparation method thereof |
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