CN112436082A - LED epitaxial structure for improving distribution uniformity of current carriers in luminous zone and growth method thereof - Google Patents

LED epitaxial structure for improving distribution uniformity of current carriers in luminous zone and growth method thereof Download PDF

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CN112436082A
CN112436082A CN202011198508.9A CN202011198508A CN112436082A CN 112436082 A CN112436082 A CN 112436082A CN 202011198508 A CN202011198508 A CN 202011198508A CN 112436082 A CN112436082 A CN 112436082A
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layer
gan
barrier
quantum well
torr
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程立文
林星宇
李侦伟
曾祥华
张嘉仪
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Yangzhou University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials

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Abstract

The invention discloses an LED epitaxial structure for improving the distribution uniformity of carriers In a light emitting region and a growth method thereof x Ga ‑x1An N barrier layer. According to the invention, the traditional GaN barrier is replaced by the gradual-change In component barrier, so that the photoelectric performance of the GaN-based LED is greatly improved, and the efficiency reduction of the GaN-based LED is effectively reduced.

Description

LED epitaxial structure for improving distribution uniformity of current carriers in luminous zone and growth method thereof
Technical Field
The invention relates to the field of LED design and application, in particular to an LED epitaxial growth method for improving the carrier transport and distribution of a light emitting region and a prepared epitaxial layer structure.
Background
Based on the characteristics of high performance, long service life, environmental protection and the like of the GaN-based LED, the GaN-based LED can replace the traditional incandescent lamp and fluorescent lamp in many aspects and become a new generation of energy-saving illumination light source. However, in response to the requirements of life and production, the GaN-based LED needs to operate under a large current, and since the efficiency of the GaN-based LED is attenuated with the increase of the operating current, the photoelectric performance of the GaN-based LED is obviously reduced when the GaN-based LED operates under the large current.
At present, auger recombination, Quantum Confinement Stark Effect (QCSE) caused by polarization effect, electron leakage, low mobility of holes and the like are proposed in the research aiming at efficiency attenuation at home and abroad to cause the efficiency attenuation, but no explanation is provided at present for the main reasons causing the efficiency attenuation. Therefore, an effective method for effectively improving the photoelectric performance of the GaN-based LED during high-current operation is to reduce the electron leakage of the active region and improve the injection of holes from the p side to the active region.
However, since holes have a relatively high effective mass and a relatively low mobility with respect to electrons, the number of holes injected from the p-side into the light-emitting layer is much smaller than that of electrons injected from the n-side, so that a phenomenon occurs in which a large number of carriers accumulate near the p-side and electrons leak to the p-side, non-radiative recombination occurs inside the p-type semiconductor, and eventually, the radiative recombination efficiency of holes and electrons in the active region is reduced, and the photoelectric performance of the LED is lowered. Therefore, there is a need for an ability to improve the transport and confinement of carriers through band engineering or structural design.
At present, the main method adopted at home and abroad is to increase the transport of carriers and the limiting capability of the carriers by growing an AlGaN electron blocking layer and the like between a light emitting layer and a p-type GaN layer, but larger polarization effect appears in the structure due to the difference of lattice coefficients of different materials. On the other hand, some band engineering has been performed by researchers, e.g. using In0.05Ga0.95The N-barrier layer may improve the optical performance of the GaN-based LED. The polarization effect between the barrier layer and the trap is reduced, and the effective radiation recombination rate of the carriers can be effectively improved. However, when In is used0.05Ga0.95In the case of N-barrier, the electron barrier between the last barrier and the electron blocking layer due to polarization effectThe promotion has limited electron leakage, while the main radiation recombination region of the carriers In the GaN-based LED is near the p side of the light emitting layer, therefore, In is adopted0.05Ga0.95N still does not meet the requirements of GaN-based LEDs under high current operation.
Disclosure of Invention
In order to effectively reduce the problem of efficiency reduction of the GaN-based LED, the invention provides an LED epitaxial structure with high carrier distribution uniformity in a light emitting region and a growth method thereof.
The technical solution for realizing the purpose of the invention is as follows: an LED epitaxial structure for improving the distribution uniformity of carriers In a light emitting region is provided, wherein the light emitting region is formed by alternately forming barrier layers and quantum well layers, and the barrier layers adopt In with In components gradually improved along the growth direction x Ga -x1An N barrier layer.
Preferably, the barrier layer is formed of In having an In composition gradually increased In the growth direction x Ga -x1The N barrier layer has seven layers, wherein the In components, namely x values are as follows In sequence: 0, 0 to 0.02 gradual change, 0.02 to 0.04 gradual change, 0.04 to 0.06 gradual change, 0.06 to 0.08 gradual change, 0.08 to 0.1 gradual change, 0.1.
Preferably, the thickness of each barrier layer is 8nm to 15 nm.
Preferably, the quantum well layer is In y Ga y1-An N quantum well layer is formed on the substrate,y0.1-0.3, each quantum well layer has a thickness of 2nm and the number of layers is 6.
Preferably, the sequence of the epitaxial structure from bottom to top is as follows: a substrate, a low-temperature nucleation layer GaN, an undoped u-GaN layer, a Si-doped n-GaN layer, In with gradually changed In component x Ga x1-A light emitting layer of the N barrier layer, an AlGaN electron blocking layer and a p-GaN layer.
A method for growing a light-emitting layer of an LED epitaxial structure for improving the distribution uniformity of carriers In the light-emitting region comprises replacing a conventional GaN barrier layer with a gradually-changed In layer with In component gradually increased along the growth direction x Ga -x1The N barrier layer comprises the following specific steps:
(1) the pressure in the reaction chamber is 100 Torr to 500 Torr, and the temperature isThe temperature is 700-800 ℃, and TEGa, TMIn and SiH are used4As MO source, In with gradually changed In composition is grown x Ga x1-An N barrier layer;
(2) the pressure of a reaction cavity is 100 Torr-500 Torr, the temperature is 700 ℃ -800 ℃, and TEGa, TMIn and SiH are used4As MO source, In doped with In is grown y Ga y1-An N quantum well layer is formed on the substrate,y0.1 to 0.3;
(3) alternately performing the step (1) and the step (2) to alternately grow In x Ga x1-N/In y Ga y1-And an N light emitting layer.
Preferably, In y Ga y1-The growth period of the N quantum well layer was 6.
Compared with the prior art, the GaN-based LED light source has the advantages that the traditional GaN barrier is replaced by the gradual-change In component barrier, so that the photoelectric performance of the GaN-based LED is greatly improved, and the efficiency reduction of the GaN-based LED is effectively reduced.
Drawings
Fig. 1 is an energy band diagram of a general GaN-based LED.
Fig. 2 is an energy band diagram of a GaN-based LED employing an InGaN barrier layer.
FIG. 3 is a band diagram of a GaN-based LED according to the present invention.
Fig. 4 is a schematic view of a manufacturing flow of the proposed epitaxial growth method of a GaN-based LED.
FIG. 5 shows In according to an embodiment of the present invention x Ga x1-N/In y Ga y1-The structure of the N light-emitting layer is shown schematically.
Detailed Description
The invention is further elucidated with reference to the figures and embodiments.
Fig. 1 is a band diagram of a general GaN-based LED, fig. 2 is a band diagram of a GaN-based LED using an InGaN barrier layer, and fig. 3 is a band diagram of a GaN-based LED according to the present invention.
As can be seen from fig. 1, fig. 2 and fig. 3, on one hand, inside the active region, along the growth direction of the device, since the content of In the barrier is higher and higher, the effective height of the barrier is gradually reduced, which is beneficial to the migration of high-quality holes from the P region to the quantum well, can improve the hole concentration of the quantum well region, and make the distribution of the holes In the active region more uniform; on the other hand, due to the application of the gradient In component barrier, the polarization electric field between the barrier and the InGaN quantum well is reduced due to the introduction of the In component, so that the radiation coincidence rate of carriers In an active region is improved; in addition, In the conduction band, the In component of the potential barrier close to the p-type GaN layer is high, the height difference between the last layer of potential barrier and the electron blocking layer is large, the electron blocking layer can more effectively block the leakage of electrons, and the probability of non-radiative coincidence of carriers is reduced; therefore, the photoelectric performance of the GaN-based LED is improved by adopting the gradual change In component potential barrier.
With reference to fig. 4, the method for growing the epitaxial structure of the GaN-based LED according to the present invention is as follows:
the invention uses VEECO MOCVD to grow the high-brightness GaN-based LED epitaxial wafer. Using high-purity H2Or high purity N2Or high purity H2And high purity N2As a carrier gas, high purity NH3（NH399.999%) as an N source, a metal-organic source of trimethyl gallium (TMGa) and a metal-organic source of triethyl gallium (TEGa), trimethyl indium (TMIn) as an indium source, and an N-type dopant of Silane (SiH)4) Trimethylaluminum (TMAl) as the aluminum source and magnesium diclomelate (CP) as the P-type dopant2Mg), the substrate is (0001) plane sapphire, the reaction pressure is between 100 Torr and 1000 Torr, and the specific growth process is as follows:
and annealing the sapphire substrate in a hydrogen atmosphere at 1050-1150 ℃, and cleaning the surface of the substrate.
Introducing ammonia gas and TMGa at the temperature of 500-610 ℃ and the pressure of a reaction cavity of 400-650 Torr, and growing a low-temperature nucleation layer GaN with the thickness of 20-40 nm on the sapphire substrate;
and keeping the pressure of the reaction cavity at 1050-1200 ℃ to be 100-500 Torr, introducing ammonia gas and TMGa, and continuously growing an undoped u-GaN layer with the thickness of 1-3 mu m on the low-temperature nucleation layer GaN.
Keeping the pressure of the reaction cavity at 1050-1200 ℃ to be 100-600 Torr, and introducing ammonia gas, TMGa and SiH4Continuously growing a Si-doped n-GaN layer with stable Si doping concentration and thickness of 2-4 μm on the undoped u-GaN layer, wherein the Si doping concentration is 8 multiplied by 1018 atoms/cm3~2×1019atoms/cm3。
The pressure of a reaction cavity is 100 Torr-500 Torr, the temperature is 700 ℃ -800 ℃, and TEGa, TMIn and SiH are used4Growing In with gradually changed In composition on the Si-doped n-GaN layer as MO source x Ga x1-N barrier layers, each of which has a thickness of 8-15 nm.
The pressure of a reaction cavity is 100 Torr-500 Torr, the temperature is 700 ℃ -800 ℃, and TEGa, TMIn and SiH are used4As MO source, In doped with In is grown y Ga y1-An N quantum well layer is formed on the substrate,y0.1-0.3, and the thickness of each quantum well layer is 2 nm;
alternatively growing In x Ga x1-N barrier layer and In y Ga y1-N quantum well layer until In is obtained as shown In FIG. 5 x Ga x1-N /In y Ga y1-And the N light-emitting layer controls the growth period of the quantum well layer to be 6.
Growing In with a graded In composition x Ga x1-In the case of the N barrier layer, the In composition, i.e., the value of x, gradually increases from the N side to the p side, and the following are provided In order: 0 (GaN material without In), 0 to 0.02 gradation, 0.02 to 0.04 gradation, 0.04 to 0.06 gradation, 0.06 to 0.08 gradation, 0.08 to 0.1 gradation, and 0.1, In that order, as shown In fig. 5, GaN barrier layer 61, In0~0.02Ga1~0.98 N barrier layer 62, In0.02~0.04Ga0.98~0.96N barrier layer 63, In0.04~0.06Ga0.96~0.94 N barrier layer 64, In0.06~0.08Ga0.94~0.92 N barrier layer 65, In0.08~0.1Ga0.92~0.90 N barrier layer 66 and In0.1Ga0.9 N barrier layer 67, In y Ga y1-The N quantum well layer is the quantum well layer 60 shown in fig. 5.
Keeping the pressure of the reaction cavity at 20-200 Torr and the temperature at 900-1100 ℃, introducing MO source TMA1, TMGa and CP2Mg In x Ga x1-N /In y Ga y1-Barrier layer In of N light-emitting layer0.1Ga0.9A P-type AlGaN layer (AlGaN electron blocking layer) with the thickness of 50 nm-200 nm continuously grows on the N barrier layer 67 for 3 min-100 min, the molar composition of Al is 10-30%, and the Mg doping concentration is 1 multiplied by 1018 atoms/cm3~1×1021 atoms/cm3。
Keeping the pressure of the reaction cavity at 100-500 Torr and the temperature at 850-1050 ℃, and introducing MO sources of TEGa and CP2Mg, continuously growing a P-type GaN contact layer (P-type GaN layer) doped with Mg with the thickness of 200 nm on the AlGaN electron barrier layer, wherein the Mg doping concentration is 1 multiplied by 1019 atoms/cm3~1×1022 atoms/cm3；
And after the epitaxial growth is finished, reducing the reaction temperature to 650-800 ℃, annealing for 5-10 min in a pure nitrogen atmosphere, and then reducing the temperature to room temperature to finish the growth.

Claims (6)

1. A light emitting layer of an LED epitaxial structure, characterized In that the light emitting layer is formed by alternating barrier layers and quantum well layers, wherein the barrier layers adopt In with an In composition gradually increasing along a growth directionxGa1-xAn N barrier layer.
2. The light-emitting layer according to claim 1, wherein the barrier layer uses In whose In composition gradually increases In the growth directionxGa1-xThe N barrier layer has seven layers, wherein the In components, namely x, are as follows In sequence: 0, 0 to 0.02 gradual change, 0.02 to 0.04 gradual change, 0.04 to 0.06 gradual change, 0.06 to 0.08 gradual change, 0.08 to 0.1 gradual change, 0.1.
3. The light-emitting layer of claim 1, wherein each barrier layer has a thickness of 8nm to 15 nm.
4. As in claimThe light-emitting layer according to claim 1, wherein the quantum well layer uses InyGa1-yThe quantum well layer thickness of each quantum well layer is 2nm, and the number of the quantum well layers is 6.
5. An LED epitaxial structure, characterized in that the epitaxial structure comprises a low-temperature nucleation layer GaN, an undoped u-GaN layer, a Si-doped n-GaN layer, the luminescent layer according to claims 1 to 4, an AlGaN electron blocking layer and a p-GaN layer in sequence from bottom to top.
6. A method for growing a light-emitting layer according to any one of claims 1 to 4, comprising the steps of:
(1) the pressure of a reaction cavity is 100 Torr-500 Torr, the temperature is 700 ℃ -800 ℃, and TEGa, TMIn and SiH are used4As MO source, In with gradually changed In composition is grownxGa1-xAn N barrier layer;
(2) the pressure of a reaction cavity is 100 Torr-500 Torr, the temperature is 700 ℃ -800 ℃, and TEGa, TMIn and SiH are used4As MO source, In doped with In is grownyGa1-yAn N quantum well layer, wherein y is 0.1-0.3;
(3) alternately performing the step (1) and the step (2) to alternately grow InxGa1-xN/InyGa1-yAnd an N light emitting layer.
CN202011198508.9A 2020-10-31 2020-10-31 LED epitaxial structure for improving distribution uniformity of current carriers in luminous zone and growth method thereof Pending CN112436082A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114038961A (en) * 2021-10-26 2022-02-11 重庆康佳光电技术研究院有限公司 Light emitting diode and display panel

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CN102545058A (en) * 2012-01-16 2012-07-04 苏州纳睿光电有限公司 Epitaxial structure of gallium nitride based laser device and manufacturing method of epitaxial structure
CN103746052A (en) * 2013-12-27 2014-04-23 太原理工大学 An InGaN-based multi-quantum well structure and a method for preparing the same
CN103915535A (en) * 2012-12-31 2014-07-09 比亚迪股份有限公司 Quantum well luminescent layer and formation method thereof
CN105355725A (en) * 2014-08-20 2016-02-24 中国科学院苏州纳米技术与纳米仿生研究所 Gallium nitride semiconductor light emitting diode provided with incline quantum barrier structure, and producing method thereof
CN105990477A (en) * 2015-02-09 2016-10-05 中国科学院苏州纳米技术与纳米仿生研究所 GaN-based semiconductor device with composite gradual-change quantum barrier structure and preparation method of semiconductor device

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Publication number Priority date Publication date Assignee Title
CN102545058A (en) * 2012-01-16 2012-07-04 苏州纳睿光电有限公司 Epitaxial structure of gallium nitride based laser device and manufacturing method of epitaxial structure
CN103915535A (en) * 2012-12-31 2014-07-09 比亚迪股份有限公司 Quantum well luminescent layer and formation method thereof
CN103746052A (en) * 2013-12-27 2014-04-23 太原理工大学 An InGaN-based multi-quantum well structure and a method for preparing the same
CN105355725A (en) * 2014-08-20 2016-02-24 中国科学院苏州纳米技术与纳米仿生研究所 Gallium nitride semiconductor light emitting diode provided with incline quantum barrier structure, and producing method thereof
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114038961A (en) * 2021-10-26 2022-02-11 重庆康佳光电技术研究院有限公司 Light emitting diode and display panel

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Application publication date: 20210302