CN114038961A - Light emitting diode and display panel - Google Patents
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- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical group [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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Abstract
The invention relates to a light emitting diode and a display panel, the light emitting diode at least comprises an N-type semiconductor layer, a P-type semiconductor layer and an active layer, the active layer is formed between the N-type semiconductor layer and the P-type semiconductor layer, the active layer comprises a plurality of quantum well layers and a plurality of barrier layers, each quantum well and each barrier layer are stacked alternately, at least one barrier layer is a variable barrier layer, the variable barrier layer is along the direction from the N-type semiconductor layer to the P-type semiconductor layer, and the partial or all barrier height of the variable barrier layer is changed from high to low. According to the invention, the variable barrier layer is arranged on the active layer, and the barrier height of the variable barrier layer is partially or completely changed from high to low along the direction from the N-type semiconductor layer to the P-type semiconductor layer, so that the electronic limiting capability of the active layer is enhanced, the recombination of electrons outside the active layer is reduced, the recombination probability of electrons and holes in the active region is increased, and the luminous efficiency is improved.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a light emitting diode and a display panel.
Background
Nowadays, the light emitting diode is widely applied, and is an electronic component which generates photons through radiation recombination of conduction band electrons and valence band holes in a semiconductor material and directly converts electric energy into light energy.
In some existing light emitting diodes, the effective mass of electrons is smaller than that of holes, but the mobility of electrons is greater than that of holes, so that electrons which are not limited in an active region can generate composite light emission outside the active region, and other band light sources are generated, thereby reducing the number of carriers in the active region, reducing the recombination probability of electrons and holes in the active region, and affecting the light emitting efficiency.
Therefore, how to enhance the ability of the active region to confine electrons and reduce the recombination of electrons outside the active region is a problem to be solved.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present application aims to provide a light emitting diode and a display panel, which are capable of enhancing the electron confinement capability of an active region, reducing the recombination of electrons outside the active region, and improving the light emitting efficiency.
A light emitting diode comprising at least:
an N-type semiconductor layer;
a P-type semiconductor layer; and
the active layer is formed between the N-type semiconductor layer and the P-type semiconductor layer and comprises a plurality of quantum well layers and a plurality of barrier layers, and each quantum well and each barrier layer are stacked alternately, wherein at least one barrier layer is a variable barrier layer, the variable barrier layer is arranged along the direction from the N-type semiconductor layer to the P-type semiconductor layer, and the barrier height of part or all of the variable barrier layer is changed from high to low.
The light-emitting diode is provided with the variable barrier layer on the active layer, and the barrier height of the variable barrier layer is partially or completely changed from high to low along the direction from the N-type semiconductor layer to the P-type semiconductor layer, so that the limiting capacity of the active layer on electrons is enhanced, the recombination of the electrons outside the active layer is reduced, the recombination probability of the electrons and holes in the active region is increased, and the light-emitting efficiency is improved.
Optionally, in the variable barrier layer, the highest barrier position of the variable barrier layer is closest to the N-type semiconductor layer. The limiting capability of the active layer to electrons is further enhanced, and the improvement of the luminous efficiency is facilitated.
Optionally, the variable barrier layer includes, sequentially arranged along a direction from the N-type semiconductor layer to the P-type semiconductor layer:
a barrier gradual change portion, wherein the barrier height of the barrier gradual change portion along the direction from the N-type semiconductor layer to the P-type semiconductor layer is changed from high to low; and
a barrier constant section whose barrier height is kept constant and whose barrier height is equal to the lowest barrier height of the gradation section.
The variable barrier layer is provided with the barrier gradual change part, so that the electron confinement capability is improved, and the variable barrier layer is provided with the barrier constant part, so that the barrier gradual change part only occupies a partial thickness area of the variable barrier layer, but not the whole thickness area, and the oxidation amount of components related to the electron confinement capability in the variable barrier layer is favorably reduced, and the stability of the variable barrier layer on the electron confinement capability is improved.
Optionally, at least one of the barrier layers is a constant barrier layer, the barrier height of the constant barrier layer is kept constant, and the average barrier height of the variable barrier layer is higher than the barrier height of the constant barrier layer.
Optionally, the active layer includes:
a first sub-active layer including a plurality of the quantum well layers and a plurality of the constant barrier layers alternately stacked;
and a second sub-active layer including a plurality of the quantum well layers and a plurality of the variable barrier layers alternately stacked.
Optionally, the constant barrier layer and the variable barrier layer are sequentially arranged along a direction from the N-type semiconductor layer to the P-type semiconductor layer, so that electrons pass through the first sub-active layer and the second sub-active layer during a process of moving from the N-type semiconductor layer to the P-type semiconductor layer, and are more favorable for limiting the electrons in the active layer.
Optionally, each variable barrier layer and each constant barrier layer are sequentially arranged along a direction from the N-type semiconductor layer to the P-type semiconductor layer.
Optionally, the quantum well layer of the second sub-active layer is thicker than the quantum well layer of the first sub-active layer. The moving path of electrons through the quantum well layer of the second sub active layer is increased, the recombination probability of the electrons and holes is improved, and the light emitting efficiency is improved.
Optionally, the quantum well layer thickness of the first sub-active layer ranges from 4nm to 6nm, and the quantum well thickness of the second sub-active layer ranges from 5nm to 7 nm.
Optionally, each variable barrier layer is located between two adjacent constant barrier layers along a direction from the N-type semiconductor layer to the P-type semiconductor layer.
Optionally, each constant barrier layer and each variable barrier layer are staggered along the direction from the N-type semiconductor layer to the P-type semiconductor layer.
Optionally, the barrier height of the constant barrier layer is equal to the lowest barrier height of the variable barrier layer.
Optionally, the barrier height of the constant barrier layer is higher than the lowest barrier height of the variable barrier layer and lower than the highest barrier height of the variable barrier layer.
Optionally, the thickness range of the barrier gradual change portion includes 2-4nm, and the thickness range of the barrier constant portion includes 1-3 nm.
Optionally, the quantum well layer is an aluminum-gallium-indium-phosphorus well layer, the barrier layer is an aluminum-gallium-indium-phosphorus barrier layer, and the proportion of the aluminum component in the barrier layer is higher than that of the aluminum component in the quantum well layer.
Optionally, the quantum well layer is (Al)AGa1-A)0.5In0.5A P well layer, wherein A is more than or equal to 0.2 and less than or equal to 0.3, and the barrier layer is (Al)BGa1-B)0.5In0.5And a P barrier layer, wherein B is more than or equal to 0.6 and less than or equal to 0.8.
Optionally, the N-type semiconductor layer includes an N-type waveguide layer and an N-type confinement layer, and the N-type confinement layer is formed on the N-type waveguide layer;
the P-type semiconductor layer comprises a P-type waveguide layer and a P-type limiting layer, and the P-type waveguide layer is formed on the P-type limiting layer;
wherein the active layer is formed between the N-type waveguide layer and the P-type waveguide layer.
Optionally, the light emitting diode further includes:
a substrate;
a buffer layer formed on the substrate;
the reflecting layer is formed on the buffer layer, and the N-type semiconductor layer is formed on the reflecting layer; and
and the current expansion layer is formed on the P-type semiconductor layer.
Optionally, the light emitting diode further includes:
a first electrode connected to the N-type semiconductor layer; and
and the second electrode is connected with the P-type semiconductor layer.
Based on the same concept, the present invention also provides a display panel, comprising:
a substrate;
and the light-emitting diode is arranged on the substrate, and the light-emitting diode is any one of the light-emitting diodes.
According to the display panel, any one of the light emitting diodes is arranged, the limiting capacity of the active layer on electrons can be enhanced, the recombination of the electrons outside the active layer is reduced, the recombination probability of the electrons and holes in the active region is increased, and the light emitting efficiency is improved.
Drawings
FIG. 1 is a schematic diagram of an exemplary LED of the present invention;
FIG. 2 is a schematic diagram of an exemplary structure of a first sub-active layer;
FIG. 3 is a schematic diagram of an exemplary structure of the second sub-active layer;
FIG. 4 is a schematic diagram of a partial barrier height profile of an exemplary LED;
FIG. 5 is a schematic diagram illustrating a partial barrier height profile of another exemplary LED;
FIG. 6 is a schematic diagram illustrating a partial barrier height profile of yet another exemplary LED;
FIG. 7 is a schematic diagram illustrating a partial barrier height profile of yet another exemplary LED;
FIG. 8 is a schematic diagram illustrating a partial barrier height profile of yet another exemplary LED;
FIG. 9 is a schematic diagram of a partial barrier height profile of another exemplary LED;
FIG. 10 is a schematic diagram illustrating a partial barrier height profile of yet another exemplary LED;
FIG. 11 is a diagram showing the barrier height distribution of the barrier layer in FIGS. 4-8;
fig. 12 shows another exemplary barrier height profile for a variable barrier layer.
Description of reference numerals:
100-a substrate; 200-a buffer layer; 300-a reflective layer;
a 400-N type semiconductor layer; 410-N type confinement layer; 420-N type waveguide layer,
500-an active layer; 510-a first sub-active layer; 511-a first quantum well layer; 512-constant barrier layer; 520-a second sub-active layer; 521-a second quantum well layer; 522-a variable barrier layer; 522 a-barrier transition; 522 b-barrier constant part;
a 600-P type semiconductor layer; 610-P type waveguide layer; 620-P type confinement layer;
700-a current spreading layer; 800-a first electrode; 900-second electrode.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
In the existing light emitting diode, the mobility of electrons is higher than that of holes, so that electrons which are not limited in an active region can generate composite light emission outside the active region, and other waveband light sources are generated, thereby reducing the number of carriers in the active region, reducing the recombination probability of electrons and holes in the active region, and influencing the light emitting efficiency.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
The application provides a light emitting diode, and this light emitting diode can be applied to display panel, and when this light emitting diode was applied to display panel, corresponding display panel included base plate and the light emitting diode of this application, and this light emitting diode sets up on the base plate.
Referring to fig. 1, the light emitting diode of the present application includes at least an N-type semiconductor layer 400, a P-type semiconductor layer 600, and an active layer 500, the active layer 500 is formed between the N-type semiconductor layer 400 and the P-type semiconductor layer 600, and referring to fig. 4 to 10, the active layer 500 includes a plurality of quantum well layers and a plurality of barrier layers, each quantum well and each barrier layer are alternately stacked, wherein at least one barrier layer is a variable barrier layer 522, and a barrier height of a part or all of the variable barrier layer 522 is changed from a high barrier height to a low barrier height along a direction from the N-type semiconductor layer 400 to the P-type semiconductor layer 600 of the variable barrier layer 522. In fig. 2-10, reference numerals 511 and 521 each point to a corresponding quantum well layer, and reference numerals 512 and 522 each point to a corresponding barrier layer.
In the light emitting diode, the variable barrier layer 522 is arranged on the active layer 500, and the barrier height of the variable barrier layer 522 is locally or completely changed from high to low along the direction from the N-type semiconductor layer 400 to the P-type semiconductor layer 600, so that electrons are more easily blocked in adjacent quantum wells by the variable barrier layer 522, which is beneficial to enhancing the limiting capability of the active layer 500 on the electrons, reducing the recombination of the electrons outside the active layer 500, increasing the recombination probability of the electrons and holes in an active region, and improving the light emitting efficiency.
In some embodiments, referring to fig. 12, in the variable barrier layer 522, the highest barrier of the variable barrier layer 522 is located at a middle portion of the variable barrier layer in a direction from the N-type semiconductor layer 400 to the P-type semiconductor layer 600.
In other embodiments, referring to fig. 4 to 11, in the variable barrier layer 522, the highest barrier position of the variable barrier layer 522 is closest to the N-type semiconductor layer, which is more favorable for blocking electrons in the adjacent quantum well by the variable barrier layer 522, and is favorable for further improving the light emitting efficiency.
For convenience of understanding, the following embodiments are described by taking a red light diode as an example, in which a light emitting diode includes a quantum well layer that is an aluminum gallium indium phosphide layer (AlGaInP well layer), and a barrier layer that is an aluminum gallium indium phosphide barrier layer (AlGaInP barrier layer).
In some embodiments, the ratio of the aluminum component in the barrier layer is higher than the ratio of the aluminum component in the quantum well layer such that the barrier layer has a higher confinement capability for electrons than the quantum well layer. For example, the quantum well layer may be (Al)AGa1-A)0.5In0.5A P well layer, wherein A is more than or equal to 0.2 and less than or equal to 0.3, and the barrier layer can be (Al)BGa1-B)0.5In0.5And a P barrier layer, wherein B is more than or equal to 0.6 and less than or equal to 0.8. In the above and following embodiments, the barrier layer and the quantum well layer are described by taking an aluminide as an example; in practice, the main components influencing the barrier are different for different colors or types of light emitting diodes, and therefore, the barrier layer and the quantum well layer are not limited to aluminides, and corresponding magnesium compounds or other types of compounds can be used.
In some embodiments, referring to fig. 9 and 10, the barrier height of the variable barrier layer 522 is changed from high to low in a direction from the N-type semiconductor layer 400 to the P-type semiconductor layer 600, that is, the barrier height of the variable barrier layer 522 is all changed in a manner of being changed from high to low.
In other embodiments, referring to fig. 4 to 8, the variable barrier layer 522 includes a barrier gradual change portion 522a and a barrier constant portion 522b sequentially disposed in a direction from the N-type semiconductor layer 400 to the P-type semiconductor layer 600, the barrier height of the barrier gradual change portion 522a is changed from a high to a low, the barrier height of the barrier constant portion 522b is kept constant, and the barrier height of the barrier constant portion 522b is equal to the lowest barrier height of the barrier gradual change portion 522 a. That is, in the variable barrier layer 522, the barrier height of the variable barrier layer 522 is changed from high to low and then remains unchanged in the direction from the N-type semiconductor layer 400 to the P-type semiconductor layer 600, and the barrier height of the variable barrier layer 522 is locally changed from high to low.
In this way, the barrier gradual change portion 522a does not occupy the entire variable barrier layer 522, which is beneficial to reducing the oxidized amount of the components related to the electron confinement capability in the variable barrier layer 522, and is also beneficial to improving the stability of the variable barrier layer 522 to the electron confinement capability.
For example, when the variable barrier layer 522 is an AlGaInP barrier layer, the greater the content of the aluminum component in the variable barrier layer 522, the stronger the electron confinement ability is, but if the aluminum component is oxidized, the enhancement of the electron confinement ability is weakened to some extent, because the barrier height of the barrier gradual change portion 522a is higher than the barrier of other non-gradual change portions (including the barrier constant portion 522b and other types of barrier layers), that is, the content of the aluminum component in the barrier gradual change portion is higher, the barrier gradual change portion 522a is more easily oxidized than other non-gradual change portions, that is, the barrier of the barrier gradual change portion 522a is not as high as possible, the higher barrier is more easily oxidized, and the too high barrier may affect the stability of the electron confinement ability of the active layer. Here, only a partial region of the barrier layer 522 is the barrier gradual change portion 522a, so that the thickness occupied by the barrier gradual change portion 522a can be smaller, which is beneficial to reducing the amount of oxidized aluminum, and is also beneficial to improving the stability of the active layer on the electron confinement capability.
In some embodiments, the thickness of the barrier graded portion 522a includes 2-4nm and the thickness of the barrier constant portion 522b includes 1-3 nm.
In some embodiments, the thickness of the barrier graded portion 522a is thicker than the thickness of the barrier constant portion 522b, which is beneficial to ensure that the graded layer 522 has sufficient electron confinement capability.
In some embodiments, referring to fig. 4-10, at least one of the barrier layers is the constant barrier layer 512, the barrier height of the constant barrier layer 512 is kept constant, and the average barrier height of the variable barrier layer 522 is higher than the barrier height of the constant barrier layer 512.
In some embodiments, referring to fig. 1-5, and 8-10 in combination, the active layer 500 includes:
a first sub-active layer 510 including a plurality of quantum well layers and a plurality of constant barrier layers 512 alternately stacked;
and a second sub-active layer 520 including a plurality of quantum well layers and a plurality of variable barrier layers 522 alternately stacked.
In some embodiments, referring to fig. 8, each variable barrier layer 522 and each constant barrier layer 512 are sequentially disposed along the direction from the N-type semiconductor layer 400 to the P-type semiconductor layer 600. In other embodiments, referring to fig. 4, 5, 9, and 10, the constant barrier layer 512 and the variable barrier layer 522 are sequentially disposed along a direction from the N-type semiconductor layer 400 to the P-type semiconductor layer 600, so that electrons pass through the first sub-active layer 510 and the second sub-active layer 520 during a process of moving from the N-type semiconductor layer 400 to the P-type semiconductor layer 600, which is more beneficial to confining electrons in the active layer.
In some embodiments, the quantum well layer of the second sub-active layer 520 is thicker than the quantum well layer of the first sub-active layer 510. The moving path of electrons through the quantum well layer of the second sub active layer 520 is increased, which is beneficial to improving the recombination probability of electrons and holes, and is further beneficial to improving the light emitting efficiency.
In some embodiments, the quantum well layer thickness of the first sub-active layer 510 ranges from 4 to 6nm, and the quantum well thickness of the second sub-active layer 520 ranges from 5 to 7 nm.
If the quantum well layer of the first sub-active layer 510 is defined as the first quantum well layer 511 and the quantum well layer of the second sub-active layer 520 is defined as the second quantum well layer 521, that is, the thickness 522 of the second quantum well layer is thicker than that of the first quantum well layer 511. For example, the thickness of the first quantum well layer 511 may be 5nm, and the thickness of the second quantum well layer 521 may be 6 nm.
In implementations, the constant barrier layer 512 and the variable barrier layer 522 may be arranged in other sequences or manners. For example, referring to fig. 6, each variable barrier layer 522 is located between two adjacent constant barrier layers 512 along the direction from the N-type semiconductor layer 400 to the P-type semiconductor layer 600; for another example, referring to fig. 7, the constant barrier layers 512 and the variable barrier layers 522 are interleaved in a direction from the N-type semiconductor layer 400 to the P-type semiconductor layer 600. Of course, in an implementation (not shown), the barrier layer in the active layer 500 may also include only the variable barrier layer 522 without the constant barrier layer 512.
In some embodiments, referring to fig. 5, 10, the barrier height of the constant barrier layer 512 is higher than the lowest barrier height of the variable barrier layer 522 and lower than the highest barrier height of the variable barrier layer 522. In other embodiments, referring to fig. 4, 6-9, the barrier height of the constant barrier layer 512 is equal to the lowest barrier height of the variable barrier layer 522, which is beneficial to keep the wavelength of the led within a stable range when the variable barrier layer 522 is provided.
In some embodiments, referring to fig. 1-3 in combination, the N-type semiconductor layer 400 includes an N-type waveguide layer 420 and an N-type confinement layer 410, the N-type confinement layer 410 being formed on the N-type waveguide layer 420; referring to fig. 3, the P-type semiconductor layer 600 includes a P-type waveguide layer 610 and a P-type confinement layer 620, the P-type waveguide layer 610 being formed on the P-type confinement layer 620; the active layer 500 is formed between the N-type waveguide layer 420 and the P-type waveguide layer 610. The N-type waveguide layer 420 can be an N-type waveguide layer, the N-type confinement layer 410 can be an N-type confinement layer, the P-type waveguide layer 610 can be a P-type waveguide layer, and the P-type confinement layer 620 can be a P-type confinement layer.
In some embodiments, referring to fig. 1, the light emitting diode further includes a substrate 100, a buffer layer 200 formed on the substrate 100, a reflective layer 300 formed on the buffer layer 200, and a current spreading layer 700 formed on the P-type semiconductor layer 600, and an N-type semiconductor layer 400 formed on the reflective layer 300.
In some embodiments, referring to fig. 1, the light emitting diode further includes a first electrode 800 connected to the N-type semiconductor layer 400 and a second electrode 900 connected to the P-type semiconductor layer 600. In fig. 1, a first electrode 800 is formed on a current spreading layer 700, and a second electrode 900 is connected to a P-type semiconductor layer 600 by being connected to a substrate 100.
For ease of understanding, in one embodiment, referring to fig. 1, the light emitting diode includes:
a substrate 100, the substrate 100 being a GaAs substrate;
a buffer layer 200 formed on the substrate 100, the buffer layer 200 being a GaAs buffer layer with a thickness of 0.4-0.6 μm;
a reflective layer 300 formed on the buffer layer 200, the reflective layer 300 being an AlGaAa/AlAs DBR reflective layer having a thickness of 2.0-4.0 μm;
an N-type confinement layer 410 formed on the reflective layer 300, wherein the N-type confinement layer 410 is an N-AlInP confinement layer and has a thickness of 0.25-0.45 μm;
an N-type waveguide layer 420 formed on the N-type confinement layer 410, the N-type waveguide layer 420 being an N-AlGaInP waveguide layer with a thickness of 0.06-0.1 μm;
an active layer 500 formed on the N-type waveguide layer 420;
a P-type waveguide layer 610 formed on the active layer 500, the P-type waveguide layer 610 being a P-AlGaInP waveguide layer with a thickness of 0.07-0.1 μm;
a P-type confinement layer 620 formed on the P-type waveguide layer 610, wherein the P-type waveguide layer 610 is a P-AlInP confinement layer with a thickness of 0.3-1 μm;
and a current spreading layer 700 formed on the P-type confinement layer 620, wherein the current spreading layer 700 is a P-GaP current spreading layer with a thickness of 5-6 μm.
The active layer 500 includes a plurality of quantum well layers and a plurality of barrier layers, which are alternately stacked, referring to fig. 1, and the active layer 500 may also be divided into a first sub-active layer 510 and a second sub-active layer 520, referring to fig. 2 in combination, wherein the first sub-active layer 510 includes 18 first quantum well layers 511 and 17 constant barrier layers 512, referring to fig. 3 in combination, and the second sub-active layer 520 includes 5 second quantum well layers 521 and 5 variable barrier layers 522; the first sub-active layer 510 is formed on the N-type waveguide layer 420, and the P-type waveguide layer 610 is formed on the second sub-active layer 520. The thickness of each first quantum well layer 511 is 5nm, and the thickness of each second quantum well layer 521 is 6 nm; the thickness of the single constant barrier layer 512 and the single variable barrier layer 522 are both 5nm, that is, the thickness of the first sub-active layer 510 is 175nm, and the thickness of the second sub-active layer 520 is 55 nm.
Wherein the first quantum well layer 511 and the second quantum well layer 521 are both (Al)AGa1-A)0.5In0.5A P well layer, wherein A is more than or equal to 0.2 and less than or equal to 0.3; the constant barrier layer 512 and the variable barrier layer 522 are both (Al)BGa1-B)0.5In0.5P layer, B is more than or equal to 0.6 and less than or equal to 0.8, see the combined figure 4-11, each layerThe variable barrier layer 522 includes a barrier gradual change portion 522a and a barrier constant portion 522b sequentially formed in a direction from the N-type waveguide layer 420 to the P-type waveguide layer 610, the barrier height of the barrier gradual change portion 522a is from high to low, the barrier gradual change portion 522a has a thickness of 3nm, the barrier height of the barrier constant portion 522b is equal to the lowest barrier height of the barrier gradual change portion 522a, and the barrier constant portion 522b has a thickness of 2 nm.
Accordingly, the light emitting diode can be grown on the substrate 100 by Metal-Organic Chemical vapor Deposition (MOVCD), and the whole manufacturing process can include the following steps;
growing the buffer layer 200 on the substrate 100;
growing the reflective layer 300 on the buffer layer 200, specifically, the reflective layer 300 includes a first reflective layer (AlAs) and a second reflective layer (AlGaAa) alternately arranged, the reflectivity of the first reflective layer is less than that of the second reflective layer, when the reflective layer 300 is grown, the growth is started with one reflective layer (AlAs), and the growth is ended with the first reflective layer (AlAs);
growing the N-type confinement layer 410 on the reflective layer 300;
growing the N-type waveguide layer 420 on the N-type confinement layer 410;
the active layer 500 is grown on the N-type waveguide layer 420, specifically, the active layer 500 is formed by alternately growing a plurality of quantum well layers and barrier layers, when the active layer 500 grows, a first sub-active layer 510 is grown on the N-type waveguide layer 420 and then a second sub-active layer 520 is grown on the first sub-active layer 510, the first sub-active layer 510 and the second sub-active layer 520 both comprise a plurality of alternating quantum well layers and barrier layers, the growth pressure for growing the first sub-active layer 510 and the second sub-active layer 520 is 45-65mbar, and the growth temperature is 650-750 ℃;
growing the P-type waveguide layer 610 on the active layer 500;
growing the P-type confinement layer 620 on the P-type waveguide layer 610;
the current spreading layer 700 is grown on the P-type confinement layer 620.
Of course, before growing buffer layer 200, substrate 100 needs to be cleaned or purged, e.g., substrate 100 may be purged with H2; meanwhile, the temperature of the reaction chamber needs to be regulated to 650-750 ℃, which is beneficial to removing the water vapor in the reaction chamber under the high-temperature environment.
Wherein, when the first sub-active layer 510 and the second sub-active layer 520 are grown, the flow of trimethylaluminum (TMAl) and trimethylgallium (TMGa) into the reaction chamber is controlled by the MFC, and the PH is controlled3And the input amount of TMIn, the ratio of the aluminum component to the gallium component in each quantum well layer and barrier layer of the active layer 500 can be controlled, and the variation control of the barrier height in each quantum well layer and barrier layer is realized. When the first quantum well layer 511 and the constant barrier layer 512 of the first sub-active layer 510 are grown, the flow rates of the introduced TMAl are respectively corresponding constant values; during the growth of the second quantum well layer 521 of the second sub-active layer 520, the flow rate of the TMAl passing through is also a corresponding fixed value, but during the growth of the variable barrier layer 522 of the second sub-active layer 520, the flow rate of the TMAl passing through needs to be gradually reduced and then kept constant, B is a variable value, and the flow rate of the TMGa gradually increases and then kept constant, so as to form the variable barrier layer 522.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A light emitting diode, comprising at least:
an N-type semiconductor layer;
a P-type semiconductor layer; and
the active layer is formed between the N-type semiconductor layer and the P-type semiconductor layer and comprises a plurality of quantum well layers and a plurality of barrier layers, and each quantum well and each barrier layer are stacked alternately, wherein at least one barrier layer is a variable barrier layer, the variable barrier layer is arranged along the direction from the N-type semiconductor layer to the P-type semiconductor layer, and the barrier height of part or all of the variable barrier layer is changed from high to low.
2. The led of claim 1, wherein: in the variable barrier layer, the highest barrier position of the variable barrier layer is closest to the N-type semiconductor layer.
3. The led of claim 2, wherein: the variable barrier layer comprises the following components arranged in sequence along the direction from the N-type semiconductor layer to the P-type semiconductor layer:
a barrier gradual change portion, wherein the barrier height of the barrier gradual change portion along the direction from the N-type semiconductor layer to the P-type semiconductor layer is changed from high to low; and
barrier constant part: the barrier height of the barrier constant portion is kept constant, and the barrier height of the barrier constant portion is equal to the lowest barrier height of the gradation portion.
4. The led of claim 2, wherein: at least one of the barrier layers is a constant barrier layer, the barrier height of the constant barrier layer is kept constant, and the average barrier height of the variable barrier layer is higher than that of the constant barrier layer.
5. The light-emitting diode according to claim 4, wherein the active layer comprises:
a first sub-active layer including a plurality of the quantum well layers and a plurality of the constant barrier layers alternately stacked;
and a second sub-active layer including a plurality of the quantum well layers and a plurality of the variable barrier layers alternately stacked.
6. The light-emitting diode according to claim 5, wherein: the constant barrier layer and the variable barrier layer are sequentially arranged along the direction from the N-type semiconductor layer to the P-type semiconductor layer.
7. The light-emitting diode according to claim 5, wherein: the quantum well layer of the second sub-active layer is thicker than the quantum well layer of the first sub-active layer.
8. The light-emitting diode according to claim 4, wherein: the barrier height of the constant barrier layer is equal to the lowest barrier height of the variable barrier layer.
9. The light-emitting diode according to any one of claims 1 to 8, wherein:
the N-type semiconductor layer comprises an N-type waveguide layer and an N-type limiting layer, and the N-type limiting layer is formed on the N-type waveguide layer;
the P-type semiconductor layer comprises a P-type waveguide layer and a P-type limiting layer, and the P-type waveguide layer is formed on the P-type limiting layer;
wherein the active layer is formed between the N-type waveguide layer and the P-type waveguide layer.
10. A display panel, comprising:
a substrate;
a light emitting diode disposed on the substrate, the light emitting diode being as claimed in any one of claims 1 to 9.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080315180A1 (en) * | 2007-06-25 | 2008-12-25 | Kyung Jun Kim | Semiconductor light emitting device |
| CN102299223A (en) * | 2011-09-19 | 2011-12-28 | 厦门乾照光电股份有限公司 | Epitaxial structure of light-emitting diode and manufacturing method thereof |
| CN103489973A (en) * | 2012-06-13 | 2014-01-01 | 隆达电子股份有限公司 | Semiconductor light emitting structure |
| US20140008607A1 (en) * | 2012-07-03 | 2014-01-09 | Invensas Corporation | Quantum efficiency of multiple quantum wells |
| CN103650173A (en) * | 2011-07-29 | 2014-03-19 | 三星电子株式会社 | Semiconductor light-emitting device |
| CN105355725A (en) * | 2014-08-20 | 2016-02-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gallium nitride semiconductor light emitting diode provided with incline quantum barrier structure, and producing method thereof |
| CN105374912A (en) * | 2015-10-28 | 2016-03-02 | 厦门市三安光电科技有限公司 | LED and preparation method thereof |
| CN211455712U (en) * | 2019-09-25 | 2020-09-08 | 南昌凯迅光电有限公司 | Epitaxial structure for improving LED brightness |
| CN112436082A (en) * | 2020-10-31 | 2021-03-02 | 扬州大学 | LED epitaxial structure for improving distribution uniformity of current carriers in luminous zone and growth method thereof |
-
2021
- 2021-10-26 CN CN202111250697.4A patent/CN114038961B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080315180A1 (en) * | 2007-06-25 | 2008-12-25 | Kyung Jun Kim | Semiconductor light emitting device |
| CN103650173A (en) * | 2011-07-29 | 2014-03-19 | 三星电子株式会社 | Semiconductor light-emitting device |
| CN102299223A (en) * | 2011-09-19 | 2011-12-28 | 厦门乾照光电股份有限公司 | Epitaxial structure of light-emitting diode and manufacturing method thereof |
| CN103489973A (en) * | 2012-06-13 | 2014-01-01 | 隆达电子股份有限公司 | Semiconductor light emitting structure |
| US20140008607A1 (en) * | 2012-07-03 | 2014-01-09 | Invensas Corporation | Quantum efficiency of multiple quantum wells |
| CN105355725A (en) * | 2014-08-20 | 2016-02-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gallium nitride semiconductor light emitting diode provided with incline quantum barrier structure, and producing method thereof |
| CN105374912A (en) * | 2015-10-28 | 2016-03-02 | 厦门市三安光电科技有限公司 | LED and preparation method thereof |
| CN211455712U (en) * | 2019-09-25 | 2020-09-08 | 南昌凯迅光电有限公司 | Epitaxial structure for improving LED brightness |
| CN112436082A (en) * | 2020-10-31 | 2021-03-02 | 扬州大学 | LED epitaxial structure for improving distribution uniformity of current carriers in luminous zone and growth method thereof |
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