CN106784181B - Method and structure for improving luminous efficiency of green light or longer wavelength InGaN quantum well - Google Patents

Method and structure for improving luminous efficiency of green light or longer wavelength InGaN quantum well Download PDF

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CN106784181B
CN106784181B CN201611153017.6A CN201611153017A CN106784181B CN 106784181 B CN106784181 B CN 106784181B CN 201611153017 A CN201611153017 A CN 201611153017A CN 106784181 B CN106784181 B CN 106784181B
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quantum well
ingan quantum
longer wavelength
atomic
substrate
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CN106784181A (en
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田爱琴
刘建平
张书明
李德尧
张立群
杨辉
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

The invention discloses a method and a structure for improving the luminous efficiency of a green light or longer wavelength InGaN quantum well. The method comprises the following steps: adopting a substrate with atomic steps, wherein the chamfer angle formed by adjacent atomic steps on the substrate is more than 0.2 degrees; forming a buffer layer on the atomic step surface; forming a high-temperature n-type GaN layer on the buffer layer; an InGaN quantum well is formed on the high temperature n-type GaN layer. The method for improving the light emitting efficiency of the InGaN quantum well by adopting the substrate with the large chamfer angle adopts the substrate with the chamfer angle larger than 0.2 degrees to grow the active region of the green light or longer wavelength InGaN quantum well, can realize the atomic step flow growth of the green light or longer wavelength InGaN quantum well, improve the appearance of the atomic step flow growth, and improve the internal quantum efficiency of the InGaN quantum well. In addition, the InGaN quantum well prepared by the method can be widely applied to GaN-based green light or longer-wavelength LEDs and GaN-based green light or longer-wavelength lasers, and can also be widely applied to multi-quantum well solar cells.

Description

Method and structure for improving luminous efficiency of green light or longer wavelength InGaN quantum well
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a method and a structure for improving the luminous efficiency of a green light or longer wavelength InGaN quantum well.
Background
GaN-based green or longer wavelength lasers and LEDs have very wide application in semiconductor display and lighting. The InGaN quantum well active region is used as a core structure of a GaN-based laser and an LED, and the growth behavior and the appearance of the InGaN quantum well active region have very important influence on the optical properties of the InGaN quantum well and the performance of a device.
Since the equilibrium vapor pressure of InN is very high and the In-N bond energy is weak, the decomposition temperature of InN is low. Therefore, InGaN of high In composition must be grown at low temperature to ensure sufficient In incorporation into the epitaxial layer. The temperature for growing InGaN by MOCVD is generally between 650 ℃ and 750 ℃. But generally at lower growth temperatures, the mobility of surface atoms is low and the migration distance is short. For green or longer wavelength InGaN quantum wells, lower temperatures and higher In/Ga ratios are required when grown using MOCVD because the InGaN quantum well layers have higher In composition to achieve long wavelength emission. When the substrate with a small chamfer angle is subjected to epitaxial growth, due to the large width of the atomic step, atoms falling on the surface of the sample cannot migrate to the position where the edge of the atomic step is suitable for merging, but directly nucleates on the surface of the atomic step, and in this case, the AFM appearance of InGaN is generally a two-dimensional island appearance distributed along the atomic step. The quantum barrier layer is grown on the shape of the two-dimensional island, so that the surface between the InGaN quantum well and the quantum barrier layer is rough, and the optical performance of the InGaN quantum well active region is further influenced.
Disclosure of Invention
In order to solve the problems in the prior art, the present invention aims to provide a method for improving the light emitting efficiency of an InGaN quantum well with green light or longer wavelength, so as to obtain an InGaN quantum well which grows in an atomic step flow and has high internal quantum efficiency.
The invention provides a method for improving the luminous efficiency of a green light or longer wavelength InGaN quantum well, which comprises the following steps:
adopting a substrate with atomic steps, wherein the chamfer angle formed by adjacent atomic steps on the substrate is more than 0.2 degrees;
forming a buffer layer on the atomic step surface;
forming a high-temperature n-type GaN layer on the buffer layer;
an InGaN quantum well is formed on the high temperature n-type GaN layer.
Further, the chamfer angles formed by every two adjacent atomic steps are equal; and/or the chamfer angle formed by adjacent atomic steps on the substrate is 0.2-15 degrees.
Further, the buffer layer is a low-temperature undoped GaN layer, and the thickness of the low-temperature undoped GaN layer is 10 nm-30 nm.
Further, the thickness of the high-temperature n-type GaN layer is less than 5000 nm.
Further, the electron concentration of the high-temperature n-type GaN layer is 1017cm-3To 1019cm-3In the meantime.
Further, the green or longer wavelength InGaN quantum wells are undoped InxGa1-xAnd an N quantum well.
Further, the InxGa1-xThe thickness of the N quantum well is 1 nm-5 nm, and the InxGa1-xThe In composition of the N quantum well increases with increasing emission wavelength of the InGaN quantum well.
Furthermore, the InGaN quantum well formed on each atomic step is in an atomic step flow shape.
Further, the height of the atomic step of the InGaN quantum well is equal to the height of the adjacent higher atomic step.
The invention also provides a structure for improving the luminous efficiency of the InGaN quantum well with green light or longer wavelength by using the method, which comprises the following steps: a substrate having atomic steps, and a chamfer angle formed by adjacent atomic steps is greater than 0.2 °; a buffer layer formed on the atomic step surface; a high temperature n-type GaN layer formed on the buffer layer; and the InGaN quantum well is formed on the high-temperature n-type GaN layer.
The invention has the beneficial effects that: the method for improving the luminous efficiency of the green light or longer wavelength InGaN quantum well adopts the substrate with the oblique angle larger than 0.2 degrees to grow the active region of the green light or longer wavelength InGaN quantum well, can realize the atomic step flow growth of the green light or longer wavelength InGaN quantum well, improve the appearance of the atomic step flow growth, and improve the internal quantum efficiency of the InGaN quantum well. In addition, the InGaN quantum well prepared by the method can be widely applied to GaN-based green light or longer-wavelength LEDs and GaN-based green light or longer-wavelength lasers, and can also be widely applied to multi-quantum well solar cells.
Drawings
The above and other aspects, features and advantages of embodiments of the present invention will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:
fig. 1 is a flow chart of the steps of a method of improving the luminous efficiency of a green or longer wavelength InGaN quantum well in accordance with an embodiment of the present invention;
fig. 2 is a schematic material structure diagram of a green or longer wavelength InGaN quantum well structure fabricated by a method of an embodiment of the invention;
fig. 3 is a perspective view of a green or longer wavelength InGaN quantum well structure prepared by a method of an embodiment of the invention;
FIG. 4 is a schematic illustration of a chamfer angle versus atomic step width for a substrate in accordance with an embodiment of the present invention;
FIG. 5(a) is an AFM profile of green InGaN quantum wells formed on a GaN substrate with a miscut angle of 0.2 °;
FIG. 5(b) is an AFM profile of green InGaN quantum wells formed on a GaN substrate with a miscut angle of 0.54 °;
FIG. 5(c) is an AFM profile of green InGaN quantum wells formed on a GaN substrate with a miscut angle of 0.6 °;
fig. 6(a) is a graph of temperature-shifted PL test results for green InGaN quantum wells formed on a GaN substrate with a miscut angle of 0.2 °;
fig. 6(b) is a graph of temperature-shifted PL test results for green InGaN quantum wells formed on a GaN substrate with a miscut angle of 0.56 °.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided to explain the principles of the invention and its practical application so that others skilled in the art will be able to understand the invention for various embodiments and with various modifications as are suited to the particular use contemplated. Like reference numerals may be used to refer to like elements throughout the specification and drawings.
In the drawings, the thickness of layers and regions are exaggerated for clarity of illustration. Moreover, like reference numerals may be used to refer to like elements throughout the specification and drawings.
Fig. 1 is a flow chart of the steps of a method of improving the luminous efficiency of green or longer wavelength InGaN quantum wells in accordance with an embodiment of the present invention.
Referring to fig. 1, an embodiment of the present invention provides a method for improving the light emitting efficiency of a green or longer wavelength InGaN quantum well, which includes the following steps:
step S1: adopting a substrate with atomic steps, wherein the chamfer angle formed by adjacent atomic steps on the substrate is more than 0.2 degrees;
step S2: forming a buffer layer on the atomic step surface;
step S3: forming a high-temperature n-type GaN layer on the buffer layer;
step S4: an InGaN quantum well is formed on the high temperature n-type GaN layer.
Fig. 2 is a schematic material structure diagram of an InGaN quantum well structure prepared by the method of the embodiment of the present invention. Fig. 3 is a perspective view of an InGaN quantum well structure fabricated by a method of an embodiment of the invention.
Referring to fig. 2 and 3, the structure for improving the light emitting efficiency of the InGaN quantum well for green or longer wavelengths, herein, simply referred to as InGaN quantum well structure, as shown in fig. 2 and 3 is prepared using the above method. The InGaN quantum well structure comprises a substrate 1, a buffer layer 2, a high-temperature n-type GaN layer 3 and an InGaN quantum well 4. Wherein the substrate 1 has atomic steps, and a chamfer angle formed by adjacent atomic steps is larger than 0.2 deg. The buffer layer 2 is formed on the atomic step surface. A high temperature n-type GaN layer 3 is formed on the buffer layer 2. An InGaN quantum well 4 is formed on the high temperature n-type GaN layer 3.
In connection with step S1, substrate 1 may be a GaN substrate, or may be a sapphire substrate, or a SiC substrate, or a Si substrate. The invention is not limited thereto.
FIG. 4 is a schematic illustration of a chamfer angle versus atomic step width for a substrate in accordance with an embodiment of the present invention.
The present invention is directed to a method for growing high In composition green or longer wavelength InGaN quantum wells 4 at low temperature by reducing the width of the surface atomic steps of the substrate 1, and growing the high In composition green or longer wavelength InGaN quantum wells 4 at low temperature, where atoms can migrate to the atomic step edge and merge, and grow In an atomic step flow growth mode, to obtain good surface morphology and crystal quality, as shown In fig. 4, fig. 4 is a schematic diagram of the relation between the chamfer angle and the atomic step width, assuming that the slope between two adjacent atomic steps of the substrate 1 is the chamfer angle α, the height of the atomic step is h, and Lt is the atomic step width, tan α is h/Lt, i.e., Lt is h/tan α.
Preferably, in this embodiment, the atomic steps are regularly increasing steps, and the chamfer angle α formed by each two adjacent atomic steps is equal.
In connection with steps S2, S3, and S4, the growth method of the buffer layer 2, the high temperature n-type GaN layer 3, and the InGaN quantum well 4 may be MOCVD or MBE. MOCVD refers to a novel vapor phase epitaxial growth technique developed on the basis of vapor phase epitaxial growth (VPE). MBE refers to a crystal growth technique of molecular beam epitaxy. The invention is not so limited.
Specifically, in conjunction with step S2, buffer layer 2 is formed on the atomic step surface of substrate 1, and buffer layer 2 is specifically a low-temperature undoped GaN layer. Specifically, the thickness of the low-temperature undoped GaN layer is 10nm to 30 nm.
In conjunction with step S3, a high temperature n-type GaN layer 3 is formed on the buffer layer 2 with a thickness of less than 5000nm and an electron concentration of 1017cm-3To 1019cm-3In the meantime.
In the present embodiment, the low-temperature undoped GaN layer (buffer layer 2) and the high-temperature n-type GaN layer 3 are sequentially formed on the upper surface of the atomic step, i.e., the surface having an atomic step width Lt (as shown in fig. 4).
In conjunction with step S4, the InGaN quantum well 4 is undoped InxGa1-xAnd an N quantum well. InxGa1-xThe thickness of the N quantum well is between 1nm and 5nm, the In component of the N quantum well increases along with the increase of the light emitting wavelength of the InGaN quantum well, for example, the In component In the InGaN quantum well with the light emitting wavelength of 520nm is about 25%, and the In component In the InGaN quantum well with the longer light emitting wavelength is higher.
As can be seen from fig. 3, the InGaN quantum wells 4 on each step are in an atomic step flow shape, and the InGaN quantum wells 4 on each step are just full of the atomic step. Or the InGaN quantum wells 4 are distributed on the outer edge of the horizontal step surface of the atomic step. More specifically, the InGaN quantum wells 4 are flush with the upper surfaces of their adjacent high-order atomic steps, or they are located at the same height (same level).
According to the method for improving the light emitting efficiency of the InGaN quantum well by adopting the substrate with the large oblique angle, the substrate 1 with the large oblique angle is adopted to sequentially grow the buffer layer 2, the high-temperature n-type GaN layer 3 and the InGaN quantum well 4, because the width of the atomic step of the substrate 1 is narrow, when the InGaN quantum well 4 with green light or longer wavelength is grown at a specific growth rate at a specific temperature, the migration distance of atoms is fixed, and when the width of the atomic step is narrow, the atoms have a higher migration probability to the edge of the atomic step and be merged into the atomic step, so that an atomic step flow growth mode is formed. The InGaN quantum well 4 in the atomic step flow growth mode has higher internal quantum efficiency through temperature-variable PL test.
Fig. 5(a) is an AFM profile of an InGaN quantum well 4 formed on a GaN substrate with a miscut angle of 0.2 °. Fig. 5(b) is an AFM profile of InGaN quantum wells formed on a GaN substrate with a miscut angle of 0.54 °. Fig. 5(c) is an AFM profile of InGaN quantum wells formed on a GaN substrate with a miscut angle of 0.6 °.
It should be noted that green InGaN quantum wells were used in this test. From the AFM shape test results of fig. 5(a) to fig. 5(c), it can be known that the surface shape of the green InGaN quantum well 4 grown on the substrate 1 with a small oblique angle is a two-dimensional island shape distributed along the atomic steps, and the atomic step width is large. The surface morphology of the green InGaN quantum well 4 grown on the substrate 1 with a large off-angle is an atomic step flow morphology, and the atomic step width is small.
Fig. 6(a) is a graph of temperature-shifted PL test results for InGaN quantum wells formed on a GaN substrate with a miscut angle of 0.2 °. Fig. 6(b) is a graph of temperature-shifted PL test results for green InGaN quantum wells formed on a GaN substrate with a miscut angle of 0.56 °. Where the abscissa represents the value of 1000 divided by temperature and the ordinate represents the PL integrated intensity.
As can be seen from a combination of fig. 6(a) and 6(b), when the off-angle is increased from 0.2 ° to 0.56 °, the Internal Quantum Efficiency (IQE) of the green InGaN quantum well 4 is increased from 0.67% to 3.5%. Therefore, the substrate 1 with the inclined angle larger than 0.2 DEG is adopted to grow the green InGaN quantum well 4, so that the internal quantum efficiency of the green InGaN quantum well 4 can be effectively improved.
In summary, according to the embodiments of the present invention, the substrate with the chamfer angle larger than 0.2 ° is used to grow the green light or longer wavelength InGaN quantum well active region, so that the atomic step flow growth of the green light or longer wavelength InGaN quantum well can be realized, the morphology thereof can be improved, and the internal quantum efficiency of the InGaN quantum well can be improved. In addition, the InGaN quantum well prepared by the method can be widely applied to GaN-based green light or longer-wavelength LEDs and GaN-based green light or longer-wavelength lasers, and can also be widely applied to multi-quantum well solar cells.
While the invention has been shown and described with reference to certain embodiments, those skilled in the art will understand that: various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims and their equivalents.

Claims (10)

1. A method for increasing the luminous efficiency of a green or longer wavelength InGaN quantum well, comprising:
adopting a substrate with atomic steps, wherein the chamfer angle formed by adjacent atomic steps on the substrate is 0.2-0.7 degrees;
forming a buffer layer on the atomic step surface;
forming a high-temperature n-type GaN layer on the buffer layer;
forming an InGaN quantum well on the high-temperature n-type GaN layer;
wherein the light emitting wavelength of the InGaN quantum well is not less than 520nm, the In component of the InGaN quantum well is not less than 25%, and the growth method for forming the InGaN quantum well on the high-temperature n-type GaN layer is MOCVD.
2. The method of improving the luminous efficiency of a green or longer wavelength InGaN quantum well of claim 1 wherein the off-angle angles formed by each two adjacent atomic steps are equal.
3. The method of claim 1, wherein the buffer layer is a low temperature undoped GaN layer having a thickness of 10nm to 30 nm.
4. The method of improving the luminous efficiency of green or longer wavelength InGaN quantum wells of claim 1, wherein the thickness of the high temperature n-type GaN layer is less than 5000 nm.
5. The method of claim 1, wherein the electron concentration of the high temperature n-type GaN layer is 1017cm-3To 1019cm-3In the meantime.
6. The method of claim 1 for increasing the luminous efficiency of a green or longer wavelength InGaN quantum well, wherein the InGaN quantum well is undoped InxGa1-xAnd an N quantum well.
7. The method of claim 6, wherein the In is In the quantum well with enhanced light emission efficiencyxGa1-xThe thickness of the N quantum well is 1 nm-5 nm, and the InxGa1-xThe In composition of the N quantum well increases with increasing emission wavelength of the InGaN quantum well.
8. The method of improving the light emission efficiency of a green or longer wavelength InGaN quantum well as claimed in any of claims 1 to 7 wherein the InGaN quantum wells formed on each step of atoms are in a step-flow morphology.
9. A method for improving the luminous efficiency of a green or longer wavelength InGaN quantum well, as claimed in any of claims 1 to 7, wherein the height of the InGaN quantum well is equal to the height of the adjacent higher atomic step.
10. A structure for improving the luminous efficiency of green or longer wavelength InGaN quantum wells using the method of any of claims 1 to 9, comprising:
a substrate having atomic steps, and a chamfer angle formed by adjacent atomic steps is greater than 0.2 °;
a buffer layer formed on the atomic step surface;
a high temperature n-type GaN layer formed on the buffer layer;
and the InGaN quantum well is formed on the high-temperature n-type GaN layer.
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CN103903966A (en) * 2014-03-11 2014-07-02 复旦大学 Method for manufacturing ultrahigh-density germanium silicon quantum dots based on obliquely-cut silicon substrate
CN104538524A (en) * 2014-12-17 2015-04-22 中国科学院半导体研究所 Epitaxy structure of InGaN quantum dot and growth method

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